CN102738703A - Vertical resonant cavity surface emitting laser and manufacturing method thereof - Google Patents
Vertical resonant cavity surface emitting laser and manufacturing method thereof Download PDFInfo
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- CN102738703A CN102738703A CN2011100847141A CN201110084714A CN102738703A CN 102738703 A CN102738703 A CN 102738703A CN 2011100847141 A CN2011100847141 A CN 2011100847141A CN 201110084714 A CN201110084714 A CN 201110084714A CN 102738703 A CN102738703 A CN 102738703A
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- epitaxial stack
- emitting laser
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 42
- 239000011701 zinc Substances 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 41
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000003647 oxidation Effects 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000003475 lamination Methods 0.000 abstract description 27
- 150000002500 ions Chemical class 0.000 description 32
- 239000004575 stone Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 8
- 150000003751 zinc Chemical class 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 229960001296 zinc oxide Drugs 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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Abstract
The invention provides a vertical resonant cavity surface emitting laser and a manufacturing method thereof. The epitaxial lamination is formed on the substrate and comprises an annular zinc diffusion area, an annular ion implantation area positioned below the zinc diffusion area, an annular oxidation area positioned below the ion implantation area and an active area positioned below the annular oxidation area, wherein the zinc diffusion area is provided with a zinc diffusion through hole, the ion implantation area is provided with an ion implantation through hole, the oxidation area is provided with an oxidation through hole, and the zinc diffusion through hole, the ion implantation through hole and the oxidation through hole are communicated with each other. In addition, the invention also provides a manufacturing method of the vertical resonant cavity surface emitting laser.
Description
Technical field
The present invention relates to a kind of laser diode, relate in particular to a kind of vcsel and preparation method thereof.
Background technology
The principal character of vcsel (VCSEL) is can be haply to emit beam with the mode of vertical its chip upper surface.VCSEL can form the of heap of stone brilliant lamination with sandwich construction through chemical vapour deposition (CVD) (MOCVD) or molecular beam epitaxy deposition processs such as (MBE) usually, and makes through common semiconductor technology.
Brilliant lamination of heap of stone comprises one and is the active region of main luminous zone (active region), and two lay respectively at the both sides up and down of this active region Bragg mirror (DBR) stack layer.Constitute a laser resonator between this two Bragg mirrors stack layer, the light that can supply active region to produce specific wavelength comes back reflective to produce gain (gain) amplification within it.In order to obtain preferable photoelectric characteristic; Usually can in the Bragg mirror stack layer of upside, form electric current limitation through hole (current confinement aperture); In order to restriction flow of current path, use and reduce critical current and promote photoelectric conversion efficiency.
The method of traditional fabrication electric current limitation through hole comprises methods such as ion implantation and selective oxidation method, and these two kinds of methods respectively have it that pluses and minuses are arranged.As shown in Figure 1, a kind of known VCSEL selects to adopt this two kinds of methods simultaneously, not only has implanting ions limitation district 11 in the of heap of stone brilliant lamination 10 of this VCSEL, also has an oxidation limitation district 12 below implanting ions limitation district 11.Both have a limitation through hole 110,120 respectively implanting ions limitation district 11 and oxidation limitation district 12, and two limitation through holes 110,120 must aim in vertical direction, so that obtain preferable electric current limitation characteristic and have preferable spectral characteristic.
Yet,, also can derive the unsettled phenomenon of high impedance and mode, the operation of unfavorable high speed element though above-mentioned design can reduce high order mode.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of vcsel and preparation method thereof, stable few mode laser beam and low-impedance vcsel can be provided.
For reaching above-mentioned purpose, vcsel of the present invention comprises a substrate and a brilliant lamination of heap of stone.Brilliant lamination of heap of stone is formed on this substrate; And include the ring-type zoneofoxidation that ring-type implanting ions district, that a ring-type zinc diffusion region, is positioned at below, this zinc diffusion region is positioned at below, implanting ions district, and one be positioned at this ring-type zoneofoxidation below active region, wherein; This zinc diffusion region has zinc diffusion through hole; This implanting ions district has an implanting ions through hole, and this zoneofoxidation has an oxidation through hole, and this zinc diffusion through hole, this implanting ions through hole and this oxidation through hole are interconnected.
And the manufacture method of the vcsel of the invention described above comprises the following step: a substrate at first is provided; On this substrate, form a brilliant lamination of heap of stone; On this brilliant lamination of heap of stone, form one first shielding, this first shielding has a ring-type hole; Through this ring-type hole this brilliant lamination of heap of stone is carried out implanting ions, to form a ring-type implanting ions district; Through this ring-type hole this brilliant lamination of heap of stone is carried out the zinc diffusion, to form a ring-type zinc diffusion region; In this first shielding, form a secondary shielding, use the ring-type hole that covers this first shielding; And through this first shielding and this secondary shielding this is built brilliant lamination and carry out etching, to form an island platform.
In addition, the manufacture method of another kind of vcsel of the present invention comprises the following step: a substrate is provided; On this substrate, form a brilliant lamination of heap of stone, and should include a high aluminium content layer by brilliant lamination of heap of stone; On this brilliant lamination of heap of stone, form one first shielding, this first shielding has a ring-type hole; Through this ring-type hole this brilliant lamination of heap of stone is carried out the zinc diffusion, to form a ring-type zinc diffusion region; In this first shielding, form a secondary shielding, use the ring-type hole that covers this first shielding; Through this first shielding and this secondary shielding this brilliant lamination of heap of stone is carried out etching, to form an island platform; And this high aluminium content layer carried out oxidation to form a ring-type zoneofoxidation.
Effect of the present invention is, is borrowing the zinc diffusion that is interconnected with this implanting ions through hole and this oxidation through hole through hole, and vcsel of the present invention is done mode control, can make the mode of its laser of sending out stable, and reduces the existence of high order mode.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Fig. 1 is existing vcsel;
Fig. 2 A is the schematic side view of vcsel of the present invention;
Fig. 2 B is the schematic side view of vcsel of the present invention; And
Fig. 3 to Figure 14 is each step sketch map of the manufacture method of vcsel of the present invention.
Wherein, Reference numeral
First Bragg mirror, 221 first separate layers 222
225 first shieldings 23 of second Bragg mirror
Rounded portions 231 annulus portions 232
Ring-type hole 233 ring-type implanting ions districts 24
Implanting ions through hole 241 secondary shieldings 25
Island platform 26 sides 261
First electrode, 28 second electrodes 29
Zinc-oxide film 30 cover layers 31
Embodiment
Relevant technology contents of the present invention, detailed description, and effect, existing conjunction with figs. is explained as follows:.
Shown in Fig. 2 A, a kind of vcsel of the present invention mainly comprises a substrate 21, and is formed at the brilliant lamination 22 of heap of stone of one on this substrate 21.Should brilliant lamination 22 of heap of stone can the AlGaAs/GaAs system compound semiconductor be the basis, but do not limit with this, also can be material systems such as AlN/GaN/InGaN during actual enforcement, and can comply with required Wavelength of Laser and decide.Its wavelength is not limit, and can be infrared light, visible light or ultraviolet light etc.Specify its structure, this brilliant lamination 22 of heap of stone from bottom to top comprises one first Bragg mirror 221 that is formed on this substrate 21, one first separate layer 222, an active layers 223, one second separate layer 224 in regular turn, and one second Bragg mirror 225.The storehouse rete that this first Bragg mirror 221 and second Bragg mirror 225 have multilayer is respectively used reflection ray.This active layers 223 also can have the storehouse rete of multilayer.And, have a high aluminium content layer (figure does not show) in the storehouse rete of second Bragg mirror 225.
In addition, in this brilliant lamination 22 of heap of stone, also include a ring-type zinc diffusion region 32, and be positioned at the ring-type implanting ions district 24 below this zinc diffusion region 32, and one be positioned at 24 belows, implanting ions district ring-type zoneofoxidation 27.What pay special attention to is; This zinc diffusion region 32 has zinc diffusion through hole 321; This implanting ions district 24 has an implanting ions through hole 241, and this zoneofoxidation 27 has an oxidation through hole 271, and this zinc diffusion through hole 321, this implanting ions through hole 241 are interconnected with this oxidation through hole 271.
Borrow the zinc diffusion that is interconnected with this implanting ions through hole 241 and this oxidation through hole 271 through hole 321, vcsel of the present invention is being done mode control, can make the mode of its laser of sending out stable, and reducing the existence of high order mode.In addition, this zinc diffusion region 32 also can make this laser light field distribution present Gaussian distribution or round distributes, and, help to reduce the impedance of vcsel itself.Preferably, the axle center of this zinc diffusion through hole 321, when align with the axle center of this oxidation through hole 271 each other in the axle center of this implanting ions through hole 241, the effect that above-mentioned mode control and impedance are reduced reaches the best.In addition, the another kind of embodiment shown in Fig. 2 B, its structure is roughly identical with Fig. 2 A, and difference is above-mentioned second electrode is changed on the lower surface that is arranged on substrate 21, forms second electrode 33 shown in Fig. 2 B.
The manufacture method of vcsel of the present invention, at first as shown in Figure 3, a substrate 21 is provided, and on this substrate 21, forms a brilliant lamination 22 of heap of stone,
Then, on this brilliant lamination 22 of heap of stone, form one first shielding 23 with semiconductor technology.This first shielding 23 is that silicon nitride film is made via little shadow and etch process, and during actual enforcement, its material is not limit with this.As shown in Figure 4; This first shielding 23 is included in a rounded portions 231 that forms on this brilliant lamination 22 of heap of stone; And one around this rounded portions 231 and the annulus portion 232 concentric with this rounded portions 231, and defines a ring-type hole 233 between this rounded portions 231 and this annulus portion 232.
Then, as shown in Figure 5, should build brilliant lamination 22 through 233 pairs in the ring-type hole of this first shielding 23 and carry out implanting ions, in this second Bragg mirror 225, to form a ring-type implanting ions district 24.The implanting ions district 24 of this ring-type has an implanting ions through hole 241, the center of this first shielding 23 of the center-aligned of this implanting ions through hole 241.
Then; Should further carry out the zinc diffusion by brilliant lamination 22 of heap of stone through 233 pairs in this ring-type hole, as shown in Figure 6, at first; Form the zinc-oxide film 30 of this first shielding 23 of a covering and these implanting ions district 24 upper surfaces; Then, as shown in Figure 7, on this zinc-oxide film 30, further form a cover layer 31.Then, as shown in Figure 8, this zinc-oxide film 30 is heat-treated, make the zinc composition of zinc-oxide film 30 diffuse into this implanting ions district 24 downwards, to form a ring-type zinc diffusion region 32.And, as shown in Figure 9, the zinc-oxide film 30 and the cover layer 31 of these 32 tops, zinc diffusion region removed.
Then, shown in figure 10, utilize semiconductor technology in this first shielding 23, to form a secondary shielding 25, use the ring-type hole 233 that covers this first shielding 23.This secondary shielding 25 is that silicon nitride film is made via little shadow and etch process, and during actual enforcement, its material is not limit with this.Shown in figure 11, this secondary shielding 25 is circular, and it can cooperate the ring-type hole 233 that covers this first shielding 23, to protect the subregion of second Bragg mirror 225, i.e. and 25 region covered of secondary shielding.On actual fabrication, note that the edge that will make this secondary shielding 25 fully drops in this first shielding, annulus portion 232 of 23, completely containing this rounded portions 231 and this ring-type hole 233 at least, and can not exceed outside this annulus portion 232.
The width W of annulus portion 232 is minimum overlay errors of considering that employed semiconductor manufacturing equipment can reach.Shown in figure 12; When the overlay error of semiconductor manufacturing equipment causes the center of secondary shielding 25 can't align with the center of this first shielding 23; The edge of this secondary shielding 25 still can fully drop in the annulus portion 232 of this first shielding 23; That is to say,, absorb the overlay error of semiconductor manufacturing equipment through controlling the width W of this annulus portion 232.Therefore, if when the minimum overlay error of actual employed semiconductor manufacturing equipment is big, can consider to widen the width W of this annulus portion 232, so that the edge of this secondary shielding 25 drops in the annulus portion 232 of this first shielding 23.
Then, shown in figure 13, should carry out etching by brilliant lamination 22 of heap of stone through this first shielding 23 and 25 pairs of secondary shieldings, and be etched down to this first Bragg mirror 221, to form an island platform 26.Because the edge of this secondary shielding 25 fully drops in the annulus portion 232 of this first shielding 23; So the edge of the island platform 26 that etching is come out really is to be controlled by the edge of annulus portion 232; That is to say that the justified margin of island platform 26 is in this first shielding, edge of 23, and; The center of island platform 26 has been aligned in the center of this first shielding 23, the center of this implanting ions through hole 241 that also more aligns in fact.
Then, shown in figure 14, the high aluminium content layer of this second Bragg mirror 225 is carried out oxidation, forming a ring-type zoneofoxidation 27 between this implanting ions district 24 and this active region 223, and this zoneofoxidation 27 has an oxidation through hole 271.Because oxidation is inwardly to be carried out equably by the side 261 of island platform 26, therefore the center of formed oxidation through hole 271 can be aligned in the center of island platform 26, the center of this implanting ions through hole 241 that also aligns.By this, can reduce element light field limitation (indexguiding) effect of zoneofoxidation 27, and concentrated electric current raising electric current limitation (gain guiding) effect, to improve spectral characteristic.
At last, remove this first shielding 23 and this secondary shielding 25.And, shown in Fig. 2 A, utilize deposit metal films technology, on this second Bragg mirror 225, form one first electrode 28, and on this first Bragg mirror 221, form one second electrode 29.Perhaps, also can shown in Fig. 2 B, make second electrode 33 at the lower surface of substrate 21.So, promptly accomplish the making of vcsel of the present invention.
What need explanation is; More than the manufacture method of vcsel of the present invention; Formed implanting ions district 24, zinc diffusion region 32 and zoneofoxidation 27 threes, yet, during actual enforcement; Also can only carry out implanting ions district 24, zinc diffusion region 32 the two, or zinc diffusion region 32 and zoneofoxidation 27 the two.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (14)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110084714.1A CN102738703B (en) | 2011-04-01 | 2011-04-01 | Vertical resonant cavity surface emitting laser and manufacturing method thereof |
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| CN102738703A true CN102738703A (en) | 2012-10-17 |
| CN102738703B CN102738703B (en) | 2014-04-16 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108736315A (en) * | 2017-04-13 | 2018-11-02 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure and manufacturing method thereof |
| CN111446620A (en) * | 2020-06-17 | 2020-07-24 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser based on ion implantation, array and manufacturing method |
| TWI887541B (en) * | 2021-04-19 | 2025-06-21 | 大陸商深圳市嘉敏利光電有限公司 | Manufacturing method of high frequency VCSEL |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395344A (en) * | 2001-07-03 | 2003-02-05 | 扎尔林克半导体有限公司 | VCSELS for controlling polarization using asymmetric light limiting hole |
| US20030123502A1 (en) * | 2001-12-28 | 2003-07-03 | Biard James R. | Gain guide implant in oxide vertical cavity surface emitting laser |
| CN2571034Y (en) * | 2001-08-09 | 2003-09-03 | 杨英杰 | Semiconductor laser element structure |
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2011
- 2011-04-01 CN CN201110084714.1A patent/CN102738703B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395344A (en) * | 2001-07-03 | 2003-02-05 | 扎尔林克半导体有限公司 | VCSELS for controlling polarization using asymmetric light limiting hole |
| CN2571034Y (en) * | 2001-08-09 | 2003-09-03 | 杨英杰 | Semiconductor laser element structure |
| US20030123502A1 (en) * | 2001-12-28 | 2003-07-03 | Biard James R. | Gain guide implant in oxide vertical cavity surface emitting laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108736315A (en) * | 2017-04-13 | 2018-11-02 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure and manufacturing method thereof |
| CN111446620A (en) * | 2020-06-17 | 2020-07-24 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser based on ion implantation, array and manufacturing method |
| TWI887541B (en) * | 2021-04-19 | 2025-06-21 | 大陸商深圳市嘉敏利光電有限公司 | Manufacturing method of high frequency VCSEL |
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| CN102738703B (en) | 2014-04-16 |
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