CN102738079B - Polysilicon laser annealing device and polysilicon laser annealing method thereof - Google Patents
Polysilicon laser annealing device and polysilicon laser annealing method thereof Download PDFInfo
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- CN102738079B CN102738079B CN201210223212.7A CN201210223212A CN102738079B CN 102738079 B CN102738079 B CN 102738079B CN 201210223212 A CN201210223212 A CN 201210223212A CN 102738079 B CN102738079 B CN 102738079B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 36
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 27
- 238000005224 laser annealing Methods 0.000 title claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims description 12
- 230000008025 crystallization Effects 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000001678 irradiating effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
The invention relates to a polysilicon laser annealing device and a polysilicon laser annealing method thereof, wherein in the polysilicon laser annealing device, a shutter is arranged between a pulse laser beam generator and an amorphous silicon substrate in a direction in parallel with the amorphous silicon substrate; the shutter is provided with a width no less than that of a laser beam; in addition, the shutter is provided with a plurality of shelter areas not for laser to penetrate through and a plurality of through areas for the laser to penetrate through along the width direction of the laser beam; the shelter areas and the through areas are arranged in lines in the length direction of the laser beam; the sum of the lengths of all shelter areas in the same line in the width direction of the laser beams is equal, so that the laser beam which is excited every time is not radiated on the position of the same line on the amorphous silicon substrate, linear non-uniformity is changed into point non-uniformity so that naked eyes cannot distinguish by sheltering, and the technical problem of the prior art that display is not uniform due to the radiation produced because the energy of the laser beam is different at each time is solved.
Description
Technical field
The present invention relates to drive circuit technology organic light emitting display array base palte and manufacture field, specifically a kind of polysilicon laser anneal device and method thereof.
Background technology
Organic light emitting display (OLED) is active illuminating device.Compare present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD), OLED has high-contrast, wide viewing angle, low-power consumption, the advantages such as volume is thinner, being expected to the flat panel display of future generation become after LCD, is one of the maximum technology that receives publicity in current flat panel display.
In general assembly, all need deploy switch with the running of driven unit, with regard to display module, the configuration of these switches can be divided into active matrix and the large type of passive matrix type two, configuration mode due to active matrix has can the advantage such as continuous luminous and low voltage drive, so this kind of configuration mode is applied in display module significantly in recent years.In the display module of active matrix, its switch can be thin-film transistor (thin film transistor, be called for short TFT) or thin film diode etc., wherein, thin-film transistor is divided into amorphous silicon (amorphous si1icon according to the material of channel region, be called for short a-Si) thin-film transistor and polysilicon (poly-si1ocon) thin-film transistor, because polycrystalline SiTFT and electron mobility little relative to its consumed power of amorphous silicon film transistor is large, be therefore subject to the attention in market gradually.
The process temperatures of early stage polycrystalline SiTFT is up to 1000 degree Celsius, and therefore the selection of substrate material is restricted; But, recently due to the development of laser, process temperatures can be down to less than 600 degree Celsius, utilizes the polycrystalline SiTFT of this kind of processing procedure mode gained to be otherwise known as low temperature polycrystalline silicon (lowtemperature poly-si1icon, referred to as LTPS) thin-film transistor.The method of quasi-molecule laser annealing (excimer laser annealing is called for short ELA) is mostly adopted to carry out crystallization at present.
Laser crystallization inspires pulse laser beam by excimer laser, and laser beam arrives on amorphous silicon substrate through regulating, and amorphous silicon film absorbing laser energy, reaches the high temperature melting of 1700 DEG C instantaneously, in cooling procedure, then re-starts crystallization be called polysilicon.During laser crystallization, beam width is approximately 400 μm, and laser beam maintains static, and substrate at the uniform velocity moves.Laser energy is larger, the particle diameter of the crystal of the polysilicon obtained after laser crystallization is larger, different and the Energy distribution of laser beam itself uneven due to the laser energy be inspired at every turn, the grain size therefore formed is also different, and the polysilicon formed exists problem of non-uniform.Even if use overlapping irradiation, also cannot by this uneven elimination.Like this uneven is called as the inequality of irradiating and causing respectively and scans the inequality caused.
Chinese patent literature CN100495204C discloses a kind of technique light shield utilizing continous way lateral solidification method to carry out low temperature polysilicon process, this technique light shield comprises a complete transparent area, one complete shading district and a part of transparent area, wherein completely transparent area surround by complete shading district, and partial light permeability district is distributed among complete transparent area, in order to change the laser energy density distribution of complete transparent area, and amorphous material is transferred to polycrystalline series material, laser annealing is utilized to form the method for polycrystalline films, to form the polycrystalline films with the grain boundary of discontinuous straight line.Above-mentioned patent documentation is by using light shield Grain Boundaries, and to make there is crystal boundary in each TFT raceway groove, avoiding crystal boundary proper alignment to become a line to drop on quantity in TFT raceway groove may the electric property difference that causes of difference.Technique light shield in above-mentioned patent documentation uses when being only limited to continous way lateral solidification method, and in this continous way lateral solidification method, die locations is fixed, and does not have the problem of irradiating the inequality caused.The transmission region of the technique light shield in above-mentioned patent documentation is less, and form the crystal grain of one 15 microns between two transmission regions, the size of crystal grain own is larger.Therefore, in above-mentioned patent documentation, the design of technique light shield can only be applicable to the bending of single grain boundary on microcosmic, and then by controlling grain boundary sites control TFT electric property uniformity.And cannot in macroscopically (more than 40 microns ranks) control band grain size.If namely the light shield in above-mentioned patent is used for traditional E LA technique, then the single transmission region of its light shield cannot cover a TFT zone, has the transparent area of light shield in multiple above-mentioned patent in other words in a TFT zone.So macroscopically still can form the inequality that the irradiation of embarking on journey causes, the object eliminated and irradiate the inequality caused cannot be reached.
Summary of the invention
For this reason, to be solved by this invention is that existing technique light shield is only limited to the technical problem using when continous way lateral solidification method and cannot to be used in the inequality caused in the irradiation that macroscopically control band grain size is brought in ELA technology with bending single grain boundary, provides a kind of polysilicon laser anneal device and method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of polysilicon laser anneal device, comprising:
Pulse laser beam generator, sends pulse laser beam;
Amorphous silicon substrate, receives the pulse laser beam that described pulse laser beam generator sends, amorphous silicon melt instantaneously then re-start in cooling procedure crystallization formed polysilicon;
The shutter arranged with described amorphous silicon substrate-parallel between described pulse laser beam generator and described amorphous silicon substrate, the length of described shutter, width are greater than or equal to length, the width of described laser beam respectively, and described shutter passes through district along what the Width of described laser beam is provided with some shielded areas making laser not pass through and allows laser to pass through, different shielded area and by district's setting in column on the length direction of described laser beam, length on the Width of described laser beam of all shielded areas of same row and equal.
Described shielded area and the described area all at least being covered preparation TFT needs by district.
The length of the described shielded area of difference on the length direction of described laser beam on the Width of described laser beam and be greater than or equal to 60 μm, and be less than or equal to 180 μm.
Also comprise a shaking device, it is connected with described shutter, drives described shutter horizontal vibrating on the length direction of described laser beam.
The frequency range of described shaking device is between 5Hz-50Hz, and the amplitude range of described shaking device is 1mm-3mm; And the frequency of described shaking device or amplitude are in all after date change at random of several laser pulse once.
Prompting, provides a kind of polycrystalline silicon laser annealing method, comprises the steps:
1. shutter is set between pulse laser beam generator and amorphous silicon substrate with on the direction of described amorphous silicon substrate-parallel, described shutter length, width are greater than or equal to length, the width of described laser beam respectively, and described shutter passes through district along what the Width of described laser beam is provided with some shielded areas making laser not pass through and allows laser to pass through, different shielded area and by district's setting in column on the length direction of described laser beam, length on the Width of described laser beam of all shielded areas of same row and equal;
2. emission pulse laser bundle, controls described amorphous silicon substrate uniform motion on the direction perpendicular to described laser beam;
3. described amorphous silicon completes crystallization and generates polysilicon.
Described step 1. described in shielded area and the described area all at least being covered preparation TFT needs by district.
The length of the described shielded area of difference on the length direction of described laser beam on the Width of described laser beam and be greater than or equal to 60 μm, and be less than or equal to 180 μm.
Described step 2. in before emission pulse laser bundle, also comprise the step controlling described shutter and shake along the length direction of described laser beam with certain frequency and amplitude.
Described shutter vibration frequency scope 5Hz-50Hz, the amplitude range of described shaking device is 1mm-3mm; And the frequency of described shaking device or amplitude are in all after date change at random of several laser pulse once.
Technique scheme of the present invention has the following advantages compared to existing technology:
Polysilicon laser anneal device of the present invention, by arranging a shutter between pulse laser beam generator and amorphous silicon substrate with on the direction of amorphous silicon substrate-parallel, the length of this shutter, width is greater than or equal to the length of laser beam respectively, width, and shutter passes through district along what the Width of laser beam is provided with some shielded areas making laser not pass through and allows laser to pass through, different shielded area and by district's setting in column on the length direction of laser beam, length on the Width of laser beam of all shielded areas of same row and equal, ensure that regional has identical irradiation number of times under identical sweep span, ensure the uniformity of crystallization, the laser beam inspired each time is made no longer to be radiated on the position of the same line on amorphous silicon substrate, make to irradiate the inequality caused be formed in different TFT capable on, uneven by the uneven point cannot differentiated for naked eyes of blocking line, solve the technical problem of the inequality that the irradiation that brings due to each laser beam energy difference in prior art causes.
Described shielded area and the described area all at least being covered preparation TFT needs by district, can ensure this TFT zone and what receive with other TFT zone that a line is adjacent is not homogeneous laser pulse like this, the TFT electrology characteristic difference of preparing is slightly large in allowed band, change line and be not a uneven successful, the inequality of irradiating and causing can be eliminated better.
The length of different shielded areas on the Width of laser beam on the length direction of restriction laser beam and between 60 microns and 180 microns, effectively can eliminate the inequality of irradiating and causing, reduce again the energy of laser loss as far as possible.
By the horizontal microseismic activity of shutter on laser beam length direction, the inequality of irradiating and causing better can be eliminated.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the poly-silicon annealing apparatus structure schematic diagram of one embodiment of the invention;
Fig. 2 is the structural representation of the shutter of one embodiment of the invention;
Fig. 3 is the structural representation of the shutter of another embodiment of the present invention;
Wherein, Reference numeral is: 1-amorphous silicon substrate, 2-pulse laser beam, 3-shutter.
Embodiment
Shown in Figure 1, as the poly-silicon annealing device of one embodiment of the invention, comprise excimer laser, send pulse laser beam 2, the direction vertical with described radiating laser beams direction is provided with amorphous silicon substrate 1, and described amorphous silicon substrate 1 comprises the amorphous silicon layer, silicon dioxide resilient coating and the glass substrate that arrange in turn, for receiving the pulse laser beam 2 that described excimer laser sends, the amorphous silicon absorbing laser energy on described amorphous silicon substrate 1 melts instantaneously, in cooling procedure, then re-starts crystallization form polysilicon, shutter 3 is fixedly connected with at the laser exit place of described excimer laser, described shutter 3 be arranged in parallel with described amorphous silicon substrate 1, as the shutter 3 of one embodiment of the invention, its concrete structure is shown in Figure 2, for ensureing that described shutter 3 can block whole described laser beam, the length of described baffle plate 3, width are greater than or equal to length, the width of described laser beam respectively, in the present embodiment, described shutter 3 has the length identical with described laser beam and width, and wherein Width is shown in that, in figure shown in the direction of arrow, length direction is vertical with Width, and laser beam length described in the present embodiment is 280mm, width is 0.4mm, correspondingly the length of described shutter 3 for 280mm, width for 0.4mm, and described shutter 3 passes through district along what the Width of described laser beam is evenly provided with some rectangle shielded areas making laser not pass through and allows laser to pass through, shielded area and by district's setting in column on the length direction of laser beam, wherein, described shielded area is see in Fig. 2 shown in dash area, the length of complete described shielded area on described beam width direction and width are 60 μm, and then the length of all shielded areas of same row on the Width of described laser beam and be 60 μm, described like this shutter 3 makes the laser beam inspired each time no longer be radiated on the position of the same line on amorphous silicon substrate 1, uneven by the uneven point cannot differentiated for naked eyes of blocking line, the technical problem of the inequality that the irradiation brought due to each laser beam energy difference in solution prior art causes.
Wherein, the setting position of described shutter 3 can be selected arbitrarily as required, as long as be arranged on the passage of laser beam by shutter 3, be namely arranged between described excimer laser and described amorphous silicon substrate 1, can realize the object of blocking.
As the shutter 3 of another embodiment of the present invention, its structure is shown in Figure 3, and described shutter 3 has the length identical with described laser beam and width, length with 280mm, width for 0.4mm; And described shutter 3 passes through district along what the Width of described laser beam is provided with at random some rectangle shielded areas making laser not pass through and allows laser to pass through; different shielded area and by district's setting in column on the length direction of described laser beam; complete described shielded area on described beam width direction (namely in figure on direction shown in arrow) length at 60 μm to 180 μm not etc.; but the length of all shielded areas of same row on the Width of described laser beam and be 180 μm, can realize protection scope of the present invention equally.Described shielded area is arranged more at random, and it is better that change line is not a uneven effect! So-called random: refer under the prerequisite of continuous more than 1mm shielded area does not appear in laser beam (i.e. length) direction, the distribution of shielded area does not present regularity as far as possible.
As other embodiments of the present invention, the length of the shielded area on different shutter on described beam width direction and can be different, mainly determines according to beam width and TFT design requirement.Shielded area is unsuitable excessive, if excessive, by large losses laser energy, affects output; Too small, effectively cannot eliminate the inequality of irradiating and causing.
As the shutter 3 of other embodiments of the invention; shielded area can be uniformly distributed also can uneven distribution; as long as the length of the different shielded areas on the length direction of described laser beam on the Width of described laser beam and equal; can ensure that regional has identical irradiation number of times under identical sweep span; ensure the uniformity of crystallization; object of the present invention can be realized, belong to protection scope of the present invention.
As the shutter 3 of other embodiments of the invention, its shielded area comprised and all at least covered the area of a preparation TFT by district, can ensure this TFT zone and what receive with other TFT zone that a line is adjacent is not homogeneous laser pulse like this, the TFT electrology characteristic difference of preparing is slightly large in allowed band, change line and be not a uneven successful, the inequality of irradiating and causing can be eliminated better.
As other embodiments of the poly-silicon annealing device of the above embodiment of the present invention, comprise excimer laser, send pulse laser beam 2, the direction vertical with described radiating laser beams direction is provided with amorphous silicon substrate 1, for receiving the pulse laser beam 2 that described excimer laser sends, amorphous silicon absorbing laser energy on described amorphous silicon substrate 1 melts instantaneously, in cooling procedure, then re-starts crystallization form polysilicon, shutter 3 is fixedly connected with at the laser exit place of described excimer laser, described shutter 3 be arranged in parallel with described amorphous silicon substrate 1, be connected with described shutter 3 and be also provided with a shaking device, be example when taking laser pulse frequency as 300Hz, described shaking device drives the Random Level vibrations in 10Hz-20Hz frequency range on the length direction of described laser beam of described shutter 3, and its vibration frequency changes once after several pulse periods, ensure there is several pulsed laser irradiation in the vibrations cycle, its amplitude range is 1.5mm-2.5mm, as the shutter 3 of one embodiment of the invention, described shutter 3 has the length identical with described laser beam and width, length is with 280mm, width is for 0.4mm, and described shutter 3 passes through district along what the Width of described laser beam is evenly provided with some rectangle shielded areas making laser not pass through and allows laser to pass through, the length of complete described shielded area on described beam width direction and width are 180 microns, and then the length of the described shielded area of difference on the length direction of described laser beam on the Width of described laser beam and be 180 microns, such shutter 3 makes the laser beam inspired each time no longer be radiated on the position of the same line on amorphous silicon substrate 1, uneven by the uneven point cannot differentiated for naked eyes of blocking line, the technical problem of the inequality that the irradiation brought due to each laser beam energy difference in solution prior art causes.In the present embodiment, when shutter 3 horizontal microseismic activity, the number of times generation minor alteration that the movement of shaded areas causes amorphous silicon to be irradiated, the minor fluctuations of exposure number of times can offset with the fluctuation of laser energy, concrete principle of cancellation is as follows: within the scope of normal process, exposure number of times is more, and crystal grain is larger, and after certain number of times, grain size is substantially constant; Exposure energy is higher, and crystal grain is larger.Such as when certain irradiation energy is higher, this penetrating region defines larger crystal grain, but due to exposure number of times less than other regions, the final grain size formed can be substantially identical with other regions.
Certain other forms as realizing the present invention's vibrations, described vibration frequency scope is 5Hz-50Hz, and the amplitude range of described vibrations is 1mm-3mm, all can realize object of the present invention, belong to protection scope of the present invention; Certainly, as a kind of replacement form realizing shaking, those skilled in the art realize by the shake of laser beam.
One as the poly-silicon annealing device of the above embodiment of the present invention is out of shape; described excimer laser can be replaced by pulse laser beam generator of the prior art; such as solid state laser replaces, and all can realize object of the present invention, belong to protection scope of the present invention.
As the poly-silicon annealing method of one embodiment of the invention, comprise the steps:
The direction that S01 is parallel with described amorphous silicon substrate 1 between excimer laser and amorphous silicon substrate 1 arranges shutter 3; described shutter 3 has the width being not less than described beam width; and described shutter 3 along the Width of described laser beam is provided with some shielded areas that laser is not passed through and allows laser to pass through by district, the length of the described shielded area of the difference on the length direction of described laser beam on the Width of described laser beam and equal;
S02 Emission Lasers bundle, controls described amorphous silicon substrate 1 uniform motion on the direction perpendicular to described laser beam;
Amorphous silicon described in S03 completes crystallization and generates polysilicon;
After completing crystallization, described amorphous silicon substrate becomes polycrystalline silicon substrate, can make TFT on polycrystalline silicon substrate according to normal LTPS technique.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (8)
1. a polysilicon laser anneal device, comprising:
Pulse laser beam generator, sends pulse laser beam;
Amorphous silicon substrate, receives the pulse laser beam that described pulse laser beam generator sends, amorphous silicon melt instantaneously then re-start in cooling procedure crystallization formed polysilicon;
It is characterized in that, also comprise:
The shutter arranged with described amorphous silicon substrate-parallel between described pulse laser beam generator and described amorphous silicon substrate, the length of described shutter, width are greater than or equal to length, the width of described laser beam respectively, and described shutter passes through district along what the Width of described laser beam is provided with some shielded areas making laser not pass through and allows laser to pass through, different shielded area and by district's setting in column on the length direction of described laser beam, length on the Width of described laser beam of all shielded areas of same row and equal;
A shaking device, it is connected with described shutter, drives described shutter horizontal vibrating on the length direction of described laser beam.
2. polysilicon laser anneal device according to claim 1, is characterized in that: described shielded area and the described area all at least being covered preparation TFT needs by district.
3. polysilicon laser anneal device according to claim 2, it is characterized in that: the length of the described shielded area of the difference on the length direction of described laser beam on the Width of described laser beam and be greater than or equal to 60 μm, and be less than or equal to 180 μm.
4., according to the arbitrary described polysilicon laser anneal device of claim 1-3, it is characterized in that: the frequency range of described shaking device is between 5Hz-50Hz, and the amplitude range of described shaking device is 1mm-3mm; And the frequency of described shaking device or amplitude are in all after date change at random of several laser pulse once.
5. use a polycrystalline silicon laser annealing method for described polysilicon laser anneal device realization as arbitrary in claim 1-4, it is characterized in that, comprise the steps:
1. shutter is set between pulse laser beam generator and amorphous silicon substrate with on the direction of described amorphous silicon substrate-parallel, described shutter length, width are greater than or equal to length, the width of described laser beam respectively, and described shutter passes through district along what the Width of described laser beam is provided with some shielded areas making laser not pass through and allows laser to pass through, different shielded area and by district's setting in column on the length direction of described laser beam, length on the Width of described laser beam of all shielded areas of same row and equal;
2. emission pulse laser bundle, controls described amorphous silicon substrate uniform motion on the direction perpendicular to described laser beam;
3. described amorphous silicon completes crystallization and generates polysilicon;
Described step 2. in before emission pulse laser bundle, also comprise the step controlling described shutter and shake along the length direction of described laser beam with certain frequency and amplitude.
6. polycrystalline silicon laser annealing method according to claim 5, is characterized in that: described step 1. described in shielded area and describedly all at least cover the area of preparation TFT needs by district.
7. polycrystalline silicon laser annealing method according to claim 6, it is characterized in that: the length of the described shielded area of the difference on the length direction of described laser beam on the Width of described laser beam and be greater than or equal to 60 μm, and be less than or equal to 180 μm.
8., according to the arbitrary described polycrystalline silicon laser annealing method of claim 5-7, it is characterized in that: described shutter vibration frequency scope 5Hz-50Hz, the amplitude range of described shaking device is 1mm-3mm; And the frequency of described shaking device or amplitude are in all after date change at random of several laser pulse once.
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