CN102725847B - Integrated detector, and detecting method thereof, optical module and optical network system - Google Patents

Abstract

The invention discloses an integrated detector and its detection method, an optical module, and an optical network system, and relates to the field of communication. It can be realized that the data recovery unit recovers the signal carried in the optical signal while the detection unit detects the strength of the converted electrical signal. The data signal on the circuit further reduces the complexity of the packaging process. An integrated detector, including a detection unit and a data recovery unit, wherein the detection unit is used to receive a first optical signal sent from an optical network unit, and after photoelectric conversion, detect the strength of the converted electrical signal Weak; the data recovery unit is used to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion.

Description

An integrated detector and its detection method, optical module, and optical network system

technical field

The invention relates to the communication field, in particular to an integrated detector and its detection method, an optical module and an optical network system.

Background technique

In recent years, passive optical network (Passive Optical Network, PON) technology has become more and more popular among operators in the field of fiber access (Fiber to the x, FTTx) by virtue of its point-to-multipoint network architecture and passive advantages. and the large-scale deployment of passive optical fiber networks is directly affected by the cost of optical modules. However, at present, two detectors need to be installed in the optical module to detect and convert the optical signal respectively, which makes the packaging process of the product more complicated, with more optical components and high cost.

Contents of the invention

Embodiments of the present invention provide an integrated detector and its detection method, an optical module, and an optical network system, which can realize that while the detection unit detects the strength of the converted electrical signal, the data recovery unit recovers the data carried on the optical signal. The data signal, further, reduces the complexity of the packaging process.

In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:

On the one hand, an embodiment of the present invention provides an integrated detector, including: a detection unit and a data recovery unit, wherein,

The detection unit is configured to receive the first optical signal sent from the optical network unit, and detect the intensity of the converted electrical signal after photoelectric conversion;

The data recovery unit is configured to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion.

On the one hand, an embodiment of the present invention provides a detection method for an integrated detector, the method comprising:

receiving the first optical signal sent from the optical network unit, and detecting the strength of the converted electrical signal after photoelectric conversion;

The second optical signal sent from the optical line terminal is received, and after photoelectric conversion, the data signal carried on the light is restored.

On the one hand, an embodiment of the present invention provides an optical module, including: a laser, a filter, and a first optical waveguide, the laser is connected to the filter through the first optical waveguide, and the optical module is characterized in that It also includes: an integrated detector and a second optical waveguide, the integrated detector is connected to the laser through the second optical waveguide; wherein,

The laser is used to generate a first optical signal, and send the first optical signal to the integrated detector through the first optical waveguide;

The filter is configured to receive a second optical signal sent by an optical line terminal, and send the second optical signal to the integrated detector;

The integrated detector is used to receive the first optical signal sent from the optical network unit, and detect the strength of the converted electrical signal after photoelectric conversion; and receive the second optical signal sent from the optical line terminal, After photoelectric conversion, the data signal carried on the light is restored.

On the one hand, an embodiment of the present invention provides an optical network system. The optical network system includes: an optical line terminal, an optical network unit, and an optical distribution network. The optical line terminal communicates with the optical network unit through the optical distribution network. The optical network unit includes any one of the above-mentioned integrated detectors.

An integrated detector and its detection method, an optical module, and an optical network system provided in an embodiment of the present invention are provided with a detection unit and a data recovery unit, wherein the detection unit can receive the first optical signal sent from the optical network unit, through After the photoelectric conversion, the strength of the converted electrical signal is detected, and the data recovery unit can receive the second optical signal sent from the optical line terminal, and after the photoelectric conversion, recover the data signal carried on the light, thereby realizing the detection While the unit detects the strength of the converted electrical signal, the data recovery unit recovers the data signal carried on the light, further reducing the complexity of the packaging process.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

Fig. 1 is the structural schematic diagram of the integrated detector of the embodiment of the present invention;

Fig. 2 is the flowchart of the manufacturing method of the integrated detector according to the embodiment of the present invention;

3 is a schematic flow chart of a detection method of an integrated detector according to an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of an optical module according to an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of an optical network system according to an embodiment of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

Embodiment one

An embodiment of the present invention provides an integrated detector 1, as shown in FIG. 1 , a detection unit 12 and a data recovery unit 13, wherein,

The detection unit 12 is configured to receive the first optical signal sent from the optical network unit, and detect the strength of the converted electrical signal after photoelectric conversion;

The data recovery unit 13 is configured to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion.

Further, the integrated detector 1 further includes: an electrical isolation layer 103 for isolating the electrical signal of the detection unit 12 from the electrical signal of the data recovery unit 13 .

Further, the incident direction of the first optical signal received by the detection unit 12 is opposite to the incident direction of the second optical signal received by the data recovery unit 13, and the incident direction of the first optical signal is the same as that of the second optical signal. The incident directions of the optical signals are all parallel to the electrical isolation layer 103, or the incident direction of the first optical signal received by the detection unit 12 is the same as the incident direction of the second optical signal received by the data recovery unit 12, and the Both the incident direction of the first optical signal and the incident direction of the second optical signal are parallel to the electrical isolation layer 103 .

Further, the integrated detector 1 further includes: a substrate 101 on which the detection unit 12 and the data recovery unit 13 are integrated, and the substrate 101 is a semi-insulating indium phosphide material.

Further, the detection unit 12 includes: a first mesa, a first metal electrode layer 109, a first sub-n-pole layer 104, and a first reflective surface 114, wherein,

The first mesa is formed by sequentially depositing the n-pole layer 102, the absorbing layer, and the p-pole layer on the substrate 101, and then etching the p-pole layer and the absorbing layer using a photolithography process, and the n-pole Layer 102 is an N-type doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the P pole layer is a P-type doped indium phosphide material;

The first metal electrode layer 109 is formed by corroding the metal layer by chemical etching after depositing the metal layer on the first mesa;

The first sub-n-pole layer 104 is formed by etching the n-pole layer 102 by wet etching;

The first reflective surface 114 is formed by etching the first sub-n-pole layer 104 by wet etching;

The data recovery unit 13 includes: a second mesa, a second metal electrode layer 113, a second sub-n-pole layer 105, and a second reflective surface 115, wherein,

The second mesa is formed by sequentially depositing the n-pole layer 102, the absorption layer, and the p-pole layer on the substrate 101, and then etching the p-pole layer and the absorption layer by using a photolithography process, and The n-pole layer 102 is an N-type doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the p-pole layer is a P-type doped indium phosphide material;

The second metal electrode layer 113 is formed by corroding the metal layer by chemical etching after depositing the metal layer on the second mesa;

The second sub-n-pole layer 105 is formed by etching the n-pole layer 102 by wet etching;

The second reflective surface 115 is formed by etching the second sub-n-pole layer 105 by wet etching.

Further, the detection unit 12 further includes: a first light incident slope 116, the first light incident slope 116 is formed by etching the first sub-n-pole layer 104 using a wet etching method, so that The first optical signal enters the first sub-n-pole layer 104 from the first light incident slope 116;

The data recovery unit 13 further includes: a second light incident slope 117, the second light incident slope 117 is formed by etching the second sub-n-pole layer 105 using a wet etching method, the first Two optical signals enter the second sub-n-pole layer 105 from the second light incident slope 117 .

The integrated detector provided by the embodiment of the present invention is provided with a detection unit and a data recovery unit, wherein the detection unit can receive the first optical signal sent from the optical network unit, and after photoelectric conversion, detect the strength of the converted electrical signal , the data recovery unit can receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion, thereby realizing that while the detection unit detects the strength of the converted electrical signal, The data recovery unit recovers the data signal carried on the light, further reducing the complexity of the packaging process.

Embodiment two

The embodiment of the present invention provides an integrated detector 1. As shown in FIG. On the substrate 101 of indium chloride material, wherein,

Detection unit 12 includes:

The first sub-n-pole layer 104, the first sub-n-pole layer 104 may be an n-type doped indium phosphide material;

The first absorption layer 106 disposed on the first sub-n-pole layer 104, the first absorption layer 106 may be an indium gallium arsenide material;

The first electrode layer 107 arranged on the first absorption layer 106, the first electrode 107 may include a first P pole layer 108 and a first metal electrode layer 109, wherein the first P pole layer 108 may be P-type doped Indium phosphide material, the first metal electrode layer 109 may be a metal material;

the first reflective surface 114 provided in the first sub-n-pole layer 104;

The detection unit 12 composed of the first sub-n-pole layer 104, the first absorption layer 106, the first P-pole layer 108, the first metal electrode layer 109 and the first reflective surface 114 can receive signals from the laser in the active optical module. The emitted light is the first optical signal, and is in a reverse voltage state under the action of the first metal electrode layer 109, and the detection unit 12 makes the first optical signal passing through the first sub-n-pole layer 104 pass through the first reflection The reflection effect of the surface 114 is injected into the first absorbing layer 106 to detect the strength of the converted electrical signal. At this time, the detection unit 12 is equivalent to a separate monitoring detector;

Data recovery unit 13 includes:

The second sub-n-pole layer 105, the second sub-n-pole layer 105 may be an n-type doped indium phosphide material;

The second absorption layer 110 disposed on the second sub-n-pole layer 105, the first absorption layer 110 may be an indium gallium arsenide material;

The second electrode layer 111 arranged on the second absorption layer 110, the first electrode 111 may include a second P pole layer 112 and a second metal electrode layer 113, wherein the second P pole layer 112 may be P-type doped Indium phosphide material, the second metal electrode layer 113 may be a metal material;

the second reflective surface 115 provided in the second sub-n-pole layer 105;

The data recovery unit 13 composed of the second sub-n-pole layer 105, the second absorption layer 110, the second P-pole layer 112, the second metal electrode layer 113, and the second reflective surface 115 can filter through the active optical module. The device receives light from the optical fiber, that is, the second optical signal, and is in a reverse voltage state under the action of the second metal electrode layer 113, and the data recovery unit 117 makes the second optical signal passing through the second sub-n-pole layer 105, Through the reflection of the second reflective surface 115, it is injected into the second absorbing layer 110 to convert the optical signal into an electrical signal and recover the data signal carried on the light. At this time, the data recovery unit 13 is equivalent to a single photoelectric signal. detector.

Further, the integrated detector 1 also includes an electrical isolation layer 103, which can isolate the electrical signal of the detection unit 12 from the electrical signal of the data recovery unit 13, and the electrical isolation layer 103 can specifically be an organic polymer or air;

It should be noted that the first metal electrode layer 109 can be divided into a positive metal electrode 1091 and a negative metal electrode 1092, wherein the positive metal electrode 1091 is connected to a positive voltage and is in contact with the first sub-n-pole layer 104, and the negative metal electrode 1092 is connected to a negative voltage Alternatively, the ground is in contact with the first P pole layer 108, so that under the joint action of the positive metal electrode 1091 and the negative metal electrode 1092, the detection unit 12 is always in a reverse voltage state to detect the strength of the incident light signal. Similarly, the second metal electrode layer 113 can also be divided into a positive metal electrode 1131 and a negative metal electrode 1132, wherein the positive metal electrode 1131 is connected to a positive voltage to contact the second sub-n-pole layer 105, and the negative metal electrode 1132 is connected to a negative voltage to contact with the second sub-n-pole layer 105. The second P pole layer 112 is in contact, so that under the joint action of the positive metal electrode 1131 and the negative metal electrode 1132, the data recovery unit 13 is always in a reverse voltage state, so as to convert the incident optical signal into a current signal and restore the load carrying capacity. Data signal on light.

Exemplarily, the incident directions of the first optical signal and the second optical signal are opposite and the incident directions of the first optical signal and the second optical signal are parallel to the electrical isolation layer 103. In this way, the first optical signal and the second optical signal can be avoided Crosstalk occurs before and after entering the integrated detector 1 , and under the action of the electrical isolation layer 103 , electrical crosstalk between the first optical signal and the second optical signal after photoelectric conversion is also avoided.

The above description of the incident directions of the first optical signal and the second optical signal is only exemplary, and of course other incident methods can also be used, for example, the incident directions are the same and the incident directions of the first optical signal and the second optical signal are the same as those of the electrical signal. The isolation layer is parallel, or the incident direction is opposite and the incident direction of the first optical signal and the second optical signal is perpendicular to the electrical isolation layer, because it is to make the integrated detector detect the intensity of the converted electrical signal or restore the The above data signal, so the principle is the same and will not be repeated here, but it should also be within the protection scope of the present invention.

It can be seen from Figure 1 that the detection unit composed of the first sub-n-pole layer, the first absorption layer, the first P-pole layer, the first metal electrode layer and the first reflection surface can receive signals from the active optical module. The light emitted by the laser is the first optical signal. The first optical signal enters the first sub-n-pole layer and propagates in the first sub-n-pole layer. When the first optical signal reaches the first reflective surface, the first optical signal Under the action of the reflective surface, it will enter the first absorption layer. When the first optical signal enters the first absorption layer, the detection unit that has been in the reverse voltage state under the action of the first metal electrode layer can detect the first optical signal. The light intensity of the light signal, the detection unit at this time is equivalent to a single monitoring detector. Similarly, the data recovery unit composed of the second sub-n-pole layer, the second absorption layer, the second P-pole layer, the second metal electrode layer and the second reflective surface can receive data from the optical fiber through the filter in the active optical module. The light, that is, the second optical signal, the second optical signal enters the second sub-n-pole layer and propagates in the second sub-n-pole layer, when the second optical signal reaches the second reflective surface, the second optical signal Under the action of , it will be injected into the second absorbing layer. When the second optical signal enters the second absorption layer, the data recovery unit that has been in the reverse voltage state under the action of the second metal electrode layer can convert the incident optical signal into an electrical signal, and the data recovery unit at this time is equivalent to on a single photodetector.

Further, the embodiment of the present invention exemplifies the manufacturing method of the integrated detector 1, as shown in Figure 2, the manufacturing method is:

S201, sequentially depositing an n-pole layer, an absorption layer, and a p-pole layer on a substrate.

On the substrate of semi-insulating indium phosphide material, the n-pole layer of n-type doped indium phosphide material, the absorption layer of indium gallium arsenide material and the p-pole layer of p-type doped indium phosphide material are deposited in sequence .

S202. Using a photolithography process, etch the P pole layer and the absorption layer to form a first mesa and a second mesa, the first mesa includes the first absorption layer and the first P pole layer, and the second mesa includes the second absorption layer and the second mesa Two P pole layers.

The photolithography process can be used to etch the absorber layer and the P pole layer at one time to form the first mesa and the second mesa, the edges of the first mesa and the second mesa may not coincide with the edge of the n pole layer, and the first mesa and the second mesa There is a space between the second mesas. The first mesa includes a first absorption layer and a first P pole layer, and the second mesa includes a second absorption layer and a second P pole layer.

It should be pointed out that this is only a description of the manufacturing method of the first mesa and the second mesa, and does not limit the shapes of the first mesa and the second mesa. Of course, the first mesa and the second mesa can be circular, rectangular or Other irregular shapes are specifically determined by the shape of the crystal lattice, but they are all made by photolithography, so the manufacturing method is the same, and should also fall within the protection scope of the present invention.

S203 , depositing a metal layer on the n-pole layer, the first mesa, and the second mesa.

After the first mesa and the second mesa are etched by a photolithography process, a metal layer is deposited on the exposed n-pole layer and the first mesa and the second mesa.

S204. Using a chemical etching method, corroding the metal layer to form a first metal electrode layer and a second metal electrode layer.

It should be noted that the first metal electrode layer here can be divided into positive and negative metal electrodes. The positive metal electrode is connected to a positive voltage and is located on the n-electrode layer, and there is a gap between it and the first mesa. The negative metal electrode is connected to a negative voltage or The ground is located on the first mesa, that is, in contact with the first P pole layer. Similarly, the second metal electrode layer here can also be divided into positive and negative metal electrodes. The positive metal electrode is connected to the positive voltage and is located on the n-pole layer, and there is a gap between the second mesa, and the negative metal electrode is connected to the negative voltage or grounded. Located on the second mesa, that is, in contact with the second P pole layer.

S205. Using a wet etching method, etch the n-pole layer to form a first light-incident slope and a second light-incident slope, respectively.

The n-pole layer is etched by wet etching to form a first light-incident slope and a second light-incident slope. The specific position may be the edge of the n-pole layer. The same side of the n-pole layer can also be located on different sides of the n-pole layer. The first light incident slope and the second light incident slope can not only reduce the reflection of incident light, but also reduce the interference of reflected light on incident light. The first optical signal enters the n-pole layer from the first light-incident slope, and the second light signal enters the n-pole layer from the second light-incident slope.

S206. Using wet etching, etch the n-pole layer to form an electrical isolation layer, the electrical isolation layer separates the n-pole layer into a first sub-n-pole layer and a second sub-n-pole layer, and simultaneously etch the first sub-n-pole layer pole layer and the second sub-n-pole layer, so that the first reflective surface is formed in the first sub-n-pole layer, and the second reflective surface is formed in the second sub-n-pole layer.

First of all, it needs to be explained that after step S206 introduces the concept of the first sub-n-pole layer and the second sub-n-pole layer, the positions of the first light-incident slope and the second light-incident slope in step S205 become more clear, and step S205 wherein wet etching is used to form a first light incident slope and a second light incident slope, the first light incident slope and the second light incident slope are respectively located at the edges of the first sub-n-pole layer and the second sub-n-pole layer, that is The depths of the first light incident slope and the second light incident slope are equal to the thickness of the n-pole layer. But preferably, when performing wet etching, part of the substrate can be etched by prolonging the etching time. If the incident light scatters into the substrate before it is incident, the inclined surface located in the substrate can also play its reflective role. Reduce the reflection of incident light. Further, the first light-incident slope can be located on the edge of one side of the first mesa, the second light-incident slope can be located on the edge of one side of the second mesa, and the first light-incident slope and the second light-incline slope can be on the same side , can also be on different sides, so that the incident directions of the first optical signal and the second optical signal are opposite or the same and parallel to the electrical isolation layer, which can avoid optical crosstalk between the first optical signal and the second optical signal before they enter the integrated detector .

An electrical isolation layer is formed between the first mesa and the second mesa by wet etching, the electrical isolation layer separates the n-pole layer into a first sub-n-pole layer and a second sub-n-pole layer, and the first mesa, The first metal electrode layer is located on the first sub-n-pole layer, and the second mesa and the second metal electrode layer are located on the second sub-n-pole layer. The electrical isolation layer may be an air gap, or may specifically be an organic polymer, or other insulating materials that can be fabricated on a semiconductor.

At the same time, the first sub-n-pole layer is etched by wet etching, so that a first reflective surface is formed in the first sub-n-pole layer, and the first reflective surface is located between the first mesa and the electrical isolation layer, which can The light transmitted through the first sub-n-pole layer is reflected into the first absorption layer. Similarly, the second sub-n-pole layer is etched by wet etching, so that a second reflective surface is formed in the second sub-n-pole layer, and the second reflective surface is located between the second mesa and the electrical isolation layer, Light transmitted through the second sub-n-pole layer can be reflected into the second absorption layer.

It should be pointed out that the first reflective surface and the second reflective surface may be trapezoidal reflective surfaces, which are determined by the crystal orientation of the crystal lattice. One of the basic characteristics of crystals is that they have directionality, and the properties of crystals are different along different directions of the crystal lattice. For example, along a certain crystal orientation, semiconductor devices can be easily dissociated to form a clean and smooth fracture surface. Similarly, in some specific crystal orientations, the corrosion rate of the chemical etching liquid on the crystal is also completely different. As for the indium phosphide material, after wet etching, a left-right symmetrical trapezoid can be formed, and the slopes of the hypotenuses are the same. According to the crystal orientation characteristics of the semiconductor, just one wet etching method can be implemented to form the first reflective surface and the second reflective surface.

What needs to be added is that in step S206 wet etching is used to form the electrical isolation layer, the first reflective surface and the second reflective surface. The electrical isolation layer is in the n-pole layer, that is, the thickness of the electrical isolation layer is equal to the n-pole layer. A reflective surface and a second reflective surface are respectively in the first sub-n-pole layer and the second sub-n-pole layer, that is, the depths of the first reflective surface and the second reflective surface are equal to the thickness of the n-pole layer, that is, step S206 The electric isolation layer, the first reflective surface and the second reflective surface are formed by one-time etching by wet etching method. But preferably, when performing the etching of the first reflective surface and the second reflective surface, part of the substrate can be etched by prolonging the etching time. If the light transmitted in the n-pole layer scatters into the substrate, then the The reflective surface in the substrate can also play its reflective role to reflect light into the first absorbing layer or the second absorbing layer. At this time, the electrical isolation layer formed by etching, the first reflective surface and the second reflective surface can be divided into two parts. The first step is to first use wet etching to etch the n-pole layer to form an electrical isolation layer, and the electrical isolation layer separates the n-pole layer into a first sub-n-pole layer and a second sub-n-pole layer, and then use wet etching An etching method, etching the first sub-n-pole layer, the second sub-n-pole layer and part of the substrate to form the first reflective surface and the second reflective surface.

So far, the integrated detector of the embodiment of the present invention has been manufactured. It can be seen from the above-mentioned method of manufacturing the integrated detector that the detection unit 12 and the data recovery unit 13 in FIG. 1 have the same structure and are integrated on the same substrate 101, and The detection unit 12 and the data recovery unit 13 can be fabricated on the same substrate 101 at one time.

In order to illustrate the working principle of the integrated detector more clearly, it is illustrated as shown in FIG. 1 .

First, the working principle of the detection unit 12 is described. The first optical signal enters the first sub-n-pole layer from the first light-incident slope, and propagates in the first sub-n-pole layer. When the first optical signal reaches the first reflection When it is on the surface, it will be injected into the first absorbing layer under the action of the first reflective surface. Since the positive metal electrode of the detection unit is positively charged and connected to the first sub-n pole layer, and the negative metal electrode is negatively charged to connect with the first P pole layer, the detection unit is always in the state of reverse voltage. When there is one absorbing layer, the first absorbing layer can detect the light intensity of the first light signal.

Next, the working principle of the data recovery unit 13 is explained. The second optical signal enters the second sub-n-pole layer from the second light-incident slope, and propagates in the second sub-n-pole layer. When the second optical signal reaches the second When the reflective surface is used, it will be injected into the second absorbing layer under the action of the second reflective surface. Because the positive metal electrode of the data recovery unit is positively connected to the second sub-n pole layer, and the negative metal electrode is negatively charged to connect to the second P pole layer, so the data recovery unit is always in a reverse voltage state. When the second optical signal emits When entering the second absorbing layer, the second absorbing layer can convert the incident optical signal into an electrical signal to restore the data signal carried on the light.

The integrated detector provided by the embodiment of the present invention is provided with a detection unit, a data recovery unit, and an electrical isolation layer, wherein the electrical isolation layer can isolate the electrical signal of the detection unit from the electrical signal of the data recovery unit, and the detection unit can receive data from the The first optical signal sent by the optical network unit, after the photoelectric conversion, detects the strength of the converted electrical signal, and the data recovery unit can receive the second optical signal sent from the optical line terminal, and after the photoelectric conversion, restore the The data signal on the light, so that when the detection unit detects the strength of the converted electrical signal, the data recovery unit recovers the data signal carried on the light, and the electrical signal in the detection unit is consistent with the signal in the data recovery unit The electrical signal does not generate electrical crosstalk, which further reduces the complexity of the packaging process and improves the reliability of the detector.

Embodiment three

An embodiment of the present invention provides a detection method for an integrated detector, as shown in FIG. 3 , the method includes:

S301. The detection unit receives the first optical signal sent from the optical network unit, and after photoelectric conversion, detects the intensity of the converted electrical signal.

S302. The data recovery unit receives the second optical signal sent from the optical line terminal, and recovers the data signal carried on the light after photoelectric conversion.

The detection method of the integrated detector provided by the embodiment of the present invention can receive the first optical signal sent from the optical network unit, detect the intensity of the converted electrical signal after photoelectric conversion, and receive the first optical signal sent from the optical line terminal. The second optical signal is converted into a photoelectric signal to recover the data signal carried on the light. Further, the complexity of the packaging process is reduced.

Embodiment Four

An embodiment of the present invention provides an optical module. As shown in FIG. 4 , a laser 3, a filter 4 and a first optical waveguide 5, the optical module further includes: an integrated detector 1 and a second optical waveguide 2, and the integrated detector 1 passes through The second optical waveguide 2 is connected to the laser 3;

a laser 3, configured to generate a first optical signal, and send the first optical signal to the integrated detector 1 through the first optical waveguide 5;

A filter 4, configured to receive a second optical signal sent by an optical line terminal, and send the second optical signal to the integrated detector 1;

The integrated detector 1 is used to receive the first optical signal sent from the optical network unit, and after photoelectric conversion, detect the strength of the converted electrical signal; and receive the second optical signal sent from the optical line terminal, through After photoelectric conversion, the data signal carried on the light is restored.

Further, the integrated detector 1 specifically includes: a detection unit and a data recovery unit, wherein the detection unit is used to receive the first optical signal sent from the optical network unit, and detect the converted electrical signal after photoelectric conversion. The strength of the signal; the data recovery unit is used to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion.

Further, the integrated detector 1 further includes: an electrical isolation layer, used to isolate the electrical signal of the retrieval unit from the electrical signal of the data recovery unit.

Further, the detection unit includes: a first mesa, a first metal electrode layer, a first sub-n-pole layer, and a first reflective surface, wherein,

The first mesa is formed by sequentially depositing an n-pole layer, an absorber layer, and a p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the n-pole layer is N-type doped indium phosphide material, the absorber layer is indium gallium arsenide material, and the P pole layer is P-type doped indium phosphide material;

The first metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the first mesa;

The first sub-n-pole layer is formed by etching the n-pole layer by wet etching;

The first reflective surface is formed by etching the first sub-n-pole layer by wet etching.

Further, the detection unit further includes: a first light incident slope, the first light incident slope is formed by etching the first sub-n-pole layer by wet etching, and the first light incident slope A signal enters the first sub-n-pole layer from the first light incident slope.

An embodiment of the present invention provides an optical module. By setting an integrated detector, it can not only receive the first optical signal sent from the optical network unit, but also detect the intensity of the converted electrical signal after photoelectric conversion, and can receive The second optical signal sent from the optical line terminal, after photoelectric conversion, recovers the data signal carried on the light, and at the same time ensures that there is no crosstalk between the two incoming optical signals, further reducing the optical module packaging process. The complexity improves the reliability of the optical module.

Further, as shown in FIG. 5 , the embodiment of the present invention also provides an optical network system 400, including: an optical line terminal 410, an optical network unit 420, and an optical distribution network 430. The optical line terminal 410 distributes The network 430 is connected to the optical network unit 420, and the optical network unit 420 includes an integrated detector 440. The specific structure of the integrated detector 440 can refer to FIG. 1 and the structure of the integrated detector described in Embodiment 1.

The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (6)

1. An integrated detector, characterized in that, the integrated detector comprises: a detection unit and a data recovery unit, wherein, The detection unit is configured to receive the first optical signal sent from the optical network unit, and detect the intensity of the converted electrical signal after photoelectric conversion; The data recovery unit is configured to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion; The integrated detector also includes: an electrical isolation layer and a substrate, the electrical isolation layer is used to isolate the electrical signal of the detection unit from the electrical signal of the data recovery unit; the detection unit and the The data recovery units are all integrated on the substrate, and the substrate is semi-insulating indium phosphide material; The incident direction of the first optical signal received by the detection unit is opposite to the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident direction of the second optical signal are parallel to the electrical isolation layer, or the incident direction of the first optical signal received by the detection unit is the same as the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident directions of the second optical signal are parallel to the electrical isolation layer; The detection unit includes: a first mesa, a first metal electrode layer, a first sub-n-pole layer, and a first reflective surface, wherein, The first mesa is formed by sequentially depositing an n-pole layer, an absorber layer, and a p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the n-pole layer is N-type doped indium phosphide material, the absorber layer is indium gallium arsenide material, and the P pole layer is P-type doped indium phosphide material; The first metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the first mesa; The first sub-n-pole layer is formed by etching the n-pole layer by wet etching; The first reflective surface is formed by etching the first sub-n-pole layer by wet etching; The data recovery unit includes: a second mesa, a second metal electrode layer, a second sub-n-pole layer, and a second reflective surface, wherein, The second mesa is formed by sequentially depositing the n-pole layer, the absorber layer, and the p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the The n-pole layer is an N-type doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the p-pole layer is a P-type doped indium phosphide material; The second metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the second mesa; The second sub-n-pole layer is formed by etching the n-pole layer by wet etching; The second reflective surface is formed by etching the second sub-n-pole layer by wet etching. 2. The integrated detector according to claim 1, wherein the detection unit further comprises: a first light incident slope, and the first light incident slope uses a wet etching method to etch the first light incident surface. Formed by a sub-n-pole layer, the first optical signal enters the first sub-n-pole layer from the first light incident slope; The data recovery unit further includes: a second light incident slope, the second light incident slope is formed by etching the second sub-n-pole layer by wet etching, and the second optical signal is formed by The second light-incident slope enters the second sub-n-pole layer. 3. A detection method of an integrated detector, characterized in that the method comprises: The detection unit receives the first optical signal sent from the optical network unit, and after photoelectric conversion, detects the intensity of the converted electrical signal; The data recovery unit receives the second optical signal sent from the optical line terminal, and recovers the data signal carried on the light after photoelectric conversion; The electrical isolation layer isolates the electrical signal of the detection unit from the electrical signal of the data recovery unit; The incident direction of the first optical signal received by the detection unit is opposite to the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident direction of the second optical signal are parallel to the electrical isolation layer, or the incident direction of the first optical signal received by the detection unit is the same as the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident directions of the second optical signal are parallel to the electrical isolation layer; The detection unit includes: a first mesa, a first metal electrode layer, a first sub-n-pole layer, and a first reflective surface, wherein, The first mesa is formed by sequentially depositing an n-pole layer, an absorber layer, and a p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the n-pole layer is an n-type A doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the P pole layer is a P-type doped indium phosphide material; The first metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the first mesa; The first sub-n-pole layer is formed by etching the n-pole layer by wet etching; The first reflective surface is formed by etching the first sub-n-pole layer by wet etching; The data recovery unit includes: a second mesa, a second metal electrode layer, a second sub-n-pole layer, and a second reflective surface, wherein, The second mesa is formed by sequentially depositing the n-pole layer, the absorber layer, and the p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the The n-pole layer is an N-type doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the p-pole layer is a P-type doped indium phosphide material; The second metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the second mesa; The second sub-n-pole layer is formed by etching the n-pole layer by wet etching; The second reflective surface is formed by etching the second sub-n-pole layer by wet etching. 4. An optical module, comprising: a laser, a filter, and a first optical waveguide, the laser is connected to the filter through the first optical waveguide, wherein the optical module also includes: an integrated detector and a second optical waveguide, the integrated detector is connected to the laser through the second optical waveguide; wherein, The laser is used to generate a first optical signal, and send the first optical signal to the integrated detector through the first optical waveguide; The filter is configured to receive a second optical signal sent by an optical line terminal, and send the second optical signal to the integrated detector; The integrated detector is used to receive the first optical signal sent from the optical network unit, and detect the strength of the converted electrical signal after photoelectric conversion; and receive the second optical signal sent from the optical line terminal, After photoelectric conversion, the data signal carried on the light is restored; The integrated detector specifically includes: a detection unit and a data recovery unit, wherein, The detection unit is configured to receive the first optical signal sent from the optical network unit, and detect the intensity of the converted electrical signal after photoelectric conversion; The data recovery unit is configured to receive the second optical signal sent from the optical line terminal, and recover the data signal carried on the light after photoelectric conversion; The integrated detector also includes: an electrical isolation layer and a substrate, the electrical isolation layer is used to isolate the electrical signal of the retrieval unit from the electrical signal of the data recovery unit; the detection unit and the The data recovery units are all integrated on the substrate, and the substrate is semi-insulating indium phosphide material; The incident direction of the first optical signal received by the detection unit is opposite to the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident direction of the second optical signal are parallel to the electrical isolation layer, or the incident direction of the first optical signal received by the detection unit is the same as the incident direction of the second optical signal received by the data recovery unit, and the incident direction of the first optical signal and the incident directions of the second optical signal are parallel to the electrical isolation layer; The detection unit includes: a first mesa, a first metal electrode layer, a first sub-n-pole layer, and a first reflective surface, wherein, The first mesa is formed by sequentially depositing an n-pole layer, an absorber layer, and a p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the n-pole layer is N-type doped indium phosphide material, the absorber layer is indium gallium arsenide material, and the P pole layer is P-type doped indium phosphide material; The first metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the first mesa; The first sub-n-pole layer is formed by etching the n-pole layer by wet etching; The first reflective surface is formed by etching the first sub-n-pole layer by wet etching; The data recovery unit includes: a second mesa, a second metal electrode layer, a second sub-n-pole layer, and a second reflective surface, wherein, The second mesa is formed by sequentially depositing the n-pole layer, the absorber layer, and the p-pole layer on the substrate, and then etching the p-pole layer and the absorber layer using a photolithography process, and the The n-pole layer is an N-type doped indium phosphide material, the absorber layer is an indium gallium arsenide material, and the p-pole layer is a P-type doped indium phosphide material; The second metal electrode layer is formed by corroding the metal layer by chemical etching after depositing the metal layer on the second mesa; The second sub-n-pole layer is formed by etching the n-pole layer by wet etching; The second reflective surface is formed by etching the second sub-n-pole layer by wet etching. 5. The optical module according to claim 4, wherein the detection unit further comprises: a first light incident slope, and the first light incident slope is etched by wet etching. Formed by the sub-n-pole layer, the first optical signal enters the first sub-n-pole layer from the first light incident slope; The data recovery unit further includes: a second light incident slope, the second light incident slope is formed by etching the second sub-n-pole layer by wet etching, and the second optical signal is formed by The second light-incident slope enters the second sub-n-pole layer. 6. An optical network system, the optical network system comprising: an optical line terminal, an optical network unit, and an optical distribution network, the optical line terminal is connected to the optical network unit through an optical distribution network, characterized in that, The optical network unit includes any one of the integrated detectors as claimed in claims 1-4.