CN102690056B - A kind of formula of glass substrate of flat-panel monitor - Google Patents
A kind of formula of glass substrate of flat-panel monitor Download PDFInfo
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- CN102690056B CN102690056B CN201210095212.3A CN201210095212A CN102690056B CN 102690056 B CN102690056 B CN 102690056B CN 201210095212 A CN201210095212 A CN 201210095212A CN 102690056 B CN102690056 B CN 102690056B
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- 239000011521 glass Substances 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 12
- 238000004031 devitrification Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 9
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 9
- 239000000292 calcium oxide Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 239000005357 flat glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000004927 fusion Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- -1 content is too much Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006063 cullet Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
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- Glass Compositions (AREA)
Abstract
A formula for the glass substrate of flat-panel monitor, in the formula of above-mentioned glass substrate, the molar percentage of each moiety respectively: SiO
263.0 ~ 73.0%, Al
2o
33.0 ~ 12.5%, B
2o
33.0 ~ 12.5%, MgO 3.5 ~ 10.0%, CaO 1.0 ~ 10.0%, SrO 0.01 ~ 4.0%, SnO 0.04 ~ 0.15%.Adopt tin protoxide SnO as finings in this formula, SnO is the facile material of appearance and known nothing is harmful to character; MgO has when not reducing strain point and reduces high temperature viscosity, makes glass be easy to fusing, devitrification of glass ability can be made to decline; Following technical indicator can be reached: be 28 ~ 37 × 10 at the thermal expansivity of 50 ~ 350 degree by means of the present invention's glass substrate produced of filling a prescription
-7/ DEG C; Strain point is more than 680 DEG C, and density is less than 2.40g/cm
3, liquidus temperature is lower than 1100 degree, and liquidus viscosity is greater than 250000 pools, and in per kilogram glass substrate, the bubbles number of bubble diameter in > 0.lmm is invisible.
Description
Technical field
The invention belongs to glass manufacturing area, relate to the making formula of the base plate glass on flat-panel monitor LCD, particularly be suitable for the formula of the base plate glass as active matrix liquid crystal display device (AMLCD also claims TFT-LCD), Organic Light Emitting Diode (OLED) and low temperature polycrystalline silicon LTPS TFT-LCD.
Background technology
Along with the fast development of plane display industry, the demand of various display device is constantly increased, such as liquid-crystal display (LTPS TFT-LCD) device of active matrix liquid crystal display (AMLCD), Organic Light Emitting Diode (OLED) and application of cold temperature polycrystalline silicon technology, these display devices all produce thin film transistor (TFT) technology based on use thin film semiconductor material.At present, TFT can be divided into non-crystalline silicon (a-Si) TFT, polysilicon (p-Si) TFT and silicon single crystal (SCS) TFT, wherein non-crystalline silicon (a-Si) TFT is the technology that present main flow TFT-LCD applies, and the manufacturing process of polysilicon (p-Si) TFT is divided into high temperature polysilicon silicon technology and low-temperature polysilicon silicon technology.The performance of polysilicon (p-Si) TFT is better than non-crystalline silicon (a-Si) TFT, and main manifestations is: high electron mobility, larger current, less component size.The amorphous silicon technology of current use is ripe, in low temperature polycrystalline silicon (LTPS) the technology fast development thinning to flat-panel display device, efficient, low cost has advantage.
TFT-LCD display device very ripe at present, mainly use non-crystalline silicon (a-Si) TFT technology, the treatment temp in procedure for producing can complete below 600 degree.And for Activematric OLED (AMOLED), because OLED is electric current driving electronic device, it needs higher drive current, and current non-crystalline silicon (a-Si) technology is mainly applicable to the TFT-LCD of voltage driven, its drive current is lower, can not meet the requirement of AMOLED to drive current, and LTPS polysilicon (p-Si) TFT have higher drive current and electronic mobility, can meet the requirement of AMOLED to drive current.LTPS polysilicon (p-Si) TFT can improve the time of response of indicating meter simultaneously, improves the brightness of indicating meter, and directly can build circuit of display driving on the glass substrate, can manufacture more frivolous display device.
LTPS polysilicon (p-Si) TFT needs repeatedly to process at relatively high temperatures in processing procedure process, this just proposes higher requirement to base plate glass performance, its strain point should be high as much as possible, preferably higher than 650 DEG C, more preferably higher than 670 DEG C, 720 DEG C.The coefficient of expansion of glass substrate needs the expansion coefficient similar with silicon simultaneously, and reduce stress and destruction as far as possible, therefore the preferred thermal linear expansion coefficient of base plate glass is 28 ~ 39 × 10
-7/ DEG C between.For the ease of producing, reduce production cost, the glass as display base plate should have lower temperature of fusion and liquidus temperature.
For the glass substrate of plane display, need to form nesa coating, insulating film, semi-conductor (polysilicon, amorphous silicon etc.) film and metallic membrane by technology such as sputtering, chemical vapor deposition (CVD)s at underlying substrate glass surface, then various circuit and figure is formed by photoetch (Photo-etching) technology, if glass contains alkalimetal oxide (Na
2o, K
2o, Li
2o), in heat treatment process, alkalimetal ion diffuses into deposited semiconductor material, and infringement semiconductor film characteristic, therefore, alkali-free metal oxide answered by glass, it is preferred that both with SiO
2, Al
2o
3, B
2o
3and alkaline earth metal oxide RO(RO=Mg, Ca, Sr, Ba) etc. be the alkaline earth Boroalumino silicate glasses of principal constituent.Popularizing fast at present along with portable electric appts (as notebook computer, smart mobile phone, PDA), proposes requirements at the higher level to the lightweight of accessory.Thus the composition of glass substrate is had higher requirement, to ensure the needs adapting to modern liquid crystal displays.Glass substrate must have following properties: tool chemical resistant properties; Thermal expansivity must be close with the silicon of thin film transistor; Improve strain point of glass, to reduce thermal shrinking quantity; There is less density, to carry and hand-held.
In the course of processing of glass substrate, base plate glass is horizontal positioned, and glass is under Gravitative Loads, and what have to a certain degree is sagging, and sagging degree is directly proportional to the density of glass, be inversely proportional to the Young's modulus of glass.Along with Substrate manufacture is towards the development in large size, slimming direction, in manufacture, the sagging of sheet glass must draw attention.Therefore should design composition, make base plate glass have alap density and Young's modulus high as far as possible.
In order to obtain still non-alkali glass, utilizing fining gases, from glass melt, expelling the gas produced during glass reaction, in addition when homogenizing fusing, needing the fining gases again utilizing generation, increasing alveolar layer footpath, make it float, take out the small bubble of participation thus.
, the viscosity as the glass melt of glass substrate for plane display device is high, need with higher temperature melting.In the glass substrate of this kind, usually cause Vitrification at 1300 ~ 1500 degree, deaeration under the high temperature more than 1500 degree, to homogenize.Therefore, in finings, widely use the As that can produce fining gases in wide temperature range (1300 ~ 1700 degree of scopes)
2o
3.But, As
2o
3toxicity very strong, when the process of the manufacturing process of glass or cullet, likely contaminate environment and bring healthy problem, its use is restricted.Once trial antimony clarification carrys out substitute for arsenic clarification.But there is the problem causing environment and healthy aspect in antimony itself.Although Sb
2o
3toxicity unlike As
2o
3such height, but Sb
2o
3remain poisonous.And compared with arsenic, the temperature that antimony produces fining gases is lower, and the validity removing the bubble of this kind of glass is lower.
Summary of the invention
The object of the present invention is to provide a kind of design of components of environmentally friendly, the more perfect flat-panel screens glass substrate of performance, even if provide a kind of finings not use As
2o
3and/or Sb
2o
3, there is not the formula of the glass substrate becoming surface imperfection yet, devise a kind of formula of glass substrate of flat-panel monitor, utilize the obtained glass substrate of this formula to meet environmental requirement, not containing As
2o
3, Sb
2o
3and compound, this glass is not containing heavy metal barium and compound thereof simultaneously, has higher strain point, have higher transmitance, have lower temperature of fusion, have lower liquidus temperature, have lower density, meet flat pannel display industry development trend.
The technical solution used in the present invention is: a kind of formula of glass substrate of flat-panel monitor, and key is: in the formula of above-mentioned glass substrate, the molar percentage of each moiety is respectively:
SiO
263.0~73.0%，
Al
2O
33.0~12.5%，
B
2O
33.0~12.5%，
MgO 3.5~10.0%，
CaO 1.0~10.0%，
SrO 0.01~4.0%，
SnO 0.04~0.15%。
The invention has the beneficial effects as follows: 1, finings tin protoxide SnO, SnO holds facile material, and known nothing is harmful to character, when being used alone it as glass fining agent, there is the temperature range of higher generation fining gases, be applicable to the elimination of this kind of glass blister; 2, MgO has when not reducing strain point and reduces high temperature viscosity, makes glass be easy to fusing.When alkaline-earth metal resultant is less in alkali-free silicate glass, introduce the network-modifying ion Mg that strength of electric field is larger
+, easily produce local accumulation effect in the structure, nearest neighbour distance increased.Introduce more Al in this case
2o
3, B
2o
3deng oxide compound, with [AlO
4], [BO
4] state is when existing, because these polyhedrons are with negative electricity, attract subnetwork outer cationic, the degree of gathering of glass, crystallization ability are declined; When alkaline-earth metal resultant is more, network fracture is more serious, adds intermediate oxide MgO, the silicon-oxy tetrahedron of fracture can be made to reconnect and devitrification of glass ability is declined; 3, the glass substrate produced by means of glass ingredient formula provided by the invention can reach following technical indicator after testing: be 28 ~ 37 × 10 at the thermal expansivity of 50 ~ 350 degree
-7/ DEG C; Strain point is more than 680 DEG C, and density is less than 2. 40g/cm
3, liquidus temperature is lower than 1100 degree, and liquidus viscosity is greater than 250000 pools, and in per kilogram glass substrate, the bubbles number of bubble diameter in > 0.lmm is invisible.
Embodiment
A formula for the glass substrate of flat-panel monitor, importantly: in the formula of above-mentioned glass substrate, the molar percentage of each moiety is respectively:
SiO
263.0~73.0%，
Al
2O
33.0~12.5%，
B
2O
33.0~12.5%，
MgO 3.5~10.0%，
CaO 1.0~10.0%，
SrO 0.01~4.0%，
SnO 0.04~0.15%。
SiO
2preferred molar percentage be 63 ~ 68.23%.
The preferred molar percentage of MgO is 3.5 ~ 6.5%.
The preferred molar percentage of SnO is 0.08 ~ 0.09%.
Al
2o
3preferred molar percentage be 10.34 ~ 11.48%.
B
2o
3preferred molar percentage be 6.49 ~ 11.5%.
The preferred molar percentage of SrO is 2.5 ~ 3.72%.
The present invention is when implementing, after first the raw material uniform stirring including the corresponding oxide molar percent composition of above-mentioned each glass substrate being mixed, again by mixing raw material melt-processed, stir with platinum rod and discharge bubble and make glass metal homogenizing, then its temperature is reduced to shaping required glass substrate forming temperature range, pass through annealing theory, produce the thickness of the glass substrate that flat-panel screens needs, again simple cold work is carried out to shaping glass substrate, finally test is carried out to the Basic Physical Properties of glass substrate and become qualified product.
In the present invention, SiO
2molar percentage be 63.0 ~ 73.0%.Improve SiO
2content contributes to glass lightweight, and thermal expansivity reduces, and chemical resistant properties increases, but high temperature viscosity raises, and be unfavorable for like this melting, general kiln is difficult to meet, so determine SiO
2content be 63.0 ~ 73.0%.
Al
2o
3mole percent level be 3.0 ~ 12.5 %, in order to improve the intensity of glass structure, the A1 of high-content
2o
3contribute to strain point of glass, the increasing of bending strength, but easily there is crystallization in too high glass, therefore A1
2o
3mole percent level be defined as 3.0 ~ 12.5 %.
B
2o
3mole percent level be 3.0 ~ 12.5 %, B
2o
3effect more special, it can generate glass separately, is also a kind of well fusing assistant, B under high temperature melting condition
2o
3be difficult to form [BO
4], can high temperature viscosity be reduced, during low temperature B have capture free oxygen formed [BO
4] trend, make structure be tending towards tight, improve the low temperature viscosity of glass, prevent the generation of crystallization.But too much B
2o
3strain point of glass can be made to reduce, therefore B
2o
3mole percent level be defined as 3.0 ~ 12.5 %.
The effect of aluminum oxide and boron oxide affects glass viscosity and melting temperature (Tm).
MgO has when not reducing strain point and reduces high temperature viscosity, makes glass be easy to fusing.When alkaline-earth metal resultant is less in alkali-free silicate glass, introduce the network-modifying ion Mg that strength of electric field is larger
+, easily produce local accumulation effect in the structure, nearest neighbour distance increased.Introduce more Al in this case
2o
3, B
2o
3deng oxide compound, with [AlO
4], [BO
4] state is when existing, because these polyhedrons are with negative electricity, attract subnetwork outer cationic, the degree of gathering of glass, crystallization ability are declined; When alkaline-earth metal resultant is more, network fracture is more serious, adds intermediate oxide MgO, the silicon-oxy tetrahedron of fracture can be made to reconnect and devitrification of glass ability is declined.Therefore to note and Al when adding MgO
2o
3,b
2o
3mixing ratio.Its mole percent level is 3.5 ~ 10.0%.If MgO is greater than 10.0%, glass endurance can be deteriorated, simultaneously the easy devitrification of glass.
The molar content of CaO is 1.0 ~ 10.0 %, and calcium oxide is in order to promote melting and the adjustment glass ware forming of glass.If calcium oxide content is less than 1%, cannot reduce the viscosity of glass, content is too much, and glass easily can occur crystallization, and thermal expansivity also can amplitude variation be greatly, unfavorable to successive process greatly.So the molar content of CaO is defined as 1.0 ~ 10.0%.
The molar content of SrO is 0.01 ~ 4.0 %, and strontium oxide is as fusing assistant and prevent glass from occurring crystallization, if content is too much, glass density can be too high, causes the quality of product overweight.So the molar content of SrO is defined as 0.01 ~ 4.0 %.
In the present invention, can also be added with the finings of 0.04 ~ 0.15 % in glass composition, wherein finings is tin protoxide SnO, finings when melting as glass or defrother, to improve the melting quality of glass.If content is too much, glass substrate devitrification can be caused, so its addition is no more than 0.15%.
Provide the specific embodiment that in formula, each component measures with molar percentage below:
Table 1
| Composition (molar percentage) | Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Embodiment 6 | Embodiment 7 |
| SiO 2 | 63.0 | 63.59 | 66.14 | 65.32 | 64.91 | 68.77 | 68.11 |
| Al 2O 3 | 11.48 | 8.07 | 11.26 | 9.66 | 8.71 | 12.22 | 10.94 |
| B 2O 3 | 11.27 | 10.9 | 7.79 | 9.58 | 10.47 | 6.49 | 9.26 |
| MgO | 4.36 | 7.85 | 7.91 | 6.3 | 5.33 | 7.21 | 6.39 |
| CaO | 8.86 | 8.57 | 6.81 | 9.05 | 10.0 | 4.60 | 4.59 |
| SrO | 0.95 | 1.34 | 0.01 | 0.01 | 0.49 | 0.62 | 0.62 |
| SnO | 0.08 | 0.04 | 0.08 | 0.08 | 0.09 | 0.09 | 0.09 |
| Thermal expansivity ( 50-350) /×10 -7/℃ | 31.5 | 32.2 | 31.9 | 33.1 | 34.6 | 30.2 | 30.4 |
| Temperature of fusion/DEG C | 1655 | 1613 | 1651 | 1627 | 1634 | 1680 | 1660 |
| Glass liquidus temperature/DEG C | 1070 | 1060 | 1070 | 1050 | 1080 | 1070 | 1070 |
| Strain point/DEG C | 687 | 680 | 691 | 680 | 681 | 714 | 706 |
| Density/g/cm 3 | 2.387 | 2.394 | 2.389 | 2.387 | 2.390 | 2.387 | 2.367 |
| Young's modulus/GPa | 76 | 75 | 77 | 78 | 77 | 83 | 81 |
| Transmitance/% | 92.5 | 92.0 | 93.2 | 92.4 | 91.9 | 93.0 | 92.7 |
Table 2
| Composition (molar percentage) | Embodiment 8 | Embodiment 9 | Embodiment 10 | Embodiment 11 | Embodiment 12 | Embodiment 13 | Embodiment 14 |
| SiO 2 | 67.68 | 67.79 | 68.23 | 69.6 | 73 | 72.85 | 68.21 |
| Al 2O 3 | 5.56 | 12.44 | 10.34 | 8.85 | 9.64 | 12.5 | 3 |
| B 2O 3 | 11.76 | 10.07 | 12.5 | 9.25 | 6.12 | 3.0 | 11.50 |
| MgO | 7.81 | 4.14 | 4.12 | 6.5 | 3.5 | 6.98 | 10.0 |
| CaO | 4.60 | 2.38 | 1.0 | 3.44 | 3.73 | 3.40 | 4.83 |
| SrO | 2.50 | 3.09 | 3.72 | 2.49 | 4.0 | 1.12 | 2.38 |
| SnO | 0.09 | 0.09 | 0.09 | 0.09 | 0.01 | 0.15 | 0.08 |
| Thermal expansivity ( 50-350) /×10 -7/℃ | 35.5 | 30.0 | 31.1 | 31.8 | 30.4 | 28.1 | 36.7 |
| Temperature of fusion/DEG C | 1608 | 1649 | 1646 | 1655 | 1656 | 1689 | 1601 |
| Glass liquidus temperature/DEG C | 1090 | 1050 | 1060 | 1050 | 1080 | 1100 | 1050 |
| Strain point/DEG C | 682 | 680 | 682 | 689 | 683 | 731 | 680 |
| Density/g/cm 3 | 2.395 | 2.394 | 2.382 | 2.393 | 2.379 | 2.391 | 2.392 |
| Young's modulus/GPa | 75 | 76 | 77 | 75 | 79 | 85 | 75 |
| Transmitance/% | 92.0 | 92.6 | 93.1 | 92.5 | 92.0 | 92.8 | 93.2 |
As seen from the above embodiment, MgO, when preferred molar percentage is 3.5 ~ 6.5%, successfully achieves and reduces temperature of fusion when not reducing strain point, and temperature of fusion is stabilized in the interval of 1608 ~ 1651 DEG C.The preferred molar percentage of SnO is 0.08 ~ 0.09%, and in this is interval, the transmittance of glass is stabilized in the interval of 92.0 ~ 93.2%.
Claims (7)
1. a formula for the glass substrate of flat-panel monitor, is characterized in that: in the formula of above-mentioned glass substrate, the molar percentage of each moiety is respectively:
SiO
263.0~73.0%，
Al
2O
33.0~12.5%，
B
2O
33.0~12.5%，
MgO 4.12~10.0%，
CaO 1.0~10.0%，
SrO 0.62~4.0%，
SnO 0.04~0.15%。
2. the formula of the glass substrate of a kind of flat-panel monitor according to claim 1, is characterized in that: SiO
2preferred molar percentage be 63 ~ 68.23%.
3. the formula of the glass substrate of a kind of flat-panel monitor according to claim 1, is characterized in that: the preferred molar percentage of MgO is 4.12 ~ 6.5%.
4. the formula of the glass substrate of a kind of flat-panel monitor according to claim 2, is characterized in that: the preferred molar percentage of SnO is 0.08 ~ 0.09%.
5. the formula of the glass substrate of a kind of flat-panel monitor according to claim 1, is characterized in that: Al
2o
3preferred molar percentage be 10.34 ~ 11.48%.
6. the formula of the glass substrate of a kind of flat-panel monitor according to claim 1, is characterized in that: B
2o
3preferred molar percentage be 6.49 ~ 11.5%.
7. the formula of the glass substrate of a kind of flat-panel monitor according to claim 1, is characterized in that: the preferred molar percentage of SrO is 2.5 ~ 3.72%.
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|---|---|---|---|
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|---|---|---|---|---|
| CN104276754A (en) * | 2013-08-27 | 2015-01-14 | 东旭集团有限公司 | Silicate glass substrate for flat-panel display |
| CN104211300A (en) * | 2013-08-27 | 2014-12-17 | 东旭集团有限公司 | Formula of glass substrate with high modular ratio |
| CN106746601B (en) | 2016-12-30 | 2019-06-04 | 东旭集团有限公司 | It is used to prepare the composition, glassware and purposes of glass |
| CN109613218B (en) * | 2018-12-10 | 2020-05-12 | 彩虹（合肥）液晶玻璃有限公司 | Method and system for testing stock |
| CN110746111A (en) * | 2019-09-29 | 2020-02-04 | 彩虹显示器件股份有限公司 | Glass substrate and application thereof as glass substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992030B2 (en) * | 2002-08-29 | 2006-01-31 | Corning Incorporated | Low-density glass for flat panel display substrates |
| CN1787039A (en) * | 2004-12-06 | 2006-06-14 | 株式会社日立制作所 | Flat-panel display |
-
2012
- 2012-04-01 CN CN201210095212.3A patent/CN102690056B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992030B2 (en) * | 2002-08-29 | 2006-01-31 | Corning Incorporated | Low-density glass for flat panel display substrates |
| CN1787039A (en) * | 2004-12-06 | 2006-06-14 | 株式会社日立制作所 | Flat-panel display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102690056A (en) | 2012-09-26 |
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Effective date of registration: 20160425 Address after: 215300 Suzhou Development Zone, Kunshan, No. 167 Qianjin Road, the middle of the building (International Building), room 1, 1517 Patentee after: Dong Xu (Kunshan) display material Co., Ltd. Address before: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee before: Tungsu Group Co., Ltd. |