CN102686004A - Harmonic-wave-controllable frequency system for plasma generator - Google Patents
Harmonic-wave-controllable frequency system for plasma generator Download PDFInfo
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Abstract
The invention relates to a harmonic-wave-controllable radio frequency system for a plasma generator. The radio frequency system comprises a first radio frequency source for supplying radio frequency energy generating plasmas and a matching box connected between the first radio frequency source and a driving electrode, and by arranging a matching circuit, load impedance of the plasmas in a reaction cavity is matched with output impedance of the first radio frequency source. The harmonic-wave-controllable radio frequency system is characterized in that a harmonic wave control device is further arranged in the matching box and generates tuning impedance with impedance adjustable to adjust the harmonic wave impedance of the first radio frequency source, accordingly, the harmonic wave current of the first radio frequency source is restrained, and plasmas on the surface of a substrate can be evenly distributed; or the harmonic wave control device enables the output tuning impedance to be adjustable between high impedance and low impedance, so that magnitude of the harmonic wave current can be controlled. Density of the plasmas at the center of a substrate is different from that of the plasmas on the surface of the periphery, so that different etching effects can be correspondingly caused.
Description
Technical field
The present invention relates to a kind of radio system of plasma generator, particularly a kind of radio system that is used for the may command harmonic wave of plasma generator.
Background technology
At present, general indoor in the manufacture process of semiconductor device in the vacuum chamber of plasma generator, generate the plasma of introducing reacting gas wherein, the substrate of placing in the treatment chamber is carried out processing such as etching.
Existing as in the double frequency capacitance coupling plasma generator, be arranged with flat top electrode and bottom electrode in the vacuum reaction chamber in parallel.For example, on bottom electrode, apply first radio frequency source and second radio frequency source of the certain frequency of being separated by simultaneously, first radio frequency source (like 60MHz) that its medium frequency is higher dissociates or plasma density in order to control reacting gas intermediate ion; Second radio frequency source (like 2MHz) that frequency is lower is introduced bias voltage and is controlled ion energy and the Energy distribution that incides substrate.
Yet; Because the nonlinear effect that plasma and radio frequency source interact and cause; Have the secondary of the radio frequency source of high frequency, three times or other harmonic wave generation; Influence plasma distribution in the reaction chamber: make the substrate that is placed on the bottom electrode, the plasma density of its top, center is higher, and the plasma density of corresponding substrate edge position is lower; The frequency of radio frequency source is high more, and the uneven phenomenon of this plasma distribution is obvious more, thereby causes substrate etched inhomogeneous.
Summary of the invention
The purpose of this invention is to provide a kind of radio system that is used for the may command harmonic wave of plasma generator; The harmonic wave control device of exportable tuned impedance is set in the matching box between radio frequency source and vacuum reaction chamber; The harmonic current of the radio frequency source of high frequency is suppressed or regulates, with of the distribution of control plasma at substrate surface.
In order to achieve the above object; Technical scheme of the present invention provides a kind of radio system that is used for the may command harmonic wave of plasma generator; Apply RF energy to drive electrode, in the vacuum reaction chamber of plasma generator, the plasma that forms reacting gas is handled substrate; Wherein, said radio system comprises:
First radio frequency source, it provides the RF energy that generates said plasma; And
Matching box, it is connected between said first radio frequency source and the said drive electrode, wherein is provided with match circuit, and the load impedance of plasma in the said reaction chamber and the output impedance of said first radio frequency source are complementary;
Be characterized in, also be provided with the harmonic wave control device in the said matching box, be connected with said first radio frequency source, said harmonic wave control device produces the adjustable tuned impedance of a resistance value, and the harmonic impedance of said first radio frequency source is adjusted.
The harmonic current of said first radio frequency source is directly proportional with the power of said first radio frequency source; In power one timing of said first radio frequency source, the resistance value of the tuned impedance of its harmonic current and the output of said harmonic wave control device is inversely proportional to.
Said substrate is placed on said reaction chamber inner bottom part;
The said plasma of this substrate surface, its density is successively decreased in the position of corresponding substrate center maximum and to the substrate edge position;
This density contrast at corresponding substrate center of said plasma and edge is directly proportional with the harmonic current of said first radio frequency source, and promptly the resistance value with said tuned impedance is inversely proportional to.
Said harmonic wave control device is inductance, low pass filter or the band stop filter of between said first radio frequency source and said drive electrode, connecting and being provided with;
Perhaps, said harmonic wave control device is electric capacity, high pass filter or the band pass filter of parallelly connected ground connection between said first radio frequency source and said drive electrode.
Said harmonic wave control device is the inductance that said series connection is provided with, and its inductance value is 0.1 μ H ~ 100 μ H.
Said harmonic wave control device is said low pass filter, and it further is included in two inductance of connecting and being provided with between said first radio frequency source and the said drive electrode, and between said two inductance the electric capacity of parallelly connected ground connection; Said two inductance are 66nH; Said electric capacity is 53pF.
Said radio system also comprises second radio frequency source of interior ion energy of control reaction chamber and Energy distribution; The frequency of said second radio frequency source is with the poor frequency less than said first radio frequency source in certain interval.
The optional frequency of said first radio frequency source comprises 27MHz, 40MHz, 60MHz, 100MHz or 120MHz; The optional frequency of said second radio frequency source comprises 13MHz, 2MHz or 400KHz.
The present invention is particularly useful for said first radio frequency source of frequency greater than 40 MHz.
Said drive electrode is included in top electrode and the bottom electrode that laterally arranges in the said reaction chamber;
Said first radio frequency source is applied to one of said top electrode or bottom electrode through said matching box; Dispose said match circuit and harmonic wave control device for said first radio frequency source in the said matching box;
Said second radio frequency source through the matching box of same or other setting, is applied on said top electrode or the bottom electrode, and is applied on the identical or different said radio frequency electrode with said first radio frequency source; Dispose said match circuit for said second radio frequency source in the said matching box.
Adjust the said harmonic wave control device of the harmonic impedance of first radio frequency source, it is arranged between the output and said radio frequency electrode of match circuit of said first radio frequency source;
Perhaps, said harmonic wave control device is arranged between the output and said radio frequency electrode of match circuit of said second radio frequency source, and is connected with said first radio frequency source;
Perhaps, said harmonic wave control device is arranged between the public output and said radio frequency electrode of match circuit of said first, second radio frequency source;
Perhaps, the output of the match circuit of the output of the match circuit of said first radio frequency source and said second radio frequency source is connected with a harmonic wave control device respectively.
Compared with prior art; The radio system that is used for the may command harmonic wave of plasma generator according to the invention; Its advantage is: the present invention is through said harmonic wave control device; The tuned impedance that can export a high impedance suppresses the secondary of first radio frequency source, three times harmonic current, and the plasma physical efficiency of substrate surface is evenly distributed; Perhaps, adjustable between high impedance to Low ESR through the tuned impedance that makes its output, control the size of harmonic current, thereby can obtain different plasma densitys in substrate center and edge surface, and the different etch effect of corresponding generation.
Description of drawings
Fig. 1 is the general structure sketch map according to the radio system of the may command harmonic wave that is used for plasma generator of a specific embodiment of the present invention;
Fig. 2 is the electrical block diagram when being low pass filter according to harmonic wave control device described in the radio system of a specific embodiment of the present invention;
Fig. 3 is radio system according to a specific embodiment of the present invention sketch map to the etch-rate of substrate diverse location under different impedance.
Embodiment
Below in conjunction with description of drawings embodiment of the present invention.
The radio system that is used for the may command harmonic wave of plasma generator according to the invention is provided with the harmonic wave control device in the matching box between radio frequency source and radio frequency electrode, it provides a tuned impedance that the harmonic current of the radio frequency source of high frequency is suppressed or regulates.Present invention is described below in conjunction with specific embodiment.
Fig. 1 is the general structure sketch map according to the radio system of the may command harmonic wave that is used for plasma generator of a specific embodiment of the present invention; As shown in Figure 1; In plasma generator, be provided with the reaction chamber 30 of vacuum; Go up to place substrate 40 at the electrostatic chuck 33 (ESC) of its bottom, be provided with bottom electrode 31 in this electrostatic chuck 33, be provided with the top electrode 32 parallel with bottom electrode 31 at reaction chamber 30 inner tops.Under the radio system effect, the reacting gas 60 of introducing reaction chamber 30 can dissociate and form plasma 50, thereby further said substrate 40 is carried out processing such as etching.
Said radio system comprises a matching box 20 (matching box) that electrically connects with cable etc. and said bottom electrode 31, and is applied to first radio frequency source 11, second radio frequency source 12 of said bottom electrode 31 through said matching box 20.
Wherein, the frequency of said first radio frequency source 11 is higher, and through between upper/lower electrode, forming rf electric field, the generation and the density of article on plasma body 50 are controlled.Said second radio frequency source 12 is controlled the ion energy and the Energy distribution that incide substrate 40 through control plasma 50 sheath layer automatic bias.The frequency of said first radio frequency source 11 can be 27MHz, 40MHz, 60MHz, 100MHz or 120MHz etc.; Be complementary with it, the frequency of said second radio frequency source 12 can be 13MHz, 2MHz or 400KHz etc.
The match circuit (not shown) of said matching box 20 through being provided with; The load impedance of plasma 50 in the said reaction chamber 30 and the output impedance of said first, second radio frequency source are complementary; Reduce the reflectivity of said first, second radio frequency source, thereby make first, second radio frequency source be applied to said bottom electrode 31 with the power output of maximum separately.
In order to realize harmonic wave control, the said radio system of present embodiment at the output of said matching box 20, promptly after the common port of the match circuit of said first, second radio frequency source, further is provided with a harmonic wave control device 21.Said harmonic wave control device 21 provides a resistance value adjustable tuned impedance, the harmonic impedance of first radio frequency source 11 of its medium-high frequency is adjusted, thereby the secondary of this first radio frequency source 11, three times harmonic current are controlled.
Need to prove; The radio frequency that the present invention is particularly useful for first radio frequency source 11 is the application scenario greater than 40 MHz; In the case; Invention best results of the present invention can suppress the secondary of first radio frequency source 11, three times harmonic current through the said tuned impedance of exporting a high impedance better, and the plasma 50 on substrate 40 surfaces can evenly be distributed; Perhaps; More effectively adjustable between high impedance to Low ESR through the tuned impedance that makes its output; Control the size of this harmonic current, this moment can be at substrate 40 centers and edge surface obtain different plasma densitys, thereby correspondingly produce different etch effect.
Alternatively, said harmonic wave control device 21 is inductance, low pass filter or the band stop filters of between said first radio frequency source 11 and said drive electrode, connecting and being provided with; Perhaps, said harmonic wave control device 21 is electric capacity, high pass filter or band pass filters of parallelly connected ground connection between said first radio frequency source 11 and said bottom electrode 31.
Alternatively, the series inductance that can dispose 0.1 μ H ~ 100 μ H is as said harmonic wave control device 21, and it is applicable to the harmonic wave control of regulating first radio frequency source 11 in the certain frequency scope; Preferably, said inductance value can be 2 μ H ~ 3 μ H.
Alternatively, as shown in Figure 2, can dispose low pass filter as said harmonic wave control device 21, can accurately regulate to the harmonic wave that a certain specific first radio frequency source, 11 frequencies produce.Particularly, said low pass filter is included in two inductance of connecting and being provided with between said first radio frequency source 11 and the said bottom electrode 31, and between said two inductance the electric capacity of parallelly connected ground connection.Preferably, when said first radio frequency source 11 was 60MHz, said two inductance were 66nH, and said electric capacity is 53pF.
In conjunction with Fig. 1; Fig. 3 shows the frequency 60MHz with first radio frequency source 11; In the specific embodiment of the frequency 2MHz of second radio frequency source 12; The modulating action of the second harmonic current of 21 pairs first radio frequency sources 11 of said harmonic wave control device: abscissa is represented the diameter of substrate 40 among Fig. 3, and ordinate is represented the speed to oxide etching on the substrate 40.It is thus clear that; When said harmonic wave control device 21 was not exported tuned impedance or exported a low-impedance tuned impedance, said second harmonic current was bigger, and plasma 50 density of promptly corresponding substrate 40 centers are higher; Marginal position is lower; Shown in the curve 1 of big rise and fall, the speed at etch substrate 40 centers that 5400A/min is above, be far away faster than the speed of the about 4200A/min in edge of etch substrate 40.
By comparison; If the tuned impedance of said harmonic wave control device 21 outputs one high impedance; Second harmonic current is diminished, plasma 50 density contrasts of corresponding substrate 40 centers and substrate 40 marginal positions are diminished, promptly the speed at etch substrate 40 centers is decreased to about 4700A/min; Speed difference between about the speed 4200A/min at itself and etch substrate 40 edges obviously diminishes, and the curve 2 that therefore obtains is comparatively smooth.
Thereby harmonic wave control device 21 according to the invention can suppress the secondary of first radio frequency source 11, three times harmonic current through the tuned impedance of exporting a high impedance, and the plasma 50 on substrate 40 surfaces can evenly be distributed; Perhaps, adjustable between high impedance to Low ESR through the tuned impedance that makes its output, control the size of harmonic current, and corresponding at substrate 40 centers and the edge obtain different plasma densitys, to produce different etch effect.
Enforcement structure of the present invention is not limited to foregoing description, and for example, said first radio frequency source can also be applied on the top electrode through matching box; Said second radio frequency source can be applied to said first radio frequency source identical or different top electrode or bottom electrode on.The above-mentioned structure (Fig. 1) that has provided after the match circuit common port that the harmonic wave control device is arranged on first, second radio frequency source; This harmonic wave control device can also only be provided with after the match circuit of first radio frequency source, perhaps only after the match circuit of second radio frequency source, is provided with; Or, a harmonic wave control device is set after the match circuit of first, second radio frequency source respectively, but said harmonic wave control device is only adjusted to the harmonic current of first radio frequency source of high frequency.
Although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (11)
1. radio system that is used for the may command harmonic wave of plasma generator; Apply RF energy to drive electrode; In the vacuum reaction chamber (30) of plasma generator; The plasma (50) that forms reacting gas (60) is handled substrate (40), and wherein, said radio system comprises:
First radio frequency source (11), it provides the RF energy that generates said plasma (50);
Matching box (20); It is connected between said first radio frequency source (11) and the said drive electrode; Wherein be provided with match circuit, the load impedance of the interior plasma of said reaction chamber (30) (50) and the output impedance of said first radio frequency source (11) are complementary
It is characterized in that:
Also be provided with harmonic wave control device (21) in the said matching box (20); Be connected with said first radio frequency source (11); Said harmonic wave control device (21) produces the adjustable tuned impedance of a resistance value, and the harmonic impedance of said first radio frequency source (11) is adjusted.
2. be used for the radio system of the may command harmonic wave of plasma generator according to claim 1, it is characterized in that, the harmonic current of said first radio frequency source (11) is directly proportional with the power of said first radio frequency source (11); In power one timing of said first radio frequency source (11), the resistance value of the tuned impedance of its harmonic current and said harmonic wave control device (21) output is inversely proportional to.
3. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 2, it is characterized in that said substrate (40) is placed on said reaction chamber (30) inner bottom part;
The said plasma (50) on this substrate (40) surface, its density is successively decreased in the position at corresponding substrate (40) center maximum and to substrate (40) marginal position;
This density contrast at said plasma (50) corresponding substrate (40) center and edge is directly proportional with the harmonic current of said first radio frequency source (11), and promptly the resistance value with said tuned impedance is inversely proportional to.
4. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 3; It is characterized in that said harmonic wave control device (21) is inductance, low pass filter or the band stop filter of between said first radio frequency source (11) and said drive electrode, connecting and being provided with;
Perhaps, said harmonic wave control device (21) is electric capacity, high pass filter or the band pass filter of parallelly connected ground connection between said first radio frequency source (11) and said drive electrode.
5. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 4, it is characterized in that said harmonic wave control device (21) is the inductance that said series connection is provided with, its inductance value is 0.1 μ H ~ 100 μ H.
6. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 4; It is characterized in that; Said harmonic wave control device (21) is said low pass filter; It further is included in two inductance of connecting and being provided with between said first radio frequency source (11) and the said drive electrode, and between said two inductance the electric capacity of parallelly connected ground connection; Said two inductance are 66nH; Said electric capacity is 53pF.
7. be used for the radio system of the may command harmonic wave of plasma generator according to claim 1, it is characterized in that, also comprise second radio frequency source (12) of control interior ion energy of reaction chamber (30) and Energy distribution; The frequency of said second radio frequency source (12) is with the poor frequency less than said first radio frequency source (11) in certain interval.
8. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 7, it is characterized in that the optional frequency of said first radio frequency source (11) comprises 27MHz, 40MHz, 60MHz, 100MHz or 120MHz; The optional frequency of said second radio frequency source (12) comprises 13MHz, 2MHz or 400KHz.
9. like claim 1 or the 7 said radio systems that are used for the may command harmonic wave of plasma generator, it is characterized in that the frequency of said first radio frequency source (11) is greater than 40MHz.
10. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 7, it is characterized in that said drive electrode is included in top electrode (32) and the bottom electrode (31) that laterally arranges in the said reaction chamber (30);
Said first radio frequency source (11) is applied to one of said top electrode (32) or bottom electrode (31) through said matching box; Dispose said match circuit and harmonic wave control device (21) for said first radio frequency source (11) in the said matching box;
Said second radio frequency source (12) through the matching box of same or other setting, is applied on said top electrode (32) or the bottom electrode (31), and is applied on the identical or different said radio frequency electrode with said first radio frequency source (11); Dispose said match circuit for said second radio frequency source (12) in the said matching box.
11. like the said radio system that is used for the may command harmonic wave of plasma generator of claim 10; It is characterized in that; Adjust the said harmonic wave control device (21) of the harmonic impedance of first radio frequency source (11), it is arranged between the output and said radio frequency electrode of match circuit of said first radio frequency source (11);
Perhaps, said harmonic wave control device (21) is arranged between the output and said radio frequency electrode of match circuit of said second radio frequency source (12), and is connected with said first radio frequency source (11);
Perhaps, said harmonic wave control device (21) is arranged between the public output and said radio frequency electrode of match circuit of said first, second radio frequency source;
Perhaps, the output of the match circuit of the output of the match circuit of said first radio frequency source (11) and said second radio frequency source (12) is connected with a harmonic wave control device (21) respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110064745.0A CN102686004B (en) | 2011-03-17 | 2011-03-17 | Harmonic-wave-controllable frequency system for plasma generator |
| TW100143520A TWI566644B (en) | 2011-03-17 | 2011-11-28 | A radio frequency system for controllable harmonics of a plasma generator |
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| CN201110064745.0A CN102686004B (en) | 2011-03-17 | 2011-03-17 | Harmonic-wave-controllable frequency system for plasma generator |
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| CN102686004B CN102686004B (en) | 2015-05-13 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128668A (en) * | 2019-12-17 | 2020-05-08 | 西安航天动力研究所 | Impedance matching system and method for radio frequency plasma |
| CN118590078A (en) * | 2024-08-06 | 2024-09-03 | 深圳市瀚强科技股份有限公司 | RF power equipment, RF power system |
| CN118590077A (en) * | 2024-08-06 | 2024-09-03 | 深圳市瀚强科技股份有限公司 | RF power supply equipment and RF power supply system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107454731B (en) * | 2016-05-30 | 2019-10-11 | 北京北方华创微电子装备有限公司 | Radio frequency automatic impedance matcher and semiconductor equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111128668A (en) * | 2019-12-17 | 2020-05-08 | 西安航天动力研究所 | Impedance matching system and method for radio frequency plasma |
| CN111128668B (en) * | 2019-12-17 | 2022-03-04 | 西安航天动力研究所 | Impedance matching system and method for radio frequency plasma |
| CN118590078A (en) * | 2024-08-06 | 2024-09-03 | 深圳市瀚强科技股份有限公司 | RF power equipment, RF power system |
| CN118590077A (en) * | 2024-08-06 | 2024-09-03 | 深圳市瀚强科技股份有限公司 | RF power supply equipment and RF power supply system |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI566644B (en) | 2017-01-11 |
| TW201240529A (en) | 2012-10-01 |
| CN102686004B (en) | 2015-05-13 |
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