CN1026779C - Method for reducing diffusion of alkali metal ions in glass and products made thereby - Google Patents
Method for reducing diffusion of alkali metal ions in glass and products made thereby Download PDFInfo
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- CN1026779C CN1026779C CN 85106620 CN85106620A CN1026779C CN 1026779 C CN1026779 C CN 1026779C CN 85106620 CN85106620 CN 85106620 CN 85106620 A CN85106620 A CN 85106620A CN 1026779 C CN1026779 C CN 1026779C
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- glass
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- silane
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- screen layer
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- 239000011521 glass Substances 0.000 title claims abstract description 149
- 229910001413 alkali metal ion Inorganic materials 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 48
- 238000009792 diffusion process Methods 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 90
- 239000011248 coating agent Substances 0.000 claims abstract description 80
- 229910000077 silane Inorganic materials 0.000 claims abstract description 52
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 50
- 150000001875 compounds Chemical class 0.000 claims abstract description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims abstract description 30
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 25
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- 239000005329 float glass Substances 0.000 claims description 15
- 238000000197 pyrolysis Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007766 curtain coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 150000002927 oxygen compounds Chemical class 0.000 claims 2
- 238000010790 dilution Methods 0.000 claims 1
- 239000012895 dilution Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 23
- 239000010703 silicon Substances 0.000 abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 22
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000005012 migration Effects 0.000 abstract description 2
- 238000013508 migration Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 90
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 239000003513 alkali Substances 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 7
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 238000002386 leaching Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052728 basic metal Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000005357 flat glass Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 150000003818 basic metals Chemical class 0.000 description 3
- 235000011089 carbon dioxide Nutrition 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002175 menstrual effect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- -1 silicon ester Chemical class 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- BKOOMYPCSUNDGP-UHFFFAOYSA-N 2-methylbut-2-ene Chemical group CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical class [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RTCGUJFWSLMVSH-UHFFFAOYSA-N chloroform;silicon Chemical compound [Si].ClC(Cl)Cl RTCGUJFWSLMVSH-UHFFFAOYSA-N 0.000 description 1
- 239000008264 cloud Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- DEPUMLCRMAUJIS-UHFFFAOYSA-N dicalcium;disodium;dioxido(oxo)silane Chemical compound [Na+].[Na+].[Ca+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DEPUMLCRMAUJIS-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001055 reflectance spectroscopy Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
The present invention relates to a barrier layer that prevents migration of alkali metal ions from the glass surface. The barrier layer is deposited by pyrolysing silane gas on the surface of the glass at temperatures above 600 ℃ in the presence of a gaseous electron donating compound, whereby oxygen from the glass forms together with silicon a barrier layer on the surface of the glass with a thickness of up to 50 nm. Such shielding layers are used in glasses coated with conductive or infrared-reflective coatings and in liquid crystal display devices. Preventing alkali metal ions from migrating into the alkali metal ion sensitive coating.
Description
The present invention relates to manufacturing and application that the top coat glass of screen layer is provided for the alkali ion movement of glass outer surface, also relate to the goods that comprise such coated glass.
Known, some coating on glass since the glass outer surface alkali ion movement in coating and deterioration.For example, narrated the cloud outward appearance of transparent conducting coating on the soda lime glass in the british patent specification 705934.If removed alkalimetal ion by glass surface before being coated with conductive layer, cloud and mist can reduce; Perhaps before being coated with conducting film, be coated with an intermediate coat earlier, for example silicon-dioxide or titanium oxide, cloud and mist also can reduce.Silicon dioxide film is with a kind of the making in following two kinds of methods.A kind of method be silicon tetrachloride, Silicon bromide or the silicon-chloroform soln volatile non-aqueous solution be sprayed onto on glass and exposed to weather up to the coating drying, then it is polished; Another kind method is the silicon ester that sheet glass is immersed in partial hydrolysis, and is for example also dry in the tetraethoxy.
European patent specification EP0071865A3 relates to similarly because alkalimetal ion is diffused into glass surface and causes the problem of the conductive coating deterioration on the soda lime glass with the tectum of basic metal sensitivity is interacted.Specification sheets mentions that the possibility of result of diffusion makes that conductive layer produces white opacity body, transparency reduction, resistance increases and physical and chemical stability reduces.Mention that also liquid crystal display device, electrochromic device and unformed silicon photocell etc. are because of the problem of alkalimetal ion by glass matrix diffusion deterioration.These devices generally all have conductive layer, indium tin oxide for example on glass, but the influence that EP0071865A3 has mentioned alkalimetal ion and the interaction of those conductive layers of covering above produces (alkalimetal ion to any direct influence of conductive layer except).EP0071865A3 proposes, and stops diffusion from the alkalimetal ion of glass matrix with the silicon oxide screen layer that contains the hydrogen that is keyed on the silicon.Screen layer vacuum available vapour deposition process, sputtering method, ion plating, sol/gel method or make with CVD method that is chemical Vapor deposition process.Described on glass matrix the CVD method condition of silicon oxide layer deposited be: temperature is 300 ℃ to 550 ℃, oxygen and single silane gas (SiH
4) ratio be O
2: SiH
4Reach 10: 1 to 60: 1, under oxidizing condition, carry out.
British patent specification 2,031,756B has disclosed the application of the metal oxide layer that comprises silicon oxide, these oxide skins as the decay color the layer in order to reduce the radiation reflected colour that metal oxide semiconductor infrared reflection coating on glass presents.Metal oxide semiconductor can be a stannic oxide of mixing fluorine, thereby and specification sheets mention that as you know amorphous silicon oxide layer forms the effect of cloud Weihe a kind of net used for fishing face when stoping the stannic oxide layer of avoiding covering on the last deposition from the diffusion of the alkalimetal ion of glass.According to british patent specification 2031756B, the layer of used decay color, its specific refractory power preferably 1.7~1.8, thickness is 64~80nm preferably.Comprise silicon oxide those coatings can in 300~500 ℃, make it in existence to be deposited on hot preparation on glass with silane with chemical Vapor deposition process under the gas situation of oxidation.
British patent specification 1,507,465 have narrated a kind of silicon reflectance coating being coated onto on the sheet glass and the method to the sunlight feed glass of attractive in appearance, charming silver-colored reflected colour.Coating process is the hot-zone of silane gas being led to glass surface, thereby and keep non-oxide state in said hot-zone so that silane pyrolysis at the silicon coating that is depositing reflection on the glass surface.British patent specification 1,573,154 have narrated 1,507, and 645 produce improving one's methods of the feed glass that flashes back the sunlight; In improving one's methods, add the compound that gasiform provides electronics, for example ethene in the gas that contains silane, makes coated glass obtain unexpected improvement aspect the anti-outside alkali etch.The compound that provides electronics is generally 0.1~2.0 with the ratio of silane, preferably 0.2~0.5, although specification sheets is mentioned ratio greater than 2.5, for example 5 o'clock, can produce alkali resistant silicon coating with fine resistance to marring, but when the compound that nothing provides electronics exists to seeing that light does not have the reflectivity of height.This coating can be coated on the building glass, has for example narrated to be coated in thick sodium-calcium-silicate float glass of 6mm and the application on the rolled glass.Find that analyzing the back as the resulting coating of the compound that provides electronics although they prepare, they still contain some oxygen under non-oxide condition with ethene.
Numerous application are found, as british patent specification 1,573, that is narrated in 154 is such, resulting thin Clear coating contains the oxygen from glass when a high proportion of compound that provides electronics exists, and as the screen layer from the alkali ion movement of glass surface surprising effect is arranged.Resulting coated glass can be used as the matrix to the tectum of alkalimetal ion sensitivity (or directly be coated on the screen layer or be coated on the middle layer).
According to the present invention, provide to reduce and be diffused into tectal method from the alkalimetal ion in the alkali metal containing ionic glass, this method is included in the middle of glass and the tectum the transparent screen layer that method with pyrolysis silane gas is coated with the siliceous and oxygen of last layer, it is characterized in that silane is to exist gasiform to provide under the compound situation of electronics, in pyrolysis more than 600 ℃ on glass surface, thereby on glass surface, form the thick transparent screen layer that reaches 50nm from the oxygen of glass with silicon.
" transparent screen layer " speech used herein refers on the transparent float glass that is coated in thick 6mm, makes the light transmission rate of coated glass be at least 75% coating.
The invention allows for the coating process of alkali metal containing ionic glass, this method is to exist gasiform to provide under the compound situation of electronics in silane gas, in pyrolysis more than 600 ℃ on glass surface, thereby on glass surface, form the thick transparent screen layer that reaches 50nm of siliceous and oxygen with silicon, and at last the diffusion-sensitive layer from the alkalimetal ion of glass is coated on the glass surface from the oxygen of glass.
To the diffusion-sensitive layer from the alkalimetal ion of glass can be the photic zone of blended metal oxide.
The compound that provides electronics is the compound that contains electronics, these electronics or connect form or as lone pair, they can enter in the suitable electronic structure that is subjected to host molecule with key.Its example of the compound that provides electronics that contains keyed jointing form donor electron is a unsaturated hydrocarbon, particularly alkene (alkene) and alkynes (alkyne), for example ethene, divinyl, amylene, two fluoro ethene and acetylene (C
2H
2) and aromatic hydrocarbon, for example benzene and dimethylbenzene.Its example of the compound that provides electronics that contains its lone pair form donor electron is ethers, amine, aldehydes, ketone, alcohols, hydrides of nitrogen, carbon monoxide and carbonic acid gas.For convenience's sake, the most handy those are the compound that gasiform provides electronics under the residing condition of environment, and are the 5KPa(kilobar at least 60 ℃ of following vapour pressures) other those compound that provides electronics that do not make troubles when using also can use.
The compound that provides electronics is not too puzzled in the effect aspect the transparent screen layer of formation on glass with the silicon from silane at the oxygen from glass.Although mechanism is still unclear, believe with glass surface on to provide the absorption of compound of electronics relevant.
Therefore, though can under all non-existent situation of any oxygen-containing gas, carry out pyrolysis, obtain be still siliceous and from the Clear coating of the oxygen of glass rather than the reflectance coating of silicon.
Its rate of migration of oxygen carrier from glass depends on glass temperature, is that deposited coatings is in order to increase the utilization ratio from the oxygen carrier of glass more than 600 ℃ at glass temperature why.Oxygen in the transparent screen layer does not need to be supplied with by glass entirely, but can supply with a part by the compound that provides electronics, and other oxygen obtain in the time of can being exposed to coated glass in the atmospheric oxygen after the coating operation.Yet, though preferably contain the compound that provides electronics that some oxygen generally are used as reductive agent (as carbon monoxide and alcohol) with the compound that provides electronics of anaerobic or with those.Usually preferably avoid using oxygen-containing gas because this gas reach have the sedimental hot glass surface of Powdered silicon oxide before meeting and silane reaction.Should avoid existing the oxygen of molecularity especially.
Advantage of the present invention is that the compound that provides electronics is an anaerobic.The example of the compound that provides electronics of available anaerobic is unsaturated hydrocarbon, aromatic hydrocarbon, amine and hydrides of nitrogen.
Because the available oxygenate quality from glass is limited, therefore its thickness of the resulting Clear coating of the compound that provides electronics with anaerobic is restricted, and present invention is specifically related to transparent screen layer siliceous and oxygen and the thick 50nm of reaching.
The ratio that provides the compound of the electronics silane required with obtaining Clear coating will depend on the used concrete compound that provides electronics, this just can be easy to determine it with simple test, in the test, with the compound that provides electronics and silane than increase method be tested to obtain satisfied transparent coatings till.Gasiform provides the proper ratio of the compound of electronics and silane generally 0.5: 1~15: the 1(volume ratio) in the scope.When using alkene, find alkene: silane ratio in 3: 1~10: 1 scopes the time gained result best.
The compound that provides electronics of some anaerobic and the ratio of silane are used when too much, find, have hindered the formation of any coating, therefore should avoid.Constitute superfluous specific proportions and will depend on the used special compound that provides electronics, this can easily determine with simple experiment.
Because used transparent screen layer can prepare under no free oxygen and compound are generally regarded the condition of compound of oxygenant as in the present invention, can be coated onto screen layer on the float glass strip, when the glass strip on bath of molten metal by the time, form screen layer thereon and molten metal there is no too big oxidation danger.Preferably be in 600~750 ℃, carry out coating in the time of particularly in 600~700 ℃ the temperature range at glass.
Screen layer can be with laminar flow method coating, and its instrument is in british patent specification 1,507, narrates in 465.The preferably single silane of used silane, and and rare gas element, for example nitrogen mixes and uses.
The used coating of the present invention is efficiently as the screen layer of alkali ion movement, when coating be 15nm when so thin income effect splendid, and thinner coating, for example 5nm or when thinner, its shield property is better.
Use for some, need highly transparent, its light transmission rate at least 80% of the coating on the transparent float glass of thick 6mm is better.In addition, use, wish that screen layer has good anti-outside alkali erosion for some.We find that coatings prepared contains the carbon of sufficient amount when having the compound that organically provides electronics, and coating has the ability of good anti-outside alkali etch.
After the deposited barrier, the layer from the alkalimetal ion diffusion-sensitive of glass is coated on the whole screen layer.The available known method of this layer, the surperficial first-class method coating of for example arriving coating with sputtering method, chemical Vapor deposition process or spraying liquid or solid reactant.
The alkalimetal ion that the coated glass that has been coated with screen layer according to the present invention is used for reducing alkali metal containing ionic glass is diffused in the tectum to the alkalimetal ion sensitivity, and this tectum can directly be coated on the screen layer or be coated on the middle layer.Tectum can be the conducting metal oxide tectum of printing opacity.Resistivity is generally less than 500 ohm every square to this tectum when industrial when being used for; The resistivity of some application need is much lower, for example less than 50 ohm every square, and makes coating that alap resistivity be arranged, and satisfied optical property is arranged again simultaneously.According to EP0071865A3 above-mentioned, such coating has the ratio of less inequality tendency when alkalimetal ion is spread by lower floor's glass matrix, make that simultaneously light transmission is impaired and reduce specific conductivity, for example the conducting metal oxide of printing opacity is adulterated metal oxide, comprising usually with the sedimentary Indium sesquioxide of mixing tin of sputtering method, particularly, particularly mix the stannic oxide of fluorine with the stannic oxide of sputtering method or chemical Vapor deposition process or solution or powder spraying method dopant deposition.The thickness of conductive layer will depend on required specific conductivity, usually in 50~1500nm scope.
The metal oxide of electrically conducting transparent is for example mixed the Indium sesquioxide of tin and is mixed the stannic oxide of fluorine, and their reflected infra-red radiations in general therefore are used to be coated on the window glass so that heat turns back in the buildings.When as infrared reflecting layer, this coat-thickness scope is generally in 200~1000nm scope.
Therefore, according to another aspect of the present invention, make the sheet glass of conduction, it comprises alkali metal containing ionic glass matrix, the latter under the situation that the compound that has gasiform to provide electronics exists in use more than 600 ℃ the pyrolysis of silane gas the method on the glass surface the pyrolysis of silane gas on glass surface, coat the transparent screen layer of the thick 50nm of reaching of transparent siliceous and oxygen, thereby the oxygen from glass forms transparent screen layer with silicon on glass surface, and the conductive metal oxide layer of resistivity less than 500 ohm every square is coated on the whole screen layer.The metal oxide layer of conduction can be that photic zone also can be adulterated metal layer.
Equally, the invention provides infrared external reflection sheet glass, it comprises alkali metal containing ionic glass matrix, this glass matrix has applied the transparent screen layer of the thick 50nm of reaching of siliceous and oxygen, coating is to exist gasiform to provide under the compound situation of electronics, in being coated on the glass surface with silane gas pyrolytic method more than 600 ℃, thereby the oxygen from glass forms transparent screen layer with silicon on glass surface, coat the blended metal oxide layer of the infrared external reflection of printing opacity again on screen layer.
Matrix as conductive metal oxide layer is used for more complicated system, for example is used for liquid crystal display device, is another the useful aspect that has applied the glass of screen layer.Such device can comprise two conductive layers vis-a-vis, and interlayer is placed with liquid crystal material, and on said each conductive layer one deck layer of compensation is arranged; Having a conductive layer at least is photic zone, and it is supported on the glass surface with screen layer between conductive layer and the glass.Under these circumstances; screen layer not only protects the metal oxide layer of conduction to make it directly not to be subjected to etch from the alkalimetal ion of glass, and prevented that the metal oxide layer of alkalimetal ion by conduction is diffused into to cause in the liquid crystal material and do not wish the electrochemical reaction that takes place.
Used glass is very thin in the liquid-crystal display, and its thickness generally is no more than 2mm, preferably less than 1.5mm.Therefore, the present invention provides following product innovation again:
Thickness has the transparent curtain coating of the siliceous and oxygen of the thick 50nm of reaching up to the glass of 2mm, this screen layer be provide under the situation that the compound of electronics exists at gasiform sedimentary with the method for pyrolysis silane gas, thereby on glass surface, form transparent screen layer from the oxygen of glass with silicon;
And
Liquid crystal display device, it comprises two relative conductive layers, interlayer has liquid crystal material, and the layer of compensation that on said each conductive layer, has one deck to contact with liquid crystal material, above to have one deck in the said conductive layer at least be to be supported on the following glass matrix of the thick 2mm of alkali metal containing ionic, and the transparent screen layer of the siliceous and oxygen of the thick 50nm of reaching arranged between said conductive layer and the glass, this transparent screen layer be under the situation that the compound that has gasiform to provide electronics exists, be deposited on the method for pyrolysis silane on glass, thereby on glass surface, form transparent screen layer from the oxygen of glass with silicon.
Transparent screen layer coated glass also can be as the transparent outer layer of unformed silicon solar cell, if the alkali ion movement on the glass outer surface of solar cell is in unformed then will reduce battery efficiency.
Screen layer coating of the present invention is efficiently in efficient aspect the control alkali ion movement.And because coating when very thin just effectively, so can be used as the screen layer coated glass of high visible transmittance.Because coating combines from the oxygen of glass, so the time do not need use strong oxidizing condition, therefore be applicable to floatation glass production line, when glass applies during by the used bath of production float glass in coating.
The transparent curtain coating with the ethene preparation that the present invention narrated has checked wherein whether there is the Si-H key with infrared spectrometer, but does not detect and the corresponding infrared absorption band of Si-H key.
Illustrate the present invention below, but the invention is not restricted to these examples.Except as otherwise noted, the envrionment conditions of gas volume is to be approximately equal to 20 ℃ and 1 normal atmosphere entirely.
Embodiment 1~4
When the thick float glass belt of 6mm during through the used bath of float glass, the direction that is parallel to glass surface described in british patent specification 1507996 under laminar flow condition is by 50 liters/minute the nitrogen mixture gas that contains single silane of 10 volume % and 90 volume % and 3 meters wide screen layers of method coating of 10 liters of/minute ethene.The temperature of coating position glass is 625 ℃, the annealing rate of glass ribbon be 370 meters/time.Increase the ethene flow velocity then and, apply screen layer under 40 and 50 liters/minute the ethene flow velocity 20,30.
The used ethene and the ratio of silane and the result that the coating of being produced is measured all list in the table 1 in the coating gas.
(table 1 is seen the literary composition back)
* use CIE lighting source C(CIE Illuminant Csource) impinge upon on that surface glass away from coating and measure.
Used ethene amount is about at 4: 1 o'clock up to the ratio of ethene and silane, and the luminous reflectance factor of gained coating reduces, light transmission rate increases sharply.The light transmission rate of goods then increased slower when the ratio of ethene and silane increased again.
The coating shielding can be measured with following method from the validity of the alkali ion movement of glass surface.
Cutting two respectively is 10cm
2The coated glass sample, the falope that is an internal diameter 8.5cm is placed between two samples and is clamped together to form cylindrical battery then, its wall is limited by the coatingsurface of glass and the internal surface of falope.Fill out in the battery by the hole on the rubber ring with deionized water, seal this hole and the battery of sealing was immersed in 96 ℃ the water-bath 48 hours.Take out solution and analyze sodium, measure the sodium that leaches and to expose to the Na of every square decimeter of glass in the electric pool inner water with the flame reflection spectrometry
2O milligram number is represented.
Also the surface that can buy many markets has SiO
2The soda lime glass of ion-screen layer is measured.Gained as a result its scope from 60mgNa
2O/dm
2To 1000mgNa
2O/dm
2More than.Also measured the glass of the common alkali-free that can buy on the market, its value is 13mgNa
2O/dm
2
Should see that compare with the common non-alkali glass that can buy on the market, coated glass used among the present invention has superiority, and believes, be equipped with coated glass with line foreign side legal system and be difficult for being adopted by coating on the float glass line.
The goods of embodiment 3 ESCA(Electron Spectroscopic Chemical Analysis) analyzes.In this technology, irradiation is carried out with the X-ray in the surface of desire analysis.Being present in lip-deep those elements characterizes with quantitative with the primary electron power spectrum that is gone out by surface excitation that detects.Remove the surface atom layer with the argon etch then so that expose inferior-upper layer atom, characterize with quantitative with aforesaid method again.Repeat to corrode with routine analyzer to be made in the distribution plan of forming above the depthmeter surface layer of coat-thickness.
Below the test result of the goods gained of embodiment 3 is listed in.
Etching time 0 300 600 900 1,200 1500
(second)
The atom 20 35 36 37 37 35 of silicon
Percentage ratio
The atom 31 45 39 35.5 37 43 of oxygen
Percentage ratio
The atom 45.5 17 22 24 20 15 of carbon
Percentage ratio
Find to contain silicon, oxygen and carbon in the coating.Coatingsurface place oxygen is bordering on 3: 2 with the ratio of silicon.Ratio was reduced to about 1: 1 after corroding for 900 seconds, increased again subsequently.The carbon concentration of surface is 45%, is about 20% via the change in concentration of coat-thickness.
Embodiment 5 and 6
The float glass belt of 2mm when its when the float glass process bath such as british patent specification 1,507, under laminar flow condition, be parallel to glass surface described in 996 and pass to single silane, nitrogen and mixture of ethylene so that be coated with the transparent screen layer that applies silicon and oxygen.The temperature of coating position glass be the annealing speed of 660 ℃ of glass ribbons be 1030 meters/time.
The character of gas velocity and resulting product is listed in table 2.
Make coating that good ion shielding property matter be arranged.Luminous reflectance factor is with ethene: the ratio of silane increases, and ratio is that 3.3: 1 o'clock its light transmission rates are 84.9%.Calculating points out, with the light percent of pass of the thick glass of the 1mm of coating not be 91.4% relatively, its light transmission rate of coated glass that similar 1mm is thick is 85.4%.
Embodiment 7~9
1.3mm when thick float glass belt passes through the float glass process bath when it,, described in 996, under laminar flow condition, be parallel to glass surface and pass to single silane, nitrogen and mixture of ethylene so that coat silicon and the screen layer of oxygen as british patent specification 1,507.The glass temperature of coating position is 640 ℃, the annealing speed of glass ribbon be 1200 meters/time.
After table 2,3,4 is seen literary composition
The character of gas velocity and resulting product is listed in the table 3.
Ion shielding character (when leaching flow measurement with alkalimetal ion) is outstanding like that although be not so good as previous embodiment, and is comparable with the characteristic of the glass that can buy on the market, can meet the demands to industrial application.Goods have high light transmission rate (about 90%).
Embodiment 10~13
Thick its static sample of float glass of 4mm in testing laboratory to contain nitrogen, the mixed coating gas that in nitrogen, accounts for the compound (EDC) that 10% single silane and gasiform the provide electronics method coating of hot glass surface of stimulating the menstrual flow.Composition, glass temperature and the depositing time of used coating gas and the performance one of coated glass goods are listed in the table 4.
Can see, provide the Clear coating that the compound of electronics replaces ethene to obtain with other gasiform and have similar ion screen layer character.Coating is transparent and contains silicon and from the oxygen of glass.
Embodiment 14~16
Thick its static sample of float glass of 4mm is stimulated the menstrual flow 630 ℃ hot glass surface through 10~40 seconds time method coatings with the mixed coating gas that contains 6.6 liters of/minute nitrogen, 0.4 liter/minute the single silane that accounts for 10 volume % in nitrogen and 0.4 liter of/minute ethene in testing laboratory.The performance of used time and gained coating is shown in Table 5.
The luminous reflectance factor of the coated glass of being seen increased with the coating time, and the coated products in 80 seconds looks and is similar to the resulting reflectance coating of the ethene of only using little example.
This a series of test shows, along with the increase coat-thickness increase of coating time, uses up time its transparency decline of institute's coating deposited from the oxygen of glass.It is believed that this is owing to deposited unoxidized silicon coating again on siliceous and initial Clear coating from the oxygen of glass.All coatings have all been measured the stability of anti-outside alkali etch with the method among 80 ℃ the 1NNaOH of being immersed in.After 50 minutes, all there is not visible etch sign in each case.
Embodiment 17~33
Thick its static sample of float glass of 4mm in testing laboratory in 630 ℃ down with the stimulate the menstrual flow method coating of hot glass surface of coating gas.The performance of the composition of used coating gas, coating time and coated products is shown in Table 6.The gasiform compound that provides electronics is transferred to the degree that can produce Clear coating with the ratio of silane in each case.
Table 5
Embodiment coating time light transmission rate * thickness
(second) be (nm) (%)
14 10 89.0 19
15 20 85.2 28
16 40 79.2 39
Relatively use 80 55.2 74
* measure on that surface glass with CIE lighting source C away from coating.
Embodiment 34
With being similar to the technology described in the embodiment 1~4, be that sample prepared under 5: 1 the situation and transparent float glass sample that 6mm of coating is not thick are complete in the doped tin oxide coatings of mixing fluorine at the ratio of ethene and silane.Difluoro tetrachloro stannic acid ammonium, (NH
4)
2SnCl
4F
2, grind to form granularity and be no more than 50 microns particle, be sprinkling upon in the airflow, the airflow that contains dispersed powders is directly blown on about 580 ℃ hot glass sample with the speed of every square metre of glass 80 grams.The thickness rice and the resistivity thereof of gained fluorine doped tin oxide coating have been measured.Below gained the results are shown in:
Tin oxide thickness (nm) is than resistance (ohm cm)
Be coated with the matrix 58 1.7 * 10 of screen layer
-3
The matrix 56 0.3 * 10 of coating not
-3
Owing to the resistivity of doped tin oxide layer is had injurious effects, illustrated that screen layer hinders the effect that alkalimetal ion moves from glass so be coated with the violent reduction of coating resistance rate on the matrix of screen layer from the alkalimetal ion of glass.
After table 6 is seen literary composition
Embodiment 35
Used for liquid crystal display device described herein has the glass of transparent screen layer to be made, and this transparent screen layer uses and carried out stable mensuration as being actually as described in the embodiment 8 as matrix.Find that its life-span was above 1000 hours under 60 ℃ and relative humidity 95% condition.
It is following data 60 ℃ of following vapour pressures that the compound that used all provide electronics among the embodiment removes following compound:
Virahol 40KPa
Dimethylbenzene 8KPa
Water 20KPa
In addition, remaining 60 ℃ of following vapour pressures all more than 760mm.
Table 1
Embodiment ethene/silane coating thickness light transmission rate * luminous reflectance factor * basic metal from
(mole ratio) be (%) (%) sub-leaching amount (nm)
(mg/dm
2)
Relatively use 2 50 67.3 24.5 9
1 4 50 81.3 12.6 18
2 6 32 82.5 11.0 22
3 8 30 83.0 9.5 26
4 10 17 84.4 8.9 26
Table 2
Silane in the nitrogen
Silane ethene flow velocity in the nitrogen (liter/ethene: silane basic metal from
Flow velocity light transmission rate luminous reflectance factor
The sub-leaching amount of mole ratio of concentration branch/rice of embodiment
(volume %) glass width) value (mg/dm
2)
The glass width)
5 15 30 10 2.2∶1 76.5 18.5 4
6 15 30 15 3.3∶1 84.9 12.5 18
* impinge upon on that surface glass away from coating with CIE lighting source C and measure.
But f reference example 1~4 described method is measured.
Table 3
Silane in the nitrogen
Silane ethene flow velocity in the nitrogen (liter/ethene: silane basic metal from
Flow velocity light transmission rate luminous reflectance factor
The sub-leaching amount of the mole ratio of embodiment concentration branch/rice
+
(volume %) glass width) value (mg/dm
2)
The glass width)
7 15 40 20 3.3∶1 89.7 8.8 50
8 15 30 15 3.3∶1 90.1 8.7 86
9 15 30 23 5∶1 90.7 8.2 400
Table 4
Gas velocity (rise/minute) basic metal from
DEC glass surface depositing time
The sub-leaching amount of embodiment E DC light transmission rate
+
N
210%SiH
4/ N
2EDC silane ratio temperature ℃ (second) (mg/dm
2)
* impinge upon on that surface glass away from coating with CIE lighting source C and measure.
But+reference example 1~4 described method is measured.
Table 6
Gas flow rate (rise/minute) EDC: the silane alkalimetal ion
Coating time light transmission thickness alkali resistant is steady
The mole ratio leaching amount of embodiment E DC
+
(second) rate * % (nm) is qualitative
10% SiH in the nitrogen
4EDC N
2(mg/dm
2)
17 carbonic acid gas 0.40 0.40 6.6 10 10 88.4--poor
18 carbonic acid gas 0.40 0.12 6.8 3 13 85.0 35 40 are poor
19 dimethyl esters 0.35 0.56 6.5 16 11 88.9 39 26 are good
20 iso-butylenes 0.36 0.24 6.8 6.7 11 89.4 19 18-
21 carbon monoxide 0.34 0.50 6.6 14.7 12 87.0 25 36 are poor
22 dimethylamine 0.40 0.30 6.7 7.5 12 89.4 25 84-
23 acetone 0.38 0.06 6.8 1.6 12 89.6 14--
24 acetone 0.11 0.022 7.0 2 90 90.5 20 35-
25 ammonia 0.35 0.35 6.7 10 12 89.0 22-good
26 ammonia 0.11 0.06 6.5 5.5 70 86.0-18 are good
27 Virahols 0.38 0.013 6.8 0.3 12 79.5 28 40 are good
28 acetaldehyde 0.38 0.025 6.9 0.7 12 88.6 21 36 are good
29 water 0.11 0.004 6.6 0.4 60 86.0 30 181 are poor
30 nitrogen oxides 0.40 0.10 6.9 2.5 11 90.5 40 40 are good
31 Nitrous Oxides 0.75 0.15 6.5 2.0 7 89.0 30 13 are poor
32 oxyethane 0.20 0.08 6.5 4.0 40 91.0 45 13-
33 nitrogen peroxide 0.40 0.11 6.9 2.7 12 88.5 40 40 are poor
* impinge upon on that surface glass away from coating with CIE lighting source C and measure.
*+reference example 1~4 described method mensuration.
Claims (17)
1, a kind of alkalimetal ion that reduces the glass of self-contained alkalimetal ion is diffused into the method in the tectum, this method is included in the transparent screen layer that the siliceous and oxygen of one deck is provided between glass and the tectum, apply with pyrolysis silane gas, the pyrolysis that it is characterized in that silane be at 600 to 750 ℃ temperature range, at a gaseous state on glass surface, carrying out in the presence of the electron compound; With the ratio of silane the oxygen in the glass is combined for silane electron compound, reach the thick transparent curtain coating of 50nm in formation on glass.
2, in accordance with the method for claim 1, it is characterized in that used silane gas is single silane (SiH
4).
3, in accordance with the method for claim 1, it is characterized in that silane gas inert gas dilution.
4, in accordance with the method for claim 1, it is characterized in that the used compound of giving electronics is a non-oxygen compound.
5, in accordance with the method for claim 4, it is characterized in that gaseous state is the alkene that contains 2-4 carbon atom to electron compound.
6, in accordance with the method for claim 5, it is characterized in that gasiform is an ethene to electron compound.
7,, it is characterized in that it is 0.5: 15: 1 that gaseous state is given the compound of electronics and the volume ratio of silane according to any one the described method among the claim 1-6.
8,, it is characterized in that transparent screen layer is coated in thickness and is not more than the on glass of 2mm according to any one the described method among the claim 1-6.
9, according to any one the described method among the claim 1-6, it is characterized in that screen layer is coated on the float glass belt, this glass ribbon on the molten metal bath by the time carry out.
10,, it is characterized in that the layer of alkalimetal ion diffusion-sensitive is carried out to the lip-deep method of coated glass with sputter, chemical vapour deposition or with spraying liquid state or solid-state reactants according to any one the described method among the claim 1-6.
11, in accordance with the method for claim 10, it is characterized in that said coating is adulterated metal oxide photic zone.
12, thickness reaches the glass of 2mm, it is characterized in that siliceous and thickness oxygen of the method coating that useful claim 1 limited on it can reach the transparent screen layer of 50mm.
13,, it is characterized in that used gaseous state is a non-oxygen compound to electron compound according to the described glass of claim 12.
14,, it is characterized in that gaseous state is the alkene that contains 2-4 carbon atom to electron compound according to claim 12 or 13 described glass.
15,, it is characterized in that gaseous state is an ethene to electron compound according to the described glass of claim 14.
16,, it is characterized in that on screen layer, also comprising conductive metal oxide layer that its resistivity is less than 500 ohm according to the described glass of claim 12.
17,, it is characterized in that on screen layer, also comprising the infrared reflecting layer of the blended metal oxide of printing opacity according to the described glass of claim 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85106620 CN1026779C (en) | 1984-08-13 | 1985-09-02 | Method for reducing diffusion of alkali metal ions in glass and products made thereby |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB848420534A GB8420534D0 (en) | 1984-08-13 | 1984-08-13 | Coated products |
| CN 85106620 CN1026779C (en) | 1984-08-13 | 1985-09-02 | Method for reducing diffusion of alkali metal ions in glass and products made thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85106620A CN85106620A (en) | 1987-03-25 |
| CN1026779C true CN1026779C (en) | 1994-11-30 |
Family
ID=25742015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85106620 Expired - Fee Related CN1026779C (en) | 1984-08-13 | 1985-09-02 | Method for reducing diffusion of alkali metal ions in glass and products made thereby |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1026779C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102584023A (en) * | 2012-02-22 | 2012-07-18 | 株洲旗滨集团股份有限公司 | Solar control coated glass preparation method and glass thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051534C (en) * | 1994-11-22 | 2000-04-19 | 秦皇岛开发区蓝光玻璃新技术公司 | Float process for on-line production of coated glass |
| CN104124133B (en) * | 2013-04-24 | 2017-10-10 | 上海和辉光电有限公司 | A kind of method that cushion is manufactured in LTPS products |
-
1985
- 1985-09-02 CN CN 85106620 patent/CN1026779C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102584023A (en) * | 2012-02-22 | 2012-07-18 | 株洲旗滨集团股份有限公司 | Solar control coated glass preparation method and glass thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN85106620A (en) | 1987-03-25 |
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