CN102603303A - Reactive sintering silicon carbide and preparation process thereof - Google Patents
Reactive sintering silicon carbide and preparation process thereof Download PDFInfo
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- CN102603303A CN102603303A CN2012100869287A CN201210086928A CN102603303A CN 102603303 A CN102603303 A CN 102603303A CN 2012100869287 A CN2012100869287 A CN 2012100869287A CN 201210086928 A CN201210086928 A CN 201210086928A CN 102603303 A CN102603303 A CN 102603303A
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- Prior art keywords
- silicon carbide
- hours
- sintered
- temperature
- silit
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 34
- 238000005245 sintering Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 6
- 239000010439 graphite Substances 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000748 compression moulding Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000006835 compression Effects 0.000 abstract description 11
- 238000007906 compression Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000003825 pressing Methods 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000750 progressive effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
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- Ceramic Products (AREA)
Abstract
The invention relates to a reactive sintering silicon carbide comprising the following components by weight: 3-7% of graphite, 75-85% of silicon carbide and the balance of resin. The invention relates to a preparation process for processing the reactive sintering silicon carbide. The preparation process comprises the following steps: placing the raw material of each component in a stirring mill for stirring about 2 to 8 hours; then pressing the stirred raw materials for molding at the pressure of 1.4T per square meter in a pressing machine; preserving the temperature for 5 hours at the temperature of 220 DEG C in an oven; sintering the raw materials by utilizing a sintering furnace after drying; rising the temperature to 1300 DEG C at a speed of 5 DEG C rise per minute; then rising the temperature to 1650 DEG C at the speed of 4 DEG C rise per minute; preserving the temperature for 8 hours; and naturally cooling the raw materials. The current density of the reactive sintering silicon carbide can reach about 3.10g/cm<3>, and the hardness can reach about 92HRA. Compared with a product in the background technology, the reactive sintering silicon carbide has significant progress, high product density, good strength and better wear-resisting property as the density, the hardness and the compression strength are all improved.
Description
Technical field
The present invention relates to a kind of silit, especially a kind of silicon carbide reaction-sintered and manufacture craft thereof.
Background technology
Silit is because stable chemical performance, thermal conductivity are high, thermal expansivity is little, wear resisting property good; Except that making abrasive material usefulness; Also have a lot of other purposes; For example: coat the inwall of turbine impeller or cylinder body to silicon carbide powder with special process, can improve its wear resistance and increase the service life 1～2 times; In order to the high grade refractory of processing, heat-resisting shake, volume is little, in light weight and intensity is high, good energy-conserving effect.Low grade silit (containing SiC about 85%) is fabulous reductor, can accelerate steel-making speed with it, and be convenient to control chemical ingredients, improves the quality of steel.In addition, silit also is used to make the electrical heating element globars in a large number.The hardness of silit is very big, has good heat conductivility, is a kind of semi-conductor, can be anti-oxidant during high temperature.
Because various needs like every field such as machinery, chemical industry, oil, pharmacy, field of aerospace even bulletproof armours, need use sintered silicon carbon, existing sintering manufacture craft comprises normal pressure-sintered and reaction sintering.It is high than silicon carbide reaction-sintered that constant pressure sintering silicon carbide prepares difficulty, so cost is also high.The existing constant pressure sintering silicon carbide product density of existing reaction is 3.03g/cm
3About, hardness is about 90HRA, ultimate compression strength is 2050MPa
About, its density is not high, and hardness, ultimate compression strength are not enough, and wear resistance is also bad.
Summary of the invention
The problem that the present invention will solve is that to improve the product density of silicon carbide reaction-sintered in the background technology not high, causes its insufficient strength, the problem that wear resistance is bad.
In order to overcome the above problems, the present invention provides a kind of silicon carbide reaction-sintered, comprises following component and each component concentration (by mass percentage) as follows: 3～7% graphite, and 75～85% silit, surplus is a resin.
Said resin water soluble.
Said silit is made up of 800 orders and two kinds of specifications of 1200 purposes, and wherein mass ratio is 1:3 between 800 orders and the 1200 purpose silit.
A kind of manufacture craft of processing the said silicon carbide reaction-sintered of claim 1 places the raw material of individual component in the stirrer, stirs 2 to 8 hours, then the raw material that stirs is passed through press; With the pressure of every square meter 1.4T, baking oven is passed through in compression moulding again, 220 degree; Be incubated 5 hours, after the oven dry, use sintering oven to carry out sintering, the speed of spending with PM intensification 5 is warmed up to 1300 ℃; Speed with 4 ℃ of PM intensifications is warmed up to 1650 ℃ again, is incubated 8 hours, naturally cooling.
Silicon carbide reaction-sintered of the present invention and manufacture craft thereof because readjusted the ratio of prescription, have increased carbon content; And the adjustment sintered heat insulating time; Make when making agglomerating in the powder carbon can better and pasc reaction, generate silit, effectively reduce the contents of free si in the goods; Improve product density, make product have more wear resistance.Silicon carbide reaction-sintered of the present invention, density can reach 3.10 g/cm now
3About, hardness can reach about 92HRA, and ultimate compression strength is about 2320 Mpa.Product in the relative background technology has progressive significantly, and silicon carbide reaction-sintered product density of the present invention is high, and intensity is good, owing to density, hardness, ultimate compression strength have all improved, so its wear resisting property is also better.
Embodiment
Embodiment one: the silicon carbide reaction-sintered of present embodiment comprises following component and each component concentration (by mass percentage) as follows: 3% graphite, and 85% silit, surplus is a resin.
In the present embodiment, said resin water soluble.Said silit is made up of 800 orders and two kinds of specifications of 1200 purposes, and wherein mass ratio is 1:3 between 800 orders and the 1200 purpose silit.
The silicon carbide reaction-sintered of present embodiment is made by following technology: the raw material of individual component is placed in the stirrer, stirred 2 hours, then the raw material that stirs is passed through press, with the pressure of every square meter 1.4T; Baking oven is passed through in compression moulding again, 220 ℃, is incubated 5 hours; After the oven dry, use sintering oven to carry out sintering, be warmed up to 1300 ℃ with heat up 5 ℃ speed of PM; Speed with 4 ℃ of PM intensifications is warmed up to 1650 ℃ again, is incubated 8 hours, naturally cooling.
Silicon carbide reaction-sintered of the present invention and manufacture craft thereof have following advantage: density is 3.08 g/cm now
3, hardness is 90HRA, ultimate compression strength is 2310 Mpa.Product in the relative background technology has progressive significantly, and silicon carbide reaction-sintered product density of the present invention is high, and intensity is good, owing to density, hardness, ultimate compression strength have all improved, so its wear resisting property is also better.
Embodiment two: the silicon carbide reaction-sintered of present embodiment comprises following component and each component concentration (by mass percentage) as follows: 7% graphite, and 75% silit, surplus is a resin.Its manufacture craft and embodiment one are similar, do not do too much description at this.
In the present embodiment, said resin water soluble.Said silit is made up of 800 orders and two kinds of specifications of 1200 purposes, and wherein mass ratio is 1:2.8 between 800 orders and the 1200 purpose silit.
The silicon carbide reaction-sintered of present embodiment is made by following technology: the raw material of individual component is placed in the stirrer, stirred 4 hours, then the raw material that stirs is passed through press, with the pressure of every square meter 1.4T; Baking oven is passed through in compression moulding again, 220 ℃, is incubated 5 hours; After the oven dry, use sintering oven to carry out sintering, be warmed up to 1300 ℃ with heat up 5 ℃ speed of PM; Speed with 4 ℃ of PM intensifications is warmed up to 1650 ℃ again, is incubated 8 hours, naturally cooling.
Silicon carbide reaction-sintered of the present invention and manufacture craft thereof have following advantage: density is 3.10 g/cm now
3, hardness is 92HRA, ultimate compression strength is 2320 Mpa.Product in the relative background technology has progressive significantly, and silicon carbide reaction-sintered product density of the present invention is high, and intensity is good, owing to density, hardness, ultimate compression strength have all improved, so its wear resisting property is also better.
Embodiment three: the silicon carbide reaction-sintered of present embodiment comprises following component and each component concentration (by mass percentage) as follows: 5% graphite, and 80% silit, surplus is a resin.
In the present embodiment, said resin water soluble.Said silit is made up of 800 orders and two kinds of specifications of 1200 purposes, and wherein mass ratio is 1:3.2 between 800 orders and the 1200 purpose silit.
The silicon carbide reaction-sintered of present embodiment is made by following technology: the raw material of individual component is placed in the stirrer, stirred 8 hours, then the raw material that stirs is passed through press, with the pressure of every square meter 1.4T; Baking oven is passed through in compression moulding again, 220 ℃, is incubated 5 hours; After the oven dry, use sintering oven to carry out sintering, be warmed up to 1300 ℃ with heat up 5 ℃ speed of PM; Speed with 4 ℃ of PM intensifications is warmed up to 1650 ℃ again, is incubated 8 hours, naturally cooling.
Silicon carbide reaction-sintered of the present invention and manufacture craft thereof have following advantage: density is 3.12 g/cm now
3, hardness is 94HRA, ultimate compression strength is 2330 Mpa.Product in the relative background technology has progressive significantly, and silicon carbide reaction-sintered product density of the present invention is high, and intensity is good, owing to density, hardness, ultimate compression strength have all improved, so its wear resisting property is also better.
The invention is not restricted to above embodiment and conversion.
Claims (4)
1. silicon carbide reaction-sintered is characterized in that: comprise following component and each component concentration (by mass percentage) as follows: 3～7% graphite, and 75～85% silit, surplus is a resin.
2. a kind of silicon carbide reaction-sintered according to claim 1 is characterized in that: said resin water soluble.
3. a kind of silicon carbide reaction-sintered according to claim 1 is characterized in that: said silit is made up of 800 orders and two kinds of specifications of 1200 purposes, and wherein mass ratio is 1:3 between 800 orders and the 1200 purpose silit.
4. a manufacture craft of processing the said silicon carbide reaction-sintered of claim 1 is characterized in that: the raw material of individual component is placed in the stirrer, stirred 2 to 8 hours, then the raw material that stirs is passed through press; With the pressure of every square meter 1.4T, baking oven is passed through in compression moulding again, 220 ℃; Be incubated 5 hours, after the oven dry, use sintering oven to carry out sintering, be warmed up to 1300 ℃ with heat up 5 ℃ speed of PM; Speed with 4 ℃ of PM intensifications is warmed up to 1650 ℃ again, is incubated 8 hours, naturally cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100869287A CN102603303A (en) | 2012-03-29 | 2012-03-29 | Reactive sintering silicon carbide and preparation process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100869287A CN102603303A (en) | 2012-03-29 | 2012-03-29 | Reactive sintering silicon carbide and preparation process thereof |
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| CN102603303A true CN102603303A (en) | 2012-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100869287A Pending CN102603303A (en) | 2012-03-29 | 2012-03-29 | Reactive sintering silicon carbide and preparation process thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111269016A (en) * | 2020-02-26 | 2020-06-12 | 上海德宝密封件有限公司 | Silicon carbide product sintering method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976429A (en) * | 1993-02-10 | 1999-11-02 | The Morgan Crucible Company, Plc | Process for producing dense, self-sintered silicon carbide/carbon-graphite composites |
| CN101747068A (en) * | 2009-12-24 | 2010-06-23 | 中钢集团洛阳耐火材料研究院有限公司 | Self-bonding SiC product with content of SiC more than 92 percent and preparation method thereof |
| CN101967059A (en) * | 2010-09-17 | 2011-02-09 | 西安交通大学 | Method for preparing silicon carbide bullet-proof ceramics |
-
2012
- 2012-03-29 CN CN2012100869287A patent/CN102603303A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976429A (en) * | 1993-02-10 | 1999-11-02 | The Morgan Crucible Company, Plc | Process for producing dense, self-sintered silicon carbide/carbon-graphite composites |
| CN101747068A (en) * | 2009-12-24 | 2010-06-23 | 中钢集团洛阳耐火材料研究院有限公司 | Self-bonding SiC product with content of SiC more than 92 percent and preparation method thereof |
| CN101967059A (en) * | 2010-09-17 | 2011-02-09 | 西安交通大学 | Method for preparing silicon carbide bullet-proof ceramics |
Non-Patent Citations (2)
| Title |
|---|
| 《陶瓷科学与艺术》 20031231 李媛 等 反应烧结用碳化硅/酚醛树脂混合物成型特性研究 第33-36页 4 , 第6期 * |
| 李媛 等: "反应烧结用碳化硅/酚醛树脂混合物成型特性研究", 《陶瓷科学与艺术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111269016A (en) * | 2020-02-26 | 2020-06-12 | 上海德宝密封件有限公司 | Silicon carbide product sintering method |
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Application publication date: 20120725 |
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