CN102569563A - Wafer level packaging method of light emitting diode with adjustable lens focus - Google Patents
Wafer level packaging method of light emitting diode with adjustable lens focus Download PDFInfo
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- CN102569563A CN102569563A CN2012100189438A CN201210018943A CN102569563A CN 102569563 A CN102569563 A CN 102569563A CN 2012100189438 A CN2012100189438 A CN 2012100189438A CN 201210018943 A CN201210018943 A CN 201210018943A CN 102569563 A CN102569563 A CN 102569563A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 17
- 238000011049 filling Methods 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims description 37
- 238000005538 encapsulation Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 239000000741 silica gel Substances 0.000 claims description 23
- 229910002027 silica gel Inorganic materials 0.000 claims description 23
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 16
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 13
- 239000005297 pyrex Substances 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 238000010943 off-gassing Methods 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 55
- 238000005516 engineering process Methods 0.000 description 9
- 238000000465 moulding Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000003856 thermoforming Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 241000299354 Acalles micros Species 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- -1 titanium hydride Chemical compound 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention discloses a wafer level packaging method of a light emitting diode with an adjustable lens focus. The method comprises the following steps: in a first step, etching a light emitting diode lens mould microchannel array and a spacing control mould microchannel array surrounding a light emitting diode lens mould groove on a silicon wafer, and disposing proper amount of thermal outgassing agents in a light emitting diode lens mould microchannel; in a second step, carrying out anode bonding of the silicon wafer and a borosilicate glass water in vacuum to form a sealed cavity; in a third step, carrying out heating and heat preservation on a bonding wafer in the air, forming a spherical glass micro-cavity and a spacing control projection ring, carrying out cooling and annealing, and removing silicon to obtain a light emitting diode packaging lens array; in a fourth step, pasting a light emitting diode chip on a substrate; in a fifth step, bonding a wafer level glass micro-cavity and the substrate; in a sixth step, filling up glue into a gap between a light emitting diode chip and the wafer level glass micro-cavity through a spacing control ring gap, and carrying out solidification. The method can be carried out on a wafer level, and the method has the advantages of simplicity and low cost.
Description
Technical field
The present invention relates to a kind of MEMS (microelectromechanical systems) encapsulation technology, relate in particular to the wafer-level encapsulation method of the adjustable light-emitting diode of a kind of lens focus.
Background technology
As lighting use; Powerful white light emitting diode (LED) is by scientific research and enterprise's extensive concern; Because light-emitting diode (LED) is in order to produce enough light intensity; Operating current will be tried one's best greatly, and operating current has brought stern challenge for greatly the heat dissipation problem of light-emitting diode (LED) encapsulation.So; Optical package structure through design white light emitting diode (LED); Improve its light emission rate; Can under certain electric current, obtain enough big light intensity, lens can be used to improve the collimation of light beam simultaneously, so must be useful on the lens that improve light emission rate in light-emitting diode (LED) encapsulating structure.The package lens structure will have good air-tightness simultaneously, because the chip affected by moisture can influence luminescent properties greatly.
The lens of encapsulation LED (LED) converge with beam collimation most important to emergent ray.The lens of present most of led chips are to process through a glue and plastic housing.The lens that wafer level prepares the LED encapsulation can save time, and reduce manufacturing cost.In the optical design of LED lens, led chip is most important to the bright dipping that encapsulates the back led chip with respect to the position (relative position of light source and lens focus) of lens, is a great problem in encapsulation light path design and the manufacturing.
Summary of the invention
The wafer-level encapsulation method that the purpose of this invention is to provide the adjustable light-emitting diode of a kind of process is simple, cost is low lens focus.
The present invention adopts following technical scheme: the wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable may further comprise the steps:
The first step; Etching and light emitting diode matrix corresponding led lens mould micro slot array and on silicon wafer around the spacing of led lens mold slots control mould micro slot array; Led lens mould microflute is not communicated with spacing control mould microflute, places an amount of hot bubble release agent at led lens mould microflute;
Second step is with the silicon wafer after the etching and Pyrex disk anode linkage in a vacuum, formation seal chamber;
In the 3rd step, the disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air, and is incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute form spherical glass micro-cavity, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute and is formed spacing control protruding ring, is cooled to normal temperature; Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit is mounted preparation to be had on the substrate of silicon conductive through hole and reflector;
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd;
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED;
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
In the technique scheme, hot bubble release agent is a calcium carbonate powder.Be connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Be communicated with respectively between the spacing control mould micro slot array, make diode lens mould microflute be in connection spacing control mould micro slot array around among.Be connected through fluid channel between the said led lens mould microflute, diode lens mould microflute compares greater than 3:1 with the width of fluid channel, and spacing control mould micro slot array is in around the outside part of diode lens mould micro slot array and is communicated with.Said first step silicon wafer etching technics is a wet etching, and the degree of depth is the 20-100 micron.Said Pyrex are Pyrex7740 glass, and the condition of said anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing are described in the 3rd step: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on the substrate (9) through the SMT technology.Glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
The present invention obtains following effect:
1. form mutual disconnected led lens mould microflute and spacing control mould microflute through etching among the present invention; And optionally in led lens mould microflute, place the high temperature bubble release agent; Carry out in a vacuum then that anode is strong to be closed; Make it possible to utilize simultaneously malleation and negative pressure method on same glass wafer, to prepare spherical glass micro-cavity and spacing control protruding ring structure, thereby form the lens of the whole wafer level light-emitting diode of lens focus adjustable positions.This method can accurately be controlled the distance between led chip and the chip through the height of projection among the present invention, thereby can carry out flexible design according to the needs of optical design.The height of projection can be through silicon chip erosion degree of depth accurate and adjustable (can through the microelectronics dry method or cheaply wet etching realize), thereby realize the characteristic of LED lens focus position accurate and adjustable.It has not only increased the window of LED optical design, has improved the optical property that goes out of LED, and has increased the flexibility of encapsulation.
2. the present invention is through being connected through fluid channel between the led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Be communicated with respectively between the spacing control mould micro slot array, make diode lens mould microflute be in connection spacing control mould micro slot array around among, these technical measures; Realize the wafer level packaging of LED, and can realize the wafer level encapsulating.LED is in series through spacing control ring breach on silicon wafer; Projection on the prepared glass wafer is around led chip; Therefore after glass wafer and substrate silicon disk bonding; Can in passage, fill organic resin through one of them spacing control ring breach, another spacing control ring breach is used to get rid of gas, realizes no empty wafer level filling glue.It is simple to have method, the characteristics that cost is low.The width of spacing control ring breach is much larger than the size of the fluid channel between the diode lens, so the glueing channel size is bigger, and the encapsulating process can be carried out on disk easily, is not easy to stop up.Diode lens mould microflute compares greater than 3:1 with the width of fluid channel, makes diode lens glass forming process be more prone to; The size of fluid channel can the oversize LED of influence optical property owing to bearing bigger capillary inhibition; But can play the effect that connects LED lens glass chamber; Gas when making moulding in the lens glass chamber is communicated with, pressure is even, thereby spherical glass micro-cavity that can the compact dimensions high conformity.
3. the present invention is through with being connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Being in of spacing control mould micro slot array around the outside partially communicating measure of diode lens mould micro slot array; Make the spacing control ring join together, but inside but is not communicated with in lens periphery.Join together and spacing control ring outside forms the scheme surround to the LED spherical glass micro-cavity with respect to spacing control ring inside, can make in the process of encapsulating rapider, but its shortcoming is: if control the speed of bad encapsulating, form bubble easily.
4. the encapsulating structure skin of light-emitting diode (LED) chip is not epoxy resin or silica gel among the present invention; But the lens microcavity that has adopted Pyrex glass to make encapsulates; Because the Pyrex glassy phase, has good same photosensitiveness, high-temperature stability and sealing than organic material.The beam projecting rate of light-emitting diode (LED) chip of use glass lens microcavity encapsulation is higher like this, and operating current is bigger, and high-temperature resistance is strong, is difficult for
Aging, anti-moisture has been realized the more large-power light-emitting diodes of reliable and stable (LED) encapsulation.
5. glass lens encapsulation LED (LED) chip that use goes out among the present invention, glass lens be
Blow afloat wafer-level glass ball chamber under the effect of microcavity external and internal pressure; Smooth surface; Pyrex glass is for the percent of pass very high (> 90% of visible light simultaneously), so glass lens has very high beam projecting rate, and lens have the effect that focuses on visible light; The light beam visual angle of outgoing is less, can realize the collimation of light beam.Among the present invention with led chip use conductive silver glue with chip attachment on the TSV silicon substrate, in pasting chip, realized the electric interconnects of chip positive electrode like this.
Among the present invention based on the traditional MEMS processing technology; At first on the Si sheet, process microcavity and the fluid channel shallow slot structure of desiring moulding, specific regional filled high-temperature bubble release agent covers Pyrex7740 glass with anode linkage technology and forms airtight microcavity on this shallow slot; Heating makes glass melt then; The high temperature bubble release agent discharges gas, and gas is transferred in each microcavity through fluid channel, and chamber external and internal pressure official post gets melten glass and forms spherical microcavity of glass or glass micro-channel.According to the requirement of preparation microcavity and fluid channel, adjust the size ratio of microcavity and fluid channel, when microcavity and fluid channel size near the time; The suffered surface tension of microcavity and fluid channel is approaching during thermoforming; Moulding is highly approaching, and when microcavity size during much larger than fluid channel, the suffered surface tension of glass micro-channel is much larger than microcavity during thermoforming; Glass micro-channel is difficult to the cylindrical fluid channel of moulding; So can control their height through the size of control microcavity and fluid channel, highly lower after fluid channel is shaped, satisfying does not influence LED packaged glass lens performance when trickling silica gel.Because the glass channel and the microcavity surface of blowing are very smooth, so resistance is very little when injection is mixed with the silica gel of fluorescent material, can more smoothly silica gel be filled with whole wafer.Adopting the high temperature bubble release agent to release provides source of the gas to be used for spherical microcavity of formed glass and glass micro-channel, and it is low to have a cost, and method is simple, and moulding is highly high, the characteristics of good sphericity.
7. use the injection pusher of point gum machine among the present invention, because the adjustable in pressure of some glue can be regulated injection pressure and injection rate according to the injection process needs as phosphor powder layer silica gel.Here the silica gel that injects evenly is mixed with certain density fluorescent material, and after using point gum machine that silica gel is injected the cavity of wafer level, silica gel (phosphor powder layer) flows into each LED package cavity through fluid channel, can realize white light LEDs.The wafer level phosphor powder layer of having realized LED by this method applies, and has realized wafer level packaging simultaneously.
8. the temperature of anode linkage is 400 degrees centigrade usually; Thereby its normal temperature is 673K, and forming temperature is 850 deg.c, and normal temperature is about 1123K; The influence of the additional pressure that produces according to PV=nRT and surface tension; According to prior art, if the amount of gas is constant, volume after the expansion is not enough original two
Doubly, this shows the groove that needs etching darker.And the present invention has effectively solved this problem through introducing the high temperature bubble release agent, has avoided the complex process that groove brought and the expensive problem of high energy of etching high-aspect-ratio, can satisfy the requirement of led chip package cavity size.
9. be carved with the silicon chip of microflute and the anode linkage of glass among the present invention and have very high intensity, the characteristics of good leak tightness are difficult for the generation leakage and cause the moulding failure in heating process.400 ℃ of temperature, under the bonding conditions of voltage direct current 600V, anode linkage can reach better sealing effectiveness.
10. in the 5th step; Adopt single channel to inject the method for silica gel; Can the gas in package cavity and the fluid channel be driven away fully and package cavity; Make the silica gel that is mixed with fluorescent material be full of the space between led chip and the glass micro-cavity fully, avoided the refracting interface that causes owing to the air gap, improved the light extraction efficiency of chip.
11. the annealing process that adopts among the present invention can effectively be eliminated Pyrex7740 glass and bear the stress that forms in the high temperature malleation forming process, thereby makes its strength and toughness higher.Annealing temperature is that temperature retention time is 30min in 550 ℃～570 ℃ scopes, slow then cool to room temperature.Under this condition, anneal; The stress of can effectively decorporating; Can also make the shape of microcavity not have change basically, and the too high encapsulation that is prone to cause the microcavity shape to change and is unfavorable for the road, back of annealing temperature, low excessively annealing temperature then can't effectively be removed the glass internal stress.
12. adopting concentration among the present invention is the silicon mould on 25% the TMAH solution removal glass lens microcavity, can remove silicon chip effectively like this and etching glass not, selects silicon chip, glass ratio to be about 2900:1.
13. the present invention prepares the Pyrex7740 glass suitable with the thermal coefficient of expansion of Si as the glass lens micro-cavity structure, because the coupling of the heat between silicon and the glass is fine, therefore encapsulates very little for the stress influence of light-emitting diode (LED).
Realize wafer-level glass ball chamber packaging body and the silicon wafer bonding that is loaded with light-emitting diode chip for backlight unit 14. use low temperature glass solder bonding or metal bonding or binding agent bonding among the present invention.
In MEMS manufacturing technology field; Use the MEMS micro-processing technology can on silicon chip, closely process circular microflute; Use Pyrex7740 glass (a kind of glass that contains alkali ion, Pyrex are the product brands of Corning company) under vacuum condition, to carry out bonding with the silicon chip that is carved with microflute (placing hot bubble release agent in the groove) then and realize sealing, heating and melting prepares glass lens; Because positive pressure; Discharge gas in the microcavity,, so just can prepare the good glass lens of light transmittance outside the chamber so glass lens is blown afloat; Flow in the groove at the suction function lower-glass simultaneously, form spacing control projection ring.Use glass lens can avoid above problem effectively, glass has very high percent of pass as inorganic material to visible light, and thermal stability is fine, can ageing failure, and humidity resistance is excellent.Because the passage that constitutes through the projection ring of connecting guides the silica gel that is mixed with fluorescent material to inject successively in the package cavity of led chip; The wafer level of having realized the white light LED fluorescent powder layer applies; Accomplished the LED wafer level packaging simultaneously; Compare existing some glue monolithic method for packing, improved efficient greatly and reduced cost.
Description of drawings
Fig. 1 is the schematic top plan view of silicon wafer microflute and fluid channel (5:1)
Fig. 2 is the cross sectional representation after silicon wafer microflute and the runner thermoforming
Fig. 3 is the cross sectional representation of the glass wafer behind the removal silicon mould
Fig. 4 injects the cross sectional representation behind the silica gel for wafer-stage glass micro-cavity.
Embodiment
Embodiment 1The wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable may further comprise the steps:
The first step; Etching and light emitting diode matrix corresponding led lens mould micro slot array and on silicon wafer around the spacing of led lens mold slots control mould micro slot array; Led lens mould microflute is not communicated with spacing control mould microflute, places an amount of hot bubble release agent at led lens mould microflute; Lithographic method can adopt dry method or wet etching, can adopt 4 inches silicon chips, and hot bubble release agent can adopt calcium carbonate or titanium hydride powders, and the weighing of powder is as the criterion with the gas flow of the glass micro-cavity volume needs of moulding required size,
Second step is with the silicon wafer after the etching and Pyrex disk anode linkage in a vacuum, formation seal chamber; Vacuum degree can adopt the vacuum less than 1Pa, 0.01Pa for example, and 0.001Pa, 0.0001Pa,
In the 3rd step, the disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air, and is incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute form spherical glass micro-cavity, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute and is formed spacing control protruding ring, is cooled to normal temperature (for example 25 degrees centigrade); Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit is mounted preparation to be had on the substrate of silicon conductive through hole and reflector; The position of silicon conductive through hole is corresponding with the assembling position of light-emitting diode, can be on silicon the etching microcavity, and carry out interconnectedly at its bottom preparation silicon through hole, reflective quilt can use commercial reflector, also can inner sputtered aluminum form reflector in the silicon chamber,
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd; Bonding can adopt epoxy resin, also can adopt silica gel to carry out the wafer level bonding,
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED; Glue can adopt the commercial silica gel of refractive index match,
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
In the technique scheme, hot bubble release agent is a calcium carbonate powder.Be connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Be communicated with respectively between the spacing control mould micro slot array, make diode lens mould microflute be in connection spacing control mould micro slot array around among.Said first step silicon wafer etching technics is a wet etching, and the degree of depth is the 20-100 micron.Said Pyrex are Pyrex7740 glass, and the condition of said anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing are described in the 3rd step: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on the substrate (9) through the SMT technology.Glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
Embodiment 2The wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable; May further comprise the steps: the first step; Etching and light emitting diode matrix corresponding led lens mould micro slot array and on silicon wafer around the spacing of led lens mold slots control mould micro slot array; Led lens mould microflute is not communicated with spacing control mould microflute, places an amount of hot bubble release agent at led lens mould microflute; Lithographic method can adopt dry method or wet etching, can adopt 4 inches silicon chips, and hot bubble release agent can adopt calcium carbonate; The weighing of powder is as the criterion with the gas flow of the glass micro-cavity volume needs of moulding required size, for example, and for 4 inches silicon chips; Width is the groove of 50 microns of 500 microns, the degree of depth, and the number of groove is 500, needs moulding hemisphere glass micro-cavity; The amount of the calcium carbonate that uses is 10 milligrams, and calcium carbonate can be concentrated and be placed in some grooves, also can be placed in a plurality of grooves; Be connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel, and spacing control mould micro slot array is in around the outside part of diode lens mould micro slot array and is communicated with
Second step is with the silicon wafer after the etching and Pyrex disk anode linkage in a vacuum, formation seal chamber; Vacuum degree can adopt the vacuum of 0.02Pa,
In the 3rd step, the disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air, and is incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute form spherical glass micro-cavity, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute and is formed spacing control protruding ring, is cooled to normal temperature (for example 25 degrees centigrade); Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit is mounted preparation to be had on the substrate of silicon conductive through hole and reflector; The position of silicon conductive through hole is corresponding with the assembling position of light-emitting diode, can be on silicon the etching microcavity, and carry out interconnectedly at its bottom preparation silicon through hole, reflector can use the reflector that inner sputtered aluminum forms in the silicon chamber of placing led chip,
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd; Bonding can adopt epoxy resin, also can adopt silica gel to carry out the wafer level bonding,
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED; Glue can adopt the commercial silica gel of refractive index match,
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
Embodiment 3
A kind of wafer-level glass ball cavity encapsulation method of light-emitting diode may further comprise the steps:
The first step; Utilize the Si micro fabrication to go up with dry etching specific microflute and fluid channel pattern at Si disk (like 4 inches wafers); With the corresponding pattern of packaged led array: a. micro slot array; Be connected through fluid channel between the microflute, microflute is circular, and microflute and fluid channel size are adjusted than according to the preparation demand; B. spacing is controlled the mould microflute; In micro slot array, evenly place an amount of hot bubble release agent (CaCO
3); In second step, the above-mentioned Si disk that will have pattern and a hot bubble release agent and Pyrex7740 Pyrex disk anode anode linkage in air or in the vacuum seals above-mentioned microflute and fluid channel, the formation seal chamber; The 3rd step; The disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air; And be incubated 0.5 ~ 10min; Hot bubble release agent is because of decomposes produces the normal pressure that gas forms in airtight cavity, makes on melten glass, to form and corresponding spherical glass micro-cavity of said silicon microflute and the cylindrical glass fluid channel that is connected spherical glass micro-cavity; Glass with time interval control mould microflute top flow in the groove under suction function, forms spacing control protruding ring, and heat is but to normal temperature, and annealing obtains wafer-stage glass micro-cavity with 25% TMAH at 90 ℃ of conditions silica removal that goes down.In the 4th step, light-emitting diode (LED) chip attachment is had on the substrate of silicon conductive through hole (TSV) and reflector to preparation; The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd; The 6th step, in light-emitting diode (LED) chip and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED.
In the technique scheme, prepare said glass packages and adopt the positive pressure thermoforming method: wet etching forms the microcavity array of specific dimensions on silicon wafer, and in microcavity, puts into hot bubble release agent (like calcium carbonate); Above-mentioned silicon wafer and Pyrex7740 glass wafer are carried out bonding under vacuum condition, make glass wafer and above-mentioned specific pattern form seal chamber, the disk that bonding is good is heated to 820 ℃ ~ 950 ℃ under an atmospheric pressure; For example be chosen for 820 ℃, 850 ℃, 900 ℃; Insulation 3 ~ 8min for example can choose little: 4 min, 5 min; 6 min, the glass after chamber external and internal pressure official post is softening blows afloat outside seal chamber and forms the ball chamber, cooling; Stress relieving by annealing under normal pressure is removed mould silicon again, and formation is that microcavity, front are lenticular glass packages with the corresponding back side of above-mentioned microcavity patterning.Said bonding is an anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.In the 4th step, adopt conductive silver glue (the Ablebond 84-1LMISR4S of ablestik company mixes the conducting resinl of silver) that led chip is mounted on the TSV silicon substrate, condition of cure is: 175 ℃ of curing temperatures, curing time 45min.The coating method of fluorescent material is: in the silica gel of the 6th step filling, evenly sneak into fluorescent material.Evenly sneak into a certain amount of fluorescent material (YAG:ce3+) at silica gel (DOW CORNING), and use point gum machine to carry out wafer level silica gel and inject.In order to obtain good white light LEDs, the concentration of fluorescent material is respectively 2.0g/cm
3, 2.5 g/cm
3, 3.0 g/cm
3, 3.5 g/cm
3, 4.0 g/cm
3, 4.5 g/cm
3Glass packages and the silicon wafer bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode (LED) chip.
Said LED encapsulation scheme can adopt silicon through hole technology to go between in silicon chip back, promptly in the silicon chamber of placing silicon chip, punches, and metallization causes the back side through through hole with the electrode above the LED then; Also can on bonding face, make lead wire circuit, it is drawn.
Claims (9)
1. the wafer-level encapsulation method of the adjustable light-emitting diode of a lens focus is characterized in that, may further comprise the steps:
The first step; Go up etching at silicon wafer (1) and control mould microflute (3) array with the corresponding led lens mould of light emitting diode matrix microflute (2) array with around the spacing of led lens mold slots (2); Led lens mould microflute (2) is not communicated with spacing control mould microflute (3), places an amount of hot bubble release agent (4) at led lens mould microflute (2);
Second step is with the silicon wafer after the etching (1) and Pyrex disk (5) anode linkage in a vacuum, formation seal chamber;
The 3rd step; Silicon wafer that above-mentioned bonding is good and Pyrex disk are heated to 820 ℃ ~ 950 ℃ in air; And being incubated 0.5 ~ 10min, hot bubble release agent produces gas because of decomposes, makes the melten glass corresponding to led lens mould microflute (2) form spherical glass micro-cavity (6); The inside and outside pressure official post melten glass of spacing control mould microflute (3) is inserted spacing control mould microflute (3) and is formed spacing control protruding ring (7); Be cooled to normal temperature, annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit (8) is mounted preparation to be had on the substrate (9) of silicon conductive through hole and reflector;
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate (9) are bondd;
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue (10) through spacing control ring breach (71), and solidify, realize the wafer level packaging of light-emitting diode chip for backlight unit;
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity (6) after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
2. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable is characterized in that hot bubble release agent (4) is a calcium carbonate powder.
3. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable; It is characterized in that being connected through fluid channel (21) between the said led lens mould microflute (2); The width ratio of diode lens mould microflute (2) and fluid channel (21) is greater than 3:1; Make diode lens mould microflute (2) be in connection spacing control mould microflute (3) array around among, be communicated with respectively inside and outside between spacing control mould microflute (3) array.
4. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable; It is characterized in that being connected through fluid channel (21) between the said led lens mould microflute (2); The width ratio of diode lens mould microflute (2) and fluid channel (21) is greater than 3:1, and being in around the outside part of diode lens mould microflute (2) array of spacing control mould microflute (3) array is communicated with.
5. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable is characterized in that said first step silicon wafer etching technics is a wet etching, and the degree of depth is the 20-100 micron.
6. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable is characterized in that, said Pyrex are Pyrex7740 glass, and the condition of said anode linkage is: 400 ℃ of temperature, voltage: 600V.
7. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable; It is characterized in that; The process conditions of annealing are described in the 3rd step: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.
8. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable is characterized in that, in the 4th step, uses conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on the substrate (9) through surface installation technique.
9. the wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable; It is characterized in that glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
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