CN102569020A - Method and device for removing cut oxidation films of 8-inch wafers - Google Patents
Method and device for removing cut oxidation films of 8-inch wafers Download PDFInfo
- Publication number
- CN102569020A CN102569020A CN2010105972425A CN201010597242A CN102569020A CN 102569020 A CN102569020 A CN 102569020A CN 2010105972425 A CN2010105972425 A CN 2010105972425A CN 201010597242 A CN201010597242 A CN 201010597242A CN 102569020 A CN102569020 A CN 102569020A
- Authority
- CN
- China
- Prior art keywords
- otch
- acid
- oxide
- film
- down groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 title abstract 7
- 230000003647 oxidation Effects 0.000 title abstract 4
- 238000007254 oxidation reaction Methods 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 239000004744 fabric Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000009966 trimming Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Landscapes
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a method and device for removing cut oxidation films of 8-inch wafers. The method comprises the steps as follows: (1) silicon wafers are sorted by a sorting machine, cuts vertically face downwards; (2) wafer boxes are arranged on a positioning clamp groove, and are covered by a nitrogen protection cover; (3) a motor is started, and a screw drives a lifting tank to be lifted upwards from an HF acid liquor tank; (4) when an etching block is tightly contacted with each silicon wafer cut, HF acid reacts with the oxidation films; (5) a motor is started, and the lifting tank is driven to descend to the HF acid liquor tank; and (6) the nitrogen protection cover is opened, and the silicon wafers are taken out for checking. According to the method, the conical etching block is contacted with the cuts of the 8-inch wafers, so as to achieve the purpose of removing the oxidation films of the cuts. The device has the advantages of simple structure, convenience for operation, and low process cost.
Description
Technical field
The present invention relates to a kind of 8 inches wafer otch oxide-films and remove method and apparatus
Background technology
Along with developing rapidly of domestic IC industry; The demand of silicon substrate material is also increasing; Quality requirement is more and more stricter; In order to prevent that the heavy doping silicon chip from prolonging outdiffusion and the autodoping that causes impurity in the production process outside, need the counterweight doped silicon wafer to carry on the back envelope usually and handle, promptly at the back side of substrate slice growth one deck SiO
2Film is because impurity is at SiO
2In diffusion coefficient much smaller than the diffusion coefficient in silicon, therefore can carry out effective shutoff to the impurity in the substrate slice.Thing followed problem is: silicon chip back side growth SiO
2In the time of film, the silicon chip edge SiO that grown too
2Film, and this one deck SiO at edge
2Film, the epitaxial layer quality positive to silicon chip can produce bigger influence, therefore must remove the edge oxide-film.
At present the domestic trimming mode of taking mainly contains two kinds of pad pasting trimming and roller trimmings; The pad pasting trimming takes the silicon chip back side to paste the mode of the blue film of PTFE; Back side oxide-film is protected, edge and otch oxide-film are removed, the equipment and the cost of raw material of this process using are higher; And complex manufacturing, operating difficulties.
The roller trimming is to the back of the body mounting below 6 inches; The trimming technology is fairly perfect, but die size rises to after 8 inches, adopts otch to replace the plane of reference; Original roller trimming technology has run into insoluble problem; Be exactly can't the otch oxide-film be removed, therefore be necessary to provide a kind of novel device, be used to remove the otch oxide-film.
Summary of the invention
The purpose of this invention is to provide a kind of 8 inches wafer otch oxide-films and remove method and apparatus, this method, device are simple, easy to operate, high efficiency, the technology cost is lower, compare with the pad pasting trimming, the technology cost only be its ten thousand/several.
For realizing above-mentioned purpose, the present invention takes following design:
This 8 inches wafer otch oxide-film removal methods comprise following step: 8 inches good silicon slice placed of Device for piling sheets reason are placed on the gaily decorated basket draw-in groove, and otch is built nitrogen protecting cover vertically downward at this moment; Start motor; Drive the up-down groove and at the uniform velocity rise, after taper is corroded piece and the silicon chip otch is contacted, stop to rise, the HF acid of carrying reacts with the otch oxide-film; After accomplishing the oxide-film removal, driven by motor up-down groove is reduced in the HF acid storage.
Wherein said HF acid and H
2The ratio of O is 1: 5-10.
Said driven by motor up-down groove elevation rate is 4-10mm/s.
Said HF acid is 10-30s with the oxide-film time of reacting.
The nitrogen pressure of said nitrogen protecting cover is 10-25psi.
This 8 inches wafer otch oxide-film removal devices, it comprises a nitrogen protecting cover, the liftable groove of a bottom opening; Embedded with conical corrosion piece; A HF acid storage, a motor leading screw combination that acts on the up-down groove is according to the said 8 inches wafer otch oxide-film removal methods of claim 1; It is characterized in that: wherein said up-down trench bottom is for opening borehole structure, Circularhole diameter 10-25mm.
Corrosion piece conical points radius of curvature r is 0.8-1.0mm, and taper surface length a is 0.5-2cm, 90 ° of two taper surface angles, and corrosion tile height b is 5-15cm.
Said corrosion block of material is a tetrafluoro, and the cloth that is easy to soak into and store HF acid has been pasted in the conical points position.
The cloth pasted of conical points position wherein, thickness 0.1-0.3mm.
Description of drawings
Fig. 1: the process chart of removing the otch oxide-film
Fig. 2: the front view of apparatus of the present invention
The left view of Fig. 3: Fig. 2
The vertical view of Fig. 4: Fig. 2
Fig. 5: device core sketch map
Fig. 6: taper corrosion piece sketch map
Among the figure, 1 is container body of outer cover, and 2 is nitrogen protecting cover, and 3 is the up-down groove of built-in corrosion piece, and 4 is the HF acid storage, and 5 are the combination of electrode leading screw.
Embodiment
Consult Fig. 1-shown in Figure 6, the method for 8 inches wafer otch of removal of the present invention oxide-film comprises the steps: at first opening device air draft; Adopt Device for piling sheets that silicon chip is managed, the silicon chip otch vertically downward; Film magazine is positioned over locating groove, builds nitrogen protecting cover; Open motor, drive the up-down groove and move upward with speed 4-6mm/s by HF acid acid tank; Closely contact back stop motion, reaction time 10-15s until the corrosion piece with otch; Starter motor drives the up-down groove and is back to the HF acid tank with speed 4-6mm/s; Open nitrogen protecting cover, take out film magazine, inspection otch oxide-film is removed situation.Process 100 altogether, inspection otch situation is removed about 0.6mm, and uniformity, can satisfy processing request.
Consult Fig. 1-shown in Figure 6, the method for 8 inches wafer otch of removal of the present invention oxide-film comprises the steps: at first opening device air draft; Adopt Device for piling sheets that silicon chip is managed, the silicon chip otch vertically downward; Film magazine is positioned over locating groove, builds nitrogen protecting cover; Open motor, drive the up-down groove and move upward with speed 6-10mm/s by HF acid acid tank; Closely contact back stop motion, reaction time 15-30s until the corrosion piece with otch; Starter motor drives the up-down groove and is back to the HF acid tank with speed 6-10mm/s; Open nitrogen protecting cover, take out film magazine, after matched edges oxide-film removal device again, remove the edge, process 200 altogether, inspection otch and edge mate situation, edge remove width and otch in full accord, even, satisfy the IC processing request fully.
Claims (10)
1. one kind 8 inches wafer otch oxide-film removal methods, it is characterized in that: it may further comprise the steps:
1) adopt Device for piling sheets that silicon chip is managed, otch vertically downward;
2) film magazine is positioned over locating groove, builds nitrogen protecting cover;
3) open motor, drive the up-down groove by upwards rising in the HF acid acid tank by leading screw;
4) when the corrosion piece closely contacts with the silicon chip otch, HF acid begins to react with oxide-film;
5) open motor, drive the up-down groove and reduce to HF acid acid tank;
6) open nitrogen protecting cover, take out silicon chip and test.
2. according to the said 8 inches wafer otch oxide-film removal methods of claim 1, it is characterized in that: said HF acid and H
2The ratio of O is 1: 5-10.
3. according to the said 8 inches wafer otch oxide-film removal methods of claim 1, it is characterized in that: said driven by motor up-down groove elevation rate is 4-10mm/s.
4. according to the said 8 inches wafer otch oxide-film removal methods of claim 1, it is characterized in that: said HF acid is 10-30s with the oxide-film time of reacting.
5. according to the said 8 inches wafer otch oxide-film removal methods of claim 1, it is characterized in that: the nitrogen pressure of said nitrogen protecting cover is 10-25psi.
6. device that is used for the said method of claim 1, it is characterized in that: it comprises a nitrogen protecting cover, the up-down groove of a bottom opening; Up-down groove embedded with conical corrosion piece; A HF acid storage, a motor leading screw combination that acts on the up-down groove, a container body of outer cover that has vent.
7. device according to claim 6 is characterized in that: said up-down trench bottom is for opening borehole structure, Circularhole diameter 10-25mm.
8. device according to claim 6 is characterized in that: said corrosion piece conical points radius of curvature r is 0.8-1.0mm, and taper surface length a is 0.5-2cm, 90 ° of two taper surface angles, and corrosion tile height b is 5-15cm.
9. according to claim 6 or 8 described devices, it is characterized in that: said corrosion block of material is a tetrafluoro, and the cloth that is easy to soak into and store HF acid has been pasted in the conical points position.
10. device according to claim 9 is characterized in that: the cloth that paste the conical points position, thickness 0.1-0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010597242.5A CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010597242.5A CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569020A true CN102569020A (en) | 2012-07-11 |
| CN102569020B CN102569020B (en) | 2015-01-14 |
Family
ID=46414141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010597242.5A Active CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569020B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065935A (en) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1753154A (en) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | Method of removing chip oxide film edge and its device |
| CN1777980A (en) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | Method for removing silicon oxide film and processing apparatus |
| CN101339901A (en) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | Oxide film on wafer surface removing process and apparatus |
| US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
| CN201910408U (en) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | Removing device of oxide film at 8-inch wafer notch |
-
2010
- 2010-12-10 CN CN201010597242.5A patent/CN102569020B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1777980A (en) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | Method for removing silicon oxide film and processing apparatus |
| CN1753154A (en) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | Method of removing chip oxide film edge and its device |
| CN101339901A (en) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | Oxide film on wafer surface removing process and apparatus |
| US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
| CN201910408U (en) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | Removing device of oxide film at 8-inch wafer notch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065935A (en) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
| CN103065935B (en) * | 2012-12-03 | 2015-02-04 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102569020B (en) | 2015-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8863957B2 (en) | Wafer separation apparatus, wafer separation and transfer apparatus, wafer separation method, wafer separation and transfer method, and solar cell wafer separation and transfer method | |
| TWI254349B (en) | Apparatus and method for semiconductor chip detachment | |
| US9159598B2 (en) | Semiconductor wafer mounting method and semiconductor wafer mounting apparatus | |
| US9039867B2 (en) | Method for detaching a semiconductor chip from a foil | |
| JP5965316B2 (en) | Wafer separation apparatus, wafer separation transfer apparatus, wafer separation method, wafer separation transfer method, and solar cell wafer separation transfer method | |
| CN106024980B (en) | Full-automatic inserting machine | |
| CN106784169A (en) | Dry-wet integrated machine and production line | |
| CN117153898A (en) | Cut battery piece and component thereof and passivation coating method for side section of battery piece | |
| CN102653859A (en) | Lifting and delivering device for automatic wafer loading and unloading of graphite boat | |
| CN1160761C (en) | Sample processing system | |
| CN201910408U (en) | Removing device of oxide film at 8-inch wafer notch | |
| CN102569020B (en) | Method and device for removing cut oxidation films of 8-inch wafers | |
| CN219311012U (en) | Wafer clamping and pressing inspection combined arm | |
| CN216698333U (en) | Wafer clamping device | |
| CN118016520B (en) | Oxidation treatment method and solar cell | |
| JP4668350B1 (en) | Semiconductor wafer separator | |
| CN211743112U (en) | Silicon chip drawing and placing positioning device and transferring system | |
| CN205645782U (en) | Piece device is got to silicon chip | |
| CN117410220A (en) | A silicon wafer transmission mechanism and transmission method | |
| CN212380408U (en) | Semiconductor package wafer cutting structure | |
| CN221466595U (en) | Automatic inserting mechanism and inserting equipment | |
| CN201753201U (en) | Automatic sheet retracting mechanism for load-bearing box | |
| CN209487528U (en) | A kind of solar battery sheet is done over again insert sheet device | |
| KR200152548Y1 (en) | Wafer loading device of semiconductor vertical deposition equipment | |
| CN114734319B (en) | Semiconductor material processing system and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 100088, 2, Xinjie street, Beijing Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Applicant before: GRINM Semiconductor Materials Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD. TO: GRINM ADVANCED MATERIALS CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150610 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150610 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |