CN102568864A - Capacitor structure and manufacturing method thereof - Google Patents

Abstract

The present invention provides a capacitor structure and a manufacturing method thereof. The capacitor structure comprises: a first conductor layer, a dielectric layer and a second conductor layer. The first conductor layer comprises a first metal material and a second metal material. A gap is formed between the first metal materials, and the second metal material is filled into the gap by heat melting. Thus, the first conductor layer can achieve the effect of effectively reducing the heat treatment temperature by heat melting the first metal material and the second metal material, and the capacitor structure can achieve the effect of improving the conductivity and increasing the overall strength at the same time.

Description

Capacitor structure and manufacturing method thereof

technical field

The invention relates to a capacitor structure and a manufacturing method thereof, in particular to a capacitor structure and a manufacturing method thereof which use combined composite materials to increase conductivity and reduce heat treatment temperature.

Background technique

In recent years, electronic integrated circuits have been required to operate at lower voltage, higher frequency, and lower noise. For solid electrolytic capacitors, the reduction of ESR (equivalent series resistance), ESL (equivalent series inductance) Inductance) reduction requirements are also increasing. Metal powders suitable for anode materials of solid electrolytic capacitors include, for example, tantalum, niobium, titanium, tungsten, and molybdenum. Among them, capacitors using tantalum are rapidly spreading as parts of cell phones, personal computers, and the like due to their low ESR and high capacitance. Recently, higher capacity and lower ESR of capacitors have been demanded. In order to increase the capacitance of capacitors to a greater extent, fine tantalum powder with a large specific surface area is being developed as its anode material.

Please refer to Fig. 1, it is an existing solid electrolytic capacitor, its solid electrolytic capacitor 10 includes a tantalum sintered body 11, a tantalum oxide layer 12 is formed on the surface of the tantalum sintered body 11, and the tantalum oxide layer 12 is coated in sequence There is a solid electrolyte 13, a graphite layer 14, and a silver layer 15, and the manufacturing steps of this solid electrolytic capacitor 10 are as follows: First, add a binder to the tantalum powder obtained above, so that the total is 3 to 5 mass %, after fully mixing, prepare a cuboid granule with a length of 2.4 mm, a width of 3.4 mm, and a thickness of 1.8 mm by means of a compression mold. The load during compression molding is preferably 3-15MN (Mega Newton)/m ² , the bulk density of the compression-molded body is preferably 3200-4000kg/m ³ , and the preferred binder can be, for example, camphor, stearic acid , polyvinyl alcohol, naphthalene, etc., and the granular material is sintered by heating at 2900-3020°C. In addition, the sintering temperature can be appropriately set according to the specific surface area. In this way, a porous tantalum sintered body 11 can be obtained. The obtained tantalum sintered body 11 is subjected to a chemical conversion treatment to form a tantalum oxide layer 12 on the surface of the tantalum sintered body 11 to form an anode. For the chemical conversion treatment, for example, the temperature is 80° C., and the concentration is 0.6% by mass of phosphoric acid aqueous solution, and the current density of 140 A/g is increased to 10 to 20 V for 6 hours.

Next, on the surface of the tantalum sintered body 11, a solid electrolyte layer 13 such as polypyrrole or polythiophene, a graphite layer 14, and a silver layer 15 are formed in this order. Finally, the external terminal 18 (anode) is connected to the tantalum sintered body 11 , and the external terminal 19 (cathode) is connected to the silver layer 15 via the conductive adhesive 16 . Finally, the solid electrolytic capacitor 10 is obtained by covering the entire body with the resin 17 and performing aging.

However, the tantalum particles must be heated at a high temperature of 2900-3020°C to obtain a porous tantalum sintered body 11, which in turn requires high-temperature heat treatment equipment for sintering, and the need to use high-cost heat treatment equipment and increase Construction costs.

As mentioned above, the prior art has the following disadvantages:

1. High-cost heat treatment equipment must be used;

2. The construction cost must be increased.

Therefore, in view of the shortcomings derived from the above-mentioned existing products, the inventor of this case exhausted his brains, used his years of experience in this industry, devoted himself to research, innovated and improved, and finally successfully developed and completed this "capacitor structure and its manufacturing method. "The case is actually an invention with enhanced efficacy.

Contents of the invention

The main purpose of the present invention is to provide a capacitor structure and a manufacturing method thereof which utilize composite materials to effectively reduce the heat treatment temperature.

The main purpose of the present invention is to provide a capacitor structure and its manufacturing method which utilizes composite materials to improve conductivity.

In order to achieve the above object, the technical scheme adopted in the present invention is:

A capacitor structure, characterized in that it comprises:

a first conductor layer, having a first metal material and a second metal material;

a dielectric layer formed on the first conductor layer; and

A second conductor layer is arranged on the other side of the dielectric layer opposite to the first conductor layer.

Wherein: it further includes a first external terminal and a second external terminal, the first external terminal and the second external terminal pass through the first conductor layer and are electrically connected to the second conductor layer respectively.

Wherein: a gap is formed between the first metal materials, and the second metal material is arranged at the position of the gap.

Wherein: the first metal material is tantalum (Ta), niobium (Nb), or a mixture of tantalum (Ta) and niobium (Nb).

Wherein: the second metal material is aluminum (Al), copper (Cu), or a mixture of aluminum (Al) and copper (Cu).

Wherein: the dielectric layer is Ta2O5, Nb2O3, or _a mixture _{of Ta2O5} and _Nb2O3 .

Wherein: the dielectric layer is Al2O3, CuO, or a mixture _{of Al2O3} and CuO.

Wherein: the second conductor layer is silver (Ag).

Wherein: the first and second external terminals are selected from aluminum (Al), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), tantalum (Ta), niobium (Nb), aluminum One of the group consisting of alloy (Al Alloy) and silver alloy (Ag Alloy) or a mixture of any two or more substances in this group.

Wherein: it further includes a solid electrolyte layer and a graphite layer, and the solid electrolyte layer and the graphite layer are sequentially arranged on the dielectric layer.

Wherein: it further includes a covering layer, said covering layer is selected from one of the group consisting of resin, ethylene propylene rubber and butyl rubber or a mixture of any two or more substances in this group.

In order to achieve the above object, the technical scheme adopted in the present invention is:

A method for manufacturing a capacitor structure, characterized in that it comprises the following steps:

forming a first conductor layer having a first metal material and a second metal material;

forming a dielectric layer on the first conductor layer; and

A second conductor layer is formed at a position opposite to the other side of the first conductor layer.

Wherein: further comprising providing a first external terminal, so that the first conductor layer covers the surface of the first external terminal.

Wherein: further comprising providing a second external terminal, so that the second conductor layer is electrically connected to the second external terminal through a conductive adhesive.

Wherein: the second metal material is filled into the gap between the first metal materials through thermal melting at 600°C-1000°C and bonded to the first metal material.

Wherein: the first metal material is tantalum (Ta), niobium (Nb), or a mixture of tantalum (Ta) and niobium (Nb).

Wherein: the second metal material is aluminum (Al), copper (Cu), or a mixture of aluminum (Al) and copper (Cu).

Wherein: the dielectric layer is Ta2O5, Nb2O3, or _a mixture _{of Ta2O5} and _Nb2O3 .

Wherein: the dielectric layer is Al2O3, CuO, or a mixture _{of Al2O3} and CuO.

Wherein: the second conductor layer is silver (Ag).

Wherein: the first and second external terminals are selected from aluminum (Al), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), tantalum (Ta), niobium (Nb), aluminum One of the group consisting of alloy (Al Alloy) and silver alloy (Ag Alloy) or a mixture of any two or more substances in this group.

Wherein: the second conductor layer is silver (Ag).

Wherein: it further includes forming a solid electrolyte layer and a graphite layer, and the solid electrolyte layer and the graphite layer are sequentially formed on the dielectric layer.

Wherein: further comprising forming a covering layer, said covering layer is selected from one of the group consisting of resin, ethylene propylene rubber and butyl rubber or a mixture of any two or more substances in this group.

Compared with the prior art, the present invention has the beneficial effects that: the first conductor layer can effectively reduce the heat treatment temperature through the thermal melting relationship between its first metal material and a second metal material, and at the same time achieve an increase in temperature. The effect of conductivity.

Description of drawings

Fig. 1 is the sectional schematic diagram of existing solid electrolytic capacitor;

Fig. 2 is a schematic cross-sectional view of a capacitor structure of the present invention;

Fig. 3 is a partial cross-sectional schematic diagram of a capacitor structure of the present invention;

Fig. 4 is a flow chart of the manufacturing method of the capacitor structure of the present invention.

Description of reference numerals: capacitor structure 20; first conductor layer 30; first metal material 31; second metal material 32; first external terminal 33; dielectric layer 40; solid electrolyte layer 41; graphite layer 42; second conductor layer 50 ; conductive adhesive 51 ; second external terminal 52 ; cladding layer 60 .

Detailed ways

The above-mentioned purpose of the present invention and its structural and functional characteristics will be described according to the preferred embodiments of the accompanying drawings.

Please refer to FIG. 2 , which is a schematic cross-sectional view of the capacitance structure of the present invention. The capacitance structure 20 includes: a first conductor layer 30 having a first metal material 31 and a second metal material 32, and the first conductor The layer 30 is covered on the surface of a first external terminal 33, and a gap is formed between the first metal material 31, and the second metal material 32 is arranged at the gap position and formed on the surface of the first external terminal 33, In addition, a dielectric layer 40 is formed on the first metal material 31, and a solid electrolyte layer 41 and a graphite layer 42 are sequentially arranged on the dielectric layer 40, and a second conductor is covered on the graphite layer 42. Layer 50, the second conductor layer 50 is electrically connected to a second external terminal 52, and one end of the second conductor layer 50 and the second external terminal 52 is covered by a cladding layer 60;

Wherein the first metal material 31 is selected from one of the metal groups of tantalum (Ta) and niobium (Nb), or the first metal material 31 is a mixture of tantalum (Ta) and niobium (Nb), and the The second metal material 32 is selected from one of the metal groups of aluminum (Al) and copper (Cu), or the second metal material 32 is a mixture of aluminum (Al) and copper (Cu), so the first metal material 31 covers the surface of the first external terminal 33 to form the gap, and the second metal material 32 is arranged at the position of the gap, and the surface of the first metal material 31 and the second metal material 32 are formed simultaneously. The dielectric layer 40, and the dielectric layer 40 is selected from one of the group consisting of Ta ₂ O ₅ and Nb ₂ O ₃ or selected from one of the group consisting of Al ₂ O ₃ and CuO, or The dielectric layer 40 is a mixture of _Ta2O5 and _Nb2O3 or a _mixture of _Al2O3 and _CuO , and the solid electrolyte layer 41 and the graphite layer 42 are sequentially arranged on the _dielectric layer 40, and The second conductor layer 50 is sequentially formed, and the second conductor layer 50 is selected from silver (Ag), the second conductor layer 50 is electrically connected to the second external terminal 52 via a conductive adhesive 51, And the first external terminal 33 and the second external terminal 52 are selected from aluminum (Al), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), tantalum (Ta), niobium (Nb ), aluminum alloy (Al Alloy), silver alloy (Ag Alloy), or a mixture of any two or more substances in this group, and its coating layer 60 is selected from resin, ethylene-propylene rubber , one of the group consisting of butyl rubber or a mixture of any two or more substances in this group, and wrap the second conductor layer 50 and one end of the second external terminal 52 .

Please cooperate and refer to Fig. 2, Fig. 3, shown in Fig. 4 at the same time, it is the sectional schematic diagram, partial sectional schematic diagram and method flow chart of capacitor structure of the present invention, comprises the following steps:

Sp1: providing a first external terminal, and forming a first conductor layer having a first metal material and a second metal material on the surface of the first external terminal;

Sp2: filling the second metal material into the gap between the first metal materials and bonding to the first metal material through hot melting;

Sp3: forming a dielectric layer on the first conductor layer;

Sp4: sequentially forming a solid electrolyte layer and a graphite layer on the dielectric layer;

Sp5: a second conductor layer is coated on the graphite layer;

Sp6: providing a second external terminal, and electrically connecting the second external terminal to the second conductor layer via a conductive adhesive;

Sp7: forming a cladding layer at the position of the second conductor layer and one end of the first and second external terminals.

The surface of the first external terminal 33 is covered with the first conductor layer 30, wherein the first metal material 31 is selected from one of the metal groups of tantalum (Ta) and niobium (Nb), or the first A metal material 31 is a mixture of tantalum (Ta) and niobium (Nb), and the second metal material 32 is selected from one of the metal groups of aluminum (Al) and copper (Cu), or the second metal material 32 It is a mixture of aluminum (Al) and copper (Cu), and is heated at a high temperature of 600°C-1000°C, so that the second metal material 32 is melted into the gap between the first metal materials 31 and bonded to the The first metal material 31, and the dielectric layer 40 is formed on the surface of the first metal material 31 and the second metal material 32 at the same time, and the dielectric layer 40 is selected from the composition of Ta ₂ O ₅ and Nb ₂ O ₃ One of the group or selected from one of the group consisting of Al ₂ O ₃ and CuO, or the dielectric layer 40 is a mixture of Ta ₂ O ₅ and Nb ₂ O ₃ or a mixture of Al ₂ O ₃ and CuO , and the solid electrolyte layer 41 and the graphite layer 42 are sequentially formed on the dielectric layer 40, and then the second conductor layer 50 is formed on the graphite layer 42, and the second conductor layer 50 is selected from Silver (Ag), and the second conductor layer 50 is electrically connected to the second external terminal 52 via a conductive adhesive 51, and the first external terminal 33 and the second external terminal 52 are selected from aluminum ( Al), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), tantalum (Ta), niobium (Nb), aluminum alloy (Al Alloy), silver alloy (Ag Alloy) One of the group or a mixture of any two or more substances in the group, and the cladding layer 60 is coated at one end of the second conductor layer 50 and the second external terminal 52, and the cladding layer 60 One of the group consisting of resin, ethylene propylene rubber, and butyl rubber, or a mixture of any two or more substances in this group, so that the first conductor layer 30 can be connected with the first metal material 31 The thermal fusion relationship between a second metal material 32 enables the second metal material to fill the gap between the first metal materials 31 to effectively reduce the heat treatment temperature and make the capacitor structure 20 achieve the effect of increasing the conductivity effect.

The above description is only illustrative of the present invention, rather than restrictive. Those of ordinary skill in the art understand that many modifications, changes or equivalents can be made without departing from the spirit and scope defined in the claims, but All will fall within the protection scope of the present invention.

Claims (24)

1. A capacitor structure, characterized in that, comprising: a first conductor layer, having a first metal material and a second metal material; a dielectric layer formed on the first conductor layer; and A second conductor layer is arranged on the other side of the dielectric layer opposite to the first conductor layer. 2. The capacitive structure according to claim 1, further comprising a first external terminal and a second external terminal, the first external terminal and the second external terminal pass through the first conductor layer respectively electrically connected to the second conductor layer. 3 . The capacitor structure according to claim 1 , wherein a gap is formed between the first metal materials, and the second metal material is disposed at a position of the gap. 4 . 4. The capacitor structure according to claim 1, wherein the first metal material is tantalum (Ta), niobium (Nb), or a mixture of tantalum (Ta) and niobium (Nb). 5. The capacitor structure according to claim 1, wherein the second metal material is aluminum (Al), copper (Cu), or a mixture of aluminum (Al) and copper (Cu). 6. The capacitor structure according to claim 1, wherein the dielectric layer is Ta2O5, Nb2O3, or _a mixture _{of Ta2O5} and _Nb2O3 . 7. The capacitor structure according to claim 1, wherein the dielectric layer is Al2O3, CuO, or a mixture _{of Al2O3} and CuO. 8. The capacitor structure according to claim 1, wherein the second conductor layer is silver (Ag). 9. The capacitor structure according to claim 2, characterized in that: said first and second external terminals are selected from aluminum (Al), silver (Ag), copper (Cu), nickel (Ni), tin ( One of the group consisting of Sn), tantalum (Ta), niobium (Nb), aluminum alloy (Al Alloy) and silver alloy (Ag Alloy) or a mixture of any two or more substances in this group. 10 . The capacitor structure according to claim 1 , further comprising a solid electrolyte layer and a graphite layer, and the solid electrolyte layer and the graphite layer are sequentially disposed on the dielectric layer. 11 . 11. The capacitor structure according to claim 10, characterized in that: further comprising a coating layer, the coating layer is selected from one of the group consisting of resin, ethylene propylene rubber and butyl rubber or the Group A mixture of any two or more substances. 12. A method for manufacturing a capacitor structure, comprising the following steps: forming a first conductor layer having a first metal material and a second metal material; forming a dielectric layer on the first conductor layer; and A second conductor layer is formed at a position opposite to the other side of the first conductor layer. 13. The manufacturing method of the capacitor structure according to claim 12, further comprising: providing a first external terminal, so that the first conductive layer covers the surface of the first external terminal. 14. The manufacturing method of the capacitor structure according to claim 12, further comprising providing a second external terminal, so that the second conductor layer is electrically connected to the second external terminal through a conductive adhesive. 15. The manufacturing method of the capacitor structure according to claim 12, characterized in that: the second metal material is filled into the gap between the first metal materials through thermal fusion at 600°C-1000°C and combined with the first metal material. 16. The method for manufacturing a capacitor structure according to claim 12, wherein the first metal material is tantalum (Ta), niobium (Nb), or a mixture of tantalum (Ta) and niobium (Nb). 17. The method for manufacturing a capacitor structure according to claim 12, wherein the second metal material is aluminum (Al), copper (Cu), or a mixture of aluminum (Al) and copper (Cu). 18. The method for manufacturing a capacitor _structure according to claim 12, wherein the dielectric layer is Ta2O5, Nb2O3, or _a mixture of _Ta2O5 and _Nb2O3 . 19. The method for manufacturing a capacitor structure according to claim 12, wherein the dielectric layer is Al2O3, CuO, or a mixture of _Al2O3 and _CuO . 20. The method for manufacturing a capacitor structure according to claim 12, wherein the second conductor layer is silver (Ag). 21. The manufacturing method of a capacitor structure according to claim 13 or 14, characterized in that: said first and second external terminals are selected from aluminum (Al), silver (Ag), copper (Cu), nickel ( One of the group consisting of Ni), tin (Sn), tantalum (Ta), niobium (Nb), aluminum alloy (Al Alloy) and silver alloy (Ag Alloy) or any two or more substances in this group mixture. 22. The method for manufacturing a capacitor structure according to claim 12, wherein the second conductor layer is silver (Ag). 23. The method for manufacturing a capacitor structure according to claim 12, further comprising forming a solid electrolyte layer and a graphite layer, the solid electrolyte layer and the graphite layer being sequentially formed on the dielectric layer. 24. The method for manufacturing a capacitor structure according to claim 12, further comprising forming a coating layer, the coating layer is selected from the group consisting of resin, ethylene-propylene rubber and butyl rubber One or a mixture of any two or more substances of this group.

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