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CN102534476A - 被覆件及其制造方法 - Google Patents

被覆件及其制造方法 Download PDF

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Publication number
CN102534476A
CN102534476A CN2010105804472A CN201010580447A CN102534476A CN 102534476 A CN102534476 A CN 102534476A CN 2010105804472 A CN2010105804472 A CN 2010105804472A CN 201010580447 A CN201010580447 A CN 201010580447A CN 102534476 A CN102534476 A CN 102534476A
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layer
barrier layer
substrate
oxidation
manufacturing
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Inventor
张新倍
陈文荣
蒋焕梧
陈正士
刘咸柱
李聪
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN2010105804472A priority Critical patent/CN102534476A/zh
Priority to US13/082,541 priority patent/US20120148865A1/en
Publication of CN102534476A publication Critical patent/CN102534476A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种被覆件，其包括基体、依次形成于基体表面的阻挡层及抗氧化层，所述阻挡层为铱金属层，所述抗氧化层为氮氧化铬层。该被覆件具有良好的高温抗氧化性。本发明还提供一种上述被覆件的制造方法。

Description

被覆件及其制造方法
技术领域
本发明涉及一种被覆件及其制造方法。
背景技术
铌(Nb)合金由于具有高熔点、低密度、室温断裂韧性佳及铸造性好等优点，而广泛应用于航空、航天、电子及冶金等领域。但铌合金最明显的缺点是高温抗氧化性能差，如此严重限制了铌合金在上述领域的应用。
贵金属铱(Ir)熔点高，因饱和蒸气压低、氧渗透率低而具有优良的高温抗氧化性能，是唯一在1600℃以上的空气中仍具有很好机械性能的金属。然而，研究发现，当温度超过1600℃时，镀覆于铌合金上的铱涂层表面便易氧化而形成氧化铱，使其高温抗氧化性能失效。
发明内容
有鉴于此，有必要提供一种具有良好高温抗氧化性的被覆件。
另外，还有必要提供一种制造所述被覆件的方法。
一种被覆件，包括基体、依次形成于基体表面的阻挡层及抗氧化层，所述阻挡层为铱金属层，所述抗氧化层为氮氧化铬层。
一种被覆件的制造方法，包括以下步骤：
提供基体；
于基体上磁控溅射阻挡层，所述阻挡层为铱金属层；
于所述阻挡层上磁控溅射抗氧化层，所述抗氧化层为氮氧化铬层。
本发明被覆件的制造方法，在基体上先磁控溅射形成阻挡层，再于该阻挡层上磁控溅射形成抗氧化层。所述阻挡层与抗氧化层组成的复合膜层能显著提高所述基体的高温抗氧化性，从而使所述被覆件具有良好的高温抗氧化性。
附图说明
图1为本发明一较佳实施例的被覆件的剖视图。
主要元件符号说明
被覆件      10
基体        11
阻挡层      13
抗氧化层    15
具体实施方式
请参阅图1，本发明一较佳实施例的被覆件10包括基体11、依次形成于基体11表面的阻挡层13及抗氧化层15。该被覆件10可以为涡轮叶片、喷嘴等航天航空机械零部件及交通零部件。
所述基体11的材质为铌(Nb)合金。
所述阻挡层13为铱(Ir)金属层，其厚度为2～3.5μm。
所述抗氧化层15为氮氧化铬(CrON)层，其厚度为2～3.5μm。
所述阻挡层13及抗氧化层15可分别通过磁控溅射镀膜法形成。可以理解，所述阻挡层13及抗氧化层15还可通过电弧离子镀膜法、蒸发镀膜法形成。
本发明一较佳实施例的被覆件10的制造方法主要包括如下步骤：
提供基体11。
对该基体11进行预处理。该预处理可包括常规的对基体11进行抛光、化学超声波清洗及烘干等步骤。
对经上述处理后的基体11的表面进行氩气等离子体清洗，以进一步去除基体11表面的油污，以及改善基体11表面与后续涂层的结合力。该等离子体清洗的具体操作及工艺参数为：将基体11固定于一真空镀膜机(图未示)的镀膜室的转架上，抽真空镀膜室至真空度为8.0×10-3Pa，以400～700sccm(标准状态毫升/分钟)的流量向镀膜室内通入纯度为99.999％的氩气，并施加-500～-800V的偏压于基体11，对基体11表面进行等离子体清洗，清洗时间为3～10min。
于基体11表面沉积所述阻挡层13。所述阻挡层13为铱金属层，形成所述阻挡层13的具体操作及工艺参数如下：以氩气为工作气体，调节氩气流量至20～150sccm，设置沉积气压为12～18Pa，开启已安装于所述镀膜室中的铱靶的电源，设置其功率为2～5kw，对基体11施加-100～-300V的偏压，加热镀膜室至100～200℃(即镀膜温度为100～200℃)，沉积阻挡层13。沉积该阻挡层13的时间为150～250min。
由于铱金属具有低的氧渗透率，在不超过1600的高温条件下，所述阻挡层13可有效阻碍环境中的氧气向膜层内的扩散，从而提高了所述基体11的抗氧化性。
于所述阻挡层13上沉积抗氧化层15。所述抗氧化层15为CrON层，形成所述抗氧化层15的具体操作及工艺参数如下：关闭所述铱靶的电源，保持所述氩气的流量不变，并向镀膜室内通入反应气体氮气及氧气，设置氮气的流量为10～50sccm、氧气的流量为20～80sccm，开启安装于所述镀膜室内的一铬靶的电源，设置其功率为2～5kw，对基体11施加-100～-300V的偏压，沉积抗氧化层15。沉积该抗氧化层15的时间为150～250min。
所述抗氧化层15在其形成过程中可形成Cr-O及Cr-N两相化合物，该两相化合物的同时形成可相互抑制各相晶粒的生长，从而可降低各相晶粒的尺寸，使得所述抗氧化层15的致密性增强，进而可阻碍被覆件10的Nb、Cr等原子半径较大的原子向外扩散及外界的氧气向被覆件10内层的扩散，如此进一步提高了所述基体11及阻挡层13的高温抗氧化能力。
此外，当温度超过1600时，由于CrON具有较高的熔点，所述抗氧化层15仍可阻碍金属铱形成氧化铱，从而避免所述阻挡层13高温抗氧化性能失效现象的发生。
关闭负偏压及铬靶的电源，停止通入氩气、氮气及氧气，待所述抗氧化层15冷却后，向镀膜内通入空气，打开镀膜室门，取出镀覆有阻挡层13及抗氧化层15的基体11。
本发明较佳实施例被覆件10的制造方法，在基体11上先磁控溅射形成阻挡层13，再于该阻挡层13上磁控溅射形成抗氧化层15。所述阻挡层13与抗氧化层15组成的复合膜层能显著提高该基体11的高温抗氧化性，从而使所述被覆件10具有良好的高温抗氧化性。

Claims (9)

1.一种被覆件，包括基体及依次形成于基体表面的阻挡层、抗氧化层，其特征在于：所述阻挡层为铱金属层，所述抗氧化层为氮氧化铬层。
2.如权利要求1所述的被覆件，其特征在于：所述基体的材质为铌合金。
3.如权利要求1所述的被覆件，其特征在于：所述阻挡层及抗氧化层通过磁控溅射镀膜法形成。
4.如权利要求1或3所述的被覆件，其特征在于：所述阻挡层的厚度为2～3.5μm。
5.如权利要求1或3所述的被覆件，其特征在于：所述抗氧化层的厚度为2～3.5μm。
6.一种被覆件的制造方法，包括以下步骤：
提供基体；
于基体上磁控溅射阻挡层，所述阻挡层为铱金属层；
于所述阻挡层上磁控溅射抗氧化层，所述抗氧化层为氮氧化铬层。
7.如权利要求6所述的被覆件的制造方法，其特征在于：磁控溅射所述阻挡层的步骤采用如下方式实现：以氩气为工作气体，设置其流量为20～150sccm，采用铱靶为靶材，设置其电源功率为2～5kw，对基体施加-100～-300V的偏压，镀膜气压12～18Pa，镀膜温度为100～200℃，镀膜时间为150～250min。
8.如权利要求6所述的被覆件的制造方法，其特征在于：磁控溅射所述抗氧化层的步骤采用如下方式实现：以氩气为工作气体，设置其流量为20～150sccm，以氮气及氧气为反应气体，设置氮气的流量为10～50sccm、氧气的流量为20～80sccm，采用铬靶为靶材，设置其电源功率为2～5kw，对基体施加-100～-300V的偏压，镀膜温度为100～200℃，镀膜时间为150～250min。
9.如权利要求6所述的被覆件的制造方法，其特征在于：所述被覆件的制造方法还包括在磁控溅射所述阻挡层前对所述基体进行氩气等离子体清洗的步骤。
CN2010105804472A 2010-12-09 2010-12-09 被覆件及其制造方法 Pending CN102534476A (zh)

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CN103614698A (zh) * 2013-12-18 2014-03-05 广西大学 一种高温抗氧化铌合金复合涂层及其制备方法

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CN103614698B (zh) * 2013-12-18 2015-10-21 广西大学 一种高温抗氧化铌合金复合涂层及其制备方法

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Application publication date: 20120704