[go: up one dir, main page]

CN102468200A - Heat treatment device - Google Patents

Heat treatment device Download PDF

Info

Publication number
CN102468200A
CN102468200A CN2011103326127A CN201110332612A CN102468200A CN 102468200 A CN102468200 A CN 102468200A CN 2011103326127 A CN2011103326127 A CN 2011103326127A CN 201110332612 A CN201110332612 A CN 201110332612A CN 102468200 A CN102468200 A CN 102468200A
Authority
CN
China
Prior art keywords
substrate
heat treatment
temperature
heater
tubular heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011103326127A
Other languages
Chinese (zh)
Inventor
相马康孝
中村彰宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102468200A publication Critical patent/CN102468200A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • H10P72/0431
    • H10P95/90

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

The invention provides a heat treatment apparatus. Which shortens the heat treatment time and saves the heating power in the heat treatment of the glass substrate. A plurality of lower surface body-shaped heaters arranged below a conveying path for conveying a substrate in a horizontal direction are divided into an E row in the central part of the conveying path in the width direction, and a D row and an F row at the two ends. The heating power at the central portion is set higher than the heating power at the both end portions. The column of the lower surface body-shaped heater maintains the temperature corresponding to the heating of the tubular heater, and maintains the temperature to approximately a half region of the space by heat conduction. The heat of the tubular heaters of the column (D, F) is also maintained to a temperature of approximately half the area of the space by heat conduction. Since the tubular heater has low electric power, the temperature is only (Dh, Fh), but the accumulated heat in the inner wall of the housing is integrated with the heat of (Dh, Fh) to reach the same temperature as (Eh).

Description

加热处理装置Heat treatment device

技术领域 technical field

本发明涉及一种对例如平板显示器(FPD)用的玻璃基板等基板实施加热处理的加热处理装置。The present invention relates to a heat treatment apparatus for performing heat treatment on a substrate such as a glass substrate for a flat panel display (FPD).

背景技术 Background technique

通常,平板显示器(FPD)使用光刻工艺来制造。FPD的光刻工艺具有在玻璃基板上涂敷抗蚀剂的涂敷工序、将光掩模的图案转印到抗蚀剂膜上的曝光工序以及在曝光之后将图案显影的显影工序这三个基本工序。在这些基本工序的前后,作为辅助进行各种热处理工序。例如,在涂敷工序之前进行用于自基板除去水分的热处理(脱水烘焙)。在涂敷工序和曝光工序之间,在涂敷抗蚀剂膜之后进行用于使残留溶剂蒸发的热处理(预烘焙)。在显影工序之后,进行用于将残留在抗蚀图案中的显影液、清洗液蒸发除去的热处理(后烘焙)。Typically, flat panel displays (FPDs) are fabricated using photolithographic processes. The photolithography process of FPD has three steps: a coating process of coating a resist on a glass substrate, an exposure process of transferring a pattern of a photomask onto a resist film, and a development process of developing a pattern after exposure. basic process. Before and after these basic steps, various heat treatment steps are performed as an auxiliary. For example, heat treatment (dehydration baking) for removing moisture from the substrate is performed before the coating process. Between the application process and the exposure process, heat treatment (pre-baking) for evaporating residual solvent is performed after application of the resist film. After the development step, heat treatment (post-baking) for evaporating and removing the developing solution and cleaning solution remaining in the resist pattern is performed.

以往的加热处理(烘焙)装置在大多情况下为热平板烘烤炉(hot plate oven)的构造,在热板上载置玻璃基板等,从上方盖上盖子而形成腔室,在腔室内加热基板,排出自抗蚀剂膜挥发的稀薄剂等溶剂。在该方式的加热处理装置中,为了与输送机器人交接基板,包括使多根升降销自热板的通孔升降而使基板升降的升降销机构、将盖子盖在热板上或者将盖子向上方打开的盖开闭机构。或者,固定上盖而在一侧壁上设有基板的输入输出口的类型的装置包括用于将该基板输入输出口开闭的闸门机构(例如参照专利文献1、2)。Conventional heat treatment (baking) equipment has a hot plate oven structure in many cases. A glass substrate or the like is placed on a hot plate, and a chamber is formed by closing a lid from above, and the substrate is heated in the chamber. , to discharge solvents such as thinner volatilized from the resist film. In the heat treatment apparatus of this form, in order to transfer the substrate to the transfer robot, a lift pin mechanism is included to raise and lower the substrate by raising and lowering a plurality of lift pins from the through holes of the hot plate, and the lid is placed on the hot plate or the lid is turned upward. Open the lid opening and closing mechanism. Alternatively, a device of the type in which the upper cover is fixed and the substrate inlet and outlet is provided on one side wall includes a shutter mechanism for opening and closing the substrate inlet and outlet (for example, refer to Patent Documents 1 and 2).

专利文献1:日本特开平8-313855号公报Patent Document 1: Japanese Patent Application Laid-Open No. 8-313855

专利文献2:日本特开平11-204428号公报Patent Document 2: Japanese Patent Application Laid-Open No. 11-204428

但是,在以往的加热处理装置中,存在由升降销升降、输送机器人交接的工序导致输入输出基板所花费的时间较长、生产率较低这样的问题。另外,近年来,由FPD的大型化导致出现一边竟达到2m以上的巨大的玻璃基板,在上述以往的加热处理装置中,有可能由在输送臂和升降销之间或者在升降销和加热板之间交接时的冲击导致破损、产生微粒。另外,加热板通常温度响应性较差,保持在规定的温度,因此,在上述的以往的加热处理装置中,玻璃基板从载置在加热板上开始到达到设定的温度为止需要相当长的时间,因此,有可能消耗较多的电力。However, in the conventional heat treatment apparatus, there are problems in that it takes a long time to load and unload substrates due to the process of raising and lowering the lift pins and handing over the substrates by the conveyance robot, resulting in low productivity. In addition, in recent years, due to the increase in the size of FPDs, huge glass substrates with a side of more than 2m have appeared. The impact at the time of handover will cause damage and generate particles. In addition, the heating plate generally has poor temperature responsiveness and is maintained at a predetermined temperature. Therefore, in the above-mentioned conventional heat treatment apparatus, it takes a relatively long time from when the glass substrate is placed on the heating plate to reaching the set temperature. time, therefore, it is possible to consume more power.

发明内容 Contents of the invention

本发明是鉴于上述以往技术的问题点而做成的,其目的在于提供一种即使是大型玻璃基板也不会使基板破损就提高处理速度并能够实现减少微粒和节能的加热处理装置。The present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to provide a heat treatment apparatus capable of increasing the processing speed without damaging the substrate even for a large glass substrate, reducing particles and saving energy.

为了解决上述问题,本发明提供一种加热处理装置,其用于对基板进行加热处理,其特征在于,该加热处理装置包括:输送路径,其用于将基板在水平方向上输送;框体,其以包围上述输送路径的方式设置,并且,在上述基板的输送方向的中央部和输送方向的两端部设有用于进行内部的排气的排气机构;上部面体状加热部,其在上述输送路径的上部配置有多个;下部面体状加热部,其在上述输送路径的下部配置有多个;上述上部面体状加热部及下部面体状加热部中的任一个加热部或两个加热部在上述输送路径的输送方向上被划分;上部面体状加热部及下部面体状加热部中的至少下部面体状加热部被划分为在上述输送路径的宽度方向上的中央部和两端部;该加热处理装置形成为利用控制装置能够将上述两端部的温度控制得低得低于划分出的上述中央部的温度。In order to solve the above problems, the present invention provides a heat treatment device, which is used for heat treatment of the substrate, characterized in that the heat treatment device includes: a transport path, which is used to transport the substrate in the horizontal direction; a frame, It is installed in a manner to surround the above-mentioned conveying path, and an exhaust mechanism for internal exhaust is provided at the central part of the conveying direction of the above-mentioned substrate and at both ends of the conveying direction; The upper portion of the transport path is provided with a plurality of lower planar heating units, and a plurality of lower planar heating units are arranged at the lower part of the transport route; any one or both of the upper planar heating unit and the lower planar heating unit are arranged. Divided in the conveying direction of the conveying path; at least the lower planar heating part of the upper planar heating part and the lower planar heating part is divided into a central part and both ends in the width direction of the conveying path; The heat treatment device is formed so that the temperature of the above-mentioned both ends can be controlled to be lower than the temperature of the divided above-mentioned central part by the control device.

在本发明中,优选上述上部面体状加热部及下部面体状加热部中的至少一个加热部包括面体状的散热体、埋设在该散热体中的管状加热器。在这种情况下,优选在上述面体状加热部的宽度方向的中央部埋设第1管状加热器,在面体状加热部的宽度方向的两侧部分别埋设第2管状加热器和第3管状加热器,上述第2管状加热器及第3管状加热器是同种类的管状加热器,更优选上述第1管状加热器的端部与上述第2管状加热器的端部、上述第1管状加热器的端部与第3管状加热器的端部在上述输送路径的宽度方向上以规定的距离分开。在这种情况下,优选上述第1管状加热器是套式加热器,上述第2管状加热器及第3管状加热器是盒式加热器。In the present invention, it is preferable that at least one of the upper planar heating unit and the lower planar heating unit includes a planar radiator and a tubular heater embedded in the radiator. In this case, it is preferable to embed a first tubular heater in the central portion of the planar heating portion in the width direction, and to embed a second tubular heater and a third tubular heater on both sides of the planar heating portion in the width direction. device, the above-mentioned second tubular heater and the third tubular heater are the same type of tubular heater, more preferably the end of the first tubular heater and the end of the second tubular heater, the first tubular heater The end of the pipe heater is separated from the end of the third tubular heater by a predetermined distance in the width direction of the above-mentioned conveying path. In this case, it is preferable that the first tubular heater is a jacket heater, and the second tubular heater and the third tubular heater are cassette heaters.

另外,在本发明中,优选上述框体的壁部中的至少一部分具有包括互相隔着空间地设置的内壁和外壁的双层壁构造,上述内壁和外壁之间的空间起到由将上述框体内外绝热的绝热材料和空气构成的绝热层的作用。In addition, in the present invention, it is preferable that at least a part of the wall portion of the frame body has a double-wall structure including an inner wall and an outer wall provided with a space therebetween, and the space between the inner wall and the outer wall acts as a mechanism for separating the frame. The function of the thermal insulation layer composed of thermal insulation material and air for internal and external thermal insulation.

另外,在本发明中,优选面体状的上述散热体包括:表面,其与进行加热处理的基板相面对;背面,其是面体状的上述散热体的与该表面相反的一侧的面;缺口,其自该背面连续,设置在位于上述分开的端部之间的区域中。In addition, in the present invention, it is preferable that the above-mentioned planar heat dissipation body includes: a surface, which faces the substrate to be heat-treated; a back surface, which is the surface of the planar heat dissipation body opposite to the surface; A notch, which is continuous from the back, is provided in the region between the above-mentioned separated ends.

为了解决上述问题,本发明提供一种加热处理装置,其用于对基板进行加热处理,其特征在于,该加热处理装置包括:输送路径,其用于将基板在水平方向上输送;框体,其以包围上述输送路径的方式设置,并且,在上述基板的输送方向的中央部和输送方向的两端部设有用于进行内部的排气的排气机构;上部面体状加热部,其在上述输送路径的上部配置有多个;下部面体状加热部,其在上述输送路径的下部配置有多个;上述上部面体状加热部及下部面体状加热部在上述输送路径的输送方向上被划分;上述上部面体状加热部及下部面体状加热部被划分为在上述输送路径的宽度方向上的中央部和两端部;上述上部面体状加热部及下部面体状加热部在上述中央部和上述两端部的内部各自具有用于加热的加热器;上述中央部的加热器温度被设定为比上述两端部的加热器温度高的温度。In order to solve the above problems, the present invention provides a heat treatment device, which is used for heat treatment of the substrate, characterized in that the heat treatment device includes: a transport path, which is used to transport the substrate in the horizontal direction; a frame, It is installed in a manner to surround the above-mentioned conveying path, and an exhaust mechanism for internal exhaust is provided at the central part of the conveying direction of the above-mentioned substrate and at both ends of the conveying direction; There are a plurality of upper portions of the conveying path; a plurality of lower surface-shaped heating parts are arranged in the lower part of the conveying path; the upper planar heating part and the lower planar heating part are divided in the conveying direction of the conveying path; The above-mentioned upper surface-shaped heating part and the lower surface-shaped heating part are divided into a central part and two end parts in the width direction of the above-mentioned conveying path; The insides of the end portions each have heaters for heating; the temperature of the heaters in the central portion is set to a higher temperature than the heaters in the two end portions.

另外,在本发明中,优选将上述中央部的加热器温度设定为比上述两端部的加热器温度高出规定值的温度,使得积蓄在上述框体中的热量传导到上述两端部而上述两端部的温度和上述中央部的温度成为相同的温度。In addition, in the present invention, it is preferable to set the temperature of the heater at the central portion to be higher than the temperature of the heaters at the both ends by a predetermined value so that the heat accumulated in the frame is conducted to the both ends. On the other hand, the temperature of the above-mentioned both ends and the temperature of the said center part become the same temperature.

采用本发明,在上述加热部中,在上述输送路径的输送方向和宽度方向上对用于将基板在水平方向上输送的输送路径、以包围上述输送路径的方式设置的框体、在上述输送路径的上部和下部配置有多个的面体状加热部进行划分,按划分出的区域进行温度控制,由此,能够对基板进行生产率较高和均匀性较高的加热。According to the present invention, in the heating unit, the conveyance path for conveying the substrate in the horizontal direction, the frame provided to surround the conveyance path, and the conveyance path between the conveyance path and the width direction of the conveyance path The upper and lower parts of the path are divided by arranging a plurality of planar heating parts, and the temperature is controlled for each divided area, whereby the substrate can be heated with high productivity and high uniformity.

另外,在上述框体的输送方向中央部和两端部设有用于进行上述框体内的排气的排气机构,并且,在上部的加热部及下部的加热部分别将上述输送路径的宽度方向两侧部设定为比上述输送路径的宽度方向中央部低的加热电力,由此,能够以更高的均匀性进行加热处理。In addition, an exhaust mechanism for exhausting air in the above-mentioned frame is provided at the central part and both ends of the conveying direction of the above-mentioned frame, and the heating part at the upper part and the heating part at the lower part make the width direction of the above-mentioned conveying path The heating power is set to be lower in both side portions than in the central portion in the width direction of the conveyance path, whereby heat treatment can be performed with higher uniformity.

附图说明 Description of drawings

图1是表示本发明的涂敷-显影装置的概略俯视图。Fig. 1 is a schematic plan view showing a coating-developing device of the present invention.

图2的(a)、(b)是本发明的加热处理装置下部的俯视方向的剖视图。(a) and (b) of FIG. 2 are cross-sectional views in the planar direction of the lower part of the heat treatment apparatus of the present invention.

图3是本发明的加热处理装置的侧面方向的剖视图。Fig. 3 is a cross-sectional view in the side direction of the heat treatment apparatus of the present invention.

图4是以截面表示本发明的下部面体状加热器的一部分的俯视图。Fig. 4 is a plan view showing a part of the lower planar heater of the present invention in cross section.

图5是以截面表示本发明的上部面体状加热器的一部分的俯视图。Fig. 5 is a plan view showing a section of a part of the upper surface heater of the present invention.

图6是本发明的下部面体状加热器的宽度方向分割的温度控制概略图。Fig. 6 is a schematic diagram of temperature control of the widthwise division of the lower planar heater according to the present invention.

图7的(a)是本发明的下部面体状加热器的概略剖视图、图7的(b)是对上述下部面体状加热器施加的加热电力的分布图、图7的(c)是上述下部面体状加热器的温度分布图。(a) of FIG. 7 is a schematic sectional view of the lower surface heater of the present invention, (b) of FIG. 7 is a distribution diagram of heating power applied to the lower surface heater, and (c) of FIG. Temperature distribution diagram of a planar heater.

图8是表示本发明的设置在散热体中的缺口的俯视图。Fig. 8 is a top view showing notches provided in the radiator according to the present invention.

图9是表示本发明的设置在散热体中的缺口的另一形态的俯视图。Fig. 9 is a plan view showing another form of the notch provided in the radiator according to the present invention.

图10是表示本发明的设置在散热体中的缺口的另一形态的俯视图。Fig. 10 is a plan view showing another form of the notch provided in the radiator according to the present invention.

具体实施方式 Detailed ways

下面,说明将本发明的加热处理装置应用于FPD基板的抗蚀剂涂敷-显影处理装置的情况。Next, a case where the heat treatment apparatus of the present invention is applied to a resist coating-development treatment apparatus for an FPD substrate will be described.

图1表示作为能够应用本发明的加热处理装置的一结构例的涂敷-显影处理系统。该涂敷-显影处理系统200设置在无尘室内,例如将FPD基板作为被处理基板(以下称作基板G),在FPD制造工艺中进行光刻工序中的清洗、抗蚀剂涂敷、预烘焙、显影和后烘焙等各处理。FIG. 1 shows a coating-development processing system as an example of the configuration of a heat processing apparatus to which the present invention can be applied. The coating-development processing system 200 is installed in a clean room, for example, an FPD substrate is used as a substrate to be processed (hereinafter referred to as substrate G), and cleaning, resist coating, pre-processing, etc. Various processes such as baking, developing, and post-baking.

该涂敷-显影处理系统200大体由4个区构成。其包括将用于收容基板G的盒C与外部装置交接的盒工位部(C/S)201、将药液涂敷在基板G上的涂敷生产线部202、与曝光装置交接基板的转接部(I/F)203、在曝光之后将基板G显影的显影生产线部205。曝光装置204与转接部203相邻地设置。The coating-development processing system 200 is generally composed of four zones. It includes a cassette station (C/S) 201 that transfers a cassette C for storing a substrate G to an external device, a coating line portion 202 that applies a chemical solution to a substrate G, and a transfer line that transfers a substrate to an exposure device. An interface (I/F) 203, and a developing line part 205 for developing the substrate G after exposure. The exposure device 204 is provided adjacent to the transition part 203 .

盒工位部(C/S)201包括盒载置台10和输送机构11,上述盒载置台10能够供盒C在水平方向、例如X方向上并列载置至4个,该盒C能够将基板G多层层叠而多张收容;上述输送机构11用于相对于该盒载置台10的盒C存取基板G。The cassette station section (C/S) 201 includes a cassette mounting table 10 and a transport mechanism 11. The cassette mounting table 10 can place up to four cassettes C side by side in the horizontal direction, for example, in the X direction. G is stacked in multiple layers and stored in multiple sheets; the conveyance mechanism 11 is used to access the substrate G with respect to the cassette C of the cassette mounting table 10 .

输送机构11具有能够保持基板G的部件、例如输送臂12,其能够在水平的X、Y方向、铅垂的Z方向及水平旋转(θ)这4个轴线上动作,能够与相邻的涂敷生产线202、显影生产线205交接基板G。The conveyance mechanism 11 has a member capable of holding the substrate G, such as a conveyance arm 12, which can move on the four axes of the horizontal X and Y directions, the vertical Z direction, and the horizontal rotation (θ). The coating production line 202 and the development production line 205 deliver the substrate G.

在涂敷线路202中,自盒工位部201朝向转接部203去依次排列有准分子UV照射单元(e-UV)21、擦除清洗单元(S CR)22、预加热单元(PH)23、附着单元(AD)24、冷却单元(COL)25、抗蚀剂涂敷单元(CT)26、减压干燥单元(DP)27、加热处理单元(HT)28、冷却单元(COL)29。In the coating line 202, an excimer UV irradiation unit (e-UV) 21, an erasing cleaning unit (S CR) 22, a preheating unit (PH) are arranged in sequence from the box station part 201 toward the transfer part 203. 23. Attachment unit (AD) 24, cooling unit (COL) 25, resist coating unit (CT) 26, decompression drying unit (DP) 27, heat treatment unit (HT) 28, cooling unit (COL) 29 .

准分子UV照射单元(e-UV)21对基板G所含有的有机物进行除去处理,擦除清洗单元(SCR)22对基板G进行擦除清洗处理和干燥处理。预加热单元(PH)23对基板G进行加热处理,附着单元(AD)24对基板进行疏水化处理,冷却单元(COL)25将基板G冷却。抗蚀剂涂敷单元(CT)26向基板G上供给抗蚀剂液而形成抗蚀剂膜,减压干燥单元(DP)27在减压条件下使基板G上的抗蚀剂膜所含有的挥发成分蒸发而将抗蚀剂膜干燥。之后详细说明的加热处理单元(HT)28对基板G进行加热处理,冷却单元(COL)29与冷却单元(COL)25同样将基板G冷却。The excimer UV irradiation unit (e-UV) 21 performs removal processing of organic substances contained in the substrate G, and the erasing cleaning unit (SCR) 22 performs erasing cleaning processing and drying processing on the substrate G. The preheating unit (PH) 23 heats the substrate G, the attachment unit (AD) 24 performs hydrophobization treatment on the substrate, and the cooling unit (COL) 25 cools the substrate G. The resist coating unit (CT) 26 supplies a resist liquid onto the substrate G to form a resist film, and the decompression drying unit (DP) 27 makes the resist film contained on the substrate G under reduced pressure conditions. The volatile components evaporate to dry the resist film. A heat treatment unit (HT) 28 described later in detail heat-processes the substrate G, and a cooling unit (COL) 29 cools the substrate G similarly to the cooling unit (COL) 25 .

显影生产线205自转接部203朝向盒工位部201侧去依次排列有显影单元(DEV)30、加热处理单元(HT)31、冷却单元(COL)32。另外,在冷却单元(COL)32和盒工位部201之间设有检查装置(IP)35,该检查装置(IP)35用于对实施了包含抗蚀剂涂敷和显影的一连串处理后的基板G进行检查。In the development production line 205 , a development unit (DEV) 30 , a heat treatment unit (HT) 31 , and a cooling unit (COL) 32 are arranged sequentially from the transfer portion 203 toward the box station portion 201 . In addition, between the cooling unit (COL) 32 and the cassette station part 201, an inspection device (IP) 35 for performing a series of processes including resist coating and development is provided. The substrate G is inspected.

显影单元(DEV)30按顺序进行向基板G上涂敷显影液的处理、基板G的冲洗处理、基板G的干燥处理。加热处理单元(HT)31与加热处理单元(HT)28同样对基板G进行加热处理,冷却单元(COL)32与冷却单元(COL)25同样将基板G冷却。The developing unit (DEV) 30 performs a process of applying a developer to the substrate G, a process of rinsing the substrate G, and a process of drying the substrate G in this order. The heat treatment unit (HT) 31 heat-processes the substrate G similarly to the heat treatment unit (HT) 28 , and the cooling unit (COL) 32 cools the substrate G similarly to the cooling unit (COL) 25 .

转接部203包括配置有能够收容基板G的缓冲盒的、作为基板G的交接部的旋转台(RS)44、对在涂敷生产线202中输送来的基板G进行接收并将该基板G输送到旋转台(RS)44的输送臂43。输送臂43能够在水平的X、Y方向、铅垂的Z方向及水平旋转(θ)这4个轴线上动作,其也能够进入到与输送臂43相邻地设置的曝光装置204、与输送臂43、显影单元(DEV)30相邻地设置的、具有周边曝光装置(EE)和标码生成器(TITLER)的外部装置区90中。The transfer unit 203 includes a rotary table (RS) 44 serving as a delivery unit for the substrate G on which a buffer box capable of accommodating the substrate G is arranged, receives the substrate G conveyed from the coating line 202 and conveys the substrate G Transfer arm 43 to rotary table (RS) 44. The transport arm 43 can move on the four axes of the horizontal X and Y directions, the vertical Z direction, and the horizontal rotation (θ), and it can also enter the exposure device 204 provided adjacent to the transport arm 43, and the transport arm 43. Arm 43 , developer unit (DEV) 30 are arranged adjacently in external device area 90 with peripheral exposure device (EE) and code generator (TITLER).

涂敷-显影处理系统200被控制装置101连接起来而被控制装置101控制。在控制装置101上连接有输入输出部102和存储部103,上述输入输出部102包括为了供操作者使涂敷-显影处理系统200的各部或各单元工作而输入命令的键盘、用于对各部或各单元的运转状况进行监视的显示器等,上述存储部103用于对控制程序、记录有处理条件数据等的制程程序进行存储,该控制程序、处理条件数据等用于利用控制装置101的控制来实现由涂敷-显影处理系统200执行的加热处理、冷却处理等各种处理。The coating-development processing system 200 is connected to the control device 101 and controlled by the control device 101 . The input and output unit 102 and the storage unit 103 are connected to the control device 101. The input and output unit 102 includes a keyboard for the operator to input commands for each part or each unit of the coating-developing processing system 200, and is used to control each part. or a display for monitoring the operation status of each unit, the above-mentioned storage unit 103 is used to store a control program, a process program in which processing condition data, etc. are recorded, and the control program, processing condition data, etc. Various treatments such as heating treatment and cooling treatment performed by the coating-development treatment system 200 are realized.

根据需要,利用来自输入输出部102的指示等自存储部103调出任意的制程程序并使控制装置101执行,从而能够在控制装置101的控制下在涂敷-显影处理系统200中进行目标处理。另外,控制程序、处理条件数据等的制程程序也能够使用被存储在计算机可读取的存储介质、例如CD-ROM、硬盘、闪存器等中的数据、或者也能够从其他装置、例如通过专用线路随时传送而在线利用。If necessary, an arbitrary process program can be called from the storage unit 103 by an instruction from the input and output unit 102 and executed by the control device 101, so that the target process can be performed in the coating-development processing system 200 under the control of the control device 101 . In addition, process programs such as control programs and processing condition data can also use data stored in computer-readable storage media such as CD-ROMs, hard disks, flash memory, etc., or can also be obtained from other devices, such as through dedicated The line is transmitted at any time and used online.

在这样构成的涂敷-显影处理系统200中,首先,利用输送装置11的输送臂12将载置在盒工位部201的载置台10上的盒C内的基板G输送到涂敷生产线202的上游侧端部,在准分子UV照射单元(e-UV)21内,利用紫外线照射对基板G实施干式清洗。在该紫外线清洗中,主要除去基板表面的有机物。在紫外线清洗结束之后,利用辊输送将基板G转移到清洗工艺部的擦除清洗单元(SCR)22。In the coating-development processing system 200 configured in this way, first, the substrate G in the cassette C placed on the mounting table 10 of the cassette station section 201 is transported to the coating line 202 by the transport arm 12 of the transport device 11. The upstream end of the substrate G is dry-cleaned by ultraviolet irradiation in the excimer UV irradiation unit (e-UV) 21 . In this ultraviolet cleaning, organic substances on the surface of the substrate are mainly removed. After the ultraviolet cleaning is finished, the substrate G is transferred to the scrub cleaning unit (SCR) 22 of the cleaning process section by roller conveyance.

在擦除清洗单元(SCR)22中,在利用辊输送以水平姿态平流地输送的同时,对基板G的上表面(被处理面)实施刷净(brushing)清洗、吹喷(blow)清洗,从而自基板表面除去颗粒状的污物。另外,清洗之后,也在将基板G平流地输送的同时,利用吹拂器等进行吹净,使基板G干燥。在预加热单元(PH)23中对在擦除清洗单元(SCR)22内清洗处理完毕的基板G实施加热处理而该基板G被脱水。在附着单元(AD)24中对结束了在预加热单元(PH)23中进行的加热处理的基板G实施疏水化处理。利用疏水化处理提高基板G和抗蚀剂液的密合性。在冷却单元(COL)25中将结束了在附着单元(AD)24中进行的疏水化处理的基板G冷却至恒定常温的温度。In the wiping and cleaning unit (SCR) 22, the upper surface (surface to be processed) of the substrate G is subjected to brushing cleaning and blow cleaning while being advected in a horizontal posture by roller conveyance, Thus, particulate dirt is removed from the surface of the substrate. In addition, after washing, the substrate G is blown off with a blower or the like while conveying the substrate G advectively, and the substrate G is dried. In the preheating unit (PH) 23 , the substrate G cleaned in the erasing and cleaning unit (SCR) 22 is heated and dehydrated. In the attachment unit (AD) 24 , hydrophobization treatment is performed on the substrate G that has been heat-treated in the preheating unit (PH) 23 . The adhesion between the substrate G and the resist solution is improved by hydrophobization treatment. In the cooling unit (COL) 25 , the substrate G that has undergone the hydrophobization treatment in the attachment unit (AD) 24 is cooled to a constant normal temperature.

在抗蚀剂涂敷单元(CT)26中对在冷却单元(COL)25中冷却后的基板G形成抗蚀剂膜。利用旋涂法或者狭缝涂敷法在基板G的基板上表面(被处理面)涂敷抗蚀剂液。在输送生产线上对在抗蚀剂涂敷单元(CT)26中形成有抗蚀剂膜的基板G进行输送,在减压干燥单元(DP)27中利用减压气氛对抗蚀剂膜进行干燥处理。A resist film is formed on the substrate G cooled in the cooling unit (COL) 25 in the resist coating unit (CT) 26 . A resist solution is applied to the substrate upper surface (surface to be processed) of the substrate G by spin coating or slit coating. The substrate G on which the resist film is formed in the resist coating unit (CT) 26 is transported on the transport line, and the resist film is dried in a reduced pressure atmosphere in the reduced pressure drying unit (DP) 27 .

另外,在抗蚀剂涂敷单元(CT)26采用旋涂法的情况下,抗蚀剂涂敷单元(CT)26的上游侧的附图标记26i和下游侧的附图标记26o均是仅输送基板G的辊输送机构。另外,在抗蚀剂涂敷单元(CT)26采用狭缝涂敷法的情况下,抗蚀剂涂敷单元(CT)26的上游侧的附图标记26i是自冷却单元(COL)25的辊输送机构向在狭缝涂敷的情况下使用的利用空气浮起实施输送的输送机构进行移载的移载单元,下游侧的附图标记26o是自利用空气浮起实施输送的输送机构向减压干燥单元(DP)27的辊输送机构进行移载的移载单元。In addition, in the case where the resist coating unit (CT) 26 employs the spin coating method, each of the reference numeral 26i on the upstream side and the reference numeral 26o on the downstream side of the resist coating unit (CT) 26 are only Roller conveying mechanism for conveying substrate G. In addition, when the resist coating unit (CT) 26 adopts the slit coating method, the reference numeral 26i on the upstream side of the resist coating unit (CT) 26 is that of the self-cooling unit (COL) 25. The transfer unit that transfers from the roller conveying mechanism to the conveying mechanism that performs conveyance by air flotation used in the case of slot coating, and the reference numeral 26o on the downstream side is from the conveyance mechanism that performs conveyance by air flotation to the conveyance unit that conveys by air flotation. The transfer unit that performs transfer by the roller conveying mechanism of the decompression drying unit (DP) 27.

在输送生产线中对在减压干燥单元(DP)27中被实施了抗蚀剂膜的干燥处理的基板G进行输送,在加热处理单元(HT)28中利用加热处理蒸发除去抗蚀剂膜所含有的溶剂。加热处理是利用后述的辊输送机构5在输送生产线上输送的同时进行的。本发明的加热处理单元(HT)28的详细动作见后述。In the transport line, the substrate G subjected to the drying process of the resist film in the depressurized drying unit (DP) 27 is transported, and the heat treatment unit (HT) 28 evaporates and removes the residue of the resist film by heat treatment. Contains solvents. The heat treatment is carried out while being conveyed on a conveying line by a roller conveying mechanism 5 described later. The detailed operation of the heat treatment unit (HT) 28 of the present invention will be described later.

在输送生产线上对结束了在加热处理单元(HT)28中进行的加热处理的基板G进行输送,在冷却单元(COL)29中进行冷却。在涂敷生产线上将在冷却单元(COL)29中被冷却后的基板G输送至下游侧端部之后,利用转接部203的输送臂43输送到旋转台(RS)44上。接着,利用输送臂43将基板G输送到外部装置区90的周边曝光装置(EE)中,在周边曝光装置(EE)中实施用于将抗蚀剂膜的无用的外周部除去的曝光处理。The substrate G that has been heat-treated in the heat treatment unit (HT) 28 is transported on the transport line, and cooled in the cooling unit (COL) 29 . After the substrate G cooled in the cooling unit (COL) 29 is transported to the downstream end in the coating line, it is transported to the rotary table (RS) 44 by the transport arm 43 of the transfer unit 203 . Next, the substrate G is transported by the transport arm 43 to the peripheral exposure device (EE) of the external device area 90, and an exposure process for removing unnecessary peripheral portions of the resist film is performed in the peripheral exposure device (EE).

接着,利用输送臂43将基板G输送到曝光装置204中,对抗蚀剂膜进行规定图案的曝光处理。另外,有时也在将基板G暂时收容在旋转台(RS)44上的缓冲盒中之后输送到曝光装置204中。利用输送臂43将结束了曝光处理的基板G输送到外部装置区90的标码生成器(TITLER)中,在标码生成器(TITLER)中以二维编码、OCR文字将产品的ID信息记录为规定的信息。Next, the substrate G is transported to the exposure device 204 by the transport arm 43, and exposure processing of a predetermined pattern is performed on the resist film. In addition, the substrate G may be transported to the exposure device 204 after being temporarily accommodated in a buffer box on the rotary table (RS) 44 . Use the conveying arm 43 to transport the exposed substrate G to the code generator (TITLER) in the external device area 90, and record the ID information of the product in the code generator (TITLER) with two-dimensional code and OCR characters for the specified information.

在显影生产线205上对在标码生成器(TITLER)中被记录了规定信息的基板G进行输送,在显影单元(DEV)30中依次实施显影液的涂敷处理、冲洗处理和干燥处理。显影液的涂敷处理、冲洗处理和干燥处理利用这样的顺序进行:例如,在输送生产线上输送基板G的同时,在基板G上堆积显影液,接着,临时停止输送,基板倾斜规定角度而显影液流下,在该状态下,向基板G上供给冲洗液而洗掉显影液,之后,在基板G恢复为水平姿态而再次被输送的同时,向基板G喷出干燥气体。The substrate G on which predetermined information is recorded in the tag generator (TITLER) is conveyed in the developing line 205, and the developing unit (DEV) 30 is sequentially subjected to a developer application process, rinse process, and drying process. The developer application process, rinsing process, and drying process are performed in such a sequence that, for example, while the substrate G is being transported on the transport line, the developer is deposited on the substrate G, and then the transport is temporarily stopped, and the substrate is tilted at a predetermined angle for development. In this state, the rinse liquid is supplied onto the substrate G to wash off the developing solution, and then the drying gas is sprayed onto the substrate G while the substrate G is returned to a horizontal posture and transported again.

在输送生产线上对结束了在显影单元(DEV)30中进行的显影液的处理的基板G进行输送,在加热处理单元(HT)31中进行加热处理,蒸发除去抗蚀剂膜所含有的溶剂和水分。加热处理是在利用辊输送机构5在输送生产线上输送的同时进行的。另外,也可以在显影单元(DEV)30和加热处理单元(HT)31之间设置用于对显影液进行脱色处理的i线UV照射单元。在显影生产线205上对结束了在加热处理单元(HT)31中进行的加热处理的基板G进行输送,在冷却单元(COL)32中进行冷却。The substrate G that has been treated with the developer in the developing unit (DEV) 30 is transported on the transport line, and heat-treated in the heat treatment unit (HT) 31 to evaporate and remove the solvent contained in the resist film. and moisture. The heat treatment is performed while being conveyed on the conveying line by the roller conveying mechanism 5 . In addition, an i-line UV irradiation unit for decolorizing the developer may be provided between the developing unit (DEV) 30 and the heat treatment unit (HT) 31 . The substrate G that has been heat-treated in the heat treatment unit (HT) 31 is conveyed on the development line 205 and cooled in the cooling unit (COL) 32 .

在显影生产线205上对在冷却单元(COL)32中冷却后的基板G进行输送,在检查装置(IP)35中进行检查。利用设置在盒工位部201中的输送装置11的输送臂12将通过了检查的基板G收容在被载置于载置台10上的规定的盒C中。The substrate G cooled in the cooling unit (COL) 32 is conveyed on the developing line 205 and inspected in the inspection device (IP) 35 . The substrate G that has passed the inspection is accommodated in a predetermined cassette C placed on the stage 10 by the transfer arm 12 of the transfer device 11 provided in the cassette station section 201 .

接着,利用图3对基板G的在如上所述那样构成的加热处理单元(HT)28、31中进行的加热处理进行说明。在加热处理单元(HT)28中,自减压干燥单元(DP)27侧输送来的基板G通过基板输入口61时交接到辊输送机构5,在利用该辊输送机构5输送的同时,利用被热板控制器104控制温度的上部面体状加热器81和下部面体状加热器71在框体6内加热,在加热处理单元(HT)31中,自显影单元(DEV)30侧输送来的基板G通过基板输入口61时交接到辊输送机构5,在利用该辊输送机构5输送的同时,利用被热板控制器104控制温度的上部面体状加热器81和下部面体状加热器71在框体6内加热。Next, heat treatment of the substrate G performed in the heat treatment units (HT) 28 and 31 configured as described above will be described with reference to FIG. 3 . In the heat treatment unit (HT) 28, the substrate G conveyed from the decompression drying unit (DP) 27 side is handed over to the roller conveying mechanism 5 when passing through the substrate input port 61, and is conveyed by the roller conveying mechanism 5 while using The upper surface-shaped heater 81 and the lower surface-shaped heater 71 whose temperature is controlled by the hot plate controller 104 are heated in the frame body 6, and in the heat treatment unit (HT) 31, the product transported from the developing unit (DEV) 30 side is heated. When the substrate G passes through the substrate input port 61, it is handed over to the roller conveying mechanism 5, and while being conveyed by the roller conveying mechanism 5, the upper planar heater 81 and the lower planar heater 71 whose temperature is controlled by the hot plate controller 104 Heating inside the frame 6.

这样,由于基板的输送和加热同时进行,因此,能够缩短处理时间地进行。由于利用上部面体状加热器81和下部面体状加热器71从上下两面侧对基板G进行加热,因此,能够抑制产生翘曲这种情况。利用辊输送机构5输送来的基板G在通过输出口62时,被交接到冷却单元(COL)29侧(在加热处理单元(HT)31中是冷却单元(COL)32侧)的输送机构。In this way, since the conveyance and heating of the substrate are performed simultaneously, the processing time can be shortened. Since the substrate G is heated from the upper and lower sides by the upper planar heater 81 and the lower planar heater 71 , occurrence of warpage can be suppressed. The substrate G transported by the roller transport mechanism 5 is delivered to the transport mechanism on the cooling unit (COL) 29 side (in the case of the heat treatment unit (HT) 31 , the cooling unit (COL) 32 side) when passing through the output port 62 .

接着,对加热处理单元(HT)28进行详细地说明。另外,由于加热处理单元(HT)31也是与加热处理单元(HT)28完全相同的构造,因此,在此以加热处理单元(HT)28为代表进行说明。Next, the heat treatment unit (HT) 28 will be described in detail. In addition, since the heat treatment unit (HT) 31 also has completely the same structure as the heat treatment unit (HT) 28, the heat treatment unit (HT) 28 will be described here as a representative.

图2是表示加热处理单元(HT)28(加热处理装置)的下部加热部的俯视图,图3是侧视图。加热处理单元(HT)28包括用于将基板G朝向Y方向一侧输送的辊输送机构5、以包围或收容辊输送机构5的方式设置的框体6、用于将在框体6内利用辊输送机构5进行辊输送的基板G加热的加热机构7、8。FIG. 2 is a plan view showing a lower heating portion of a heat treatment unit (HT) 28 (heat treatment device), and FIG. 3 is a side view. The heat treatment unit (HT) 28 includes a roller conveying mechanism 5 for conveying the substrate G toward one side in the Y direction, a frame body 6 provided to surround or accommodate the roller conveying mechanism 5, and is used for using the substrate G in the frame body 6. The roller conveyance mechanism 5 performs heating mechanisms 7 and 8 for heating the substrate G conveyed by the rollers.

辊输送机构5将沿X方向延伸的大致圆柱状的能够旋转的辊构件50在Y方向上空开间隔地以多列配置。辊构件50分别由旋转轴51直接或者经由齿轮等间接地连接于未图示的电动机,利用电动机的驱动而旋转,由此,将基板G在多个辊构件50上朝向Y方向的一侧输送。The roller conveyance mechanism 5 arrange|positions the substantially columnar-shaped rotatable roller member 50 extended in the X direction in a plurality of rows at intervals in the Y direction. The roller members 50 are connected directly or indirectly to an unillustrated motor through a rotating shaft 51 or indirectly through gears, and are driven by the motor to rotate, whereby the substrate G is conveyed toward one side in the Y direction on the plurality of roller members 50 . .

另外,辊构件50各自具有在基板G的全宽方向(X方向)上与基板G接触的形状,为了使被加热机构7加热后的基板G的热量难以传递,辊外周面部52由树脂等导热系数较低的材料形成,旋转轴51是使用了高强度且耐腐蚀性较高的铁素体类不锈钢的转轴。In addition, each of the roller members 50 has a shape in contact with the substrate G in the entire width direction (X direction) of the substrate G. In order to make it difficult to transmit the heat of the substrate G heated by the heating mechanism 7, the roller outer peripheral surface 52 is made of resin or the like to conduct heat. It is made of a material with a low coefficient, and the rotating shaft 51 is a rotating shaft made of high-strength and highly corrosion-resistant ferritic stainless steel.

框体6形成为箱状,能够将基板G以大致水平状态收容,在基板输送方向(Y方向)上配置有狭缝状的基板输入口61和基板输出口62。辊输送机构5的辊构件50分别以旋转轴51能够旋转地支承在轴承60上的方式配置在框体6内,该轴承60设置在框体6的在X方向上相对的侧壁部。The frame body 6 is formed in a box shape, can accommodate the substrate G in a substantially horizontal state, and has a slit-shaped substrate input port 61 and a substrate output port 62 arranged in the substrate transfer direction (Y direction). The roller members 50 of the roller conveyance mechanism 5 are arranged in the frame body 6 so that the rotation shafts 51 are rotatably supported by bearings 60 provided on opposite side wall portions of the frame body 6 in the X direction.

在此,框体6的壁部中的上壁部、底壁部和在Y方向上相对的侧壁部具有双层壁构造,该双层壁构造包括互相隔着空间地设置的内壁63和外壁64,内壁63和外壁64之间的空间65起到将框体6内外绝热的空气绝热层的作用。在外壁64的内侧面设有用于将框体6内外绝热的绝热材料66。Here, among the walls of the housing 6, the upper wall, the bottom wall, and the side walls facing in the Y direction have a double-wall structure including inner walls 63 and The outer wall 64 , the inner wall 63 , and the space 65 between the outer wall 64 function as an air insulation layer that insulates the inside and outside of the frame body 6 . A heat insulating material 66 for insulating the inside and outside of the housing 6 is provided on the inner surface of the outer wall 64 .

加热机构7包括作为下部面体状加热部的下部面体状加热器71(71a~71o),该下部面体状加热部沿着基板G的由辊输送机构5构成的输送路径设置在框体6内,下部面体状加热器71分别以接近由辊输送机构5输送的基板G的方式设置在由辊输送机构5输送的基板G的背面(下表面)侧。The heating mechanism 7 includes lower planar heaters 71 ( 71 a to 71 o ) as lower planar heating parts provided in the housing 6 along the transport path of the substrate G formed by the roller transport mechanism 5 , The lower planar heaters 71 are respectively provided on the back (lower surface) side of the substrate G conveyed by the roller conveyance mechanism 5 so as to be close to the substrate G conveyed by the roller conveyance mechanism 5 .

另外,加热机构8包括作为上部面体状加热部的上部面体状加热器81(81a~81h),该上部面体状加热部沿着基板G的由辊输送机构5构成的输送路径设置在框体6内,上部面体状加热器81分别以接近由辊输送机构5输送的基板的方式设置在由辊输送机构5输送的基板G的表面(上表面)侧。In addition, the heating mechanism 8 includes upper planar heaters 81 ( 81 a to 81 h ) as upper planar heating parts provided on the housing 6 along the conveyance path of the substrate G formed by the roller conveyance mechanism 5 . Inside, the upper planar heaters 81 are respectively provided on the surface (upper surface) side of the substrate G conveyed by the roller conveyance mechanism 5 so as to be close to the substrate G conveyed by the roller conveyance mechanism 5 .

在加热时基板G的应变较多的材料的情况下,按照与设置在背面(下表面)侧的下部面体状加热器71(71a~71o)相同的排列将表面(上表面)侧的上部面体状加热器81(81a~81h)与下部面体状加热器71(71a~71o)配置为上下对称,由此,也能够通过使上下的热分布均匀来降低应变。In the case of a material with a lot of strain on the substrate G during heating, the upper surface body on the front (upper surface) side is placed in the same arrangement as the lower surface body heaters 71 (71a to 71o) on the back (lower surface) side. The shape heaters 81 ( 81 a to 81 h ) and the lower surface body shape heaters 71 ( 71 a to 71 o ) are arranged in vertical symmetry, thereby also reducing strain by making the upper and lower heat distribution uniform.

下部面体状加热器71以在X方向上分割开的方式形成,其分别设置在辊构件50彼此之间而在Y方向上排列有多个(自Y方向上游侧起依次为71a~71o)。上部面体状加热器81例如安装于在框体6的X方向上相对的侧壁部而被支承。在更加详细地控制基板G的加热的情况下,上部面体状加热器81也可以以在X方向上分割开的方式形成。The lower planar heater 71 is formed so as to be divided in the X direction, and is respectively provided between the roller members 50 and arranged in a plurality in the Y direction (71a to 71o sequentially from the upstream side in the Y direction). The upper planar heater 81 is attached to and supported by, for example, side wall portions facing the housing 6 in the X direction. When controlling the heating of the substrate G in more detail, the upper planar heater 81 may be formed to be divided in the X direction.

为了排出框体6内的热量,在输送方向的中央部和两端部的上壁部分别设有排气口67,在排气口67上连接有排气装置68。于是,能够利用排气装置68经由排气口67对框体6内进行排气。排气口67例如既可以在X方向上形成有多个,也可以形成为沿X方向延伸的狭缝状。In order to dissipate the heat in the housing 6 , exhaust ports 67 are respectively provided at the central portion in the transport direction and the upper wall portions at both ends, and an exhaust device 68 is connected to the exhaust ports 67 . Then, the inside of the housing 6 can be exhausted by the exhaust device 68 through the exhaust port 67 . For example, the exhaust port 67 may be formed in plural in the X direction, or may be formed in a slit shape extending in the X direction.

通过将排气机构分别设置在框体6的Y方向两端部,在输入口61和输出口62处形成气帘,能够抑制外部的微粒从输入口61和输出口62进入到框体6内。另外,由于在与基板G的输送方向相同的方向上形成有朝向Y方向的排气流,在框体6的内部产生的微粒也不会产生紊乱气流就被排出,因此,能够防止微粒附着于基板G。By arranging exhaust mechanisms at both ends of the frame body 6 in the Y direction and forming air curtains at the input port 61 and the output port 62 , external particles can be prevented from entering the frame body 6 from the input port 61 and the output port 62 . In addition, since the exhaust flow toward the Y direction is formed in the same direction as the conveyance direction of the substrate G, the particles generated inside the frame body 6 are discharged without generating turbulent air flow, and therefore, it is possible to prevent the particles from adhering to the substrate G. Substrate G.

在图3中,排气口67配置在框体6的上部,但在欲增多热量、溶剂的排出量的情况、或者欲大量排出微粒的情况下,也可以在与上部排气口67对称的下部具有排气口。另外,框体6的上壁部能够在输送方向(Y方向)的中央位置开闭,易于对蒸发而附着于内壁63上的溶剂进行清洁、对内部进行维护。In Fig. 3, the exhaust port 67 is disposed on the top of the frame body 6, but if it is desired to increase the discharge amount of heat and solvent, or to discharge a large amount of particles, it may also be located symmetrically with the upper exhaust port 67. The lower part has an exhaust port. In addition, the upper wall portion of the frame body 6 can be opened and closed at the central position in the conveyance direction (Y direction), and it is easy to clean the evaporated solvent adhering to the inner wall 63 and maintain the inside.

接着,利用图6说明下部面体状加热器71的整体温度控制。利用控制装置101向热板控制器104下达设定的温度的命令。热板控制器104向热板电源105发出设定温度的命令。在这种情况下,热板电源分为105a、105b、105c、105d、105e、105f这6个区。下部面体状加热器71也在输送方向的Y轴上与热板控制器104相对应地按区配置有71a~71b、71c~71d、71e~71g、71h~71j、71k~71m、71n~71o这6个区。基板G的入口部、中央部、出口部和宽度方向的温度因气流和内壁的蓄热偏差而不同,因此,能够按区来对每个区的加热电力进行控制。Next, the overall temperature control of the lower planar heater 71 will be described with reference to FIG. 6 . The control device 101 issues a command to set the temperature to the hot plate controller 104 . The hot plate controller 104 issues commands to the hot plate power supply 105 to set the temperature. In this case, the hot plate power supply is divided into six zones of 105a, 105b, 105c, 105d, 105e, and 105f. The lower planar heaters 71 are also arranged in sections 71a-71b, 71c-71d, 71e-71g, 71h-71j, 71k-71m, 71n-71o corresponding to the hot plate controller 104 on the Y-axis in the conveying direction. These 6 districts. Since the temperatures of the inlet, center, outlet, and width direction of the substrate G are different due to the air flow and the heat storage deviation of the inner wall, the heating power for each zone can be controlled for each zone.

另外,热板电源105在下部面体状加热器71的宽度方向上与D、E、F的分割相对应地分割为S、T、U。例如,利用热板电源105a的S来控制下部面体状加热器71a~71b的D的区。同样,利用热板电源105a的T来控制下部面体状加热器71a~71b的E的区,利用热板电源105a的U来控制下部面体状加热器71a~71b的F的区。其他的热板电源105b~105f的S、T、U也与下部面体状加热器71c~71d、71e~71g、71h~71j、71k~71m、71n~71o的D、E、F相对应地进行控制。In addition, the hot plate power supply 105 is divided into S, T, and U corresponding to the divisions of D, E, and F in the width direction of the lower planar heater 71 . For example, the zone D of the lower planar heaters 71a to 71b is controlled by S of the hot plate power supply 105a. Similarly, T of the hot plate power supply 105a controls the E zone of the lower surface heaters 71a to 71b, and U of the hot plate power supply 105a controls the F zone of the lower surface heaters 71a to 71b. S, T, and U of other hot plate power supplies 105b to 105f are also performed correspondingly to D, E, and F of the lower surface heaters 71c to 71d, 71e to 71g, 71h to 71j, 71k to 71m, and 71n to 71o. control.

在此,利用图3说明加热处理装置28(31)的温度分布,为了排出框体6内的热量,在输送方向的中央部和两端部的上壁部分别设有排气口67,在排气口67上连接有排气装置68。另外,由于基板输入口61和基板输出口62开放,因此,即使对下部面体状加热器71和上部面体状加热器81施加相同的电力,中央部和两端部的温度也较低。另外,由图2所示的框体内壁63的蓄热导致基板G的X方向的两端部的温度升高。即使这样地施加相同的电力,温度也不相同,因此,需要能够在输送方向(Y轴)上按区来控制下部面体状加热器71和上部面体状加热器81。因此,下部面体状加热器71在基板G的宽度方向(X轴)上分割为D、E、F这3个区来进行精细的控制。Here, the temperature distribution of the heat treatment device 28 (31) will be described using FIG. An exhaust device 68 is connected to the exhaust port 67 . In addition, since the substrate input port 61 and the substrate output port 62 are opened, even if the same power is applied to the lower planar heater 71 and the upper planar heater 81, the temperatures at the center and both ends are low. In addition, the temperature of both end portions of the substrate G in the X direction increases due to the heat accumulation in the frame inner wall 63 shown in FIG. 2 . Even if the same electric power is applied in this way, the temperature is different, so it is necessary to be able to control the lower surface heater 71 and the upper surface heater 81 for each area in the conveyance direction (Y axis). Therefore, the lower planar heater 71 is divided into three areas of D, E, and F in the width direction of the substrate G (X-axis), and finely controlled.

图4是以截面表示下部面体状加热器71的一部分的俯视图。下部面体状加热器71的整体散热利用铝、不锈钢、陶瓷等散热体71p来进行。图4中的E的列的散热利用埋设在散热体71p中的互相平行的两根管状加热器71q来进行。温度利用传感器71t来探测,探测到的温度通过热板电源105被输入到热板控制器104。热板控制器104根据探测到的温度发出温度的升降的命令。热板电源105根据命令向热板供给电力。在散热体71p两端的D、F的列中,以与管状加热器71q之间空开空白区域(空间)71w、71x的方式配置有管状加热器71r、管状加热器71s,利用温度传感器71u来控制管状加热器71r的温度,利用温度传感器71v来控制管状加热器71s的温度。FIG. 4 is a plan view showing a part of the lower planar heater 71 in cross section. The overall heat dissipation of the lower planar heater 71 is performed by a radiator 71p of aluminum, stainless steel, ceramics, or the like. The heat dissipation in the column E in FIG. 4 is performed by two parallel tubular heaters 71q embedded in the radiator 71p. The temperature is detected by the sensor 71 t , and the detected temperature is input to the hot plate controller 104 through the hot plate power supply 105 . The hot plate controller 104 issues commands to raise and lower the temperature according to the detected temperature. The hot plate power supply 105 supplies power to the hot plate on command. In the rows of D and F at both ends of the heat sink 71p, the tubular heater 71r and the tubular heater 71s are arranged so as to open blank areas (spaces) 71w and 71x with the tubular heater 71q, and the temperature sensor 71u The temperature of the tubular heater 71r is controlled, and the temperature of the tubular heater 71s is controlled by a temperature sensor 71v.

在图4中,相对于两根管状加热器71q配置有一根管状加热器71r、71s。相对于与中央的E的列相对应的两根管状加热器71q,与两端的D、F的列相对应的一根管状加热器71r、71s供给较低的加热电力。其理由在于,利用框体6的侧壁部的蓄热效果,即使71r、71s的发热量较低也能保持温度。另外,管状加热器71q和管状加热器71r、71s也可以是相同个数的管状加热器。In FIG. 4, one tubular heater 71r, 71s is arrange|positioned with respect to two tubular heaters 71q. One tubular heater 71r, 71s corresponding to the rows D and F at both ends supplies lower heating power than the two tubular heaters 71q corresponding to the row E in the center. The reason for this is that the heat storage effect of the side wall portion of the frame body 6 can be used to maintain the temperature even if the calorific value of 71r and 71s is low. In addition, the tubular heater 71q and the tubular heaters 71r and 71s may be the same number of tubular heaters.

接着,利用图7说明热板的温度分布。在图7的(a)中,用于加热基板G的下部(背面)的下部面体状加热器71分为中央部的E列、两端部的D列和F列。利用上部面体状加热器81对基板G的上部(表面)进行加热。Next, the temperature distribution of the hot plate will be described using FIG. 7 . In (a) of FIG. 7 , lower planar heaters 71 for heating the lower portion (back surface) of the substrate G are divided into an E row at the center, and D and F rows at both ends. The upper portion (surface) of the substrate G is heated by the upper planar heater 81 .

图7的(b)是将对面体状加热器施加的电力图解化而成的图。在对作为下部面体状加热器71的中央部的E列施加的热电力和对两端部的D列和F列施加的热电力中,对中央部的E列施加的热电力被设定得较高。另外,在管状加热器71q的两端,在与管状加热器71r、71s之间存在加热电力的空白区域(空间)71w、71x。这一点也能够根据图4来确认。(b) of FIG. 7 is a graph diagrammatically illustrating the electric power applied to the planar heater. Of the thermoelectric power applied to the E row in the center as the lower planar heater 71 and the thermoelectric power applied to the D and F rows at both ends, the thermoelectric power applied to the E row in the center is set to higher. In addition, blank areas (spaces) 71w and 71x for heating power exist between the tubular heaters 71r and 71s at both ends of the tubular heater 71q. This point can also be confirmed from FIG. 4 .

图7的(c)是对实际的温度分布进行大致图解化而成的图。下部面体状加热器71的E列能保持与管状加热器71q的加热相对应的温度,但同时由导热使温度保持至空间71w、71x的大致一半区域。同样,管状加热器71r、71s的热量也由导热使温度保持至空间71w、71x的大致一半区域。由于管状加热器71r、71s的电力D、F是较低的电力,因此,温度只是Dh、Fh的量。但是,框体6的壁面部的蓄热63h发生导热,与Dh、Fh的热量相累计,成为与Eh的温度相同的温度。(c) of FIG. 7 is a diagram roughly illustrating an actual temperature distribution. The E row of the lower planar heater 71 can maintain the temperature corresponding to the heating of the tubular heater 71q, but at the same time, the temperature is maintained to approximately half of the spaces 71w and 71x by heat conduction. Similarly, the heat of the tubular heaters 71r and 71s is also maintained in approximately half of the space 71w and 71x by conduction. Since the electric powers D and F of the tubular heaters 71r and 71s are relatively low electric powers, the temperature is only the amount of Dh and Fh. However, the accumulated heat 63h in the wall portion of the frame body 6 conducts heat and is integrated with the heat of Dh and Fh to become the same temperature as the temperature of Eh.

空间71w和71x能够通过使管状加热器71r、71s向X方向移动来调整累计的温度。通过该调整,下部面体状加热器71的中央部、两端部成为平均化的温度。如图4所示,也可以由套式加热器(Sheath Heater)形成中央的管状加热器71q,由盒式加热器(Cartridge Heater)形成两端部的管状加热器71r、71s。In the spaces 71w and 71x, the integrated temperature can be adjusted by moving the tubular heaters 71r and 71s in the X direction. Through this adjustment, the central portion and both end portions of the lower planar heater 71 have an averaged temperature. As shown in FIG. 4, the central tubular heater 71q may be formed by a sheath heater, and the tubular heaters 71r and 71s at both ends may be formed by a cartridge heater.

在套式加热器的构造中,将螺旋状的发热线(镍铬合金线)通入到金属管中,发热线和金属管之间填充并密封有具有较高的电绝缘性和导热性的耐热绝缘材料,因此,能够防止产生微粒。电布线配置在加热器的两端。利用该构造埋设在下部面体状加热器、即中央的管状加热器71q的中心部。这样形成的套式加热器的振动、冲击等机械强度优良。In the structure of the jacket heater, the spiral heating wire (nickel-chromium alloy wire) is passed into the metal tube, and the heating wire and the metal tube are filled and sealed with high electrical insulation and thermal conductivity. Heat-resistant insulating material, therefore, can prevent the generation of particles. Electrical wiring is arranged at both ends of the heater. With this structure, it is embedded in the center of the lower planar heater, that is, the central tubular heater 71q. The thus formed jacket heater has excellent mechanical strength such as vibration and impact.

在盒式加热器的构造中,将卷绕成棒状(例如陶瓷)的发热线(镍铬合金线)插入到管(例如不锈钢)中,利用高导热性和高绝缘性优良的、例如氧化镁(MgO)将发热线和管之间密封。由于盒式加热器能够仅在单方向上布线,因此,能够向金属区的孔中插入加热器来进行加热,并且,也能够通过调节插入的长度来调整温度。另外,在盒式加热器中,通过向面体状加热器的两端部插入来调整与上述套式加热器之间的距离,能够调整产生的温度的均匀性。这样形成的盒式加热器适合作为经得住振动而不会产生微粒的加热器。In the construction of a cassette heater, a heating wire (nickel-chrome wire) wound into a rod shape (such as ceramic) is inserted into a tube (such as stainless steel), and a material such as magnesium oxide, which is excellent in high thermal conductivity and high insulation, is used. (MgO) seals between the heating wire and the tube. Since the cassette heater can be wired in only one direction, it is possible to insert the heater into the hole in the metal region for heating, and also to adjust the temperature by adjusting the length of insertion. In addition, in the cassette heater, the uniformity of the generated temperature can be adjusted by inserting into both ends of the planar heater to adjust the distance from the jacket heater. The thus formed cassette heater is suitable as a heater that can withstand vibration without generating particles.

这样,通过由套式加热器形成中央的管状加热器71q、并且由盒式加热器形成两端部的管状加热器71r、71s,在本发明的基板G是平板显示器用的玻璃基板为大于2米的尺寸的情况下,即使为了输送基板G而输送的振动激烈,也能够经得住振动。另外,平板显示器上的电路图案进行超微细化,尽量减少微粒的产生是重要的课题,对于这一点也较为理想。In this way, by forming the tubular heater 71q in the center by the jacket heater, and forming the tubular heaters 71r and 71s at both ends by the box heater, the substrate G of the present invention is a glass substrate for a flat panel display. In the case of a size of one meter, even if the vibration for conveying the substrate G is severe, the vibration can be withstood. In addition, ultra-miniaturization of the circuit pattern on the flat panel display and minimizing the generation of particles is an important issue, and it is also ideal for this point.

如图3所示,上部面体状加热器81包括配置在基板G的上表面(表面侧)的8个上部面体状加热器81a~81h。其中的上部面体状加热器81d和81e自上部面体状加热器81a~81c、81f~81h的输送方向宽度量的正中分割。其目的在于,框体6的上壁部在输送方向(Y方向)的中央位置开闭,进行维护、内部清洁。As shown in FIG. 3 , the upper planar heater 81 includes eight upper planar heaters 81 a to 81 h arranged on the upper surface (surface side) of the substrate G. As shown in FIG. Of these, the upper planar heaters 81d and 81e are divided from the middle of the conveyance direction width of the upper planar heaters 81a to 81c and 81f to 81h. The purpose is to open and close the upper wall portion of the frame body 6 at the center position in the transport direction (Y direction) to perform maintenance and internal cleaning.

图5是以截面表示上部面体状加热器81的一部分的俯视图。上部面体状加热器81与下部面体状加热器71的控制方法基本相同,但是在X方向上未分割。另外,在散热体81p中埋设有3根管状加热器81q。利用传感器81t来探测发热的温度。利用热板控制器104借助于图6中的热板电源105来控制。另外,上部面体状加热器81d和81e各埋设有一根管状加热器。FIG. 5 is a plan view showing a part of the upper planar heater 81 in cross section. The control method of the upper planar heater 81 is basically the same as that of the lower planar heater 71 , but it is not divided in the X direction. In addition, three tubular heaters 81q are embedded in the radiator 81p. The temperature of heat generation is detected by the sensor 81t. It is controlled by means of a hot plate controller 104 by means of a hot plate power supply 105 in FIG. 6 . In addition, one tubular heater is embedded in each of the upper planar heaters 81d and 81e.

以上,采用实施方式的加热处理装置,由于能够在输送基板G的同时进行加热处理,因此,能谋求缩短处理时间,并且,能够通过使气流的流动与基板G的输送方向相同来抑制产生紊乱气流,而且能够防止产生微粒于未然,另外,基于面体状加热器71、81的构造和热板控制器104,利用加热处理装置侧壁面的蓄热,能够实现节能和基板G的加热的均匀性。As described above, according to the heat treatment apparatus of the embodiment, since the heat treatment can be carried out while the substrate G is conveyed, the processing time can be shortened, and the generation of the turbulent airflow can be suppressed by making the flow of the airflow the same as the conveyance direction of the substrate G. , and can prevent the generation of particles before it happens. In addition, based on the structure of the planar heaters 71, 81 and the hot plate controller 104, energy saving and heating uniformity of the substrate G can be realized by utilizing the heat storage on the side wall surface of the heat treatment device.

接着,说明第2实施方式。另外,省略与上述实施方式相同的部分的说明,仅说明不同的部分。在第2实施方式中,如图8所示,在散热体71p中,将与基板G相对的面设为表面90,将与表面90相反的一面设为背面91。Next, a second embodiment will be described. In addition, the description of the same parts as those of the above-mentioned embodiment will be omitted, and only the different parts will be described. In 2nd Embodiment, as shown in FIG.

在第2实施方式中,在空间71w、71x中,在背面91上设有槽状的缺口92。缺口92从箭头K的方向看时配置为例如直线状。另外,缺口92的截面形状为四边形。通过这样设置缺口92,能够限制D、E、F列之间的导热,从而能够进一步使表面90中的温度分布均匀化。另外,该缺口92也能够用于散热。In the second embodiment, groove-shaped cutouts 92 are provided on the back surface 91 in the spaces 71w and 71x. The notch 92 is arranged, for example, in a linear shape when viewed from the direction of the arrow K. As shown in FIG. In addition, the cross-sectional shape of the notch 92 is a quadrangle. By providing the gaps 92 in this way, the heat conduction between the columns D, E, and F can be limited, so that the temperature distribution in the surface 90 can be further uniformed. In addition, the notch 92 can also be used for heat dissipation.

另外,缺口92的截面形状并不限定为四边形,也可以是图9所示那样的圆弧状。另外,缺口92的截面形状也可以是图10所示那样的三角形状。In addition, the cross-sectional shape of the notch 92 is not limited to a quadrangle, and may be an arc shape as shown in FIG. 9 . In addition, the cross-sectional shape of the notch 92 may be a triangular shape as shown in FIG. 10 .

缺口92的截面形状像四边形、三角形那样在缺口92的顶端存在角部时,在该角部导热易于不均匀。通过将这一点反过来利用而使缺口92的截面形状为四边形、三角形,能够使表面90中的温度分布均匀化。When the cross-sectional shape of the notch 92 has a corner such as a quadrangle or a triangle at the tip of the notch 92, heat conduction tends to be uneven at the corner. By utilizing this point in reverse and making the cross-sectional shape of the notches 92 quadrilateral or triangular, the temperature distribution on the surface 90 can be made uniform.

另外,使缺口92的截面形状为圆弧状,缺口92的顶端平缓地形成时,在该部分的导热易于均匀。也可以利用这一点而使缺口92的截面形状为圆弧状,能够使表面90中的温度分布均匀化。In addition, when the cross-sectional shape of the notch 92 is arcuate and the tip of the notch 92 is formed gently, the heat conduction in this part is easy to be uniform. This point can also be utilized to make the cross-sectional shape of the notch 92 arc-shaped, so that the temperature distribution in the surface 90 can be made uniform.

接着,说明第3实施方式。另外,省略与上述实施方式相同的部分的说明,仅说明不同的部分。在第3实施方式中,作业人员能够将管状加热器71r、71s自散热体71p取出或将其放入到散热体71p中。即,能够改变管状加热器71r、71s的相对于散热体71p的插入长度。在将管状加热器71r、71s相对于散热体71p拉出到近侧时,空间71w、71x扩大。另外,在将管状加热器71r、71s相对于散热体71p推入时,空间71w、71x变窄。Next, a third embodiment will be described. In addition, the description of the same parts as those of the above-mentioned embodiment will be omitted, and only the different parts will be described. In the third embodiment, a worker can take out the tubular heaters 71r and 71s from the radiator 71p or put them in the radiator 71p. That is, the insertion length of the tubular heaters 71r and 71s with respect to the radiator 71p can be changed. When the tubular heaters 71r, 71s are pulled out to the near side with respect to the radiator 71p, the spaces 71w, 71x expand. In addition, when the tubular heaters 71r and 71s are pushed into the radiator 71p, the spaces 71w and 71x are narrowed.

首先,将管状加热器71q、71r、71s的温度分别设定为使用的温度,进行升温。散热体71p温度上升,在散热体71p的温度稳定之后测量温度分布。于是,只要例如空间71w、71x的部分的温度低于其他部分的温度,作业人员就相对于散热体71p推入管状加热器71r、71s,使空间71w、71x缩窄。然后,在散热体71p的温度稳定之后,再次测量散热体71p的温度分布。重复这样的作业,调整管状加热器71r、71s的位置,使得散热体71p的温度均匀。通过做成该构成,能够使散热体71p的温度分布均匀化。First, the temperatures of the tubular heaters 71q, 71r, and 71s are set to respective temperatures to be used, and the temperatures are raised. The temperature of the radiator 71p rises, and the temperature distribution is measured after the temperature of the radiator 71p stabilizes. Then, for example, if the temperature of the space 71w, 71x is lower than that of other parts, the operator pushes the tubular heater 71r, 71s into the radiator 71p to narrow the space 71w, 71x. Then, after the temperature of the radiator 71p stabilized, the temperature distribution of the radiator 71p was measured again. Such operations are repeated, and the positions of the tubular heaters 71r and 71s are adjusted so that the temperature of the radiator 71p becomes uniform. With this configuration, the temperature distribution of the radiator 71p can be made uniform.

另外,采用本发明的加热处理装置,适合于像FPD用的玻璃基板那样基板特别大型的情况,但并不限定于此,也能够广泛地应用于半导体晶圆等其他基板的加热处理。In addition, the heat treatment apparatus of the present invention is suitable for particularly large substrates such as glass substrates for FPDs, but is not limited thereto, and can be widely used for heat treatment of other substrates such as semiconductor wafers.

附图标记说明Explanation of reference signs

G、基板;5、辊输送机构;6、框体7、加热机构;8、加热机构;50、辊构件;61、基板输入部;62、基板输出部;63、框体内壁;64、框体外壁;65、空气绝热层;66、绝热材料;71(71a~71o)、下部面体状加热器(下部面体状加热部);71p、散热体;71q~71s、管状加热器;71t~71v、温度传感器;71w、71x、空间;81(81a~81h)、上部面体状加热器(上部面体状加热部);101、控制装置;104、热板控制器;105、热板电源。G, substrate; 5, roller conveying mechanism; 6, frame body 7, heating mechanism; 8, heating mechanism; 50, roller member; 61, substrate input part; 62, substrate output part; 63, frame inner wall; 64, frame External wall; 65, air insulation layer; 66, heat insulating material; 71 (71a~71o), lower surface-shaped heater (lower surface-shaped heating part); 71p, radiator; 71q-71s, tubular heater; 71t-71v , temperature sensor; 71w, 71x, space; 81 (81a~81h), upper surface-shaped heater (upper surface-shaped heating part); 101, control device; 104, hot plate controller; 105, hot plate power supply.

Claims (9)

1.一种加热处理装置,其用于对基板进行加热处理,其特征在于,1. A heat treatment device, which is used for heat treatment of a substrate, characterized in that, 该加热处理装置包括:The heat treatment device includes: 输送路径,其用于将基板在水平方向上输送;a transport path for transporting the substrate in the horizontal direction; 框体,其以包围上述输送路径的方式设置,并且,在上述基板的输送方向的中央部和输送方向的两端部设有用于进行内部的排气的排气机构;A frame body is provided to surround the conveyance path, and an exhaust mechanism for exhausting the interior is provided at the center part and both ends of the conveyance direction of the substrate; 上部面体状加热部,其在上述输送路径的上部配置有多个;an upper surface body-shaped heating part, which is arranged in a plurality on the upper part of the above-mentioned conveying path; 下部面体状加热部,其在上述输送路径的下部配置有多个;a lower surface body-shaped heating unit, which is arranged in a plurality of lower parts of the above-mentioned conveying path; 上述上部面体状加热部及下部面体状加热部中的任一个加热部或两个加热部在上述输送路径的输送方向上被划分;Either one or both of the upper planar heating unit and the lower planar heating unit are divided in the conveying direction of the conveying path; 上述上部面体状加热部及下部面体状加热部中的至少下部面体状加热部被划分为在上述输送路径的宽度方向上的中央部和两端部;At least the lower planar heating part of the upper planar heating part and the lower planar heating part is divided into a central part and both end parts in the width direction of the transport path; 该加热处理装置形成为利用控制装置能够将上述两端部的温度控制得低于划分出的上述中央部的温度。This heat treatment apparatus is formed so that the temperature of the said both ends can be controlled lower than the temperature of the divided said central part by a control device. 2.根据权利要求1所述的加热处理装置,其特征在于,2. The heat treatment apparatus according to claim 1, wherein: 上述上部面体状加热部及下部面体状加热部中的至少一个加热部包括面体状的散热体、埋设在该散热体中的管状加热器。At least one of the upper planar heating unit and the lower planar heating unit includes a planar radiator and a tubular heater embedded in the radiator. 3.根据权利要求2所述的加热处理装置,其特征在于,3. The heat treatment apparatus according to claim 2, wherein: 在面体状加热部的宽度方向的中央部埋设第1管状加热器,在面体状加热部的宽度方向的两侧部分别埋设第2管状加热器和第3管状加热器,上述第2管状加热器及第3管状加热器是同种类的管状加热器。A first tubular heater is embedded in the central portion of the planar heating portion in the width direction, and a second tubular heater and a third tubular heater are respectively embedded in both sides of the planar heating portion in the width direction. and the third tubular heater are the same type of tubular heater. 4.根据权利要求2所述的加热处理装置,其特征在于,4. The heat treatment apparatus according to claim 2, wherein: 上述第1管状加热器的端部与上述第2管状加热器的端部、上述第1管状加热器的端部与第3管状加热器的端部在上述输送路径的宽度方向上以规定的距离分开。The end of the first tubular heater and the end of the second tubular heater, the end of the first tubular heater and the end of the third tubular heater are separated by a predetermined distance in the width direction of the transport path. separate. 5.根据权利要求4所述的加热处理装置,其特征在于,5. The heat treatment apparatus according to claim 4, wherein: 上述第1管状加热器是套式加热器,上述第2管状加热器及第3管状加热器是盒式加热器。The first tubular heater is a jacket heater, and the second tubular heater and the third tubular heater are cassette heaters. 6.根据权利要求1~5中任一项所述的加热处理装置,其特征在于,6. The heat treatment apparatus according to any one of claims 1 to 5, wherein: 上述框体的壁部中的至少一部分具有包括互相隔着空间地设置的内壁和外壁的双层壁构造,上述内壁和外壁之间的空间起到由将上述框体的内外绝热的绝热材料和空气构成的绝热层的作用。At least a part of the wall portion of the frame has a double-wall structure including an inner wall and an outer wall spaced apart from each other, and the space between the inner wall and the outer wall functions as an insulating material for insulating the inside and outside of the frame. The role of the insulating layer composed of air. 7.根据权利要求4所述的加热处理装置,其特征在于,7. The heat treatment apparatus according to claim 4, wherein: 面体状的上述散热体包括:The above-mentioned radiator in the shape of a plane body includes: 表面,其与进行加热处理的基板相面对;a surface facing the substrate to be heat-treated; 背面,其是面体状的上述散热体的与该表面相反的一侧的面;a back surface, which is the surface on the side opposite to the surface of the above-mentioned radiator in the form of a planar body; 缺口,其自该背面连续,设置在位于上述分开的端部之间的区域中。A notch, which is continuous from the back, is provided in the region between the above-mentioned separated ends. 8.一种加热处理装置,其用于对基板进行加热处理,其特征在于,8. A heat treatment device, which is used for heat treatment of a substrate, characterized in that, 该加热处理装置包括:The heat treatment device includes: 输送路径,其用于将基板在水平方向上输送;a transport path for transporting the substrate in the horizontal direction; 框体,其以包围上述输送路径的方式设置,并且,在上述基板的输送方向的中央部和输送方向的两端部设有用于进行内部的排气的排气机构;A frame body is provided to surround the conveyance path, and an exhaust mechanism for exhausting the interior is provided at the center part and both ends of the conveyance direction of the substrate; 上部面体状加热部,其在上述输送路径的上部配置有多个;an upper surface body-shaped heating part, which is arranged in a plurality on the upper part of the above-mentioned conveying path; 下部面体状加热部,其在上述输送路径的下部配置有多个;a lower surface body-shaped heating unit, which is arranged in a plurality of lower parts of the above-mentioned conveying path; 上述上部面体状加热部及下部面体状加热部在上述输送路径的输送方向上被划分;The upper planar heating unit and the lower planar heating unit are divided in the conveying direction of the conveying path; 上述上部面体状加热部及下部面体状加热部被划分为在上述输送路径的宽度方向上的中央部和两端部;The upper planar heating part and the lower planar heating part are divided into a central part and both end parts in the width direction of the conveyance path; 上述上部面体状加热部及下部面体状加热部在上述中央部和上述两端部的内部各自具有用于加热的加热器;The upper planar heating part and the lower planar heating part each have heaters for heating inside the central part and the two end parts; 上述中央部的加热器温度被设定为比上述两端部的加热器温度高的温度。The temperature of the heater at the central portion is set to be higher than the temperature of the heaters at the both ends. 9.根据权利要求8所述的加热处理装置,其特征在于,9. The heat treatment apparatus according to claim 8, wherein: 将上述中央部的加热器温度设定为比上述两端部的加热器温度高出规定值的温度,使得积蓄在上述框体中的热量传导到上述两端部而上述两端部的温度和上述中央部的温度成为相同的温度。The temperature of the heater at the central part is set to be higher than the temperature of the heaters at the two ends by a predetermined value so that the heat accumulated in the frame is conducted to the two ends, and the temperatures at the two ends and The temperature of the said central part becomes the same temperature.
CN2011103326127A 2010-11-16 2011-10-25 Heat treatment device Pending CN102468200A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010255469A JP5377463B2 (en) 2010-11-16 2010-11-16 Heat treatment device
JP2010-255469 2010-11-16

Publications (1)

Publication Number Publication Date
CN102468200A true CN102468200A (en) 2012-05-23

Family

ID=46071663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103326127A Pending CN102468200A (en) 2010-11-16 2011-10-25 Heat treatment device

Country Status (4)

Country Link
JP (1) JP5377463B2 (en)
KR (1) KR20120052871A (en)
CN (1) CN102468200A (en)
TW (1) TW201222706A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104281015A (en) * 2014-09-26 2015-01-14 京东方科技集团股份有限公司 Developing device and developing method
CN108987230A (en) * 2017-05-30 2018-12-11 东京毅力科创株式会社 Mounting table and plasma processing apparatus
TWI758029B (en) * 2020-12-24 2022-03-11 志聖工業股份有限公司 Self-cleaning conveying device and heating device comprising conveying device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5622701B2 (en) * 2011-10-13 2014-11-12 東京エレクトロン株式会社 Vacuum dryer
KR102559551B1 (en) * 2021-03-11 2023-07-27 주식회사 한국제이텍트써모시스템 Heater unit of heat treatment oven
KR102551053B1 (en) * 2021-05-12 2023-07-05 주식회사 한국제이텍트써모시스템 Heater unit of heat treatment oven
JP7465855B2 (en) * 2021-09-27 2024-04-11 芝浦メカトロニクス株式会社 Heat treatment device, loading/unloading tool, and method for forming organic film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193121A (en) * 1987-10-05 1989-04-12 Kawasaki Steel Corp Semiconductor wafer baking device
JP2000321755A (en) * 1999-05-17 2000-11-24 Hitachi Ltd Glass reticle heating method
CN100454482C (en) * 2005-12-06 2009-01-21 东京毅力科创株式会社 Heat treatment device and heat treatment method
US20100282168A1 (en) * 2007-12-27 2010-11-11 Katsushi Kishimoto Plasma processing apparatus, heating device for plasma processing apparatus, and plasma processing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193121A (en) * 1987-10-05 1989-04-12 Kawasaki Steel Corp Semiconductor wafer baking device
JP2000321755A (en) * 1999-05-17 2000-11-24 Hitachi Ltd Glass reticle heating method
CN100454482C (en) * 2005-12-06 2009-01-21 东京毅力科创株式会社 Heat treatment device and heat treatment method
US20100282168A1 (en) * 2007-12-27 2010-11-11 Katsushi Kishimoto Plasma processing apparatus, heating device for plasma processing apparatus, and plasma processing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104281015A (en) * 2014-09-26 2015-01-14 京东方科技集团股份有限公司 Developing device and developing method
CN104281015B (en) * 2014-09-26 2018-02-27 京东方科技集团股份有限公司 A kind of developing apparatus and developing method
CN108987230A (en) * 2017-05-30 2018-12-11 东京毅力科创株式会社 Mounting table and plasma processing apparatus
TWI758029B (en) * 2020-12-24 2022-03-11 志聖工業股份有限公司 Self-cleaning conveying device and heating device comprising conveying device

Also Published As

Publication number Publication date
JP2012109324A (en) 2012-06-07
JP5377463B2 (en) 2013-12-25
TW201222706A (en) 2012-06-01
KR20120052871A (en) 2012-05-24

Similar Documents

Publication Publication Date Title
CN102468200A (en) Heat treatment device
JP4341978B2 (en) Substrate processing equipment
JP4542577B2 (en) Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method
CN100521078C (en) Substrate cooling device and substrate cooling method
JP4531690B2 (en) Heat treatment device
JP4384686B2 (en) Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method
JP4813583B2 (en) Substrate processing equipment
JP4672538B2 (en) Heat treatment device
JP5208093B2 (en) Substrate processing apparatus, substrate processing method, and reduced pressure drying apparatus
KR20080060165A (en) Substrate processing equipment
JP4936567B2 (en) Heat treatment equipment
JP5314664B2 (en) Physical quantity measuring apparatus and physical quantity measuring method
JP4675401B2 (en) Substrate transfer device
JP2006245110A (en) Thermal processing equipment
JP4967013B2 (en) SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM RECORDING PROGRAM FOR EXECUTING THE SUBSTRATE PROCESSING METHOD
JP5400751B2 (en) Heat treatment apparatus and coating and developing apparatus provided with the same
JP5158066B2 (en) Coating and developing equipment
JP7520696B2 (en) Reduced pressure drying device
TWI791113B (en) Substrate processing apparatus and substrate processing method
JP4620536B2 (en) Substrate processing equipment
JP4028351B2 (en) Baking method and baking apparatus
JP5078180B2 (en) Substrate transfer device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120523