CN102456567A - Plasma dry etching method for contact hole - Google Patents
Plasma dry etching method for contact hole Download PDFInfo
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- CN102456567A CN102456567A CN201010510215XA CN201010510215A CN102456567A CN 102456567 A CN102456567 A CN 102456567A CN 201010510215X A CN201010510215X A CN 201010510215XA CN 201010510215 A CN201010510215 A CN 201010510215A CN 102456567 A CN102456567 A CN 102456567A
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- contact hole
- electric pole
- pole plate
- lower electrode
- plasma dry
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000001312 dry etching Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003100 immobilizing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 210000005056 cell body Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
The invention discloses a plasma dry etching method for a contact hole. The method comprises the following steps of: forming a photoetch pattern of the contact hole on a dielectric layer of a wafer; and performing plasma drying etching on the dielectric layer according to the photoetch pattern of the contact hole, wherein an upper plate electrode moves downwards from an initial position and stops at an end position in a plasma drying etching process. By the method, the etching accuracy of the contact hole can be improved.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of plasma dry lithographic method of contact hole.
Background technology
Along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, relates to the plasma dry etch process of contact hole in the semiconductor manufacture flow path.The principle of the plasma dry etching of contact hole is to make plasma carry out physical bombardment to the dielectric layer of wafer, thereby on dielectric layer, forms contact hole according to reticle pattern.
Fig. 1 is the sectional structure chart of prior art ionic medium soma method etching device.As shown in Figure 1, source power generator 101 provides source power, and the electric pole plate 103 that source power generator 101 connects in the process chamber 102, electric pole plate 103 excite the etching gas in the input process chamber 102 and produce plasma.Simultaneously, bias power generator 105 provides bias power, and lower electrode plate 104 links to each other with bias power generator 105, makes to form electrical potential difference between lower electrode plate 104 and the electric pole plate 103, moves downward to impel plasma.Usually; The position of lower electrode plate 104 is fixed; And be adjustable apart from d between electric pole plate 103 and the lower electrode plate 104, still, before the beginning etching, just regulating in advance between electric pole plate 103 and the lower electrode plate 104 apart from d; And in etching process, between electric pole plate 103 and the lower electrode plate 104 apart from no longer change of d.
During the plasma dry etching; Wafer W is placed on the lower electrode plate 104, and the air in the process chamber 102 are taken away and made to have satisfactory vacuum environment in the process chamber 102, to process chamber 102 in, imports etching gas then; The source power of source power generator 101 and the bias power of bias power generator 105 are set respectively; Make the electrical potential difference between electric pole plate 103 and the lower electrode plate 104 meet the requirements, last etching gas resolves into plasma under the effect of electric pole plate 103, under the effect of the electrical potential difference between electric pole plate 103 and the lower electrode plate 104; Plasma moves downward, thereby has realized the etching to wafer W.
Need to prove that plasma dry etching device of the prior art possibly also comprise other parts, because other parts and the present invention are irrelevant, so introduce in detail no longer one by one.
In the prior art; When contact hole is carried out etching; At first on dielectric layer, form the photoengraving pattern of contact hole, the photoengraving pattern according to contact hole carries out the plasma dry etching to dielectric layer then, in etching process; Remaining apart from d between electric pole plate 103 and the lower electrode plate 104 is constant, is about 2 to 3 centimetres apart from d between electric pole plate 103 and the lower electrode plate 104.
Yet along with development of semiconductor, the aperture of contact hole is come more little approximately, and hole depth is also bigger in some technology, that is to say, the depth-width ratio of contact hole is increasing, and this just makes getting through of contact hole need the stronger physical bombardment of plasma.The effective means that strengthens the physical bombardment degree is exactly to make as far as possible little apart from d between electric pole plate 103 and the lower electrode plate 104; For example, can suitably reduce in the prior art between the electric pole plate 103 and lower electrode plate 104 apart from d, such as can be with .5 centimetre of d stuck-at-; But; If the physical bombardment degree is more intense, stronger physical bombardment effect may make that photoengraving pattern partly peels off, thereby is difficult to accurately define the shape of contact hole.It is thus clear that the etching precision of contact hole is lower in the prior art.
Summary of the invention
In view of this, the present invention provides a kind of plasma dry lithographic method of contact hole, can improve the etching precision of contact hole.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of plasma dry lithographic method of contact hole; This method is applied in the plasma dry etching device; The plasma dry etching device comprises source power generator, process chamber, electric pole plate, lower electrode plate and bias power generator, wherein, provides the source power generator of source power to connect the electric pole plate in the process chamber; Electric pole plate excites etching gas to produce plasma; Provide the bias power generator of bias power to connect the lower electrode plate in the process chamber, wafer to be etched places on the lower electrode plate, and this method comprises:
On the dielectric layer of wafer, form the photoengraving pattern of contact hole;
Photoengraving pattern according to contact hole carries out the plasma dry etching to dielectric layer, and wherein, in the process of plasma dry etching, electric pole plate moves down and stops on the end position from initial position.
Said electric pole plate moves down from the initial position of 4.5 centimetres of the said lower electrode plates of distance, and stops on the end position of 1.5 centimetres of the said lower electrode plates of distance.
Said source power is 500 watts to 1500 watts, and said bias power is 1000 watts to 2500 watts, and the pressure in the said process chamber is that 20 person of outstanding talent's holders are to 100 person of outstanding talent's holders.
Said etching gas is perfluorobuttene C
4F
8Or perfluorobutadiene C
4F
6
Said etching gas further comprises: nitrogen N
2, oxygen O
2, carbon dioxide CO
2Or argon Ar.
The speed that moves down of said electric pole plate is 0.5 millimeter per second to 3 millimeter per second.
Said mobile mobile at the uniform velocity.
In the plasma dry lithographic method of a kind of contact hole provided by the present invention; At first on the dielectric layer of wafer, form the photoengraving pattern of contact hole; Photoengraving pattern according to contact hole carries out the plasma dry etching to dielectric layer then; Wherein, in the process of plasma dry etching, electric pole plate moves down and stops on the end position from initial position.It is thus clear that in etching process, the distance between electric pole plate and the lower electrode plate is not to keep immobilizing; But be in the dynamic changing process, like this, when the beginning etching; The physical bombardment effect of plasma is more weak, avoids photoengraving pattern to peel off, along with the carrying out of etching; Strengthen the physical bombardment effect of plasma gradually, avoid the big contact hole of depth-width ratio not get through, improved the etching precision of contact hole.
Description of drawings
Fig. 1 is the sectional structure chart of prior art ionic medium soma method etching device.
Fig. 2 is the flow chart of the plasma dry lithographic method of a kind of contact hole provided by the present invention.
Fig. 3 is the sketch map of the plasma dry lithographic method of a kind of contact hole provided by the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, scheme according to the invention is done to specify further.
Core concept of the present invention is: in the etching process of contact hole, the distance between electric pole plate and the lower electrode plate is not to keep immobilizing, but is in the dynamic changing process; Like this, when the beginning etching, the distance between electric pole plate and the lower electrode plate is distant; The physical bombardment effect of plasma is more weak, thereby avoids photoengraving pattern to peel off, along with the carrying out of etching; Distance between electric pole plate and the lower electrode plate gradually near; Strengthen the physical bombardment effect of plasma, avoided the big contact hole of depth-width ratio not get through, improved the etching precision of contact hole.
Fig. 2 is the flow chart of the plasma dry lithographic method of a kind of contact hole provided by the present invention.This method is applied in the plasma dry etching device of prior art; The plasma dry etching device comprises source power generator, process chamber, electric pole plate, lower electrode plate and bias power generator; Wherein, Provide the source power generator of source power to connect the electric pole plate in the process chamber; Electric pole plate excites etching gas to produce plasma, provides the bias power generator of bias power to connect the lower electrode plate in the process chamber, and wafer to be etched places on the lower electrode plate.
As shown in Figure 2, the plasma dry lithographic method of a kind of contact hole provided by the present invention may further comprise the steps:
Step 21, the photoengraving pattern of formation contact hole on the dielectric layer of wafer.
This step is identical with prior art, adopts photoetching process on dielectric layer, to form the photoengraving pattern of contact hole.
Step 22 is carried out the plasma dry etching according to the photoengraving pattern of contact hole to dielectric layer, and wherein, in the process of plasma dry etching, electric pole plate moves down and stops on the end position from initial position.
At first, those skilled in the art analyze the relation apart between the lithographic accuracy of d and contact hole between electric pole plate and the lower electrode plate through experiment.
Experiment is found; In etching process, if between electric pole plate and the lower electrode plate remain more than or equal to 4 centimetres apart from d the time, for example remain 4.5 centimetres; Then the physical bombardment degree of plasma is not very strong; The photoengraving pattern that consumes also seldom, and is still very low greater than the etching precision of the contact hole of the semiconductor device of-25 nanometers for key size deviation (CD bias) requirement, is difficult to satisfy the key size deviation requirement; And the aperture up and down of contact hole is inconsistent, and contact hole is shaped as the bowling sphere.In etching process; If between electric pole plate and the lower electrode plate remain less than 2 centimetres apart from d the time, for example remain 1.5 centimetres, then the physical bombardment degree of plasma is very strong; The photoengraving pattern that consumes is a lot; But only require etching precision greater than the contact hole of the semiconductor device of-35 nanometers than higher, and the aperture up and down of contact hole is inconsistent for key size deviation, contact hole be shaped as taper.In addition; Need to prove that key size deviation requires an important indicator for the semiconductor device manufacturing, and along with the development key dimensional discrepancy of technology generations requires increasing; For example for 90 nanometer technology generations; Key size deviation requires to be-15 nanometers, and for 40 nanometer technology generations, key size deviation requires to be-40 nanometers.
Can know through above-mentioned experimental result,, all can not improve the etching precision of contact hole if in etching process, remain constantly, no matter big or little apart from d between electric pole plate and the lower electrode plate apart from d.Therefore, the present invention proposes a kind of based on the contact hole plasma dry lithographic method apart from the d gradual change between electric pole plate and the lower electrode plate, in etching process, is not to keep immobilizing apart from d, but is in the dynamic changing process.
Fig. 3 is the sketch map of the plasma dry lithographic method of a kind of contact hole provided by the present invention.As shown in Figure 3; In the process of dry etching, electric pole plate down moves and stops at end position B from initial position A, when electric pole plate during at initial position A; Distance between electric pole plate and the lower electrode plate is d1; When electric pole plate during at end position B, the distance between electric pole plate and the lower electrode plate is d2, and wherein d1 is greater than d2.
Can find out by Fig. 3; When at initial position A, the distance between electric pole plate and the lower electrode plate is distant, why does not make when initial position that the distance between electric pole plate and the lower electrode plate is closer; At this moment because: if the physical bombardment degree is more intense; The physical bombardment effect meeting that plasma is stronger consumes photoresistance glue very soon, that is to say, can make that photoengraving pattern peels off; Thereby be difficult to accurately define the shape of contact hole, so when beginning etching contact hole, should not adopt very strong physical bombardment; And, can strengthen the physical bombardment degree of plasma gradually along with the carrying out of etching, avoid contact hole not get through.
In addition, need to prove that in the prior art, electric pole plate is adjustable, get final product so the control method of electric pole plate is identical with prior art among the present invention.
One group of preferable data of the present invention are provided below as a reference.
In the process of dry etching, electric pole plate moves down from the initial position apart from 4.5 centimetres of lower electrode plates, and stops on the end position apart from 1.5 centimetres of lower electrode plates.
Preferably, source power is 500 watts to 1500 watts, and bias power is 1000 watts to 2500 watts, and the pressure in the process chamber is that 20 person of outstanding talent's holders are to 100 person of outstanding talent's holders.
The main etching gas of contact hole is: perfluorobuttene (C
4F
8) or perfluorobutadiene (C
4F
6).
Also can further comprise nitrogen (N in the etching gas
2), oxygen (O
2), carbon dioxide (CO
2) or argon gas (Ar).
Electric pole plate move down speed be 0.5 millimeter per second (mm/s) to 3 millimeters per seconds (mm/s), preferably, said move mobile at the uniform velocity.
So far, this flow process finishes.
According to technical scheme provided by the present invention; At first on the dielectric layer of wafer, form the photoengraving pattern of contact hole; Photoengraving pattern according to contact hole carries out the plasma dry etching to dielectric layer then; Wherein, in the process of plasma dry etching, electric pole plate moves down and stops on the end position from initial position.It is thus clear that in etching process, the distance between electric pole plate and the lower electrode plate is not to keep immobilizing; But be in the dynamic changing process, like this, when the beginning etching; The physical bombardment effect of plasma is more weak, avoids photoengraving pattern to peel off, along with the carrying out of etching; Strengthen the physical bombardment effect of plasma gradually, avoid the big contact hole of depth-width ratio not get through, improved the etching precision of contact hole.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the plasma dry lithographic method of a contact hole; This method is applied in the plasma dry etching device, and the plasma dry etching device comprises source power generator, process chamber, electric pole plate, lower electrode plate and bias power generator, wherein; Provide the source power generator of source power to connect the electric pole plate in the process chamber; Electric pole plate excites etching gas to produce plasma, provides the bias power generator of bias power to connect the lower electrode plate in the process chamber, and wafer to be etched places on the lower electrode plate; It is characterized in that this method comprises:
On the dielectric layer of wafer, form the photoengraving pattern of contact hole;
Photoengraving pattern according to contact hole carries out the plasma dry etching to dielectric layer, and wherein, in the process of plasma dry etching, electric pole plate moves down and stops on the end position from initial position.
2. method according to claim 1 is characterized in that, said electric pole plate moves down from the initial position of 4.5 centimetres of the said lower electrode plates of distance, and stops on the end position of 1.5 centimetres of the said lower electrode plates of distance.
3. method according to claim 2 is characterized in that, said source power is 500 watts to 1500 watts, and said bias power is 1000 watts to 2500 watts, and the pressure in the said process chamber is that 20 person of outstanding talent's holders are to 100 person of outstanding talent's holders.
4. method according to claim 3 is characterized in that,
Said etching gas is perfluorobuttene C
4F
8Or perfluorobutadiene C
4F
6
5. method according to claim 4 is characterized in that said etching gas further comprises: nitrogen N
2, oxygen O
2, carbon dioxide CO
2Or argon Ar.
6. method according to claim 5 is characterized in that, the speed that moves down of said electric pole plate is 0.5 millimeter per second to 3 millimeter per second.
7. method according to claim 6 is characterized in that, and is said mobile mobile at the uniform velocity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010510215XA CN102456567A (en) | 2010-10-18 | 2010-10-18 | Plasma dry etching method for contact hole |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010510215XA CN102456567A (en) | 2010-10-18 | 2010-10-18 | Plasma dry etching method for contact hole |
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| Publication Number | Publication Date |
|---|---|
| CN102456567A true CN102456567A (en) | 2012-05-16 |
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ID=46039614
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|---|---|---|---|
| CN201010510215XA Pending CN102456567A (en) | 2010-10-18 | 2010-10-18 | Plasma dry etching method for contact hole |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200932936A (en) * | 2007-12-06 | 2009-08-01 | Intevac Inc | System and method for dual-sided sputter etch of substrates |
| TW200947494A (en) * | 2008-02-08 | 2009-11-16 | Lam Res Corp | A protective coating for a plasma processing chamber part and a method of use |
-
2010
- 2010-10-18 CN CN201010510215XA patent/CN102456567A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200932936A (en) * | 2007-12-06 | 2009-08-01 | Intevac Inc | System and method for dual-sided sputter etch of substrates |
| TW200947494A (en) * | 2008-02-08 | 2009-11-16 | Lam Res Corp | A protective coating for a plasma processing chamber part and a method of use |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121128 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20121128 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120516 |