CN102376832A - white light emitting diode - Google Patents
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- 238000010586 diagram Methods 0.000 description 3
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Abstract
Description
技术领域 technical field
本发明涉及一种白光发光二极管,尤其涉及一种具有不同色温以达到调光功能的白光发光二极管。The invention relates to a white light emitting diode, in particular to a white light emitting diode with different color temperatures to achieve dimming function.
背景技术 Background technique
发光二极管(Light Emitted Diode,LED)为一种半导体组件,主要通过半导体化合物将电能转换为光能,达到发光的效果,因此具有寿命长、稳定性高及耗电量小等特性。初期主要作为指示灯、交通号志或招牌广告牌用灯,随着白光发光二极管的出现,开始被应用于照明设备。A light emitting diode (Light Emitted Diode, LED) is a semiconductor component that mainly converts electrical energy into light energy through semiconductor compounds to achieve the effect of light emission. Therefore, it has the characteristics of long life, high stability and low power consumption. In the early days, it was mainly used as lights for indicator lights, traffic signals or signboards. With the emergence of white light-emitting diodes, it began to be used in lighting equipment.
传统白光发光二极管的制作方式是于蓝光发光二极管芯片上涂布黄色的钇铝石榴石系(Yttrium Aluminum Garnet,YAG)荧光粉,当该黄色荧光粉被蓝光激发后,其所产生的黄光与原先用于激发的蓝光进行混光而产生白光。The traditional manufacturing method of white light-emitting diodes is to coat yellow Yttrium Aluminum Garnet (YAG) phosphor powder on the chip of blue light-emitting diodes. When the yellow phosphor powder is excited by blue light, the yellow light produced by it and The blue light originally used for excitation is mixed to produce white light.
然而,由于蓝光发光二极管芯片与该黄色荧光粉所制作的白光发光二极管,蓝光占光谱的大部分,因此会有色温偏高与混光不均匀的现象。However, due to the blue light emitting diode chip and the white light emitting diode made of the yellow phosphor, the blue light accounts for most of the spectrum, so there will be high color temperature and uneven light mixing.
另外,亦有部分厂商将上述的白光发光二极管搭配红光发光二极管或绿光发光二极管进行混光,形成一光源模块,以中和该白光发光二极管色温偏高的问题。但由于个别颜色的发光二极管分别由不同的材料制成,其驱动电压也有所差异,造成电路设计上的困难度提高;且个别颜色的发光二极管的温度特性与寿命并不相同,使得不同光源模块的光色与使用周期亦有所差异,造成使用上的不便。In addition, some manufacturers mix the above-mentioned white light emitting diodes with red light emitting diodes or green light emitting diodes to form a light source module, so as to neutralize the problem of high color temperature of the white light emitting diodes. However, because the light-emitting diodes of individual colors are made of different materials, their driving voltages are also different, resulting in increased difficulty in circuit design; and the temperature characteristics and lifespan of light-emitting diodes of individual colors are not the same, making different light source modules There are also differences in light color and service cycle, which causes inconvenience in use.
发明内容 Contents of the invention
鉴于现有技术所述,为解决传统白光发光二极管色温偏高、混光不均匀及使用上便利度不佳等问题,本发明的一目的,在于提供一种可同时产生不同色温的白光,并混合该些白光以调整色温的白光发光二极管。In view of the prior art, in order to solve the problems of high color temperature of traditional white light-emitting diodes, uneven light mixing, and poor convenience in use, an object of the present invention is to provide a white light that can simultaneously generate different color temperatures, and A white LED that mixes these white lights to adjust the color temperature.
为达到上述目的,本发明提供一种白光发光二极管,包含一发光二极管芯片、一第一波长转换层及一第二波长转换层。To achieve the above object, the present invention provides a white light emitting diode, which includes a light emitting diode chip, a first wavelength conversion layer and a second wavelength conversion layer.
该发光二极管芯片包含一第一发光区间及一第二发光区间,该第一发光区间与该第二发光区间分别导通有至少二电流,该发光二极管芯片发出一蓝光。The light-emitting diode chip includes a first light-emitting interval and a second light-emitting interval. The first light-emitting interval and the second light-emitting interval are respectively conducted with at least two currents, and the light-emitting diode chip emits a blue light.
该第一波长转换层设置于该第一发光区间上,该第一波长转换层受蓝光激发后产生一第一转换光线,该第一转换光线并与蓝光混光成一暖白光线。The first wavelength conversion layer is arranged on the first light-emitting region, and the first wavelength conversion layer is excited by the blue light to generate a first converted light, and the first converted light is mixed with the blue light to form a warm white light.
该第二波长转换层设置于该第二发光区间上,该第二波长转换层受蓝光激发后产生一第二转换光线,该第二转换光线并与蓝光混光成一冷白光线;借由控制该些电流的电流量,以调整各该发光区间的发光强度,并达到白光发光二极管色温的调整。The second wavelength conversion layer is arranged on the second light-emitting region, and the second wavelength conversion layer is excited by the blue light to generate a second converted light, and the second converted light is mixed with the blue light to form a cool white light; by controlling The current amounts of these currents are used to adjust the luminous intensity of each luminous interval and achieve the adjustment of the color temperature of the white light emitting diode.
本发明的功效在于,本发明的白光发光二极管将一发光二极管芯片区分成至少二区间,并于不同的区间涂布有相异的波长转换层,使得该些区间同时产生不同色温的白光,再通过混合该些不同色温的白光,达到白光发光二极管色温的调整。其整体制备过程简便,且有效地解决因使用不同光色的发光二极管调整色温所造成的发光二极管使用寿命不等及驱动电压不同造成电路设计繁复的问题。The effect of the present invention is that the white light emitting diode of the present invention divides a light emitting diode chip into at least two sections, and different wavelength conversion layers are coated on different sections, so that these sections simultaneously generate white light with different color temperatures, and then The adjustment of the color temperature of the white light emitting diode is achieved by mixing the white lights with different color temperatures. The overall preparation process is simple, and effectively solves the problems of unequal service life of the light-emitting diodes and complicated circuit design caused by different driving voltages caused by using light-colored light-emitting diodes to adjust the color temperature.
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明 Description of drawings
图1为本发明第一实施例的白光发光二极管的俯视图;1 is a top view of a white light emitting diode according to a first embodiment of the present invention;
图2为本发明第一实施例的白光发光二极管的剖视图;2 is a cross-sectional view of a white light emitting diode according to a first embodiment of the present invention;
图3为本发明的发光二极管芯片的电极连接方式的俯视图;Fig. 3 is the top view of the electrode connection mode of the LED chip of the present invention;
图4为本发明的发光二极管芯片的电极连接方式的剖视图;Fig. 4 is the sectional view of the electrode connection mode of the LED chip of the present invention;
图5为本发明第二实施例的白光发光二极管的俯视图;及5 is a top view of a white light emitting diode according to a second embodiment of the present invention; and
图6为一色温坐标图。FIG. 6 is a color temperature coordinate diagram.
其中,附图标记Among them, reference signs
1 白光发光二极管1 white light emitting diode
10 蓝色发光二极管芯片10 blue LED chips
12 第一发光区间12 The first luminous interval
14 第二发光区间14 Second luminous interval
100 发光单元100 light units
102 导电单元102 conductive unit
20 第一波长转换层20 The first wavelength conversion layer
30 第二波长转换层30 second wavelength conversion layer
Lc 暖白光线Lc warm white light
Lw 冷白光线Lw cool white light
具体实施方式 Detailed ways
下面结合附图对本发明的结构原理和工作原理作具体的描述:Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:
配合参阅图1与图2,分别为本发明第一实施例的白光发光二极管的俯视图与剖视图。该白光发光二极管1包含有一蓝光发光二极管芯片10、一第一波长转换层20、一第二波长转换层30。Referring to FIG. 1 and FIG. 2 together, they are respectively a top view and a cross-sectional view of a white light emitting diode according to a first embodiment of the present invention. The white
该蓝光发光二极管芯片10发出一蓝光,该蓝光发光二极管芯片10包含一第一发光区间12及一第二发光区间14,且该第一发光区间12导通有一第一电流I1,该第二发光区间14导通有一第二电流I2。于本实施例中,该蓝光发光二极管芯片10包含十六个呈矩阵式排列的发光单元100,该第一发光区间12及该第二发光区间14则分别包含八个串联连接的发光单元100,但于实际使用上,并不以此为限。The blue light
配合参阅图3与图4,为本发明的白光发光二极管的电极连接方式的俯视图与剖视图。该第一发光区间12与该第二发光区间14分别包含多个发光单元100,各该发光单元100间是利用导电单元102串联连接,该串联连接方式是将多个发光单元100的正极对负极连接成串,使通过该些发光单元100的电流皆相等。Referring to FIG. 3 and FIG. 4 together, it is a top view and a cross-sectional view of the electrode connection method of the white light emitting diode of the present invention. The first light-
复参阅图1与图2,该第一波长转换层20设置于该第一发光区间12,该第一波长转换层20包含黄色光致发光荧光粉与红色光致发光荧光粉,可吸收短波长的蓝光而发出较长波长的光。当该第一发光区间12导通有该第一电流I1时,设置于该第一发光区间12的第一波长转换层20受蓝光激发后产生一第一转换光线L1,并且该第一转换光线L1与蓝光混光成一暖白光线Lw,其中该暖白光线是指在2670K至3800K的色温范围。Referring again to FIG. 1 and FIG. 2, the first
该第二波长转换层30设置于该第二发光区间14,该第二波长转换层30包含黄色光致发光荧光粉。当该第二发光区间14导通有该第二电流I2时,设置于该第二发光区间14的第二波长转换层30受蓝光激发后产生一第二转换光线L2,并且该第二转换光线L2与蓝光混光成一冷白光线Lc,其中该冷白光线是指在5000K至10000K的色温范围。The second
当该第一发光区间12与该第二发光区间14分别同时导通有第一电流I1与第二电流I2时,该第一发光区间12与该第二发光区间14间产生一混合该暖白光线Lw与该冷白光线Lc的中性白光线,其中该中性白光线是指在3800K至5000K的色温范围。When the first light-
并且,当该第一发光区间12的发光单元100的数目等于该第二发光区间14的发光单元100的数目时,通过控制流经该第一发光区间12与该第二发光区间14的该第一电流I1与该第二电流I2的电流量的大小也可达到控制该白光发光二极管1的色温的功能,其中该电流量的大小正比于该发光区间所发出光线的光强度的大小。当第一电流I1的电流量等于第二电流I2的电流量时,暖白光线Lw的光强度与该冷白光线Lc的光强度相等,该白光发光二极管1发出一中性白光线;当该第一电流I1大于该第二电流I2时,该暖白光线Lw的光强度大于该冷白光线Lc的光强度,该白光发光二极管1发出一偏暖白的中性白光线,或者当该第二电流I2为零时,该白光发光二极管1发出一暖白光线;当该第一电流I1小于该第二电流I2时,该暖白光线Lw的光强度小于该冷白光线Lc的光强度,该白光发光二极管1发出一偏冷白的中性白光线,或者当该第一电流I1为零时,该白光发光二极管1发出一冷白光线。In addition, when the number of light-
配合参阅图5,为本发明第二实施例的白光发光二极管的俯视图。本实施例的白光发光二极管与上述实施例的白光发光二极管最大的差别在于该蓝光发光二极管芯片10的发光区间12的分布方式。本实施例中的蓝光发光二极管芯片10的第一发光区间12与该第二发光区间14呈交错的设置,并于对应该第一发光区间12与该第二发光区间14设置该第一波长转换层20与该第二波长转换层30。当该第一发光区间12与该第二发光区间分别导通有该第一电流I1与第二电流I2时,该第一发光区间12与该第二发光区间14将对应产生该暖白光线Lw与冷白光线Lc,且该第一发光区间12与该第二发光区间14所产生的该暖白光线Lw与冷白光线Lc光线经混合后产生中性白光线。特别的是,由于第一发光区间12与该第二发光区间14呈交错设置,致使混合后的中性白光线的均匀度大幅提升。Referring to FIG. 5 , it is a top view of a white light emitting diode according to a second embodiment of the present invention. The biggest difference between the white light emitting diodes of this embodiment and the white light emitting diodes of the above embodiments lies in the distribution of the
配合参阅图6,为一色温坐标图。该色温坐标图分别色温6000K、色温4000K与色温3000K的位置做标示,其中色温6000K为冷白光线,色温4000K为中性白光线,色温3000K为暖白光线。Referring to FIG. 6 , it is a color temperature coordinate diagram. The color temperature coordinate diagram shows the positions of
下列表格为本发明的白光发光二极管的测量数据,于本实施例中,该白光发光二极管包含六个呈矩阵排列的发光单元,该第一发光区间及该第二发光区间分别包含三个串联连接的发光单元100,其中该第一发光区间及该第二发光区间分别流经第一电流及第二电流,且第一电流的电流量等于第二电流的电流量,以分别针对六个可发出不同色温的发光单元进行测量。其中编号1至6是针对上述六个发光单元进行色温的测量。表中编号1、2、3的发光单元的X、Y坐标分别为(0.3263,0.3397)、(0.3266,0.3394)、(0.3263,0.3398),其坐标位置分别对应色温6021K、5980K、6051K,供发出冷白光线。表中编号4、5、6的发光单元的X、Y坐标分别为(0.4404,0.4160)、(0.4410,0.4150)、(0.4422,0.4162),其坐标位置分别对应色温3012K、2990K、2982K,供发出暖白光线。表中编号7为组合六个不同色温的发光单元所组成的白光发光二极管的混光测量数据,该混光后的白光发光二极管的于色温坐标的位置为(0.3752,0.3733),该位置的对应色温为4108K,供发出一中性白光线。The following table is the measurement data of the white light emitting diode of the present invention. In this embodiment, the white light emitting diode includes six light emitting units arranged in a matrix, and the first light emitting section and the second light emitting section respectively include three series connected The light-emitting
综合以上所述,本发明的白光发光二极管将一蓝光发光二极管芯片区分成至少二区间,并于不同的区间涂布相异的波长转换层,使得该些区间通过至少二电流,利用该些电流的电流大小,选择性导通该些区间,以同时产生不同色温的白光,再通过混合该些不同色温的白光,达到白光发光二极管色温的调整,以增加其调光性。本发明整体制备过程简便,且有效地解决因使用不同光色的发光二极管调整色温所造成的发光二极管使用寿命不等及驱动电压不同造成电路设计繁复的问题。Based on the above, the white light emitting diode of the present invention divides a blue light emitting diode chip into at least two sections, and coats different wavelength conversion layers in different sections, so that at least two currents pass through these sections, and these currents are used According to the magnitude of the current, these intervals are selectively turned on to generate white light with different color temperatures at the same time, and then by mixing the white lights with different color temperatures, the color temperature of the white light-emitting diode can be adjusted to increase its dimming performance. The overall preparation process of the present invention is simple and convenient, and effectively solves the problems of unequal service life of light-emitting diodes and complicated circuit design caused by different driving voltages caused by using light-colored light-emitting diodes to adjust color temperature.
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.
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| US9095029B2 (en) | 2012-12-28 | 2015-07-28 | Industrial Technology Research Institute | Light source apparatus |
| CN106784259A (en) * | 2016-11-10 | 2017-05-31 | 深圳天珑无线科技有限公司 | A kind of multi color temperature mixing light source and preparation method thereof, mobile terminal |
| US9693408B2 (en) | 2012-12-28 | 2017-06-27 | Industrial Technology Research Institute | Light source apparatus |
| WO2017157073A1 (en) * | 2016-03-17 | 2017-09-21 | 天津三安光电有限公司 | Light-emitting diode and method for manufacturing same |
| US10039169B2 (en) | 2012-12-28 | 2018-07-31 | Industrial Technology Research Institute | Light source apparatus |
| CN110168722A (en) * | 2017-03-27 | 2019-08-23 | 首尔半导体株式会社 | Light emitting module |
| US10485070B2 (en) | 2012-12-28 | 2019-11-19 | Industrial Technology Research Institute | Light source apparatus and display apparatus |
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| US9693408B2 (en) | 2012-12-28 | 2017-06-27 | Industrial Technology Research Institute | Light source apparatus |
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| US10485070B2 (en) | 2012-12-28 | 2019-11-19 | Industrial Technology Research Institute | Light source apparatus and display apparatus |
| WO2017157073A1 (en) * | 2016-03-17 | 2017-09-21 | 天津三安光电有限公司 | Light-emitting diode and method for manufacturing same |
| CN106784259A (en) * | 2016-11-10 | 2017-05-31 | 深圳天珑无线科技有限公司 | A kind of multi color temperature mixing light source and preparation method thereof, mobile terminal |
| CN110168722A (en) * | 2017-03-27 | 2019-08-23 | 首尔半导体株式会社 | Light emitting module |
| CN111048493A (en) * | 2017-03-27 | 2020-04-21 | 首尔半导体株式会社 | Light emitting module |
| US11688836B2 (en) | 2017-03-27 | 2023-06-27 | Seoul Semiconductor Co., Ltd. | Light emitting module |
| CN111048493B (en) * | 2017-03-27 | 2024-06-11 | 首尔半导体株式会社 | Light emitting module |
| CN110168722B (en) * | 2017-03-27 | 2024-06-18 | 首尔半导体株式会社 | Light emitting module |
| US12237448B2 (en) | 2017-03-27 | 2025-02-25 | Seoul Semiconductor Co., Ltd. | Light emitting module |
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Application publication date: 20120314 |