CN102332903B - Switching circuit and switch testing system using same - Google Patents
Switching circuit and switch testing system using same Download PDFInfo
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- CN102332903B CN102332903B CN 201110219717 CN201110219717A CN102332903B CN 102332903 B CN102332903 B CN 102332903B CN 201110219717 CN201110219717 CN 201110219717 CN 201110219717 A CN201110219717 A CN 201110219717A CN 102332903 B CN102332903 B CN 102332903B
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Abstract
The invention discloses a switching circuit and a switch testing system using the same. The switching circuit comprises a first switch and a second switch which are provided between and are in series connection with a testing voltage source and a test point, wherein, control terminals of the first switch and the second switch are respectively connected with a first control signal, and a third switch which is provided between a common port of the first switch and the second switch and ground and is in series connection with the common port and ground, wherein, a control terminal of the third switch is connected with a second control signal; the firstsecond switch and the third switch are made to operate contrarily by the first control signal and the second control signal, and when the first switch and the second switch are closed, the third switch is conducted for ground connection. According to the invention, a grounding structure is introduced into the switching circuit, which enables the ratio of insulation resistance to conduction resistance when the switching circuit is closed to be very great, thereby reducing leakage current when a switch assembly is closed. According to the invention, reliable testing is realized; parallel connection of switch circuits with more grades can be realized; insulation target measuring of 100 M omega is reached.
Description
Technical field
The present invention relates to a kind of switching circuit, especially relate to a kind of introduction ground structure, have high impedance and make the less switching circuit of leakage current and the switch test system that uses switching circuit to realize in when cut-off.
Background technology
Switching circuit is widely used as among the various testing tools of circuit board fabrication.Because of the open circuit leakage current of switch module, the performance of its test high resistant (insulation impedance) is subject to number of test points.In existing design, use mechanical contacts relay (Relay) or solid-state module as switching circuit.Relay with the inert gas of general atmosphere, filling or vacuum as the electric medium that opens circuit.Solid-state circuit then with semi-conductive junction or passage as the electric medium that opens circuit.
Although relay has good release property, by general use on the switching system of electronic measuring instrument.Simultaneously, because commercial Application requires more and more faster speed, more and more higher subordinate's density, and also shorten at a high speed the time lifetime of mechanical contacts; Relay is also in the more and more difficult design that imports switching system, rise and generation be the solid-state switch assembly.
Switch test system as shown in Figure 1, several switching circuits are connected in parallel, and each switching circuit comprises high-side switch SW
XHWith low side switch SW
XL, and high-side switch SW
XHWith low side switch SW
XLBe test point P
XWherein, 1≤X≤n, and X is integer.Therefore, actual current sensor is by target current to be measured and leakage current I
LeakSummation, i.e. Is=I
1+ I
2+ I
3+ I
4+ ..+I
n
In conjunction with shown in Figure 2, the master switch n=4002 that counts, testing resistance R
TBe connected to test point P
3With test point P
4Between, SW
3HAnd SW
4HConducting; The leakage current I that allows the switch circuit end
LeakOnly have ten thousand of target high resistant electric current to be measured/, i.e. I
4=10000 * I
Leak, be convenience of calculation, can ignore I
3, that is: Is ≈ I
4+ (n – 2) * I
Leak≈ I
4+ 0.4I
4=1.4I
4
Following formula could see, the measurement result of high resistant will have 40% error! Add tester configuration and other loops, error will be larger.Because the test combination of determinand and condition are unfixing, do not allow the software compensation that is easy to do.Because the interference of leakage current has caused the clear capacity loss of instrument solution for the current, namely using software compensation also is the declaration of surperficial specification, and the ability of reality is not had help.
Summary of the invention
The switch test system that the present invention proposes a kind of switching circuit and uses switching circuit to consist of, by introducing ground structure, have high impedance and make leakage current less in when cut-off, the large and inaccurate technical problem of testing impedance of leakage current when having solved current switch circuit and having cut-off.
The present invention adopts following technical scheme to realize: a kind of switching circuit comprises: be serially connected in the first switch and second switch between test voltage source and the test point, the first switch is connected control end and is connected respectively the first control signal with second switch; Be serially connected in the common port of the first switch and second switch and the 3rd switch between the ground, the control end of the 3rd switch connects the second control signal; By control the first control signal, the second control signal makes the first switch/second switch and the 3rd switch inverse operation, and when the first switch and second switch all end, the 3rd switch conduction ground connection.
Preferably, the first switch, second switch and the 3rd switch are optocoupler; The input that the control end of the first switch is connected with second switch that control end links to each other, input connecting test voltage source, output connect second switch, and the output connecting test point of second switch; Be connected with the output of the first switch after the output head grounding of the 3rd switch, current-limiting resistance of input serial connection.
Preferably, the first switch, second switch and the 3rd switch are MOS transistor; Source electrode, grid that the source electrode connecting test voltage source of the first switch, drain electrode connect second switch are connected with the grid of second switch and are connected in series bias control circuit and connect the first control signal afterwards, and the drain electrode connecting test point of second switch; The grid of the 3rd switch is connected with the drain electrode of the first switch after connecting the second control signal, source ground, current-limiting resistance of drain electrode serial connection.
The present invention also proposes following technical scheme: a kind of switching circuit comprises: be serially connected in the high-side switch circuit between high side test voltage source and the test point; Be serially connected in the low side switch circuit between downside test voltage source and the test point; Be respectively applied to control high side control signal and the downside control signal of high-side switch circuit, low side switch circuit; Wherein, the high-side switch circuit comprises: be serially connected in the first high-side switch and the second high-side switch between high side test voltage source and the test point, the first high-side switch be connected the control end of high-side switch and connect respectively high side control signal; Be serially connected in the common port of the first high-side switch and the second high-side switch and the third high side switch between the ground, high side inverter of control end serial connection of third high side switch connects high side test voltage source; When the first high-side switch and the second high-side switch all end, third high side switch conduction ground connection; Wherein, the low side switch circuit comprises: be serially connected in the first low side switch and the second low side switch between downside test voltage source and the test point, the first low side switch be connected the control end of low side switch and connect respectively the downside control signal; Be serially connected in the common port of the first low side switch and the second low side switch and the third high side switch between the ground, downside inverter of control end serial connection of third high side switch connects downside test voltage source; When the first low side switch and the second low side switch all end, the 3rd low side switch conducting ground connection.
Preferably, the first high-side switch, the second high-side switch and third high side switch are optocoupler, the control end of the first high-side switch be connected the input that control end links to each other, input connects high side test voltage source, output connects the second high-side switch of high-side switch, and the output connecting test point of the second high-side switch is connected with the output of the first high-side switch after the output head grounding of third high side switch, current-limiting resistance of input serial connection.
Preferably, the first low side switch, the second low side switch and the 3rd low side switch are optocoupler, the control end of the first low side switch and the input of being connected that the control end of low side switch links to each other, input connecting test point, output connect the second low side switch, and the output of the second low side switch connects downside test voltage source, is connected with the output of the first low side switch after the output head grounding of the 3rd low side switch, current-limiting resistance of input serial connection.
Preferably, the first high-side switch, the second high-side switch and third high side switch are MOS transistor; The source electrode of the first high-side switch connects high side test voltage source, source electrode, the grid of connection the second high-side switch that drains are connected with the grid of the second high-side switch and be connected in series high lateral deviation pressure-controlled circuit connects high side control signal afterwards, and the drain electrode connecting test point of the second high-side switch; Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of third high side switch connects high side inverter are connected with the drain electrode of the first high-side switch afterwards.
Preferably, the first low side switch, the second low side switch and the 3rd low side switch are MOS transistor; The source electrode of the first low side switch and the drain electrode of the second low side switch be connected, drain connecting test point, grid is connected with the grid of the second low side switch, and the source electrode of the second low side switch connects downside test voltage source; The grid of the first low side switch all is connected in series the downside bias control circuit with the grid of the second low side switch and is connected the downside control signal afterwards, and the drain electrode connecting test point of the second low side switch; Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd low side switch connects the downside inverter are connected with the source electrode of the first low side switch afterwards.
Preferably, the downside bias control circuit comprises: emitter connects the first downside control switch of high side test voltage source, the grid, the base stage that connect the first low side switch after its collector series connection the one RC oscillating circuit are connected in series the drain electrode that the 2nd RC oscillating circuit connects the second downside control switch afterwards, and the source ground of the second downside control switch, grid connect the downside control signal.
The present invention also proposes following technical scheme: a kind of switch test system, and described switch test system comprises: several described switching circuits, and each switching circuit is connected in parallel.
Compared with prior art, the present invention has following beneficial effect:
Switching circuit of the present invention is introduced ground structure, makes the insulation resistance R of switch module when cut-off in the switching circuit
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio become very large, reduce the leakage current of switch module in when cut-off with this.Therefore, control logic of the present invention and cost are also relatively high, but the realization of switching circuit is more reliable, and can realize more multi-level switching circuit (test point of greater number namely can be set in a switching circuit) in parallel, reaches the insulation target measurement of 100M Ω.
Description of drawings
Fig. 1 is the electrical block diagram of existing switch test system;
Fig. 2 is testing resistance R of existing switch test system test
TConnection diagram;
Fig. 3 A and Fig. 3 B are respectively the basic circuit of switching circuit and the schematic diagram of equivalent electric circuit;
Fig. 4 A and Fig. 4 B are respectively the basic circuit of improved switching circuit and the schematic diagram of equivalent electric circuit;
Fig. 5 is the electrical block diagram of switching circuit the first embodiment of the present invention;
Fig. 6 is the electrical block diagram of switching circuit the second embodiment of the present invention.
Embodiment
In the switching system with a plurality of paralleling switch assemblies, solid-state switch determines the high resistance measurement ability of whole switching circuit at insulation resistance or the leakage current of cut-off when (OFF) in each switch module.
Be the basic circuit schematic diagram of switch shown in Fig. 3 A, voltage is power supply and solid-state switch SW and the resistance R of V
LForm the loop.The equivalent electric circuit of switch open circuit insulation resistance shown in Fig. 3 B, wherein, the leakage current I of solid-state switch SW
Leak_A=V/ (R
Off+ R
L), R
OffInsulation resistance when being solid-state switch SW cut-off.
Wherein, R
L=0 o'clock leakage current is maximum, for:
I
leak_A==V/R
off （1）
Further, be the basic circuit schematic diagram of improvement switch shown in Fig. 4 A, solid-state switch SW among Fig. 3 A is developed into all identical solid-state switch SW of 3 structures and impedance operator
A, SW
BAnd SW
C, solid-state switch SW
AWith solid-state switch SW
BSeries connection, and solid-state switch SW
AWith solid-state switch SW
BCommon port connect and resistance R
LThe solid-state switch SW that is arranged in parallel
C
Fig. 4 B is the equivalent electric circuit of solid-state switch shown in Fig. 3 A when open circuit.Each solid-state switch SW
A, SW
BAnd SW
CIdentical impedance operator is arranged, the insulation resistance R during cut-off
Off, the resistance R during conducting (ON)
On, then flow through solid-state switch SW
AElectric current I a=V/ (R
Off+ R
On// (R
Off+ R
L)), and leakage current (flows through resistance R
LElectric current) I
Leak_B=Ia * R
On/ (R
On+ R
Off+ R
L).
When allowing RL=0, Ia=V/ (R
Off+ R
On//R
Off), the leakage current of this moment is maximum, for:
I
leak_B=Ia×R
on/(R
on+R
off) （2）
Because R
OffR
On, (R
Off+ R
On//R
Off) ≈ R
OffSo,, can draw in conjunction with following formula (1) and (2):
Ia≈V/R
off≈I
leak_A （3）
I
leak_B≈I
leak_A×R
on/(R
on+R
off) （4）
Because the R of solid-state switch
OnMuch smaller than R
Off, suppose: R
Off/ R
On=10
8, then:
I
leak_B≈I
leak_A/10
8 （5）
Can find out from formula (4), utilize the insulation resistance R of floatless switch when cut-off
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio, the leakage current of switching circuit cut-off will reduce greatly, thus the switching circuit cutoff performance greatly promotes.
Therefore, the invention reside in the switching circuit that an improvement is provided, (middle introducing ground connection configuration makes the insulation resistance R of switch module when cut-off in the switching circuit at the switching circuit of script suspension joint
OffResistance R during with conducting (ON)
On(that is: R
Off/ R
On) ratio become very large, reduce the leakage current of switch module in when cut-off with this.
It needs to be noted that indication switch module of the present invention can for solid-state switch or other switches, be preferably solid-state switch.
The switching circuit that the present invention proposes is mainly used in having the automated test device (ATE) of the Electric connection characteristic of larger amt test point, for example is used for the test machine that test PCB, FPC open short circuit, silver-colored slurry, carbon film, touch screen ITO circuitous resistance.
The circuit diagram of the first embodiment of the switching circuit that proposes for the present invention as shown in Figure 5.Some grades switching circuit is connected in parallel, and consists of similar switching system shown in Figure 1.Wherein, switch module adopts optocoupler (Optical Couple, OC).
The switching circuit of every one-level has identical structure, comprising: by the high-side switch circuit of high side control signal CnP control; Low side switch circuit by downside control signal CnN control; And the common port of high-side switch circuit and low side switch circuit is test point Tn.Some grades switching circuit is connected in parallel by high side control signal CnP, downside control signal CnN respectively.
Wherein, the high-side switch circuit comprises: the first high-side switch PAn that is connected in series, the second high-side switch PBn; Input is connected to the high side inverter UnP of the high side MOS control end of the high side control signal CnP of input; The third high side switch P Cn that is connected with the output of high side inverter UnP with control end, connect the first high-side switch PAn behind the input of the third high side switch P Cn serial connection current-limiting resistance Rp and be connected the common port (that is: connect simultaneously the output of the first high-side switch PAn and the input of the second high-side switch PBn) of high-side switch PBn, the output head grounding of third high side switch P Cn.
When the high side control signal CnP of input is useful signal, the first high-side switch PAn and the equal conducting of the second high-side switch PBn, owing to high side inverter UnP is anti-phase for invalid signals makes third high side switch P Cn cut-off with high side control signal CnP, the high-side switch circuit is equivalent to conducting state.When the high side control signal CnP of input is invalid signals, the first high-side switch PAn and the second high-side switch PBn all end, third high side switch P Cn conducting ground connection, the high-side switch circuit is equivalent to cut-off state, because third high side switch P Cn conducting ground connection, so that the insulation resistance of high-side switch circuit when cut-off state is large especially, thereby the leakage current that the first high-side switch Pan is produced is minimum, reaches the purpose that the leakage current that stops the first high-side switch PAn enters test point Tn by the second high-side switch PBn.
The low side switch circuit comprises: the first low side switch NAn that is connected in series, the second low side switch NBn; Input is connected to the downside inverter UnN of the downside MOS control end of input downside control signal CnN; The 3rd low side switch NCn that is connected with the output of downside inverter UnN with control end, connect the first low side switch NAn behind the input of the 3rd low side switch NCn serial connection current-limiting resistance Rp and be connected the common port (that is: connect simultaneously the output of the first low side switch NaN and the input of the second low side switch NBn) of low side switch NBn, the output head grounding of the 3rd low side switch NCn.
The operation principle of low side switch circuit and high-side switch circuit are similar, by providing synchronously high side control signal CnP and downside control signal CnN is useful signal or is invalid signals, namely can realize stoping leakage current to enter test point Tn.
In addition, the common port of high-side switch circuit and low side switch circuit is the output of the second high-side switch PBn and the input of the first low side switch NaN.
The input of the second high-side switch PBn connects high side test voltage source V P, and the output of the second low side switch NBn connects downside test voltage source VN, and high side test voltage source V P, downside test voltage source VN are according to the adjustable variation of test control program.
The first high-side switch PAn, the second high-side switch PBn, third high side switch P Cn, the first low side switch NAn, the second low side switch NBn and the 3rd low side switch NCn are structure, optocoupler that model is identical with impedance operator.The advantage of optocoupler is processing ease, and logic and the high-tension load applications of especially isolating low pressure are very convenient; Shortcoming is that reaction speed is slower than monomer assembly.
The circuit diagram of the second embodiment of the switching circuit that proposes for the present invention as shown in Figure 6.Some grades switching circuit is connected in parallel, and consists of similar switch test system shown in Figure 1.Wherein, switch module adopts transistor.
Specifically, similar with Fig. 5, comprise high-side switch circuit and low side switch circuit at the switching circuit of n level.Wherein, the high-side switch circuit comprises: source electrode connects the first high-side switch QnPA of high side test voltage source V P, the drain electrode of the first high-side switch QnPA connects the source electrode of the second high-side switch QnPB, the drain electrode of the second high-side switch QnPB is test point Tn, and the grid of the first high-side switch QnPA is with to be connected the grid of high-side switch QnPB in parallel and be connected with the high side control signal CnP of input by a high lateral deviation pressure-controlled circuit; Be connected in the grid of the first high-side switch QnPA and the first Zener diode (Zener Diode) DPn and the first resistance R Pn of high side MOS control end VGSP in parallel; And high side control signal CnP connects third high side switch QnPC by high side inverter UnP, connects the drain electrode of the first high-side switch QnPA after the source ground of this third high side switch QnPC, current-limiting resistance Rp of drain electrode serial connection.
The first high-side switch QnPA, the second high-side switch QnPB are the PMOS transistor, and third high side switch QnPC is nmos pass transistor.
Wherein, high lateral deviation pressure-controlled circuit comprises: the high side control switch QnP1 that connects high side control signal CnP, this high side control switch QnP1 is NMOS, and its grid connects the grid that high side control signal CnP, source ground, RC oscillating circuit that is made of with Capacitance parallel connection resistance of drain electrode serial connection connect the first high-side switch QnPA.
The low side switch circuit comprises: the first low side switch QnNA of grid parallel connection and the second low side switch QnNB, the drain electrode that the drain electrode connecting test point Tn of the first low side switch QnNA, source electrode connect the second low side switch QnNB, and the source electrode of the second low side switch QnNB connects downside test voltage source VN; The grid of the first low side switch QnNA be connected downside bias control circuit of grid serial connection of low side switch QnNB and be connected with the downside control signal CnN of input; Be connected in the grid of the first low side switch QnNA and the second Zener diode (Zener Diode) DNn and the second resistance R Nn of downside MOS control end VGSN in parallel; And downside control signal CnN connects the 3rd low side switch QnNC by downside inverter UnN, connects the source electrode of the first low side switch QnNA after the source ground of the 3rd low side switch QnNC, current-limiting resistance Rp of drain electrode serial connection.
The first low side switch QnNA, the second low side switch QnNB and the 3rd low side switch QnNC are nmos pass transistor.
Wherein, the downside bias control circuit comprises: emitter connects the first downside control switch QnN1 of high side test voltage source V P, it is positive-negative-positive bipolar junction transistor (Bipolar Junction Transistor, BJT), RC oscillating circuit that is made of with Capacitance parallel connection resistance of the collector series connection of the first downside control switch QnN1 connects the grid of the first low side switch QnNA, the 2nd RC oscillating circuit that is made of with Capacitance parallel connection resistance of base stage serial connection connects the drain electrode of the second downside control switch QnN2, the second downside control switch QnN2 is NMOS, its source ground, grid connects downside control signal CnN.
The first Zener diode PNn, the second Zener diode DNn be used for guaranteeing respectively the grid of the grid of grid, the first low side switch QnNA of the grid of the first high-side switch QnPA and the second high-side switch QnPB and the second low side switch QnNB all obtains specified bias voltage can conducting.
In addition, high side MOS control end VGSP and downside MOS control end VGSN can be connected to respectively high side test voltage source V P and downside test voltage source VN, also can be designed to independent bias circuit and drive effect to reach better MOSFET.
Similar with Fig. 6, the first high-side switch QnPA/ the second high-side switch QnPB does opposite conducting and cut-off action with third high side switch QnPC, and the first low side switch QnNA/ the second low side switch QnNB does opposite conducting and cut-off action with the 3rd low side switch QnNC.
The first high-side switch QnPA/ the second high-side switch QnPB all ends, third high side switch QnPC conducting ground connection, the high-side switch circuit is equivalent to cut-off state, because third high side switch P Cn conducting ground connection, so that the insulation resistance of high-side switch circuit when cut-off state is large especially, thereby the leakage current that the first high-side switch Pan is produced is minimum, reaches the purpose that the leakage current that stops the first high-side switch PAn enters test point Tn by the second high-side switch PBn.Same, the first low side switch QnNA/ the second low side switch QnNB all ends, the 3rd low side switch QnNC conducting ground connection, the low side switch circuit is equivalent to cut-off state, because the 3rd low side switch QnNC conducting ground connection, so that the insulation resistance of low side switch circuit when cut-off state is large especially, thereby the leakage current that the first high-side switch QnPA/ is produced is minimum, reaches the purpose that the leakage current that stops the first high-side switch PAn enters test point Tn by the second high-side switch PBn.
The present invention compares with existing switching circuit illustrated in figures 1 and 2, although existing switching circuit has advantages of that circuit structure and the simple intuition of control logic, easily maintenance, cost are relatively low, switching circuit is difficult to surmount reliably the insulation target upper limit of 20M Ω when having the huge test point of quantity and be applied to test macro.And switching circuit of the present invention is introduced ground structure, control logic and cost are also relatively high, but the realization of switching circuit is more reliable, and can realize that more multi-level switching circuit (test point of greater number namely can be set in a switching circuit) in parallel reaches the insulation target measurement of 100M Ω.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a switching circuit is characterized in that, comprising:
Be serially connected in the first switch and second switch between test voltage source and the test point, the first switch is connected control end and is connected respectively the first control signal with second switch;
Be serially connected in the common port of the first switch and second switch and the 3rd switch between the ground, the control end of the 3rd switch connects the second control signal;
By control the first control signal, the second control signal makes the first switch/second switch and the 3rd switch inverse operation, and when the first switch and second switch all end, the 3rd switch conduction ground connection.
2. described switching circuit according to claim 1 is characterized in that, the first switch, second switch and the 3rd switch are optocoupler;
The input that the control end of the first switch is connected with second switch that control end links to each other, input connecting test voltage source, output connect second switch, and the output connecting test point of second switch;
Be connected with the output of the first switch after the output head grounding of the 3rd switch, current-limiting resistance of input serial connection.
3. described switching circuit according to claim 1 is characterized in that, the first switch, second switch and the 3rd switch are MOS transistor;
Source electrode, grid that the source electrode connecting test voltage source of the first switch, drain electrode connect second switch are connected with the grid of second switch and are connected in series bias control circuit and connect the first control signal afterwards, and the drain electrode connecting test point of second switch;
The grid of the 3rd switch is connected with the drain electrode of the first switch after connecting the second control signal, source ground, current-limiting resistance of drain electrode serial connection.
4. a switching circuit is characterized in that, comprising:
Be serially connected in the high-side switch circuit between high side test voltage source and the test point;
Be serially connected in the low side switch circuit between downside test voltage source and the test point;
Be respectively applied to control high side control signal and the downside control signal of high-side switch circuit, low side switch circuit;
Wherein, the high-side switch circuit comprises: be serially connected in the first high-side switch and the second high-side switch between high side test voltage source and the test point, the first high-side switch be connected the control end of high-side switch and connect respectively high side control signal; Be serially connected in the common port of the first high-side switch and the second high-side switch and the third high side switch between the ground, high side inverter of control end serial connection of third high side switch connects high side test voltage source; When the first high-side switch and the second high-side switch all end, third high side switch conduction ground connection;
Wherein, the low side switch circuit comprises: be serially connected in the first low side switch and the second low side switch between downside test voltage source and the test point, the first low side switch be connected the control end of low side switch and connect respectively the downside control signal; Be serially connected in the common port of the first low side switch and the second low side switch and the third high side switch between the ground, downside inverter of control end serial connection of third high side switch connects downside test voltage source; When the first low side switch and the second low side switch all end, the 3rd low side switch conducting ground connection.
5. described switching circuit according to claim 4, it is characterized in that, the first high-side switch, the second high-side switch and third high side switch are optocoupler, the control end of the first high-side switch be connected the input that control end links to each other, input connects high side test voltage source, output connects the second high-side switch of high-side switch, and the output connecting test point of the second high-side switch is connected with the output of the first high-side switch after the output head grounding of third high side switch, current-limiting resistance of input serial connection.
6. described switching circuit according to claim 4, it is characterized in that, the first low side switch, the second low side switch and the 3rd low side switch are optocoupler, the control end of the first low side switch and the input of being connected that the control end of low side switch links to each other, input connecting test point, output connect the second low side switch, and the output of the second low side switch connects downside test voltage source, is connected with the output of the first low side switch after the output head grounding of the 3rd low side switch, current-limiting resistance of input serial connection.
7. described switching circuit according to claim 4 is characterized in that, the first high-side switch, the second high-side switch and third high side switch are MOS transistor;
The source electrode of the first high-side switch connects high side test voltage source, source electrode, the grid of connection the second high-side switch that drains are connected with the grid of the second high-side switch and be connected in series high lateral deviation pressure-controlled circuit connects high side control signal afterwards, and the drain electrode connecting test point of the second high-side switch;
Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of third high side switch connects high side inverter are connected with the drain electrode of the first high-side switch afterwards.
8. described switching circuit according to claim 4 is characterized in that, the first low side switch, the second low side switch and the 3rd low side switch are MOS transistor;
The source electrode of the first low side switch and the drain electrode of the second low side switch be connected, drain connecting test point, grid is connected with the grid of the second low side switch, and the source electrode of the second low side switch connects downside test voltage source;
The grid of the first low side switch all is connected in series the downside bias control circuit with the grid of the second low side switch and is connected the downside control signal afterwards, and the drain electrode connecting test point of the second low side switch;
Output, source ground, current-limiting resistance of drain electrode serial connection that the grid of the 3rd low side switch connects the downside inverter are connected with the source electrode of the first low side switch afterwards.
9. described switching circuit according to claim 8 is characterized in that, the downside bias control circuit comprises:
Emitter connects the first downside control switch of high side test voltage source, the grid, the base stage that connect the first low side switch after its collector series connection the one RC oscillating circuit are connected in series the drain electrode that the 2nd RC oscillating circuit connects the second downside control switch afterwards, and the source ground of the second downside control switch, grid connect the downside control signal.
10. a switch test system is characterized in that, described switch test system comprises: several are such as any one described switching circuit among the claim 4-9, and each switching circuit is connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110219717 CN102332903B (en) | 2011-08-02 | 2011-08-02 | Switching circuit and switch testing system using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110219717 CN102332903B (en) | 2011-08-02 | 2011-08-02 | Switching circuit and switch testing system using same |
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| CN102332903A CN102332903A (en) | 2012-01-25 |
| CN102332903B true CN102332903B (en) | 2013-04-17 |
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| CN103345914B (en) * | 2013-07-19 | 2016-04-13 | 深圳市华星光电技术有限公司 | A kind of testing circuit for display panel |
| CN107561343B (en) * | 2017-09-30 | 2023-07-18 | 杰华特微电子股份有限公司 | A current detection circuit of a switch circuit, a current detection method, and a switch circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5325068A (en) * | 1992-07-14 | 1994-06-28 | Abdul Rauf | Test system for measurements of insulation resistance |
| CN1223861C (en) * | 2002-12-05 | 2005-10-19 | 宏达国际电子股份有限公司 | Leakage current and insulation resistance measuring device |
| JP4187022B2 (en) * | 2006-08-23 | 2008-11-26 | ソニー株式会社 | Semiconductor device, semiconductor integrated circuit, and bump resistance measuring method |
| CN201014993Y (en) * | 2006-12-04 | 2008-01-30 | 杨世光 | Test circuit improvement of PCB board tester |
| CN202206355U (en) * | 2011-08-02 | 2012-04-25 | 赖德龙 | Switch circuit and switch test system using same |
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| CN102332903A (en) | 2012-01-25 |
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