CN102289036A - Method for preparing plane optical waveguide chip - Google Patents
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- CN102289036A CN102289036A CN 201110240244 CN201110240244A CN102289036A CN 102289036 A CN102289036 A CN 102289036A CN 201110240244 CN201110240244 CN 201110240244 CN 201110240244 A CN201110240244 A CN 201110240244A CN 102289036 A CN102289036 A CN 102289036A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
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- 239000002245 particle Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 238000005253 cladding Methods 0.000 abstract 7
- 239000012792 core layer Substances 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Abstract
The invention relates to a method for preparing a plane optical waveguide chip, which comprises the following steps of: (1) fixing a substrate of a plane wavelength chip on a photoresist spinner, dripping inorganic silicon oxide nano sol materials on the substrate to form a uniform thin film, and carrying out heat treatment on the thin film to obtain a lower cladding; (2) preparing a core layer on the lower cladding by the same method for preparing the lower cladding and carrying out photoetching and etching process on the core layer; (3) preparing an upper cladding on the core layer prepared in the step (2) by the same method for preparing the lower cladding so as to obtain the plane optical waveguide chip. In the invention, a liquid-phase spin-coating method replaces a conventional gas-phase evaporation plating method to prepare the lower cladding, the core layer and the upper cladding of the plane waveguide chip; the preparation processes can be reduced; the preparation period is shortened; the preparation efficiency is improved; and the preparation cost is greatly reduced. The method is suitable for industrial production.
Description
Technical field
The invention belongs to planar optical waveguides device technology field, particularly relate to a kind of planar optical waveguides chip production method.
Background technology
Along with the fast development of optical communication technology, planar optical waveguide device is used widely.Planar optical waveguide device has become the most crucial device in optical communication technology field because of its compact conformation, the high and low loss of integrated level, high reliability.But because the conventional production equipment costliness of planar waveguide chip, complicated process of preparation has limited the low-cost popularization and application of planar optical waveguide device greatly.By technological innovation, reduce the planar optical waveguide production cost of chip, become the requirement that optical communication technology further develops.
The planar optical waveguide chip mainly is made of substrate, under-clad layer, sandwich layer, top covering.Under-clad layer, sandwich layer, top covering are that thickness is the thin layer of micron level.The refractive index of sandwich layer is higher than upper and lower covering, by the design of core structure, light signal on demand mode in sandwich layer is propagated.The sandwich layer of planar optical waveguide chip, the technology of preparing of upper and lower covering are most crucial technology.The traditional preparation process method of the sandwich layer of planar optical waveguide chip and upper and lower covering and sandwich layer is mainly: chemical vapor deposition, magnetron sputtering deposition, sputtering method, vacuum vapor deposition method, anodizing, plasma oxidation method, thermal oxidation method, flame method etc.There is apparatus expensive in these preparation methods, complex process, and shortcoming such as the thick film preparation time is long, stress is big is difficult to prepare planar optical waveguide chip cheaply.
Summary of the invention
Technical matters to be solved by this invention provides a kind of planar optical waveguides chip production method, and this method is simple, and cost is low, and the efficient height is suitable for suitability for industrialized production.
The preparation method of a kind of planar optical waveguides chip under-clad layer of the present invention comprises:
The substrate of planar waveguide chip is fixed on the photoresist spinner; On substrate,, make inorganic silicon oxide Nano sol droplets of material inorganic silicon oxide Nano sol material form homogeneous film (the gluing process comprises: drip glue, the even glue of rotation, high speed film forming) by control photoresist spinner rotating speed; Described film is heat-treated, make film hardening, promptly get under-clad layer.
Above-mentioned preparation method is suitable for the sandwich layer or the top covering of planar waveguide chip.
A kind of planar optical waveguides chip production method of the present invention comprises:
(1) substrate of planar waveguide chip is fixed on the photoresist spinner; On substrate,, make inorganic silicon oxide Nano sol droplets of material inorganic silicon oxide Nano sol material form homogeneous film (the gluing process comprises: drip glue, the even glue of rotation, high speed film forming) by control photoresist spinner rotating speed; Described film is heat-treated, make film hardening, promptly get under-clad layer;
(2) with above-mentioned preparation under-clad layer same procedure, on under-clad layer, prepare sandwich layer, and it is carried out technologies such as photoetching and etching;
(3) with above-mentioned preparation under-clad layer same procedure, on the sandwich layer that step (2) makes, prepare top covering, promptly get the planar optical waveguides chip.
The aforesaid substrate material is silicon, quartz or other glass material.
The rotating speed of above-mentioned photoresist spinner is 300rpm～3000rpm; Come the controlling diaphragm layer thickness by control slewing rotating speed.
The composition of above-mentioned inorganic silicon oxide Nano sol material is the silica nanometer discrete particles of 5-90%, and wherein the silica granules size can (1 micron, μ m) not wait from several nanometers (nm) to thousands of nanometers; Wherein the refractive index of inorganic silicon oxide Nano sol material is adjusted by doped with Ge, P, B etc.
The refractive index of the inorganic silicon oxide Nano sol material of above-mentioned preparation under-clad layer is 1.2～1.8; The refractive index of the inorganic silicon oxide Nano sol material of preparation sandwich layer is 1.25～1.85; The refractive index 1.2～1.8 of the inorganic silicon oxide Nano sol material of preparation top covering; Described refractive index is with respect to the 1550nm wavelength light.
The above-mentioned process that can repeatedly repeat gluing, curing as required is to obtain the under-clad layer of desired thickness.
Above-mentioned under-clad layer thickness is 10～50um; The thickness of sandwich layer is 2～20um; Top covering thickness is 10～50um.
The thickness of above-mentioned under-clad layer, top covering or sandwich layer forms by single rotation gluing; Or repeatedly rotate gluing formation, multiplicity is advisable with 1～50 time.
Above-mentioned heat treatment mode is illumination, heating etc.Wherein heat treatment temperature is 100 to 800 degree, heat treatment time 0.5～10 hour.
Technological process of the present invention as shown in Figure 3.
Beneficial effect
The present invention adopts the method for liquid phase rotation gluing to replace traditional vapor coating method to prepare under-clad layer, sandwich layer and the top covering of planar waveguide chip, can reduce preparation section, shorten manufacturing cycle, improve preparation efficiency, reduce preparation cost significantly, be suitable for suitability for industrialized production.
Description of drawings
Fig. 1 is for adopting the Planar Optical Waveguide Structures synoptic diagram of method preparation of the present invention;
Fig. 2 is for adopting the planar optical waveguide electron micrograph of method preparation of the present invention.
Fig. 3 is a process chart of the present invention.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
The invention provides a kind of under-clad layer of planar waveguide chip, the preparation method of sandwich layer and top covering is:
(1) substrate of AWG Waveguide array chip is fixed on the photoresist spinner;
(2) refractive index is about 1.3～1.5 inorganic silicon oxide Nano sol droplets of material on substrate;
(3) by control photoresist spinner rotating speed 300rpm～1000rpm, make inorganic silicon oxide Nano sol material form homogeneous film;
(4) film is heat-treated, make film hardening; Wherein heat treatment temperature is 500 degree Celsius, and heat treatment time is 5 hours;
(5) can repeatedly repeat the process of even glue, curing as required, to obtain expecting the AWG under-clad layer of thickness, the refractive index of under-clad layer is 1.3～1.5, the about 10～30um of thickness;
(6) with AWG under-clad layer same procedure, prepare sandwich layer on under-clad layer, the refractive index of sandwich layer is 1.35～1.55, the about 2～10um of thickness, and it is carried out figure photoetching process and plasma etching industrial form the optical waveguide figure that can handle light signal; (7) with AWG under-clad layer same procedure, prepare top covering on sandwich layer, the refractive index of top covering is 1.3～1.5, the about 10～30um of thickness.
The electron micrograph of products obtained therefrom is seen Fig. 2.
Method of the present invention is equally applicable to other planar waveguide chip, as optical power divider, and wavelength division multiplexer chip etc.
Claims (10)
1. the preparation method of a planar optical waveguides chip under-clad layer comprises:
The substrate of planar waveguide chip is fixed on the photoresist spinner; Inorganic silicon oxide Nano sol droplets of material on substrate, is formed homogeneous film; Described film is heat-treated, promptly get under-clad layer.
2. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 is characterized in that: described preparation method is suitable for the making of the sandwich layer or the top covering of planar waveguide chip.
3. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: described baseplate material is silicon, quartz or other glass material.
4. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: the rotating speed of described photoresist spinner is 300rpm～3000rpm.
5. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: the composition of described inorganic silicon oxide Nano sol material is the silica nanometer discrete particles of 5-90%, and all the other are methyl alcohol; Wherein the refractive index of inorganic silicon oxide Nano sol material is adjusted by doped with Ge, P or B.
6. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: the refractive index of the inorganic silicon oxide Nano sol material of described preparation under-clad layer is 1.2～1.8; The refractive index of the inorganic silicon oxide Nano sol material of preparation sandwich layer is 1.25～1.85; The refractive index 1.2～1.8 of the inorganic silicon oxide Nano sol material of preparation top covering; Described refractive index is with respect to the 1550nm wavelength light.
7. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: described under-clad layer thickness is 10～50um; The thickness of sandwich layer is 2～20um; Top covering thickness is 10～50um.
8. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 7 is characterized in that: the thickness of described under-clad layer, top covering or sandwich layer forms by single rotation gluing; Or repeatedly rotate gluing and form.
9. the preparation method of a kind of planar optical waveguides chip under-clad layer according to claim 1 and 2 is characterized in that: described heat treatment mode is illumination or heating; Wherein heat treatment temperature is 100 to 800 degree, heat treatment time 0.5～10 hour.
10. planar optical waveguides chip production method comprises:
(1) substrate of planar waveguide chip is fixed on the photoresist spinner; Inorganic silicon oxide Nano sol droplets of material on substrate, is formed homogeneous film; Described film is heat-treated, promptly get under-clad layer;
(2) with above-mentioned preparation under-clad layer same procedure, on under-clad layer, prepare sandwich layer, and it is carried out photoetching and etch process;
(3) with above-mentioned preparation under-clad layer same procedure, on the sandwich layer that step (2) makes, prepare top covering, promptly get the planar optical waveguides chip.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110240244 CN102289036A (en) | 2011-08-22 | 2011-08-22 | Method for preparing plane optical waveguide chip |
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| CN 201110240244 CN102289036A (en) | 2011-08-22 | 2011-08-22 | Method for preparing plane optical waveguide chip |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105759352A (en) * | 2015-07-03 | 2016-07-13 | 苏州峰通光电有限公司 | Heat-insensitive planar optical waveguide and preparation method thereof |
| CN106371169A (en) * | 2016-10-19 | 2017-02-01 | 河南仕佳光子科技股份有限公司 | Multi-mode waveguide 90-degree turning array chip |
| CN108037564A (en) * | 2017-12-21 | 2018-05-15 | 宁波东立创芯光电科技有限公司 | Scatter light deflector |
| CN114563842A (en) * | 2020-11-27 | 2022-05-31 | 深南电路股份有限公司 | A graded refractive index polymer waveguide and method of making the same |
| WO2022110065A1 (en) * | 2020-11-27 | 2022-06-02 | 深南电路股份有限公司 | Graded-index polymer waveguide and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287277A (en) * | 1999-09-07 | 2001-03-14 | 朗迅科技公司 | strain-free planar optical waveguide |
| CN1372150A (en) * | 2002-02-07 | 2002-10-02 | 吉林大学 | Method for making array waveguiding grating by collosol and gel photoinduction |
| CN101334504A (en) * | 2007-06-27 | 2008-12-31 | 中国科学院半导体研究所 | Method for manufacturing erbium-doped hybrid SiO2 optical waveguides amplifier by ultraviolet light direct-writing |
-
2011
- 2011-08-22 CN CN 201110240244 patent/CN102289036A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287277A (en) * | 1999-09-07 | 2001-03-14 | 朗迅科技公司 | strain-free planar optical waveguide |
| CN1372150A (en) * | 2002-02-07 | 2002-10-02 | 吉林大学 | Method for making array waveguiding grating by collosol and gel photoinduction |
| CN101334504A (en) * | 2007-06-27 | 2008-12-31 | 中国科学院半导体研究所 | Method for manufacturing erbium-doped hybrid SiO2 optical waveguides amplifier by ultraviolet light direct-writing |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105759352A (en) * | 2015-07-03 | 2016-07-13 | 苏州峰通光电有限公司 | Heat-insensitive planar optical waveguide and preparation method thereof |
| CN105759352B (en) * | 2015-07-03 | 2019-09-24 | 苏州峰通光电有限公司 | Hot non-sensitive type planar optical waveguide and preparation method thereof |
| CN106371169A (en) * | 2016-10-19 | 2017-02-01 | 河南仕佳光子科技股份有限公司 | Multi-mode waveguide 90-degree turning array chip |
| WO2018072489A1 (en) * | 2016-10-19 | 2018-04-26 | 河南仕佳光子科技股份有限公司 | Multi-mode 90-degree-bend waveguide array chip |
| CN108037564A (en) * | 2017-12-21 | 2018-05-15 | 宁波东立创芯光电科技有限公司 | Scatter light deflector |
| CN108037564B (en) * | 2017-12-21 | 2020-03-31 | 宁波东立创芯光电科技有限公司 | Scattered light deflector |
| CN114563842A (en) * | 2020-11-27 | 2022-05-31 | 深南电路股份有限公司 | A graded refractive index polymer waveguide and method of making the same |
| WO2022110065A1 (en) * | 2020-11-27 | 2022-06-02 | 深南电路股份有限公司 | Graded-index polymer waveguide and manufacturing method therefor |
| US12366707B2 (en) | 2020-11-27 | 2025-07-22 | Shennan Circuits Co., Ltd. | Graded-index polymer waveguide and manufacturing method thereof |
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Application publication date: 20111221 |