CN102255012B - Manufacturing method and structure of high-voltage direct-current light-emitting diode chip - Google Patents
Manufacturing method and structure of high-voltage direct-current light-emitting diode chip Download PDFInfo
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- CN102255012B CN102255012B CN 201110198674 CN201110198674A CN102255012B CN 102255012 B CN102255012 B CN 102255012B CN 201110198674 CN201110198674 CN 201110198674 CN 201110198674 A CN201110198674 A CN 201110198674A CN 102255012 B CN102255012 B CN 102255012B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000011900 installation process Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000007788 roughening Methods 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 3
- 208000027418 Wounds and injury Diseases 0.000 abstract 1
- 208000014674 injury Diseases 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
The invention discloses a manufacturing method and a structure of a high-voltage direct-current light-emitting diode chip. The manufacturing method comprises the following steps of: flipping a plurality of selected light-emitting diode chip units on the surface of a high-thermal-conductivity substrate provided with a serial circuit with a flipping process and bonding chips flipped on the substrate with bonding equipment to connect the plurality of light-emitting diode chip units in series in sequence; performing laser stripping on the chips connected in series to a heat conducting substrate and removing a sapphire substrate; and forming a high-voltage direct-current light-emitting diode. In the method, the conventional chip unit is bonded on the high-thermal-conductivity chip substrate provided with the serial circuit for sapphire stripping; the method is simple, is easy to operate and contributes to increasing the chip yield and the production efficiency; and in a manufactured chip structure, the input power of chips can be increased by increasing serial chips, so that the heat injury of a pn junction in a large-current working state is reduced, and the reduction in the luminous efficiency, caused by over high density of current flowing through the pn junction, is prevented. Meanwhile, the high-thermal-conductivity substrate and relatively small working current are adopted, so that heat damage to the chips is reduced, and the service life of the chips is further prolonged.
Description
Technical field
The present invention relates to method for manufacturing LED chip and structure thereof, refer in particular to a kind of high voltage direct current method for manufacturing LED chip and structure thereof for field of semiconductor illumination.
Background technology
Light-emitting diode has that volume is little, efficient is high and the advantage such as the life-span is long, has a wide range of applications in fields such as traffic indication, outdoor panchromatic demonstrations.Especially utilize large-power light-emitting diodes may realize semiconductor solid lighting, cause the revolution of human illumination history, thereby become gradually the study hotspot of present person in electronics.
Traditional chip manufacturing process is to prepare simultaneously hundreds of even thousands of chips on a slice substrate, certain distance is arranged between each chip, after preparing these chips, carry out scribing, cutting with their separation, obtain single light-emitting diode finally by the follow-up techniques such as encapsulation.The structure of common single LED core be on the substrates such as sapphire extension the single PN kink structure of n type semiconductor layer, active layer, p type semiconductor layer.In addition, dispose the P electrode at p type semiconductor layer, dispose the N electrode at n type semiconductor layer.
At present, no matter be that powerful or low power LED illumination is used, generally all by power supply, led driver, led chip, several parts of lens and substrate consist of, wherein crucial element is led driver, the light that it must provide a constant current output guarantee LED to send can be not flickering, and the LED color offset phenomenon can not occur, and the cost of drive circuit, energy consumption and stability are important bottlenecks of restriction LED extensive use, because the high-voltage driving circuit technology is relatively more ripe, use more extensive, therefore, the led chip of development and use high voltage DC drive circuit is all significant to the application of further performance led light source and relative conventional light source advantage and further universal led light source.For the large-power light-emitting diodes that semiconductor lighting is used, 40 watts semiconductor lamp can be realized by 40 1 watt the single large-power light-emitting diodes of connecting.Yet the low power LED of using for semiconductor lighting is if will make 40 watts the semiconductor lamp more single individual dice that needs to connect; Because the pipe number that uses is a lot, therefore need to increase more complicated peripheral circuit and driver.Bring difficulty so not only for the design of peripheral circuit, and complicated circuit structure also can bring negative impact to device reliability, useful life and luminescent properties etc.
Therefore, in field of semiconductor illumination, how to break through the periphery circuit design that prior art is further simplified light-emitting diode, simplify manufacture craft, improve the chip light emitting performance, improve chip reliability, prolong chip useful life etc., remain the technical task that those skilled in the art need to be resolved hurrily.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of manufacture method of high voltage direct current light-emitting diode chip for backlight unit and the high voltage direct current LED chip construction that adopts the method to make.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
1) roughening heat conduction translate substrate increases the surface area that is used for upside-down mounting and bonding; Make the series circuit unit that is used for the connection of a plurality of led chips unit in the heat conduction translate substrate, will not belong to simultaneously all the other substrate surface insulation processing of series circuit unit;
2) make the led chip unit that independently adopts Sapphire Substrate, and independently the led chip unit carries out sorting;
3) well-graded independent led chip unit upside-down mounting is being prepared with on the heat conduction translate substrate of series circuit unit, is being connected successively in a plurality of led chips unit;
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again;
5) the described Sapphire Substrate of laser lift-off;
6) the led chip unit behind the clean stripping;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED.
As preferred version of the present invention, step 1) in, making series circuit unit is included on the heat conduction translate substrate and makes for the electrode pad of led chip cell electrode pressure welding and the metal interconnected circuit of a plurality of led chips unit of connecting.
As preferred version of the present invention, step 1) in, make described insulating barrier the heat conduction translate substrate surface passivation outside the series circuit unit is insulated.Further preferred, described insulating barrier adopts SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
Further preferred, described heat conduction translate substrate adopts Si substrate or Cu substrate.
As preferred version of the present invention, step 3) reverse installation process in comprises: utilize bonding technology that the N electrode of a plurality of led chips unit and P electrode are connected with series circuit unit on the described heat conduction translate substrate, thereby connected successively in a plurality of led chips unit.
Further preferred, it is the 2-4 ton that described cryogenic high pressure bonding technology adopts pressure, and temperature is 100-300 degree centigrade.
A kind of high voltage direct current LED chip construction comprises: a plurality of led chips unit and a chip base;
Described led chip sequence of unit comprises n type semiconductor layer, active layer and p type semiconductor layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer respectively and P electrode, described N electrode and P electrode are positioned on the same face of light-emitting diode chip for backlight unit unit;
Described chip base comprises thermal conductive substrate, is positioned at the insulating barrier on the thermal conductive substrate, and is positioned at the outer series circuit for a plurality of led chips unit of connecting of insulating barrier;
Described a plurality of led chips unit upside-down mounting is on described chip base, and connects successively in described a plurality of led chips unit.
Described series circuit be used to a plurality of led chips unit of connecting comprises for the electrode pad of led chip cell electrode pressure welding and the metal interconnected circuit of a plurality of led chips unit of connecting.
Compared to prior art, beneficial effect of the present invention is:
The high voltage direct current light-emitting diode chip for backlight unit that the present invention makes, multiple chips unit by using reverse installation process is connected in the same chip substrate, it forms the led chip array, thereby in the situation that does not change the chip operation electric current, improves the total operating voltage of chip, so that can under high pressure be worked.Because this high voltage direct current light-emitting diode chip for backlight unit will common single light-emitting diode be divided into the chip unit of a plurality of series connection, be about to a plurality of little pn knots and be cascaded according to actual requirement, form by many pn and tie the device that is in series.So just, can increase the input power of chip in the mode that increases series connection chip unit number, thereby reduce the fire damage of pn knot under large current work state, the current density that has prevented from flowing through the pn knot is excessive and light efficiency that cause descends.Therefore, can effectively reduce drive current, improve the device inside thermal characteristics, thereby reduce the caloric value of chip, improve the chip light emitting performance, prolong chip useful life.
In addition, this technology is separately made chip unit and chip base, and utilizes reverse installation process to finish final chip, and method is simple, easy to operate, utilizes reverse installation process to substitute the electrode bridge connection technology and has reduced the manufacture difficulty that interconnects between the multi-chip unit; And according to the actual demand to chip, can carry out accommodation to the peripheral circuit on the chip base easily, simplify the design difficulty of peripheral circuit, be conducive to the raising of chip yields and production efficiency.
Description of drawings
Fig. 1 is the structural representation of embodiment mesohigh direct current light-emitting diode chip for backlight unit;
Fig. 2 is the structural representation of embodiment chips substrate.
Embodiment
Further specify implementation step of the present invention below in conjunction with accompanying drawing, for the convenience that illustrates, accompanying drawing is not proportionally drawn.
High voltage direct current LED chip construction provided by the invention as shown in Figure 1, comprising: a plurality of LED (light-emitting diode) chip unit 10 and chip base 20; Each led chip unit 10 at least order comprises n type semiconductor layer, active layer and p type semiconductor layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer respectively and P electrode, described N electrode and P electrode are positioned on the same face of led chip unit 10; As shown in Figure 2, described chip base 20 comprises thermal conductive substrate 21, is positioned at the insulating barrier 22 on the thermal conductive substrate 21, and is positioned at N pole plate (N-PAD) 23, the P pole plate (P-PAD) 24 outside the insulating barrier 22 and metal interconnected circuit 25 and the metal electrode pad 26 of a plurality of led chips unit 10 that is used for connecting.10 upside-down mountings of a plurality of led chips unit are on chip base 20, and a plurality of led chips unit 10 connects successively, and drawn respectively by N pole plate (N-PAD) 23 and P pole plate (P-PAD) 24, consist of the high voltage direct current light-emitting diode chip for backlight unit.
The preferred embodiment of this high voltage direct current method for manufacturing LED chip below is provided, specifically may further comprise the steps:
1) make chip base 20, described chip base 20 surfaces are provided with N pole plate 23, P pole plate 24 and are used for connecting the series circuit unit of a plurality of described led chips unit 10.
Wherein, when making described chip base 20, make insulating barrier 22 in heat conduction translate substrate 21, and make N pole plate 23, P pole plate 24 and the series circuit unit of a plurality of described led chips unit 10 that is used for connecting at described insulating barrier 22.Described series circuit unit comprises metal interconnected circuit 25 and metal electrode pad 26.
Described heat conduction translate substrate 21 can adopt Si substrate or Cu substrate; Described insulating barrier 22 can adopt SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
2) make a plurality of independently led chips unit 10, and the N electrode of described led chip unit 10 and P electrode are positioned on the same face.
Wherein, can make led chip unit 10 according to following steps:
(1) utilize photoetching and etching or laser scribing technique to form the aisle on the growth substrates surface, growth substrates is divided between a plurality of cellular zones, for example adopting optical maser wavelength is the laser scribing of 200-400nm, draws the road width and can be 2-15 μ m, and the scribing degree of depth can be 1-50 μ m.After forming the aisle, clean growth substrates, foul residual in the above-mentioned aisle is removed.Described growth substrates is Sapphire Substrate.
(2) utilize epitaxial lateral overgrowth technology growth epitaxial loayer, for example utilize metal organic chemical vapor deposition, molecular beam epitaxy or hydride gas-phase epitaxy technology to carry out transversal epitaxial growth.Described epitaxial loayer comprises n type semiconductor layer, active layer and p type semiconductor layer from the bottom to top, makes the mutually electricity isolation of epitaxial loayer of upper growth between each cellular zone, forms raceway groove between the epitaxial loayer between each cellular zone; The n type semiconductor layer of growth is N-type GaN layer, and p type semiconductor layer is P type GaN layer, and active layer is GaN based quantum well layer; Before growing epitaxial, growth substrates is carried out the etching aisle, help to discharge stress, the protection chip.
(3) epitaxial loayer between each cellular zone is made P electrode and N electrode, and P electrode and N electrode are positioned on the same face of described epitaxial loayer; Wherein N electrode and P electrode can be made by techniques such as etchings; Preferably, between P electrode and p type semiconductor layer, can also make current extending, such as transparent conductive material ITO etc.
(4) with described growth substrates attenuate and draw and to split, thereby obtain a plurality of independently led chips unit 10.
3) utilize reverse installation process with unit 10 upside-down mountings of a plurality of described led chips in described chip base 20 surfaces, connected successively in a plurality of described led chips unit 10, and drawn respectively N electrode and the P electrode of the led chip unit 10 at series connection two ends by N pole plate 23 and P pole plate 24.
Reverse installation process wherein comprises: utilize bonding technology that the N electrode of a plurality of described led chips unit 10 is connected (being upside-down mounting) with the P electrode with the series circuit unit on described chip base 20 surfaces, thereby connected successively in a plurality of described led chips unit.
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again; For the second time can to adopt pressure be the 1-4 ton to bonding technology, and temperature is 100-300 degree centigrade, and wherein preferred pressure is about 3 tons, temperature is 280 degrees centigrade.This step has further strengthened the bonding force on led chip unit 10 and chip base 20 surfaces.Increase its stability.Bonding technology is this area common process, again repeats no more.
5) the described growth substrates of laser lift-off is peeled off Sapphire Substrate in the present embodiment;
6) the led chip unit behind the clean stripping;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED, finally finish the making of high voltage direct current light-emitting diode chip for backlight unit.The exiting surface of said chip is the N-Gan layer.
When making this high voltage direct current light-emitting diode chip for backlight unit, position, the connected mode of the arrangement mode of a plurality of led chips unit 10, its N electrode and P electrode can be various, can adjust according to the actual demand to chip, Fig. 1 is a kind of connected mode of preferably arranging wherein, but the present invention is not limited to this.
Compare the packaged type of traditional single chips, because the high voltage direct current led chip adopts the mode of a plurality of chip unit array distribution to arrange, therefore, improved the production efficiency of packaging technology, reduced the production cost of packaging technology.
The method is separately made chip unit and chip base, utilizes reverse installation process to substitute the electrode bridge connection technology, has reduced the manufacture difficulty that interconnects between the multi-chip unit; And according to the actual demand to chip, can carry out accommodation to peripheral circuit easily, simplify the design difficulty of peripheral circuit, be conducive to the raising of chip yields and production efficiency.The high voltage direct current LED that makes can effectively reduce drive current, improves the device inside thermal characteristics, thereby reduces the caloric value of chip, improves the chip light emitting performance, prolongs chip useful life.
Other process conditions that relate among the present invention are the common process condition, belong to the category that those skilled in the art are familiar with, and do not repeat them here.Above-described embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (7)
1. the manufacture method of a high voltage direct current light-emitting diode chip for backlight unit is characterized in that, may further comprise the steps:
1) roughening heat conduction translate substrate increases the surface area that is used for upside-down mounting and bonding; Make the series circuit unit that is used for the connection of a plurality of led chips unit in the heat conduction translate substrate, will not belong to simultaneously all the other substrate surface insulation processing of series circuit unit;
2) make the led chip unit that independently adopts Sapphire Substrate, and independently the led chip unit carries out sorting;
3) well-graded independent led chip unit upside-down mounting is being prepared with on the heat conduction translate substrate of series circuit unit, is being connected successively in a plurality of led chips unit;
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again;
5) the described Sapphire Substrate of laser lift-off;
6) the led chip unit behind the clean stripping;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED.
2. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: in the step 1), making series circuit unit is included on the heat conduction translate substrate and makes for the electrode pad of led chip cell electrode pressure welding and the metal interconnected circuit of a plurality of led chips unit of connecting.
3. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: in the step 1), make insulating barrier the heat conduction translate substrate surface passivation outside the series circuit unit is insulated.
4. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 3 is characterized in that: described insulating barrier employing SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
5. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described heat conduction translate substrate employing Si substrate or Cu substrate.
6. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the reverse installation process in the step 3) comprises: utilize reverse installation process that the N electrode of a plurality of led chips unit and P electrode are connected with series circuit unit on the described heat conduction translate substrate, thereby connected successively in a plurality of led chips unit.
7. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: it is the 2-4 ton that described cryogenic high pressure bonding technology adopts pressure, and temperature is 100-300 degree centigrade.
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| CN 201110198674 CN102255012B (en) | 2011-07-15 | 2011-07-15 | Manufacturing method and structure of high-voltage direct-current light-emitting diode chip |
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| CN 201110198674 CN102255012B (en) | 2011-07-15 | 2011-07-15 | Manufacturing method and structure of high-voltage direct-current light-emitting diode chip |
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| CN102255012B true CN102255012B (en) | 2013-03-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9082748B2 (en) | 2012-10-05 | 2015-07-14 | Micron Technology, Inc. | Devices, systems, and methods related to removing parasitic conduction in semiconductor devices |
| US8884314B1 (en) * | 2013-05-10 | 2014-11-11 | Osram Sylvania Inc. | Circuitry configurable based on device orientation |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
| CN104167485A (en) * | 2014-08-21 | 2014-11-26 | 中国科学院半导体研究所 | Self-supported LED array light source structure |
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| US6635902B1 (en) * | 2002-05-24 | 2003-10-21 | Para Light Electronics Co., Ltd. | Serial connection structure of light emitting diode chip |
| EP2149905A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
| EP1700344B1 (en) * | 2003-12-24 | 2016-03-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light emitting device and lighting module |
| US20050199899A1 (en) * | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
| US8338836B2 (en) * | 2006-11-21 | 2012-12-25 | Seoul Opto Device Co., Ltd. | Light emitting device for AC operation |
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