CN102231367B - Scanning film figure laser transfer method - Google Patents

Abstract

The invention relates to a laser transfer method of a scanning thin film pattern, which relates to a laser transfer method of a thin film pattern. The invention solves the problems of high cost and complicated procedures that need to pre-process multi-layer mask plates in the preparation process of thin film devices or circuits. The steps of the present invention: the transition layer thin film and the source thin film are successively made on the transparent source substrate by sputtering, vapor deposition, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy, and the transition layer The thin film and the source thin film constitute the thin film material layer; the transparent source substrate is placed above the target substrate, and the vertical distance between the transparent source substrate and the target substrate is 0 mm to 5 mm; the laser beam penetrates the transparent source substrate and irradiates on the transition layer On the film, the film material layer is heated and evaporated, and the film material layer is detached from the transparent source substrate; the detached film material layer hits the target substrate, and forms the target film and graphics on the surface of the target substrate. The invention is applicable to the preparation of thin film devices or circuits.

Description

Scanning Thin Film Pattern Laser Transfer Method

technical field

The invention relates to a laser transfer method of thin film graphics, in particular to a scanning laser transfer method of thin film graphics, which belongs to the technical field of thin film device and circuit manufacturing.

Background technique

Thin film materials can be used to make thin film devices, circuits, etc. in the field of electronic packaging. Its characteristic is that it requires high manufacturing precision, and the line width and spacing of thin film graphics need to reach the micron level, or even higher precision. Thin-film devices and circuits composed of thin-film patterns can include conductors, resistors, capacitors, inductors, and optoelectronic devices. In some specific applications, thin-film patterns or devices need to be made into multi-layer thin-film structures.

Due to the characteristics of high interconnection density, high integration, small size, and light weight, thin-film devices and circuits are especially in line with the trend of high-density and lightweight development of electronic devices and components, making thin-film devices and circuits widely used in high-end civilian electronic products. , airborne, spaceborne or aerospace electronic products have broad application prospects. At present, commonly used thin film preparation methods include chemical vapor deposition, vacuum evaporation, sputtering, and electroplating. Then use patterning techniques such as wet etching and dry etching (reactive ion etching, plasma etching and laser etching are three forms of dry etching) to form thin film devices or circuits of desired shape. In the preparation process, multi-layer masks need to be processed in advance, and pattern control is carried out through exposure, etching and other processes, which is costly and complicated.

Contents of the invention

The object of the present invention is to solve the problem of high cost and complicated process that requires pre-processing multi-layer reticles in the existing thin film device or circuit preparation process, and further provides a scanning thin film pattern laser transfer method.

The technical scheme of the present invention is: the specific steps of the laser transfer method of the scanning thin film pattern are:

Step 1, making the transition layer thin film on the lower surface of the transparent source substrate by sputtering, evaporation, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy;

Step 2, making the source film on the lower surface of the transition layer film by sputtering, evaporation, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy, the transition layer film and the source film Constituting a film material layer;

Step 3, setting the transparent source substrate above the target substrate, and setting the transparent source substrate and the target substrate in parallel, and the vertical distance between the transparent source substrate and the target substrate is 0.1 μm to 5 mm;

Step 4, using a laser beam with a spot diameter of 5 microns to 500 microns to penetrate the transparent source substrate and irradiate it on the transition layer film, the film material layer is heated and evaporated, and the film material layer is detached from the transparent source substrate;

In the process of step 4, ① the transparent source substrate moves along the positive direction of the X-axis; ② when the laser beam reaches the edge of the transparent source substrate, the transparent source substrate moves along the positive direction of the Y-axis by one to two times the spot of the laser beam diameter, and then move in the reverse direction along the X-axis; ③When the laser beam reaches the edge of the transparent source substrate again, the transparent source substrate moves along the positive direction of the Y-axis by one to two times the spot diameter of the laser beam, and then moves along the positive direction of the X-axis direction, then repeat steps ② and ③ for the transparent source substrate in turn, and set the length direction of the transparent source substrate as the X axis and the width direction as the Y axis;

Step 5, the detached film material layer hits the target substrate, and forms a target film on the surface of the target substrate;

In the process of step 4 and step 5, the target substrate moves in the A-B plane according to the pattern of the target film, and the upper plane of the target substrate is set as the A-B plane, the A axis is the length direction of the target substrate, and the B axis is the target substrate the width direction.

Compared with the prior art, the present invention has the following effects: the present invention directly transfers the thin film material layer from the transparent source substrate to the target substrate, realizes fine pattern production without a mask, and simultaneously realizes precise control of the thin film material layer, and the present invention The invention has simple process and low cost; prepares the same transparent source substrate with the same kind of thin film material layer, and realizes the production of large-area thin film graphics at one time by changing the same transparent source substrate; prepares different transparent source substrates with heterogeneous thin film material layers Substrates, by replacing different transparent source substrates, realize the connection of different material film lines at one time, or realize the preparation of laminated film patterns of different materials at one time.

Description of drawings

Fig. 1 is a schematic diagram of the principle of the laser transfer method for scanning thin film patterns of the present invention, Fig. 2 is a schematic diagram of the movement of a transparent source substrate, Fig. 3 is a schematic diagram of the movement of a target substrate, and Fig. 4 is an enlarged view of A in Fig. 1 .

Detailed ways

Specific Embodiment 1: This embodiment is described in conjunction with FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 . The specific steps of the laser transfer method for scanning thin film patterns in this embodiment are:

Step 1, the transition layer film 1 is fabricated on the lower surface of the transparent source substrate 2 by sputtering, evaporation, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy;

Step 2, making the source film 3 on the lower surface of the transition layer film 1 by sputtering, vapor deposition, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy, the transition layer film 1 Form a film material layer 7 with the source film 3;

Step 3, setting the transparent source substrate 2 above the target substrate 4, and the transparent source substrate 2 and the target substrate 4 are arranged in parallel, and the vertical distance K between the transparent source substrate 2 and the target substrate 4 is 0 mm to 5 mm;

Step 4, using a laser beam 5 with a spot diameter of 5 microns to 500 microns to penetrate the transparent source substrate 2 and irradiate it on the transition layer film 1, the film material layer 7 is heated and evaporated, and the film material layer 7 is detached from the transparent source substrate 2;

In the process of step 4, ① the transparent source substrate 2 moves along the positive direction of the X-axis; ② when the laser beam 5 reaches the edge of the transparent source substrate 2, the transparent source substrate 2 moves one to two times along the positive direction of the Y-axis The spot diameter of the laser beam 5 then moves in the reverse direction along the X axis; ③ When the laser beam 5 reaches the edge of the transparent source substrate 2 again, the transparent source substrate 2 moves one to two times the laser beam 5 in the positive direction of the Y axis spot diameter, and then move along the positive direction of the X-axis, and then repeat steps ② and ③ in sequence for the transparent source substrate 2;

Step 5, the detached film material layer 7 hits the target substrate 4, and forms the target film 6 on the surface of the target substrate 4;

During the process of step 4 and step 5, the target substrate 4 moves in the A-B plane according to the pattern of the target film 6 .

In this embodiment, the length direction of the transparent source substrate 2 is set as the X axis, the width direction is the Y axis, the upper plane of the target substrate 4 is set as the A-B plane, the A axis is the length direction of the target substrate 4, and the B axis is the target substrate 4 in the width direction.

Specific Embodiment 2: This embodiment is described with reference to FIG. 1 . In step 1 of this embodiment, the thickness of the transition layer film 1 is 0.05 μm to 10 μm, so that it can evaporate quickly and protect the source film 3 . Other steps are the same as in the first embodiment.

Specific Embodiment 3: This embodiment is described in conjunction with FIG. 1. In step 1 of this embodiment, the transition layer film 1 is a metal film or a low-temperature evaporated film, so as to realize the transition connection between the transparent source substrate 2 and the source film 3, or in the source film. When 3 is a heat-sensitive material, the source film 3 is protected from being burned by the laser. Other steps are the same as those in Embodiment 1 or 2.

Embodiment 4: This embodiment is described with reference to FIG. 1 . In Step 1 of this embodiment, the thickness of the transparent source substrate 2 is 20 microns to 5 mm. It is convenient for the laser beam 5 to penetrate the transparent source substrate 2 and ensure that the transparent source substrate 2 has a certain strength. Other steps are the same as those in Embodiment 1, 2 or 3.

Embodiment 5: This embodiment is described with reference to FIG. 1 . In Step 1 of this embodiment, the transparent source substrate 2 is made of a laser-transmissive material. So that the laser can penetrate the transparent source substrate 2 and heat the transition layer thin film 1 . Other steps are the same as those in Embodiment 1, 2, 3 or 4.

Embodiment 6: This embodiment is described with reference to FIG. 1 . In Step 2 of this embodiment, the thickness of the source thin film 3 is 0.05 microns to 20 microns. For the evaporation transfer of thin film. Other steps are the same as those in Embodiment 1, 2, 3, 4 or 5.

Embodiment 7: This embodiment is described with reference to FIG. 1 . In step 2 of this embodiment, the thickness of the source film 3 is 10 microns. Evaporates faster. Other steps are the same as those in Embodiment 1, 2, 3, 4 or 5.

Embodiment 8: This embodiment is described with reference to FIG. 1 . In Step 2 of this embodiment, the source film 3 is a metal film or a functional ceramic film. In order to realize the preparation of thin film circuits or devices. Other steps are the same as those in Embodiment 1, 2, 3, 4, 5, 6 or 7.

Ninth specific embodiment: This embodiment will be described with reference to FIG. 1 . In Step 3 of this embodiment, the vertical distance K between the transparent source substrate 2 and the target substrate 4 is 0 mm to 2 mm. It is easy to form the target film. Other steps are the same as those in Embodiment 1, 2, 3, 4, 5, 6, 7 or 8.

Embodiment 10: This embodiment is described with reference to FIG. 1 . In Step 3 of this embodiment, the vertical distance K between the transparent source substrate 2 and the target substrate 4 is 2 mm to 3 mm. It is easy to form the target film. Other steps are the same as those in Embodiment 1, 2, 3, 4, 5, 6, 7 or 8.

Embodiment 11: This embodiment is described with reference to FIG. 1 . In Step 3 of this embodiment, the vertical distance K between the transparent source substrate 2 and the target substrate 4 is 3 mm to 5 mm. It is easy to form the target film. Other steps are the same as those in Embodiment 1, 2, 3, 4, 5, 6, 7 or 8.

Embodiment 12: This embodiment is described with reference to FIG. 1 . In step 4 of this embodiment, the spot diameter of the laser beam 5 is 5 microns to 150 microns. It is convenient to form target film graphics with different widths. Other steps are the same as those in Embodiments 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11.

Specific Embodiment Thirteen: This embodiment is described with reference to FIG. 1 . In Step 4 of this embodiment, the spot diameter of the laser beam 5 is 150 microns to 300 microns. It is convenient to form the target film pattern. Other steps are the same as those in Embodiments 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11.

Specific Embodiment 14: This embodiment is described with reference to FIG. 1 . In Step 4 of this embodiment, the spot diameter of the laser beam 5 is 300 microns to 400 microns. It is convenient to form target film graphics with different widths. Other steps are the same as those in Embodiments 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11.

Embodiment 15: This embodiment is described with reference to FIG. 1 . In Step 4 of this embodiment, the spot diameter of the laser beam 5 is 400 microns to 500 microns. It is convenient to form target film graphics with different widths. Other steps are the same as those in Embodiments 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11.

Claims (10)

1. scanning film figure laser transfer method, it is characterized in that: the concrete steps of scanning film figure laser transfer method are:

Step 1 is fabricated into the method for transition layer film (1) by sputter, evaporation, plating, brush plating, spin coating, chemical vapour deposition (CVD), plasma plating or molecular beam epitaxy on the lower surface of transparent source substrate (2);

Step 2, the method of source film (3) by sputter, evaporation, plating, brush plating, spin coating, chemical vapour deposition (CVD), plasma plating or molecular beam epitaxy is fabricated on the lower surface of transition layer film (1), and transition layer film (1) and source film (3) consist of thin-film material layer (7);

Step 3, transparent source substrate (2) is arranged on the top of target base plate (4), and transparent source substrate (2) be arranged 0.1 micron～5 millimeters of the vertical ranges (K) between transparent source substrate (2) and the target base plate (4) in parallel with target base plate (4);

Step 4, the employing spot diameter is that 5 microns～500 microns laser beam (5) penetrates transparent source substrate (2), be radiated on the transition layer film (1), thin-film material layer (7) is subjected to thermal evaporation, and thin-film material layer (7) breaks away from from transparent source substrate (2);

In the process of carrying out step 4,1. transparent source substrate (2) moves along the X-axis positive direction; 2. when laser beam (5) arrived the edge of transparent source substrate (2), transparent source substrate (2) moved the spot diameter of one times of laser beam to twice (5) along the Y-axis positive direction, then moves along the X-axis inverse direction; 3. transparent source substrate (2) moves the spot diameter of one times of laser beam to twice (5) along the Y-axis positive direction when laser beam (5) arrives the edge of transparent source substrate (2) again, then move along the X-axis direction, 2. and 3. then repeating step successively for transparent source substrate (2), the length direction of setting transparent source substrate (2) is X-axis, and Width is Y-axis;

Step 5, the thin-film material layer (7) of disengaging clashes into to target base plate (4), and forms aimed thin film (6) on the surface of target base plate (4);

In the process of carrying out step 4 and step 5, target base plate (4) is according to the movement of figure in the A-B plane of aimed thin film (6), the upper plane of target setting substrate (4) is the A-B plane, the A axle is the length direction of target base plate (4), and the B axle is the Width of target base plate (4).

2. scanning film figure laser transfer method according to claim 1, it is characterized in that: in the step 1, the thickness of transition layer film (1) is 0.05 micron～10 microns.

3. scanning film figure laser transfer method according to claim 2, it is characterized in that: in the step 1, transition layer film (1) is metallic film or low-temperature evaporation film.

4. according to claim 1,2 or 3 described scanning film figure laser transfer methods, it is characterized in that: in the step 1, the thickness of transparent source substrate (2) is 20 microns～5 millimeters.

5. scanning film figure laser transfer method according to claim 4, it is characterized in that: in the step 1, transparent source substrate (2) is made by the laser-transmissible material.

6. according to claim 1,2,3 or 5 described scanning film figure laser transfer methods, it is characterized in that: in the step 2, the thickness of source film (3) is 0.05 micron～20 microns.

7. scanning film figure laser transfer method according to claim 6, it is characterized in that: in the step 2, source film (3) is metallic film or functional ceramic film.

8. according to claim 1,2,3,5 or 7 described scanning film figure laser transfer methods, it is characterized in that: in the step 3, the vertical range (K) between transparent source substrate (2) and the target base plate (4) is 2 millimeters～3 millimeters.

9. according to claim 1,2,3,5 or 7 described scanning film figure laser transfer methods, it is characterized in that: in the step 3, the vertical range (K) between transparent source substrate (2) and the target base plate (4) is 3 millimeters～5 millimeters.

10. according to claim 1,2,3,5 or 7 described scanning film figure laser transfer methods, it is characterized in that: in the step 4, the spot diameter of laser beam (5) is 300 microns～400 microns.

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