CN102201465A - Photovoltaic solar energy cell of silicon micro-nano structure - Google Patents
Photovoltaic solar energy cell of silicon micro-nano structure Download PDFInfo
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- CN102201465A CN102201465A CN2010101327722A CN201010132772A CN102201465A CN 102201465 A CN102201465 A CN 102201465A CN 2010101327722 A CN2010101327722 A CN 2010101327722A CN 201010132772 A CN201010132772 A CN 201010132772A CN 102201465 A CN102201465 A CN 102201465A
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Abstract
本发明公开了一种属于太阳能电池技术领域的硅微纳米结构光伏太阳能电池装置。其特征在于所述透明氧化导电薄膜层和P型硅基底层之间含有n型硅微纳米结构/p型硅微纳米结构三维p-n结层。所述太阳能转换装置含有依次相叠的各层为：透明氧化物导电薄膜层，起透光作用并作为正面引出电极；n型硅微纳米结构层位于p型硅微纳米结构层之上，与p型硅微纳米结构层形成p-n结；p型硅微纳米结构层位于p型硅基底层之上。P型硅基底层，作为太阳能电池的基区；铝金属膜背电极，作为背面引出电极。本发明提供的这种具有新型结构的太阳能转换装置，光吸收能力强，载流子收集效率高，光电转换效率高。
The invention discloses a photovoltaic solar cell device with a silicon micro-nano structure belonging to the technical field of solar cells. It is characterized in that there is an n-type silicon micro-nano structure/p-type silicon micro-nano structure three-dimensional pn junction layer between the transparent oxidized conductive film layer and the p-type silicon base layer. The solar energy conversion device contains successively stacked layers: a transparent oxide conductive thin film layer, which acts as a light-transmitting electrode and serves as a front-side lead-out electrode; an n-type silicon micro-nano structure layer is located on the p-type silicon micro-nano structure layer, and The p-type silicon micro-nano structure layer forms a pn junction; the p-type silicon micro-nano structure layer is located on the p-type silicon base layer. The P-type silicon base layer is used as the base area of the solar cell; the aluminum metal film back electrode is used as the back lead-out electrode. The solar conversion device with a novel structure provided by the invention has strong light absorption capability, high carrier collection efficiency and high photoelectric conversion efficiency.
Description
Technical field
The present invention relates to a kind of silicon micro-nano structure photovoltaic solar cell device, belong to technical field of solar.
Background technology
In the face of the continuous deterioration of global energy shortage crisis and biological environment, countries in the world active research and development and use regenerative resource, thus realize the sustainable development of energy industry and society.Wherein, solar energy is considered to the best solution route of the energy crisis and the deterioration of the ecological environment.Solar cell is the device that directly luminous energy is changed into electric energy by photovoltaic effect of semiconductor p-n junction (photovoltaic effect) or Photochemical effects.The commercialization solar cell is based on monocrystalline silicon and amorphous silicon at present.Current, people except that widely applying single crystal silicon solar cell [referring to patent: patent No. JP5243597-A; Patent No. KR2002072736-A], also succeeded in developing polycrystal silicon cell [referring to patent: patent No. US5949123-A], amorphous silicon battery [referring to patent: patent No. JP2002124689-A; Patent No. US6307146-B1], various novel batteries [referring to patent: patent No. JP2002198549-A] such as thin film solar cell, and the solar cell of constantly developing various new materials, new construction again is [referring to patent: patent No. DE19743692-A; DE19743692-A1].
Micro nano structure and material are applied to can increase substantially photoelectric conversion efficiency on the solar cell, are expected to bring revolutionary variation for the development of green energy resource.Compare with other semi-conducting material, silicon materials content is abundant and cheap, and simultaneously with present semiconductor microactuator processing technology compatibility, therefore the solar cell based on silicon micro-nano structure just is being subjected to increasing attention.Lieber seminar of Harvard University successfully developed a kind of novel coaxial silicon nanometer line solar battery in 007 year, and its electricity conversion can reach 5%.This novel battery is main material with silicon nanowire material, cheap [the B.Z.Tian of cost of manufacture, X.L.Zheng, T.J.Kempa, et al., Coaxial silicon nanowires as solar cells and nanoelectronic power sources.Nature 2007,449,885-888.].2008, the Yang Peidong professor seminar of University of California prepared radially p-n junction solar cell [E.C.Garnett, P.D.Yang, J.Am.Chem.Soc.2008,130,9224-9225.] of silicon nanowires.But because there are open defect in p-n junction technology of preparing and battery structure, the silicon nanowires cell photoelectric conversion efficiency of doing preparation at present is lower.
On the bulk silicon micro nano structure technology of preparing basis of our invention [referring to: Chinese patent CN1382626; Chinese patent application numbers 2005100117533; Chinese patent application CN200810084205.7; Chinese patent application CN200810183135.0], we have designed a kind of photovoltaic solar cell device based on silicon micro-nano structure.
Summary of the invention
The present invention seeks to design and provide a kind of to have new structure and light absorpting ability is strong, carrier collection efficient height, the silicon micro-nano structure device for converting solar energy that photoelectric conversion efficiency is high.
The silicon micro-nano structure device for converting solar energy that the present invention proposes, it contains transparent oxide membrane of conducting layer, n type silicon micro-nano structure, p type silicon micro-nano structure, p type silicon substrate layer, aluminum metal film dorsum electrode layer, it is characterized in that: described device for converting solar energy contains folded mutually successively following each layer
(1) the transparent oxide conductive membrane layer is positioned on the n type silicon micro-nano structure, as the front extraction electrode;
(2) n type silicon micro-nano structure array layer is positioned on the p type silicon micro-nano structure array layer, and its effect is to form three-dimensional p-n junction with p type silicon micro-nano structure array layer, produces photovoltaic effect;
(3) p type silicon micro-nano structure array layer is positioned on the P type silicon substrate layer, and its effect is to form three-dimensional p-n junction with n type silicon micro-nano structure array layer, produces photovoltaic effect, and the while is as the base of solar cell;
(4) p type silicon substrate layer is positioned on the aluminum metal film back electrode, and its effect is the base as solar cell;
(5) aluminum metal film dorsum electrode layer, its effect are to form the cell backside extraction electrode;
The present invention at first with the preparation method of silicon micro-nano structure of our invention, at first goes out large-area silicon micro-nano structure array (as the silicon micro wire, silicon nanowires, silicon micron hole, structures such as silicon nanometer hole) in p type silicon chip surface preparation.Adopt thermal diffusion technology or chemical vapour deposition (CVD) at p type silicon micro-nano structure surface preparation n type silicon layer subsequently, thereby form three-dimensional p-n junction.Then in the three-dimensional p-n junction surface deposition of silicon micro-nano structure layer of ZnO: Al transparent conductive film or other transparent conductive film; Subsequently at the silica-based bottom surface of p type plated metal aluminium, behind the sintering as back side Ohm contact electrode.On the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon micro-nano structure photovoltaic solar cell of a monolithic.
Description of drawings
Fig. 1 is a silicon micro-nano structure array photovoltaic solar cell construction schematic diagram of the present invention.
1 transparent oxide conductive film
2n type silicon micro-nano structure layer
3p type silicon micro-nano structure layer
4p type silicon substrate layer
5 aluminum metal film dorsum electrode layers
Embodiment
Embodiment 1
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon nanowire array in p type silicon chip surface preparation, adopt the liquid source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon nanowire array.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon nanowire array layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanowire array photovoltaic solar cell of a monolithic.
The present invention is at first with the preparation method of silicon micro-nano structure of our invention, at first go out large-area orderly silicon nanometer hole array in p type silicon chip surface preparation, adopt the liquid source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon nanometer hole array.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon nanometer hole array layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanometer hole array photovoltaic solar cell of a monolithic.
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon micro wire array in p type silicon chip surface preparation, adopt the liquid source thermal diffusion technology to diffuse to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in p type silicon micro wire array surface.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at silicon micro wire array three-dimensional p-n junction surface deposition layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon micro wire array photovoltaic solar cell of a monolithic
The present invention is at first with the preparation method of silicon micro-nano structure of our invention, at first go out large-area orderly silicon micron hole array in p type silicon chip surface preparation, adopt the liquid source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon micron hole array.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon micron hole array layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon micron hole array photovoltaic solar cell of a monolithic.
The present invention is at first with the preparation method of silicon micro-nano structure of our invention, at first go out large-area orderly silicon micron hole array in p type silicon chip surface preparation, adopt the Solid State Source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon micron hole array.Utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon micron hole array layer of transparent oxide electroconductive film then, use vacuum vapour deposition then at the silica-based bottom surface of p type plated metal aluminium, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon micron hole array photovoltaic solar cell of a monolithic.
Embodiment 6
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon micro wire array in p type silicon chip surface preparation, adopt the Solid State Source thermal diffusion technology to diffuse to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in p type silicon micro wire array surface.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at silicon micro wire array three-dimensional p-n junction surface deposition layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon micro wire array photovoltaic solar cell of a monolithic
Embodiment 7
The present invention is at first with the preparation method of silicon micro-nano structure of our invention, at first go out large-area orderly silicon nanometer hole array in p type silicon chip surface preparation, adopt the Solid State Source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon nanometer hole array.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon nanometer hole array layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanometer hole array photovoltaic solar cell of a monolithic.
Embodiment 8
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon nanowire array in p type silicon chip surface preparation, adopt the Solid State Source thermal diffusion technology to form n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure in the diffusion into the surface of p type silicon nanowire array.Back of the body knot is removed in high temperature aluminum diffusion subsequently, utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon nanowire array layer of transparent oxide electroconductive film then, use vacuum vapour deposition at the silica-based bottom surface of p type plated metal aluminium then, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanowire array photovoltaic solar cell of a monolithic.
Embodiment 9
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon nanowire array in p type silicon chip surface preparation, adopt chemical vapour deposition technique at p type silicon nanowire array surface deposition n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure.Utilize technology such as magnetron sputtering at the three-dimensional p-n junction surface deposition of silicon nanowire array layer of transparent oxide electroconductive film subsequently, use vacuum vapour deposition then at the silica-based bottom surface of p type plated metal aluminium, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanowire array photovoltaic solar cell of a monolithic.
Embodiment 10
The present invention is at first with the preparation method of orderly silicon micro-nano structure of our invention, at first go out large-area silicon nanometer hole array in p type silicon chip surface preparation, adopt chemical vapour deposition technique at p type silicon nanometer hole array surface deposition n type silicon layer subsequently, thereby form three-dimensional nucleocapsid p-n junction structure.Utilize technology such as magnetron sputtering at silicon nanometer hole array three-dimensional p-n junction surface deposition layer of transparent oxide electroconductive film subsequently, use vacuum vapour deposition then at the silica-based bottom surface of p type plated metal aluminium, behind the sintering as back side Ohm contact electrode.After removing the periphery knot, on the Metal Contact electrode on two sides, draw outer lead, just obtained the silicon nanometer hole array photovoltaic solar cell of a monolithic.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441189A (en) * | 2013-09-03 | 2013-12-11 | 中国科学院大学 | Method for preparing radial p-n junction solar cell on silicon nanometer wire |
| CN104396023A (en) * | 2012-02-22 | 2015-03-04 | 三维太阳能电池公司 | Wide angle three-dimensional solar cells |
| CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
| CN107393981A (en) * | 2017-09-13 | 2017-11-24 | 李会欣 | Put backplane photovoltaic cell component, processing method and photovoltaic system deeply |
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257094A (en) * | 2008-03-31 | 2008-09-03 | 北京师范大学 | A silicon nanowire solar cell device |
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nanowire/amorphous silicon heterojunction solar cells |
| CN101292365A (en) * | 2005-06-17 | 2008-10-22 | 依路米尼克斯公司 | photovoltaic line |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | A novel structure silicon nanowire solar cell |
| CN101573802A (en) * | 2006-05-09 | 2009-11-04 | 北卡罗来纳-查佩尔山大学 | High fidelity nanostructures and arrays for photovoltaic devices and methods of making the same |
-
2010
- 2010-03-26 CN CN2010101327722A patent/CN102201465A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101292365A (en) * | 2005-06-17 | 2008-10-22 | 依路米尼克斯公司 | photovoltaic line |
| CN101573802A (en) * | 2006-05-09 | 2009-11-04 | 北卡罗来纳-查佩尔山大学 | High fidelity nanostructures and arrays for photovoltaic devices and methods of making the same |
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nanowire/amorphous silicon heterojunction solar cells |
| CN101257094A (en) * | 2008-03-31 | 2008-09-03 | 北京师范大学 | A silicon nanowire solar cell device |
| CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | A novel structure silicon nanowire solar cell |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
| CN104396023A (en) * | 2012-02-22 | 2015-03-04 | 三维太阳能电池公司 | Wide angle three-dimensional solar cells |
| CN103441189A (en) * | 2013-09-03 | 2013-12-11 | 中国科学院大学 | Method for preparing radial p-n junction solar cell on silicon nanometer wire |
| CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
| CN107393981A (en) * | 2017-09-13 | 2017-11-24 | 李会欣 | Put backplane photovoltaic cell component, processing method and photovoltaic system deeply |
| CN107393981B (en) * | 2017-09-13 | 2023-08-15 | 李会欣 | Deep back electrode photovoltaic cell assembly, processing method and photovoltaic system |
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Application publication date: 20110928 |