CN102185005A - Method for manufacturing selective emitter battery - Google Patents
Method for manufacturing selective emitter battery Download PDFInfo
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- CN102185005A CN102185005A CN2010105102573A CN201010510257A CN102185005A CN 102185005 A CN102185005 A CN 102185005A CN 2010105102573 A CN2010105102573 A CN 2010105102573A CN 201010510257 A CN201010510257 A CN 201010510257A CN 102185005 A CN102185005 A CN 102185005A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000009792 diffusion process Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000009966 trimming Methods 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 6
- 239000002019 doping agent Substances 0.000 claims description 25
- 239000006117 anti-reflective coating Substances 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract 8
- 230000003667 anti-reflective effect Effects 0.000 abstract 2
- 239000007921 spray Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for manufacturing a selective emitter battery. The method comprises the following steps of: providing a semiconductor substrate; flocking on the semiconductor substrate; performing diffusion and doping on the semiconductor substrate and forming a diffusion layer on the front face of the semiconductor substrate, wherein the diffusion layer comprises a high-doping-concentration layer on a surface layer and a low-doping-concentration layer on an inner layer; trimming the diffused semiconductor substrate; forming a silver paste electrode which corresponds to a grid line on the surface of the diffusion layer and forming a back electrode and a back electric field at the bottom of the semiconductor substrate; plating a conductive metal on the surface of the silver paste electrode; etching and removing the high-doping-concentration layer exposed on the front face of the semiconductor substrate by taking the conductive metal as a mask; depositing an anti-reflective film on the front face of the semiconductor substrate; and removing the anti-reflective film on the top surface of a part to be subjected to electrode welding of the conductive metal. In the method, the conductive metal is plated on the silver paste electrode and is taken as the mask for removing the high-doping-concentration layer, so that the requirement for the equipment accuracy is lowered and the production yield of an SE (Spray Etching) battery is increased.
Description
Technical field
The present invention relates to the photovoltaic technology field, particularly relate to a kind of manufacture method of selective emitter battery.
Background technology
At present, development high-efficiency battery technology is to improve the key of solar battery efficiency.(selective emitter, SE) battery is main to the high-efficiency battery technology of comparative maturity with selective emitter.
The structure of SE battery has two features: 1) form highly doped dark diffusion region near grid line contact area (under the grid line and, follow-up formation emitter region); 2) form low-doped shallow diffusion region in other zones.By to the emitter region selective doping, realize the effect of different diffusion sides resistance in grid line contact area and other zones, reduced series resistance.
The method of the existing a kind of SE of making battery following (is example with P type silicon chip):
Making herbs into wool on silicon chip; Described silicon chip is carried out diffusing, doping, specifically can be that described silicon chip is placed POCl
3, O
2And N
2Mist in, diffusion is 1.5 hours under 800～900 ℃ temperature conditions, at the positive n type diffused layer that forms of silicon chip, described n type diffused layer comprises the high-dopant concentration layer on top layer and the low doping concentration layer of internal layer; Silicon chip after the diffusion is carried out trimming handles, can the using plasma etching etc. mode; At silicon chip front cvd silicon oxide; Form the photoresist pattern corresponding at silicon oxide surface, etch away described pattern silica in addition with grid line, with described pattern transfer to silica; As the mask etching silicon chip, remove the high-dopant concentration layer of silicon chip face exposure with the silica after the etching, simultaneously etching is carried out in the silicon chip bottom surface; Remove residual silica; At the positive deposition of described silicon chip antireflective coating; At the position silk screen printing silver slurry corresponding with described silicon chip front high-dopant concentration layer, and at silicon chip bottom surface printing back electrode and back of the body electric field, sintering is finished the making of SE battery.
Above-mentioned technology needs an alignment function when silk-screen silver slurry, therefore very high to the precision requirement of equipment, causes rate of finished products to be under some influence.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of SE battery is to improve the rate that manufactures a finished product of SE battery.
The invention provides a kind of manufacture method of selective emitter battery, comprising:
The semiconductor substrate is provided;
Making herbs into wool on the described semiconductor-based end;
To carrying out diffusing, doping in the described semiconductor-based end, form diffusion layer in the semiconductor substrate front surface, described diffusion layer comprises the high-dopant concentration layer on top layer and the low doping concentration layer of internal layer;
Trimming is carried out at the semiconductor-based end after the diffusion to be handled;
Form the ag paste electrode corresponding on the diffusion layer surface with grid line, and at bottom surface, semiconductor-based end formation back electrode, back of the body electric field;
At ag paste electrode electroplating surface conducting metal;
As mask, etching is removed the high-dopant concentration layer of face exposure of the semiconductor-based end with conducting metal;
At semiconductor substrate front surface deposition antireflective coating;
The removal conducting metal is treated the antireflective coating on the electrode welding portion end face.
Described conducting metal can be silver, gold or copper.
The thickness of described ag paste electrode can be 10 μ m.
The thickness of described conducting metal can be 5～6 μ m.
The etching liquid that etching is removed the high-dopant concentration layer employing of face exposure of the described semiconductor-based end can be a kind of or its combination among NaOH, the KOH.
The concentration of described etching liquid can be 1～10%.
The etch period that described etching is removed the high-dopant concentration layer of face exposure of the semiconductor-based end can be 5～15 minutes.
The electrolyte that described plating is adopted can be photoinduction alkalescence silver plating liquid.
The thickness of described antireflective coating can be 80nm.
Described removal conducting metal treats that the antireflective coating on the electrode welding portion end face can adopt the mode of mechanical grinding.
The manufacture method of SE battery of the present invention, earlier at semiconductor substrate front surface silk-screen ag paste electrode, on ag paste electrode, electroplate conducting metal then, with the mask of conducting metal as removal high-dopant concentration layer, owing to only can form conducting metal on the ag paste electrode surface of conduction, therefore do not need equipment to carry out alignment function once more, realized the autoregistration of conducting metal and ag paste electrode, reduced requirement, improved the rate that manufactures a finished product of SE battery the equipment precision; In addition, adopt the mask of conducting metal, after etching is finished, need not remove, simplified technological process, but also improved the conductivity of SE battery positive electrode as etching high-dopant concentration layer.
Description of drawings
Fig. 1 is the schematic flow sheet of the manufacture method of SE battery of the present invention;
Fig. 2-Figure 10 is the SE battery of the present invention schematic cross-section at the semiconductor-based end in manufacturing process.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the embodiment of the invention is described in further detail below in conjunction with the drawings and specific embodiments.
The invention provides a kind of manufacture method of SE battery, as shown in Figure 1, comprise the steps:
S10 provides semiconductor substrate 100 (referring to Fig. 2).
The described semiconductor-based end 100, be generally monocrystalline silicon or polysilicon, also can be single-crystal silicon Germanium or polycrystalline silicon germanium etc.; The semiconductor-based end, can be the substrate of P type, also can be the substrate of N type.
S20, making herbs into wool (referring to Fig. 3) on the described semiconductor-based end 100.
Can be only in the positive making herbs into wool at the semiconductor-based end, also can be in the making herbs into wool simultaneously of the two sides at the semiconductor-based end.For monocrystalline silicon, adopt alkali lye making herbs into wool, for polysilicon, adopt acid solution making herbs into wool, herein can be referring to prior art.
S30, to carrying out diffusing, doping in the described semiconductor-based end 101, at the positive diffusion layer 110 that forms in the semiconductor-based ends 102, described diffusion layer 110 comprises the high-dopant concentration layer 111 on top layer and the low doping concentration layer 112 (referring to Fig. 4) of internal layer.
For example when the semiconductor-based end was P type silicon chip, diffusing, doping can place POCl with described silicon chip
3, O
2And N
2Mist in, under 800～900 ℃ temperature conditions the diffusion 1.5 hours.
Formed diffusion layer 110 impurity concentrations are the exponential function continuous distribution from the surface of diffusion layer 110 to inside, and the thickness of diffusion layer 110 is 0.3～0.5 μ m; Do not have obvious boundary between the low doping concentration layer 112 of high-dopant concentration layer 111 and internal layer, usually, high-dopant concentration layer 111 concentrates in the scope apart from diffusion layer 110 surperficial 0.05 μ m.
S40 carries out trimming to the semiconductor-based end 102 after the diffusion and handles (referring to Fig. 5).
The semiconductor-based end after the DIFFUSION TREATMENT, also can form the N district in lateral location, cause finished product SE battery just, back side short circuit, therefore need trimming.Trimming can adopt " waterborne floating " technology, and corrosive liquid can adopt HF, HNO
3And H
2SO
4Mixed solution; Modes such as all right using plasma etching of trimming, the present invention does not do qualification to this.
S50 forms the ag paste electrode 201 corresponding with grid line on diffusion layer 110 surfaces, and forms back electrode and back of the body electric field 301 (referring to Fig. 6) in bottom surface, the semiconductor-based ends 103.
Can starch and aluminium paste by the position silk-screen back of the body silver corresponding in bottom surface, the semiconductor-based ends 103 with back electrode and back of the body electric field, after the oven dry, the position silk-screen silver corresponding with grid line is starched on diffusion layer 110 surfaces again, then to sintering of the whole semiconductor-based end, make silver slurry and high-dopant concentration layer 111, the silver-colored slurry of the back of the body and aluminium paste and bottom surface, the semiconductor-based ends 103 form ohmic contact respectively, obtain the ag paste electrode 201 in front, the semiconductor-based ends 103 and the back electrode and the back of the body electric field 301 of bottom surface.The thickness of ag paste electrode 201 can be 10 μ m.
S60 is at ag paste electrode 201 electroplating surface conducting metals 400 (referring to Fig. 7).
Described conducting metal can be silver, gold or copper etc., and the thickness of conducting metal can be 5～6 μ m.When conducting metal is silver, electroplates the electrolyte that adopts and to be photoinduction alkalescence silver plating liquid.In the electroplating process, only can form conducting metal 400 on ag paste electrode 201 surfaces of conduction, and conducting metal can not converged in nonconducting diffusion layer 111 surfaces, thus, do not need equipment to carry out alignment function once more, realized the autoregistration of conducting metal and ag paste electrode 201, reduced requirement the equipment precision.
S70, as mask, etching is removed the high-dopant concentration layer (referring to Fig. 8) of face exposure of the semiconductor-based ends 103 with conducting metal 400.
The etching liquid that etching is removed the high-dopant concentration layer employing of face exposure of the semiconductor-based ends 103 can be a kind of or its combination among NaOH, the KOH, and concentration can be 1～10%.Described etching liquid can carry out selective etch to the high-dopant concentration layer, and does not react with conducting metal and back electrode, back of the body electric field.Because high-dopant concentration layer 111 concentrates in the scope apart from diffusion layer 110 surperficial 0.05 μ m; usually can be at the thickness of diffusion layer surface etch 0.1 μ m; guaranteeing to remove fully the high-dopant concentration layer that comes out, so the etch period that etching is removed the high-dopant concentration layer of face exposure of the semiconductor-based end can be 5～15 minutes.
S80 is at the positive deposition antireflective coating 500 (referring to Fig. 9) in the semiconductor-based ends 104.
S90, removal conducting metal 400 is treated the antireflective coating (referring to Figure 10) on the electrode welding portion end face.
Because antireflective coating is thinner, removes conducting metal 400 and treat that the antireflective coating of electrode welding portion end face can adopt the mode of mechanical grinding, for example grinder buffing.The operations such as electrode welding that the conducting metal that comes out is more convenient for follow-up.
So far, the SE battery completes.
The manufacture method of SE battery of the present invention, earlier at semiconductor substrate front surface silk-screen ag paste electrode, on ag paste electrode, electroplate conducting metal then, with the mask of conducting metal (being grid line) as removal high-dopant concentration layer, owing to only can form conducting metal on the ag paste electrode surface of conduction, therefore do not need equipment to carry out alignment function once more, realized the autoregistration of conducting metal and ag paste electrode, reduced requirement, improved the rate that manufactures a finished product of SE battery the equipment precision; In addition, adopt the mask of conducting metal, after etching is finished, need not remove, simplified technological process, but also improved the conductivity of SE battery positive electrode as etching high-dopant concentration layer.
Need to prove, in this article, relational terms such as first and second grades only is used for an entity or operation are made a distinction with another entity or operation, and not necessarily requires or hint and have the relation of any this reality or in proper order between these entities or the operation.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby make and comprise that process, method, article or the equipment of a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or also be included as this process, method, article or equipment intrinsic key element.Do not having under the situation of more restrictions, the key element that limits by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.All any modifications of being done within the spirit and principles in the present invention, be equal to replacement, improvement etc., all be included in protection scope of the present invention.
Claims (10)
1. the manufacture method of a selective emitter battery is characterized in that, comprising:
The semiconductor substrate is provided;
Making herbs into wool on the described semiconductor-based end;
To carrying out diffusing, doping in the described semiconductor-based end, form diffusion layer in the semiconductor substrate front surface, described diffusion layer comprises the high-dopant concentration layer on top layer and the low doping concentration layer of internal layer;
Trimming is carried out at the semiconductor-based end after the diffusion to be handled;
Form the ag paste electrode corresponding on the diffusion layer surface with grid line, and at bottom surface, semiconductor-based end formation back electrode, back of the body electric field;
At ag paste electrode electroplating surface conducting metal;
As mask, etching is removed the high-dopant concentration layer of face exposure of the semiconductor-based end with conducting metal;
At semiconductor substrate front surface deposition antireflective coating;
The removal conducting metal is treated the antireflective coating on the electrode welding portion end face.
2. the method for claim 1 is characterized in that, described conducting metal is silver, gold or copper.
3. the method for claim 1 is characterized in that, the thickness of described ag paste electrode is 10 μ m.
4. the method for claim 1 is characterized in that, the thickness of described conducting metal is 5～6 μ m.
5. the method for claim 1 is characterized in that, it is a kind of or its combination among NaOH, the KOH that etching is removed etching liquid that the high-dopant concentration layer of face exposure of the described semiconductor-based end adopts.
6. method as claimed in claim 5 is characterized in that, the concentration of described etching liquid is 1～10%.
7. method as claimed in claim 6 is characterized in that, the etch period that described etching is removed the high-dopant concentration layer of face exposure of the semiconductor-based end is 5～15 minutes.
8. method as claimed in claim 2 is characterized in that, when conducting metal was silver, the electrolyte that described plating is adopted was photoinduction alkalescence silver plating liquid.
9. as each described method of claim 1-8, it is characterized in that the thickness of described antireflective coating is 80nm.
10. as each described method of claim 1-8, it is characterized in that described removal conducting metal treats that the antireflective coating on the electrode welding portion end face adopts the mode of mechanical grinding.
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|---|---|---|---|
| CN2010105102573A CN102185005A (en) | 2010-10-18 | 2010-10-18 | Method for manufacturing selective emitter battery |
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|---|---|---|---|
| CN2010105102573A CN102185005A (en) | 2010-10-18 | 2010-10-18 | Method for manufacturing selective emitter battery |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102560686A (en) * | 2012-03-08 | 2012-07-11 | 英利能源（中国）有限公司 | Wet etching method for silicon chip and method for producing solar cell |
| CN102602183A (en) * | 2012-03-06 | 2012-07-25 | 英利能源（中国）有限公司 | Printing method for positive electrode of selective emitter cell |
| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN103266355A (en) * | 2013-04-27 | 2013-08-28 | 竺峰 | Etching agent for polycrystalline silicon wafer and etching method using etching agent |
| CN103680673A (en) * | 2012-08-31 | 2014-03-26 | 上海比亚迪有限公司 | Light-facing side seed layer paste for SE (Selective Emitter) crystalline silicon solar cell, preparation method for light-facing side seed layer paste, SE crystalline silicon solar cell, and preparation method for SE crystalline silicon solar cell |
| WO2014122171A1 (en) * | 2013-02-08 | 2014-08-14 | Asys Automatisierungssysteme Gmbh | Method and device for producing a selective emitter structure for a solar cell, solar cell |
| CN109926583A (en) * | 2018-12-29 | 2019-06-25 | 苏州德龙激光股份有限公司 | To the processing unit (plant) and method of transfer and sintering production ag paste electrode before induced with laser |
| CN114975652A (en) * | 2022-07-25 | 2022-08-30 | 浙江晶科能源有限公司 | Photovoltaic cell and manufacturing method thereof |
| CN115911147A (en) * | 2022-11-16 | 2023-04-04 | 宁夏隆基乐叶科技有限公司 | Selective emitter, preparation method thereof, solar cell and solar module |
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| CN103680673B (en) * | 2012-08-31 | 2016-06-01 | 上海比亚迪有限公司 | SE crystal-silicon solar cell is to light face Seed Layer slurry and its preparation method, SE crystal-silicon solar cell and its preparation method |
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| CN103235185A (en) * | 2013-04-18 | 2013-08-07 | 常州天合光能有限公司 | Method for testing sheet resistance in preparation process of selective transmission electrode battery |
| CN103266355A (en) * | 2013-04-27 | 2013-08-28 | 竺峰 | Etching agent for polycrystalline silicon wafer and etching method using etching agent |
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| CN109926583A (en) * | 2018-12-29 | 2019-06-25 | 苏州德龙激光股份有限公司 | To the processing unit (plant) and method of transfer and sintering production ag paste electrode before induced with laser |
| CN109926583B (en) * | 2018-12-29 | 2023-10-31 | 苏州德龙激光股份有限公司 | Processing device and method for manufacturing silver paste electrode by laser-induced forward transfer printing and sintering |
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