CN102157645A - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN102157645A CN102157645A CN 201110035293 CN201110035293A CN102157645A CN 102157645 A CN102157645 A CN 102157645A CN 201110035293 CN201110035293 CN 201110035293 CN 201110035293 A CN201110035293 A CN 201110035293A CN 102157645 A CN102157645 A CN 102157645A
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- 238000002360 preparation method Methods 0.000 title claims description 29
- 239000004038 photonic crystal Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 157
- 229920002120 photoresistant polymer Polymers 0.000 claims description 144
- 238000005530 etching Methods 0.000 claims description 59
- 238000001259 photo etching Methods 0.000 claims description 25
- 239000003292 glue Substances 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000007598 dipping method Methods 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 13
- 238000012940 design transfer Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 19
- 238000001514 detection method Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 51
- 239000007789 gas Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Abstract
The invention provides a light emitting diode. The light emitting diode comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and a transparent conductive layer which are arranged sequentially; an N electrode is arranged on the N-type semiconductor layer; and a P electrode is arranged on the P-type semiconductor layer. The light emitting diode is characterized in that: a light outlet face is non-planar; the fluctuation of the surface of the light outlet face is more than 60 nanometers; and a photonic crystal is formed on the non-planar light outlet face. The light emitting diode has the fluctuation of more than 60 nanometers on the surface of the light outlet face, and the photonic crystal is formed on the non-planar light outlet face; and by adoption of a detection mode SEM, a picture that the pattern of the template is precisely transferred to the light outlet face with the fluctuation of more than 60 nanometers can be seen. By the efficient structure and the method for guaranteeing the efficient structure, the light outlet efficiency of the light emitting diode is improved by 5 to 20 percent.
Description
Technical field
The invention belongs to the photonic crystal light-emitting diode preparation field, more particularly, on the on-plane surface exiting surface, adopt nanometer embossing to realize the complete transfer of template graphics, obtain having the light-emitting diode of the on-plane surface exiting surface of photonic crystal.
Background technology
The luminous efficiency of LED is subject to external quantum efficiency, and external quantum efficiency is by internal quantum efficiency and the common decision of light extraction efficiency.Internal quantum efficiency depends on lattice defect, doping efficiency and ohm contact performance, and along with the continuous development of MOCVD technology, internal quantum efficiency has reached 80%～90%.On the other hand, because the refractive index (n=2.4) of GaN is greater than the refractive index (n=1) of air or the refractive index (n=1.5) of epoxy resin, the light that sends from active layer since total reflection with the leaded light pattern in the LED internal transmission, seriously reduce the light extraction efficiency of LED.
Influence in order to reduce total reflection, graph substrate, surface coarsening, technology such as photonic crystal are widely studied.Electron beam lithography (EBL), laser interference lithography (LIL) and nano impression (NIL) technology are generally used for preparing the nano-scale figure, and nano impression has high yield with respect to other photoetching techniques, high-resolution, characteristics such as low cost are widely used in the preparation of light-emitting diode photon crystal.
Light-Emitting Diode with on-plane surface exiting surface helps increasing scattering of light, improve the luminous efficiency of Light-Emitting Diode, if but have bigger out-of-flatness surface on the exiting surface of Light-Emitting Diode, existing nano-imprint process technology can't prepare photonic crystal (Patterning nonflat substrates with a low pressure, room temperature, imprint lithography process).
Fig. 1 is applied in the schematic diagram of on-plane surface GaN exiting surface for traditional nano-imprint process, realize that figure transfers on the gallium nitride from photoresist smoothly, the GaN surface undulation must be satisfied P-V＜H, wherein P is a GaN surface peak height, V is a GaN surface minimum point height, P-V is the GaN surface undulation, and H is the graphic feature height, just the effective hole depth of template.Therefore, if the effective hole depth of template is 60nm, the GaN surface undulation can not surpass 60nm, otherwise will guarantee GaN surface high some zone realization figure global transfer, and then figure transfer can't be realized in low spot zone, GaN surface; Otherwise, guarantee GaN surface low spot zone realization figure transfer, then the figure global transfer can't be realized in the high point in GaN surface zone, if consider the selection ratio of photoresist and GaN, GaN surface undulation tolerance will be lower.
Summary of the invention
The purpose of this invention is to provide a kind of light-emitting diode that reduces total reflection influence and preparation method thereof, by having the on-plane surface exiting surface, and on exiting surface, form photonic crystal simultaneously, reduce the total reflection influence greatly.And provide the method that realizes this structure.
Technical scheme of the present invention is: a kind of light-emitting diode, comprise the substrate, resilient coating, non-Doped GaN layer, n type semiconductor layer, active layer, p type semiconductor layer and the transparency conducting layer that are provided with successively, described n type semiconductor layer is provided with the N electrode, described p type semiconductor layer is provided with the P electrode, it is characterized in that: exiting surface is an on-plane surface, surface undulation surpasses 60nm, and preparation has photonic crystal on the on-plane surface exiting surface.
Aforesaid light-emitting diode is characterized in that: exiting surface is a n type semiconductor layer, perhaps p type semiconductor layer, perhaps transparency conducting layer.
The preparation method of the photonic crystal of aforesaid light-emitting diode is characterized in that comprising the steps:
Step 1: at described bright dipping surface layer spin coating ground floor photoresist and form pattern;
Step 2: spin coating second layer photoresist on described ground floor photoresist;
Step 3: use CxHyFz+O
2Etching second layer photoresist, stop etching when exposing the ground floor photoresist, etching second layer photoresist need feed enough oxygen 20sccm～200sccm and time enough 30s～120s, make the abundant oxidation of second layer photoresist, improve selection ratio the ground floor photoresist;
Step 4: use O
2Etching ground floor photoresist;
Step 5: use Cl
2+ BCl
3Or BCl
3The described bright dipping surface layer of+HBr etching arrives the bright dipping surface layer with design transfer;
Step 6: remove ground floor photoresist and second layer photoresist.
Among the preparation method of the photonic crystal of above-mentioned light-emitting diode, use O
2During etching ground floor photoresist, because the fully oxidation of second layer photoresist quilt, this etching gas does not have etching effect substantially to second layer photoresist.
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprises: described ground floor photoresist thickness is 150nm～300nm, needs good adhesive force, described second layer photoresist thickness is 30nm～60nm, uses as hard mask.
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprise that second layer photoresist has very high selection ratio to the ground floor photoresist, and its material is a photoresist of mixing Si, or SiO
2, or Si
3N
4
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprises the steps:
Step 1: at described bright dipping surface layer spin coating ground floor photoresist and second layer photoresist;
Step 2: spin coating the 3rd layer photoetching glue and form pattern on described ground floor photoresist and second layer photoresist;
Step 3: with the 3rd layer photoetching glue is mask CxHyFz+O
2Etching second layer photoresist arrives second layer photoresist with design transfer; Etching second layer photoresist feeds enough oxygen 20sccm～200sccm and time enough 30s～120s, makes the abundant oxidation of second layer photoresist, improves the selection ratio to the ground floor photoresist;
Step 4: with second layer photoresist is mask O
2Etching ground floor photoresist arrives the ground floor photoresist with design transfer;
Step 5: use Cl
2+ BCl
3Or BCl
3The described bright dipping surface layer of+HBr etching arrives the bright dipping surface layer with design transfer;
Step 6: remove ground floor photoresist and second layer photoresist.
Among the preparation method of the photonic crystal of above-mentioned light-emitting diode, when using O2 etching ground floor photoresist, because the fully oxidation of second layer photoresist quilt, this etching gas does not have etching effect substantially to second layer photoresist.
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprises: described ground floor photoresist thickness is 150nm～300nm, and second layer photoresist thickness is 30nm～60nm, the 3rd layer photoetching glue thickness is 150nm～300nm.
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprises: second layer photoresist uses as hard mask, and the ground floor photoresist is had very high selection ratio, and its material is a photoresist of mixing Si, or SiO
2, or Si
3N
4
The preparation method of the photonic crystal of aforesaid light-emitting diode, its feature comprises: ground floor photoresist and the 3rd layer photoetching glue have same composition.
Technique effect: light-emitting diode of the present invention has the on-plane surface exiting surface that surface undulation surpasses 60nm, and preparation has photonic crystal on the on-plane surface exiting surface, adopt SEM detection mode (Fig. 4), the figure integral body of visible template has accurately been transferred to the exiting surface of on-plane surface GaN from photo, the method of the realization of efficient configuration of the present invention and this efficient configuration of assurance, it is different and different according to example that the light-emitting diode light extraction efficiency is improved 5%-20%(5%-20%).In etching second layer photoresist process, add this step of oxidation, improved selection ratio greatly the ground floor photoresist.
Description of drawings
Fig. 1 tradition nano impression is applied in on-plane surface GaN surface.
Fig. 2 Double-layer photoetching glue of the present invention prepares light-emitting diode photon crystal technology schemes step by step.
Fig. 3 multilevel resist of the present invention prepares light-emitting diode photon crystal technology schemes step by step.
The ESEM of Fig. 4 on-plane surface GaN exiting surface photonic crystal.
Fig. 5 tradition photon crystal structure schematic diagram.
The structural representation of Fig. 6 example 1 of the present invention and example 2.
The structural representation of Fig. 7 example 3 of the present invention and example 4.
The structural representation of Fig. 8 example 5 of the present invention and example 6.
Embodiment
The explanation of mark among Fig. 1: ground floor photoresist 1, template 4, template hole depth 4.1, p-GaN type layer 5.6, GaN surface high some P, GaN surface low spot V, feature height H.
The explanation of mark among Fig. 2: ground floor photoresist 1, second layer photoresist 2, template transition figure 4.2, p-GaN type layer 5.6.
The explanation of mark among Fig. 3: the 3rd layer photoetching glue 3, second layer photoresist 2, p-GaN type layer 5.6, photonic crystal 4.3.
The explanation of mark among Fig. 5: substrate 5.1, transition zone 5.2, non-Doped GaN layer 5.3, n-GaN type 5.4, mqw layer 5.5, p-GaN type layer 5.6, transparency conducting layer 5.7, p electrode 5.8, n electrode 5.9.
Embodiment adopts different hard masks to constitute 6 examples
1. in the Double-layer photoetching adhesive process: exiting surface is that transparency conducting layer, p-GaN type layer and n-GaN type layer are as three examples
2. in the multilevel resist technology: exiting surface is that transparency conducting layer, p-GaN type layer and n-GaN type layer are as three examples
Shown in Figure 6, in example 1 structure, light-emitting diode is the light-emitting diode of side direction structure, comprise Sapphire Substrate 5.1, and the transition zone 5.2, the non-Doped GaN layer 5.3 that on Sapphire Substrate 5.1, form successively, n type semiconductor layer (n-GaN type layer) 5.4, active layer (mqw layer) 5.5, p type semiconductor layer (p-GaN type layer) 5.6, transparency conducting layer 5.7, be arranged at p electrode 5.8 and the n electrode 5.9 on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode, wherein rising and falling at p-GaN type laminar surface surpasses 60nm.Adopt the Double-layer photoetching adhesive process on on-plane surface p-GaN type layer exiting surface, to prepare photonic crystal 4.3.
As shown in Figure 2, it is as follows to adopt the Double-layer photoetching adhesive process to prepare the step of photonic crystal on on-plane surface p-GaN type layer:
A. at p-GaN type layer 5.6 surperficial spin coating ground floor photoresist 1 and impress out template transition figure 4.2, glue thickness is 150nm, and its feature needs good adhesive force;
B. spin coating second layer photoresist 2---SiO on ground floor photoresist 1
2, thickness is 30nm, its feature has very high selection ratio as hard mask to ground floor photoresist 1;
C. etching second layer photoresist 2 stops etching when exposing ground floor photoresist 1, and etching gas is CF
4+ O
2, this step aerating oxygen is 80sccm, time 30s makes the 2 abundant oxidations of second layer photoresist, improves the selection ratio to ground floor photoresist 1;
D. etching ground floor photoresist 1, etching gas is O
2, because the 2 abundant oxidations of second layer photoresist, this etching gas does not have etching effect substantially to second layer photoresist 2;
E. etching p-GaN type layer 5.6 surface form photonic crystal 4.3 on its surface, and etching gas is Cl
2+ BCl
3
F. remove ground floor and second layer photoresist.
This structure preparation method is with respect to traditional photon crystal structure (Fig. 5), and light extraction efficiency improves 15%.
Example 2 structures as shown in Figure 6, different is adopts three layer photoetching adhesive process to prepare photonic crystal on on-plane surface p-GaN type layer.
Adopt three layer photoetching adhesive process on on-plane surface p-GaN type layer, to prepare the photonic crystal step as shown in Figure 3:
A. at p-GaN type layer 5.6 surperficial spin coating ground floor photoresist 1 and second layer photoresist 2, thick 150nm and the 30nm of being respectively of glue, wherein second layer photoresist 2 is as hard mask, and material is a photoresist of mixing Si;
B. spin coating the 3rd layer photoetching glue 3 and impress out template transition figure 4.2 on ground floor photoresist 1 and second layer photoresist 2, glue is thick to be 200nm;
C. be mask etching second layer photoresist 2 with the 3rd layer photoetching glue 3, to second layer photoresist 2, etching gas is CHF with design transfer
3+ O
2, this step aerating oxygen is 80sccm, time 30s makes the 2 abundant oxidations of second layer photoresist, improves the selection ratio to ground floor photoresist 1;
D. be mask etching ground floor photoresist 1 with second layer photoresist 2, to ground floor photoresist 1, etching gas is O with design transfer
2, because the 2 abundant oxidations of second layer photoresist, this etching gas does not have etching effect substantially to second layer photoresist 2;
E. etching p-GaN type layer 5.6 surface form photonic crystal 4.3 on its surface, and etching gas is Cl
2+ BCl
3
F. remove ground floor photoresist 1 and second layer photoresist 2.
This structure preparation method is with respect to traditional photon crystal structure (Fig. 5), and light extraction efficiency improves 15%.
Example 3 as shown in Figure 7.Different with embodiment 1 and 2 is that non-Plane n-GaN type exiting surface laminar surface rises and falls above 60nm, adopts the Double-layer photoetching adhesive process to prepare photonic crystal on on-plane surface n-GaN type layer 5.4.
It is as follows to adopt the Double-layer photoetching adhesive process to prepare the photonic crystal step on on-plane surface n-GaN type bright dipping surface layer 5.4:
A. at n-GaN type layer 5.4 surperficial spin coating ground floor photoresist 1 and impression, glue thickness is 150nm, and its feature needs good adhesive force;
B. spin coating second layer photoresist 2---SiO on ground floor photoresist 1
2, thickness is 30nm, its feature has very high selection ratio as hard mask to ground floor photoresist 1;
C. etching second layer photoresist 2 stops etching when exposing ground floor photoresist 1, and etching gas is CF
4+ O
2, this step aerating oxygen is 80sccm, time 30s makes the 2 abundant oxidations of second layer photoresist, improves the selection ratio to ground floor photoresist 1;
D. etching ground floor photoresist 1, etching gas is O
2, because the 2 abundant oxidations of second layer photoresist, this etching gas does not have etching effect substantially to second layer photoresist 2;
E. etching n-GaN type laminar surface forms photonic crystal 4.3 on its surface, and etching gas is Cl
2+ BCl
3
F. remove ground floor and second layer photoresist.
This structure preparation method is with respect to traditional photon crystal structure (Fig. 5), and light extraction efficiency improves 5%.
Example 4 as shown in Figure 7, different is to adopt three layer photoetching adhesive process to prepare photonic crystal on on-plane surface n-GaN type layer 5.4 with embodiment 3.
It is as follows to adopt three layer photoetching adhesive process to prepare the photonic crystal step on on-plane surface n-GaN type layer 5.4:
A. at n-GaN type layer 5.4 surperficial spin coating ground floor photoresist 1 and second layer photoresist 2, thick 150nm and the 30nm of being respectively of glue, wherein second layer photoresist 2 is as hard mask, and material is a photoresist of mixing Si;
B. spin coating the 3rd layer photoetching glue 3 also impresses on ground floor photoresist 1 and second layer photoresist 2, and glue is thick to be 200nm;
C. be mask etching second layer photoresist 2 with the 3rd layer photoetching glue 3, to second layer photoresist 2, etching gas is CHF with design transfer
3+ O
2, this step aerating oxygen is 80sccm, time 30s makes the 2 abundant oxidations of second layer photoresist, improves the selection ratio to ground floor photoresist 1;
D. be mask etching ground floor photoresist 1 with second layer photoresist 2, to ground floor photoresist 1, etching gas is O with design transfer
2, because the 2 abundant oxidations of second layer photoresist, this etching gas does not have etching effect substantially to second layer photoresist 2;
E. etching n-GaN type layer 5.4 surface form photonic crystal 4.3 on its surface, and etching gas is Cl
2+ BCl
3
F. remove ground floor photoresist 1 and second layer photoresist 2.
This structure preparation method is with respect to traditional photon crystal structure (Fig. 5), and light extraction efficiency improves 5%.
Example 5 and 6 structures as shown in Figure 8, as different from Example 1 in the surface undulation of on-plane surface transparency conducting layer exiting surface greater than 60nm, adopt double-deck and three layer photoetching adhesive process prepare photonic crystal 4.3 on on-plane surface transparency conducting layer 5.7.This structure preparation method is with respect to traditional photon crystal structure (Fig. 5), and light extraction efficiency improves 20%.
Claims (9)
1. light-emitting diode, comprise the substrate, resilient coating, non-Doped GaN layer, n type semiconductor layer, active layer, p type semiconductor layer and the transparency conducting layer that are provided with successively, described n type semiconductor layer is provided with the N electrode, described p type semiconductor layer is provided with the P electrode, it is characterized in that: exiting surface is an on-plane surface, the exiting surface surface undulation surpasses 60nm, and preparation has photonic crystal on the on-plane surface exiting surface.
2. light-emitting diode according to claim 1 is characterized in that: exiting surface is a n type semiconductor layer, perhaps p type semiconductor layer, perhaps transparency conducting layer.
3. the preparation method of the photonic crystal of light-emitting diode according to claim 1 is characterized in that comprising the steps:
Step 1: at described bright dipping surface layer spin coating ground floor photoresist and form pattern;
Step 2: spin coating second layer photoresist on described ground floor photoresist;
Step 3: use CxHyFz+O
2Etching second layer photoresist, stop etching when exposing the ground floor photoresist, etching second layer photoresist need feed enough oxygen 20sccm～200sccm and time enough 30s～120s, make the abundant oxidation of second layer photoresist, improve selection ratio the ground floor photoresist;
Step 4: use O
2Etching ground floor photoresist;
Step 5: use Cl
2+ BCl
3Or BCl
3The described bright dipping surface layer of+HBr etching arrives the bright dipping surface layer with design transfer;
Step 6: remove ground floor photoresist and second layer photoresist.
4. the preparation method of the photonic crystal of light-emitting diode according to claim 3, its feature comprises: described ground floor photoresist thickness is 150nm～300nm, need good adhesive force, described second layer photoresist thickness is 30nm～60nm, uses as hard mask.
5. the preparation method of the photonic crystal of light-emitting diode according to claim 3, its feature comprises: second layer photoresist has very high selection ratio to the ground floor photoresist, and its component can be to mix the photoresist of Si, or SiO
2, or Si
3N
4
6. the preparation method of the photonic crystal of light-emitting diode according to claim 1, its feature comprises the steps:
Step 1: at described bright dipping surface layer spin coating ground floor photoresist and second layer photoresist;
Step 2: spin coating the 3rd layer photoetching glue and form pattern on described ground floor photoresist and second layer photoresist;
Step 3: with the 3rd layer photoetching glue is mask CxHyFz+O
2Etching second layer photoresist arrives second layer photoresist with design transfer; Etching second layer photoresist need feed enough oxygen 20sccm～200sccm and time enough 30s～120s, makes the abundant oxidation of second layer photoresist, improves the selection ratio to the ground floor photoresist;
Step 4: with second layer photoresist is mask O
2Etching ground floor photoresist arrives the ground floor photoresist with design transfer;
Step 5: use Cl
2+ BCl
3Or BCl
3The described bright dipping surface layer of+HBr etching arrives the bright dipping surface layer with design transfer;
Step 6: remove ground floor photoresist and second layer photoresist.
7. the preparation method of the photonic crystal of light-emitting diode according to claim 6, its feature comprises: described ground floor photoresist thickness is 150nm～300nm, second layer photoresist thickness is 30nm～60nm, and the 3rd layer photoetching glue thickness is 150nm～300nm.
8. the preparation method of light-emitting diode photon crystal according to claim 6, its feature comprises: second layer photoresist uses as hard mask, and the ground floor photoresist is had very high selection ratio, and its component can be to mix the photoresist of Si, or SiO
2, or Si
3N
4
9. the preparation method of light-emitting diode photon crystal according to claim 6, its feature comprises: ground floor photoresist and the 3rd layer photoetching glue have same composition.
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| CN 201110035293 CN102157645A (en) | 2011-02-10 | 2011-02-10 | Light emitting diode and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038459A (en) * | 2020-09-14 | 2020-12-04 | 扬州乾照光电有限公司 | A photonic crystal LED structure and fabrication method |
| CN113036011A (en) * | 2021-03-03 | 2021-06-25 | 厦门乾照光电股份有限公司 | Coarsening method for LED chip surface and LED chip with coarsened surface |
| CN119108481A (en) * | 2024-07-23 | 2024-12-10 | 京东方华灿光电(浙江)有限公司 | Light emitting diode and method for manufacturing the same |
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Application publication date: 20110817 |