CN102157567A - Semiconductor thin film transistor - Google Patents
Semiconductor thin film transistor Download PDFInfo
- Publication number
- CN102157567A CN102157567A CN 201110065520 CN201110065520A CN102157567A CN 102157567 A CN102157567 A CN 102157567A CN 201110065520 CN201110065520 CN 201110065520 CN 201110065520 A CN201110065520 A CN 201110065520A CN 102157567 A CN102157567 A CN 102157567A
- Authority
- CN
- China
- Prior art keywords
- layer
- aluminum lead
- film transistor
- semiconductor thin
- lead layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000003064 anti-oxidating effect Effects 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000003754 machining Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a semiconductor thin film transistor, which comprises a substrate layer, a grid layer arranged on the substrate layer, an aluminum lead layer arranged on the grid layer, a conducting layer which is arranged on the grid layer and the aluminum lead layer and is used for forming a source and an antioxidation metal layer which is arranged between the substrate layer and the aluminum lead layer, wherein the antioxidation metal layer is electrically contacted with the aluminum lead layer and the conducting layer respectively. The antioxidation metal layer is arranged on the substrate layer, and the aluminum lead layer is arranged on the antioxidation metal layer after patterns are formed, so that the conducting layer which is electrically contacted with the aluminum lead layer directly is electrically contacted with the antioxidation metal layer directly, and is electrically connected with the aluminum lead layer indirectly. Therefore, the problem that contact resistance is increased due to the easily-oxidized aluminum lead layer exposed in the air in the machining process can be solved effectively, the driving capacity of the semiconductor thin film transistor can be improved effectively, and the service life of the transistor can be prolonged.
Description
[technical field]
The present invention relates to the semiconductor element field, relate in particular to a kind of semiconductor thin-film transistor.
[background technology]
Semiconductor thin-film transistor generally comprises film layer structures such as grid, gate insulator, channel layer and source/drain, and it, uses as switch element in LCD usually at display.
As depicted in figs. 1 and 2, traditional semiconductor thin-film transistor 100 comprises the basalis (not shown), be located at aluminium oxide grid layer (not shown) on the basalis, be located at the aluminum lead layer 110 on the aluminium oxide grid layer and be located at the aluminium oxide grid layer and aluminum lead layer 110 on the conductive layer that is used to form source electrode 120.
[summary of the invention]
Based on this, be necessary to provide a kind of semiconductor thin-film transistor that can significantly reduce aluminium film contact resistance.
A kind of semiconductor thin-film transistor, comprise basalis, be located at grid layer on the basalis, be located at aluminum lead layer on the grid layer, be located at the conductive layer that is used to form source electrode on grid layer and the aluminum lead layer, in addition, this semiconductor thin-film transistor also comprises the non-oxidizability metal level of being located between basalis and the aluminum lead layer, the non-oxidizability metal level electrically contacts with aluminum lead layer and conductive layer respectively, insulate between described aluminum lead layer and the described conductive layer.
In preferred embodiment, aluminum lead layer and conductive layer contact portion are provided with the alumina layer that is used to insulate.
In preferred embodiment, grid layer is the aluminium oxide material.
In preferred embodiment, the non-oxidizability metal level is platinum, gold, silver, copper or nickel.
By one deck non-oxidizability metal level is set earlier on basalis, after making pattern, the aluminum lead layer is set again, directly electrically contact thereby become with the non-oxidizability metal level with the directly electrical conductive layer that contacts of aluminum lead layer before, electric connection between formation and the aluminum lead layer indirectly, can effectively avoid in the course of processing, exposing the easy oxidized problem that increases contact resistance in air because of the aluminum lead layer, thereby can effectively improve the driving force of semiconductor thin-film transistor, prolong its useful life.
[description of drawings]
Fig. 1 is traditional semiconductor thin-film transistor film layer structure schematic diagram;
Fig. 2 is that the aluminum lead layer contacts schematic diagram with conductive layer among Fig. 1;
Fig. 3 is a semiconductor thin-film transistor film layer structure schematic diagram in the execution mode;
Fig. 4 is the contact schematic diagram of aluminum lead layer among Fig. 3, non-oxidizability metal level and conductive layer.
[embodiment]
Mainly reaching specific embodiment below in conjunction with the accompanying drawings is described in further detail the transistorized structure of semiconductive thin film.
As shown in Figure 3 and Figure 4, the semiconductor thin-film transistor 200 of an execution mode comprise the basalis (not shown), be located at grid layer (not shown) on the basalis, be located at the aluminum lead layer 210 on the grid layer and be located at grid layer and aluminum lead layer 210 on the conductive layer that is used to form source electrode 220.In addition, the semiconductor thin-film transistor 200 of present embodiment also comprises the non-oxidizability metal level of being located between basalis and the aluminum lead layer 210 230.Non-oxidizability metal level 230 electrically contacts with aluminum lead layer 210 and conductive layer 220 simultaneously, insulation between aluminum lead layer 210 and the conductive layer 220.
Semiconductor thin-film transistor 200 in the present embodiment at first forms grid layer and non-oxidizability metal level 230 on basalis in manufacture process; After being processed into suitable pattern, aluminum lead layer 210 is put in plating on grid layer and non-oxidizability metal level 230 again, thereby aluminum lead layer 210 electrically contacts with 230 formation of non-oxidizability metal level; 210 plating of aluminum lead layer are processed into suitable pattern with aluminum lead layer 210 after putting and finishing, and non-oxidizability metal level 230 has a contact angle to expose out; Then to aluminum lead layer 210 with will plate surface that the conductive layer 220 put contacts and carry out after selective oxidation handles, form an alumina layer 240, conductive layer 220 is put in plating on contact angle that non-oxidizability metal level 230 exposes and aluminum lead layer 210 again, thereby aluminum lead layer 210 and conductive layer 220 contact portions are owing to the existence of alumina layer 240 is insulated, conductive layer 220 forms with the indirect of aluminum lead layer 210 by non-oxidizability metal level 230 and electrically contacts, can effectively avoid in the course of processing, exposing the easy oxidized problem that increases contact resistance in air because of aluminum lead layer 210, thereby can effectively improve the driving force of semiconductor thin-film transistor 200, prolong its useful life.
The grid layer of present embodiment is the aluminium oxide material.Non-oxidizability metal level 230 is a copper metal layer, and in other embodiments, non-oxidizability metal level 230 can also be difficult for oxidized stable preferred metal, for example metal levels such as platinum, gold, silver or nickel for other in atmospheric environment.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (4)
1. semiconductor thin-film transistor, comprise basalis, be located at grid layer on the described basalis, be located at aluminum lead layer on the described grid layer, be located at the conductive layer that is used to form source electrode on described grid layer and the described aluminum lead layer, it is characterized in that, also comprise the non-oxidizability metal level of being located between described basalis and the described aluminum lead layer, described non-oxidizability metal level electrically contacts with described aluminum lead layer and described conductive layer, insulate between described aluminum lead layer and the described conductive layer.
2. semiconductor thin-film transistor as claimed in claim 1 is characterized in that, described aluminum lead layer and described conductive layer contact portion are provided with the alumina layer that is used to insulate.
3. semiconductor thin-film transistor as claimed in claim 1 is characterized in that, described grid layer is the aluminium oxide material.
4. semiconductor thin-film transistor as claimed in claim 1 is characterized in that, described non-oxidizability metal level is platinum, gold, silver, copper or nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110065520 CN102157567B (en) | 2011-03-18 | 2011-03-18 | Semiconductor thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110065520 CN102157567B (en) | 2011-03-18 | 2011-03-18 | Semiconductor thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157567A true CN102157567A (en) | 2011-08-17 |
| CN102157567B CN102157567B (en) | 2013-02-06 |
Family
ID=44438898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110065520 Expired - Fee Related CN102157567B (en) | 2011-03-18 | 2011-03-18 | Semiconductor thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102157567B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1522470A (en) * | 2001-07-02 | 2004-08-18 | ������������ʽ���� | TFT substrate, liquid crystal display device using the same, and method of manufacturing the same |
| US20090236605A1 (en) * | 2008-03-21 | 2009-09-24 | Haijun Qiu | Tft-lcd pixel structure and manufacturing method thereof |
| CN202025764U (en) * | 2011-03-18 | 2011-11-02 | 深圳南玻伟光导电膜有限公司 | Semiconductor thin film transistor |
-
2011
- 2011-03-18 CN CN 201110065520 patent/CN102157567B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1522470A (en) * | 2001-07-02 | 2004-08-18 | ������������ʽ���� | TFT substrate, liquid crystal display device using the same, and method of manufacturing the same |
| US20090236605A1 (en) * | 2008-03-21 | 2009-09-24 | Haijun Qiu | Tft-lcd pixel structure and manufacturing method thereof |
| CN202025764U (en) * | 2011-03-18 | 2011-11-02 | 深圳南玻伟光导电膜有限公司 | Semiconductor thin film transistor |
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| Publication number | Publication date |
|---|---|
| CN102157567B (en) | 2013-02-06 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160128 Address after: 443005 No. 38, Dalian Road, Yichang, Hubei Patentee after: YICHANG NANBO DISPLAY DEVICES CO., LTD. Address before: 518000 Guangdong Province, Shenzhen high tech Zone of Nanshan District City, No. three North Road, CSG Electronics Building Patentee before: Shenzhen Nanbo Welllight Conductive Coating Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 Termination date: 20210318 |