CN102156001A - Method for diagnosing self-biased probe of radio-frequency discharge plasma - Google Patents
Method for diagnosing self-biased probe of radio-frequency discharge plasma Download PDFInfo
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Abstract
本发明涉及到一种射频放电等离子体自偏置探针诊断方法,属于等离子体科学与技术领域。其特征是在等离子体中放置两根探针:探针a和探针b,探针a相对于等离子体放电回路处于浮动状态,探针b通过隔直电容和取样电阻连接放电回路地。测量探针a和探针b之间的电压交流成分振幅ΔV、探针b电流的一次谐波振幅|i1ω|和二次谐波振幅|i2ω|,利用ΔV、|i1ω|和|i2ω|计算得出电子温度Te和离子密度ni。本发明的有益效果是:能够克服探针表面绝缘污染的影响,获得离子密度和电子温度等参数。探针上不加直流或交流偏置电压,对等离子体放电扰动小。
The invention relates to a radio frequency discharge plasma self-bias probe diagnosis method, which belongs to the field of plasma science and technology. It is characterized in that two probes are placed in the plasma: probe a and probe b, the probe a is in a floating state relative to the plasma discharge circuit, and the probe b is connected to the ground of the discharge circuit through a DC blocking capacitor and a sampling resistor. Measure the amplitude ΔV of the AC component of the voltage between probe a and probe b, the first harmonic amplitude |i 1ω | and the second harmonic amplitude |i 2ω | of the probe b current, using ΔV, |i 1ω | and | i 2ω | The electron temperature T e and the ion density ni are calculated. The beneficial effect of the invention is that it can overcome the influence of the insulation pollution on the surface of the probe, and obtain parameters such as ion density and electron temperature. There is no DC or AC bias voltage applied to the probe, which has little disturbance to the plasma discharge.
Description
技术领域technical field
本发明属于等离子体科学与技术领域,涉及到一种射频放电等离子体自偏置探针诊断方法,用于诊断射频放电等离子体,能够克服探针表面绝缘污染的影响,获得离子密度和电子温度等参数。The invention belongs to the field of plasma science and technology, and relates to a radio frequency discharge plasma self-bias probe diagnosis method, which is used for diagnosing radio frequency discharge plasma, can overcome the influence of probe surface insulation pollution, and obtain ion density and electron temperature and other parameters.
背景技术Background technique
诊断等离子体参数的常用方法是把一个探针置于等离子体中并加上扫描偏置电压,测量并分析探针电流随扫描偏置电压变化的伏安特性曲线获得等离子体的各项参数。这种方法的一个严重局限性是不能用于有绝缘薄膜沉积发生的反应等离子体中,因为这种情况下探针表面会被绝缘生成物覆盖,无法收集电流而失效。A common method for diagnosing plasma parameters is to place a probe in the plasma and apply a scanning bias voltage, measure and analyze the volt-ampere characteristic curve of the probe current changing with the scanning bias voltage to obtain various parameters of the plasma. A serious limitation of this method is that it cannot be used in reactive plasmas where the deposition of insulating films occurs, because in this case the surface of the probe will be covered with insulating products, unable to collect current and fail.
针对这个问题,Lee等人公开了一种浮动探针的等离子体诊断方法[M.H.Lee,et al.,J.Appl.Phys.v101,p033305(2007)],给探针加高频交流偏置电压,利用探针电流的基频和二次谐波幅度计算出电子温度和离子密度。由于这种探针依靠位移电流工作,即使探针表面存在一定程度的污染绝缘仍然可以继续使用。但这种方法的缺点是需要在探针上加高频交流偏置电压,常常会扰动等离子体,改变等离子体的原有状态,使测量不准确。In response to this problem, Lee et al. disclosed a plasma diagnostic method for a floating probe [M.H.Lee, et al., J.Appl.Phys.v101, p033305 (2007)], adding a high-frequency AC bias to the probe Voltage, electron temperature and ion density are calculated using the fundamental and second harmonic amplitudes of the probe current. Since this kind of probe relies on displacement current to work, even if there is a certain degree of pollution on the surface of the probe, the insulation can still be used continuously. However, the disadvantage of this method is that a high-frequency AC bias voltage needs to be added to the probe, which often disturbs the plasma, changes the original state of the plasma, and makes the measurement inaccurate.
发明内容Contents of the invention
本发明要解决的技术问题是提供一种射频放电等离子体自偏置探针诊断方法,以解决上述浮动探针的等离子体诊断方法由于需要在探针上加高频交流偏置电压而扰动等离子体,改变等离子体的原有状态,使测量不准确的问题。The technical problem to be solved by the present invention is to provide a radio frequency discharge plasma self-biased probe diagnosis method to solve the above-mentioned floating probe plasma diagnosis method that disturbs the plasma due to the need to add a high-frequency AC bias voltage to the probe. body, change the original state of the plasma, and make the measurement inaccurate.
本发明技术方案是:Technical scheme of the present invention is:
在等离子体中放置两根探针:探针a和探针b,探针a相对于等离子体放电回路处于浮动状态,探针b通过隔直电容和取样电阻连接放电回路地线。探针上不加直流或交流偏置电压。Place two probes in the plasma: probe a and probe b. Probe a is in a floating state relative to the plasma discharge circuit, and probe b is connected to the ground wire of the discharge circuit through a DC blocking capacitor and a sampling resistor. No DC or AC bias voltage is applied to the probes.
测量探针a和探针b之间的电压交流成分振幅ΔV、探针b电流的一次谐波振幅|i1ω|和二次谐波振幅|i2ω|,利用ΔV、|i1ω|和|i2ω|计算得出电子温度Te和离子密度ni,计算公式分别是:Measure the amplitude ΔV of the AC component of the voltage between probe a and probe b, the first harmonic amplitude |i 1ω | and the second harmonic amplitude |i 2ω | of the probe b current, using ΔV, |i 1ω | and | i 2ω | Calculate the electron temperature T e and the ion density n i , and the calculation formulas are:
|i1ω|/|i2ω|=I1(eΔV/Te)/I2(ΔV/Te)(1)|i 1ω |/|i 2ω |=I 1 (eΔV/T e )/I 2 (ΔV/T e )(1)
上面两式中,I0、I1和I2分别是零阶、一阶和二阶修正贝塞尔函数;e是电子电量,单位为库仑;A是探针表面积,单位为平方米;Mi是离子的质量,单位为千克;k=1.38×10-23J/K是波尔兹曼常数;ΔV单位为伏特;|i1ω|和|i2ω|单位为安培;Te和ni单位分别是开尔文和个每立方米。In the above two formulas, I 0 , I 1 and I 2 are the zero-order, first-order and second-order modified Bessel functions respectively; e is the electron charge, the unit is Coulomb; A is the surface area of the probe, the unit is square meter; M i is the mass of ions in kilograms; k=1.38×10 -23 J/K is Boltzmann's constant; ΔV is in volts; |i 1ω | and |i 2ω | are in amperes; Te and ni The units are Kelvin and units per cubic meter, respectively.
本发明的有益效果是:能够克服探针表面绝缘污染的影响,获得离子密度和电子温度等参数。探针上不加直流或交流偏置电压,对等离子体放电扰动小。The beneficial effect of the invention is that it can overcome the influence of the insulation pollution on the surface of the probe, and obtain parameters such as ion density and electron temperature. There is no DC or AC bias voltage applied to the probe, which has little disturbance to the plasma discharge.
附图说明Description of drawings
附图是本发明的诊断方法示意图。The accompanying drawing is a schematic diagram of the diagnostic method of the present invention.
图中:1探针a,2探针b,3等离子体,4隔直电容a,5隔直电容b,In the figure: 1 probe a, 2 probe b, 3 plasma, 4 DC blocking capacitor a, 5 DC blocking capacitor b,
6放大器a,7放大器b,8频谱分析器,9放电回路地,10取样电阻。6 amplifier a, 7 amplifier b, 8 spectrum analyzer, 9 discharge loop ground, 10 sampling resistor.
具体实施方式Detailed ways
下面结合技术方案和附图详细叙述本发明的具体实施例。Specific embodiments of the present invention will be described in detail below in conjunction with technical solutions and accompanying drawings.
在图1中,1探针a和2探针b位于3等离子体中,1探针a相对于等离子 体放电回路处于浮动状态,2探针b经5隔直电容b和10取样电阻连接9放电回路地;1探针a和2探针b分别经4隔直电容和5隔直电容连接6放大器a的正负输入端,1探针a和2探针b之间的电压交流成分经6放大器a放大并整流滤波后输出振幅ΔV;2探针b的电流经10取样电阻变换为电压信号,经7放大器b放大后送至8频谱分析器,经8频谱分析器分析后输出一次谐波振幅|i1ω|和二次谐波振幅|i2ω|;将输出的ΔV、|i1ω|和|i2ω|数据带入公式(1)和公式(2)分别计算出电子温度Te和离子密度ni。In Figure 1, 1 probe a and 2 probe b are located in 3 plasma, 1 probe a is in a floating state relative to the plasma discharge circuit, 2 probe b is connected to 9 through 5 DC blocking capacitor b and 10 sampling resistor Discharge circuit ground; 1 probe a and 2 probe b are respectively connected to the positive and negative input terminals of 6 amplifier a through 4 DC blocking capacitors and 5 DC blocking capacitors, and the voltage AC component between 1 probe a and 2 probe b is passed through 6. Amplifier a amplifies and rectifies and filters the output amplitude ΔV; 2. The current of probe b is converted into a voltage signal by 10 sampling resistors, and then sent to 8 spectrum analyzer after being amplified by 7 amplifier b. After being analyzed by 8 spectrum analyzer, it outputs the primary harmonic wave amplitude |i 1ω | and second harmonic amplitude |i 2ω |; put the output ΔV, |i 1ω | and |i 2ω | data into formula (1) and formula (2) to calculate the electron temperature T e and ion density n i .
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048522A (en) * | 2013-01-11 | 2013-04-17 | 哈尔滨工业大学 | Diagnosis method of low temperature plasma density parameter at atmospheric pressure |
| CN103140009A (en) * | 2013-01-31 | 2013-06-05 | 北京航空航天大学 | Langmuir multi-probe control circuit used for plasma diagnosis |
| CN106413237A (en) * | 2016-10-31 | 2017-02-15 | 大连理工大学 | Plasma diagnostic method of multi-amplitude AC bias probe based on data acquisition card |
| CN106851953A (en) * | 2017-02-22 | 2017-06-13 | 大连理工大学 | A kind of convex-concave probe and its plasma diagnostic method |
| CN109219225A (en) * | 2018-10-18 | 2019-01-15 | 哈尔滨工业大学 | Diagnose the collecting method of alternating current discharge plasma parameter |
| CN111432542A (en) * | 2020-03-02 | 2020-07-17 | 辽宁工业大学 | A dual-probe detection device and detection method for internal discharge state of welding arc |
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| CN101361176A (en) * | 2005-11-04 | 2009-02-04 | 韩国标准科学研究院 | Plasma diagnostic apparatus and method |
| US20100033195A1 (en) * | 2008-07-07 | 2010-02-11 | Jean-Paul Booth | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber |
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2011
- 2011-03-17 CN CN 201110064085 patent/CN102156001A/en active Pending
Patent Citations (2)
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| CN101361176A (en) * | 2005-11-04 | 2009-02-04 | 韩国标准科学研究院 | Plasma diagnostic apparatus and method |
| US20100033195A1 (en) * | 2008-07-07 | 2010-02-11 | Jean-Paul Booth | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber |
Non-Patent Citations (2)
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| 《Journal of Applied Physics》 20071231 Min-Hyong Lee,Sung-Ho Jang,Chin-Wook Chung Floating probe for electron temperature and ion density measurement applicable to processing plasmas 第1页第2栏倒数第2行至第3页第2栏倒数第17行 1 第101卷, 2 * |
| 《真空科学与技术学报》 20091031 袁方园等 利用朗缪尔双探针诊断电弧离子镀等离子体参数 第510页第1.1节 1 第29卷, 第05期 2 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048522A (en) * | 2013-01-11 | 2013-04-17 | 哈尔滨工业大学 | Diagnosis method of low temperature plasma density parameter at atmospheric pressure |
| CN103140009A (en) * | 2013-01-31 | 2013-06-05 | 北京航空航天大学 | Langmuir multi-probe control circuit used for plasma diagnosis |
| CN103140009B (en) * | 2013-01-31 | 2015-11-11 | 北京航空航天大学 | For the Langmuir multiprobe control circuit of plasma diagnostic |
| CN106413237A (en) * | 2016-10-31 | 2017-02-15 | 大连理工大学 | Plasma diagnostic method of multi-amplitude AC bias probe based on data acquisition card |
| CN106851953A (en) * | 2017-02-22 | 2017-06-13 | 大连理工大学 | A kind of convex-concave probe and its plasma diagnostic method |
| CN106851953B (en) * | 2017-02-22 | 2018-12-21 | 大连理工大学 | A kind of convex-concave probe and its plasma diagnostic method |
| CN109219225A (en) * | 2018-10-18 | 2019-01-15 | 哈尔滨工业大学 | Diagnose the collecting method of alternating current discharge plasma parameter |
| CN111432542A (en) * | 2020-03-02 | 2020-07-17 | 辽宁工业大学 | A dual-probe detection device and detection method for internal discharge state of welding arc |
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Application publication date: 20110817 |