CN102145385A - Method for mixing copper indium gallium selenide slurry without interfacial active agent or solvent - Google Patents
Method for mixing copper indium gallium selenide slurry without interfacial active agent or solvent Download PDFInfo
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- CN102145385A CN102145385A CN201010111161XA CN201010111161A CN102145385A CN 102145385 A CN102145385 A CN 102145385A CN 201010111161X A CN201010111161X A CN 201010111161XA CN 201010111161 A CN201010111161 A CN 201010111161A CN 102145385 A CN102145385 A CN 102145385A
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Abstract
The invention relates to a method for mixing copper indium gallium selenide slurry without interfacial active agent or solvent. The method comprises the following steps of: mixing two-component, three-component or four-component powder containing IB, IIIA and VIA family elements to form primary mixed powder, adding extra VIA family element powder to form final mixed powder, and heating and stirring the powder to form mixed slurry containing the IB, IIIA and VIA family elements, wherein the mixed slurry contains copper, indium, gallium and selenium, or contains copper, indium, gallium, selenium and sulfur. The interfacial active agent and the adhesion agent are replaced by using the extra selenium powder so that stable adhesive force is formed on a molybdenum layer; and the solvent is not needed, so that the mixed slurry can be directly coated on the molybdenum layer of a copper indium gallium selenide solar cell to form an absorption layer for photoelectric conversion, and light absorption property and conversion efficiency of the absorption layer are not affected.
Description
Technical field
The present invention relates to a kind of copper indium gallium selenide sizing agent concocting method, particularly relate to a kind of concocting method that does not contain the copper indium gallium selenide sizing agent of interfacial agent, solid and solvent.
Background technology
In recent years, the new line of and environmental consciousness surging with international oil price, green energy resource has become the new forms of energy main flow, wherein solar cell is again because of being the stable radiant energy of taking from the sun, the source can be inexhausted, and therefore more various countries pay attention to draw from one to make good the deficits of another invariably a large amount of development costs and subsidies granted for policy considerations, to foster local solar cell industry, make that the development of global solar industry is very quick.
First generation solar modules comprises the solar modules of monocrystalline silicon and polysilicon, though photoelectric transformation efficiency height and volume production technology maturation, because the material cost height, and Silicon Wafer influences follow-up volume production scale often because of the demand source of goods deficiency of semi-conductor industry.Therefore, the thin film solar module that comprises the second generation of amorphous silicon membrane, CIGS thin-film and Cadimium telluride thin film, in development and ripe gradually in recent years, wherein, therefore come into one's own especially again with the conversion efficiency of CIGS (CIGS) solar cell the highest (element cell can up to 20% module about 14%).
Seeing also shown in Figure 1ly, is the schematic diagram of prior art CIGS or Cu-In-Ga-Se-S solar battery structure.As shown in Figure 1; the CIGS of prior art or Cu-In-Ga-Se-S solar battery structure comprise substrate 10; first conductive layer 20; contain IB; the absorbed layer 30 of IIIA and VIA family element; cushion 40; the insulating barrier 50 and second conductive layer 60; wherein substrate 10 can be glass plate; aluminium sheet; Stainless Steel plate or plastic plate; first conductive layer 20 generally comprises metal molybdenum; be used as backplate; contain IB; the absorbed layer 30 of IIIA and VIA family element is the IB that comprises proper proportion; IIIA and VIA family element; be used as p type film; be main light absorbed layer; cushion 40 can comprise cadmium sulfide (CdS); be used as n type film; insulating barrier 50 comprises zinc oxide (ZnO); in order to protection to be provided, second conductive layer 60 comprises zinc oxide aluminum (ZnO:Al), in order to connect front electrode.
The manufacture method of above-mentioned CIGS or Cu-In-Ga-Se-S solar cell mainly is divided into vacuum manufacturing process and antivacuum manufacturing process according to the manufacturing environment of CIGS or Cu-In-Ga-Se-S absorbed layer.Vacuum manufacturing process comprises sputtering method or vapour deposition method, and shortcoming is that cost of investment is higher and stock utilization is lower, so the integral manufacturing cost is higher.Antivacuum manufacturing process comprises print process or electrodeposition process, and shortcoming is that technology is still immature, does not still have the larger area commercial prod.But antivacuum manufacturing process still has the advantage that manufacturing equipment is simple and fabrication process condition is reached easily, and suitable business potential is arranged.
The antivacuum manufacturing process of CIGS or Cu-In-Ga-Se-S absorbed layer is to allocate CIGS or Cu-In-Ga-Se-S slurry or ink (Ink) earlier, in order to be applied on the molybdenum layer.
Seeing also shown in Figure 2ly, is the flow chart of prior art CIGS or Cu-In-Ga-Se-S slurry preparation method.As shown in Figure 2, the CIGS of prior art or Cu-In-Ga-Se-S slurry preparation method are to be begun by step S10, contain IB with the proper proportion mixing, two compositions of IIIA and VI family element, three compositions or four composition powder are to form original CIGS or the Cu-In-Ga-Se-S mixed-powder of containing, again through step S20, add the solvent of proper proportion, and stir to form original CIGS or Cu-In-Ga-Se-S slurry, at last in step S30, add solid (binder) or interfacial agent, as silanes, with the then property of raising CIGS or Cu-In-Ga-Se-S absorbed layer and molybdenum backplate, and mix to form last CIGS or Cu-In-Ga-Se-S slurry.
The shortcoming of above-mentioned prior art is, solid, interfacial agent and solvent may remain in last CIGS or the Cu-In-Ga-Se-S absorbed layer, cause the phosphorus content and the oxygen content of CIGS or Cu-In-Ga-Se-S absorbed layer higher, influence the optical absorption characteristics of CIGS or Cu-In-Ga-Se-S absorbed layer, even influence efficient.Therefore, need a kind of Cu-In-Ga-Se-S slurry preparation method that need not add solid, interfacial agent and solvent, to improve the problem of above-mentioned located by prior art.
Summary of the invention
Main purpose of the present invention is providing a kind of concocting method that does not contain the copper indium gallium selenide sizing agent of interfacial agent, solid and solvent.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of concocting method that does not contain the copper indium gallium selenide sizing agent of interfacial agent and solvent according to the present invention's proposition, be not need interfacial agent and solid and directly make one of them of a copper indium gallium selenide sizing agent and a Cu-In-Ga-Se-S slurry, in order to be coated on the molybdenum layer and form one of them of a CuInGaSe absorbed layer and a Cu-In-Ga-Se-S absorbed layer, this concocting method may further comprise the steps: at first, according to a formula rate, mix and contain IB, two compositions of IIIA and VIA family element, three compositions or four composition powder, to form an original mixed powder, and this IB family element comprises copper, this IIIA family element comprises indium or gallium or indium gallium composite material, and this VIA family element comprises selenium or sulphur or selenium and sulphur composite material; With one the one VIA family element ratio, add extra VIA family element powders again to this original mixed powder, and mix to form a last mixed-powder; Should be heated to one first heating-up temperature by last mixed-powder, and use forming a mixing material, and this first heating-up temperature is more than the fusing point of this VIA family element, and the VIA family element powders of fusing is to be used as the also dispersion media of unfused other powder; At last, this mixing material is evenly stirred, and continue a mixing time, use forming a mixed slurry that contains IB, IIIA and VIA family element, and this mixed slurry is this copper indium gallium selenide sizing agent and this Cu-In-Ga-Se-S slurry one of them.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid concocting method, wherein in this formula rate system comprise that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: 2.0.
Aforesaid concocting method, wherein a VIA family element ratio comprises that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: X, wherein X is between 2.0 to 4.0.
Aforesaid concocting method, wherein this extra VIA family element powders can comprise pure selenium, bright sulfur or selenium sulphur composite material.
Aforesaid concocting method, wherein this first heating-up temperature is lower than 300 ℃.
Aforesaid concocting method, wherein this mixing time is half an hour at least.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of interfacial agent that do not contain, the concocting method of the copper indium gallium selenide sizing agent of solid and solvent, this concocting method is to comprise mixing containing IB, two compositions of IIIA and VIA family element, three compositions or four composition powder, form the original mixed powder, and IB family element comprises copper, IIIA family element comprises indium and gallium and VIA family element comprises selenium and sulphur, add extra VIA family element powders again, comprise pure selenium, bright sulfur or selenium sulphur mixed-powder are to form last mixed-powder, it is above to form mixing material then to be heated to VIA family fusing point, again through being stirred to not a half hour, contain IB with formation, the mixed slurry of IIIA and VIA family element, this mixed slurry can be and comprises copper, indium, the copper indium gallium selenide sizing agent of gallium and selenium, or comprise copper, indium, gallium, the Cu-In-Ga-Se-S slurry of selenium and sulphur.
By technique scheme, the concocting method that the present invention does not contain the copper indium gallium selenide sizing agent of interfacial agent and solvent has following advantage and beneficial effect at least: concocting method of the present invention not only utilizes extra VIA family powder to replace interfacial agent and solid and molybdenum layer is formed stable adhesion, and mat heat fused and need not use solvent, and then can directly be coated on the molybdenum layer of copper indium gallium selenium solar cell, forming the absorbed layer of using for the opto-electronic conversion of copper indium gallium selenium solar cell, and can not influence the optical absorption characteristics and the conversion efficiency of absorbed layer.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic diagram of the copper indium gallium selenium solar cell structure of prior art.
Fig. 2 is the flow chart of the copper indium gallium selenide sizing agent concocting method of prior art.
Fig. 3 does not contain the flow chart of concocting method of the copper indium gallium selenide sizing agent of interfacial agent and solvent for the present invention.
10: 20: the first conductive layers of substrate
30: absorbed layer 40: cushion
50: 60: the second conductive layers of insulating barrier
S10, S20, S30: prior art slurry preparation step
S100, S110, S120, S130: slurry preparation step of the present invention
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its specific embodiment of concocting method, step, feature and the effect thereof of the copper indium gallium selenide sizing agent that does not contain interfacial agent and solvent that foundation the present invention is proposed, describe in detail as after.
Concocting method of the present invention is not need interfacial agent, solid and solvent, and to mix and mode of heating allotment copper indium gallium selenide sizing agent or Cu-In-Ga-Se-S slurry.
Seeing also shown in Figure 3ly, is the flow chart of the concocting method of the present invention's copper indium gallium selenide sizing agent of not containing interfacial agent and solvent.As shown in Figure 3, concocting method of the present invention is to be begun by step S100, and at first in step S100, according to formula rate, mixing contains two compositions, three compositions or the four composition powder of IB, IIIA and VIA family element to form the original mixed powder.
The ratio of the IB that above-mentioned formula rate comprised, IIIA and VIA family element, be to be expressed as 1.0: 1.0: 2.0 with molar ratio, wherein IB family element comprises copper, IIIA family element can be pure indium, pure gallium or indium gallium composite material, in addition, VIA family element can be pure selenium, bright sulfur or selenium sulphur composite material.Therefore, the original mixed powder can comprise copper, indium, gallium and selenium, maybe can comprise copper, indium, gallium, selenium and sulphur.
Then in step S110, with a VIA family element ratio, add extra VIA family element powders again to the original mixed powder, make VIA family element ratio in the original mixed powder be increased to IB family element ratio, and mix to form last mixed-powder greater than 2 times.This extra VIA family element powders can comprise pure selenium, bright sulfur or selenium sulphur composite material.
The ratio of the one VIA family element is that IB, the IIIA that last mixed-powder is comprised and the ratio of VIA family element are expressed as 1.0: 1.0 with molar ratio: X, wherein X is between 2.0 to 4.0.Contain the ratio of powder of VIA family element when too low, to molybdenum layer then effect, and contain the ratio of VIA family element powders when too high, can reduce the adhesion to molybdenum layer on the contrary, the ratio that therefore contains VIA family element powders need be controlled in above-mentioned preferred range.
Then enter step S120, last mixed-powder is heated to first heating-up temperature, use the formation mixing material, and this first heating-up temperature is more than the fusing point of employed VIA family element.The purpose that heating makes last mixed-powder improve temperature is the VIA family element powders fusing that makes in the last mixed-powder, because of employed VIA element can be selenium, sulphur or selenium sulphur mixture, so first heating-up temperature can be lower than 300 ℃, and make the VIA family element powders of fusing that dispersion media as other powder that can't melt under this temperature is provided.
In step S130, mixing material is evenly stirred at last, and continue one section mixing time, this mixing time is at least half an hour, uses to form the mixed slurry that contains IB, IIIA and VIA family element.Mixed slurry can comprise copper, indium, gallium and selenium, maybe can comprise copper, indium, gallium, selenium and sulphur, and therefore, mixed slurry can be described as copper indium gallium selenide sizing agent or Cu-In-Ga-Se-S slurry, but general custom is called copper indium gallium selenide sizing agent.
Characteristics of the present invention are, do not need solvent and directly melt employed VIA element powders with mode of heating, that is selenium and sulphur, and then be used as the also dispersion media of unfused powder, copper indium gallium selenide sizing agent with alr mode allotment tool flowability, and can directly be applied on the molybdenum layer, carry out the absorbed layer that light absorption and opto-electronic conversion are used in the formation copper indium gallium selenium solar cell.
Another characteristics of the present invention are, need not add interfacial agent and solid, and replace, use the adhesion of enhancing molybdenum layer with extra VIA element powders, and can reduce phosphorus content and oxygen content in the follow-up absorbed layer, keep the optical absorption characteristics and the conversion efficiency of absorbed layer.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (6)
1. concocting method that does not contain the copper indium gallium selenide sizing agent of interfacial agent and solvent, be not need interfacial agent and solid and directly make one of them of a copper indium gallium selenide sizing agent and a Cu-In-Ga-Se-S slurry, in order to be coated on the molybdenum layer and form one of them of a CuInGaSe absorbed layer and a Cu-In-Ga-Se-S absorbed layer, it is characterized in that this concocting method may further comprise the steps:
At first, according to a formula rate, mix two compositions, three compositions or the four composition powder that contain IB, IIIA and VIA family element, to form an original mixed powder, and this IB family element comprises copper, and this IIIA family element comprises indium and gallium, and this VIA family element comprises selenium or comprises selenium and sulphur;
With one the one VIA family element ratio, add extra VIA family element powders again to this original mixed powder, and mix to form a last mixed-powder;
Should be heated to one first heating-up temperature by last mixed-powder, and use forming a mixing material, and this first heating-up temperature is more than the fusing point of this VIA family element, and the VIA family element powders of fusing is to be used as the also dispersion media of unfused other powder;
At last, this mixing material is evenly stirred, and continue a mixing time, use forming a mixed slurry that contains IB, IIIA and VIA family element, and this mixed slurry is this copper indium gallium selenide sizing agent and this Cu-In-Ga-Se-S slurry one of them.
2. concocting method according to claim 1 is characterized in that wherein this formula rate system comprises that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: 2.0.
3. concocting method according to claim 1, it is characterized in that a VIA family element ratio comprises that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: X, wherein X is between 2.0 to 4.0.
4. concocting method according to claim 1 is characterized in that wherein this extra VIA family element powders can comprise pure selenium, bright sulfur or selenium sulphur composite material.
5. concocting method according to claim 1 is characterized in that wherein this first heating-up temperature is lower than 300 ℃.
6. concocting method according to claim 1 is characterized in that wherein this mixing time is half an hour at least.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194916A (en) * | 2010-03-03 | 2011-09-21 | 正峰新能源股份有限公司 | Preparation method of copper indium gallium selenide slurry without surfactant and solvent |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050183767A1 (en) * | 2004-02-19 | 2005-08-25 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| US20070169809A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
| CN101159298A (en) * | 2007-11-22 | 2008-04-09 | 北京科技大学 | A method for preparing an indium-rich light-absorbing layer of a copper indium selenium thin film solar cell |
| CN101245443A (en) * | 2007-02-17 | 2008-08-20 | 光洋应用材料科技股份有限公司 | Target material and film manufactured by the target material |
| CN101307397A (en) * | 2008-04-15 | 2008-11-19 | 成都先锋材料有限公司 | Copper indium gallium selenide photovoltaic material vacuum melting method and device |
| CN101383389A (en) * | 2008-10-07 | 2009-03-11 | 苏州富能技术有限公司 | Preparation for copper-indium-galliun-selenium-sulfur or copper-indium-galliun-selenium or copper-indium-galliun-sulfur film solar cell absorption layer |
| CN101531529A (en) * | 2009-04-14 | 2009-09-16 | 武汉理工大学 | Preparation method of CuInxGa1-xSe2 powder |
-
2010
- 2010-02-10 CN CN201010111161XA patent/CN102145385A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050183767A1 (en) * | 2004-02-19 | 2005-08-25 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| US20070169809A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
| CN101245443A (en) * | 2007-02-17 | 2008-08-20 | 光洋应用材料科技股份有限公司 | Target material and film manufactured by the target material |
| CN101159298A (en) * | 2007-11-22 | 2008-04-09 | 北京科技大学 | A method for preparing an indium-rich light-absorbing layer of a copper indium selenium thin film solar cell |
| CN101307397A (en) * | 2008-04-15 | 2008-11-19 | 成都先锋材料有限公司 | Copper indium gallium selenide photovoltaic material vacuum melting method and device |
| CN101383389A (en) * | 2008-10-07 | 2009-03-11 | 苏州富能技术有限公司 | Preparation for copper-indium-galliun-selenium-sulfur or copper-indium-galliun-selenium or copper-indium-galliun-sulfur film solar cell absorption layer |
| CN101531529A (en) * | 2009-04-14 | 2009-09-16 | 武汉理工大学 | Preparation method of CuInxGa1-xSe2 powder |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194916A (en) * | 2010-03-03 | 2011-09-21 | 正峰新能源股份有限公司 | Preparation method of copper indium gallium selenide slurry without surfactant and solvent |
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Application publication date: 20110810 |