CN102136405A - Light-emitting element and manufacturing method and light-emitting method thereof - Google Patents
Light-emitting element and manufacturing method and light-emitting method thereof Download PDFInfo
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- CN102136405A CN102136405A CN2010101034632A CN201010103463A CN102136405A CN 102136405 A CN102136405 A CN 102136405A CN 2010101034632 A CN2010101034632 A CN 2010101034632A CN 201010103463 A CN201010103463 A CN 201010103463A CN 102136405 A CN102136405 A CN 102136405A
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Abstract
The invention relates to a light-emitting element, which comprises a light-emitting membrane, wherein a metal layer is arranged on the surface of the light-emitting membrane and is provided with a metal microscopic structure; and the light-emitting membrane is provided with a light-emitting material. The invention also provides a manufacturing method and a light-emitting method of the light-emitting element. In the light-emitting element, the light-emitting membrane is provided with the metal layer, so the light-emitting efficiency and light-emitting uniform stability of the light-emitting material can be enhanced; and the light-emitting element can be used on a light-emitting device which has ultrahigh luminance and operates at high speed.
Description
Technical field
The invention belongs to the luminescent material technical field, be specifically related to a kind of light-emitting component, its manufacture method and luminescent method thereof with light-emitting film.
Background technology
Traditional material as luminous substrate comprises fluorescent material, nanocrystal and light-emitting film etc., for nanocrystal and fluorescent material, light-emitting film have be easy to prepare, good chemical stability and good optical property, applicable to the display device or the lighting source of different shape or size.
For example, in the vacuum microelectronics field, feds utilizes fluorescent glass as luminous element usually, and it has demonstrated wide application prospect in illumination and demonstration field, causes the extensive concern of domestic and international research institution.The feds operation principle is: under vacuum environment, (Fieldemissive arrays FEAs) applies forward voltage and forms accelerating field the relative field emission cathode array of anode, and the electronics of cathode emission quickens Hong the luminescent material on the pole plate and luminous on the sunny side.The operating temperature range of feds wide (40 ℃～80 ℃), response time short (＜1ms), simple in structure, power saving, meet environment protection requirement.In addition, materials such as fluorescent powder, fluorescent glass, light-emitting film can use as luminescent material in feds, but they all exist luminous efficiency to hang down this essential problem, have greatly limited the application of feds, particularly in the application of lighting field.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of and has uniformity of luminance height, luminous efficiency height, good stability, light-emitting component simple in structure, and the method for manufacturing luminescent device that a kind of preparation technology is simple, cost is low.
The embodiment of the invention also provide a kind of easy and simple to handle, convenient and reliable, strengthen the light-emitting component luminescent method of luminescent material luminous efficiency greatly.
A kind of light-emitting component, it comprises light-emitting film, and the surface of described light-emitting film is provided with a metal level, and described metal level has the metal microstructure structure, and described light-emitting film has luminescent material.
A kind of method of manufacturing luminescent device, it comprises the steps:
The preparation light-emitting film, described light-emitting film comprises luminescent material;
Form a metal level on the surface of described light-emitting film; And
Described light-emitting film and metal level are carried out annealing in process under vacuum, make described metal level form the metal microstructure structure, the cooling back forms described light-emitting component.
And, a kind of luminescent method of light-emitting component, it comprises the steps:
Obtain light-emitting component according to above-mentioned method of manufacturing luminescent device; And
To metal level emitting cathode ray, between cathode-ray exciting lower metal layer and light-emitting film, form surface plasma, make the luminescent material in the light-emitting film luminous.
In above-mentioned light-emitting component, by employing one deck is set on light-emitting film and has microstructural metal level, this metal level can be under cathode-ray and the interface between the light-emitting film form surface plasma, by the surface plasma bulk effect, the internal quantum efficiency of light-emitting film is improved greatly, the spontaneous radiation that is luminescent material strengthens, and then has strengthened the luminous efficiency of luminescent material greatly, thereby solves low this problem of luminescent material luminous efficiency.Thereby, in the luminescent method of light-emitting component, only need metal level emitting cathode ray is formed surface plasma between metal level and the light-emitting film, to strengthen the luminous efficiency of luminescent material, improve its luminous reliability.Because light-emitting component comprises light-emitting film and metal level, this double-decker is simple, simultaneously, at light-emitting film and metal interlevel even interface is arranged, thereby shows very high uniformity of luminance and stability.In the luminescent method of light-emitting component, only need metal level emitting cathode ray is formed surface plasma between metal level and the light-emitting film, can strengthen the luminous efficiency of luminescent material greatly, improve its luminous reliability.
In above-mentioned light-emitting component preparation method, only need on light-emitting film, form the layer of metal layer, annealed then processing can obtain required light-emitting component, and this preparation method's technology is simple, cost is low, has wide production application prospect.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the light emitting element structure schematic diagram of the embodiment of the invention;
Fig. 2 is the light-emitting component preparation method flow chart of the embodiment of the invention;
Fig. 3 is the luminescent method flow chart of the light-emitting component of the embodiment of the invention;
Fig. 4 is the light-emitting component of the embodiment of the invention 1 and the luminescent spectrum figure of the fluorescent glass contrast that does not add metal level, and cathode-ray luminescence spectrum test condition is: the accelerating voltage of electron-beam excitation is 5KV.
Fig. 5 is the light-emitting component of the embodiment of the invention 18 and the luminescent spectrum figure of the fluorescent glass contrast that does not add metal level, and cathode-ray luminescence spectrum test condition is: the accelerating voltage of electron-beam excitation is 5KV.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 1, the light-emitting component 10 of the embodiment of the invention is shown, the metal level 14 that it comprises light-emitting film 13 and is located at light-emitting film 13 surfaces, described light-emitting film 13 has luminescent material.Metal level 14 has the metal microstructure structure, and this metal microstructure structure is also referred to as micro-nano structure sometimes.Further, this metal microstructure structure is that the metallic crystal of i.e. random arrangement constitutes by aperiodicity, the discrete arrangement.
In one embodiment of the invention, this light-emitting film 13 can have Y
2-xTb
xSiO
5Luminescent material, wherein, 0＜x≤0.3 is preferably 0＜x≤0.2.Light-emitting film 13 is being provided with transparent or semitransparent substrate 15 with another the surperficial relative surface that is provided with metal level 14, and substrate 15 can be used as the supporter of light-emitting film 13.Substrate 15 can be quartz substrate, sapphire substrate or magnesium oxide substrate etc.Certainly, be understandable that light-emitting film 13 can be formed on the matrix of some other practical applications, be not limited to substrate 15, for example can be attached to some glass elements surfaces.
In another embodiment of the present invention, this light-emitting film 13 can comprise Zn
2-xMn
xSiO
4Luminescent material, other and above-mentioned Y
2-xTb
xSiO
5Luminescent material is basic identical.By structural formula as can be known, Y
2-xTb
xSiO
5And Zn
2-xMn
xSiO
4All be the silicate-base luminescent material, as matrix, and doping terbium or manganese strengthen the luminescent properties of matrix with silicate.Wherein, silicate substrate is not limited to above-mentioned all kinds of, can also be other rare earth silicate, also can be other rare earth ion that mixes, and terbium or manganese are not limited to mix.In addition, should be understood that above material is as just example, other various luminous materials all can be included within the design scope of the present invention, such as but not limited to some oxides or sulfide luminescent material.
Wherein, metal level 14 can be by the chemical stability good metal, the metal that for example is difficult for oxide etch, also can be the metal of using always in addition, be preferably that at least a metal in gold, silver, aluminium, copper, titanium, iron, nickel, cobalt, chromium, platinum, palladium, magnesium, the zinc forms, more preferably form by at least a metal in gold, silver, the aluminium.Metal species in the metal level 14 can be their monometallic or composition metals.Composition metal can be two or more a alloy of above-mentioned metal, and for example, metal level 14 can be aerdentalloy layer or golden aluminium alloy layer, and wherein silver or golden weight fraction are preferably more than 70%.The thickness of metal level 14 is preferably 0.5 nanometer～200 nanometers, more preferably 1 nanometer～100 nanometers.
Above-mentioned light-emitting component 10 can be widely used on the luminescent device of super brightness and working at high speed, for example in the products such as Field Emission Display, field emission light source or large-scale advertisement display board.With the Field Emission Display is example, the relative field emission cathode array of anode applies forward voltage and forms accelerating field, the electronics of cathode emission, promptly to metal level 14 emitting cathode rays 16, have between microstructural metal level 14 and the light-emitting film 13 and form surface plasma, by the surface plasma bulk effect, the internal quantum efficiency of light-emitting film 13 is improved greatly, the spontaneous radiation that is luminescent material strengthens, and then strengthened the luminous efficiency of luminescent material greatly, thereby solve low this problem of luminescent material luminous efficiency.In addition,, form even interface between whole metal level and the light-emitting film 13, can improve luminous uniformity owing to be that light-emitting film 13 surfaces form the layer of metal layer.
See also Fig. 1 and 2, the flow process of the method for manufacturing luminescent device of the embodiment of the invention is described, this manufacture method comprises the steps:
S01: preparation light-emitting film 13, described light-emitting film has luminescent material;
S02: form a metal level 14 on the surface of light-emitting film 13; And
S03: light-emitting film 13 and metal level 14 are carried out annealing in process under vacuum, make metal level 14 form the metal microstructure structure, the cooling back forms light-emitting component 10.
In step S01, two kinds of structures of corresponding above-described light-emitting film 13: first kind for comprising Y
2-xTb
xSiO
5The light-emitting film of luminescent material, second kind for comprising Zn
2-xMn
xSiO
4The light-emitting film of luminescent material, wherein, 0＜x≤0.3 is preferably 0＜x≤0.2.Light-emitting film 13 can be pre-formed on a translucent or transparent substrate, as substrate, forms light-emitting film then in substrate.Wherein, light-emitting film can adopt methods such as magnetron sputtering, electron beam evaporation, chemical vapour deposition (CVD), molecular beam epitaxy, pulsed laser deposition or spraying thermal decomposition to deposit formation in substrate.
With previously described structure similar, forming metal level 14 herein can be to adopt chemical stability good metal material source deposition to form, the metal that for example is difficult for oxide etch, also can be the metal of using always in addition, be preferably at least a metal in gold, silver, aluminium, copper, titanium, iron, nickel, cobalt, chromium, platinum, palladium, magnesium, the zinc, more preferably by at least a metal in gold, silver, the aluminium.In step S02, this metal level 14 is by above-mentioned at least a metal is formed at light-emitting film 13 surfaces by physics or chemical vapour deposition technique, such as but not limited to the surface that is formed at light-emitting film 13 with sputter or evaporation coating method.The thickness of metal level 14 is preferably 0.5 nanometer～200 nanometers, more preferably 1 nanometer～100 nanometers.
Step S03 is specific as follows: after light-emitting film 13 surfaces form metal level 14, carry out vacuum annealing and handle under 50 ℃～650 ℃, annealing time is 5 minutes～5 hours, naturally cools to room temperature then.Wherein, annealing temperature is preferably 100 ℃～500 ℃, and annealing time is preferably 15 minutes～and 3 hours.
See also Fig. 1 and 3, the flow process of the light-emitting component luminescent method of the embodiment of the invention is described, this luminescent method comprises the steps:
S11: obtain light-emitting component 10 according to aforementioned method of manufacturing luminescent device;
S12: to metal level 14 emitting cathode rays 16, under the exciting of cathode-ray 16, form surface plasma between metal level 14 and the light-emitting film 13, make the luminescent material in the light-emitting film 13 luminous.
Light-emitting component 10 has the front and describes features such as various structures and component.In actual applications, performing step S12 can adopt Field Emission Display or lighting source, under vacuum environment, the relative field emission cathode array of anode applies forward voltage and forms accelerating field, cathode emission cathode-ray 16, under the exciting of cathode-ray 16, electron beam at first penetrating metal layer 14 and then stimulated luminescence film 13 is luminous, in this process, produced the surface plasma bulk effect on the interface of metal level 14 and light-emitting film 13, by this effect the internal quantum efficiency of luminescent material in the light-emitting film 13 is improved greatly, i.e. the spontaneous radiation of luminescent material strengthens, and then has strengthened the luminous efficiency of luminescent material greatly.
Particularly, electron beam penetrating metal layer 14 directly excites as Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4Deng luminescent material, surface plasma is at Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4Form Deng between luminescent material and the metal level 14, promote Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4Luminous.
(Surface Plasma is a kind of ripple along metal and medium interface propagation SP) to surface plasma, and its amplitude is exponential damping with the distance of leaving the interface.When changing the metal surface structure, (Surface plasma polaritons, character SPPs), dispersion relation, excitation mode, coupling effect etc. all will produce great variation to surface plasma excimer.The electromagnetic field that SPPs causes not only can limit light wave and propagate in the sub-wavelength dimensions structure, and can produce and control the electromagnetic radiation from the optical frequency to the microwave band, realizes the active that light is propagated is controlled.Therefore, present embodiment utilizes the excitating performance of this SPPs, increases the optical state density of light-emitting film and strengthens its spontaneous emission rate; And, can utilize the coupling effect of surface plasma, when light-emitting film sends the light time, can with its generation coupled resonance effect, thereby improve the internal quantum efficiency of light-emitting film greatly, improve the luminous efficiency of luminescent material.
Below illustrate Y by a plurality of embodiment
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4The difference of light-emitting component is formed and preparation method thereof, with and aspect such as performance.In following each embodiment, Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4Luminescent material can adopt the commercial goods, directly is used.Certainly, in actual applications, can directly prepare and get.
Embodiment 1
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.94Tb
0.06SiO
5Light-emitting film, utilizing magnetron sputtering apparatus then is the metallic silver layer of 2 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, be cooled to room temperature then annealing in process half an hour under 300 ℃ temperature, obtain the light-emitting component that required yttrium silicate is mixed terbium.As shown in Figure 1, be the structure chart that yttrium silicate is mixed the light-emitting component of terbium, wherein substrate 15 is a quartz substrate, light-emitting film 13 is the Y of preparation
1.94Tb
0.06SiO
5, metal level 14 is the silver layer of 2 nanometers, and the electron beam 16 that electron gun sends is directly beaten on metal level 14, and electron beam 16 is penetrating metal layer 14 at first, and then stimulated luminescence film 13 is luminous.
The yttrium silicate of the cathode-ray bombardment present embodiment that produces with electron gun is mixed the light-emitting component of terbium, produces luminescent spectrum as shown in Figure 4, the luminescent spectrum of curve 11 film when not adding metallic silver layer among the figure; The yttrium silicate that curve 12 makes for present embodiment is mixed the luminescent spectrum of the light-emitting component of terbium, as we can see from the figure, owing to produced the surface plasma bulk effect between metal level and the light-emitting film, light-emitting film when not adding metal level, luminous integrated intensity in the main peak scope of the light-emitting film of present embodiment from 530 nanometers to 570 nanometers is 5 times of the luminous integrated intensity of light-emitting film when not adding metal level, and luminescent properties is significantly improved.
Below the luminescent spectrum of each embodiment all similar with embodiment 1, each light-emitting film also has similar luminous intensity effect, repeats no more below.
Embodiment 2
The selection size is 1 * 1cm
2The quartz substrate of twin polishing, the deposited by electron beam evaporation method makes Y in substrate
1.998Tb
0.002SiO
5Light-emitting film, utilizing magnetron sputtering apparatus is the metallic gold layer of 0.5 nanometer at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1 hour under 200 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 3
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Y with chemical gaseous phase depositing process in substrate
1.995Tb
0.005SiO
5Light-emitting film, utilizing magnetron sputtering apparatus is the metal aluminium lamination of 200 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 hours under 500 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 4
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.992Tb
0.008SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the magnesium metal layer of 100 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 minutes under 650 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 5
The selection size is 1 * 1cm
2The magnesium oxide-based end of twin polishing, form in substrate with molecular beam epitaxial method and to contain Y
1.99Tb
0.01SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the Metal Palladium layer of 1 nanometer at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 3 hours under 100 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 6
The selection size is 1 * 1cm
2The magnesium oxide-based end of twin polishing, form in substrate with atomizing thermolysis process and to contain Y
1.98Tb
0.02SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metal platinum layer of 5 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 15 minutes under 450 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 7
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with pulse laser sediment method and to contain Y
1.97Tb
0.03SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the argent aluminium lamination of 20 nanometers at light-emitting film surface deposition thickness, wherein, the silver in the metal level and the parts by weight of aluminium are respectively 80% and 20%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1.5 hours under 380 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 8
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.96Tb
0.04SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the argent aluminium lamination of 10 nanometers at light-emitting film surface deposition thickness, wherein, the silver in the metal level and the parts by weight of aluminium are respectively 90% and 10%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2.5 hours under 180 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 9
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.95Tb
0.05SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic gold aluminium lamination of 30 nanometers at light-emitting film surface deposition thickness, wherein, the gold in the metal level and the parts by weight of aluminium are respectively 80% and 20%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 280 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.93Tb
0.07SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic gold aluminium lamination of 25 nanometers at light-emitting film surface deposition thickness, wherein, the gold in the metal level and the parts by weight of aluminium are respectively 90% and 10%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 10 minutes under 600 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.92Tb
0.08SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic chromium layer of 120 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 250 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with pulse laser sediment method and to contain Y
1.91Tb
0.09SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metal nickel dam of 40 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 4 hours under 80 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.9Tb
0.1SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the layer of metal cobalt of 180 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1 hour under 400 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.88Tb
0.12SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic iron layer of 160 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 hours under 50 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.85Tb
0.15SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the layer of titanium metal of 80 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 150 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.82Tb
0.18SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metal copper layer of 50 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2.5 hours under 200 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 17
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.8Tb
0.2SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic zinc layer of 150 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 0.5 hour under 350 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 18
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Y
1.7Tb
0.3SiO
5Light-emitting film, utilizing electron beam evaporation equipment is the metallic gold layer of 100 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 0.5 hour under 300 ℃ temperature, is cooled to room temperature then, and the yttrium silicate that obtains present embodiment is mixed the light-emitting component of terbium.
Embodiment 19
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.94Mn
0.06SiO
4Light-emitting film, utilizing magnetron sputtering apparatus then is the metallic silver layer of 3 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, be cooled to room temperature then annealing in process half an hour under 300 ℃ temperature, obtain the light-emitting component that required zinc silicate is mixed manganese.Light-emitting component as shown in Figure 1, the structure with embodiment 1 describes is repeating no more.
The zinc silicate of the cathode-ray bombardment present embodiment that produces with electron gun is mixed the light-emitting component of manganese, produces luminescent spectrum as shown in Figure 5, the luminescent spectrum of curve 21 film when not adding metallic silver layer among the figure; Curve 22 makes the luminescent spectrum that zinc silicate is mixed the light-emitting component of manganese for present embodiment, as we can see from the figure, owing to produced the surface plasma bulk effect between metal level and the light-emitting film, light-emitting film when not adding metal level, the luminous integrated intensity of the light-emitting film of present embodiment from 300 nanometers to 750 nanometers is 5.52 times of the luminous integrated intensity of light-emitting film when not adding metal level, and luminescent properties is significantly improved.
Below the luminescent spectrum of each embodiment all similar with embodiment 19, each light-emitting film also has similar luminous intensity effect, repeats no more below.
Embodiment 20
The selection size is 1 * 1cm
2The quartz substrate of twin polishing, the deposited by electron beam evaporation method makes Zn in substrate
1.998Mn
0.002SiO
4Light-emitting film, utilizing magnetron sputtering apparatus is the metallic gold layer of 0.5 nanometer at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1 hour under 200 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Zn with chemical gaseous phase depositing process in substrate
1.995Mn
0.005SiO
4Light-emitting film, utilizing magnetron sputtering apparatus is the metal aluminium lamination of 200 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 hours under 500 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.992Mn
0.008SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the magnesium metal layer of 100 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 minutes under 650 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 23
The selection size is 1 * 1cm
2The magnesium oxide-based end of twin polishing, in substrate, form Zn with molecular beam epitaxial method
1.99Mn
0.01SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the Metal Palladium layer of 1 nanometer at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 3 hours under 100 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 24
The selection size is 1 * 1cm
2The magnesium oxide-based end of twin polishing, in substrate, form Zn with atomizing thermolysis process
1.98Mn
0.02SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metal platinum layer of 5 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 15 minutes under 450 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 25
The selection size is 1 * 1cm
2The magnesium oxide-based end of twin polishing, in substrate, form Zn with pulse laser sediment method
1.97Mn
0.03SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the argent aluminium lamination of 20 nanometers at light-emitting film surface deposition thickness, wherein, the silver in the metal level and the parts by weight of aluminium are respectively 80% and 20%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1.5 hours under 380 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 26
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.96Mn
0.04SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the argent aluminium lamination of 10 nanometers at light-emitting film surface deposition thickness, wherein, the silver in the metal level and the parts by weight of aluminium are respectively 90% and 10%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2.5 hours under 180 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 27
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.95Mn
0.05SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metallic gold aluminium lamination of 30 nanometers at light-emitting film surface deposition thickness, wherein, the gold in the metal level and the parts by weight of aluminium are respectively 80% and 20%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 280 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 28
The selection size is 1 * 1cm
2The sapphire substrates of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.93Mn
0.07SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metallic gold aluminium lamination of 25 nanometers at light-emitting film surface deposition thickness, wherein, the gold in the metal level and the parts by weight of aluminium are respectively 90% and 10%, are placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 10 minutes under 600 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 29
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.92Mn
0.08SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metallic chromium layer of 120 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 250 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 30
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with pulse laser sediment method in substrate
1.91Mn
0.09SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metal nickel dam of 40 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 4 hours under 80 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 31
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.9Mn
0.1SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the layer of metal cobalt of 180 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 1 hour under 400 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 32
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.85Mn
0.15SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metallic iron layer of 160 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 5 hours under 50 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 33
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.8Mn
0.2SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the layer of titanium metal of 80 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2 hours under 150 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 34
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms Zn with magnetically controlled sputter method in substrate
1.75Mn
0.25SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metal copper layer of 50 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 2.5 hours under 200 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
Embodiment 35
The selection size is 1 * 1cm
2The quartz substrate of twin polishing forms in substrate with magnetically controlled sputter method and to contain Zn
1.7Mn
0.3SiO
4Light-emitting film, utilizing electron beam evaporation equipment is the metallic zinc layer of 150 nanometers at light-emitting film surface deposition thickness, is placed on vacuum degree then less than 1 * 10
-3Under the vacuum environment of Pa, annealing in process is 0.5 hour under 350 ℃ temperature, is cooled to room temperature then, and the zinc silicate that obtains present embodiment is mixed the light-emitting component of manganese.
In each embodiment described above, employing is provided with one deck and has microstructural metal level 14 on light-emitting film 13, this metal level 14 can be under cathode-ray and the interface between the light-emitting film 13 form surface plasma, by the surface plasma bulk effect, the internal quantum efficiency of light-emitting film 13 is improved greatly, make the spontaneous radiation of luminescent material strengthen, and then strengthened the luminous efficiency of luminescent material greatly, thereby solve low this problem of luminescent material luminous efficiency.In the luminescent method of light-emitting component, only need metal level 14 emitting cathode rays are formed surface plasma between metal level 14 and the light-emitting film 13, to strengthen the luminous efficiency of light-emitting film 13, improve its luminous reliability.Because light-emitting component 10 comprises light-emitting film 13 and metal level 14, this double-decker is simple, simultaneously, at light-emitting film 13 and 14 of metal levels even interface is arranged, thereby shows very high uniformity of luminance and stability.In the luminescent method of light-emitting component, only need metal level 14 emitting cathode rays are formed surface plasma between metal level 14 and the light-emitting film 13, can strengthen the luminous efficiency of light-emitting film 13 greatly, improve its luminous reliability.
In the light-emitting component preparation method of the embodiment of the invention, only need on light-emitting film 13, form layer of metal layer 14, annealed then processing, can obtain required light-emitting component 10, this preparation method's technology is simple, reduce cost, have wide production application prospect, especially can be used on the luminescent device of super brightness and working at high speed, as Field Emission Display.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. light-emitting component, it comprises light-emitting film, it is characterized in that, and the surface of described light-emitting film is provided with a metal level, and described metal level has the metal microstructure structure, and described light-emitting film comprises luminescent material.
2. light-emitting component as claimed in claim 1 is characterized in that, the chemical composition of described luminescent material is Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4, wherein, 0＜x≤0.3.
3. light-emitting component as claimed in claim 1 is characterized in that, described metal level is to be made of aperiodicity, the discrete metallic crystal of arranging.
4. light-emitting component as claimed in claim 1 is characterized in that, described light-emitting film is being provided with a transparent substrate or translucent substrate with another the surperficial relative surface that is provided with metal level.
5. light-emitting component as claimed in claim 1 is characterized in that, the metal of described metal level is at least a in gold, silver, aluminium, copper, titanium, iron, nickel, cobalt, chromium, platinum, palladium, magnesium, the zinc.
6. light-emitting component as claimed in claim 1 is characterized in that, described metal layer thickness is 0.5 nanometer to 200 nanometer.
7. method of manufacturing luminescent device, it comprises the steps:
The preparation light-emitting film, described light-emitting film has luminescent material;
Form a metal level on the surface of described light-emitting film; And
Described light-emitting film and metal level are carried out annealing in process under vacuum, make described metal level form the metal microstructure structure, the cooling back forms described light-emitting component.
8. method of manufacturing luminescent device as claimed in claim 7 is characterized in that, the chemical composition of described luminescent material is Y
2-xTb
xSiO
5Or Zn
2-xMn
xSiO
4, wherein, 0＜x≤0.3.
9. method of manufacturing luminescent device as claimed in claim 7 is characterized in that described light-emitting film is pre-formed on half transparent substrate or transparent substrate.
10. the luminescent method of a light-emitting component, it comprises the steps:
Obtain light-emitting component according to each described method of manufacturing luminescent device of claim 7-9; And
To metal level emitting cathode ray, between cathode-ray exciting lower metal layer and light-emitting film, form surface plasma, make the luminescent material in the light-emitting film luminous.
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Cited By (1)
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