CN102033076A - Inspection device and inspection method - Google Patents
Inspection device and inspection method Download PDFInfo
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- CN102033076A CN102033076A CN2010102999750A CN201010299975A CN102033076A CN 102033076 A CN102033076 A CN 102033076A CN 2010102999750 A CN2010102999750 A CN 2010102999750A CN 201010299975 A CN201010299975 A CN 201010299975A CN 102033076 A CN102033076 A CN 102033076A
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- 238000007689 inspection Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000010894 electron beam technology Methods 0.000 claims abstract description 175
- 238000009413 insulation Methods 0.000 claims abstract description 83
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- 239000000758 substrate Substances 0.000 claims description 44
- 238000012360 testing method Methods 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 22
- 238000005286 illumination Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 34
- 230000001678 irradiating effect Effects 0.000 abstract description 33
- 238000007599 discharging Methods 0.000 description 45
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- 238000011156 evaluation Methods 0.000 description 4
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- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
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- 238000010521 absorption reaction Methods 0.000 description 1
- 238000012550 audit Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
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Abstract
The invention provides an inspection device and an inspection method, capable of high-accurately inspecting the defect that a part should be a conduction part is changed into an insulation part for a base plate with a circuit pattern including the insulation part and the conduction part. The base plate (wafer W) with the circuit pattern including the insulation part and the conduction part on its surface is loaded in a loading stand (22) in a vacuum container (21). And then, the electron beam with charge density of below 6.7X10-3C/nm2 is irradiated to the wafer W and the secondary electron emitted by irradiating the electron beam is inspected. The irradiation position of the electron beam moves relative to the loading stand and the data for associating the inspection result of the emitted secondary electron with the irradiation position of the electron beam on the wafer (W) is obtained in the whole inspection object area of the wafer (W) and whether the defect that the part should be the conduction part is changed into the insulation part is present or not is inspected according to the data.
Description
Technical field
The present invention relates to the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in skin section is carried out becoming as the position of conductive part the technology of inspection of the defective of insulation division.
Background technology
About in the manufacturing process of semiconductor device, check be formed on semiconductor wafer (below, be called " wafer ") on the method for defective of pattern, known have a SEM (Scanning Electron Microscope: the scanning electron microscope) inspection method of formula (for example, with reference to patent documentation 1) that has adopted electron beam.
As shown in figure 12, the inspection method of this SEM formula is: the wafer W irradiating electron beam (primary electron) of electron beam transmitter unit 11 on mounting table 12 from the upper side that is arranged at vacuum tank 10, detect the secondary electron of emitting from the top layer of wafer W with detecting device 13.By injecting electron beam, emit: the reflection electronic of elasticity reflection electronic bundle and inner owing to heating or migration etc. make the energy secondary electron littler than electron beam in wafer W from wafer W.At this moment, if make accelerating potential excessive, then primary electron (reflection electronic) is more than secondary electron, sets lowlyer than certain value so will speed up voltage, utilizes secondary electron to carry out defects detection.
But, for wafer W, in the wiring layer as conductive part (part that is made of electric conductor) was embedded in as the structure in the insulation course of insulation division (part that is made of insulator), bad etc. the causing of imbedding of video picture defective when forming owing to the resist pattern sometimes or wiring should form zone porose or that do not engage with the substrate electricity as the position of conductive part former.At this, generally speaking, after electron beam had just shone, the discharging amount of the secondary electron of insulation division was more than conductive part.Its reason is, because electron beam is absorbed manyly by conductive part, so the discharging amount of secondary electron tails off, and the uptake of insulation division is seldom, thus secondary electron to emit quantitative change many.
On the other hand, after insulation division was emitted secondary electron in a large number, when irradiating electron beam, the discharging amount of the secondary electron of conductive part was more than insulation division after electron beam has just shone.Its reason is, owing to the positive charge that charges of emitting of the secondary electron after insulation division has just shone by electron beam, so even irradiating electron beam after this also is difficult to emit secondary electron.Like this, at conductive part and insulation division, the discharging amount difference of secondary electron, therefore can utilize its secondary electron discharging amount difference and will be present in former should the detection and be defective as the insulation division at the position of conductive part.In fact, the secondary electron number of emitting during to irradiating electron beam is counted, obtain the brightness corresponding with this count number, make the image of the electron beam irradiated site in the wafer W with the related demonstration of above-mentioned brightness, the difference according to the brightness of conductive part and insulation division in this image is carried out the detection of defective.
But along with the development that pattern becomes more meticulous, the live width of wiring layer becomes narrower, and it is littler that rejected region becomes, and also is difficult to use existing method to detect defective accurately according to image even therefore might improve the sharpness of image.
Patent documentation 1: TOHKEMY 2002-216698 number
Summary of the invention
The present invention finishes in order to address this is that, and its purpose is to provide a kind of can detect the technology that should become the defective of insulation division as the position of conductive part accurately to the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in skin section.
Therefore, testing fixture of the present invention is used to check the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in its skin section, it is characterized in that, comprising:
Vacuum tank, portion is provided with the mounting table that is used for the mounting aforesaid substrate within it;
Be used for carrying out the vacuum exhaust unit of vacuum exhaust in the above-mentioned vacuum tank;
Being used for the irradiation of the substrate on above-mentioned mounting table electric density is 6.7 * 10
-3C/nm
2The electron beam illumination unit of following electron beam;
For the whole inspection subject area to aforesaid substrate is carried out electron beam scanning and is made the irradiation position of electron beam and the mobile unit that mounting table relatively moves;
Be used for electronic detection unit that the secondary electron of emitting from substrate by the irradiation of above-mentioned electron beam is detected;
Obtain the unit of obtaining of data that the irradiation position with the electron beam on the testing result of above-mentioned electronic detection unit and the substrate is associated; And
Be used for whether having become the inspection unit that the defective of insulation division is checked as the position of conductive part according to above-mentioned data correspondence.
At this moment, above-mentioned electron beam illumination unit comprises the electron beam transmitter unit of divergent bundle and makes from the condenser lens of this electron beam transmitter unit ejected electron beam convergence on substrate that the electric density of above-mentioned electron beam is set by the focal position of adjusting above-mentioned condenser lens.
In addition, inspection method of the present invention is used to check the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in skin section, it is characterized in that, comprising:
Aforesaid substrate is positioned on the mounting table in the vacuum tank, and to carrying out the step of vacuum exhaust in the above-mentioned vacuum tank;
To the irradiation of the substrate on above-mentioned mounting table electric density is 6.7 * 10
-3C/nm
2The step of following electron beam;
For the whole inspection subject area to aforesaid substrate is carried out electron beam scanning and is made the irradiation position of electron beam and the step that mounting table relatively moves;
The step that the secondary electron of emitting by the irradiation of above-mentioned electron beam is detected;
Obtain the step of the data that the irradiation position with the electron beam on the testing result of above-mentioned secondary electron of emitting and the substrate is associated; And
Whether become the step that the defective of insulation division is checked according to above-mentioned data correspondence as the position of conductive part.
According to the present invention, be 6.7 * 10 owing to shone electric density to substrate
-3C/nm
2Following electron beam, thus with irradiation electric density than 6.7 * 10
-3C/nm
2The situation of big electron beam is compared, and it is many that electron beam just shine afterwards the secondary electron quantitative change of emitting from insulation division.Therefore, at insulation division, the positive charge quantitative change that is recharged after this secondary electron is emitted is many, then during irradiating electron beam, near the insulation division in conductive part, the secondary electron of being emitted attracted to the insulation division side, forms the zone that the discharging amount of obvious secondary electron lacks than conductive part.Thus, when the corresponding data of irradiation position of the electron beam on testing result that obtains the discharging amount that makes above-mentioned secondary electron and the substrate, in zone with former defective that should become insulation division as the position of conductive part, be not only defective and around defective, the above-mentioned secondary electron amount that detects is also lacked than conductive part, so it is big that defective obviously becomes, and can detect defect part accurately.
Description of drawings
Fig. 1 be the expression embodiments of the present invention testing fixture an example longitudinal sectional view and be arranged on the structural drawing of the control part in this testing fixture.
Fig. 2 is the vertical view that is illustrated in the vertical view of the unit area (frame) divided on the substrate and an example of unit picture element and is illustrated in the example of the mensuration figure that obtains when checking.
Fig. 3 is the synoptic diagram of a part of the skin section of expression substrate.
Fig. 4 is the longitudinal sectional view that the electric density of explanation electron beam is adjusted.
Fig. 5 is the process flow diagram of an example of expression inspection method of the present invention.
Fig. 6 is the vertical view of the example of expression mensuration figure.
Fig. 7 is the longitudinal sectional view of a part of skin section of expression substrate and the vertical view of expression mensuration figure.
Fig. 8 is the longitudinal sectional view of a part of skin section of expression substrate and the vertical view of expression mensuration figure.
Fig. 9 is the performance plot of the relation of expression electric density and secondary electron discharging amount.
Figure 10 is the performance plot that changes the time of expression secondary electron coal caving ratio.
Figure 11 is another routine vertical view of expression defect inspection.
Figure 12 is the longitudinal sectional view of an example of the existing testing fixture of expression.
Symbol description:
W: wafer
2: testing fixture
21: vacuum tank
22: mounting table
23:X, Y driving mechanism
3: electron emission unit
32: condenser lens
35: electronic detection unit
37: vacuum pump
4: control part
44: display part
45: the defects detection program
46: defect information is made program
51: insulation division (insulation course)
52: conductive part (wiring layer)
53: defective
Embodiment
An embodiment of testing fixture of the present invention is described with reference to Fig. 1.Among Fig. 1 21 is vacuum tanks, and the bottom in this vacuum tank 21 is provided with the mounting table 22 that is used for the mounting wafer W.This mounting table 22 constitutes can utilize X-Y driving mechanism 23 to move along horizontal direction.Be provided with the electrostatic chuck 24 that is used to keep wafer W on the surface of mounting table 22, and, in the inside of mounting table 22, and the conveying arm mechanism of not shown outside between be provided with and be used to join the not shown lifter pin of wafer W.Be provided with in the inside of this mounting table 22 and be used for cooling body 25 that the wafer W that heats up owing to the electron beam irradiation is cooled off.This cooling body 25 for example constitute and the outside of vacuum tank 21 between carry out refrigerant cycle, supply with backside gas from the not shown gas supply port of opening on mounting table 22 to the rear side of wafer W, carry out the heat interchange between this cooling body 25 and the wafer W apace.Connect the power supply 26 that is used for wafer W is applied negative voltage on this mounting table 22, this power supply 26 is being brought into play and is being made the near (EB (Electron Beam): the effect that speed primary electron) is slack-off of ejected electron bundle wafer W.
In addition, be provided with electron emission unit 3 at the top of vacuum tank 21 in the mode relative to the wafer W divergent bundle with mounting table 22.Be connected with the power supply 31 that is used to apply negative voltage on this electron emission unit 3, the difference of the voltage that is applied at the power supply 26 of this power supply 31 and the mounting table of having stated 22 becomes the accelerating potential of the electron beam that shines wafer W.And then, between electron emission unit 3 and mounting table 22, be provided with aperture that passes through scope 33 that is used to make the condenser lens 32 that focuses on from electron emission unit 3 ejected electron bundles and restriction electron beam and a plurality of scanning yokes 34 that are used for scanning beam.And then, between mounting table 22 and scanning yoke 34, be provided with the electronic detection unit 35 that is used to detect by the irradiation of electron beam the secondary electron of emitting from wafer W.
Above-mentioned condenser lens 32 is made of the magnetic lens that has for example utilized the magnet effect, flows through DC current in the electric wire that is wound in coiled type in the mode of passing through the zone of surrounding electron beam, generates the magnetic line of force of target rotation thus, produces the lensing to electron beam.Therefore, flow through the current value of coil, can adjust the intensity (focal length) of lens by change.Present embodiment is as described later the electric density of electron beam to be controlled at 6.7 * 10 by the focal position of adjusting condenser lens 32
-3C/nm
2Below.Except the focal position of adjusting condenser lens 32, can also adjust the electric density that scope is come controlling electron beam of passing through of electron beam by utilizing aperture 33.
Constituted the electron beam illumination unit by above-mentioned electron beam transmitter unit 3 and condenser lens 32, it is 6.7 * 10 that this electron beam illumination unit is used for the irradiation of the wafer W on the above-mentioned mounting table 22 electric density
-3C/nm
2Following electron beam.In addition, constituted mobile unit by above-mentioned X-Y driving mechanism 23 and scanning yoke 34, this mobile unit is for to the whole inspection subject area scanning beam of wafer W and the irradiation position of electron beam and mounting table are relatively moved.
Be formed with exhausr port 36 in the bottom of vacuum tank 21, on this exhausr port 36, be connected with the vacuum pump 37 that becomes the vacuum exhaust unit via valve V1.On the sidewall of vacuum tank 21, be formed with delivery port 38, in vacuum tank 21, move into wafer W via this delivery port 38.
This testing fixture 2 has the control part 4 that is made of for example computing machine.This control part 4 has CPU41, storer 42, program storage part 43, display part 44 etc., stores defect testing program 45 and defect information and make program 46 etc. in said procedure storage part 43.Said procedure for example is stored in the storage parts 47 as storage medium such as hard disk, CD, magneto-optic disk (MO) and memory card, and is installed to control part 4 from storage part 47.
Above-mentioned defects detection program 45 is to be used for the program of wafer W being carried out defect inspection by each of control testing fixture 2.At this, when defect testing, for example shown in Fig. 2 (a), the surface of wafer W is divided into a plurality of cut zone (frame) F that is made of tetragonal zone roughly checks.That is to say,, carried out after the detection of secondary electron of this frame F frame F irradiating electron beam, the position of the frame F of mobile irradiating electron beam successively, its result carries out the scanning of the whole inspection subject area of wafer W.This inspection subject area is meant that the circuit that is equivalent to the wafer W surface forms the zone in zone.
Shown in Fig. 2 (a), this frame F be will show along transverse row the beam zone b of unit of a plurality of for example n (n is the integer 2 or more) unit picture element a longitudinally arrange a plurality of for example m individual (m is the integer more than 2) and constitute.This unit picture element a is meant the unit area of the beam spot of irradiating electron beam.That is to say, with the stipulated time to certain unit picture element a irradiating electron beam after, utilize scanning yoke 34 to make this electron beam move successively and move to next unit picture element a along directions X.The mobile number of times of this moment be (n 1) inferior, for example for hundreds of time, in the beam zone b of unit, have n unit picture element a.To the time of unit picture element a irradiating electron beam for example is 10 * 10
-9About second, will be made as single pass to a unit beam zone b internal radiation electron beam.Utilize the coil 34 that for example constitutes to move and forms m the regional b of such unit beam successively along the Y direction off and on by a plurality of scanning yokes, with it as 1 frame.For example the size of 1 frame is about 500 * 6000 pixels.At this moment, the size of unit picture element a changes by the focal position of adjusting condenser lens 32 as described later.Then, utilize X-Y travel mechanism 23 that the wafer W side is moved successively, check the examination scope (frame) of appointment successively.
Above-mentioned defects detection program 45 constitutes: in order to obtain the data of all above-mentioned frame F, gated sweep coil 34 and X-Y travel mechanism 23, and promptly make data by the secondary electron amount that the irradiation of electron beam is emitted according to detection limit from the secondary electron of electronic detection unit 35.Because the secondary electron of being emitted is counted in electronic detection unit 35, so as described later,, for example corresponding with above-mentioned aggregate-value brightness is gathered as data by the count number of each unit picture element a accumulative total secondary electron.
In this embodiment, with three kinds of brightness of the corresponding preparation of aggregate-value of the count number of secondary electron.That is to say, carry out following setting: when the aggregate-value of above-mentioned secondary electron is bigger than threshold X 1, show with the brightest brightness 61, when the aggregate-value of secondary electron showed with the darkest brightness 62 than threshold X in 2 hours, show with middle brightness 63 under the situation in addition.
At this, the substrate of using this inspection method be wafer W for example shown in the vertical view of the cut-open view of Fig. 3 (a) and Fig. 3 (b) like that, be formed with circuit pattern in its skin section, this circuit pattern comprises insulation division 51 and conductive part 52, for example imbeds conductive part 52 as wiring layer in insulation course (insulation division) 51.When to such wafer W irradiating electron beam, as putting down in writing in " background technology ", with regard to the discharging amount (emitting quantity) of secondary electron, after electron beam has just shone, insulation division 51 is than conductive part more than 52, even irradiating electron beam after this, insulation division 51 is charged to positive charge, thus the secondary electron of conductive part 52 to emit quantitative change many.
At this moment, from evaluation experimental described later as can be known, the discharging amount of secondary electron sharply tails off after electron beam has just shone, after irradiation 1 * 10
-9Therefore constant after second becomes the state that secondary electron is difficult to emit after electron beam has just shone in insulation division 51.With respect to this, if from conductive part 51 irradiating electron beams, then not only after just having shone, and also continue to emit secondary electron afterwards, so to the time ratio 1 * 10 of each unit picture element a irradiating electron beam
-9Second long, during secondary electron quantity that accumulative total is emitted thus, its result, the aggregate-value of the secondary electron quantity of conductive part 52 is bigger than insulation division 51.
At this moment, be 6.7 * 10 when shining electric density
-3C/nm
2During following electron beam, from evaluation experimental described later as can be known, with electric density than 6.7 * 10
-3C/nm
2Big situation is compared, and the discharging amount of the secondary electron after electron beam has just shone is more.At this, when the discharging amount of considering the secondary electron of insulation division 51 after electron beam has just shone than conductive part 52 for a long time, infer the discharging amount that how much depends on the secondary electron in the insulation division 51 of the discharging amount of this secondary electron.Like this, be 6.7 * 10 when shining electric density
-3C/nm
2During following electron beam,,, become the more difficult state of emitting of secondary electron so at this insulation division 51, the charging quantitative change of positive charge is many owing to emit a large amount of secondary electrons from insulation division 51.
And in conductive part 52, the irradiation by electron beam continues to emit secondary electron, thus after insulation division 51 is recharged positive charge, as stating, compare with insulation division 51, secondary electron to emit quantitative change many.But because the charge volume of positive charge in the insulation division 51 is more, so infer at the boundary vicinity of conductive part 52 with insulation division 51, the positive charge that the secondary electron of emitting from conductive part 52 is insulated portion 51 attracts, and produces captive phenomenon.
Therefore, at the near zone of the insulation division 51 of conductive part 52, secondary electron is irrelevant with emitting, and can not use electronic detection unit 35 to detect, and uses the secondary electron quantity of electronic detection unit 35 countings to lack than conductive part 52, becomes the value near insulation division 51.Thereby when the aggregate-value of the count number of obtaining secondary electron, this aggregate-value becomes many according to the order of the few zone＞insulation division 51 of the discharging amount of the obvious secondary electron in conductive part 52＞conductive part 52.Therefore, when obtain threshold X 1, X2 in advance according to the aggregate-value of secondary electron so that in conductive part 52 greater than threshold X 1, less than threshold X 2, the zone that then discharging amount of the obvious secondary electron in conductive part 52, insulation division 51 and the conductive part 52 is few can show in enough different brightness in insulation division 51.
Like this, defects detection program 45 constitutes and obtains the data that the detection limit that passes through the secondary electron that irradiating electron beam emits that will obtain by each above-mentioned unit picture element a is associated with the irradiation position of electron beam, and then utilize this program 45, for example make mensuration figure M such shown in Fig. 2 (b) according to above-mentioned data by each frame F.This mensuration figure M has shown on certain position on the wafer W brightness of corresponding unit picture element a, as stating, uses the brightness 61～63 corresponding with the aggregate-value of the count number of secondary electron to show.In this embodiment, conductive part 52 usefulness brightness 61 show that insulation division 51 usefulness brightness 62 show that the zone that the discharging amount of the obvious secondary electron in the conductive part 52 is few shows with brightness 63.
Above-mentioned defect information is made program 46 and is constituted according to above-mentioned resulting mensuration figure M and make defect information.It has following effect: deduct the standard drawing M0 that makes at flawless wafer W from for example made mensuration figure M, perhaps will be amplified by the defect map M1 that this subtraction obtains and show on display part 44.This defect map M1 shows the lip-deep position and the defect part of wafer W accordingly.In this embodiment, this defect information is made program 46 and is equivalent to be used for the device that has or not that data inspection that the irradiation position according to the detection limit of the secondary electron that will emit by irradiating electron beam and electron beam is associated should become the defective of insulation division 51 as the position of conductive part 52.
In addition, storer 42 is devices of the above-mentioned standard drawing M0 of storage or said determination figure, defect map M1, and these mensuration figure M etc. for example stores by each frame.And then, for example in storer 42, have the accelerating potential that writes the electron beam that shines to wafer W or set the zone that electric density, the pressure when checking, temperature etc. are checked the value of parameter, when respectively the ordering of CPU executive routine, read these and check parameter, be sent to each position of this testing fixture with this parameter value control signal corresponding.
Then, the inspection method of having used above-mentioned testing fixture is described.At first, utilize not shown conveying mechanism that wafer W is transported in the testing fixture 2, and be positioned on the mounting table 22.Then, with this wafer W Electrostatic Absorption, and temperature is adjusted to the temperature of regulation as required, and will be set at the specified vacuum degree in the vacuum tank 21.In addition, adjust the voltage of the power supply of having stated 26,31, the feasible accelerating potential that supplies to the electron beam of wafer W is below the 2000eV.When making accelerating potential excessive, the discharging amount of primary electron is bigger than secondary electron, and insulation division can not be charged positive charge, so preferred accelerating potential is set at below the 2000eV.
In addition, adjust supplying electric current, make that the electric density of electron beam is 6.7 * 10 condenser lens 32
-3C/nm
2Below.At this, if the opening of accelerating potential or aperture 33 is identical, then shown in Fig. 4 (a), when on the focal position that makes electron beam and the wafer W surface when consistent, it is big that the electric density of this electron beam becomes, shown in Fig. 4 (b), when the electric density of this electron beam when the focal position is removed on the wafer W surface diminishes.At this, among Fig. 4 (b), dot the situation that the focal position is set at the upper side of wafer W, be illustrated in the situation of the lower side setting focal position of wafer W with dot-and-dash line.Like this, by adjusting the supplying electric current to condenser lens 32, the focal position of controlling electron beam (degree of focus) can carry out the control of the electric density of electron beam.Thus, electric density is low more, and is big more to the beam spot zone of the electron beam of wafer W irradiation.
Then, on one side utilize 45 pairs of defect testing programs to check that the frame F1 of object shines electron beam one scan edge of charging usefulness, counts (step S1 among Fig. 5) by each unit picture element a to the discharging amount of secondary electron.At this, the beam spot zone of electron beam for example is the some zone of diameter 10nm, as unit picture element a, wafer W is moved the starting point of for example initial irradiation, with to the frame F1 irradiating electron beam that comprises this unit picture element a in the upper end side of the left end side of the directions X of wafer W shown in Figure 2 and Y direction.Then, unit picture element a from starting point in this frame F1 begins irradiating electron beam, utilize scanning yoke 34 make electron beam in directions X moves and has scanned unit beam zone b after, utilize scanning yoke 34 to make electron beam move and scan the beam zone b of next unit along the Y direction.Like this, utilize all the unit picture element a irradiating electron beams successively in frame F1 of this scanning yoke 34, by each unit picture element a to counting by shining the secondary electron quantity that this electron beam emits.
Like this, behind this frame F1 WBR electron beam, to identical frame F1 irradiating electron beam on one side one scan edge, the secondary electron quantity of emitting by each unit picture element a is counted (step S2) once more.Then, in this frame F1, obtain the aggregate-value (step S3) of the count number of the secondary electron that obtains by step S1 and step S2, obtain the data that this aggregate-value is associated with position on the wafer by each unit picture element a.
Then, in this frame F1,, make corresponding brightness and the corresponding mensuration figure M in the position on the wafer W of aggregate-value that makes with the count value of secondary electron, and be stored in the storer 42 (step S4) according to the data of each above-mentioned unit picture element a.Mensuration figure M when for example having the former defective 53 that should become insulation division shown in Fig. 6 (a) as the position of conductive part 52, measure among the figure M at this, conductive part 52 usefulness brightness 61 show, insulation division 51 usefulness brightness 62 show that the few zone of exit dose of obvious secondary electron shows with brightness 63 in the conductive part 52.
Then, detect defect part (step S5) according to said determination figure M.For example utilize defect information to make program 46, from mensuration figure M, deduct in advance the standard drawing M0 (with reference to Fig. 6 (b)) of the frame of the correspondence that flawless wafer W is made equally, obtain defect map M1 (with reference to Fig. 6 (c)), M1 is shown enlarged on the display part 44 with this defect map.Shown in Fig. 6 (c), in defect map M1, has the unit picture element a of defective 53 and owing to this defective 53 is caught the unit picture element a and the corresponding demonstration in the lip-deep position of wafer W that secondary electron tails off the discharging amount of obvious secondary electron.
Then similarly, utilize mounting table 22 that wafer W is moved successively along horizontal direction,, the secondary electron quantity of being emitted is counted and accumulative total, obtain the defect map M1 in this frame 2 to the frame F2 irradiating electron beam of next one inspection object.Like this, obtain the defect map M1 of all the frame F in the inspection subject area of wafer W, entire frame F is carried out the detection (step S6) of defective, obtain making it in each coordinate position with for example wafer W the corresponding check result figure of zero defect arranged.Then, wafer W is taken out of from testing fixture 3 by not shown conveying mechanism.
The present invention is by electric density is made as 6.7 * 10
-3C/nm
2Below and found that the result that electron beam just shine more than the discharging amount of secondary electron afterwards finishes.At this, generally speaking carry out as follows: by the electric density that increases electron beam the discharging amount from the secondary electron of conductive part 52 is increased, find defective easily with the contrast of the brightness of insulation division 51 thereby increase conductive part 52.But in the method, because the size of defect part do not change, so might the over sight (OS) defective.
Therefore, present inventors carry out evaluation experimental by changing various electric density, and it found that following situation: by electric density is made as 6.7 * 10
-3C/nm
2Below, the discharging amount of the secondary electron after electron beam just shine is extremely many, and the part of the secondary electron that generation is emitted from conductive part 52 is insulated the phenomenon of the positive charge attraction of portion 51.
At this, Fig. 7 is the corresponding figure that illustrates of mensuration figure M of longitudinal sectional view and this skin section of a part that makes the skin section of wafer W, left side among Fig. 7 illustrates electron beam and has just shone state afterwards, and the right side illustrates electron beam and just shone the state that has passed through the stipulated time afterwards.At this, this stipulated time is meant that electron beam just shine afterwards 10 * 10
-9Second.Shown in the left figure of Fig. 7 after electron beam has just shone from the more situation of discharging amount of the secondary electron of insulation division 51, the right side of Fig. 7 there is shown the more state of positive charge amount that is charged at insulation division 51.
Like this, when the positive charge amount of being charged at insulation division 51 more for a long time, as stating, the positive charge that the part of the secondary electron of emitting from conductive part 52 is insulated portion 51 attracts, and the boundary vicinity of the insulation division 51 in conductive part 52 obviously produces the zone that the discharging amount of secondary electron lacks than conductive part 52.Thus, when the corresponding data of irradiation position of the electron beam of obtaining the discharging amount that makes secondary electron and wafer W, be not only this defective 53, and it is also different with conductive part 52 at the secondary electron discharging amount of peripheral part of defective 53, so it is big that defective 53 obviously becomes, can high precision and easily carry out the detection of defective.
At this moment, when the corresponding data of irradiation position that obtain the electron beam that makes brightness corresponding and wafer W and when making mensuration figure M with the discharging amount of secondary electron, shown in the right figure of Fig. 7, in zone with defective 53, be not only this defective 53, and the brightness of peripheral part of defective 53 is also different, becomes big so be shown as defective 53.Therefore, as Fig. 6 (c), when obtaining defect map M1 when from mensuration figure M, deducting standard drawing M0, because the peripheral part that comprises defective 53 is as defective and residual, so even under the small situation of defective, also can high precision and easily carry out its detection.For the ease of diagram, omitted profile line in the cut-open view of the wafer W skin section of left figure among Fig. 7, and the mensuration figure M of electron beam after just shine be illustrated in firm irradiation and finish afterwards in any zone from conductive part 52 and insulation division 51, defective 53 and emit secondary electron in large quantities, so the state that shows with brightness 61 in whole zone.
On the other hand, in the electric density of electron beam than 6.7 * 10
-3C/nm
2Under the big situation, the discharging amount of the secondary electron after electron beam has just shone is 6.7 * 10 than electric density
-3C/nm
2Few when following, so as shown in Figure 8, the discharging amount from the secondary electron of insulation division 51 that electron beam just shine afterwards tails off.Even make insulation division 51 be recharged positive charge, also can not attract the secondary electron of emitting from conductive part 52 because this charge volume is few by emitting of this secondary electron.Therefore, when similarly making mensuration figure M, shown in the right figure of Fig. 8, even insulation division 51 brightness 62,61 different with conductive part 52 usefulness shows, can not around defective 53, use the brightness different to show with conductive part 52, so on mensuration figure M, can not change the size of defective 53, under defective 53 is small situation, cause over sight (OS) sometimes.In the left figure of Fig. 8,, omitted profile line in the cut-open view of wafer W skin section, and among the mensuration figure M after electron beam has just shone, shown with identical brightness 61 in addition at All Ranges for the ease of diagram.
Like this, according to above-mentioned embodiment, be 6.7 * 10 owing to shone electric density
-3C/nm
2So following electron beam is can high precision and easily detect defective 53 on the pattern that should become insulation division as the position of conductive part.And, as above-mentioned defective 53, defective that comprises the defective that should constitute by the position that is not electrically connected as the position of conductive part and constitute by the hole in the conductive part etc. with substrate, because these defectives all are to become the defective of insulation division as the position of conductive part, so can detect accurately.
The evaluation experimental example of the discharging amount of relevant secondary electron when the wafer W irradiating electron beam then, is described.
(experimental example 1)
Use above-mentioned testing fixture, with Fig. 3 in the same manner, at the wafer W that is formed with the pattern of having imbedded conductive part 52 in insulation course 51 in skin section, the electric density that changes electron beam is come irradiating electron beam, measures the secondary electron discharging amount of this moment.This moment, the accelerating potential of electron beam was made as below the 2000eV, and the electric density of electron beam is to change focal length by the current value that changes supply condenser lens 32 to adjust.In addition, the secondary electron discharging amount is by beginning to 10 * 10 from irradiating electron beam
-9The variation of the total pairing brightness of the count value of the secondary electron till after second is obtained.
Fig. 9 illustrates this result.Transverse axis is represented the electric density of electron beam among the figure, and the longitudinal axis is represented the secondary electron discharging amount, and as stating, the secondary electron discharging amount is obtained according to the variation of brightness, and institute thinks arbitrary scale.As shown in Figure 9, electric density is more little, begins to 10 * 10 from irradiating electron beam
-9Second the back till the secondary electron discharging amount many more, when electric density than 6.7 * 10
-3C/nm
2When big, be considered to the secondary electron discharging amount and almost do not change.
(experimental example 2)
And then, be 6.7 * 10 making electric density
-3C/nm
2Below, be 1 * 10 in this embodiment
-3C/nm
2About situation (experimental example); With making electric density is than 6.7 * 10
-3C/nm
2Big value is 10 * 10 in this embodiment
-3C/nm
2About situation (comparative example) in, to the wafer W irradiating electron beam, measure the secondary electron discharging amount of this moment.At this moment, the accelerating potential of electron beam is below the 2000eV, and the electric density of electron beam is to adjust by the focal length that changes condenser lens 32.In addition, the secondary electron discharging amount is according to beginning to 10 * 10 from irradiating electron beam
-9The variation of the total pairing brightness of the count value of the secondary electron after second is obtained.
Figure 10 illustrates this result.Time after transverse axis is represented to begin from irradiating electron beam among the figure, the longitudinal axis is represented the secondary electron coal caving ratio, and experimental example dots measurement result, and comparative example is represented measurement result with solid line.At this, the secondary electron coal caving ratio is a primary electron quantity of pointing to the wafer W irradiation and the ratio of emitting quantity from the secondary electron of wafer W inside.As shown in figure 10, be 6.7 * 10 in electric density
-3C/nm
2In the following experimental example, with electric density than 6.7 * 10
-3C/nm
2Big comparative example is compared, and being considered to electron beam, just shine secondary electron coal caving ratio afterwards very big.In addition, no matter be that experimental example or comparative example have all been determined following situation: even the secondary electron coal caving ratio of electron beam after just shine is very big, also can after after electron beam shines 1 * 10
-9The drastic change of having to go to the toilet of second following utmost point short time is little, and the secondary electron coal caving ratio roughly is stable at certain level.
Result according to these experimental examples 1 and experimental example 2 can be regarded as: by irradiation electric density is 6.7 * 10
-3C/nm
2Following electron beam, with irradiation electric density than 6.7 * 10
-3C/nm
2The situation of big electron beam is compared, and it is very many that electron beam just shine secondary electron discharging amount afterwards, can realize the catching the secondary electron of emitting from conductive part of being undertaken by the positive charge that insulation division charged.
In addition, according to these results, in the present invention, be 6.7 * 10 in irradiation electric density
-3C/nm
2During following electron beam, electric density is than 0 big value, and should be worth more little, secondary electron discharging amount after electron beam has just shone is more, so the lower limit of electric density so long as than 0 big value and can realize that the value that the portion that is insulated catches the secondary electron of emitting from conductive part gets final product, and does not set the technical meaning of numerical value.But, if set lower limit obstinately, then emit the such viewpoint of quantity from what can measure secondary electron accurately, lower limit is made as 1 * 10
-4C/nm
2More than.
More than, in the above-described embodiment, will be to checking the frame irradiating electron beam of object, carry out the operation of the secondary electron number count that secondary emits thus, and obtained the aggregate-value of the secondary electron of being emitted, but, shine above-mentioned electron beam and operation that the secondary electron quantity of being emitted is counted also can be once.As stating, the irradiation time of electron beam is each unit picture element a for example 10 * 10
-9Second, even also can realize once that by irradiation insulation division is recharged positive charge, and can catch the secondary electron of emitting from conductive part, this is obviously to draw from the experimental example of Figure 10.But, it is many more to implement number of times, insulation division 51, conductive part 52 and just big more as the difference of the aggregate-value of emitting secondary electron quantity in the few zone of the discharging amount of the obvious secondary electron of conductive part are so be more than the secondary to the frame irradiating electron beam of checking object and the operation that the secondary electron quantity of emitting is thus counted preferably.
And then, be 6.7 * 10 in that the frame of checking object is shone electric density
-3C/nm
2When electron beam is used in following charging, the secondary electron quantity of emitting by the irradiation of electron beam is not counted, during then to identical frame irradiating electron beam, the situation that the secondary electron quantity of emitting by the irradiation of electron beam is counted is also contained in the scope of technology of the present invention.
And then when electron beam was used in the frame irradiation charging of checking object, irradiation electric density was 6.7 * 10
-3C/nm
2Following electron beam, and identical frame once more during irradiating electron beam, changed to electric density than 6.7 * 10
-3C/nm
2The situation that big value is shone is also contained in the scope of technology of the present invention.
And then, in the present invention, the data that the irradiation position of the electron beam on the testing result of the secondary electron that irradiation that will be by electron beam is emitted from substrate and the substrate is associated not only can be the data that the irradiation position based on the electron beam on the brightness of the discharging amount of above-mentioned secondary electron and the substrate is associated, and can also be the data that the irradiation position with the electron beam on the aggregate-value of above-mentioned secondary electron number and the substrate is associated.
And then, in the present invention, the data inspection that is associated as the irradiation position that is used for according to the electron beam on the testing result of the secondary electron of will be by the irradiation of electron beam emitting from substrate and the substrate should become the device that has or not of the defective of insulation division as the position of conductive part, can be data or the mensuration figure M that is presented at display part 44, also can be that the operator carries out with visual according to data that are presented at above-mentioned display part 44 or mensuration figure M based on the inspection that has or not of the above-mentioned defective of above-mentioned data.
And then, for example as shown in figure 11, also can utilize the part of identical mensuration figure M to detect having or not of defect part.When in mensuration figure M for example, being formed with insulation division 51 and conductive part 52 with identical pattern by each beam zone b of unit, can make following program: for example 3 beam zone b0～b2 of unit more than 3 that comparative example such as front and back are provided with, confirm as defective 53 with the position different with other two unit beam zones.In addition, also can make following program: in identical mensuration figure M, will not exist the beam zone b0 of unit of the normal pattern of defective to grasp in advance, and detect having or not of defective by the regional b1 of the unit beam of audit by comparison object and this standard beam zone b0 as standard beam zone.In these cases, these programs are equivalent to be used for the device that has or not that data inspection that the irradiation position according to the electron beam on the testing result of the secondary electron of will be by the irradiation of electron beam emitting from substrate and the substrate is associated should become the defective of insulation division as the position of conductive part.In this embodiment, also can be by the operator according to mensuration figure having or not by the visual detection defective.
In addition, the data of the testing result of the secondary electron of emitting from substrate and the irradiation position correlativity of the electron beam on the substrate by the irradiation of electron beam be the count number of secondary electron, be provided with conductive part count number and will and as conductive part but the threshold value of distinguishing between the zone that obviously discharging amount of secondary electron is few, obtain " 1 ", " 0 " data according to whether exceeding this threshold value.In this case, because conductive part be " 1 ", insulation division and as conductive part but the few zone of discharging amount of obvious secondary electron is " 0 " so defective and defective peripheral region are " 0 ", and can be grasped defect area is become big mode.
In addition, adjustment based on the electric density of the electron beam of condenser lens 32, both can carry out with the focal position that the relative distance of electron beam transmitter unit 3 is adjusted condenser lens 32 by changing mounting table 22, can also be by carrying out with the adjustment combination of the relative distance of electron beam transmitter unit 3 to the adjustment and the mounting table 22 of the supplying electric current value of condenser lens 32.
In addition, the present invention is the structure that conductive part and insulation division mix, and no matter the defective that should become insulation division as the position of conductive part becomes the defective of electric insulation part or become the defective of insulation division physically, can both use the present invention.And, when detection should become the defective of insulation division as the position of conductive part, detect the situation that should become the defective of conductive part simultaneously and be also contained in the scope of technology of the present invention as the position of insulation division.
Claims (3)
1. a testing fixture is used to check the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in its skin section, it is characterized in that, comprising:
Vacuum tank, portion is provided with the mounting table of the described substrate of mounting within it;
To carrying out the vacuum exhaust unit of vacuum exhaust in the described vacuum tank;
Being used for the irradiation of the substrate on described mounting table electric density is 6.7 * 10
-3C/nm
2The electron beam illumination unit of following electron beam;
For the whole inspection subject area to described substrate is carried out electron beam scanning, and make the irradiation position of electron beam and the mobile unit that mounting table relatively moves;
The electronic detection unit that is used to detect by the irradiation of described electron beam the secondary electron of emitting from substrate;
Obtain the unit of obtaining of data that the irradiation position with the electron beam on the testing result of described electronic detection unit and the substrate is associated; And
Be used for whether having become the inspection unit that the defective of insulation division is checked as the position of conductive part according to described data correspondence.
2. testing fixture according to claim 1 is characterized in that:
Described electron beam illumination unit has the electron beam transmitter unit of divergent bundle and makes from the condenser lens of this electron beam transmitter unit ejected electron beam convergence on substrate,
The electric density of described electron beam is set by the focal position of adjusting described condenser lens.
3. an inspection method is used to check the substrate that is formed with the circuit pattern that comprises insulation division and conductive part in skin section, it is characterized in that, comprising:
On the mounting table of described substrate-placing in vacuum tank, and to carrying out the step of vacuum exhaust in the described vacuum tank;
To the irradiation of the substrate on described mounting table electric density is 6.7 * 10
-3C/nm
2The step of following electron beam;
For the whole inspection subject area to described substrate is carried out electron beam scanning, and make the irradiation position of electron beam and the step that mounting table relatively moves;
The step that the secondary electron of emitting by the irradiation of described electron beam is detected;
Obtain the step of the data that the irradiation position with the electron beam on the testing result of described secondary electron of emitting and the substrate is associated; And
Whether become the step that the defective of insulation division is checked according to described data check correspondence as the position of conductive part.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009227804A JP2011077331A (en) | 2009-09-30 | 2009-09-30 | Inspection device, and inspection method |
| JP2009-227804 | 2009-09-30 |
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| CN102033076A true CN102033076A (en) | 2011-04-27 |
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| CN2010102999750A Pending CN102033076A (en) | 2009-09-30 | 2010-09-30 | Inspection device and inspection method |
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|---|---|
| JP (1) | JP2011077331A (en) |
| KR (1) | KR20110035975A (en) |
| CN (1) | CN102033076A (en) |
| TW (1) | TW201131675A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002216698A (en) * | 2001-01-18 | 2002-08-02 | Toshiba Corp | Wafer defect inspection apparatus and device manufacturing method using the apparatus |
| JP2006332038A (en) * | 2005-04-28 | 2006-12-07 | Hitachi High-Technologies Corp | Inspection method and inspection apparatus using charged particle beam |
| US20070228276A1 (en) * | 2006-03-30 | 2007-10-04 | Hiroshi Makino | Inspection Apparatus and Inspection Method |
| US20080056559A1 (en) * | 1998-11-30 | 2008-03-06 | Takashi Hiroi | Pattern Inspection Method And Apparatus |
-
2009
- 2009-09-30 JP JP2009227804A patent/JP2011077331A/en active Pending
-
2010
- 2010-09-29 TW TW099133058A patent/TW201131675A/en unknown
- 2010-09-30 CN CN2010102999750A patent/CN102033076A/en active Pending
- 2010-09-30 KR KR1020100095025A patent/KR20110035975A/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080056559A1 (en) * | 1998-11-30 | 2008-03-06 | Takashi Hiroi | Pattern Inspection Method And Apparatus |
| JP2002216698A (en) * | 2001-01-18 | 2002-08-02 | Toshiba Corp | Wafer defect inspection apparatus and device manufacturing method using the apparatus |
| JP2006332038A (en) * | 2005-04-28 | 2006-12-07 | Hitachi High-Technologies Corp | Inspection method and inspection apparatus using charged particle beam |
| US20070228276A1 (en) * | 2006-03-30 | 2007-10-04 | Hiroshi Makino | Inspection Apparatus and Inspection Method |
Non-Patent Citations (1)
| Title |
|---|
| 《半导体学报》 20020430 冯仁剑等 低能电子束照射集成电路芯片时的静态电容衬度分析 428-433 1-3 第23卷, 第04期 2 * |
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| JP2011077331A (en) | 2011-04-14 |
| KR20110035975A (en) | 2011-04-06 |
| TW201131675A (en) | 2011-09-16 |
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Application publication date: 20110427 |