CN102005407B - Contact plug and forming method thereof - Google Patents
Contact plug and forming method thereof Download PDFInfo
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- CN102005407B CN102005407B CN2009101947900A CN200910194790A CN102005407B CN 102005407 B CN102005407 B CN 102005407B CN 2009101947900 A CN2009101947900 A CN 2009101947900A CN 200910194790 A CN200910194790 A CN 200910194790A CN 102005407 B CN102005407 B CN 102005407B
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Abstract
一种接触插塞及接触插塞的形成方法，其中接触插塞的形成方法包括：提供衬底，所述衬底表面形成有介质层，所述介质层内形成有接触孔；在所述接触孔底部、侧壁和介质层表面形成阻挡层；在所述阻挡层表面形成填充所述接触孔的金属层；去除部分金属层、形成在介质层表面的阻挡层、部分介质层和部分接触孔内的金属层，形成接触孔，所述接触孔侧壁的阻挡层高于接触孔内的金属层。本发明能够避免相邻的接触孔导通失效现象出现。
A contact plug and a method for forming the contact plug, wherein the method for forming the contact plug includes: providing a substrate, a dielectric layer is formed on the surface of the substrate, and a contact hole is formed in the dielectric layer; A barrier layer is formed on the bottom of the hole, side walls and the surface of the dielectric layer; a metal layer filling the contact hole is formed on the surface of the barrier layer; part of the metal layer, the barrier layer formed on the surface of the dielectric layer, part of the dielectric layer and part of the contact hole are removed The metal layer in the contact hole is formed, and the barrier layer on the side wall of the contact hole is higher than the metal layer in the contact hole. The invention can avoid the conduction failure phenomenon of adjacent contact holes.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly the formation method of contact plunger and contact plunger.
Background technology
Along with integrated circuit develops to very lagre scale integrated circuit (VLSIC), the current densities of IC interior is increasing, and the number of elements that is comprised is also more and more, and this development makes crystal column surface can't provide enough areas to make required interconnection line.
For the interconnection line demand after satisfying element and dwindling, the very large scale integration technology institute a kind of method of employing usually that is designed to of two-layer and two-layer above multiple layer metal interconnection line.At present; The conducting of different metal layer or metal level and laying realizes through the contact hole structure; The formation of contact hole structure comprises: between metal level and the metal level or the dielectric layer between metal level and the laying form an opening, in opening, insert electric conducting material., application number can find more formation scheme in being 200610030809.4 Chinese patent file about existing contact hole.
Simply introduce the forming process of contact hole structure below in conjunction with accompanying drawing.Fig. 1 to Fig. 5 is the sketch map of contact hole formation method in the prior art.
As shown in Figure 1, the certain thickness interlayer dielectric layer 11 of deposition on Semiconductor substrate 10, and utilize interlayer dielectric layer 11 that photoetching, lithographic technique remove corresponding contact hole place until exposing substrate surface, to form first groove 12 and second groove 13.
As shown in Figure 2, on the 11 surface deposition barrier layers 14 of the interlayer dielectric layer with first groove 12 and second groove 13;
As shown in Figure 3,14 surfaces, said barrier layer form the metal level 15 of filling first groove 12 and second groove 13;
As shown in Figure 4, remove the said metal level of part 15, part barrier layer 14 and part interlayer dielectric layer 11, form first contact hole 16 and second contact hole 17;
As shown in Figure 5, said interlayer dielectric layer 11, first contact hole 16 and second contact hole, 17 surfaces form cover layers 18.
Along with further developing of integrated circuit; The distance of first contact hole 16 and second contact hole 17 is further dwindled; In the contact hole that prior art forms; Metallic in first contact hole 16 and second contact hole 17 is easy to make win contact hole 16 and 17 conductings of second contact hole through the said cover layer 18 and first contact hole 16 or cover layer 18 and second contact hole, 17 interfacial diffusion, and entire device lost efficacy.
Summary of the invention
The technical problem that the present invention solves is to avoid the conducting of adjacent contact hole to cause component failure.
For addressing the above problem, the invention provides a kind of formation method of contact plunger, comprise the steps: to provide substrate, said substrate surface is formed with dielectric layer, is formed with contact hole in the said dielectric layer; Form the barrier layer on said contact hole bottom, sidewall and dielectric layer surface; Form the metal level of filling said contact hole at said barrier layer surface; Remove the part metals layer, be formed on the metal level in dielectric layer surperficial barrier layer, part dielectric layer and the part contact hole, form contact hole, the barrier layer of said contact hole sidewall is higher than the metal level in the contact hole.
Inventor of the present invention also provides a kind of contact plunger structure, comprising: substrate; Be formed on the dielectric layer of substrate surface; Contact hole, said contact hole is formed in the dielectric layer; Be formed on the barrier layer of contact hole sidewall and contact hole bottom; Fill the metal level of said contact hole; The barrier layer of said contact hole sidewall is higher than the metal level in the contact hole.
Compared with prior art; The present invention has the following advantages: through forming the barrier layer that is higher than the metal level in the contact hole at the contact hole sidewall; Make the barrier layer can effectively stop contact hole metal level metallic atom; Make metallic atom to avoid adjacent contact hole conducting failure phenomenon to occur through the interfacial diffusion of follow-up formation.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 to Fig. 5 is the sketch map of contact hole formation method in the prior art;
Fig. 6 is the formation method flow diagram of contact plunger provided by the invention;
Fig. 7 to Figure 12 is the sketch map of the formation method embodiment of the contact plunger that provides of the present invention.
Embodiment
Can know by background technology; The contact hole structure is widely used in integrated circuit, and inventor of the present invention finds along with integrated circuit further develops through a large amount of work; The contact hole quantity that is formed in the substrate increases thereupon; Distance between contact hole and the contact hole also reduces for it, and the metal of filling in the contact hole is easy to arrive adjacent contact hole through the tectal interfacial diffusion that covers the contact hole surface, causes adjacent contact hole conducting.
Inventor of the present invention is through further research; Find that ability that metallic copper has high-melting-point, low-resistance coefficient and a high anti-electron transfer is widely used in 130 nanometer nodes and is lower than in the semiconductor technology of 130 nanometer nodes technology; But because the metallic copper diffusivity is more outstanding; And along with integrated level further develops, the spacing between contact hole and the contact hole is further dwindled, and makes that the metallic copper in the contact hole diffuses to the adjacent contact hole more easily.
For this reason, inventor of the present invention provides a kind of formation method of contact plunger, comprises the steps:
Substrate is provided, and said substrate surface is formed with dielectric layer, is formed with contact hole in the said dielectric layer;
Form the barrier layer on said contact hole bottom, sidewall and dielectric layer surface;
Form the metal level of filling said contact hole at said barrier layer surface;
Remove the part metals layer, be formed on the metal level in dielectric layer surperficial barrier layer, part dielectric layer and the part contact hole, form contact hole, the barrier layer of said contact hole sidewall is higher than the metal level in the contact hole.
Inventor of the present invention also provides a kind of contact plunger structure, comprising: substrate; Be formed on the dielectric layer of substrate surface; Contact hole, said contact hole is formed in the dielectric layer; Be formed on the barrier layer of contact hole sidewall and contact hole bottom; Fill the metal level of said contact hole; The barrier layer of said contact hole sidewall is higher than the metal level in the contact hole.
The present invention provides a kind of formation method and a kind of contact plunger structure of contact plunger; Through forming the barrier layer that is higher than the metal level in the contact hole at the contact hole sidewall; Make the barrier layer can effectively stop contact hole metal level metallic atom; Make metallic atom to avoid adjacent contact hole conducting failure phenomenon to occur through the interfacial diffusion of follow-up formation.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 6 is the formation method flow diagram of contact plunger provided by the invention; Fig. 7 to Figure 12 is the sketch map of the formation method embodiment of the contact plunger that provides of the present invention.
As shown in Figure 6, the formation method of contact plunger provided by the invention comprises the steps:
Step S101 provides substrate, and said substrate surface is formed with dielectric layer, is formed with contact hole in the said dielectric layer.
Specifically, substrate 100 is provided with reference to figure 7.
Said substrate 100 can be substrate (part that comprises integrated circuit and other elements), the patterning of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate (SOI), epitaxial silicon substrate, section processes or the substrate that is not patterned.
With reference to figure 8, form dielectric layer 110 on said substrate 100 surfaces.
The thickness of said dielectric layer 110 is 20 nanometer to 5000 nanometers; Said dielectric layer 110 is used for lead on the substrate and the isolation between the lead; Concrete said dielectric layer 110 can be before-metal medium layer (Pre-Metal Dielectric; PMD), also can be interlayer dielectric layer (Inter-Metal Dielectric, ILD).
Before-metal medium layer is to be deposited on the substrate with MOS device; Utilize depositing operation to form; In before-metal medium layer, can form groove at subsequent technique, form connecting hole with metal filled groove, said connecting hole is used for connecting the electrode of MOS device and the plain conductor of upper layer interconnects layer.
Interlayer dielectric layer is the dielectric layer of postchannel process between metal interconnecting layer, can in subsequent technique, form groove in the interlayer dielectric layer, forms connecting hole with metal filled groove, and said connecting hole is used for connecting the lead of adjacent metal interconnects layer.
The material of said dielectric layer 110 is selected from SiO usually
2The SiO that perhaps mixes
2USG (Undoped Silicon Glass for example; The silex glass that does not have doping), BPSG (BorophosphosilicateGlass; The silex glass of boron phosphorus doped), BSG (Borosilicate Glass, the silex glass of doped with boron), PSG (Phosphosilitcate Glass, the silex glass of Doping Phosphorus) etc.
Said dielectric layer 110 generally selects for use the dielectric material of low-k, the material of said dielectric layer 100 specifically to be selected from the carborundum (BLOK) that silica (Black Diamond) that fluorine silex glass (FSG), carbon mix and nitrogen mix at 130 nanometers and following process node.
The formation technology of said dielectric layer 110 can be any conventional vacuum coating technology; For example atomic deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) or the like are not here done and are given unnecessary details.
With reference to figure 9, in said dielectric layer 110, form contact hole 111.
In said dielectric layer 110, forming contact hole 111 processing steps comprises: forming the photoresist figure corresponding with contact hole 111 on said dielectric layer 110 surfaces, is mask with said photoresist figure, the said dielectric layer 110 formation contact holes 111 of etching.
Comprise with contact hole 111 corresponding photoresist graphics arts in said dielectric layer 110 surface formation: at said dielectric layer 110 surperficial spin coating photoresists; Then through exposure with on the mask with the corresponding figure transfer of through hole to photoresist; Utilize developer solution that the photoresist of corresponding site is removed then, to form the photoresist figure.
Said etching dielectric layer 110 technologies can be any conventional lithographic technique, for example chemical etching or plasma etching technology.In the present embodiment, the using plasma lithographic technique adopts CF
4, CHF
3, CH
2F
2, CH
3F, C
4F
8Perhaps C
5F
8In one or several as reacting gas etching dielectric layer 110.
Concrete etching technics parameter can for: select the plasma-type etching apparatus for use, the etching apparatus chamber pressure is 10 millitorr to 50 millitorrs, and the top radio-frequency power is 200 watts to 500 watts, and the bottom radio-frequency power is 150 watts to 300 watts, C
4F
8Flow is per minute 10 standard cubic centimeters (10SCCM) to per minute 50 standard cubic centimeters; The CO flow is per minute 100 standard cubic centimeters to per minute 200 standard cubic centimeters; The Ar flow is per minute 300 standard cubic centimeters to per minute 600 standard cubic centimeters, O
2Flow is per minute 10 standard cubic centimeters to per minute 50 standard cubic centimeters, and etching dielectric layer 110 forms contact hole 111.
What need particularly point out is that said contact hole 111 is to be used to connect metal level and metal level or metal level and laying, and it can be that the contact hole 111 that exposes the metal level in the substrate 100 also can be the metal level that exposes in the dielectric layer that etching dielectric layer 110 forms contact holes 111.
With reference to Figure 10, S102 is said like step, in said contact hole 111 bottoms, sidewall and dielectric layer 110 surfaces form barrier layers 120.
Said barrier layer 120 materials are selected from tantalum nitride, titanium or titanium nitride; Said barrier layer 120 can be the structure of single layer structure or multilayer stack; Said barrier layer 120 is used to realize good adhesive force between the silica of metal material and dielectric layer sidewall of follow-up formation; Improve groove and formed quality, also be used to stop the metal level of follow-up formation and the pasc reaction of dielectric layer, reduced the resistance of groove.
The formation technology on said barrier layer 120 can be physical vapour deposition (PVD).If said barrier layer 120 is titanium and titanium nitride overlaying structure; Said formation technology can be for adopting deposited by pvd one deck titanium; (Metal Organic Chemical VaporDeposition, MOCVD) technology forms titanium nitride to adopt metal-organic chemical vapor deposition equipment then.
With reference to Figure 11, S103 is said like step, forms the metal level 130 of filling said contact hole 111 on 120 surfaces, said barrier layer.
Said metal level 130 materials are selected from aluminium, silver, chromium, molybdenum, nickel, palladium, platinum, titanium, tantalum or copper, perhaps are selected from the alloy of aluminium, silver, chromium, molybdenum, nickel, palladium, platinum, titanium, tantalum or copper, and said metal level 400 thickness are 2000 dust to 3000 dusts.
Said metal level 130 is realized the conducting of different metal layer or metal level and laying for being used to form the interlayer electrode.
Said metal level 130 forms technology and can be physical gas-phase deposition, chemical vapor deposition method or electroplating technology.
In the present embodiment; Because metallic copper has the ability of high-melting-point, low-resistance coefficient and high anti-electron transfer, preferably does exemplary illustrated with copper, what still need special instruction is; The metal level 130 of selecting for use other conductive materials to form is higher than in 130 nanometer technologies at process node still can work; Just transmission delay is bigger, specially explains at this, should too not limit protection scope of the present invention.
The formation metal layer material is that the technology of the metal level 130 of copper is electroplating technology, comprising: form seed copper layers on 120 surfaces, said barrier layer, said seed copper layer can adopt physical vapor deposition process to form, and does not here do and gives unnecessary details; Form copper metal layer 130 at said seed copper laminar surface.
The concrete parameter of electroplating technology that forms said copper metal layer 130 is: electroplate liquid is selected CuSO for use
4Solution, Cu
2+Concentration is 30g/L to 50g/L.And in this solution, add multiple inorganic and organic additive, inorganic additive is a chloride ion, and its concentration is 40mg/L to 60mg/L; Organic additive comprises accelerator, inhibitor and smooth dose, and its concentration is respectively 7ml/L to 10ml/L, 1ml/L to 3ml/L and 3mL/L to 6ml/L; The electric current of electroplating is 4.5 amperes to 45 amperes.
With reference to Figure 12; S104 is said like step; Remove part metals layer 130, be formed on the metal level 130 in barrier layer 120, part dielectric layer 110 and the part contact hole 111 on dielectric layer 110 surfaces; Form contact plunger 132, the barrier layer 120 of said contact hole 111 sidewalls is higher than the metal level 130 in the contact hole 111.
What need particularly point out is; Inventor of the present invention is in order to practice thrift processing step; Metal level 130 in said removal part metals layer 130, the barrier layer 120 that is formed on dielectric layer 110 surfaces, part dielectric layer 110 and the part contact hole 111; Form contact plunger 132; The barrier layer 120 of said contact hole 111 sidewalls is higher than the process using CMP process of the metal level 130 in the contact hole 111 accomplishes, and the height that the barrier layer 120 of said contact hole 111 sidewalls is higher than the metal level 130 in the contact hole 111 is 50 dust to 100 dusts.
Said processing step comprises: remove metal level 130 until exposing barrier layer 120; Removal is formed on the metal level 130 in barrier layer 120, part dielectric layer 110 and the part contact hole 111 on dielectric layer 110 surface, makes the barrier layer 120 of said contact hole 111 sidewalls be higher than the metal level 130 in the contact hole 111.
Said removal metal level 130 comprises until exposing barrier layer 120 technologies: corase grind is removed metal level 130 until keeping 500 dust to 1500 dust metal levels 130, and correct grinding is removed metal level 130 until exposing barrier layer 120.
Said corase grind is removed metal level 130 technological parameters: select for use aluminium oxide as polishing particles; The pH value of polishing fluid is 8 to 9; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 83 rpms to 93 rpms in the glossing, and the rotating speed of grinding head is 77 rpms to 87 rpms, and the pressure of glossing is 6500 handkerchief to 13000 handkerchiefs.
The technological parameter that correct grinding is removed metal level 130 is: select for use silica as polishing particles; The pH value of polishing fluid is 10 to 11.5; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 63 rpms to 73 rpms in the glossing, and the rotating speed of grinding head is 57 rpms to 67 rpms, and the pressure of glossing is 6500 handkerchief to 9700 handkerchiefs.
Said removal is formed on the metal level 130 in barrier layer 120, part dielectric layer 110 and the part contact hole 111 on dielectric layer 110 surface; Metal level 130 technological parameters that make the barrier layer 120 of said contact hole 111 sidewalls be higher than in the contact hole 111 are: select for use silica as polishing particles; The pH value of polishing fluid is 10 to 11.5; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 83 rpms to 103 rpms in the glossing, and the rotating speed of grinding head is 77 rpms to 97 rpms, and the pressure of glossing is 5500 handkerchief to 6500 handkerchiefs.
What need particularly point out is; Said removal is formed on the metal level 130 in barrier layer 120, part dielectric layer 110 and the part contact hole 111 on dielectric layer 110 surface; Metal level 130 technologies that make the barrier layer 120 of said contact hole 111 sidewalls be higher than in the contact hole 111 are selected the glossing slow to the removal on barrier layer 120 for use; In above-mentioned glossing; Through a large amount of experiment of inventor, obtained the rotating speed of the grinding pad in suitable polishing particles, polishing fluid and the glossing, the rotating speed of grinding head and the pressure of glossing, it is very fast to make dielectric layer 110 and the metal level that is positioned at contact hole 111 remove speed ratio; And the barrier layer removal is slow, and said glossing can make the barrier layer 120 of said contact hole 111 sidewalls be higher than the metal level 130 in the contact hole 111.
Contact plunger so that above-mentioned technology forms comprises: substrate 100; Be formed on the dielectric layer 110 on substrate 100 surfaces, contact hole 111, said contact hole 111 is formed in the dielectric layer 110; Be formed on the barrier layer 120 of contact hole 111 sidewalls and contact hole 111 bottoms; Fill the metal level 130 of said contact hole 111; The barrier layer 120 of said contact hole 111 sidewalls is higher than the metal level 130 in the contact hole 111.
The present invention is through forming the barrier layer that is higher than the metal level in the contact hole at the contact hole sidewall; Make the barrier layer can effectively stop contact hole metal level metallic atom; Make metallic atom to avoid adjacent contact hole conducting failure phenomenon to occur through the interfacial diffusion of follow-up formation.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (7)
1. the formation method of a contact plunger is characterized in that, comprising:
Substrate is provided, and said substrate surface is formed with dielectric layer, is formed with contact hole in the said dielectric layer;
Form the barrier layer on said contact hole bottom, sidewall and dielectric layer surface;
Form the metal level of filling said contact hole at said barrier layer surface;
Remove the part metals layer, be formed on the metal level in dielectric layer surperficial barrier layer, part dielectric layer and the part contact hole, form contact hole, the barrier layer of said contact hole sidewall is higher than the metal level in the contact hole; Said removal part metals layer, the technology that is formed on the metal level in barrier layer, part dielectric layer and the part contact hole on dielectric layer surface are CMP process; Said CMP process comprises: corase grind is removed metal level until keeping 500 dust to 1500 dust metal levels; Correct grinding is removed metal level until exposing the barrier layer; Removal is formed on the interior metal level of barrier layer, part dielectric layer and part contact hole on dielectric layer surface, makes the barrier layer of said contact hole sidewall be higher than the metal level in the contact hole; Said correct grinding is removed the metal level technological parameter: select for use silica as polishing particles; The pH value of polishing fluid is 10 to 11.5; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 63 rpms to 73 rpms in the glossing, and the rotating speed of grinding head is 57 rpms to 67 rpms, and the pressure of glossing is 6500 handkerchief to 9700 handkerchiefs.
2. the formation method of contact plunger as claimed in claim 1 is characterized in that, the barrier layer of said contact hole sidewall is higher than metal level 50 dust to 100 dusts in the contact hole.
3. the formation method of contact plunger as claimed in claim 1 is characterized in that, said barrier material is tantalum nitride, titanium or titanium nitride.
4. the formation method of contact plunger as claimed in claim 1 is characterized in that, said barrier layer is the structure of single layer structure or multilayer stack.
5. the formation method of contact plunger as claimed in claim 1 is characterized in that, said metal layer material is a copper.
6. the formation method of contact plunger as claimed in claim 1; It is characterized in that said corase grind is removed the metal level technological parameter and is: select for use aluminium oxide as polishing particles, the pH value of polishing fluid is 8 to 9; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 83 rpms to 93 rpms in the glossing, and the rotating speed of grinding head is 77 rpms to 87 rpms, and the pressure of glossing is 6500 handkerchief to 13000 handkerchiefs.
7. the formation method of contact plunger as claimed in claim 1; It is characterized in that; Said removal is formed on the metal level in barrier layer, part dielectric layer and the part contact hole on dielectric layer surface, and the technological parameter that makes the barrier layer of said contact hole sidewall be higher than the metal level in the contact hole is: select for use silica as polishing particles, the pH value of polishing fluid is 10 to 11.5; The flow of polishing fluid is 200 milliliters of per minute to 400 milliliter per minutes; The rotating speed of grinding pad is 83 rpms to 103 rpms in the glossing, and the rotating speed of grinding head is 77 rpms to 97 rpms, and the pressure of glossing is 5500 handkerchief to 6500 handkerchiefs.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101947900A CN102005407B (en) | 2009-08-28 | 2009-08-28 | Contact plug and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101947900A CN102005407B (en) | 2009-08-28 | 2009-08-28 | Contact plug and forming method thereof |
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| Publication Number | Publication Date |
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| CN102005407A CN102005407A (en) | 2011-04-06 |
| CN102005407B true CN102005407B (en) | 2012-12-19 |
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| CN107924868B (en) | 2015-08-12 | 2021-12-03 | 盛美半导体设备(上海)股份有限公司 | Method of fabricating interconnect structures to minimize barrier sidewall recess |
| KR102208545B1 (en) * | 2018-10-04 | 2021-01-28 | (주)알엔알랩 | Method for manufacturing semiconductor device |
| CN114695252A (en) * | 2022-02-28 | 2022-07-01 | 上海华力集成电路制造有限公司 | A method of forming a metal layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455447A (en) * | 2003-05-15 | 2003-11-12 | 上海集成电路研发中心有限公司 | Process flow of improved tungsten plug structure |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455447A (en) * | 2003-05-15 | 2003-11-12 | 上海集成电路研发中心有限公司 | Process flow of improved tungsten plug structure |
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