CN101924003B - Electrode structure and plasma device - Google Patents
Electrode structure and plasma device Download PDFInfo
- Publication number
- CN101924003B CN101924003B CN 200910086630 CN200910086630A CN101924003B CN 101924003 B CN101924003 B CN 101924003B CN 200910086630 CN200910086630 CN 200910086630 CN 200910086630 A CN200910086630 A CN 200910086630A CN 101924003 B CN101924003 B CN 101924003B
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- Prior art keywords
- graphite cake
- electrode structure
- frame
- flexible member
- structure according
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 43
- 239000010439 graphite Substances 0.000 claims abstract description 43
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000012634 fragment Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an electrode structure and a plasma device. The electrode structure is spliced by a plurality of graphite plates and is then placed in a frame; and an elastic element is arranged between the graphite plates and the frame. After being placed in the frame, the graphite plates are jacked and tightly clamped by the elastic element so as to avoid the formation of a gap among the graphite plates at high temperature or low temperature and ensure convenient removal and maintenance of the graphite plates. The invention can be applied to a technical cavity of a plasma enhancing chemical vapor deposition device.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, relate in particular to a kind of electrode structure and plasma apparatus.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) equipment is widely used in the semiconductor fabrication process, is used for the various films of deposition, silicon nitride film for example, transparent conductive film etc.In the solar cell making process, use plasma enhanced chemical vapor deposition equipment, especially the application in the manufacture craft of large tracts of land (area is above 0.25 square metre) crystal silicon solar energy battery is more extensive.
As shown in Figure 1, be the structural representation of PECVD equipment of the prior art.
Add radio frequency at processing chamber 1 internal upper part zero and form top electrode 4, support plate ground connection forms bottom electrode 3, and the bottom of bottom electrode 3 is provided with heating plate 2, is satisfying under the plasma formation condition, can form plasma between the upper and lower electrode.According to technological requirement, also can use low frequency or high voltage direct current, in order to guarantee normally carrying out of technology, electrode 4,3 must reliably contact with power end or earth terminal.
As shown in Figure 2, in the prior art one, with three graphite cake 5 direct splicing, be placed on then in the frame 6, frame 6 ground connection, graphite cake 5 leaves heat expansion trough 7 by frame 6 ground connection between graphite cake 5 and the frame 6.
The shortcoming of prior art one is: graphite cake 5 adds thermal expansion, causes that the contact slit becomes big between two graphite cakes 5, influences uniformity.
As shown in Figure 3, in the prior art two, use fixture 8 connecting in splicing place of graphite cake 5, the slit can not occur when guaranteeing heating, be placed on then in the frame 6.
The shortcoming of prior art two is: fixture need be taken apart when graphite cake cleans, be not easy to safeguard.
Summary of the invention
The purpose of this invention is to provide a kind of graphite cake that can guarantee and under the situation of high temperature or low temperature, the slit can not occur, make things convenient for electrode structure and the plasma apparatus of graphite cake demolition and maintenance again.
The objective of the invention is to be achieved through the following technical solutions:
Electrode structure of the present invention by being placed in the frame after the splicing of polylith graphite cake, is provided with flexible member between described graphite cake and the frame.
Plasma apparatus of the present invention comprises processing chamber, is provided with bottom electrode in the described processing chamber, and described bottom electrode comprises above-mentioned electrode structure.
As seen from the above technical solution provided by the invention, electrode structure of the present invention and plasma apparatus owing to be placed in the frame after the splicing of polylith graphite cake, are provided with flexible member between graphite cake and the frame.Under the effect of flexible member, can guarantee that graphite cake the slit can not occur under the situation of high temperature or low temperature, make things convenient for the graphite cake demolition and maintenance again.
Description of drawings
Fig. 1 is the structural representation of PECVD apparatus and process chamber in the prior art;
Fig. 2 is the structural representation of bottom electrode in the prior art scheme one;
Fig. 3 is the structural representation of bottom electrode in the prior art scheme two;
Fig. 4 is the structural representation of electrode structure of the present invention.
Embodiment
Electrode structure of the present invention, its preferable embodiment by being placed in the frame 6 after 5 splicings of polylith graphite cake, are provided with flexible member 9 between graphite cake 5 and the frame 6 as shown in Figure 4.Leave heat expansion trough 7 between graphite cake 5 and the frame 6, flexible member 9 can be located at the position of heat expansion trough 7.
Graphite cake 5 can be rectangle, is spliced into electrode structure by 2-4 piece graphite cake, as being spliced by 3 graphite cakes 5.Can be provided with 1-3 flexible member 9 between the long limit of graphite cake 5 and the frame 6, as be provided with 2 flexible members 9.
Can be respectively equipped with 1 flexible member 9 between the minor face of every graphite cake 5 and the frame 6.
Flexible member 9 can be high temperature spring or high temperature shell fragment, also can be other flexible member.
Plasma apparatus of the present invention, its preferable embodiment be, comprises processing chamber, is provided with bottom electrode in the processing chamber, and bottom electrode comprises above-mentioned electrode structure.
This plasma equipment can be plasma enhanced chemical vapor deposition equipment, also can be other plasma apparatus.
After among the present invention graphite cake being put into frame, graphite cake just can be withstood clamping by flexible member, has so both guaranteed that graphite cake the slit can not occur under the situation of high temperature or low temperature, convenient when having guaranteed the graphite cake demolition and maintenance again.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (7)
1. an electrode structure is placed in the frame by the splicing of polylith graphite cake afterwards, and this electrode structure is used for the bottom electrode of plasma apparatus processing chamber, it is characterized in that, is provided with flexible member between described graphite cake and the frame.
2. electrode structure according to claim 1 is characterized in that, described graphite cake is rectangle, is spliced by 2-4 piece graphite cake.
3. electrode structure according to claim 2 is characterized in that, by 3 described graphite cake splicings.
4. according to claim 2 or 3 described electrode structures, it is characterized in that, be provided with 1-3 flexible member between the long limit of described graphite cake and the described frame, be respectively equipped with 1 flexible member between the minor face of every graphite cake and the described frame.
5. electrode structure according to claim 4 is characterized in that, is provided with 2 flexible members between the long limit of described graphite cake and the described frame.
6. electrode structure according to claim 1 is characterized in that, described flexible member is high temperature spring or high temperature shell fragment.
7. electrode structure according to claim 1 is characterized in that, described plasma apparatus is plasma enhanced chemical vapor deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910086630 CN101924003B (en) | 2009-06-12 | 2009-06-12 | Electrode structure and plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910086630 CN101924003B (en) | 2009-06-12 | 2009-06-12 | Electrode structure and plasma device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101924003A CN101924003A (en) | 2010-12-22 |
| CN101924003B true CN101924003B (en) | 2013-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910086630 Active CN101924003B (en) | 2009-06-12 | 2009-06-12 | Electrode structure and plasma device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101924003B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361636B (en) * | 2013-08-06 | 2015-04-29 | 河北大学 | Plasma vapor deposition material two-sided locally-growing device and method |
| CN207743194U (en) * | 2018-01-03 | 2018-08-17 | 惠科股份有限公司 | Ceramic structure, lower electrode and dry etching machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040059A (en) * | 2004-10-13 | 2007-09-19 | 兰姆研究公司 | Heat transfer system for improved semiconductor processing uniformity |
| CN101198207A (en) * | 2006-12-08 | 2008-06-11 | Tes股份有限公司 | Plasma processing apparatus |
| CN100399516C (en) * | 2002-10-31 | 2008-07-02 | 兰姆研究公司 | Method for etching medium material |
| CN101267708A (en) * | 2007-02-09 | 2008-09-17 | 三星电子株式会社 | Plasma processing apparatus and plasma processing method |
| CN101352108A (en) * | 2005-12-28 | 2009-01-21 | 夏普株式会社 | Table apparatus and plasma processing apparatus |
-
2009
- 2009-06-12 CN CN 200910086630 patent/CN101924003B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100399516C (en) * | 2002-10-31 | 2008-07-02 | 兰姆研究公司 | Method for etching medium material |
| CN101040059A (en) * | 2004-10-13 | 2007-09-19 | 兰姆研究公司 | Heat transfer system for improved semiconductor processing uniformity |
| CN101352108A (en) * | 2005-12-28 | 2009-01-21 | 夏普株式会社 | Table apparatus and plasma processing apparatus |
| CN101198207A (en) * | 2006-12-08 | 2008-06-11 | Tes股份有限公司 | Plasma processing apparatus |
| CN101267708A (en) * | 2007-02-09 | 2008-09-17 | 三星电子株式会社 | Plasma processing apparatus and plasma processing method |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2004-311581A 2004.11.04 |
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| Publication number | Publication date |
|---|---|
| CN101924003A (en) | 2010-12-22 |
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| C14 | Grant of patent or utility model | ||
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| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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