CN101903970A - Dual Plasma Ion Source - Google Patents

Abstract

An ion source (100) includes a first plasma chamber (102) and a second plasma chamber (116). The first plasma chamber (102) comprising a plasma generating component (104) and a first gas inlet (122) for receiving a first gas such that the plasma generating component (104) interacts with the first gas to generate a first plasma in the first plasma chamber (102), wherein the first plasma chamber (102) further defines an aperture (114) for extracting electrons from the first plasma; the second plasma chamber (116) comprises a second gas inlet (118) for receiving a second gas, wherein the second plasma chamber (116) further defines an aperture (117) for receiving electrons extracted therefrom substantially aligned with the aperture (112) of the first plasma chamber (102) for interacting electrons with the second gas to generate a second plasma in the second plasma chamber (116), and the second plasma chamber (116) further defines an extraction aperture (120) for extracting ions from the second plasma.

Description

Dual Plasma Ion Source

technical field

The present invention relates generally to ion implantation systems, and more particularly to systems and methods for ion implantation using dual plasma ion sources.

Background technique

In the manufacture of semiconductor devices and further products, ion implantation systems are used to implant dopant elements into semiconductor workpieces, display panels and glass substrates, etc. To create n-type and/or p-type doped regions, or to form a passivation layer in a workpiece, a typical ion implantation system or ion implanter implants an ion beam of impurities into the workpiece. When used to dope semiconductors, ion implantation systems inject ion species into the workpiece that have been selected to produce desired extrinsic material properties. Typically, dopant atoms or molecules are ionized and isolated, accelerated and/or decelerated, beamed, and implanted into the workpiece. The dopant ions physically impinge on and enter the surface of the workpiece, and typically lodge beneath the surface of the workpiece and in its crystalline lattice structure.

A typical ion implantation system is usually a complex collection of subsystems, where each subsystem performs a specific action on the dopant ions. The dopant elements can be introduced in gaseous form (eg process gas) or in solid form (which is subsequently evaporated), wherein said dopant elements are arranged inside the ionization chamber and ionized by a suitable ionization process. During the past decade, so-called "Bemas-style" ion sources have gained wide acceptance as the industry standard for high and medium current ion implantation systems. For example, an ionization chamber is maintained at a low pressure (eg, vacuum) with eg a wire within the ionization chamber and heated to a point at which electrons are emitted from the wire. Negatively charged electrons from the filament are then attracted to an oppositely charged anode within the cavity, where during travel from the filament to the anode, the electrons collide with dopant source elements such as molecules or atoms , which causes electrons to separate from the source gas material, thereby ionizing the source gas and creating a plasma, ie, a plurality of positively charged ions and negatively charged electrons from the dopant source element. Positively charged ions are then "extracted" from the chamber via extraction electrodes through extraction slots or holes, where the ions are generally directed along the ion beam path toward the workpiece.

Heated filament cathodes of the type described above typically degrade rapidly over time. Therefore, a common variant of this type of ion source has been developed and deployed in commercial ion implantation systems, which employ an indirectly heated cathode (IHC) where the electron emitter is placed in the ionization chamber The inner cylindrical cathode is usually 10mm in diameter and 5mm thick. The cathode is heated by an electron beam drawn from a wire located behind the cathode, thus being protected from the harsh environment of the ionization chamber. An exemplary IHC ion source is shown in other patents, such as commonly assigned US Patent No. 5,497,006 to the applicant of the present invention.

In the case of filament cathodes, the power of the cathode heater is typically on the order of a few hundred watts, while in the case of IHC the power is typically on the order of a kilowatt. Typical maximum extracted ion beam currents are in the range of 50 to 100 mA when operating with standard implant gases such as boron trifluoride (BF ₃ ), phosphine (PH ₃ ), and arsine (AsH ₃ ). In the range, hundreds of watts of discharge power (cathode voltage multiplied by cathode current) is required. With these cathode heater powers and discharge powers, the walls of the ion source typically reach temperatures in excess of 400 degrees Celsius. For standard gas operation, these high wall temperatures are advantageous because condensation of phosphorus and arsenic on the walls is prevented, thereby greatly reducing cross-contamination when changing species.

Substantial improvements in throughput have been demonstrated for low energy boron implantation, for example, using large single charged ions such as decaborane (B ₁₀ H ₁₄ ) or octadecaborane (B ₁₈ H ₂₂ )). To prevent molecular breakdown, the discharge power and plasma density of such macromolecular plasmas must be kept at lower levels compared to standard injection gases. Usually, the extracted ion current is 5 to 10mA, and only tens of watts of discharge power is required. While the above-mentioned standard sources can run stably at these low powers using standard injection gases, problems are encountered when running decaborane or octadecaborane. In the case of a Bernas source where the wire is in contact with the gas, the wire is attacked by borane and cannot maintain a stable discharge. In the case of IHC, the discharge is more stable, but the thermal decomposition of macromolecules is unacceptably high. Due to the high radiant power of the cathode, the decomposition takes place simultaneously on the hot cathode and the walls, which are difficult to keep at a low temperature.

The above-mentioned problems encountered when operating with gases such as decaborane and octadecaborane can be overcome by removing the source of electrons from the ionization chamber. One such solution is described in US Patent No. 6,686,595, where a conventional broad beam electron gun is mounted outside the ionization chamber and the electron beam is directed into the ionization chamber through an aperture. However, in such a source configuration, the electron current injected into the ionization chamber is limited to a few tens of milliamperes due to fundamental limitations of electron gun design. Since operation with standard implant gases at standard ion beam currents of 50 to 100 mA requires electron currents of hundreds of milliamperes to several amperes, such an ion source configuration is not suitable for such operation. Indeed, manufacturers of ion implantation systems are well aware of such problems, at least for example in one approach described in U.S. Patent No. 7,022,999, in which it has been proposed to configure the ionization chamber into two separate modes of operation: a mode One mode for low electron current ionization applications; and one mode for high electron current ionization applications. Alternatively, an ion source configuration has been proposed in U.S. Patent Application Publication No. US2006/0169915, wherein a first electron source and a second electron source are located at opposite ends of the arc chamber, wherein each electron source is activated in one of the so-called "hot" and "cold" operating modes.

Therefore, in order to meet the more demands of the ion implantation industry, for the operation at low source wall temperature and low discharge power for macromolecular gases (so-called "molecular species") and for standard implant gases (so-called "monomeric species") ) There is a need for an ion source that operates at high wall temperature and high discharge power.

Contents of the invention

The present invention overcomes the limitations of the prior art by providing a two-plasma or dual-plasma ion source system and method that can utilize macromolecules (such as decaborane and octadecaborane) and materials such as Ion source for standard implant gases of BF ₃ , PH ₃ and AsH ₃ . Therefore, the following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an exhaustive overview of the invention. It is intended to identify key or critical elements of the invention or to delineate the scope of the invention. Its purpose is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later. The present invention relates generally to an ion source for use in an ion implantation system, wherein the ion source comprises two or more plasma chambers such that a first plasma chamber is operable to generate an ion source for implantation into a second plasma chamber electrons so that the second plasma chamber can efficiently and effectively generate ions for implantation into the ion beam of the ion implantation system.

According to an exemplary aspect of the present invention, there is provided an ion source comprising: a first plasma chamber (hereinafter referred to as an electron source plasma chamber) comprising a chamber for generating plasma from ionization of a first source gas; and a second plasma chamber (hereinafter referred to as an ion source plasma chamber) into which electrons from the electron source plasma chamber are injected, thereby generating plasma from a second source gas. The ion source may include a high voltage extraction system including an electrode system configured to extract ions from the ion source plasma chamber through an extraction aperture formed therein.

According to another exemplary aspect of the present invention, there is provided a method for generating ions, the method comprising: forming an electron source plasma in a first plasma chamber; extracting electrons in the plasma; so as to guide the extracted electrons into the second plasma chamber, whereby the extracted electrons generate plasma in the second plasma chamber; and passing through the extraction holes arranged in the second plasma chamber extract ions.

According to yet another aspect of the present invention, there is provided an ion implantation system comprising an ion source for injecting ions into an ion beam for implantation into a workpiece, the ion source comprising: A first plasma chamber (electron source plasma chamber) that generates plasma in the ionization of A plasma is generated from a second source gas. The ion implantation system includes an extraction system including an electrode configured to extract ions from the ion source plasma chamber through an extraction aperture formed therein.

To the accomplishment of the foregoing and related ends, the invention comprises the features hereinafter fully described and particularly pointed out in the claims. The following description and drawings set forth in detail certain illustrative embodiments of the invention. These embodiments are representative, however, of a few of the many ways in which the principles of the invention may be employed. Other objects, advantages and novel features of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanying drawings.

Description of drawings

Figure 1 shows an isometric perspective view of an exemplary ion source according to one aspect of the present invention;

Figure 2 shows a cross-sectional perspective view of an exemplary ion source according to an aspect of the present invention;

3 illustrates a block diagram of an exemplary method for generating and extracting ions from an ion source according to another exemplary aspect of the invention; and

4 is a schematic diagram of an exemplary ion implantation system utilizing an exemplary ion source according to another aspect of the invention.

Detailed ways

The present invention generally relates to improved ion source apparatus for use in ion implantation. More specifically, the systems and methods of the present invention provide an efficient way to ionize macromolecular ionized gases to produce molecular ion-implanted species such as carborane, decaborane, octadecaborane, and eicosaborane alkanes (icosaboranes), and ionized standard ionized gases used to ionize monomeric ion-implanted species (such as boron trifluoride, phosphine, and arsine). It should be understood that the above list of ion-implanted species is provided for illustration only purpose, and should not be considered to represent a complete list of ionized gases that can be used to produce ion implanted species. Accordingly, the present invention will now be described with reference to the accompanying drawings, wherein like reference numerals are used throughout to represent like elements. It should be understood that descriptions of these aspects It is only illustrative, and should not be interpreted as having any limiting meaning.In the following description, for the purpose of illustration, many specific details are set forth in order to provide a comprehensive understanding of the present invention.However, for those skilled in the art It will be understood, however, that the invention may be practiced without these specific details.

Referring now to FIGS. 1 and 2 , there is shown a simplified exemplary ion source 100 according to the present invention, wherein ion source 100 is suitable for practicing one or more aspects of the present invention. It should be noted that the ion source 100 depicted in FIG. 1 is provided for illustrative purposes only, and is not intended to include all aspects, components, and features of the ion source. Rather, an exemplary ion source 100 is depicted to facilitate a further understanding of the present invention.

For example, ion source 100 includes first plasma chamber 102 disposed adjacent to second plasma chamber 116 . The first plasma chamber 102 includes a gas source supply line 106 and is configured with a plasma generating means 104 for generating plasma from a first source gas. A source gas is introduced into the first plasma chamber 102 by a gas supply line 106 . The source gas may include at least one of: an inert gas such as argon (Ar) and xenon (Xe); such as boron trifluoride (BF ₃ ), arsine (AsH ₃ ), and phosphine (PH ₃ ) standard ion implantation gases; and reactive gases such as oxygen (O ₂ ) and nitrogen trifluoride (NF ₃ ). It should also be understood that the above list of source gases is provided for illustrative purposes only and should not be considered to represent a complete list of source gases that may be delivered to the first plasma chamber.

The plasma generating component 104 may include a cathode 108/anode 110 combination, where the cathode 108 may include a simple Bernas-type wire configuration, or an indirectly heated cathode of the type shown in FIGS. 1 and 2 . Alternatively, the plasma generation component 104 may comprise an RF (radio frequency) induction coil antenna supported and having a radio frequency guide section mounted directly within the gas confinement chamber to deliver ionization energy to the gas ionization region, for example as in the Disclosed in commonly assigned US Patent No. 5,661,308 to the applicant of the present invention.

The first or electron source plasma chamber 102 defines an aperture 112 that provides access into the high vacuum region of the ion implantation system, ie a region at a much lower pressure than the source gas in the first plasma chamber 102 . Holes 112 provide suction holes for maintaining source gas purity at a high level, as will be discussed further below.

The electron source plasma chamber 102 also defines an aperture 114 that forms an extraction aperture for extracting electrons from the electron source plasma chamber 102 . In a preferred embodiment, as shown in FIG. 2 , the lead-out hole 114 is provided in the form of a replaceable anode element 110 in which the hole 114 is formed. Likewise, those skilled in the art will recognize that the electron source plasma chamber 102 can be configured to have the electrode 119 forward biased (with respect to the cathode 108) for operating in a so-called non-reflex mode Attracts electrons from the plasma. Alternatively, electrode 119 may be negatively biased relative to cathode 108 to cause electrons to be ejected back into electron source plasma chamber 102 in a so-called reflex mode. It should be understood that such a fold-back mode configuration would require proper biasing of the plasma chamber walls, as well as electrically isolated and independent biasing of the electrodes 119 .

As previously mentioned, the ion source 100 of the present invention also includes a second or ion source chamber 116 . The second ion source plasma chamber 116 includes a second gas source supply line 118 for introducing ion source gas into the ion source plasma chamber 116, and is further configured to receive electrons from the electron source plasma chamber 102, thereby passing the electrons to the first ion source plasma chamber 116. Collisions between the two source gases generate a plasma therein. The second source gas can include any of the gases listed above for the electron source plasma chamber 102, or any macromolecular gas (e.g., carborane (C ₂ B ₁₀ H ₁₂ ), decaborane (B ₁₀ H ₁₄ ), and octadecaborane (B ₁₈ H ₂₂ ) or eicosaborane). It should also be understood that the above list of source gases is provided for illustrative purposes only and should not be considered to represent a complete list of source gases that may be delivered to the second plasma chamber 116 .

The second or ion source plasma chamber 116 defines an aperture 117 aligned with the extraction aperture 114 of the first plasma chamber 102 to form a pathway therebetween for allowing electrons extracted from the first plasma chamber 102 to flow into the first plasma chamber 102. Two plasma chambers 116 . Preferably, the ion source plasma chamber 116 is configured with a forward biased electrode 119 for attracting electrons injected into the ion source plasma chamber 116 in a so-called non-retracing mode to create a gap between the electrons and the gas molecules. Desired collisions to generate ionized plasma. Alternatively, the electrode 119 may be negatively biased so that electrons are ejected back into the ion source plasma chamber 116 in a so-called reflex mode.

An extraction hole 120 is disposed in the second plasma chamber 116 to extract ions to form an ion beam for implantation in a conventional manner.

It is important to note that the second plasma chamber 116 is preferably forward biased relative to the first plasma chamber 102 using an external bias power supply 115 . Electrons are thus extracted from the electron source plasma chamber 102 and injected into the ion source plasma chamber 116 to generate plasma; The wire 118 is supplied to the second plasma chamber 116 by causing collisions between supply gases.

It should be noted that the first plasma chamber 102 and the second plasma chamber 116 may have three open boundaries: gas inlets (e.g., first gas supply inlet 122 and second gas supply inlet 124), openings to the high vacuum region (eg, suction hole 112 and extraction hole 120 ) and common boundary holes 114 and 117 , which form a common passage between the first and second plasma chambers 102 and 104 , respectively. Preferably, the area of the common boundary holes 114 and 117 remains the same as that of the holes 112 and 120 entering the high vacuum region (i.e., the first plasma chamber hole 112 and the second plasma chamber hole 120), for reasons that will be discussed below. very small.

In one exemplary ion source configuration according to the invention, ion sources of the invention include those of the type described and sold by Axcelis Technologies, Inc. of Beverly, MA. Components of a standard IHC ion source, wherein the ion source plasma chamber includes a standard arc chamber configured with a standard anode, an extraction system, and a source supply tube. The internally heated cathode element of the standard IHC source was removed and replaced in its place by a small electron source plasma chamber containing a standard IHC ion source of the type described and manufactured and sold by Axcelis Technologies. components including the arc chamber, standard internally heated cathode elements and source supply tubes.

The two plasma chambers also share a magnetic field oriented along the extraction aperture, provided by a standard Axcelis source magnet, indicated by reference numeral 130 . It is well known that the ionization process (and in this case the electron generation process) is made more efficient by inducing a vertical magnetic field in the plasma generation chamber. Likewise, in a preferred embodiment, the electromagnetic member 130 is disposed outside the first and second plasma chambers 102 and 116, preferably along the axis of the shared boundary between the first and second plasma chambers 102 and 116, respectively. . The electromagnetic element 130 induces a magnetic field that traps electrons to increase the efficiency of the ionization process.

The electron source chamber 102 is also preferably thermally insulated from the ion source plasma chamber 116 by an insulating member 126 disposed therebetween, the only power coupled to the ion source plasma chamber 116 being a small amount of radiant power, which is The radiant power is typically on the order of 10 W, provided by the cathode 108 through the common boundary aperture formed by the apertures 114, 117, the discharge power associated with the electron current injected into the ion source plasma chamber 166, for decaborane or Usually 10W for octadecaborane discharge. The low amount of power coupled to the ion source plasma chamber 116 facilitates keeping the wall temperature low enough to prevent decomposition of macromolecular gases. The electron source chamber 102 is electrically insulated from the ion source plasma chamber 116 by an insulating member 126 .

In a preferred embodiment, the ion source plasma chamber 116 is configured with an extraction aperture 120 having an area of approximately ^300mm2 (5mm x 60mm). The electron source chamber 102 is also configured with a suction hole 112 with a total area of 300 mm ² . The common boundary aperture formed by the apertures 114 and 117 common to both plasma chambers preferably has an area on the order of 30 mm ² (4×7.5 mm). In this configuration, when operating with a source of argon gas coupled to the electron source plasma chamber 102 and a source of decaborane or octadecaborane gas coupled to the ion source plasma chamber 116, it is easy to pass through the extraction hole 120. An extracted ion beam current of approximately 5 mA was obtained. Under these conditions, an argon discharge current and voltage (typically on the order of 0.2A @ 40v) in the electron source chamber 102 produces an electron current of 0.1A (and a bias voltage of 0.1A) injected into the ion source plasma chamber 116 The voltage on the power supply device 115 is set to 100V). In the same physical configuration, when switching to phosphine as the gas source in the ion source plasma chamber 116, increasing the electron source plasma discharge parameters to 5A@60V makes the electron current injected into the ion source plasma in a partial When the voltage supply device is set to 120V, it increases to 3A, wherein the ion beam current exceeding 50mA is extracted through the extraction hole 120 .

As previously indicated, the area of the electron source plasma chamber pump hole 112 and the ion source plasma chamber pump hole 120 is preferably chosen to be large in area compared to the common boundary hole created by holes 114 and 117, which This results in relatively high gas purity in each chamber 102 and 116 . Referring to the above example, argon gas flows into the ion source plasma cavity 116 through the common extraction hole 114 of 30 mm ² and flows out through the extraction hole 120 of 300 mm ² . As a result, the argon density in the ion source plasma chamber 116 is only 10% of the argon density in the electron source plasma chamber 102 . By the same reasoning, the density of the second gas (which may flow into the electron source plasma chamber 102) supplied to the ion source plasma chamber 116 via the gas supply line 118 is only 10% of the density of the second gas in the ion source plasma chamber 116 . In a typical application, the argon gas density in the electron source plasma chamber 102 is approximately equal to the second gas density in the ion source plasma chamber 116 such that each plasma chamber gas has a purity of 90%.

Due to the foregoing ion source hardware configuration, the inventors of the present invention realized that molecular ion species such as decaborane (B ₁₀ H ₁₄ ) or octadecaborane were formed in the second plasma chamber 116 using electrons from the first plasma chamber 102 (B ₁₈ H ₁₂ ) ions), for example, can avoid typical ion source contamination problems associated with cathodes, while the power consumption properties of such hardware can enable a wide range of electron current ionizations typically associated with ionization of molecular species applications as well as high electron current ionization applications typically associated with ionization of monomeric species.

As shown in FIG. 3, the method 200 according to the present invention begins at step 202, which supplies a first gas to the first plasma chamber 102 (see FIG. A gas source supply line 118 supplies the second gas to the second plasma chamber 116 (see FIG. 1 ), which is also under vacuum. For example, ion source 100 (FIG. 1) includes a first plasma chamber 102 containing a first gas and configured with a plasma generating component 104 (FIG. 1) for generating a plasma from the first gas.

At step 204, the plasma generating component 104 (see FIG. 1 ) is energized to pass the interaction of the plasma generating component 104 and the first source gas (eg, argon) in the first plasma chamber 102 (see FIG. 1 ). Plasma is generated. For example, plasma can be generated by a DC discharge with a discharge current of 0.4 mA and a discharge voltage of 60 volts. In step 206, electrons are extracted from the plasma generated in the first plasma chamber 102 (see FIG. 1 ) and passed through holes 114 and 117 formed in the first and second plasma chambers 102 and 116, respectively. The resulting common boundary region is injected into the second plasma chamber 116 (see FIG. 1 ), allowing fluid communication (eg, fluids including electrons, ions, and plasma) between them. In step 208, the second gas in the second plasma chamber 116 supplied through the gas line 118 is struck by electrons extracted from the first plasma chamber 102 (see FIG. 1) to form a second plasma. Finally, at step 210 ions are extracted from the plasma in the second plasma chamber 116 (see FIG. 1 ) through the extraction aperture 120 ( FIG. 1 ).

Accordingly, the present invention describes a "dual plasma ion source". It should be understood that such a dual plasma ion source as described may be incorporated into an ion implantation system as shown in the exemplary ion implantation system 300 of FIG. 4 for use. Ion implantation apparatus 300 (also referred to as an ion implanter) is operatively coupled to a controller 302 for controlling various operations and processes performed on ion implantation apparatus 300 . In accordance with the present invention, ion implantation apparatus 300 includes a dual plasma ion source assembly 306 as described above for generating a quantity of ions for generating an ion beam 308 traveling along an ion beam path P, to implant ions into a workpiece 310 (eg, a semiconductor workpiece, a display panel, etc.) held on a workpiece support platform 312 . The ions can be implanted with inert gases such as argon (Ar) and xenon (Xe); standard ion implantation gases such as boron trifluoride (BF ₃ ), arsine (AsH ₃ ) and phosphine (PH ₃ ) ; reactive gases such as oxygen (O ₂ ) and nitrogen trifluoride (NF ₃ ); and macromolecular gas formation such as decaborane (B ₁₀ H ₁₄ ) and octadecaborane (B ₁₈ H ₂₂ ).

The ion source assembly 306 includes a first plasma chamber 314 (eg, a plasma chamber or an arc chamber) and a second plasma chamber 316, wherein the first plasma chamber 314 is configured with a plasma generating component 318, which may include a cathode 108 (see FIG. 2 ) and anode 110 (see FIG. 2 ), for generating plasma from the first gas introduced into the first plasma chamber 314 through the first gas supply line 322 of the first gas supply device 301 . For example, plasma generation component 318 may alternatively include a radio frequency (RF) induction coil. The first gas may include at least one of: an inert gas such as argon (Ar) and xenon (Xe); such as boron trifluoride (BF ₃ ), arsine (AsH ₃ ), and phosphine ( PH ₃ ); and reactive gases such as oxygen (O ₂ ) and nitrogen trifluoride (NF ₃ ).

The second plasma chamber 316 is disposed in fluid communication with the first plasma chamber 314 through a common boundary hole 326 formed between the first and second plasma chambers 314 and 316, wherein the second plasma chamber 316 contains The device 320 introduces a second gas through a second gas supply line 328 . The second gas may include at least one of: an inert gas such as argon (Ar) and xenon (Xe); such as boron trifluoride (BF ₃ ), arsine (AsH ₃ ), and phosphine ( PH ₃ ); reactive gases such as oxygen (O ₂ ) and nitrogen trifluoride (NF ₃ ); and decaborane (B ₁₀ H ₁₄ ) and octadecaborane (B ₁₈ H ₂₂ ) macromolecular gases.

The second plasma chamber 316 is preferably forward biased relative to the first plasma chamber 314 by a bias power supply 332 to enable extraction of electrons from the first plasma chamber 314 for injection into the second plasma chamber 316 . When the extracted electrons collide with the second gas in the second plasma chamber 316 , they generate a plasma in the second plasma chamber 316 . Extraction holes 334 are provided in the second plasma chamber 316 to extract ions from plasma formed in the second plasma chamber 316 .

The ion implantation system 300 also includes an extraction electrode assembly 331 associated with the source assembly 306, wherein the extraction electrode assembly 331 is biased to attract charged ions from the source assembly 306 for extraction through the extraction aperture. A beam assembly 336 is also disposed downstream of the ion source assembly 306 , where the beam assembly 336 generally receives charged ions from the source 306 . For example, beam assembly 336 includes beam guide 342, mass analysis device 338, and resolving aperture 340, wherein beam assembly 336 is operable to transport ions along ion beam path P for implantation into workpiece 310.

For example, mass analysis device 338 also includes field generating components (such as magnets not shown), wherein mass analysis device 338 typically provides a magnetic field across ion beam 308 such that the charge-to-mass ratio associated with ions extracted from source 306 varies at The trajectory deflects the ions from the ion beam 308 . For example, ions traveling through a magnetic field experience a force that directs individual ions with a desired charge-to-mass ratio along the beam path P and deflects ions with an undesired charge-to-mass ratio away from the beam path P. If passed through mass analysis device 338, ion beam 308 is directed through resolving aperture 340, where ion beam 308 may be accelerated, decelerated, focused, or otherwise modified for implantation into workpiece 310 disposed within end station 344 .

While the invention has been described with respect to certain preferred embodiments, it is obvious that equivalent substitutions and modifications will occur and occur to those skilled in the art after reading and understanding the specification and drawings of the invention. In particular, with respect to the various functions performed by the components (components, means, circuits, etc.) described above, unless otherwise indicated, terms used to describe these components (including references to "means") are to correspond to Any component that performs the specified function of the component (ie, functionally equivalent), even if not structurally equivalent to the disclosed structure that performs the function in the exemplary embodiments of the invention shown herein. Furthermore, while specific features of the invention have been disclosed with respect to only one of several embodiments, such features may be combined with one or more other embodiments of other embodiments, as may be desirable and advantageous for any particular application. feature combination.

Claims (25)

1. ion source, described ion source comprises:

First plasma chamber, described first plasma chamber comprises the plasma generation parts and is used to receive first air inlet of first gas, so that described plasma generation parts and described first gas interact to produce first plasma in described first plasma chamber, wherein said first plasma chamber also defines the hole that is used for drawing from described first plasma electronics; With

Second plasma chamber, described second plasma chamber comprises second air inlet that is used to receive second gas, wherein said second plasma chamber also define aim at the hole of described first plasma chamber in fact be used to receive hole from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber, described second plasma chamber also defines the fairlead that is used for drawing from described second plasma ion.

2. ion source according to claim 1, wherein said first plasma chamber also defines the SS that is used to form the path that enters high vacuum region, the area size of wherein said SS greater than be used for from the relevant area size in hole that described first plasma is drawn electronics.

3. ion source according to claim 1, wherein said plasma generation parts comprise negative electrode and anode.

4. ion source according to claim 1, wherein said plasma generation parts comprise radio-frequency antenna.

5. ion source according to claim 1, also comprise the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber and second plasma chamber, to realize that described derivative electronics is transported to described second plasma chamber from described first plasma chamber.

6. ion source according to claim 1, wherein said first gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases.

7. ion source according to claim 1, wherein said second gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases; Or decaborane (B for example ₁₀H ₁₄) or 18 borine (B ₁₈H ₂₂) big molecular gas.

8. ion source according to claim 1 also comprises the extraction electrode assembly relevant with described fairlead, and wherein said extraction electrode assembly is exercisable to draw ion from described ion source, is generally used for forming ion beam.

9. method that is used for producing ion at ion source, described method comprises step:

In first plasma chamber, produce first plasma;

By the hole that is limited by described first plasma chamber, draw electronics from described first plasma;

Described derivative electronic guide in described second plasma chamber, is used for producing second plasma at described second plasma chamber; With

By the fairlead that is limited by described second plasma chamber, draw ion from described second plasma.

10. method according to claim 9, wherein said step of drawing electronics are subjected to the effect of the voltage difference between described first plasma chamber and described second plasma chamber.

11. an ion implant systems that comprises ion source (100), described ion implant systems comprises:

First plasma chamber (102), described first plasma chamber (102) comprises plasma generation parts (104) and is used to receive first air inlet (122) of first gas, so that described plasma generation parts (104) interact with described first gas, to produce first plasma in described first plasma chamber (102), wherein said first plasma chamber (102) also defines the hole (114) that is used for drawing from described first plasma electronics; With

Second plasma chamber (116), described second plasma chamber (116) comprises second air inlet (124) that is used to receive second gas, wherein said second plasma chamber (116) also defines with hole (114) fluid of described first plasma chamber (102) and is communicated with, be used to receive hole (117) from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber (116), described second plasma chamber (116) also defines the fairlead (120) that is used for drawing from described second plasma ion.

12. ion source according to claim 11, wherein said first plasma chamber also defines the SS that is used to form the path that enters high vacuum region, the area size of wherein said SS greater than be used for from the relevant area size in hole that described first plasma is drawn electronics.

13. ion source according to claim 11, wherein said plasma generation parts comprise cathode heater and anode.

14. ion source according to claim 11, wherein said plasma generation parts comprise radio-frequency antenna.

15. ion source according to claim 11, also comprise the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber and second plasma chamber, to realize that described derivative electronics is transported to described second plasma chamber from described first plasma chamber.

16. ion source according to claim 11, wherein said first gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases.

17. ion source according to claim 11, wherein said second gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases; Or decaborane (B for example ₁₀H ₁₄) or 18 borine (B ₁₈H ₂₂) big molecular gas.

18. ion source according to claim 11 also comprises the draw equipment relevant with described fairlead, the wherein said equipment of drawing is exercisable to draw ion from described ion source, is generally used for forming ion beam.

19. an ion implant systems, described ion implant systems comprises:

Be used to produce the double-plasma ion source of ion beam;

Wire harness assembly, described wire harness assembly comprise and are used to receive from described ionogenic described ion beam and quality analysis apparatus through the ion beam of quality analysis is provided that described ion beam through quality analysis comprises the ion of the mass-energy scope with expectation;

Differentiate the hole, described resolution hole is used to revise described beam characteristics, and described beam characteristics comprises acceleration, deceleration and focusing; With

Terminal workstation, described terminal workstation are arranged to described ion beam injects workpiece.

20. ion implant systems according to claim 19, wherein ion source (100) comprising:

First plasma chamber (102), described first plasma chamber (102) comprises plasma generation parts (104) and is used to receive first air inlet (122) of first gas, so that described plasma generation parts (104) interact with described first gas, to produce first plasma in described first plasma chamber (102), wherein said first plasma chamber (102) also defines the hole (114) that is used for drawing from described first plasma electronics; With

Second plasma chamber (116), described second plasma chamber (116) comprises second air inlet (118) that is used to receive second gas, wherein said second plasma chamber (116) also defines to be aimed at the hole (112) of described first plasma chamber (102) in fact, be used to receive hole (117) from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber (116), described second plasma chamber (116) also defines the fairlead (120) that is used for drawing from described second plasma ion.

21. ion implant systems according to claim 20, wherein said ionogenic first gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases.

22. ion implant systems according to claim 20, wherein said ionogenic second gas comprise at least a in following:

The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example ₃), arsenic hydride (AsH ₃) or hydrogen phosphide (PH ₃) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example ₃) or oxygen (O ₂) active gases; Or decaborane (B for example ₁₀H ₁₄) or 18 borine (B ₁₈H ₂₂) big molecular gas.

23. ion implant systems according to claim 19, wherein ion source (100) also comprises the draw equipment relevant with described fairlead (120), the wherein said equipment of drawing is exercisable to draw ion from described ion source (100), is generally used for forming ion beam.

24. ion implant systems according to claim 19, wherein said ion source (100) also comprises the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber (102) and second plasma chamber (116), to realize that described derivative electronics is transported to described second plasma chamber (116) from described first plasma chamber (102).

25. ion implant systems according to claim 19, wherein said ion source (100) also comprises plasma generation parts (104), and described plasma generation parts (104) comprise cathode heater silk, anode and radio-frequency antenna.

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