CN101903437B - Film-like resin composition for seal filling, semiconductor package and semiconductor device manufacturing method using the resin composition, and semiconductor device - Google Patents

Abstract

The present invention provides a film-like resin composition for sealing and filling, which contains a thermoplastic resin, (b) an epoxy resin, (c) a curing agent, and (d) a compound having 2 or more phenolic hydroxyl groups.

Description

Film-like resin composition for seal filling, semiconductor package and semiconductor device manufacturing method using the resin composition, and semiconductor device

technical field

The present invention relates to a film-like resin composition for seal filling, a semiconductor package using the resin composition, a method for manufacturing a semiconductor device, and a semiconductor device.

Background technique

In recent years, with the progress of miniaturization and high functionality of electronic equipment, miniaturization, thinning and improvement of electrical characteristics (response to high-frequency transmission, etc.) The method of mounting a semiconductor chip on a substrate by bonding has shifted to a flip-chip connection method in which conductive protrusions called bumps are formed on a semiconductor chip and directly connected to substrate electrodes.

As flip-chip connection methods, there are known methods of metal bonding using solder or tin, methods of metal bonding by applying ultrasonic vibrations, and methods of maintaining mechanical contact using the shrinkage force of resin. Among them, in terms of productivity and connection From the viewpoint of reliability, the method of metal joining using solder or tin is widely used, especially the method of using solder shows high connection reliability, so it is suitable for mounting MPU (Micro Processing Unit) and the like.

In the flip-chip connection method, there is a risk that the thermal stress caused by the difference in thermal expansion coefficient between the semiconductor chip and the substrate will concentrate on the connection part and cause damage to the connection part. Therefore, in order to disperse the thermal stress and improve connection reliability, it is necessary to use a resin Seal and fill the gap between the semiconductor chip and the substrate. As a sealing filling method of resin, generally, after connecting the semiconductor chip and the substrate with solder, etc., a liquid sealing resin is poured into the gap by utilizing the capillary phenomenon.

In this method, when connecting the chip and the substrate, in order to reduce and remove the oxide film on the surface of solder and so on to facilitate metal bonding, a flux made of rosin or organic acid is used. In the case of liquid resin, it may cause air bubbles called voids, or cause corrosion of wiring due to acid components, and reduce connection reliability. Therefore, a process of cleaning residues is required.

However, in recent years, as the connection pitch has become narrower, the gap between the semiconductor chip and the substrate has become narrower, making it difficult to remove flux residues. Furthermore, since it takes a long time to inject the liquid resin into the narrow space between the semiconductor chip and the substrate, productivity decreases.

Therefore, there is a need for a sealing resin capable of reductively removing an oxide film existing on a metal surface such as solder (hereinafter referred to as flux activity). By using such a sealing resin, it is considered that the gap between the semiconductor chip and the substrate can be sealed and filled with the resin while connecting the semiconductor chip and the substrate after supplying the sealing resin to the substrate, and cleaning of flux residues can be omitted. In addition, the following publications are known as contents related to flux activity.

[Patent Document 1] Japanese Unexamined Patent Publication No. 2001-223227

[Patent Document 2] Japanese Unexamined Patent Publication No. 2005-272547

[Patent Document 3] Japanese Patent Laid-Open No. 2006-169407

invention disclosure

The problem to be solved by the invention

As sealing resins showing flux activity, materials compounded with organic acids such as carboxylic acids are being studied, but since organic acids can be used as curing agents for epoxy resins widely used in sealing resins, it is difficult to control reactivity and ensure their preservation Stability, or the corrosion of the wiring due to the acid component may cause a decrease in insulation reliability. Also, when the sealing resin is liquid, when the resin is applied to the substrate using a dispenser or the like, it may be difficult to stably control the supply amount due to changes in resin viscosity over time.

An object of the present invention is to provide a film-like resin composition for seal filling which exhibits good storage stability and flux activity, and which can manufacture semiconductor products (semiconductor packages, semiconductor devices, etc.) excellent in connection reliability. Another object of the present invention is to provide a semiconductor product using the resin composition and a method for producing the same.

method used to solve the problem

The present invention provides a film-like resin composition for seal filling containing (a) a thermoplastic resin, (b) an oxygen resin, (c) a curing agent, and (d) a compound having two or more phenolic hydroxyl groups.

The film-like resin composition for seal filling of the present invention exhibits good storage stability and flux activity, and by using the composition, semiconductor products (semiconductor packages, semiconductor devices, etc.) excellent in connection reliability can be produced. In addition, since the above-mentioned composition is in the form of a film, it is exceptionally superior in handling and workability compared to liquid sealing resins. In addition, the inventors of the present invention are not limited to a specific theory, but believe that the main reason why the flux activity can be increased and the connection reliability can be prevented is that the film-like resin composition for seal filling of the present invention contains a compound having two or more phenolic hydroxyl groups. .

In addition, the film-like resin composition for seal filling of the present invention can also be understood as one containing (a) a thermoplastic resin, (b) an epoxy resin, (c) a curing agent, and (d) a compound having two or more phenolic hydroxyl groups. Film-like sealing filler (film-like sealing material or film-like filling material).

(d) A compound having 2 or more phenolic hydroxyl groups, preferably a compound having 1 or more phenolic hydroxyl groups and a compound selected from aromatic compounds having 2 halomethyl groups, alkoxymethyl groups or hydroxymethyl groups, divinyl groups A polycondensate of at least one compound selected from the group consisting of benzene and aldehyde compounds. Examples of polycondensates include phenol novolac resins, cresol novolak resins, naphthol novolak resins, phenol aralkyl resins, and the like.

(d) The compound having two or more phenolic hydroxyl groups is preferably a liquid compound at 120 to 300°C (preferably 120 to 220°C, more preferably 180 to 220°C). That is to say, the compound is preferably a compound that exists in a liquid form within the range of 120° C. corresponding to the melting temperature of low-melting solder to 300° C. corresponding to the melting temperature of high-melting solder (it may be liquid below this temperature range). ). With this configuration, the oxide film on the solder surface can be removed more uniformly.

(c) The curing agent is preferably an imidazole compound. By using an imidazole compound as a curing agent, both the storage stability as a film-like resin composition for seal filling and the heat resistance of a cured product can be improved.

The film-like resin composition for seal packing of the present invention preferably further contains an inorganic filler. By containing the inorganic filler, for example, viscosity adjustment of the film-like resin composition for seal filling can be facilitated, and cured product properties can also be controlled.

The present invention also provides a method for manufacturing a semiconductor package in which a semiconductor chip and a substrate are flip-chip connected using the film-like resin composition for seal filling.

The present invention further provides a method for manufacturing a semiconductor device in which a semiconductor package and a substrate are connected using the film-like resin composition for seal filling.

In these manufacturing methods, compared with conventional manufacturing methods using a method of injecting a liquid sealing resin, metal bonding becomes easier, and a semiconductor package and a semiconductor device having excellent connection reliability can be obtained.

The present invention also provides a semiconductor device having a substrate connected using the above-mentioned film-like resin composition for seal filling.

A semiconductor device having a substrate connected using the above-mentioned film-like resin composition for sealing and filling has extremely excellent connection reliability compared with a semiconductor device manufactured by injecting a liquid sealing resin.

Invention effect

According to the present invention, it is possible to provide a film-like resin composition for seal filling that exhibits good storage stability and flux activity, and can manufacture semiconductor products (semiconductor packages, semiconductor devices, etc.) excellent in connection reliability. In addition, there are provided a semiconductor product using the resin composition, which is exceptionally excellent in connection reliability, and a method for producing the same.

A brief description of the drawings

[ Fig. 1] Fig. 1 is a cross-sectional view showing an embodiment of a semiconductor package using a film-like resin composition for seal filling.

[ Fig. 2] Fig. 2 is a cross-sectional view showing an embodiment of a semiconductor device using a film-like resin composition for seal filling.

[ Fig. 3] Fig. 3 is a cross-sectional view showing an embodiment of a method of manufacturing a semiconductor package using a film-like resin composition for seal filling.

Symbol Description

1...solder ball, 2...electrode pad, 3, 19...bump, 4, 11, 14...wiring, 5, 18...semiconductor chip, 6, 12, 16. ..film-like resin composition for seal filling, 7, 15...substrate, 8...female board, 9...inner layer wiring, 10...channel, 13...through hole, 17 ...connectors, 20...plates, 100...semiconductor packages, 200...semiconductor devices.

Best Mode for Carrying Out the Invention

Hereinafter, the present invention will be described in detail through preferred embodiments.

The film-like resin composition for seal filling of the present invention contains (a) a thermoplastic resin, (b) an epoxy resin, (c) a curing agent, and (d) a compound having two or more phenolic hydroxyl groups. Hereinafter, each component is demonstrated.

(a) Thermoplastic resin

The (a) thermoplastic resin used in the present invention is solid at the storage temperature (below 25°C) of the film-like resin composition for seal filling, and is at least at the application temperature (above 100°C) of the film-like resin composition for seal fill resin in molten state.

(a) Thermoplastic resins include phenoxy resins, polyimide resins, polyamide resins, polycarbodiimide resins, cyanate resins, acrylic resins, polyester resins, polyethylene resins, polyethersulfone resins, Resins, polyetherimide resins, polyvinyl acetal resins, polyurethane resins, acrylic rubbers, etc. Among them, phenoxy resins, polyimide resins, and cyanate resins that are excellent in heat resistance and film-forming properties are preferable , polycarbodiimide resin, etc., more preferably phenoxy resin, polyimide resin. A phenoxy resin having a fluorene skeleton in the molecule is particularly preferable. The glass transition temperature of this phenoxy resin is about 90°C, which is higher than other phenoxy resins (about 60°C) that do not have a fluorene skeleton. Glass transition temperature, improve heat resistance.

(a) The weight-average molecular weight of the thermoplastic resin is preferably greater than 5,000, more preferably 10,000 or greater, and still more preferably 20,000 or greater. When the weight average molecular weight is 5000 or less, film forming ability may fall. In addition, the weight-average molecular weight is a value measured in terms of polystyrene using GPC (Gel Permeation Chromatography). In addition, these thermoplastic resins may be used alone or as a mixture or copolymer of two or more.

(b) epoxy resin

The (b) epoxy resin used in the present invention is a compound having two or more epoxy groups (oxirane rings, oxirane) (difunctional or more).

As (b) epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolac type epoxy resin, cresol novolak type epoxy resin, Oxygen resin, biphenyl type epoxy resin, hydroquinone type epoxy resin, epoxy resin containing diphenyl sulfide skeleton, phenol aralkyl type polyfunctional epoxy resin, polyfunctional epoxy resin containing naphthalene skeleton , multifunctional epoxy resin containing dicyclopentadiene skeleton, multifunctional epoxy resin containing triphenylmethane skeleton, aminophenol type epoxy resin, diaminodiphenylmethane type epoxy resin, and various other multifunctional epoxy resins epoxy resin etc.

Among them, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, polyfunctional epoxy resins containing a naphthalene skeleton, and bicyclic epoxy resins are preferably used from the viewpoint of low viscosity, low water absorption, and high heat resistance. Pentadiene-skeleton polyfunctional epoxy resins, triphenylmethane-skeleton-containing polyfunctional epoxy resins, and the like. In addition, the properties of these epoxy resins may be liquid or solid at 25°C. For solid epoxy resins, for example, when heating and melting solder for connection, it is preferable to use a solid epoxy resin whose melting point or softening point is higher than the melting point of solder. low resin. In addition, these epoxy resins can be used individually or in mixture of 2 or more types.

In addition, the solder used in semiconductor products (semiconductor packages, semiconductor devices, etc.) to which the film-like resin composition for seal filling of the present invention is applied may be lead-containing solder or lead-free solder (for example, SnAgCu-based, SnZnBi system, SnCu system). In addition, low melting point solder (melting point: about 120 to 150° C.) or high melting point solder (melting point: about 180 to 300° C.) may be used.

(c) curing agent

The (c) curing agent used in the present invention refers to a curing agent for curing the (b) epoxy resin, and it may be a component other than the (b) epoxy resin (for example, a compound having two or more phenolic hydroxyl groups) A substance that produces a curing reaction.

As the (c) curing agent, imidazole compounds, acid anhydrides, amines, hydrazides, polythiols, Lewis acid-amine complexes, and the like can be used. Among them, an imidazole compound excellent in storage stability and heat resistance of a cured product is preferable. When the curing agent is an imidazole compound, for example, 2MZ, C11Z, 2PZ, 2E4MZ, 2P4MZ, 1B2MZ, 1B2PZ, 2MZ-CN, 2E4MZ-CN, 2PZ-CN, C11Z-CN, 2PZ-CNS, C11Z-CNS, 2MZ-A, C11Z-A, 2E4MZ-A, 2P4MHZ, 2PHZ, 2MA-OK, 2PZ-OK (manufactured by Shikoku Chemical Industry Co., Ltd., product name), etc., and compounds obtained by adding these imidazole compounds to epoxy resins . In addition, materials in which these curing agents are coated with polyurethane-based or polyester-based polymers and microencapsulated are preferred because they extend the pot life. These substances may be used alone or in combination of two or more.

(d) Compounds having two or more phenolic hydroxyl groups

(d) The compound having two or more (meaning having two or more per molecule) phenolic hydroxyl groups used in the present invention is a compound having two or more phenolic hydroxyl groups, that is, hydroxyl groups linked to a benzene ring. That is, (d) the compound having two or more phenolic hydroxyl groups is a compound having at least one benzene ring and at least two hydroxyl groups connected to the benzene ring (which may form a condensed ring).

As such compounds, for example, catechol, resorcinol, hydroquinone, biphenol, dihydroxynaphthalene, hydroxyhydroquinone, pyrogallol, methylene bisphenol (bisphenol Phenol F), isopropylidene bisphenol (bisphenol A), ethylene bisphenol (bisphenol AD), 1,1,1-tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone , trihydroxyacetophenone, polyvinylphenol, polyfunctional phenolic compounds containing trisphenolmethane skeleton, etc.

Further, as a compound having two or more phenolic hydroxyl groups, a compound having one or more phenolic hydroxyl groups and an aromatic compound having two halogenated methyl groups, alkoxymethyl groups or hydroxymethyl groups, divinyl A polycondensate of at least one compound selected from the group consisting of benzene and aldehyde compounds.

As a compound having one or more phenolic hydroxyl groups, for example, phenol, alkylphenol, naphthol, cresol, catechol, resorcinol, hydroquinone, biquinone, dihydroxynaphthalene, Hydroquinone, pyrogallol, methylene bisphenol (bisphenol F), isopropylidene bisphenol (bisphenol A), ethylene bisphenol (bisphenol AD), 1,1,1- Tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone, poly(p-vinylphenol), and the like.

Examples of aromatic compounds having two halomethyl groups, alkoxymethyl groups or hydroxymethyl groups include 1,2-bis(chloromethyl)benzene, 1,3-bis(chloromethyl)benzene , 1,4-bis(chloromethyl)benzene, 1,2-bis(methoxymethyl)benzene, 1,3-bis(methoxymethyl)benzene, 1,4-bis(methoxy Methyl)benzene, 1,2-bis(hydroxymethyl)benzene, 1,3-bis(hydroxymethyl)benzene, 1,4-bis(hydroxymethyl)benzene, bis(chloromethyl)biphenyl, Bis(methoxymethyl)biphenyl, etc. By reacting any one of aromatic compounds and divinylbenzene having 2 halomethyl groups, alkoxymethyl groups or hydroxymethyl groups with compounds having 1 or more phenolic hydroxyl groups, it is also possible to form Compounds of the above phenolic hydroxyl groups, and exhibit the same effect of improving flux activity.

Examples of the aldehyde compound include formaldehyde (formalin as its aqueous solution), paraformaldehyde, trioxane, hexamethylenetetramine, and the like.

As the above-mentioned polycondensate, for example, phenol novolac resin which is a polycondensate of phenol and formaldehyde, cresol novolac resin which is a polycondensate of cresol and formaldehyde, naphthol novolac resin which is a polycondensate of naphthols and formaldehyde Varnish resins, phenol aralkyl resins which are polycondensates of phenol and 1,4-bis(methoxymethyl)benzene, polycondensates of bisphenol A and formaldehyde, polycondensates of phenol and divinylbenzene, cresol , naphthol, and formaldehyde condensation polymers, etc., rubber-modified compounds of these condensation polymers, or substances having an aminotriazine skeleton or a dicyclopentadiene skeleton introduced into the molecular skeleton may also be used.

In addition, the properties of these compounds may be solid or liquid at room temperature, but in order to uniformly reduce and remove the oxide film on the metal surface without impairing the wettability of the solder, it is preferable to use a liquid substance. These compounds having a phenolic hydroxyl group are allylated to form a liquid substance, such as allylated phenol novolac resin, diallyl bisphenol A, diallyl bisphenol F, diallyl bisphenol Hydroquinone, etc. These compounds may be used alone or in combination of two or more.

Furthermore, for example, when connecting by heating and melting solder, the compound added to impart activity to the flux must not decompose and volatilize during heating, and must remain in the adhesive (film-like resin composition for seal filling). That is, the compound added to impart activity to the flux preferably has a minimum temperature at which the thermogravimetric change rate of 0% (residual weight is 0) measured by the TGA (Thermal Gravimetory Analysis) method is higher than the melting temperature of the solder. In addition, when using a compound that is solid at normal temperature as a compound added to impart activity to the flux, it is preferable that the melting temperature of the compound is lower than the melting temperature of the solder, that is, in order to uniformly remove the oxide film on the surface of the solder, At the melting temperature of solder, the compound is preferably fluid, that is, exists in a liquid form or a molten state.

In addition, the so-called flux activity in the present invention refers to the ability to reduce and remove the oxide film on the surface of the metal, so that the metal can be easily melted, and the state of forming a metal joint can be obtained without hindering the wetting and spreading of the molten metal. For example, It means that when the solder balls are heated and melted on a copper plate or the like for connection, the size of the solder balls becomes larger than the initial diameter and wets and spreads on the copper surface, and when the melted solder balls are subjected to a shear test, it can A state in which no cracks occurred at the interface between the solder and copper, but the solder balls were enlarged and damaged was obtained.

In addition, when the change rate of the molten solder ball with respect to its initial diameter is defined as the solder wetting spread rate described later, in order to realize good flux activity, the solder wetting spread rate is preferably 20% or more, more preferably 30% or more, and more preferably 40% or more.

The compounding quantity of (a) thermoplastic resin is 5-50 weight part with respect to the total amount of (a) thermoplastic resin and (b) epoxy resin 100 weight part, Preferably it is 5-50 weight part, More preferably, it is 5-40 weight part, Most preferably, it is 10 to 35 parts by weight. When the compounding amount is less than 5 parts by weight, it tends to be difficult to form a film, and when it exceeds 50 parts by weight, there is a risk of high viscosity and poor connection.

(b) The compounding quantity of epoxy resin is preferably 10 to 90 parts by weight, more preferably 15 to 90 parts by weight, and further Preferably it is 20-80 weight part. When the compounding amount is less than 10 parts by weight, the heat resistance of the cured product tends to decrease, and when it exceeds 90 parts by weight, there is a risk that the film-forming properties may decrease.

The compounding quantity of (c) hardening|curing agent differs with the kind of hardening|curing agent, Generally, it is 0.05-30 weight part with respect to 100 weight part of (b) epoxy resins. When the curing agent is an imidazole compound, it is preferably 0.1 to 20 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the epoxy resin (b). When the compounding amount is less than 0.1 parts by weight, curing is insufficient. Moreover, when it is more than 20 weight part, the heat resistance of hardened|cured material may fall.

(d) The compounding quantity of the compound which has 2 or more phenolic hydroxyl groups is preferably 0.5-20 weight part with respect to 100 weight part of total amounts of (a) thermoplastic resin and (b) epoxy resin, and more preferably 1-20 weight part 15 parts by weight. When the compounding amount is less than 0.5 parts by weight, the activity of the flux may be insufficient, and when it exceeds 20 parts by weight, it is not a single curing system of epoxy resin, but a curing system of epoxy resin and phenols is formed. system (phenols are inserted into the network of the cured product), there is a risk that the heat resistance of the cured product may be lowered because the compound having a phenolic hydroxyl group may not fully express the characteristics of the epoxy resin.

In addition, (d) the type and optimum compounding amount of the compound having two or more phenolic hydroxyl groups take into consideration not only the presence or absence of flux activity, but also film-forming properties, workability during film production (change in viscosity of varnish, etc.), film Handling properties (viscosity, punching or cutting processability, etc.), etc., are set.

The film-like resin composition for seal filling of the present invention preferably further contains an inorganic filler. By containing the inorganic filler, for example, viscosity adjustment of the film-like resin composition for seal filling can be facilitated, and cured product properties can also be controlled. In addition, it is also possible to suppress generation of voids at the time of connecting the semiconductor chip and the substrate and to suppress moisture absorption.

It does not specifically limit as an inorganic filler, For example, glass, silica (silica), aluminum oxide (alumina), titanium oxide (titania), magnesium oxide (magnesia), carbon black, mica, barium sulfate etc. are mentioned. These fillers may be used alone or in combination of two or more. In addition, it may be a composite oxide containing two or more metal oxides (not a material formed by simply mixing two or more metal oxides, but a material in which metal oxides are chemically bonded to each other to form an inseparable state), For example, composite oxides formed of silica and titania, silica and alumina, boria and alumina, silica, alumina, and magnesia may be mentioned. In addition, the particle diameter of the filler is preferably 10 μm or less in average particle diameter in order to prevent the filler from being captured by the connection portion and hindering electrical connection during flip-chip connection. Furthermore, in order to adjust the viscosity and the physical properties of the cured product, two or more fillers having different particle diameters may be used in combination.

The compounding quantity of the filler in this invention is preferably 200 weight part or less, more preferably 150 weight part or less with respect to 100 weight part of total amounts of (a) thermoplastic resin and (b) epoxy resin. When the compounding amount is more than 200 parts by weight, the viscosity of the adhesive may increase to cause poor connection, and the flexibility of the film tends to decrease and become brittle.

In addition, when the inorganic filler is contained, by making the refractive index of the inorganic filler and the resin substantially the same, a transmittance of at least 10% or more for light having a wavelength of 555 nm can be realized. By having such a transmittance, in the method of individualizing the film-like resin composition for seal filling after sticking it to a substrate or semiconductor chip, it is easy to identify the film-like resin composition for seal filling through the The alignment mark where the singulation position coincides with the position of the substrate and the semiconductor chip.

When an epoxy resin is used as the resin, the refractive index of the inorganic filler is preferably 1.53 to 1.65 relative to the refractive index of the epoxy resin which is about 1.6. Examples of inorganic fillers exhibiting such a refractive index include barium sulfate, magnesia, composite oxides of silica and titania, composite oxides of silica and alumina, boron oxide, and alumina. The composite oxide formed, the composite oxide formed by silica, alumina and magnesia, etc.

In addition, when using the film-like resin composition for seal filling of the present invention to connect a semiconductor chip and a substrate, the film-like resin composition for seal fill that has been cut into individual pieces may be pasted on the substrate, or may be pasted to form a semiconductor chip. on the surface of the bump. In addition, before separating the substrates, the film-like resin composition for seal filling may be bonded to the entire substrate in a state where a plurality of substrates are connected, and after connecting the semiconductor chips, the separation may be performed. In addition, the film-like resin composition for seal filling may be pasted on a semiconductor wafer before being separated into semiconductor chips, and may be separated into semiconductor chips by dicing.

Furthermore, additives such as a curing accelerator, a silane coupling agent, a titanium coupling agent, an antioxidant, a leveling agent, and an ion scavenger may be added to the film-like resin composition for seal filling of the present invention. These additives may be used alone or in combination of two or more. What is necessary is just to adjust the compounding quantity so that the effect of each additive can be expressed.

The viscosity of the film-like resin composition for seal filling of the present invention is preferably 50 Pa·s or less, more preferably 40 Pa·s or less, and still more preferably 30 Pa·s or less at 150°C. When the viscosity is higher than 50 Pa·s, poor connection may occur. Viscosity can be measured by using a shear viscoelasticity measuring device (for example, ARES manufactured by TA Instruments Co., Ltd.). It can be measured under the condition of 10 Hz, and the measurement can be carried out fully automatically.

In addition, it can also be calculated by the following method: sandwich the film-like resin composition for sealing and filling punched out into a circle between glass plates, and pressurize at a predetermined temperature and a predetermined pressure for a predetermined time. The change in resin thickness before and after is calculated. That is, it can be calculated by the following formula (1) (Shiller's formula concerning uniaxial compression flow between parallel plates).

η=8πFtZ ⁴ Z ₀ ⁴ /3V ² (Z ₀ ⁴ -Z ⁴ )...(1)

η: Viscosity (Pa·s)

F: load (N)

t: pressurization time (s)

Z: Resin thickness after pressurization (m)

Z ₀ : Resin thickness before pressurization (m)

V: volume of resin (m ³ )

The gelation time at 260° C. of the film-like resin composition for seal filling of the present invention is preferably 1 to 60 s, more preferably 3 to 40 s, and still more preferably 5 to 30 s. If it is shorter than 1 s, the solder etc. will solidify before melting, and there is a risk of poor connection, and if it is longer than 60 s, there may be a decrease in productivity or a decrease in reliability due to insufficient solidification. risk. In addition, the gelation time means the time until the film-like resin composition for seal filling of the present invention is placed on a hot plate set at 260° C. and stirred with a spatula or the like until it becomes impossible to stir.

The film-like resin composition for seal filling of the present invention can be produced, for example, as follows. That is, in organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone, mix (a) thermoplastic resin, (b) epoxy resin, (c) curing agent, (d) Compounds, inorganic fillers, and other additives are used to prepare a varnish, and the varnish is coated on a film substrate such as polyethylene terephthalate resin that has undergone mold release treatment using a knife coater or a roll coater, and then Production is carried out by drying and removing the organic solvent.

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor package manufactured using the film-like resin composition for seal filling of the present invention. The semiconductor package 100 shown in FIG. 1 has a structure of a semiconductor chip 5 having bumps 3 (solder bumps, etc.) on one side, and electrode pads having wiring 4 on one side and solder balls 1 formed on the other side. The substrate 7 of 2 is bonded with the film-like resin composition 6 for sealing and filling, so that the bump 3 and the wiring 4 are electrically connected. In the semiconductor package 100 , the gap between the semiconductor chip 5 and the substrate 7 and the periphery of the semiconductor chip 5 are sealed or filled with the film-like resin composition 6 for seal filling.

The semiconductor chip 5 is not particularly limited, and various semiconductors such as elemental semiconductors such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide can be used.

As the substrate 7, an ordinary circuit substrate may be used, or a semiconductor chip may be used. In the case of a circuit board, it is possible to use a substrate in which a wiring pattern is formed by etching away unnecessary positions in a metal layer such as copper formed on the surface of an insulating substrate such as glass epoxy resin, polyimide, polyester, or ceramics. A substrate with a wiring pattern formed on the surface of an insulating substrate by copper plating, a substrate with a wiring pattern formed by printing a conductive substance on the surface of an insulating substrate, etc. On the surface of the wiring pattern (wiring 4), a metal layer composed of low-melting-point solder, high-melting-point solder, tin, indium, gold, nickel, silver, copper, palladium, etc. may be formed, and the metal layer may be made of only It may be composed of a single component or may be composed of multiple components. In addition, a structure in which a plurality of metal layers are stacked can also be formed.

As the material of the conductive protrusion called bump 3, a material composed of low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, copper, etc. can be used, and it can be composed of only a single component, or can be Consists of various ingredients. In addition, it is also possible to form a structure in which these metals are laminated. The bumps may be formed on the semiconductor chip 5 , may be formed on the substrate 7 , or may be formed on both the semiconductor chip 5 and the substrate 7 .

A semiconductor package is a package formed by mounting a semiconductor chip on a substrate called an interposer and sealing it with resin, for example, CSP (Chip Scale Package) or BGA (Ball Grid Array) wait. Also, as a semiconductor package that can be mounted on a substrate without an interposer by rewiring the electrode portion of the semiconductor chip on the surface of the semiconductor chip, for example, a package called a wafer level package can be cited. The substrate on which the semiconductor package is mounted may be a general circuit substrate, and may be called a mother board as opposed to an interposer.

2 is a cross-sectional view showing an embodiment of a semiconductor device manufactured using the film-like resin composition for seal filling of the present invention. The semiconductor device 200 shown in FIG. 2 has a structure in which a mother board 8 and a semiconductor package 100 (see FIG. 1 ) are joined by a film-like resin composition 12 for sealing and filling, so that solder balls 1 and wiring 11 are electrically connected. , the mother board 8 is formed with inner layer wiring 9 , channels 10 and through holes 13 and has wiring 11 on one side. In the semiconductor device 200 , the gap between the substrate 7 and the mother board 8 and the periphery of the semiconductor package 100 are sealed or filled with the film-like resin composition 12 for seal filling.

Next, the manufacturing method of the semiconductor package of this invention is demonstrated. 3 is a cross-sectional view showing an embodiment of a semiconductor chip manufacturing method using the film-like resin composition for seal filling of the present invention.

(1) First, the substrate 15 on which the wiring 14 is formed as shown in FIG. 3( a ) is prepared. Then, as shown in FIG. 3( b ), the film-like resin composition 16 for sealing and filling is laminated and pasted on the substrate 15 so as to cover the wiring 14 . Pasting can be performed by a heat press, a roll laminator, a vacuum laminator, or the like. The supply amount of the film-like resin composition 16 for seal filling is set according to the sticking area and film thickness, and is regulated by the size of the semiconductor chip 18, the bump height (the height of the bump 19 from the surface of the semiconductor chip 18), etc., Even if the viscosity etc. changes with time, the supply amount can be easily controlled.

In addition, the film-like resin composition 16 for seal filling may be pasted on the semiconductor chip 18, or the film-like resin composition 16 for seal filling may be pasted on a semiconductor wafer and then diced to separate it into semiconductor chips. 18, so that the semiconductor chip 18 on which the film-like resin composition 16 for sealing and filling is pasted can be produced.

(2) Next, as shown in FIG. 3(c), a semiconductor chip 18 having bumps 19 (solder bumps) is mounted on a connection head 17 of a connection device such as a flip-chip bonder. The substrate 15 with the film-like resin composition 16 for sealing and filling and the wiring 14 is installed on the platen 20 of the same connection device, and the position is aligned, and then the semiconductor chip 18 and the semiconductor chip 18 are heated at a temperature above the melting point of the bump 19. The substrate 15 is pressed. Next, as shown in FIG. 3( d), the semiconductor chip 18 and the substrate 15 are electrically connected by bonding the bump 19 and the wiring 14, and at the same time, the semiconductor chip 18 is sealed and filled with the melted film-like resin composition 16 for sealing and filling. and the gap between the substrate 15. At this time, due to the flux activity of the film-like resin composition 16 for seal filling, the oxide film on the surface of the bump 19 is reduced and removed, the bump 19 is melted, and a connection portion is formed by metal bonding.

In addition, although it is not described in FIG. 3, it is also possible to make the film for sealing filling by aligning the semiconductor chip and the substrate, and pressing it while heating the bump (solder bump) at a temperature that does not melt. The resin composition melts, removes the resin between the bumps of the semiconductor chip and the substrate electrodes, and simultaneously seals and fills the gap between the semiconductor chip and the substrate, temporarily fixes the semiconductor chip and the substrate, and then heats the bumps in a reflow furnace. Melt and connect the semiconductor chip and the substrate, thereby manufacturing a semiconductor package.

(3) Furthermore, in order to improve connection reliability, you may heat-process the said semiconductor package in a heating oven etc., and harden|cure the film-form resin composition for seal filling further.

The method of manufacturing a semiconductor device using the film-like resin composition for seal filling of the present invention can be carried out substantially in the same manner as the method of manufacturing the aforementioned semiconductor chip. That is, instead of the semiconductor chip 18 having bumps 19 in FIG. 3, the semiconductor package 100 of FIG. 1 is used, and the semiconductor chip 18 in FIG. The mother board 8 of the wiring 11 replaces the substrate 15 on which the wiring 14 is formed in FIG. 8. While heating to the melting point or higher of the solder ball 1, the two are bonded under pressure.

Example

Hereinafter, the present invention will be described with reference examples, examples, and comparative examples, but the scope of the present invention is not limited thereto.

(reference example)

With 25 parts by weight of phenoxy resin FX293 (manufactured by Dongdu Chemical Industry Co., Ltd., product name) as (a) thermoplastic resin, 30 parts by weight of solid polyfunctional epoxy resin EP1032H60 (Japanese epoxy resin) as (b) epoxy resin Resin Co., Ltd., product name) and 45 parts by weight of liquid bisphenol A epoxy resin EP828 (Japan Epoxy Resin Co., Ltd., product name), as (d) 5 parts by weight of a compound having 2 or more phenolic hydroxyl groups. Table 1 For the compounds shown, 100 parts by weight of SE6050 (manufactured by Admatechs Co., Ltd., product name, average particle diameter 2 μm) as a spherical silica filler was dissolved and mixed in a toluene-ethyl acetate solvent so that the solid content concentration was 60 to 70%. Make varnish. This varnish was applied on a separator (PET film) using a knife coater, and then dried in an oven at 70° C. for 10 minutes to prepare the film-like resin compositions of Reference Examples 1 to 7 with a thickness of 40 to 45 μm. When in use, the two sheets are laminated together by a hot roll laminator, and the thickness is adjusted to be 80-90 μm for use.

(Flux activity evaluation method)

The flux activity of the reference examples was evaluated according to the following procedure.

On the copper surface of a glass epoxy substrate (manufactured by Hitachi Chemical Industry Co., Ltd., product name: MCL-E-679F, thickness 0.3 mm, degreased and pickled) with copper foil on both sides cut into 25 mm squares , adhering a film-like resin composition cut into a 10 mm square, peeling off the diaphragm, and then disposing 5 solder balls on the film-like resin composition (manufactured by Senju Metal Industry Co., Ltd., product name: M705 (Sn-3Ag-0.5Cu) , ball diameter is 0.4mm, melting point is 217～220 ℃), and further set cover glass (size is 18mm square, thickness is 0.17mm), make the sample for evaluation, and, for various film-like resin composition, use 2 A sample is used for evaluation.

The sample for evaluation was placed on a hot plate heated to 160°C for 30 seconds, and then placed on a hot plate heated to 260°C for 30 seconds, and then returned to room temperature, and then the sample for evaluation was immersed in methyl ethyl alcohol. The film-like resin composition was dissolved and removed in a base ketone, and the number and diameter of solder balls remaining on the surface of the glass epoxy substrate were measured. The solder wetting spread rate was calculated by the following formula (2).

Solder wetting spread rate (%) = (diameter of solder ball remaining on the substrate surface - initial solder ball diameter) / initial solder ball diameter × 100...(2)

Furthermore, a shear test was carried out on the solder balls remaining on the surface of the glass epoxy substrate. As a result, the case where a fracture occurred at the interface between the solder ball and the copper foil was recorded as "B", and the case where the solder ball body was broken and damaged indicated that the flux activity was sufficient. , denoted as "A". In addition, the shear test was performed using a bond tester series 4000 (manufactured by DAGE, product name) at room temperature under the conditions of a shear height of 50 μm and a shear rate of 100 μm/s.

(Measurement of volatilization end temperature)

The volatilization end temperature of the compound (the lowest temperature when the thermogravimetric change rate is 0%) was measured using TG/DTA6300 (manufactured by Seiko Instruments Co., Ltd., product name) at a heating rate of 10° C./min and an air flow rate of 200 ml/min. , the measurement temperature range is 30-300°C, and the sample weight is 5-10 mg.

Table 1 shows the evaluation results of flux activity. (In addition, "≥" in Table 1 means "more than" and "<" means "less than".)

[Table 1]

Compound name character Number of phenolic hydroxyl groups Volatilization end temperature (°C) Number of remaining solder balls Solder wetting expansion rate (%) Shear test fracture mode Remarks (manufacturer) Reference example 1 none - - - 3/10 59 A and B mixed - Reference example 2 p-(α-cumyl)phenol Solid (melting point: 75°C) 1 258.7 4/10 50 A and B mixed Kanto Chemical Co., Ltd. Reference example 3 Phenol Novolak Resin Solid state (softening point: 80°C) ≥2 ＜300 8/10 65 A Hitachi Chemical Industry Co., Ltd. HP-850 (product name) Reference example 4 Phenol Aralkyl Resin solid (softened ≥2 ＜300 7/10 64 A Mitsui Chemical Industries, Ltd.

point: 70°C) XLC-3L (product name) Reference example 5 Allylated Phenol Novolac Resin Liquid ≥2 ＜300 9/10 71 A Meiwa Chemical Industry Co., Ltd. MEH8000H (product name) Reference example 6 2,2'-Diallyl bisphenol A Liquid 2 ＜300 8/10 50 A Sigma-Aldrich Corporation Reference example 7 2,5-Dihydroxybenzoic acid Solid (melting point: 95°C) 2 ＜300 8/10 48 A Green Chemical Co., Ltd. Gentisic acid (product name)

In Reference Example 1, although the flux activity believed to be caused by the alcoholic hydroxyl groups present in the phenoxy resin and epoxy resin was observed, its effect was not sufficient, and in Reference Example 2, it did not show for sufficient flux activity. As shown in Reference Examples 3 to 6, by using compounds having two or more phenolic hydroxyl groups, compared with Reference Examples 1 and 2, the solder ball retention rate and the solder wetting spread rate were improved. In the shear test, the solder ball No cracks occurred at the interface with the copper foil, but swelling and damage occurred, and the same flux activity as that of 2,5-dihydroxybenzoic acid (Reference Example 7), which is an organic acid, was exhibited.

(Examples 1 to 4 and Comparative Examples 1 and 2)

With 25 parts by weight of phenoxy resin FX293 (manufactured by Dongdu Chemical Industry Co., Ltd., product name) as (a) thermoplastic resin, 30 parts by weight of solid polyfunctional epoxy resin EP1032H60 (Japanese epoxy resin) as (b) epoxy resin Resin Co., Ltd., product name) and 45 parts by weight of liquid bisphenol A epoxy resin EP828 (Japan Epoxy Resin Co., Ltd., product name), 3 parts by weight of 2,4-dihydroxymethyl as (c) curing agent - 5-phenylimidazole 2PHZ (manufactured by Shikoku Chemicals Co., Ltd., product name), as (d) 5 parts by weight of a compound having 2 or more phenolic hydroxyl groups The compound shown in Table 2, and 100 parts by weight of an inorganic filler as Spherical silica filler SE6050 (manufactured by Admatechs, product name) was dissolved and mixed in a toluene-ethyl acetate solvent so that the solid content concentration was 60 to 70%, to prepare a varnish. This varnish was coated on a separator (PET film) using a knife coater, and then dried in an oven at 70° C. for 10 minutes, thereby producing the varnishes of Examples 1 to 4 and Comparative Examples 1 to 3 with a thickness of 40 to 45 μm. The film-like resin composition for seal filling shown. When in use, the two sheets are laminated together by a hot roll laminator, and the thickness is adjusted to be 80-90 μm for use.

(comparative example 3)

It produced similarly to Examples 1-4 and Comparative Examples 1 and 2 except having made the compounding quantity of the inorganic filler into 220 weight part.

The physical properties of the cured product of the film-like resin composition for seal filling were measured as follows.

(Measurement of average linear expansion coefficient)

The sample processed under the heating condition of 200°C/1h was cut into a material with a size of 3.0mm×25mm, and using TMA/SS6000 (manufactured by Seiko Instruments Co., Ltd., product name), the chuck distance was 15mm, and the temperature was measured. The temperature range was 20 to 300°C, the heating rate was 5°C/min, and the tensile load was 0.5 MPa relative to the cross-sectional area of the film. The average linear expansion coefficient in the temperature range of 40 to 100°C was calculated.

(Determination of elastic modulus and glass transition temperature (Tg))

Preparation The sample processed under the heating condition of 200° C./1 h was cut into a material with a size of 5.0 mm×45 mm, and DMS6100 (manufactured by Seiko Instruments Co., Ltd., product name) was used at a distance between chucks of 20 mm and a frequency of 1 Hz. The storage modulus, loss modulus and tanδ were measured under the condition that the measuring temperature range was 20-300°C and the heating rate was 5.0°C/min, and the storage modulus at 40°C was read as the glass transition temperature ( Tg) the peak temperature of tan δ.

(viscosity measurement)

Prepare the material prepared as follows: stick the film-like resin composition for seal filling punched out into a circle with a diameter of 4 mm on a glass plate of 15 mm square (0.7 mm in thickness), peel off the separator, and place the cover glass (18 mm in size) square, with a thickness of 0.17 mm) to cover the film-like resin composition for seal filling. The materials prepared above were arranged on a flip-chip bonder FCB3 (manufactured by Panasonic Production Technology Co., Ltd., product name), and the temperature of the head was 185°C, the temperature of the platen was 50°C, the load was 12.6N, and the pressing time was Heat and pressurize under the condition of 1s (to 150°C). Assuming that the volume of the resin is constant, the relationship of the following formula (3) holds. Therefore, the radius after pressurization is measured with a microscope, and the viscosity at 150° C. is calculated based on the aforementioned formula (1).

Z/Z ₀ = (r ₀ /r) ² ... (3)

Z ₀ : Resin thickness before pressurization

Z: Resin thickness after pressurization

r ₀ : Radius of the resin before pressurization (2mm because it is punched with a diameter of 4mm)

r: Radius of resin after pressurization

(storage stability)

Place the film-like resin composition for seal filling in a constant temperature bath at 40°C. After 6 days, the material whose viscosity is twice or less than the initial viscosity has storage stability, which is recorded as "A", while the material whose viscosity is more than twice the initial viscosity is not. It has storage stability, and it was described as "B". Viscosity measurement was performed using the aforementioned method.

(Measurement of gelation time)

The film-like resin composition for seal filling from which the separator was peeled was placed on a hot plate at 260° C., and the time until it could not be stirred with a spatula was defined as the gelation time.

(Preparation of connected samples)

On the chip mounting area of a printed circuit board JKITTYPE III (manufactured by Hitachi Super LSI Systems Co., Ltd., product name) with a supporting solder layer of Sn-3.0Ag-0.5Cu formed on the copper wiring surface, under the conditions of 80°C/50N/5s After pasting the film-like resin composition for seal filling cut into 10 mm squares, the separator was peeled off, and a high-melting-point solder bump (95Pb-5Sn ) chip Phase2E175 (manufactured by Hitachi Super LSI Systems Co., Ltd., product name, size: 10mm square, thickness: 550μm, number of bumps: 832, bump pitch: 175μm) and the printed circuit board were aligned, and the load was applied with a load of 5N. Press, while heating with a temperature curve of 180°C/5-30s+230-280°C/5s, connect the chip and the substrate. Then, heat treatment was performed in an oven at 165° C. for 2 hours to prepare a connection sample.

(solder bondability)

The conduction test of the connection sample was performed, and the material which was able to conduct was designated as "A". Then, the cross-section of the connection portion was observed, and the material that was uniformly wetted and bonded to the bump and the supporting solder was designated as "A", and the material that was not uniformly wetted was designated as "B".

(Moisture Reliability)

After placing the connected sample in a test tank set at a temperature of 130°C/relative humidity of 85% for 100 hours, conduct a conduction test and compare it with the connection resistance before placement. The material with a resistance change rate within ±10% is moisture-resistant Reliability, which is recorded as "A".

(insulation reliability)

On a polyimide substrate having a comb-shaped pattern of copper wiring formed with a wiring width of 20 μm and a wiring pitch of 40 μm, the film-like resin assembly for sealing and filling is pasted under the condition of 80°C/100N/5s The object was covered with a comb-shaped pattern, the separator was peeled off, and then heat-treated in an oven at 165° C. for 2 hours to prepare a sample for evaluation. Place the sample in a test tank set at a temperature of 130°C/relative humidity of 85%, apply a DC voltage of 5V to the sample, and continuously measure the insulation in the test tank using migration tester MIG-8600 (manufactured by IMV, product name) resistance. The material which maintained an insulation resistance of 10 ⁶ Ω or more in the 100-hour measurement was designated as "A", and the material with an insulation resistance of less than 10 ⁶ Ω was designated as "B".

(Comprehensive judgment)

As a comprehensive evaluation based on each evaluation index mentioned above, the material which has connection reliability as a film-like resin composition for seal filling was designated as "A", and the material which did not have connection reliability was designated as "B".

The evaluation results are shown in Table 2.

As can be seen from the results shown in Table 2, Examples 1 to 4 showed good storage stability, solder jointability, moisture resistance reliability, and insulation reliability. On the other hand, in Comparative Example 1, in the cross-sectional observation, the bump and the support solder were not uniformly wetted, and the flux activity was insufficient. In Comparative Example 2, although the solder joint property was good, the storage stability was poor, and in the evaluation of insulation reliability, a defect occurred after 80 hours of measurement. In Comparative Example 3, it is considered that the storage stability was poor, and the bump and the support solder were not uniformly wetted, and the viscosity of the film-like resin composition was high, so that the wetting spread of the molten solder was inhibited.

As described above, according to the present invention, it is possible to obtain a film-like resin composition for seal filling that exhibits good storage stability and flux activity, and is excellent in connection reliability. Moreover, by using the film-form resin composition for seal filling of this invention, metal bonding becomes easy, and the semiconductor device excellent in connection reliability can be manufactured. Further, good productivity can be realized.

Industrial Applicability

According to the present invention, it is possible to provide a film-like resin composition for seal filling that exhibits good storage stability and flux activity, and is excellent in connection reliability. In addition, by using the film-like resin composition for seal filling of the present invention, metal bonding can be easily performed and a manufacturing method and a semiconductor device excellent in connection reliability can be provided.

Claims (27)

1. a sealing is filled and is used membranaceous resin combination, and it contains (a) thermoplastic resin, (b) epoxy resin, (c) solidifying agent and the compound that (d) has 2 above phenolic hydroxyl groups,

(d) compound that has 2 above phenolic hydroxyl groups is at least a compound that is selected from the group of being made up of allylation phenol novolac resin, diallyl bisphenol, diallyl Bisphenol F and diallyl '-biphenyl diphenol.

2. sealing as claimed in claim 1 is filled and is used membranaceous resin combination, and wherein, (a) thermoplastic resin is at least a resin that is selected from the group of being made up of phenoxy resin, polyimide resin, cyanate ester resin and polycarbodiimide resin.

3. sealing as claimed in claim 2 is filled and is used membranaceous resin combination, and wherein, said phenoxy resin is the phenoxy resin that intramolecularly has fluorene skeleton.

4. sealing as claimed in claim 1 is filled and is used membranaceous resin combination; Wherein, (b) epoxy resin be selected from by bisphenol A type epoxy resin, bisphenol f type epoxy resin, contain the naphthalene skeleton polyfunctional epoxy resin, contain the polyfunctional epoxy resin of Dicyclopentadiene (DCPD) skeleton and contain at least a resin in the group that the polyfunctional epoxy resin of tritane skeleton forms.

5. sealing as claimed in claim 1 is filled and is used membranaceous resin combination, and wherein, the compound that (d) has 2 above phenolic hydroxyl groups is in the time of 120～300 ℃, to be aqueous compound.

6. sealing as claimed in claim 1 is filled and is used membranaceous resin combination, and wherein, (c) solidifying agent is an imidazolium compounds.

7. sealing as claimed in claim 1 is filled and use membranaceous resin combination, and wherein, (a) use level of thermoplastic resin with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 5～50 weight parts.

8. sealing as claimed in claim 1 is filled and use membranaceous resin combination, and wherein, (b) use level of epoxy resin with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 10～90 weight parts.

9. sealing as claimed in claim 1 is filled and is used membranaceous resin combination, and wherein, (c) use level of solidifying agent with respect to (b) epoxy resin 100 weight parts, is 0.05～30 weight part.

10. sealing as claimed in claim 1 is filled and use membranaceous resin combination, wherein, (d) has the use level of the compound of 2 above phenolic hydroxyl groups, with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 0.5～20 weight part.

11. sealing as claimed in claim 1 is filled and used membranaceous resin combination, it further contains mineral filler.

12. sealing as claimed in claim 11 is filled and used membranaceous resin combination, wherein, said mineral filler is at least a material that is selected from the group of being made up of glass, silicon-dioxide, aluminum oxide, titanium oxide, Natural manganese dioxide, carbon black, mica and permanent white.

13. the method for manufacture of a semiconductor package body, it carries out flip-chip with membranaceous resin combination to semi-conductor chip and substrate through each described sealing filling of claim 1～12 and is connected.

14. the method for manufacture of a semiconductor device, it is filled through each described sealing of claim 1～12 and connects semiconductor package body and substrate with membranaceous resin combination.

15. a semiconductor device, it has the substrate that uses each described sealing filling of claim 1～12 to connect with membranaceous resin combination.

16. contain the application that is used to seal filling of (a) thermoplastic resin, (b) epoxy resin, (c) solidifying agent and the membranaceous resin combination of the compound that (d) has 2 above phenolic hydroxyl groups,

(d) compound that has 2 above phenolic hydroxyl groups is at least a compound that is selected from the group of being made up of allylation phenol novolac resin, diallyl bisphenol, diallyl Bisphenol F and diallyl '-biphenyl diphenol.

17. application as claimed in claim 16, wherein, (a) thermoplastic resin is at least a resin that is selected from the group of being made up of phenoxy resin, polyimide resin, cyanate ester resin and polycarbodiimide resin.

18. application as claimed in claim 17, wherein, said phenoxy resin is the phenoxy resin that intramolecularly has fluorene skeleton.

19. application as claimed in claim 16; Wherein, (b) epoxy resin be selected from by bisphenol A type epoxy resin, bisphenol f type epoxy resin, contain the naphthalene skeleton polyfunctional epoxy resin, contain the polyfunctional epoxy resin of Dicyclopentadiene (DCPD) skeleton and contain at least a resin in the group that the polyfunctional epoxy resin of tritane skeleton forms.

20. application as claimed in claim 16, wherein, the compound that (d) has 2 above phenolic hydroxyl groups is in the time of 120～300 ℃, to be aqueous compound.

21. application as claimed in claim 16, wherein, (c) solidifying agent is an imidazolium compounds.

22. application as claimed in claim 16, wherein, (a) use level of thermoplastic resin with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 5～50 weight parts.

23. application as claimed in claim 16, wherein, (b) use level of epoxy resin with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 10～90 weight parts.

24. application as claimed in claim 16, wherein, (c) use level of solidifying agent with respect to (b) epoxy resin 100 weight parts, is 0.05～30 weight part.

25. application as claimed in claim 16 wherein, (d) has the use level of the compound of 2 above phenolic hydroxyl groups, with respect to (a) thermoplastic resin and (b) total amount 100 weight parts of epoxy resin, is 0.5～20 weight part.

26. application as claimed in claim 16, it further contains mineral filler.

27. application as claimed in claim 26, wherein, said mineral filler is at least a material that is selected from the group of being made up of glass, silicon-dioxide, aluminum oxide, titanium oxide, Natural manganese dioxide, carbon black, mica and permanent white.

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