CN101819932A - Graph transfer printing method - Google Patents
Graph transfer printing method Download PDFInfo
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- CN101819932A CN101819932A CN200910046712A CN200910046712A CN101819932A CN 101819932 A CN101819932 A CN 101819932A CN 200910046712 A CN200910046712 A CN 200910046712A CN 200910046712 A CN200910046712 A CN 200910046712A CN 101819932 A CN101819932 A CN 101819932A
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Abstract
The invention discloses a graph transfer printing method which adopts etching gas of which the ratio of fluorine to carbon rises with time to etch the part not shaded by a photoresist material on a pair wafer. The scheme of the invention can produce enough polymers in the initial stage of etching to protect the side wall of the wafer graph, and can clear excessive polymer in time in the later stage of etching so as to avoid producing irregular stripes on the side wall of the graph.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, particularly graph transfer printing method relates in particular to a kind of method of controlling the figure critical dimension and suppressing random stripe in the graph transfer printing step.
Background technology
In the manufacture process of semiconductor integrated circuit, often need on wafer, define the figure of superfine micro-dimension, the main generation type of these figures, be that the photoresistance graph transfer printing that little movie queen produced by optical lithography is to photoresist wafer down, with the complicated architectures of formation semiconductor integrated circuit.
Along with the size of logical device on the semiconductor integrated circuit narrows down to 65 nanometers and following, require to become more harsh for the control of device critical dimension.Etching process comprises isotropic etching and non-isotropic etching.Fig. 1 is the etched etching direction of a non-isotropic schematic diagram, and Fig. 2 is the etched etching direction of an isotropic schematic diagram.Part is represented photoresist shown in the oblique line striped among Fig. 1 and Fig. 2, and below the photoresist is crystal column surface, and arrow is represented the etching direction.In the non-isotropic etching, wafer only is subjected to the etching action of vertical direction, and the sidewall of figure can not be subjected to etching, so the critical dimension of the wafer figure of etching generation will be in strict accordance with the yardstick of photoresistance figure.And in the isotropic etching, the sidewall of wafer figure also can be subjected to etched effect.This shows that the isotropic etching is unfavorable for the critical dimension precision.Therefore must suppress the etched influence of isotropic as far as possible.
Main etching gas used in the etching is generally carbon tetrafluoride (CF
4).Wherein the effect of fluorine is and the silicon or the silicon dioxde reaction that constitute wafer, produces volatile product; The effect of carbon provides the source of polymer, suppresses etched carrying out.Polymer buildup can be used as protective layer on the sidewall of wafer figure, suppress the etched influence of isotropic.When the composition of fluorine increased, etch-rate increased; When the composition of carbon increased, etch-rate slowed down.By adjusting the fluorine and the carbon ratios of etching gas, can obtain suitable etch-rate.Therefore the etching gas that adopts usually is not pure carbon tetrafluoride, but the mixture of carbon tetrafluoride and tuning gas.Wherein the component of tuning gas can be C
4F
8, CHF
3, CH
2F
2, CH
3F, O
2Or its combination in any.Minor amounts of oxygen (O wherein
2) can with the carbon of carbon tetrafluoride reaction consumes part, make the fluorine carbon ratio increase, and the effect of other tuning gas all is that the fluorine carbon ratio is reduced to below 4.
In the graph transfer printing process of prior art, the component of etching gas is to keep constant.This has just caused following contradiction: need strengthen protection to the wafer pattern side wall at the etching initial stage, therefore need the fluorine carbon ratio of etching gas lower, suppress the etched influence of isotropic so that form enough polymer; In the etching later stage, the polymer of overheap can cause occurring irregular striped on the sidewall on the wafer pattern side wall, and this can cause the electrical properties variation of final products, reduces yields, therefore the etching gas that needs higher fluorine carbon ratio again is so that in time clear too much polymer.
Summary of the invention
In view of this, the present invention proposes a kind of graph transfer printing method, can effectively control the critical dimension of figure, and suppresses the appearance of random stripe.Described graph transfer printing method uses the part that etching gas that the fluorine carbon ratio raises is not in time blocked by photoresist on to wafer to carry out etching.
The etching gas that described use fluorine carbon ratio raises in time is being etched to the wafer under the photoresist: when etching is initial, feed the etching gas that component comprises carbon tetrafluoride and tuning gas in reative cell, the flow of described tuning gas is along with the time reduces.
The flow of described tuning gas is along with the time is reduced to: the initial flow of tuning gas is 10sccm to 200sccm, and linearity is reduced to 0 in time.
Described tuning gas is trifluoro hydrogenated carbon CHF
3, difluoro dihydro carbon CH
2F
2, fluorine three hydrogenated carbon CH
3The combination in any of F or above gas.
Preferably, contain oxygen in the described etching gas, and the flow of oxygen is along with the time raises.
As can be seen from the above technical solutions; use the part that etching gas that the fluorine carbon ratio raises is not in time blocked by photoresist on to wafer to carry out etching; both guaranteed that can produce enough polymer at the etching initial stage came the wafer pattern side wall is protected; can in time remove too much polymer in the etching later stage again, avoid the generation of random stripe on the pattern side wall.
Description of drawings
Fig. 1 is the etched etching direction of a non-isotropic schematic diagram;
Fig. 2 is the etched etching direction of an isotropic schematic diagram;
Fig. 3 is the flow chart of the graph transfer printing of the embodiment of the invention.
Embodiment
The graph transfer printing method that the embodiment of the invention proposes is; in the etching process of graph transfer printing; the linear component that changes at least a tuning gas in the etching gas; make the fluorine carbon ratio of etching gas constantly raise; so both guaranteed that can produce enough polymer at the etching initial stage came the wafer pattern side wall is protected; can in time remove too much polymer in the etching later stage again, avoid the generation of random stripe on the pattern side wall.
Graph transfer printing is to carry out in the plasma etching machine, and the plasma etching machine comprises a reative cell, vacuum system, gas supply device, supply unit composition.Wafer is admitted in the reative cell and by vacuum system chamber pressure is reduced.After vacuum is set up, in reative cell, feed etching gas.Supply unit excites etching gas and is plasmoid, and reative cell is placed the electric field environment of placing the plane perpendicular to wafer.At excited state, the silicon or the silicon dioxde reaction that are not blocked by photoresist on fluorine in the etching gas and the wafer generate volatile product and are got rid of by vacuum system.
The graph transfer printing method that the present invention adopts is exactly in said process, and the part that the etching gas that use fluorine carbon ratio raises is not in time blocked by photoresist on to wafer is carried out etching.
Only comprise trifluoro hydrogenated carbon (CHF with tuning gas
3) be example, the flow process of the graph transfer printing of the embodiment of the invention comprises the steps: as shown in Figure 3
Step 301: when etching is initial, in reative cell, feed the etching gas that component comprises carbon tetrafluoride and trifluoro hydrogenated carbon;
Step 302: in etching process, adjust the flow of described trifluoro hydrogenated carbon, make it along with the time reduces.
The initial flow of trifluoro hydrogenated carbon can be 10sccm to 200sccm, and linearity is reduced to 0 in time.From point of practical application, flow linear change in time is easy to realize relatively.But technical solution of the present invention is not limited to the flow linear change, and the version that adopts any dullness to reduce all is to realize the technology of the present invention effect.
Tuning gas is replaced to CH
2F
2, CH
3F, C
4F
8Or its combination in any, and make the flow of above-mentioned any gas in the tuning gas or its combination in any constantly reduce along with etched, can reach technique effect of the present invention equally; Corresponding, also can be that the linearity increase of main etching gas CF4 content also can reach same technique effect.Both guaranteed that can produce enough polymer at the etching initial stage came the wafer pattern side wall is protected, can in time remove too much polymer in the etching later stage again, avoided the generation of random stripe on the pattern side wall.
Because the effect of the minor amounts of oxygen that comprises in the etching gas is to improve the fluorine carbon ratio, therefore can be with making the method that oxygen flow raises in time in the etching gas improve the fluorine carbon ratio, thus realize the technology of the present invention effect.But note if the content of oxygen is when acquiring a certain degree, the concentration that the oxygen flow that raises again can dilute fluorine, thus reduce etching reaction speed, be unfavorable for removing too much polymer.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a graph transfer printing method is characterized in that, uses the part that etching gas that the fluorine carbon ratio raises is not in time blocked by photoresist on to wafer to carry out etching.
2. method according to claim 1, it is characterized in that, the etching gas that described use fluorine carbon ratio raises in time is being etched to the wafer under the photoresist: when etching is initial, feed the etching gas that component comprises carbon tetrafluoride and tuning gas in reative cell, the flow of described tuning gas is along with the time reduces.
3. method according to claim 2 is characterized in that, the flow of described tuning gas is along with the time is reduced to: the initial flow of tuning gas is 10sccm to 200sccm, and linearity is reduced to 0 in time.
4. method according to claim 3 is characterized in that, described tuning gas is trifluoro hydrogenated carbon CHF
3, difluoro dihydro carbon CH
2F
2, fluorine three hydrogenated carbon CH
3The combination in any of F or above gas.
5. according to each described method of claim 1 to 4, it is characterized in that, contain oxygen in the described etching gas, and the flow of oxygen is along with the time raises.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910046712A CN101819932A (en) | 2009-02-26 | 2009-02-26 | Graph transfer printing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910046712A CN101819932A (en) | 2009-02-26 | 2009-02-26 | Graph transfer printing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101819932A true CN101819932A (en) | 2010-09-01 |
Family
ID=42654965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910046712A Pending CN101819932A (en) | 2009-02-26 | 2009-02-26 | Graph transfer printing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101819932A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655283A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation etching method for shallow trench with high depth-to-width ratio |
-
2009
- 2009-02-26 CN CN200910046712A patent/CN101819932A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655283A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation etching method for shallow trench with high depth-to-width ratio |
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Open date: 20100901 |