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CN101814446B - Island expose and multi-salient-point island expose lead frame structure and carving and plating method thereof - Google Patents

Island expose and multi-salient-point island expose lead frame structure and carving and plating method thereof Download PDF

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CN101814446B
CN101814446B CN201010163629XA CN201010163629A CN101814446B CN 101814446 B CN101814446 B CN 101814446B CN 201010163629X A CN201010163629X A CN 201010163629XA CN 201010163629 A CN201010163629 A CN 201010163629A CN 101814446 B CN101814446 B CN 101814446B
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pin
dao
metal substrate
base island
back side
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CN101814446A (en
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王新潮
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Abstract

本发明涉及一种基岛露出及多凸点基岛露出引线框结构及其先刻后镀方法,包括基岛(1)和引脚(2),所述基岛(1)有二组,一组为第一基岛(1.1),另一组为第二基岛(1.2),所述第二基岛(1.2)正面设置成多凸点状结构,在所述基岛(1)和引脚(2)的正面和背面分别设置有第一金属层(4)和第二金属层(5),在所述引脚(2)外围的区域、基岛(1)与引脚(2)之间的区域、第一基岛(1.1)与第二基岛(1.2)之间的区域以及引脚(2)与引脚(2)之间的区域嵌置有无填料的塑封料(3),且使所述基岛和引脚背面尺寸小于基岛和引脚正面尺寸,形成上大下小的基岛和引脚结构。本发明的有益效果是:本发明塑封体与金属脚的束缚能力大。

Figure 201010163629

The invention relates to a base island exposed and multi-bump base island exposed lead frame structure and a method for engraving first and then plating, comprising a base island (1) and pins (2). The base island (1) has two groups, one One group is the first base island (1.1), and the other group is the second base island (1.2). The front and back of the pin (2) are respectively provided with a first metal layer (4) and a second metal layer (5), in the peripheral area of the pin (2), the base island (1) and the pin (2) The area between the first base island (1.1) and the second base island (1.2) and the area between the pins (2) and the pins (2) are embedded with filler-free molding compound (3 ), and make the size of the base island and the back side of the pin smaller than the size of the base island and the front side of the pin, forming a base island and pin structure with a large top and a small bottom. The beneficial effect of the invention is that: the invention has a large binding ability between the plastic package body and the metal feet.

Figure 201010163629

Description

基岛露出及多凸点基岛露出引线框结构及其先刻后镀方法Lead frame structure with base island exposed and multi-bump base island exposed lead frame and its method of engraving first and then plating

(一)技术领域(1) Technical field

本发明涉及一种基岛露出及多凸点基岛露出引线框结构及其先刻后镀方法。属于半导体封装技术领域。The invention relates to a base island exposed and multi-bump base island exposed lead frame structure and a method for engraving first and then plating. It belongs to the technical field of semiconductor packaging.

(二)背景技术(2) Background technology

传统引线框结构主要有二种:There are two main types of traditional lead frame structures:

第一种:The first:

采用金属基板的正面进行化学蚀刻及表面电镀层后,在金属基板的背面贴上一层耐高温的胶膜形成可以进行封装过程的引线框载体(如图14所示)。After chemical etching and surface electroplating are performed on the front of the metal substrate, a layer of high-temperature-resistant adhesive film is pasted on the back of the metal substrate to form a lead frame carrier that can be packaged (as shown in Figure 14).

第二种:The second type:

采用金属基板的正面进行化学蚀刻及表面电镀层后,即完成引线框的制作(如图15所示)。而引线框的背面则在封装过程中再进行背面蚀刻。After chemical etching and surface electroplating are performed on the front side of the metal substrate, the production of the lead frame is completed (as shown in FIG. 15 ). The backside of the lead frame is then etched during the packaging process.

而上述的二种引线框在封装过程中存在了以下的不足点:However, the above two lead frames have the following disadvantages in the packaging process:

第一种:The first:

1)此种的引线框架因背面必须要贴上一层昂贵可抗高温的胶膜。所以直接增加了高昂的成本。1) This kind of lead frame must be pasted with a layer of expensive and high temperature resistant adhesive film on the back. So directly increased the high cost.

2)也因为此种的引线框架的背面必须要贴上一层可抗高温的胶膜,所以在封装过程中的装片工艺只能使用导电或是不导电的树脂工艺,而完全不能采用共晶工艺以及软焊料的工艺进行装片,所以可选择的产品种类就有较大的局限性。2) Also because the back of this kind of lead frame must be affixed with a layer of high-temperature-resistant adhesive film, so the chip loading process in the packaging process can only use conductive or non-conductive resin technology, and can not be used at all. Chip-mounting process and soft solder process, so the types of products that can be selected are relatively limited.

3)又因为此种的引线框架的背面必须要贴上一层可抗高温的胶膜,而在封装过程中的球焊键合工艺中,因为此可抗高温的胶膜是软性材质,所以造成了球焊键合参数的不稳定,严重的影响了球焊的质量与产品可靠度的稳定性。3) Because the back of this kind of lead frame must be pasted with a layer of high-temperature-resistant adhesive film, and in the ball soldering bonding process in the packaging process, because the high-temperature-resistant adhesive film is a soft material, Therefore, the instability of ball bonding parameters is caused, which seriously affects the quality of ball bonding and the stability of product reliability.

4)再因为此种的引线框架的背面必须要贴上一层可抗高温的胶膜,而在封装过程中的塑封工艺过程,因为塑封的高压关系很容易造成引线框架与胶膜之间渗入塑封料,而将原本应属金属脚是导电的型态因为渗入了塑封料反而变成了绝缘脚(如图16所示)。4) Because the back of this kind of lead frame must be affixed with a layer of high temperature resistant adhesive film, and in the plastic sealing process during the packaging process, because of the high pressure of the plastic seal, it is easy to cause penetration between the lead frame and the adhesive film. Molding compound, and the originally conductive metal pin becomes an insulating pin due to infiltration of the molding compound (as shown in Figure 16).

第二种:The second type:

此种的引线框架结构在金属基板正面进行了半蚀刻工艺,虽然可以解决第一种引线框架的问题,但是因为只在金属基板正面进行了半蚀刻工作,而在塑封过程中塑封料只有包覆住半只脚的高度,所以塑封体与金属脚的束缚能力就变小了,如果塑封体贴片到PCB板上不是很好时,再进行返工重贴,就容易产生掉脚的问题(如图17所示)。This kind of lead frame structure has a half-etching process on the front of the metal substrate. Although it can solve the problem of the first lead frame, because only the half-etching work is performed on the front of the metal substrate, the plastic encapsulation compound only covers The height of half a foot is used, so the binding ability between the plastic package and the metal foot becomes smaller. If the plastic package is not attached to the PCB board very well, it is easy to cause the problem of foot drop (such as Figure 17).

尤其塑封料的种类是采用有填料时候,因为材料在生产过程的环境与后续表面贴装的应力变化关系,会造成金属与塑封料产生垂直型的裂缝,其特性是填料比例越高则越硬越脆越容易产生裂缝。Especially when the type of molding compound is filled, because the relationship between the environment of the material in the production process and the stress change of the subsequent surface mount will cause vertical cracks between the metal and the molding compound, the characteristic is that the higher the filler ratio, the harder it is The more brittle the easier it is to crack.

(三)发明内容(3) Contents of the invention

本发明的目的在于克服上述不足,提供一种降低封装成本、可选择的产品种类广、球焊的质量与产品可靠度的稳定性好、塑封体与金属脚的束缚能力大的基岛露出及多凸点基岛露出引线框结构及其先刻后镀方法。The object of the present invention is to overcome above-mentioned deficiency, provide a kind of package cost reduction, the product variety that can be selected is wide, the quality of ball welding and the stability of product reliability are good, the restraining ability of plastic package body and metal foot is big and the base island is exposed and The multi-bump base island exposes the lead frame structure and its engraving first and then plating method.

本发明的目的是这样实现的:一种基岛露出及多凸点基岛露出引线框结构,包括基岛和引脚,所述基岛有二组,一组为第一基岛,另一组为第二基岛,所述第二基岛正面设置成多凸点状结构,在所述基岛和引脚的正面和背面分别设置有第一金属层和第二金属层,在所述引脚外围的区域、基岛与引脚之间的区域、第一基岛与第二基岛之间的区域以及引脚与引脚之间的区域嵌置有无填料的塑封料,所述无填料的塑封料将引脚下部外围、第一基岛与第二基岛下部、基岛与引脚下部以及引脚与引脚下部连接成一体,且使所述基岛和引脚背面尺寸小于基岛和引脚正面尺寸,形成上大下小的基岛和引脚结构。The purpose of the present invention is achieved in this way: a base island exposed and a multi-bump base island exposed lead frame structure, including the base island and pins, the base island has two groups, one group is the first base island, the other The group is a second base island, the front of the second base island is arranged in a multi-bump structure, and a first metal layer and a second metal layer are respectively arranged on the front and back of the base island and pins, and the The area around the pin, the area between the base island and the pin, the area between the first base island and the second base island, and the area between the pin and the pin are embedded with plastic molding compound without filler, the said The filler-free molding compound connects the periphery of the lower part of the pin, the first base island and the lower part of the second base island, the base island and the lower part of the pin, and the pin and the lower part of the pin, and makes the dimensions of the base island and the back of the pin Smaller than the size of the base island and the front side of the pin, forming a base island and pin structure with a large top and a small bottom.

本发明基岛露出及多凸点基岛露出引线框先刻后镀生产方法,所述方法包括以下工艺步骤:The production method of base island exposure and multi-bump base island exposure lead frame of the present invention is engraved first and then plated, and the method includes the following process steps:

步骤一、取金属基板Step 1. Take the metal substrate

步骤二、贴膜作业Step 2, film pasting operation

利用贴膜设备在金属基板的正面及背面分别贴上可进行曝光显影的光刻胶膜,The photoresist film that can be exposed and developed is respectively pasted on the front and back of the metal substrate by using the film sticking equipment.

步骤三、金属基板正面去除部分光刻胶膜Step 3. Remove part of the photoresist film from the front of the metal substrate

利用曝光显影设备将步骤二完成贴膜作业的金属基板正面进行曝光显影去除部分光刻胶膜,以露出金属基板上后续需要进行半蚀刻的区域,Use the exposure and development equipment to expose and develop the front side of the metal substrate that has completed the film attachment operation in step 2 to remove part of the photoresist film, so as to expose the area on the metal substrate that needs to be half-etched later.

步骤四、金属基板正面半蚀刻Step 4. Half etching of the front side of the metal substrate

对步骤三中金属基板正面去除部分光刻胶膜的区域进行半蚀刻,在金属基板正面形成凹陷的半蚀刻区域,同时相对形成基岛和引脚,所述基岛有二组,一组为第一基岛,另一组为第二基岛,Perform half-etching on the area where part of the photoresist film is removed from the front of the metal substrate in step 3, form a recessed half-etched area on the front of the metal substrate, and simultaneously form base islands and pins relatively. There are two groups of base islands, one group is The first base island, the other group is the second base island,

步骤五、金属基板正背面揭膜作业Step 5. The front and back of the metal substrate are peeled off

将金属基板正面余下的光刻胶膜和背面的光刻胶膜揭除,Remove the remaining photoresist film on the front side of the metal substrate and the photoresist film on the back side,

步骤六、金属基板正面半蚀刻区域填涂无填料的软性填缝剂Step 6. Fill the semi-etched area on the front of the metal substrate with a soft sealant without filler

在步骤四金属基板正面形成凹陷的半蚀刻区域,填涂上无填料的软性填缝剂,并同时进行烘烤,促使无填料的软性填缝剂固化成无填料的塑封料,In step 4, a recessed half-etched area is formed on the front of the metal substrate, and a soft sealant without filler is applied, and baked at the same time, so that the soft sealant without filler is cured into a mold compound without filler,

步骤七、金属基板正背面贴膜作业Step 7. Laminating film on the front and back of the metal substrate

利用贴膜设备在已完成填涂无填料的软性填缝剂作业的金属基板的正面及背面分别贴上可进行曝光显影的光刻胶膜,Use the film sticking equipment to paste the photoresist film that can be exposed and developed on the front and back of the metal substrate that has been filled with soft gap filler without filler.

步骤八、去除部分光刻胶膜Step 8. Remove part of the photoresist film

在金属基板的正面及背面去除部分光刻胶膜,用意是露出第一基岛、第二基岛和引脚的背面以及第二基岛正面局部区域、第一基岛正面和引脚正面,Removing part of the photoresist film on the front and back of the metal substrate is intended to expose the back of the first base island, the second base island and the pins, as well as the partial area of the front of the second base island, the front of the first base island and the front of the pins,

步骤九、镀金属层Step 9, metallization layer

在步骤八露出的第一基岛、第二基岛和引脚的背面镀上第二金属层,在第二基岛正面局部区域、第一基岛正面和引脚正面镀上第一金属层,The second metal layer is plated on the back of the first base island, the second base island and the pins exposed in step 8, and the first metal layer is plated on the partial area of the front side of the second base island, the front side of the first base island and the front side of the pins ,

步骤十、去除金属基板背面部分光刻胶膜Step 10. Remove part of the photoresist film on the back of the metal substrate

去除金属基板背面部分光刻胶膜,以露出金属基板背面与所述不导电无填料的塑封料相对应的区域以及基岛正面未镀上第一金属层的区域,Removing part of the photoresist film on the back of the metal substrate to expose the area on the back of the metal substrate corresponding to the non-conductive and filler-free molding compound and the area on the front of the base island that is not coated with the first metal layer,

步骤十一、金属基板背面半蚀刻Step 11. Half etching on the back of the metal substrate

在金属基板的背面对不被光刻胶膜覆盖的区域的再次进行蚀刻工艺作业,将步骤四半蚀刻区域余下部分的金属全部蚀刻掉,同时对所述第二基岛正面进行半蚀刻工艺作业,使第二基岛正面蚀刻成多凸点状,且使所述基岛和引脚背面尺寸小于基岛和引脚正面尺寸,形成上大下小的基岛和引脚结构,On the back side of the metal substrate, the etching process is performed again on the area not covered by the photoresist film, all the metal in the remaining part of the half-etched area in step 4 is etched away, and at the same time, the half-etching process is performed on the front side of the second base island, The front side of the second base island is etched into a multi-bump shape, and the size of the base island and the back side of the pin is smaller than the size of the base island and the front side of the pin, forming a base island and pin structure with a large top and a small bottom,

步骤十二、金属基板正背面揭膜作业Step 12. The front and back of the metal substrate are peeled off

将金属基板正面和背面余下的光刻胶膜揭除。Peel off the remaining photoresist film on the front and back of the metal substrate.

本发明的有益效果是:The beneficial effects of the present invention are:

1)此种的引线框的背面不须要贴上一层昂贵可抗高温的胶膜。所以直接降低了高昂的成本。1) There is no need to paste a layer of expensive and high temperature resistant adhesive film on the back of this kind of lead frame. Therefore, the high cost is directly reduced.

2)也因为此种的引线框架的背面不须要贴上一层可抗高温的胶膜,所以在封装过程中的装片工艺除了能使用导电或是不导电的树脂工艺外,还能采用共晶工艺以及软焊料的工艺进行装片,所以可选择的产品种类就广。2) Also because the back of this kind of lead frame does not need to be pasted with a layer of high temperature resistant adhesive film, so in addition to using conductive or non-conductive resin technology, the chip loading process in the packaging process can also use a common Chip-mounting process and soft solder process, so there are a wide range of products to choose from.

3)又因为此种的引线框架的背面不须要贴上一层可抗高温的胶膜,确保了球焊键合参数的稳定性,保证了球焊的质量与产品可靠度的稳定性。3) Because the back of the lead frame does not need to be pasted with a layer of high-temperature-resistant adhesive film, the stability of the ball bonding parameters is ensured, and the quality of the ball bonding and the stability of product reliability are guaranteed.

4)再因为此种的引线框架不须要贴上一层可抗高温的胶膜,而在封装过程中的塑封工艺过程,完全不会造成引线框与胶膜之间渗入塑封料。4) Furthermore, because this kind of lead frame does not need to be pasted with a layer of high-temperature-resistant adhesive film, the plastic sealing process in the packaging process will not cause the plastic sealing compound to penetrate between the lead frame and the adhesive film at all.

5)由于在所述金属脚(引脚)与金属脚间的区域嵌置有无填料的软性填缝剂,该无填料的软性填缝剂与在塑封过程中的常规有填料塑封料一起包覆住整个金属脚的高度,所以塑封体与金属脚的束缚能力就变大了,不会再有产生掉脚的问题。5) Since there is no filler soft sealant embedded in the area between the metal feet (pins) and the metal feet, the filler-free soft sealant is different from the conventional filler molding compound in the molding process. Cover the entire height of the metal feet together, so the binding capacity between the plastic package and the metal feet becomes larger, and there will be no more problems of falling feet.

6)由于采用了正面与背面分开蚀刻作业的方法,所以在蚀刻作业中可形成背面基岛的尺寸稍小而正面基岛尺寸稍大的结构,而同个基岛的上下大小不同尺寸在被无填料的塑封料所包覆的更紧更不容易产生滑动而掉脚。6) Due to the method of separate etching operations on the front and back, a structure in which the size of the back base island is slightly smaller and the size of the front base island is slightly larger can be formed during the etching operation, and the upper and lower sizes of the same base island are different in size The non-filler plastic encapsulation is tighter and less likely to slip and fall off.

7)多凸点的金属基岛可以将金属基岛的热态膨胀热应力以及冷态收缩应力分散到每一个凸点上,直接降低了整块的金属基岛与芯片之间不同的膨胀系数与收缩率不同所产生的应力变形,进而造成封装后的可靠性伤害问题。7) The multi-bump metal base island can disperse the thermal expansion thermal stress and cold contraction stress of the metal base island to each bump, directly reducing the different expansion coefficients between the entire metal base island and the chip The stress deformation caused by the difference from the shrinkage rate will cause reliability damage after packaging.

(四)附图说明(4) Description of drawings

图1~12为本发明基岛露出及多凸点基岛露出引线框先刻后镀生产方法各工序示意图。1 to 12 are schematic diagrams of each process of the production method of the exposed base island and the multi-bump base island exposed lead frame of the present invention, which is engraved first and then plated.

图13为本发明基岛露出及多凸点基岛露出引线框结构示意图。FIG. 13 is a schematic diagram of the structure of the lead frame with exposed base islands and exposed multi-bump base islands according to the present invention.

图14为以往在金属基板的背面贴上一层耐高温的胶膜图作业。Figure 14 is a picture of pasting a layer of high temperature resistant adhesive film on the back of the metal substrate in the past.

图15为以往采用金属基板的正面进行化学蚀刻及表面电镀层作业图。Fig. 15 is a working diagram of chemical etching and surface electroplating on the front side of a metal substrate in the past.

图16为以往形成绝缘脚示意图。FIG. 16 is a schematic diagram of forming insulating feet in the past.

图17为以往形成的掉脚图。Fig. 17 is a diagram of a footfall formed in the past.

图中附图标记:Reference signs in the figure:

基岛1、第一基岛1.1、第二基岛1.2、引脚2、无填料的塑封料3、第一金属层4、第二金属层5、金属基板6、光刻胶膜7和8、半蚀刻区域9、光刻胶膜10和11。Base island 1, first base island 1.1, second base island 1.2, pins 2, molding compound without filler 3, first metal layer 4, second metal layer 5, metal substrate 6, photoresist films 7 and 8 , half-etched region 9, photoresist films 10 and 11.

(五)具体实施方式(5) Specific implementation methods

本发明基岛露出及多凸点基岛露出引线框先刻后镀生产方法如下:The production method of base island exposure and multi-bump base island exposure lead frame of the present invention is engraved first and then plated as follows:

步骤一、取金属基板Step 1. Take the metal substrate

参见图1,取一片厚度合适的金属基板6。金属基板6的材质可以依据芯片的功能与特性进行变换,例如:铜、铝、铁、铜合金或镍铁合金等。Referring to FIG. 1 , take a metal substrate 6 with an appropriate thickness. The material of the metal substrate 6 can be changed according to the functions and characteristics of the chip, such as copper, aluminum, iron, copper alloy or nickel-iron alloy.

步骤二、贴膜作业Step 2, film pasting operation

参见图2,利用贴膜设备在金属基板的正面及背面分别贴上可进行曝光显影的光刻胶膜7和8,以保护后续的蚀刻工艺作业。Referring to FIG. 2 , the photoresist films 7 and 8 that can be exposed and developed are respectively pasted on the front and back of the metal substrate by using the film sticking equipment to protect the subsequent etching process.

步骤三、金属基板正面去除部分光刻胶膜Step 3. Remove part of the photoresist film from the front of the metal substrate

参见图3,利用曝光显影设备将步骤二完成贴膜作业的金属基板正面进行曝光显影去除部分光刻胶膜,以露出金属基板上后续需要进行半蚀刻的区域。Referring to FIG. 3 , use exposure and development equipment to expose and develop the front of the metal substrate that has completed the film attachment operation in step 2 to remove part of the photoresist film, so as to expose the area on the metal substrate that needs to be half-etched later.

步骤四、金属基板正面半蚀刻Step 4. Half etching of the front side of the metal substrate

参见图4,对步骤三中金属基板正面去除部分光刻胶膜的区域进行半蚀刻,在金属基板正面形成凹陷的半蚀刻区域9,同时相对形成基岛1和引脚2,其用意主要是避免在后续作业中出现溢胶。所述基岛1有二组,一组为第一基岛1.1,另一组为第二基岛1.2。Referring to Figure 4, perform half-etching on the area where part of the photoresist film is removed from the front of the metal substrate in step 3, forming a recessed half-etching area 9 on the front of the metal substrate, and at the same time relatively forming the base island 1 and pin 2, the main purpose of which is to Avoid glue overflow in subsequent operations. The base island 1 has two groups, one is the first base island 1.1, and the other is the second base island 1.2.

步骤五、金属基板正背面揭膜作业Step 5. The front and back of the metal substrate are peeled off

参见图5,将金属基板正面余下的光刻胶膜和背面的光刻胶膜揭除。Referring to FIG. 5 , the remaining photoresist film on the front side and the photoresist film on the back side of the metal substrate are removed.

步骤六、金属基板正面半蚀刻区域填涂无填料的软性填缝剂Step 6. Fill the semi-etched area on the front of the metal substrate with a soft sealant without filler

参见图6,在步骤四金属基板正面形成凹陷的半蚀刻区域9,填涂上无填料的软性填缝剂,并同时进行烘烤,促使无填料的软性填缝剂固化成无填料的塑封料3。Referring to Figure 6, a recessed half-etched area 9 is formed on the front side of the metal substrate in Step 4, filled with a soft filler-free sealant, and baked at the same time to promote the soft filler-free sealant to solidify into a filler-free sealant. Plastic compound 3.

步骤七、金属基板正背面贴膜作业Step 7. Laminating film on the front and back of the metal substrate

参见图7,利用贴膜设备在已完成填涂无填料的软性填缝剂作业的金属基板的正面及背面分别贴上可进行曝光显影的光刻胶膜10和11,以保护后续的镀金属层工艺作业。Referring to Fig. 7, use film sticking equipment to stick photoresist films 10 and 11 that can be exposed and developed on the front and back of the metal substrate that has been filled with soft gap filler without filler, so as to protect the subsequent metal plating. layer craft work.

步骤八、去除部分光刻胶膜Step 8. Remove part of the photoresist film

参见图8,在金属基板的正面及背面去除部分光刻胶膜,用意是露出第一基岛、第二基岛和引脚的背面以及第二基岛正面局部区域、第一基岛正面和引脚正面,Referring to Figure 8, part of the photoresist film is removed on the front and back of the metal substrate, the intention is to expose the back of the first base island, the second base island and the pins, as well as the partial area of the front of the second base island, the front of the first base island and the front of the first base island. pin front,

步骤九、镀金属层Step 9, metallization layer

参见图9,在步骤八露出的第一基岛、第二基岛和引脚的背面镀上第二金属层5,在第二基岛正面局部区域、第一基岛正面和引脚正面镀上第一金属层4,以利后续焊线时金属线与芯片区和打线内脚区之间能更加紧密、牢固的接合,同时增加在包封工艺中促使有填料的塑封料间的结合度。而金属层的成分会因不同的芯片材质可以是采用金镍金、金镍铜镍金、镍钯金、金镍钯金、镍金、银或锡等。Referring to Fig. 9, the second metal layer 5 is plated on the back side of the first base island, the second base island and the pin exposed in step 8, and the second metal layer 5 is plated on the front side of the second base island, the front side of the first base island and the front side of the pin. Put on the first metal layer 4, so as to facilitate the tighter and firmer bonding between the metal wire and the chip area and the inner pin area of the wire during subsequent wire bonding, and at the same time increase the bonding between the plastic encapsulant with fillers in the encapsulation process Spend. The composition of the metal layer may be gold-nickel-gold, gold-nickel-copper-nickel-gold, nickel-palladium-gold, gold-nickel-palladium-gold, nickel-gold, silver or tin, etc. depending on the chip material.

步骤十、去除金属基板背面部分光刻胶膜Step 10. Remove part of the photoresist film on the back of the metal substrate

参见图10,去除金属基板背面部分光刻胶膜,以露出金属基板背面与所述无填料的塑封料相对应的区域以及基岛正面未镀上第一金属层的区域。Referring to FIG. 10 , part of the photoresist film on the back of the metal substrate is removed to expose the area on the back of the metal substrate corresponding to the filler-free molding compound and the area on the front of the base island that is not coated with the first metal layer.

步骤十一、金属基板背面半蚀刻Step 11. Half etching on the back of the metal substrate

参见图11,在金属基板的背面对不被光刻胶膜覆盖的区域的再次进行蚀刻工艺作业,将步骤四半蚀刻区域余下部分的金属全部蚀刻掉,同时对所述第二基岛正面进行半蚀刻工艺作业,使第二基岛正面蚀刻成多凸点状,且使所述基岛和引脚背面尺寸小于基岛和引脚正面尺寸,形成上大下小的基岛和引脚结构。Referring to FIG. 11 , the etching process is performed again on the area not covered by the photoresist film on the back side of the metal substrate, and all the metal in the remaining part of the half-etched area in step 4 is etched away, and at the same time, the half-etched area is etched on the front side of the second base island. The etching process makes the front of the second base island etched into a multi-bump shape, and makes the size of the base island and the back of the pins smaller than the size of the base island and the front of the pins, forming a base island and pin structure with a large top and a small bottom.

步骤十二、金属基板正背面揭膜作业Step 12. The front and back of the metal substrate are peeled off

参见图12,将金属基板正面和背面余下的光刻胶膜揭除。Referring to FIG. 12 , the remaining photoresist film on the front and back of the metal substrate is peeled off.

最后成品参见图13:图13中,基岛1、引脚2、无填料的塑封料3、第一金属层4和第二金属层5,由图13可以看出,本发明基岛露出及多凸点基岛露出引线框结构,包括基岛1和引脚2,所述基岛1有二组,一组为第一基岛1.1,另一组为第二基岛1.2,所述第二基岛1.2正面设置成多凸点状结构,在所述基岛1和引脚2的正面和背面分别设置有第一金属层4和第二金属层5,在所述引脚2外围的区域、基岛1与引脚2之间的区域第一基岛1.1与第二基岛1.2之间的区域以及引脚2与引脚2之间的区域嵌置有无填料的塑封料3,所述无填料的塑封料3将引脚下部外围、第一基岛1.1与第二基岛1.2下部、基岛1与引脚2下部以及引脚2与引脚2下部连接成一体,且使所述基岛和引脚背面尺寸小于基岛和引脚正面尺寸,形成上大下小的基岛和引脚结构。The final product is shown in Fig. 13: in Fig. 13, base island 1, pin 2, plastic encapsulant 3 without filler, first metal layer 4 and second metal layer 5, as can be seen from Fig. 13, the base island of the present invention is exposed and The multi-bump base island exposes the lead frame structure, including the base island 1 and pins 2. The base island 1 has two groups, one group is the first base island 1.1, and the other group is the second base island 1.2. The front side of the base island 1.2 is arranged in a multi-bump-like structure, and a first metal layer 4 and a second metal layer 5 are respectively arranged on the front and back sides of the base island 1 and the pin 2, and on the periphery of the pin 2 The area, the area between the base island 1 and the pin 2, the area between the first base island 1.1 and the second base island 1.2 and the area between the pin 2 and the pin 2 are embedded with a plastic encapsulant 3 without filler, The filler-free molding compound 3 connects the periphery of the lower part of the pin, the lower part of the first base island 1.1 and the second base island 1.2, the lower part of the base island 1 and the pin 2, and the lower part of the pin 2 and the pin 2, and makes the The size of the base island and the back side of the pins is smaller than the size of the base island and the front side of the pins, forming a base island and pin structure with a large top and a small bottom.

Claims (2)

1. sinking Ji Dao and multi-convex point base island lead frame structure, comprise Ji Dao (1) and pin (2), it is characterized in that: described Ji Dao (1) has two groups, one group is first Ji Dao (1.1), another group is second Ji Dao (1.2), described first Ji Dao (1.1) front middle section sinks, second Ji Dao (1.2) is arranged to multi-convex point shape structure in the front, front at described second Ji Dao (1.2) and pin (2) is provided with the first metal layer (4), at described first Ji Dao (1.1), the back side of second Ji Dao (1.2) and pin (2) is provided with second metal level (5), in pin (2) periphery, zone between pin (2) and first Ji Dao (1.1), zone between first Ji Dao (1.1) and second Ji Dao (1.2), zone between zone between second Ji Dao (1.2) and the pin (2) and pin (2) and the pin (2) is equipped with packless plastic packaging material (3), described packless plastic packaging material (3) is with pin (2) periphery, bottom, pin (2) and first Ji Dao (1.1) bottom, first Ji Dao (1.1) and second Ji Dao (1.2) bottom, second Ji Dao (1.2) links into an integrated entity with pin (2) bottom with pin (2) bottom and pin (2), and make described Ji Dao (1) and pin (2) back side size less than Ji Dao (1) and the positive size of pin (2), form up big and down small Ji Dao and pin configuration.
2. the first-engraving last-plating method of sinking Ji Dao as claimed in claim 1 and multi-convex point base island lead frame structure is characterized in that described method comprises following processing step:
Step 1, get metal substrate
Step 2, pad pasting operation
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of metal substrate,
Step 3, the positive part photoresist film of removing of metal substrate
The metal substrate front that utilizes exposure imaging equipment that step 2 is finished the pad pasting operation is carried out exposure imaging and is removed the part photoresist film, exposing the zone that follow-up needs etch partially on the metal substrate,
Step 4, metal substrate front etch partially
The positive zone of removing the part photoresist film of metal substrate in the step 3 is etched partially,, form Ji Dao and pin simultaneously relatively in the positive half-etched regions that forms depression of metal substrate, described Ji Dao has two groups, one group is first Ji Dao, and another group is second Ji Dao
The film operation is taken off at step 5, the positive back side of metal substrate
The positive remaining photoresist film of metal substrate and the photoresist film at the back side are removed,
Step 6, the packless soft gap filler of the positive half-etched regions full-filling of metal substrate
In the positive half-etched regions that forms depression of step 4 metal substrate, packless soft gap filler in the full-filling, and toast simultaneously, impel packless soft underfill cures to become packless plastic packaging material,
Step 7, the pad pasting operation of the positive back side of metal substrate
Utilize film sticking equipment to stick the photoresist film that can carry out exposure imaging respectively at the front and the back side of the metal substrate of finishing the packless soft gap filler operation of full-filling,
Step 8, removal part photoresist film
In the front of metal substrate and the back side remove the part photoresist film, purpose is to expose the back side of Ji Dao and pin and the front of the second basic island front regional area and pin,
Step 9, metal cladding
The Ji Dao that exposes in step 8 and the back side of pin plate second metal level, plate the first metal layer in the front of the second basic island front regional area and pin,
Step 10, removal metal substrate back portion photoresist film
Remove metal substrate back portion photoresist film, with zone between the zone between zone, first Ji Dao and the second basic island of the zone between the zone, first Ji Dao and the pin that expose pin periphery, the metal substrate back side, the positive central authorities in the first basic island, zone, second Ji Dao and the pin that front, the second basic island does not plate the first metal layer and the zone between pin and the pin
Step 11, the metal substrate back side etch partially
The etch process operation is carried out once more to the zone that is not covered by photoresist film in the back side at metal substrate, the metal of step 4 half-etched regions remaining part is all etched away, front to described first Ji Dao and second Ji Dao etches partially simultaneously, front, first basic island middle section is sunk, make the second basic island front-side etch become the multi-convex point shape, and make described Ji Dao and pin back side size less than Ji Dao and the positive size of pin, form up big and down small Ji Dao and pin configuration
The film operation is taken off at step 12, the positive back side of metal substrate
The photoresist film of metal substrate front and back remainder is removed.
CN201010163629XA 2010-04-28 2010-04-28 Island expose and multi-salient-point island expose lead frame structure and carving and plating method thereof Active CN101814446B (en)

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CN102315191A (en) * 2011-09-13 2012-01-11 江苏长电科技股份有限公司 Novel base-island prepacked plastic packaging material lead frame structure
CN103681581B (en) * 2013-12-05 2016-04-27 江苏长电科技股份有限公司 Once after first erosion, plating frame subtraction buries the flat leg structure of flip-chip and process
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CN103646938B (en) * 2013-12-05 2016-02-24 江苏长电科技股份有限公司 Once first plate and lose metal frame subtraction afterwards and bury flip-chip bump structure and process
CN103681580B (en) * 2013-12-05 2016-07-06 江苏长电科技股份有限公司 Etching-prior-to-plametal metal frame subtraction imbedded chip flipchip bump structure and process
CN103646930B (en) * 2013-12-05 2016-02-24 江苏长电科技股份有限公司 Secondary etching-prior-to-plametal metal frame subtraction buries the flat leg structure of flip-chip and process
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