CN101458963B - E2prom脱机复制方法 - Google Patents
E2prom脱机复制方法 Download PDFInfo
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- CN101458963B CN101458963B CN2007101722414A CN200710172241A CN101458963B CN 101458963 B CN101458963 B CN 101458963B CN 2007101722414 A CN2007101722414 A CN 2007101722414A CN 200710172241 A CN200710172241 A CN 200710172241A CN 101458963 B CN101458963 B CN 101458963B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000013524 data verification Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000010076 replication Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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Abstract
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101722414A CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101722414A CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101458963A CN101458963A (zh) | 2009-06-17 |
| CN101458963B true CN101458963B (zh) | 2011-03-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101722414A Expired - Fee Related CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
Country Status (1)
| Country | Link |
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| CN (1) | CN101458963B (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031758A (en) * | 1996-02-29 | 2000-02-29 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
| US6128694A (en) * | 1998-03-10 | 2000-10-03 | Dell Usa, L.P. | Method of correcting identification data stored in an EEPROM |
| CN2501159Y (zh) * | 2001-07-16 | 2002-07-17 | 青岛海信电器股份有限公司 | 串行电可擦可编程只读存储器的复制器 |
| CN1624665A (zh) * | 2003-12-02 | 2005-06-08 | 深圳创维-Rgb电子有限公司 | 一种烧写e2prom的方法和装置 |
-
2007
- 2007-12-13 CN CN2007101722414A patent/CN101458963B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031758A (en) * | 1996-02-29 | 2000-02-29 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
| US6128694A (en) * | 1998-03-10 | 2000-10-03 | Dell Usa, L.P. | Method of correcting identification data stored in an EEPROM |
| CN2501159Y (zh) * | 2001-07-16 | 2002-07-17 | 青岛海信电器股份有限公司 | 串行电可擦可编程只读存储器的复制器 |
| CN1624665A (zh) * | 2003-12-02 | 2005-06-08 | 深圳创维-Rgb电子有限公司 | 一种烧写e2prom的方法和装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101458963A (zh) | 2009-06-17 |
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| PB01 | Publication | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: INESA ELECTRON CO., LTD. Free format text: FORMER OWNER: SHANGHAI MATSUSHITA PLASMA DISPLAY CO., LTD. Effective date: 20130608 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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| TR01 | Transfer of patent right |
Effective date of registration: 20130608 Address after: 201203 Building 1, building 200, Zhang Heng Road, Zhangjiang hi tech park, Shanghai, Pudong New Area, 2 Patentee after: INESA ELECTRON Co.,Ltd. Address before: 201206 Shanghai city Pudong New Area Jinsui Road No. 1398 Patentee before: SHANGHAI MATSUSHITA PLASMA DISPLAY Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110330 |