CN101401213B - Field effect transistor using oxide film for channel and method of manufacturing the same - Google Patents
Field effect transistor using oxide film for channel and method of manufacturing the same Download PDFInfo
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- CN101401213B CN101401213B CN2007800091475A CN200780009147A CN101401213B CN 101401213 B CN101401213 B CN 101401213B CN 2007800091475 A CN2007800091475 A CN 2007800091475A CN 200780009147 A CN200780009147 A CN 200780009147A CN 101401213 B CN101401213 B CN 101401213B
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- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
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- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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Abstract
本发明提供一种包括作为半导体层的氧化物膜的场效应晶体管，其中所述氧化物膜包括添加有氢和氘之一的源极部分和漏极部分之一。
The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source portion and a drain portion to which one of hydrogen and deuterium is added.
Description
Technical field
The present invention relates to comprise the field-effect transistor as the oxidation film of semiconductor layer, the method for making it and display unit.The present invention be more particularly directed to have field-effect transistor, the method for making it and the display unit of the transistor characteristic that can be applied to display unit etc.
Background technology
Field-effect transistor (FET) is three arrangements of terminals with gate electrode, source electrode and drain electrode.And field-effect transistor is wherein to come control flows to cross the electronics active device of the electric current of channel layer (electric current between source electrode and the drain electrode) by the voltage that is applied to gate electrode.Especially, use film as the FET of channel layer be known as film F ET (thin-film transistor, TFT).Can on several substrates that form by pottery, glass or plastics etc., form described device.
Because above-mentioned TFT uses thin film technique, be easy to be formed on the advantage that has on the large-area relatively substrate so this TFT has, and be widely used in such as in the panel display apparatus of liquid crystal indicator as drive unit.More particularly, in active-matrix liquid crystal display (ALCD), the TFT that is formed on the glass substrate is used to open and close single image pixel.In high-performance organic LED display (OLED) in the future, also be considered to effective with the TFT current-driven pixel.And, realized more high performance liquid crystal indicator, wherein, near the TFT circuit that image display area, forms function on the substrate with driving and control entire image.
Current most popular TFT is to use polysilicon film or amorphous silicon film metal-insulator-semiconductor field effect transistor (MIS-FET) device as channel layer materials.In the practice non-crystalline silicon tft is used for pixel drive, and the drive controlling that high-performance polycrystal silicon TFT is used for entire image is gone up in practice.
Yet, be absolutely necessary because high-temperature process forms for device, so be difficult on such as the substrate of plastic plate or plastic film, form non-crystalline silicon tft and multi-crystal TFT.
In recent years, realize flexible (flexible) display, carried out positive exploitation for be formed on the drive circuit that is used for LCD or OLED such as the TFT on the substrate of polymer sheet or polymer film by use.Attentiveness concentrates on and can form at low temperatures, by on the organic semiconductor film that can be formed on the made on plastic film etc.
For example, research and develop pentacene (pentacene) and be used for organic semiconductor film.Described organic semiconductor has aromatic rings (aromatic ring).When crystallization, in the stacking direction of described aromatic rings, obtain big carrier mobility.For example, report is arranged: in the situation that pentacene is used for active layer, carrier mobility is approximately 0.5cm
2(Vs)
-1, this equals the carrier mobility of amorphous Si MOSFET.
Yet, have low thermal stability (when temperature surpassed 150 ℃, it was unsettled) and toxicity (carcinogenicity) such as the organic semiconductor of pentacene.Therefore, also do not realize actual device.
Recently attentiveness has concentrated on the oxide material as the material that can be applied to the TFT channel layer.
For example, used and comprised ZnO as the transparent conductive oxide polycrystal film of main component TFT as its channel layer at active development.Can form described film under the low temperature relatively, therefore might on such as the substrate of plastic plate or plastic film, form described film.Yet, in containing the situation of ZnO, can not at room temperature form stable amorphous phase, and form the polycrystalline phase as the compound of main component.Therefore, because the scattering on poly grains border is difficult to increase its electron mobility.In addition, because according to the film method of formationing and significantly change of poly grains shape and interconnection thereof, so be difficult to realize the reproducibility of the characteristic of TFT device.
People such as K.Nomura, Nature, 432,488 (2004) have reported the thin-film transistor based on the oxide of In-Ga-Zn-O that uses amorphous.Can at room temperature on plastic plate or glass substrate, form described thin-film transistor.Described device shows normally closed (normally-off) characteristic, has about field-effect mobility of 6 to 9.Also have following advantage: described thin-film transistor is transparent to visible light.
The present inventor after deliberation use the thin-film transistor of the oxide comprise amorphous In-Ga-Zn-O oxide.As a result, the situation that exists the transistor characteristic (Id-Vg characteristic) of TFT to change is although the degree that changes depends on channel material or creates conditions etc.
When TFT being used for the image element circuit of display for example, the variation of characteristic causes wanting the variation of the operation of driven organic LED or liquid crystal cell, thereby finally reduces the picture quality of display.
Summary of the invention
Consider above-mentioned situation, the objective of the invention is to reduce the variation of above-mentioned characteristic.
The example of the factor of described variation comprises:
1) dead resistance that causes between each in source electrode and drain electrode and the raceway groove; And
2) variation of position relation between grid, source electrode and the drain electrode.
Particularly, first purpose of the present invention is being connected between design each in transistorized raceway groove and its source electrode and drain electrode, thus the variation of minimizing characteristic.
Second purpose of the present invention provides and can be formed on the structure and the manufacture method thereof of the position relation between grid, source electrode and the drain electrode with high accuracy, thereby reduces the variation of characteristic.
The invention provides a kind of field-effect transistor, comprise the oxidation film as semiconductor layer, wherein said oxidation film comprises source electrode portion and drain portion/one who is added with one of hydrogen and deuterium (deuterium).
The present invention also provides a kind of field-effect transistor, comprises the oxidation film as semiconductor layer, and wherein said oxidation film comprises channel part, source electrode portion and drain electrode part; And the concentration of one of the hydrogen in described source electrode portion and the drain electrode part and deuterium is greater than the concentration of one of the hydrogen in the described channel part and deuterium.
Field-effect transistor according to the present invention is used to according to display unit of the present invention.
The present invention also provides and makes the method comprise as the field-effect transistor of the oxidation film of semiconductor layer, comprises step: form oxidation film on substrate; And add one of hydrogen and deuterium part to oxidation film, to form source electrode portion and drain electrode part.
And, the invention provides and make the method comprise as the field-effect transistor of the oxidation film of semiconductor layer, comprise step: on substrate, form oxidation film; On oxidation film, form gate electrode by gate insulating film; And use the pattern of gate electrode to add one of hydrogen and deuterium to oxidation film as mask, with pattern self aligned source electrode portion and the drain electrode part of formation in oxidation film with gate electrode.
The present invention also provides a kind of manufacturing to comprise method as the field-effect transistor of the oxidation film of semiconductor layer, described oxidation film comprises channel part, source electrode portion and drain electrode part, and described method comprises the steps: to form described oxidation film on substrate; And add one of hydrogen and deuterium to described oxidation film, so that the concentration of one of hydrogen and deuterium is greater than the concentration of one of hydrogen and deuterium in the described channel part in described source electrode portion and the drain electrode part.
The present invention also provides a kind of field-effect transistor, comprising: the oxide semiconductor layer that comprises channel region; Gate electrode; Gate insulator; Drain electrode; And source electrode, wherein said oxide semiconductor layer further comprises a pair of doped region of contiguous described source electrode or drain electrode, in the described doped region each has at least a in hydrogen and the deuterium, and in the wherein said doped region concentration of one of hydrogen and deuterium greater than the concentration of one of hydrogen and deuterium in the described channel region.
Description of drawings
Figure 1A and 1B are the viewgraph of cross-section that illustrates according to the configuration example of field-effect transistor of the present invention;
Fig. 2 illustrates the figure that hydrogen is added to the variation of its resistivity in the situation of amorphous In-Ga-Zn-O oxidation film;
Fig. 3 A and 3B illustrate to use the viewgraph of cross-section of Alignment Method manufacturing according to the method for field-effect transistor of the present invention;
Fig. 4 A, 4B, 4C and 4D illustrate the viewgraph of cross-section of manufacturing according to the method for field-effect transistor of the present invention;
Fig. 5 A and 5B are the viewgraph of cross-section that illustrates according to the configuration example of field-effect transistor of the present invention;
Fig. 6 is the viewgraph of cross-section that illustrates according to the configuration example of field-effect transistor of the present invention;
Fig. 7 A and 7B are the curve charts that illustrates according to the TFT characteristic of field-effect transistor of the present invention;
Fig. 8 A and 8B are the curve charts that hysteresis (hysteresis) characteristic according to field-effect transistor of the present invention is shown;
Fig. 9 is the curve chart that concerns between the partial pressure of oxygen during the conductivity of amorphous In-Ga-Zn-O oxidation film and film are shown form;
Figure 10 is the viewgraph of cross-section that the equipment that is used to form amorphous oxide film is shown;
Figure 11 is the viewgraph of cross-section that illustrates according to the example of display unit of the present invention;
Figure 12 is the viewgraph of cross-section that illustrates according to another example of display unit of the present invention; And
Figure 13 illustrates two-dimensional arrangement wherein each comprises the figure of structure of display unit of the pixel of organic El device and thin-film transistor.
Embodiment
Figure 1A and 1B illustrate the viewgraph of cross-section of the configuration example of field-effect transistor according to an embodiment of the invention.Figure 1A illustrates the example of top grid structure, and Figure 1B illustrates the bottom-gate example of structure.
In Figure 1A and 1B, on substrate 10, provide: channel layer (sull) 11, gate insulator 12, source electrode 13, drain electrode 14, gate electrode 15, source electrode portion 16, drain electrode part 17 and channel part 18.Channel layer 11 comprises source electrode portion 16, drain electrode part 17 and channel part 18.
As shown in Figure 1A, gate insulator 12 and gate electrode 15 are formed on the channel layer 11 with described order, thereby obtain the top grid structure.As shown in Figure 1B, gate insulator 12 and channel layer 11 are formed on the gate electrode 15 with described order, thereby obtain the bottom-gate structure.In Figure 1A, described source electrode portion and drain electrode part also are used separately as source electrode and drain electrode.In Figure 1B, transistorized channel part and source electrode (drain electrode) are connected to each other by source electrode portion (drain electrode part).
Shown among Figure 1A and the 1B each, in field-effect transistor (FET), comprise channel part 18, source electrode portion 16 and drain electrode part 17 as the sull of channel layer 11 according to this embodiment.Source electrode portion 16 and drain electrode part 17 have been added hydrogen or deuterium to reduce its resistivity.When channel part 18 comprises hydrogen or deuterium, the hydrogen or the concentration of deuterium of each in source electrode portion 16 and the drain electrode part 17 is made as value greater than the concentration of the hydrogen of channel part 18 or deuterium.Existence is initiatively added hydrogen or deuterium the situation of channel part 18 to, and hydrogen is included in the situation that does not wherein have initiatively to add hydrogen.As described later, can arrive the conductivity that source electrode portion (drain electrode part) increases source electrode portion (drain electrode part) by adding hydrogen or deuterium.In addition, when the concentration of the hydrogen of source electrode portion (drain electrode part) or deuterium is increased to value greater than the concentration of the hydrogen of channel part 18 or deuterium, the conductivity of source electrode portion (drain electrode part) can be made as value greater than the conductivity of channel part.According to described structure, can realize having the thin-film transistor of little variation thus with high reliability be electrically connected to each other channel part and source electrode (drain electrode) electrode.
Especially, according to this embodiment, source electrode portion and drain electrode part are formed in the oxidation film.Therefore, compare with the situation that drain electrode is formed directly into the traditional structure on the oxidation film, can make stable electrical connection with source electrode wherein.
In this embodiment, can use top grid structure, bottom-gate structure, staggered (staggered) structure or coplanar structure structure arbitrarily as field-effect transistor.Consider stable electrical connection, can use the coplanar structure shown in Figure 1A.When using coplanar structure, source electrode and drain electrode directly are connected with interface between gate insulator and the channel layer, and can obtain the electrical connection of high reliability.
Transistor according to this embodiment can have the structure that wherein is formed self-aligned gate electrode and source electrode (drain electrode) part.That is, as described later, the pattern by using gate electrode adds hydrogen to oxidation film, thereby forms in oxidation film about self aligned source electrode portion of the pattern of gate electrode and drain electrode part as mask.
When using Alignment Method, can realize that wherein source electrode (drain electrode) partly and the overlapping little and uniform transistor between the gate electrode.As a result, can reduce the transistorized parasitic capacitance that causes in the lap between gate electrode and drain portion are divided and make it even.Because little parasitic capacitance is so can realize high speed operation.Because uniform parasitic capacitance is so can realize the transistor of uniform properties excellence.
(source electrode portion and drain electrode part)
As previously mentioned, source electrode portion 16 and drain electrode part 17 have been added hydrogen or deuterium to reduce its resistivity.The present inventor finds: when adding hydrogen (or deuterium) to amorphous In-Ga-Zn-O film, it is big that the conductivity of sull becomes.Comprise in the situation of hydrogen or deuterium in channel part 18, the hydrogen or the deuterium concentration of each in source electrode portion and the drain electrode part are increased to greater than the hydrogen of channel part or the value of deuterium concentration, thereby can improve electrical connection.
Fig. 2 is the performance plot that the example that concerns between hydrogen ion injection rate and the resistivity is shown.Fig. 2 is illustrated in ion is injected the InGaZnO with about 500nm film thickness
4Conductivity is with respect to the variation of hydrogen ion injection rate in the situation of film.Abscissa (x axle) is that the logarithm of per unit area hydrogen ion injection rate is represented, represents and ordinate (y axle) is the logarithm of resistivity.Therefore, hydrogen can be added to amorphous oxide film with the control conductivity.
When adding hydrogen or deuterium to source electrode portion and drain portion timesharing, can increase its conductivity.When channel part comprised hydrogen or deuterium, the hydrogen concentration of each in source electrode portion and the drain electrode part was increased to the value greater than the hydrogen concentration of channel part.Therefore, each the conductivity in source electrode portion and the drain electrode part can be set as value greater than the conductivity of channel part.As mentioned above, in source electrode portion and drain electrode part each is by the material same basically with the material of channel part (except hydrogen concentration) when making, and can realize gratifying electrical connection the between each in channel part and source electrode and the drain electrode.That is, source electrode (drain electrode) electrode is connected with channel part by source electrode (drain electrode) part, thereby realizes gratifying electrical connection.
In this embodiment, can use less than any resistivity of the resistivity of channel part as each the resistivity in source electrode portion and the drain electrode part.The resistivity of each in source electrode portion and the drain electrode part can be equal to or less than 1/10 of channel part resistivity.When each the resistivity in source electrode portion and the drain electrode part become be equal to or less than channel part resistivity 1/1000 the time, can use described source electrode (drain electrode) partly as source electrode (drain electrode) electrode.
The variable quantity that resistivity changes with respect to hydrogen concentration depends on the component (composition) of oxidation film or its film quality or the like.For example, when with every volume about 10
17(1/cm
3) hydrogen ion inject when having the In-Ga-Zn-O film of about 1000 Ω cm, its resistivity can be reduced to several approximately 50 Ω cm.When injecting about 10
19(1/cm
3) hydrogen ion the time, resistivity can be reduced to about 0.5 Ω cm.The concentration range of the hydrogen of each in adding source electrode portion to and draining partly depends on the structure of oxidation film, but concentration can be equal to or greater than 10
17/ cm
3Especially, be equal to or greater than about 10 when setting
19/ cm
3Concentration the time, the conductivity of each in source electrode portion and the drain electrode part becomes bigger, thereby can be with source electrode portion and drain electrode part as source electrode and drain electrode.
As mentioned above, in some cases, depend on the film formation condition, oxidation film can comprise hydrogen and not have hydrogen initiatively to add.Therefore, exist channel part to comprise hydrogen and do not have initiatively to add the situation of hydrogen.Even in such circumstances, in order to form source electrode portion and drain electrode part, in reprocessing, add hydrogen, introducing source electrode portion and drain electrode part above the hydrogen amount of the hydrogen amount that comprises in the channel part.Therefore, can realize aforesaid structure and effect.
Also can adopt the local method that reduces the hydrogen amount in the part of oxidation film, to use described part as channel part.
Can use SIMS (secondary ion mass spectrometry, secondary ion massspectrometry) to assess hydrogen concentration by measuring.Depend on assessment apparatus, detectable limit is about 10
17/ cm
3By adding the extrapolation of the linear relationship between the hydrogen amount that comprises in processing parameter (partial pressure of oxygen or ion injection rate when film as described later forms) and the film based on hydrogen, can indirect calculation be equal to or less than the value of detectable limit.
In each of Figure 1A and 1B, form single source electrode portion and single drain electrode part.As shown in Figure 6, can provide a plurality of source electrode portion 16a and 16b and a plurality of drain electrode part 17a and 17b.Source electrode portion 16a has different conductivity with 16b.Drain electrode part 17a has different conductivity with 17b.Conductivity can increase according to the order of channel part 18, source electrode portion 16a and source electrode portion 16b.And conductivity can increase according to the order of channel part 18, drain electrode part 17a and drain electrode part 17b.In order to obtain such structure, only needing increases the hydrogen ion addition according to the order of channel part 18, source electrode portion 16a and source electrode portion 16b, and increases the hydrogen addition according to the order of channel part 18, drain electrode part 17a and drain electrode part 17b.
(channel layer; Oxidation film)
Can use as any material of oxide material as channel layer (oxidation film).Described examples of material comprises the In oxide and the Zn oxide that can obtain big mobility from it.And channel layer can be made by amorphous oxides.When following amorphous oxide film is added hydrogen, can effectively increase conductivity.
Especially, the composition of the channel layer made by amorphous oxides of following expression:
[(Sn
1-xM4
x)O
2]a·[(In
1-yM3
y)
2O
3]b·[(Zn
1-zM2
zO)]c
Wherein 0≤x≤1,0≤y≤1,0≤z≤1,0≤a≤1,0≤b≤1,0≤c≤1 and a+b+c=1, M4 is the VI family element (Si, Ge or Zr) that has less than the atomic number of Sn, M3 is Lu or has iii group element (B, Al, Ga or Y) less than the atomic number of In, and M2 is the II family element (Mg or Ca) that has less than the atomic number of Zn.
Especially, [(In
1-yGa
y)
2O
3] b[(ZnO)] c (wherein 0≤y≤1,0≤b≤1 and 0≤c≤1) and [SnO
2] a[(In
2O
3)] b[(ZnO)] c (wherein 0≤a≤1,0≤b≤1 and 0≤c≤1) is preferred.
For example, can on the summit SnO be set based on being positioned at wherein
2, In
2O
3Assign to realize amorphous oxide film with monobasic, binary or tlv triple in the leg-of-mutton interior zone of ZnO.The component ratio that depends on ternary component exists in the situation that crystallization takes place in the component ratio ranges.For example, about comprising two kinds the binary composition (being arranged in the component on leg-of-mutton limit) in three kinds of compounds as mentioned above, can form amorphous In-Zn-O film wherein to contain the component that is equal to or greater than about 80 atom % or more In, and can form amorphous Sn-In-O film with the component of the In that wherein contains the 80 atom % that have an appointment.
And amorphous oxides can comprise In, Ga and Zn.
The present inventor has studied the thin-film transistor that wherein amorphous oxides is applied to channel layer.Result as research finds: in order to obtain excellent TFT characteristic, the semi-insulating amorphous oxide film with 10S/cm or above and 0.0001S/cm or following conductivity can be applied to raceway groove.The material component that depends on raceway groove has about 10 in order to obtain described conductivity, can to form
14/ cm
3To 10
18/ cm
3The amorphous oxide film of electronic carrier concentration.
When conductivity is 10S/cm or when bigger, can not form normally closed transistor, and can not make that the ON/OFF ratio is big.In egregious cases, even apply grid voltage, the electric current between source electrode and the drain electrode is not switched on yet/cuts off, and does not observe the transistor operation.
On the other hand, in the situation of insulator, in other words, when conductivity is equal to or less than 0.0001S/cm, can not make conducting electric current (on-current) big.In egregious cases, even apply grid voltage, the electric current between source electrode and the drain electrode is not switched on yet/cuts off, and does not observe the transistor operation.
For example, the partial pressure of oxygen in the time of can forming film by control, control is used for the conductivity of the oxide of channel layer.More specifically, by the control partial pressure of oxygen, the amount of oxygen room (vacancy) in the major control film, thereby the concentration of control electronic carrier.Fig. 9 illustrates when forming the In-Ga-Zn-O sull by sputter conductivity to the exemplary dependent figure of partial pressure of oxygen.In fact, by highly controlling partial pressure of oxygen, can obtain semi-insulating film, it is for having 10
14To 10
18/ cm
3The amorphous oxide film of the semi-insulating character of electronic carrier concentration.By aforesaid film is used for channel layer, can form gratifying TFT.As shown in Figure 9, form film, can obtain semi-insulating film by partial pressure of oxygen with typical about 0.005Pa.When partial pressure of oxygen is 0.001Pa or more hour, formed film insulate, and when partial pressure of oxygen be 0.01Pa or when bigger, conductivity is that so high so that described film is inappropriate for transistorized channel layer.
Several amorphous oxide films that preparation forms under different partials pressure of oxygen, and compare their performance that transports.In film forms, adjust atmosphere with the electron transport performance of assessment when partial pressure of oxygen increases, have the trend that increases carrier concentration and electron mobility.Adopting hall mobility for described assessment measures.
In general semi-conductive situations such as Si, GaAs, ZnO, when carrier concentration increased, owing to the interaction between for example charge carrier and dopant, electron mobility reduced.On the other hand, in the situation of the amorphous oxide film that is used for this embodiment, electron mobility increases along with the increase of electronic carrier concentration.When applying voltage, electronics can be injected the channel layer of amorphous oxides to gate electrode.Therefore, electric current flows between source electrode and drain electrode, obtains conducting state between described two electrodes.In the situation of amorphous oxide film in this embodiment, when electronic carrier concentration increased, it is big that electron mobility becomes, thereby can make that to flow into the transistorized electric current that is in conducting state bigger.That is, can make saturation current and ON/OFF ratio bigger.
(gate insulator)
In the situation according to the field-effect transistor of this embodiment, any material with gratifying insulation property can be used to gate insulator 12.For example, Al
2O
3, Y
2O
3, HfO
2The mixing cpd that perhaps comprises in those compounds at least two can be used to gate insulator 12.Therefore, in the leakage current that flows between source electrode and the gate electrode and leakage current mobile between drain electrode and gate electrode each can be reduced to about 10
-7Ampere.
(electrode)
Have gratifying conductivity and can be used in source electrode 13, the drain electrode 14 each with any material that source electrode portion 16 and drain electrode part 17 are electrically connected.Any material also can be used to gate electrode 15.For example, can use by In
2O
3: nesa coating that Sn or ZnO etc. form or the metal film of forming by Au, Pt, Al or Ni etc.
When each when grid part and in draining partly has enough conductivity, can as shown in Figure 1A, omit electrode.
Each illustrates the configuration example that source electrode 13 and drain electrode 14 wherein are provided Figure 1B, 5A and 5B.In Fig. 5 A, insulating barrier 19 is provided on the structure shown in Figure 1A, and source electrode is connected with the drain electrode part with source electrode portion with drain electrode by path (via).
(substrate)
Can use glass substrate, plastic base or plastic film etc. as substrate 10.
Aforesaid channel layer and gate insulator are transparent to visible light.Therefore, when transparent material is used to electrode and substrate, can prepare the clear films transistor.
(TFT characteristic)
Field-effect transistor has three arrangements of terminals that comprise gate electrode 15, source electrode 13 and drain electrode 14.Field-effect transistor is to have the electronics active device that is used for controlling based on the voltage Vg that is applied to gate electrode the function of the electric current I d that flows into raceway groove.This makes it possible to be controlled at the electric current I d that flows between source electrode and the drain electrode.
Fig. 7 A and 7B illustrate the typical characteristics according to the field-effect transistor of this embodiment.When applying the voltage Vd of about 5V between source electrode and drain electrode, the grid voltage Vg that apply switches between 0V and 5V, can control the electric current I d (unit: μ A) that (connection/cut-out) flows between source electrode and drain electrode.Fig. 7 A is illustrated in the example of the Id-Vd characteristic at each Vg place, and Fig. 7 B is illustrated in the example of Id-Vg characteristic (transmission characteristic) at the Vd place of 6V.
(hysteresis)
To minimizing as the hysteresis of one of effect among this embodiment be described with reference to figure 8A and 8B.Hysteresis is meant: as shown in Figure 8A and 8B, in the situation of assessment TFT transmission characteristic, when inswept (swept) (rise and descend) Vg when keeping Vd, be different from the variation of Id value between the voltage decrement phase in the variation of voltage Id value between the rising stage.When hysteresis was big, the Id value that obtains at fixing (set) Vg place changed.Therefore, can use device with little hysteresis.
Fig. 8 A and 8B are illustrated in TFT transmission characteristic in the situation of traditional structure and the example of TFT transmission characteristic in the situation of the structure of this embodiment, in described traditional structure, source electrode and drain electrode are formed directly on the oxidation film, in the structure of this embodiment, source electrode portion and drain electrode part are provided, and each in described source electrode portion and the drain electrode part has high hydrogen concentration.Described traditional structure represents the hysteresis characteristic shown in Fig. 8 A.In contrast to this, when as further providing each source electrode portion that all is added with hydrogen and drain portion timesharing in this embodiment, can obtain to have the device of hysteresis little as shown in Fig. 8 B.
When connecting raceway groove and source electrode (drain electrode) electrode, can reduce the amount that is trapped in the electric charge in the coupling part and lag behind to reduce by source electrode (drain electrode) part that is added with hydrogen.
(manufacture method)
Can make above-mentioned field-effect transistor by following manufacture method.
That is, manufacture method comprises: form step as the oxidation film of channel layer, and add hydrogen to the part of oxidation film to form source electrode portion and drain electrode step partly.
Can make with the following method: be pre-formed oxidation film with the resistance value that is suitable for providing channel part, and add then hydrogen to the part of oxidation film to form source electrode portion and drain electrode part.
Scheme as an alternative can make with the following method: wherein, be pre-formed the oxidation film that has slightly less than the resistance value of the resistance value that is suitable for providing channel part, and the hydrogen concentration that reduces a part of oxidation film then is to form channel part.Because be easy to control hydrogen concentration, so the method for front is fit to.
Can use such as several deposition processs of sputtering method (SP method), pulse laser sediment method (PLD method) or electron beam deposition method as the method that forms oxidation film.Consider big production capacity, described SP method is fit to.Yet film formation method is not limited to those methods.Substrate temperature during film can being formed remains to and is essentially room temperature and not deliberately heating.
Can use such as hydrogen ion inject, hydrogen plasma is handled, nitrogen atmosphere is handled or from the method for contiguous hydrogeneous film diffusion as adding the method for hydrogen to oxidation film.In described method, consider hydrogen content control, ion injection method is fit to.Can use H
+Ion, H
-Ion, D
+Ion (deuterium ion) or H
2+Ions (hydrogen molecular ion) etc. are as the ionic species (species) of ion injection method.In contrast to this, consider output, hydrogen plasma is handled and is fit to.
For example, can use the plasma CVD apparatus of parallel plate type or the plasma etching equipment of RIE type to carry out the hydrogen plasma processing.
Then, the autoregistration of describing among this embodiment is handled.
In this method, in order to form source electrode portion and drain electrode part, use the pattern that is positioned at the gate electrode on the channel layer as mask, add hydrogen to oxidation film.According to described method, can be formed self-aligned source electrode portion and drain electrode part with gate electrode.
To handle about the autoregistration among this embodiment of the grid exemplary thin film transistors of top shown in Figure 1A with reference to figure 3A and 3B description.
At first, by being patterned in the oxidation film that forms on the substrate 10 as channel layer 11.Then, deposition gate insulator 12.Then, form gate electrode 15 by patterning.Add in the step at hydrogen, use gate electrode,, hydrogen is added in the oxidation film, thereby form source electrode portion 16 and drain electrode part 17 (Fig. 3 B) by such as the method that hydrogen ion injects or hydrogen plasma is handled as mask (Fig. 3 A).After that, can anneal so that the amount of hydrogen is even.
Therefore, can as mask the Alignment Method that hydrogen adds channel layer 11 to easily be prepared the coplane transistor by using gate electrode 15.
When using such method, can reduce overlapping between each in gate electrode and source electrode portion and the drain electrode partly.Because overlappingly work, so overlappingly forbidden transistorized high speed operation as capacitor (capacitor parasitics).Overlapping variation causes the variation of transistor characteristic.When using autoregistration to handle, can reduce the transistorized parasitic capacitance that in gate electrode and source electrode portion and drain electrode part, causes in the lap between each and make it even.As a result, might prepare and have high driving ability and excellent inhomogeneity transistor.
When using described method, can determine the position relation between grid, source electrode and the drain electrode automatically, and not have possibility to cause the mask alignment of error.Because the use Alignment Method, so high accuracy mask alignment is unnecessary.It also is unnecessary being used for allowing the mask alignment enough and to spare (margin) of the error that mask alignment causes, so can reduce device size.
Can in K cryogenic treatment, carry out described method, therefore can on substrate, form thin-film transistor such as plastic plate or plastic film.
According to this embodiment, can reduce the quantity of etch processes and peel off quantity that (lift-off) handle to form source electrode and drain electrode.Therefore, can realize that electrode-semiconductor connects with low-cost processes and excellent stability.
Can prepare display unit, wherein will be connected with electrode corresponding to the drain electrode of the lead-out terminal of field-effect transistor such as the display element of organic or inorganic electroluminescence (EL) element or liquid crystal cell.The configuration example of concrete display unit is described below with reference to the display unit viewgraph of cross-section.
For example, as shown in Figure 11, in substrate 111, form the field-effect transistor that comprises oxidation film (channel layer) 112, source electrode 113, drain electrode 114, gate insulating film 115 and gate electrode 116.Drain electrode 114 is connected to electrode 118 by interlayer dielectric 117.Electrode 118 contacts with luminescent layer 119.Luminescent layer 119 contacts with electrode 120.According to such structure, can be based on raceway groove value of current flowing between source electrode 113 and drain electrode 114 by in oxidation film 112, forming, the electric current of luminescent layer 119 is injected in control.Therefore, can be based on the voltage of the gate electrode 116 that is applied to field-effect transistor, the electric current of luminescent layer 119 is injected in control.Described electrode 118, luminescent layer 119 and electrode 120 are formed inorganic or organic electroluminescent device.
Scheme as an alternative, as shown in Figure 12, drain electrode 114 extends with same as electrode 118, thereby can provide drain electrode 114 wherein to be used as the structure of electrode 118, described electrode 118 is used to apply voltage to the liquid crystal cells or the electrophoretic particles unit 123 that are clipped between high resistance membrane 121 and 122.Liquid crystal cells or electrophoretic particles unit 123, high resistance membrane 121 and 122, electrode 118 and electrode 120 are formed display element.Can be applied to the voltage of display element based on the magnitude of voltage control of drain electrode 114.Therefore, can be applied to the voltage of display element based on the voltage control of the gate electrode 116 that is applied to TFT.When the display medium of display element was sealed in bladder (capsule) in the insulating coating for wherein fluid and particle, high resistance membrane 121 and 122 was unnecessary.
In two examples of above-mentioned field-effect transistor, typically shown top grid coplanar structure.Yet this embodiment is not necessarily limited to this structure.For example, (topologically) is identical on as the drain electrode of the lead-out terminal of field-effect transistor and the connection topology between the display element, can adopt another structure such as cross structure.
In described two examples, demonstrate wherein the example that is provided for driving the pair of electrodes of display element with substrate abreast.Yet this embodiment is not necessarily limited to such structure.For example, identical on as the drain electrode of the lead-out terminal of field-effect transistor and the connection topology between the display element, can provide any one or two electrodes in the described electrode perpendicular to substrate.
In described two examples, only shown a field-effect transistor that is connected with display element.Yet this embodiment is not necessarily limited to such structure.For example, according to this embodiment, the field-effect transistor that shows among the figure can be connected to another field-effect transistor.Only need provide the field-effect transistor shown in the figure in the last level of the circuit that comprises field-effect transistor.
Be provided for abreast driving in the situation of pair of electrodes of display element with substrate, when display element is an EL element or during such as the reflection display element of reflective liquid crystal element, radiative wavelength of any one electrode pair or catoptrical wavelength all must be transparent.Scheme as an alternative, in the situation such as the display unit of transmission-type liquid crystal element, the light of each electrode pair transmission must be transparent.
Also can make composition all is transparent according to all parts of the field-effect transistor of this embodiment, and the result can prepare transparent display element.Can in low heat-resisting (heat-resistance) substrate, provide such display element such as in light weight, flexible and transparent resin and plastic substrate.
Then, each comprises the display unit of the pixel of EL element (organic EL in this situation) and field-effect transistor will to describe wherein two-dimensional arrangement with reference to Figure 13.
In Figure 13, transistor 181 drives organic EL layer 184, and transistor 182 is selected pixel.Be used to keep selected state and capacitor 183 stored charges between the source electrode portion of public electrode wire 187 and transistor 182, be applied to the signal of the grid of transistor 181 with maintenance.Determine pixel selection by scanning electrode wire 185 and signal electrode line 186.
More specifically, from the drive circuit (not shown) picture signal is applied to gate electrode as pulse signal by scanning electrode wire 185.Simultaneously, by signal electrode line 186 pulse signal is applied to transistor 182, thereby selects pixel from another drive circuit (not shown).At this moment, transistor 182 is switched on, with charge storage in the capacitor 183 between the source electrode of signal electrode line 186 and transistor 182.Therefore, the grid voltage of transistor 181 is maintained at the voltage of expectation, thereby makes described transistor turns.Such state is held, up to receiving next signal.During the state that transistor 181 is switched on, it is luminous to keep that voltage and current is fed into organic EL layer 184 therein.
In the configuration example shown in Figure 13, each pixel comprises two transistors and a capacitor.In order to improve performance, can incorporate a large amount of transistor etc. into.Necessary is: can form at low temperature, be used to transistor part as In-Ga-Zn-O field-effect transistor according to the transparent field effect transistor of this embodiment.Therefore, obtain effective EL element.
Then, example of the present invention will be described with reference to the drawings.
(example 1)
In this example, made the top grid TFT device of the coplanar structure that has as shown in Figure 1A.
About manufacture method, the Alignment Method shown in Fig. 3 A and the 3B is applied to this example.
Amorphous In-Ga-Zn-O oxide is used for channel layer 11.Use the hydrogen ion method for implanting to form source electrode portion and drain electrode part.
At first, go up the amorphous oxide film that forms as channel layer 11 at glass substrate 10 (by Corning Incorporated, 1737 make).In this example, under the mixed atmosphere of argon gas and oxygen, form amorphous In-Zn-Ga-O oxidation film by radio frequency sputtering.
Use to be used for film formed sputtering equipment as shown in Figure 10, comprising: sample 51, target 52, vacuum pump 53, vacuum gauge 54, base plate keeping device 55, specific gas flow rate (flow rate) control device 56, pressure control device 57 and the film formation chamber 58 of providing for each gas drawing-in system.
Promptly, use is used for film formed described sputtering equipment, it comprises: film forms chamber 58, be used for vacuum pump 53 that the described film of emptying (evacuate) forms the chamber, be used for forming the chamber at described film keeps having formed the base plate keeping device 55 of substrate of oxidation film and the solid material source (target) 52 relative with base plate keeping device thereon, and further comprise: be used for energy source (radio-frequency power supply that does not illustrate), and be used for providing a supply of oxygen to the device that film forms the chamber from described solid material source evaporating materials.
Give the mist (Ar:O of argon, oxygen and argon and oxygen
2=80:20) provide three gas drawing-in systems.Utilization can independently be controlled the specific gas flow rate control device 56 of each specific gas flow rate and be used for the pressure control device 57 that (exhaust) speed is discharged in control, can form at film and obtain predetermined gas atmosphere in the chamber.
In this example, use has two inches size, has InGaO
3(ZnO) the polycrystalline agglomerated material of component is as target (material source), and the RF power that applies is 100W.The total pressure of the atmosphere when forming film is 0.5Pa, and wherein gas stream is Ar:O than (flow ratio)
2=100:1.It is 13nm/min that film forms speed, and substrate temperature is 25 ℃.
About the film that obtains, when carrying out glancing angle (glance angle) X-ray diffraction (film process, incidence angle are 0.5 degree) on the surface at film approx, do not detect clearly diffraction maximum, this shows that In-Zn-Ga-O film of making is an amorphous film.
Further, as the result of the pattern analysis that uses spectroscopic ellipsometry (spectroscopic ellipsometry), the r.m.s. roughness (Rrms) of finding film be about 0.5nm with and film thickness be about 60nm.As the result of XRF (XRF) spectrum, the component ratio of metal is In:Ga:Zn=38:37:25 in the film.
Conductivity is about 10
-2S/cm, electronic carrier concentration is 4 * 10
16/ cm
3, and the electron mobility of estimating is about 2cm
2/ Vsec.
From the optical absorption spectra analysis, the forbidden band energy width of the amorphous oxide film of manufacturing is about 3eV.
Then, use photoetching method and stripping means to form gate insulator 12 by patterning.By using the electron beam deposition method to form Y with the thickness of 150nm
2O
3Film and obtain gate insulator.Y
2O
3The relative dielectric constant of film is about 15.
Further, use photoetching method and stripping means to form gate electrode 15.Its channel length is 40 μ m, and simultaneously, its channel width is 200 μ m.Electrode is made by Au, and has the thickness of 30nm.
Then, hydrogen (or deuterium) ion is injected amorphous oxides film (Fig. 3 A), in channel layer, to form source electrode portion and drain electrode part (Fig. 3 B).In ion injection period, as shown in Fig. 3 A, hydrogen ion is injected into channel layer by gate insulator.
According to such mode, use gate electrode as mask, and arrange source electrode portion and drain electrode part corresponding to the pattern autoregistration ground of gate electrode.
Inject at ion, use H
+(proton) is as ionic species, and accelerating voltage is 20kV.Ion exposure (irradiation) amount of every area can be made as about 1x10
13(1/cm
2) to 1x10
17(1/cm
2).As in the said circumstances, deuterium ion D has been injected in preparation separately
+Sample.
Use SIMS to carry out component analysis with assessment hydrogen content 0.With 1 * 10
15(1/cm
2) the hydrogen concentration of sample thin film of ion exposure be about 2 * 10
19(1/cm
3).Therefore, for example, the ion exposure amount is 1 * 10 therein
13(1/cm
2) the situation of sample in because hydrogen concentration is equal to or less than detectable limit, so energy measurement hydrogen concentration not.Yet, can assess hydrogen concentration and be about 2 * 10
17(1/cm
3).
The hydrogen ion exposure of each in according to the thin-film transistor of this example in source electrode portion and the drain electrode part is set as 1x10
16(1/cm
2).Hydrogen concentration is assessed as about 2 * 10
20(1/cm
3).Assessment is the conductivity of the sample of preparation separately.Described conductivity is about 80S/cm.In this example, each in source electrode portion and the drain electrode part has sufficiently high conductivity, thereby adopts the structure of having omitted source electrode and drain electrode shown in Figure 1A.
(comparative example 1)
In comparative example, preparation has the device that wherein directly forms the structure of source electrode and drain electrode on oxidation film.On substrate, form amorphous oxide layer.After that, form source electrode, drain electrode, gate insulator and gate electrode by patterning.Do not use Alignment Method.Carry out the formation of each layer based on example 1.The Au electrode that use has 30nm thickness is as in source electrode and the drain electrode each.
The characteristic of assessment TFT device
Fig. 7 A and 7B are illustrated in the exemplary current-voltage characteristic of the TFT device of indoor temperature measurement.Fig. 7 A illustrates the Id-Vd characteristic, and Fig. 7 B illustrates the Id-Vg characteristic.As shown in Figure 7A, drain voltage Vd during together with the dependence of the variation of Vd, is represented typical semiconductor transistor behavior when applying pre-defined gate voltage Vg and measuring source electrode-drain current Id, that is, and saturated when Vd is about 6V (pinch off).About gain characteristic, when applying the Vd of 4V, grid voltage V
GThreshold value be about-0.5V.When Vg is 10V, about 1.0 * 10
-5The electric current I d of A flows.
Transistorized ON/OFF ratio is 10
6Or it is bigger.Further, when by output characteristic calculated field effect mobility, in the zone of saturation, obtain about 8cm
2(Vs)
-1Field-effect mobility.Use the radiation of visible light one mounting arrangement between mounting, and carry out identical measurement.Do not observe the variation of transistor characteristic.
Assessed the variation of the characteristic of the multiple arrangement that on same substrate, prepares.Variation in this example is less than the variation in the comparative example.For example, assessed the variation of conducting electric current.In comparative example, change be about ± 15%.In contrast to this, change in this example be about ± 10%.
In the field-effect transistor according to this example, channel layer (sull) comprises channel part and source electrode portion and drain electrode part, and each in source electrode portion and the drain electrode part has the hydrogen concentration greater than the channel part hydrogen concentration.Therefore, carry out stable being electrically connected between each that expection can be in channel part and source electrode and drain electrode, thereby improve the uniformity and the reliability of device.
Has the hysteresis that the TFT less than comparative example lags behind according to the TFT of this example.Fig. 8 A and 8B illustrate the Id-Vg characteristic in this example and the comparative example, are used for comparing between them.Fig. 8 A illustrates comparative example, and Fig. 8 B illustrates the example of TFT characteristic in this example.As shown in FIG., when adding hydrogen to channel layer, can reduce the hysteresis of TFT.
That is, according to this example, can be in source electrode and drain electrode each with raceway groove between realize resistive gratifying electrical connection of trap-charge, thereby can realize having the thin-film transistor of little hysteresis.
Then, the dynamic characteristic of assessment top grid thin-film transistor.Between source electrode and drain electrode, apply the voltage of 5V.Alternately switch be applied to gate electrode+5V and-voltage of 5V, to measure the response of drain current, each in the described voltage has the pulse duration of 30 μ sec. and the cycle of 30msec..In this example, it is excellent that electric current rises, and the variation of rise time is little between the device.
That is,, can realize that accurately the position between grid, source electrode and drain electrode concerns by Alignment Method according to this example.Therefore, high speed operation is possible, and can realize having the device of high uniformity.
Between the situation of situation that hydrogen ion injects and deuterium ion injection, do not observe big property difference.
Can expect: the field-effect transistor with big relatively field-effect mobility according to this example is used to, and for example, is used to operate the circuit of Organic Light Emitting Diode.
(example 2)
In this example, structure and manufacture method are based on example 1.Yet control hydrogen injection rate is so that the hydrogen concentration of each in source electrode portion and the drain electrode part becomes about 1x10
18(1/cm
3).
In this example, the conductivity of each in source electrode portion and the drain electrode part is not enough, so the conducting electric current is slightly less than the conducting electric current in the example 1.Assessment is with the conductivity of the sample of the independent preparation of above-mentioned hydrogen concentration, to obtain the conductivity of about 0.01S/cm.
When applying low relatively hydrogen concentration, as shown in Fig. 5 A, further provide insulating barrier 19, source electrode and drain electrode, thereby, can realize gratifying transistor characteristic as in the situation of example 1 to source electrode portion and drain portion timesharing.Hysteresis characteristic, uniformity and high speed operation performance also are preferred.
(example 3)
This example is an example of wherein making the bottom-gate TFT device with coplanar structure as shown in Figure 1B.
In this example, use Fig. 4 A to prepare described device to the manufacture method shown in the 4D.Do not use Alignment Method.
Use the PLD method to form the channel layer of making by amorphous In-Ga-Zn-O oxide.Use hydrogen plasma to handle and form source electrode portion and drain electrode part.
At first, upward use photoetching method and stripping means with gate electrode 15 patternings at glass substrate 10 (by Corning Incorporated, 1737 make).Electrode is made by Ta, and has the thickness of 50nm.
Then, use photoetching method and stripping means to form gate insulator 12 by patterning.By using laser deposition method to form HfO with the thickness of 150nm
2Film and obtain gate insulator.
Further, use photoetching method and stripping means by the amorphous In-Zn-Ga-O oxidation film of patterning formation as channel layer.
Use the KrF excimer laser by PLD method deposited amorphous In-Zn-Ga-O oxidation film.
Use has InGaO
3(ZnO)
4The polycrystalline agglomerated material of component is as target, deposited amorphous In-Zn-Ga-O oxidation film.Partial pressure of oxygen when forming described film is 7Pa.The power that should be noted that the KrF excimer laser is 1.5 * 10
-3MJ/cm
2/ pulse, pulse duration is 20nsec, and repetition rate is 10Hz.Further, the temperature of substrate is 25 ℃.
As the result of XRF (XRF) spectrum, the component ratio of metal is In:Ga:Zn=0.97:1.01:4 in the film.Further, as the result of the pattern analysis that uses spectroscopic ellipsometry, the r.m.s. roughness (Rrms) of finding film be about 0.6nm with and film thickness be about 100nm.About the film that obtains, when carrying out glancing angle X-ray diffraction (film process, incidence angle=0.5 degree) on the surface at film approx, do not detect clearly diffraction maximum, this shows that In-Zn-Ga-O film of making is an amorphous film.
Then, form Etching mask 20 (Fig. 4 A) by patterning with pattern identical with the pattern of gate electrode.
After that, use apparatus for processing plasma to handle and add hydrogen to amorphous In-Ga-Zn-O film as channel layer by hydrogen plasma.Can use the plasma CVD apparatus of parallel plate type or the plasma etching equipment of RIE type to carry out hydrogen plasma processing (Fig. 4 B).
Sample that will be processed (substrate that obtains after above step) is kept in the equipment that is drained.After that, from the reactant gas inlet port hydrogeneous gas is introduced, and radio-frequency power is introduced in the container handling, thereby produce plasma by radio frequency (RF) power supply.For example, electrode gap is made as 5cm, substrate temperature is made as 100 ℃, H
2Specific gas flow rate is made as 500sccm, and the internal pressure in chamber is made as 1Torr.The hydrogen content that is subjected to the film of hydrogen plasma processing increases, and its resistivity reduces.
Then, form drain electrode 14 and source electrode 13 by patterning.In the described electrode each is made of gold, and has the thickness (Fig. 4 C) of 30nm.
At last, etching mask 20 is to form the thin-film transistor shown in Fig. 4 D.Channel length is 50 μ m, and channel width is 180 μ m.
(comparative example 2)
Preparation is not subjected to the sample that above-mentioned hydrogen plasma is handled.That is, channel layer has basically hydrogen concentration uniformly on its whole diaphragm area, and does not comprise source electrode portion and drain electrode part.Other structure and manufacture method are based on example 2.
The characteristic evaluation of TFT device
Be presented in the transistorized behavior of typical semiconductor at Vd=6V place saturated (pinch off) according to the thin-film transistor of this embodiment.Described transistorized ON/OFF ratio is 10
6Or bigger, and its field-effect mobility is about 7cm
2(Vs)
-1
When preparation during multiple arrangement, according to the variation of the characteristic of the TFT of example 3 less than variation according to the characteristic of the TFT of comparative example 2.The hysteresis characteristic of the device of example 3 and high speed operation performance also are preferred.
In the field-effect transistor according to this example, channel layer (sull) comprises channel part and source electrode portion and drain electrode part, and each in source electrode portion and the drain electrode part has the hydrogen concentration greater than the channel part hydrogen concentration.Therefore, make stable being electrically connected between each that expection can be in channel part and source electrode and drain electrode, thereby improve the uniformity and the reliability of device.
Can expect: the field-effect transistor with big relatively field-effect mobility according to this example is used to, and for example, is used to operate the circuit of Organic Light Emitting Diode.
(example 4)
This example is the example that wherein forms top grid TFT device as shown in Fig. 5 B on plastic base.
(polyethylene terephthalate, PET) film is as substrate to use PETG.
At first, form channel layer on the substrate by being patterned in.
Further, in this example, in the formation of channel layer, use has two inches size, has In
2O
3The polycrystalline agglomerated material of/ZnO component is as target (material source), and the RF power that applies is 100W.The total pressure of the atmosphere when forming film is 0.4Pa, and wherein gas stream is than being Ar:O
2=100:2.It is 12nm/min that film forms speed, and substrate temperature is 25 ℃.
About the film that obtains, when carrying out glancing angle X-ray diffraction (film process, incidence angle=0.5 degree) on the surface at film approx, do not detect clearly diffraction maximum, this shows that In-Zn-O film of making is an amorphous film.As the result of XRF (XRF) spectrum, the component ratio of metal is In:Zn=1.1:0.9.
Then, piled grids insulating barrier and gate electrode.Gate insulator is formed identical pattern with gate electrode.Gate electrode is by In
2O
3: the nesa coating that Sn forms.
Then, as in the situation of example 3, carry out hydrogen plasma and handle.Use gate electrode to be formed self-aligned source electrode portion 16 and drain electrode part 17 as mask.
Form source electrode and drain electrode by patterning.Use is by In
2O
3: the nesa coating that Sn forms is as in source electrode and the drain electrode each, and its thickness is 100nm.
The characteristic evaluation of TFT device
Be formed on TFT on the PET film at indoor temperature measurement.Transistorized ON/OFF ratio is 10
3Or it is bigger.The field-effect mobility of calculating is about 3cm
2(Vs)
-1As in the situation of example 1, the variation of characteristic between the device, hysteresis characteristic and high speed operation performance are preferred.
When the radius of curvature with 30mm is bent to form device on the PET film, measure transistor characteristic in an identical manner.Do not observe the big variation of transistor characteristic.Carry out identical measurement with visible illumination.Do not observe the variation of transistor characteristic.Zhi Bei thin-film transistor is transparent to visible light and is formed on the flexible substrate in this embodiment.
(example 5)
In this example, will display unit that use field-effect transistor shown in Figure 12 be described.In described field-effect transistor, the island (island) that is used as the ITO film of drain electrode extends up to 100 μ m from its minor face.Stay the part of corresponding extension 90 μ m, to guarantee to be used for the distribution of source electrode and gate electrode.Then, apply TFT with insulating barrier.Polyimide film is applied on the insulating barrier and stands friction (rub) step.On the other hand, prepare the plastic base that wherein ITO film and polyimide film be formed thereon and had carried out the friction step.Described plastic base with its on to form the substrate of each field-effect transistor with the slit of 5 μ m relative, and then nematic liquid crystal is injected into there.A pair of polarizer (polarizing plate) is provided in the both sides of such structure.When applying the voltage that source electrode and the adjustment of voltage to field-effect transistor be applied to its gate electrode, light transmission only is changed the zone as the 30 μ m * 90 μ m of the part of the ITO film island that extends from drain electrode.Become at field-effect transistor during the applying of grid voltage of conducting state, can continuously change described transmissivity by source electrode-drain voltage.Therefore, prepared the use liquid crystal cells conduct display unit of display element as shown in Figure 12.
In another example, use the white plastic substrate as the substrate that forms each TFT on it.With the Jin Dynasty for each the material in the TFT electrode.Omit polyimide film and polarizer.Filled slit between white plastic substrate and the transparent plastic substrate with wherein particle and fluid by the bladder that applies with insulating coating.In the situation of display unit, by the drain electrode of field-effect transistor control extension and the voltage between the ITO film thereon of position, so that the particle in the bladder moves at longitudinal direction with this spline structure.Therefore, can be the reflectivity of display control from the extension drain region that transparent substrate side is observed.
In another example, form a plurality of field-effect transistors located adjacent one anotherly, with preparation example as comprising the normal current control circuit of four transistors and a capacitor.Therefore, can use TFT shown in Figure 11 as one in the last level transistor, to drive EL element.For example, adopt the field-effect transistor of use ITO film as drain electrode.From the zone of the 30 μ m * 90 μ m of the part of the ITO film island of drain electrode extension, form the organic electroluminescent device that comprises electric charge injection layer and luminescent layer in conduct.Like this, can prepare the display unit of using described EL element.
(example 6)
Corresponding in two-dimensional arrangement display element and the field-effect transistor, each in described display element and the field-effect transistor and example 5.For example, arrange 7425 * 1790 pixels with the spacing of short side direction 40 μ m and the spacing of long side direction 120 μ m with square shape, each pixel comprises display element and the field-effect transistor such as liquid crystal cells or EL element in the example 5, and has the area of 30 μ m * 115 μ m.Then, 1790 gate wirings of the gate electrode of 7425 field-effect transistors by long side direction are provided, and provide by in 7425 signal wirings of short side direction from the part of the source electrode of 1790 TFT of the outstanding 5 μ m of amorphous oxide semiconductor films island.Described distribution is connected with source electrode drive circuit with gate driver circuit.In the situation of liquid crystal display cells, when at the colour filter that equates and aim at that its each size and liquid crystal display cells are provided on the surface of device with it when repeating red (R), green (G) and blueness (B) colour filter at long side direction, can make up active matrix color image display device (about 211ppi and A4 size).
In the situation of EL element, in two field-effect transistors that comprise in EL element, the gate electrode of first field-effect transistor is connected with gate line, and the source electrode of second field-effect transistor is connected with holding wire.Repeat the emission wavelength of EL element with the order of R, G and B light at long side direction.Therefore, can make up luminous color image display device with equal resolution.
Can use with the same TFT according to this embodiment of the field-effect transistor of pixel makes up or uses existing IC chip to make up the drive circuit that is used to drive active matrix circuit.
Can on the flexible material that comprises the PET film, form according to field-effect transistor of the present invention.That is, can carry out switch (switch) with case of bending.In addition, field-effect transistor to visible light and have 400nm or more long wavelength's infrared light be transparent, thereby field-effect transistor according to the present invention can be used switch element as LCD or OLED display.Field-effect transistor according to the present invention can be widely used in flexible display, perspective (see-through) display, IC-card and ID label or the like.
According to field-effect transistor of the present invention, channel layer (oxidation film) comprises source electrode portion and the drain electrode part that is added with hydrogen or deuterium.Scheme as an alternative, channel layer (oxidation film) comprise the channel part that contains hydrogen or deuterium and the source electrode portion and the drain electrode part that have greater than the hydrogen concentration of channel part hydrogen concentration.Therefore, make stable being electrically connected between each that can be in channel part and source electrode and drain electrode, thereby improve the uniformity and the reliability of device.Can be in source electrode and drain electrode each with raceway groove between realize resistive gratifying electrical connection of trap-charge, thereby can realize having the field-effect transistor of little hysteresis and excellent character constancy.
According to the present invention, in the time will making field-effect transistor, use the pattern of gate electrode to add hydrogen to oxidation film as mask.Therefore, can be formed self-aligned source electrode portion and drain electrode part with the pattern of gate electrode, the result can concern with the position between done with high accuracy grid, source electrode and drain electrode.
This application requires the priority of the Japanese patent application No.2006-074630 of submission on March 17th, 2006, and it is merged in by reference at this.
Claims (9)
1. a field-effect transistor comprises the oxidation film as semiconductor layer,
Wherein said oxidation film comprises channel part, source electrode portion and drain electrode part, and
The concentration of one of hydrogen and deuterium is greater than the concentration of one of hydrogen and deuterium in the described channel part in wherein said source electrode portion and the drain electrode part.
2. according to the field-effect transistor of claim 1, wherein said source electrode portion and drain electrode part are provided with gate electrode autoregistration ground, and have coplanar structure.
3. according to the field-effect transistor of claim 1, wherein said source electrode portion and drain portion/one resistivity be described channel part resistivity 1/10 or littler.
4. according to the field-effect transistor of claim 1, the amorphous oxides that wherein said oxidation film is expressed by following formula forms:
[(Sn
1-xM4
x)O
2]a·[(In
1-yM3
y)
2O
3]b·[(Zn
1-zM2
zO)]c
Wherein 0≤x≤1,0≤y≤1,0≤z≤1,0≤a≤1,0≤b≤1,0≤c≤1 and a+b+c=1; M4 the VI family element from the group selection that by Si, Ge and Zr constitute littler that be atomic number than Sn; M3 the iii group element from the group selection that by B, Al, Ga and Y constitute littler that be Lu or atomic number than In; And M2 the II family element from the group selection that by Mg and Ca constitute littler that be atomic number than Zn.
5. display unit comprises:
The display element that comprises electrode; And
According to the field-effect transistor of claim 1,
The source electrode portion of wherein said field-effect transistor and drain portion/one is electrically connected with the described electrode of described display element.
6. according to the display unit of claim 5, wherein a plurality of display elements and a plurality of field-effect transistor by two-dimensional arrangement on substrate.
7. a manufacturing comprises that described oxidation film comprises channel part, source electrode portion and drain electrode part as the method for the field-effect transistor of the oxidation film of semiconductor layer, and described method comprises the steps:
On substrate, form described oxidation film; And
Add one of hydrogen and deuterium to described oxidation film, so that the concentration of one of hydrogen and deuterium is greater than the concentration of one of hydrogen and deuterium in the described channel part in described source electrode portion and the drain electrode part.
8. a manufacturing comprises as the method for the field-effect transistor of the oxidation film of semiconductor layer, comprises the steps:
On substrate, form described oxidation film;
On described oxidation film, form gate insulating film;
On described gate insulating film, form gate electrode; And
The pattern that uses described gate electrode adds one of hydrogen and deuterium to described oxidation film as mask, to be formed self-aligned source electrode portion and drain electrode part with the pattern of described gate electrode in described oxidation film.
9. field-effect transistor comprises:
The oxide semiconductor layer that comprises channel region;
Gate electrode;
Gate insulator;
Drain electrode; And
Source electrode,
Wherein said oxide semiconductor layer further comprises a pair of doped region of contiguous described source electrode or drain electrode, and each in the described doped region has at least a in hydrogen and the deuterium, and
The concentration of one of hydrogen and deuterium is greater than the concentration of one of hydrogen and deuterium in the described channel region in the wherein said doped region.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006074630A JP5110803B2 (en) | 2006-03-17 | 2006-03-17 | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD FOR MANUFACTURING THE SAME |
| JP074630/2006 | 2006-03-17 | ||
| PCT/JP2007/055296 WO2007119386A1 (en) | 2006-03-17 | 2007-03-08 | Field effect transistor using oxide film for channel and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101401213A CN101401213A (en) | 2009-04-01 |
| CN101401213B true CN101401213B (en) | 2011-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800091475A Expired - Fee Related CN101401213B (en) | 2006-03-17 | 2007-03-08 | Field effect transistor using oxide film for channel and method of manufacturing the same |
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| Country | Link |
|---|---|
| US (2) | US8003981B2 (en) |
| EP (1) | EP1984954B1 (en) |
| JP (1) | JP5110803B2 (en) |
| KR (1) | KR101142327B1 (en) |
| CN (1) | CN101401213B (en) |
| AT (1) | ATE527693T1 (en) |
| BR (1) | BRPI0709583B8 (en) |
| RU (1) | RU2400865C2 (en) |
| WO (1) | WO2007119386A1 (en) |
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| EP1984954A1 (en) | 2008-10-29 |
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| JP2007250983A (en) | 2007-09-27 |
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| BRPI0709583B1 (en) | 2018-05-29 |
| JP5110803B2 (en) | 2012-12-26 |
| US20110256684A1 (en) | 2011-10-20 |
| RU2400865C2 (en) | 2010-09-27 |
| CN101401213A (en) | 2009-04-01 |
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