CN101346813A - Circuit board device for wafer inspection, probe card, and wafer inspection device - Google Patents
Circuit board device for wafer inspection, probe card, and wafer inspection device Download PDFInfo
- Publication number
- CN101346813A CN101346813A CNA2006800485504A CN200680048550A CN101346813A CN 101346813 A CN101346813 A CN 101346813A CN A2006800485504 A CNA2006800485504 A CN A2006800485504A CN 200680048550 A CN200680048550 A CN 200680048550A CN 101346813 A CN101346813 A CN 101346813A
- Authority
- CN
- China
- Prior art keywords
- sheet
- anisotropic conductive
- conductive elastomer
- wafer inspection
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
技术领域 technical field
本发明涉及用于在晶片状态下对晶片上形成的多个集成电路进行电气检查的晶片检查用电路基板装置、具有该晶片检查用电路基板装置的探针卡、以及晶片检查装置。The present invention relates to a wafer inspection circuit board device for electrically inspecting a plurality of integrated circuits formed on a wafer in a wafer state, a probe card having the wafer inspection circuit board device, and a wafer inspection device.
背景技术 Background technique
一般地说,在半导体集成电路装置的制造工序中,例如在由硅构成的晶片上形成多个集成电路,而后,通过检查这些集成电路中的每一个的基本电气特性,进行筛选有缺陷的集成电路的探测试验。接着,通过切断此晶片而形成半导体芯片,将该半导体芯片容纳在适合的封装内加以密封。进而,对封装后的各个半导体集成电路装置,进行通过在高温环境下检查其电气特性来筛选有潜在缺陷的半导体集成电路装置的预烧(burn-in)试验。Generally speaking, in the manufacturing process of semiconductor integrated circuit devices, for example, a plurality of integrated circuits are formed on a wafer composed of silicon, and then, by checking the basic electrical characteristics of each of these integrated circuits, screening for defective integrated circuits is carried out. Circuit probing tests. Next, semiconductor chips are formed by cutting this wafer, and the semiconductor chips are accommodated in a suitable package and sealed. Furthermore, for each packaged semiconductor integrated circuit device, a burn-in test is performed to screen potential defective semiconductor integrated circuit devices by examining their electrical characteristics in a high-temperature environment.
然后,对晶片上形成的集成电路进行探测试验,过去都采用把晶片划分为形成有多个(例如16个)集成电路的多个区域,对在其区域内形成的所有集成电路一并进行探测试验,并且顺序对在其它区域内形成的集成电路一并进行探测试验的方法。近年来,为了提高检查效率,降低检查成本,要求对更多的集成电路一并进行探测试验。Then, the detection test is carried out on the integrated circuits formed on the wafer. In the past, the wafer is divided into multiple areas with multiple (for example, 16) integrated circuits formed, and all the integrated circuits formed in the area are detected together. test, and sequentially conduct probing tests on integrated circuits formed in other areas. In recent years, in order to improve the inspection efficiency and reduce the inspection cost, it is required to perform probing tests on more integrated circuits at the same time.
另一方面,在预烧试验中,因为作为检查对象的集成电路装置既微小又不便操作,所以为了逐个进行多个集成电路装置的预烧试验,需要很长的时间,因此,检查成本就相当高。为此,近年来提出了对晶片上形成的多个集成电路一并进行预烧试验的WLBI(Wafer LevelBurn-in:晶片级预烧)试验。On the other hand, in the burn-in test, since the integrated circuit device to be inspected is small and inconvenient to handle, it takes a long time to perform the burn-in test of a plurality of integrated circuit devices one by one, so the inspection cost is considerable. high. For this reason, in recent years, a WLBI (Wafer Level Burn-in: Wafer Level Burn-in) test has been proposed in which a plurality of integrated circuits formed on a wafer are collectively subjected to a burn-in test.
在这样的探测试验或者预烧试验等集成电路的电气检查中,为了使作为检查对象的晶片中的各个被检查电极与测试器(tester)电连接,使用了具有按照与被检查电极的图案对应的图案设置的多个触点的探针卡。In such electrical inspections of integrated circuits such as probing tests or burn-in tests, in order to electrically connect each of the inspected electrodes in the wafer to be inspected to a tester (tester), a device with a pattern corresponding to the inspected electrodes is used. A patterned set of probe cards with multiple contacts.
过去,作为探针卡,众所周知的有接触部件是悬臂型的和垂直针型的。最近,提出了接触部件包括具有弹性各向异性导电膜的各向异性导电性连接器和在绝缘性片上配置了电极结构体的片状探针的平面型探针卡(参照专利文献1)。这些探针卡是在例如由多层印刷布线板构成的检查用电路基板上配置上述那样的接触部件而构成的。In the past, as probe cards, well-known contact members are cantilever type and vertical pin type. Recently, a planar probe card has been proposed in which a contact member includes an anisotropic conductive connector having an elastic anisotropic conductive film and a sheet-like probe in which an electrode structure is disposed on an insulating sheet (see Patent Document 1). These probe cards are configured by arranging the above-mentioned contact members on an inspection circuit board made of, for example, a multilayer printed wiring board.
然而,在对在晶片上形成的多个集成电路一并进行电气检查时,作为构成在该检查中使用的探针卡的检查用电路基板,使用了由层数相当多的(例如层数为30~40层或更多的)多层印刷布线板构成的电路基板。However, when a plurality of integrated circuits formed on a wafer are collectively electrically inspected, as an inspection circuit board constituting a probe card used in the inspection, a circuit board having a considerable number of layers (for example, the number of layers is 30 to 40 layers or more) A circuit substrate composed of a multilayer printed wiring board.
但是,难以可靠地制造层数相当多且连接可靠性高的多层印刷布线板,因此,由于检查用电路基板的成品率相当低,所以存在探针卡的制造成本高,由此检查成本增大的问题。However, it is difficult to reliably manufacture a multilayer printed wiring board with a relatively large number of layers and high connection reliability. Therefore, since the yield of the circuit board for inspection is relatively low, there is a problem that the manufacturing cost of the probe card is high, thereby increasing the inspection cost. Big question.
专利文献1:日本特开2004-53409号公报Patent Document 1: Japanese Unexamined Patent Publication No. 2004-53409
发明内容 Contents of the invention
(发明要解决的问题)(problem to be solved by the invention)
本发明就是基于以上这些情况而提出的,其目的在于提供:一种用于对多个集成电路一并进行电气检查的、能以小的成本制造且连接可靠性高的晶片检查用电路基板装置,具有该晶片检查用电路基板装置的探针卡以及晶片检查装置。The present invention has been made based on the above circumstances, and its object is to provide a circuit board device for wafer inspection that can be manufactured at low cost and has high connection reliability for electrically inspecting a plurality of integrated circuits. , A probe card and a wafer inspection device having the circuit board device for wafer inspection.
(解决问题的方案)(solution to the problem)
本发明的晶片检查用电路基板装置是用于在晶片状态下对在晶片上形成的多个集成电路进行电气检查的晶片检查用电路基板装置,其特征在于:The circuit substrate device for wafer inspection of the present invention is a circuit substrate device for wafer inspection for electrically inspecting a plurality of integrated circuits formed on a wafer in a wafer state, and is characterized in that:
具有:由在表面具有连接用电极的布线板构成的基板本体、以及在该基板本体的表面上设置的由多个连接器单元重叠而构成的连接器装置;It has: a substrate body composed of a wiring board having connection electrodes on the surface, and a connector device formed by overlapping a plurality of connector units provided on the surface of the substrate body;
上述连接器装置中的各个连接器单元具有:第1各向异性导电性弹性体片、在该第1各向异性导电性弹性体片上配置的复合导电性片、在该复合导电性片上配置的第2各向异性导电性弹性体片、以及在该第2各向异性导电性弹性体片上配置的由在表面具有连接用电极且在背面具有端子电极的布线板构成的间距变换板;Each connector unit in the above-mentioned connector device has: a first anisotropic conductive elastomer sheet, a composite conductive sheet arranged on the first anisotropic conductive elastomer sheet, and a composite conductive sheet arranged on the composite conductive sheet. A second anisotropic conductive elastomer sheet, and a pitch conversion plate arranged on the second anisotropic conductive elastomer sheet and composed of a wiring board having a connection electrode on the surface and a terminal electrode on the back;
上述复合导电性片具有:形成有分别在厚度方向上延伸的多个贯通孔的绝缘性片、以及在该绝缘性片的各贯通孔中从该绝缘性片的两面分别突出地设置的刚性导体,各个上述刚性导体在贯通插入在上述绝缘性片的贯通孔中的主干部的两端形成有直径比该绝缘性片的贯通孔的直径大的端子部,且能够相对于该绝缘性片在其厚度方向上移动;The above-mentioned composite conductive sheet has: an insulating sheet formed with a plurality of through-holes each extending in the thickness direction; Each of the above-mentioned rigid conductors is formed with a terminal portion having a diameter larger than the diameter of the through-hole of the insulating sheet at both ends of the main body inserted into the through-hole of the insulating sheet, and can be positioned relative to the insulating sheet. Move in its thickness direction;
上述基板本体的连接用电极和上述间距变换板的连接用电极中的每一个都通过第1各向异性导电性弹性体片、复合导电性片的刚性导体和第2各向异性导电性弹性体片,与在正上方配置的间距变换板的端子电极电连接。(以下,将该发明称作“第1发明”)Each of the connection electrodes of the above-mentioned substrate body and the connection electrodes of the above-mentioned pitch conversion plate passes through the first anisotropic conductive elastomer sheet, the rigid conductor of the composite conductive sheet, and the second anisotropic conductive elastomer sheet. The sheet is electrically connected to the terminal electrodes of the pitch conversion board arranged directly above. (Hereafter, this invention is referred to as "the first invention")
另外,本发明的晶片检查用电路基板装置是用于在晶片状态下对晶片上形成的多个集成电路进行电气检查的晶片检查用电路基板装置,其特征在于:In addition, the circuit substrate device for wafer inspection of the present invention is a circuit substrate device for wafer inspection for electrically inspecting a plurality of integrated circuits formed on a wafer in a wafer state, and is characterized in that:
具有:由在表面具有连接用电极的布线板构成的基板本体、以及在该基板本体的表面上设置的由多个连接器单元重叠而构成的连接器装置;It has: a substrate body composed of a wiring board having connection electrodes on the surface, and a connector device formed by overlapping a plurality of connector units provided on the surface of the substrate body;
上述连接器装置中的各个连接器单元具有:第1各向异性导电性弹性体片、在该第1各向异性导电性弹性体片上配置的复合导电性片、在该复合导电性片上设置的板状的间隔物部件、在该间隔物部件上配置的第2各向异性导电性弹性体片、以及在该第2各向异性导电性弹性体片上配置的由在表面具有连接用电极且在背面具有端子电极的布线板构成的间距变换板;Each connector unit in the above-mentioned connector device has: a first anisotropic conductive elastomer sheet, a composite conductive sheet disposed on the first anisotropic conductive elastomer sheet, and a composite conductive sheet disposed on the composite conductive sheet. A plate-shaped spacer member, a second anisotropic conductive elastomer sheet arranged on the spacer member, and an electrode provided on the surface of the second anisotropic conductive elastomer sheet and connected to the A pitch conversion board composed of a wiring board with terminal electrodes on the back;
上述复合导电性片具有:形成有分别在厚度方向上延伸的多个贯通孔的绝缘性片、以及在该绝缘性片的各贯通孔中从该绝缘性片的两面分别突出地设置的刚性导体,各个上述刚性导体在贯通插入在上述绝缘性片的贯通孔中的主干部的两端形成有直径比该绝缘性片的贯通孔的直径大的端子部,且能够相对于该绝缘性片在其厚度方向上移动;The above-mentioned composite conductive sheet has: an insulating sheet formed with a plurality of through-holes each extending in the thickness direction; Each of the above-mentioned rigid conductors is formed with a terminal portion having a diameter larger than the diameter of the through-hole of the insulating sheet at both ends of the main body inserted into the through-hole of the insulating sheet, and can be positioned relative to the insulating sheet. Move in its thickness direction;
在上述间隔物部件的与上述复合导电性片中的各刚性导体对应的位置上形成有直径比该刚性导体的端子部的直径大的多个开口;A plurality of openings having a diameter larger than a diameter of a terminal portion of the rigid conductor are formed on the spacer member at positions corresponding to the respective rigid conductors in the composite conductive sheet;
上述基板本体的连接用电极和上述间距变换板的连接用电极中的每一个都通过第1各向异性导电性弹性体片、复合导电性片的刚性导体和第2各向异性导电性弹性体片与在正上方配置的间距变换板的端子电极电连接。(以下,将该发明称作“第2发明”)Each of the connection electrodes of the above-mentioned substrate body and the connection electrodes of the above-mentioned pitch conversion plate passes through the first anisotropic conductive elastomer sheet, the rigid conductor of the composite conductive sheet, and the second anisotropic conductive elastomer sheet. The sheet is electrically connected to the terminal electrodes of the pitch conversion board arranged directly above. (Hereafter, this invention is referred to as "the second invention")
在这样的晶片检查用电路基板装置中,优选地,刚性导体在复合导电性片的绝缘性片的厚度方向上的可移动距离为5~50μm。In such a circuit board device for wafer inspection, it is preferable that the movable distance of the rigid conductor in the thickness direction of the insulating sheet of the composite conductive sheet is 5 to 50 μm.
另外,优选地,第1各向异性导电性弹性体片以及第2各向异性导电性弹性体片中的每一个都是使表现出磁性的导电性粒子以在厚度方向上并排取向而形成链的状态且以由该导电性粒子形成的链在面方向上分散的状态含在弹性高分子物质中。In addition, it is preferable that each of the first anisotropic conductive elastomer sheet and the second anisotropic conductive elastomer sheet has conductive particles exhibiting magnetism aligned side by side in the thickness direction to form a chain. The state and the chain formed by the conductive particles are contained in the elastic polymer substance in the state of being dispersed in the plane direction.
本发明的晶片检查用电路基板装置是用于在晶片状态下对晶片上形成的多个集成电路进行电气检查的晶片检查用电路基板装置,其特征在于:The circuit substrate device for wafer inspection of the present invention is a circuit substrate device for wafer inspection for electrically inspecting a plurality of integrated circuits formed on a wafer in a wafer state, and is characterized in that:
具有:由在表面具有连接用电极的布线板构成的基板本体、以及在该基板本体的表面上设置的由多个连接器单元重叠而构成的连接器装置;It has: a substrate body composed of a wiring board having connection electrodes on the surface, and a connector device formed by overlapping a plurality of connector units provided on the surface of the substrate body;
上述连接器装置中的各个连接器单元具有:各向异性导电性弹性体片、在该各向异性导电性弹性体片上配置的由在表面具有连接用电极且在背面具有端子电极的布线板构成的间距变换板;Each connector unit in the above-mentioned connector device has: an anisotropic conductive elastomer sheet, and a wiring board disposed on the anisotropic conductive elastomer sheet and composed of a connection electrode on the surface and a terminal electrode on the rear surface. the pitch transformation board;
上述基板本体的连接用电极和上述间距变换板的连接用电极都通过各向异性导电性弹性体片与在正上方配置的间距变换板的端子电极电连接。(以下,将该发明称作第3发明)Both the connection electrodes of the substrate body and the connection electrodes of the pitch conversion board are electrically connected to the terminal electrodes of the pitch conversion board arranged directly above through the anisotropic conductive elastomer sheet. (Hereafter, this invention is referred to as the third invention)
在这样的晶片检查用电路基板装置中,优选地,各向异性导电性弹性体片是使表现出磁性的导电性粒子以在厚度方向上并排取向而形成链的状态且以由导电性粒子形成的链在面方向上分散的状态含在弹性高分子物质中。In such a circuit board device for wafer inspection, it is preferable that the anisotropic conductive elastomer sheet is in a state in which conductive particles exhibiting magnetism are aligned side by side in the thickness direction to form a chain and is formed of conductive particles. The state in which the chains are dispersed in the plane direction is contained in the elastic polymer substance.
另外,在这样的晶片检查用电路基板装置中,优选地,连接器装置是由3个以上的连接器单元重叠而成的。In addition, in such a circuit board device for wafer inspection, it is preferable that the connector device is formed by stacking three or more connector units.
本发明的探针卡的特征在于:具有上述的晶片检查用电路基板装置和在该晶片检查用电路基板装置上设置的接触部件而构成。The probe card of the present invention is characterized in that it includes the above-mentioned circuit board device for wafer inspection and a contact member provided on the circuit board device for wafer inspection.
本发明的晶片检查装置的特征在于:具有上述的探针卡。A wafer inspection apparatus according to the present invention is characterized by comprising the above-mentioned probe card.
本发明的复合导电性片的特征在于:具有:The composite conductive sheet of the present invention is characterized in that it has:
形成有分别在厚度方向上延伸的多个贯通孔的绝缘性片;an insulating sheet formed with a plurality of through holes each extending in the thickness direction;
在该绝缘性片的各贯通孔中从该绝缘性片的两面分别突出地设置的、在贯通插入在上述绝缘性片的贯通孔中的主干部的两端形成有直径比绝缘性片的贯通孔的直径大的端子部的刚性导体;以及In each through hole of the insulating sheet protruding from both sides of the insulating sheet, a through hole with a diameter ratio of the insulating sheet is formed at both ends of the trunk part inserted into the through hole of the insulating sheet. The rigid conductor of the terminal portion with a large hole diameter; and
在上述绝缘性片上一体地设置的、在与各个上述刚性导体对应的位置上形成有直径比该刚性导体的端子部的直径大的多个开口的板状的间隔物部件,且A plate-shaped spacer member having a plurality of openings having a diameter larger than a diameter of a terminal portion of the rigid conductor is formed integrally on the insulating sheet at a position corresponding to each of the rigid conductors, and
各个上述刚性导体能够相对于上述绝缘性片在其厚度方向上移动。Each of the rigid conductors can move in the thickness direction with respect to the insulating sheet.
(发明效果)(invention effect)
根据第1和第2发明的晶片检查用电路基板装置,由于具有由具有间距变换板的多个连接器单元重叠而构成的连接器装置,各个连接器单元中的间距变换板可以由单层布线板或层数少的多层布线板构成,可以以高的成品率比较容易地制造这样的布线板,所以能实现整个晶片检查用电路基板装置的制造成本的降低。According to the circuit board devices for wafer inspection according to the first and second inventions, since there is a connector device constituted by overlapping a plurality of connector units having pitch conversion boards, the pitch conversion boards in each connector unit can be wired in a single layer. A multilayer wiring board or a multilayer wiring board with a small number of layers can be manufactured relatively easily with a high yield, so that the manufacturing cost of the entire circuit board device for wafer inspection can be reduced.
另外,在邻接的间距变换板之间以及在基板本体与间距变换板之间,第1各向异性导电性弹性体片、具有刚性导体的复合导电性片以及第2各向异性导电性弹性体片相层叠,因为复合导电性片中的刚性导体能够相对绝缘性片在其厚度方向上移动,所以第1各向异性导电性弹性体片以及第2各向异性导电性弹性体片通过刚性导体移动而相互联动地压缩变形,结果能够确实发现两者具有的凹凸吸收能,因此在邻接的间距变换板之间以及在基板本体与间距变换板之间可以获得高的可靠性。In addition, between adjacent pitch changing plates and between the substrate body and the pitch changing plate, the first anisotropic conductive elastomer sheet, the composite conductive sheet having a rigid conductor, and the second anisotropic conductive elastic body The sheets are stacked, because the rigid conductor in the composite conductive sheet can move in the thickness direction relative to the insulating sheet, so the first anisotropic conductive elastomer sheet and the second anisotropic conductive elastomer sheet pass through the rigid conductor As a result of moving and compressively deforming in conjunction with each other, the unevenness of both can absorb energy reliably, so high reliability can be obtained between adjacent pitch changing plates and between the substrate body and the pitch changing plate.
因此,可以以低成本制造且可以获得连接可靠性高的晶片检查用电路基板装置。Therefore, a wafer inspection circuit board device can be manufactured at low cost and has high connection reliability.
另外,根据第2发明的晶片检查用电路基板装置,由于在连接器单元的复合导电性片与第2各向异性导电性弹性体片之间设置有间隔物部件,所以可以缓和由刚性导体施加在第1各向异性导电性弹性体片和第2各向异性导电性弹性体片上的压力,结果可以防止或抑制第1各向异性导电性弹性体片和第2各向异性导电性弹性体片在早期发生故障。In addition, according to the circuit board device for wafer inspection according to the second invention, since the spacer member is provided between the composite conductive sheet of the connector unit and the second anisotropic conductive elastic body sheet, it is possible to alleviate the stress caused by the rigid conductor. The pressure on the first anisotropic conductive elastomer sheet and the second anisotropic conductive elastomer sheet can prevent or suppress the pressure on the first anisotropic conductive elastomer sheet and the second anisotropic conductive elastomer sheet Chips fail early on.
根据第3发明的晶片检查用电路基板装置,由于具有由具有间距变换板的多个连接器单元重叠而构成的连接器装置,各个连接器单元中的间距变换板可以由单层布线板和层数少的多层布线板构成,可以以高的成品率比较容易地制造这样的布线板,所以能实现整个晶片检查用电路基板装置的制造成本的降低。According to the circuit board device for wafer inspection according to the third invention, since it has a connector device composed of a plurality of connector units having a pitch conversion board stacked, the pitch conversion board in each connector unit can be composed of a single-layer wiring board and a layer. With a small number of multilayer wiring boards, such a wiring board can be manufactured relatively easily with a high yield, so that the manufacturing cost of the entire wafer inspection circuit board device can be reduced.
根据本发明的探针卡,由于具有上述晶片检查用电路基板装置,所以能以低成本制造该探针,且可以获得高的连接可靠性。According to the probe card of the present invention, since the above-mentioned circuit board device for wafer inspection is provided, the probe can be manufactured at low cost, and high connection reliability can be obtained.
根据本发明的晶片检查装置,由于具有上述探针卡,所以可以实现检查成本的降低,而且,能够对晶片进行可靠性高的检查。According to the wafer inspection apparatus of the present invention, since the probe card is provided, it is possible to reduce the inspection cost and to perform highly reliable inspection on the wafer.
附图说明 Description of drawings
图1是示出根据第1发明的晶片检查用电路基板装置的一例的结构的说明用剖视图。1 is an explanatory cross-sectional view showing the configuration of an example of a circuit board device for wafer inspection according to the first invention.
图2是示出图1所示的晶片检查用电路基板装置的主要部分的结构的说明用剖视图。2 is an explanatory cross-sectional view showing the configuration of a main part of the circuit board device for wafer inspection shown in FIG. 1 .
图3是图1所示的晶片检查用电路基板装置的俯视图。Fig. 3 is a plan view of the circuit board device for wafer inspection shown in Fig. 1 .
图4是将图1所示的晶片检查用电路基板装置中的引线电极部放大后示出的说明图。FIG. 4 is an explanatory view showing an enlarged lead electrode portion in the circuit board device for wafer inspection shown in FIG. 1 .
图5是把各向异性导电性弹性体片的主要部分放大后示出的说明用剖视图。Fig. 5 is an explanatory cross-sectional view showing an enlarged main part of the anisotropic conductive elastomer sheet.
图6是示出用于制造第1各向异性导电性弹性体片的一面侧成形部件、另一面侧成形部件以及间隔物的说明用剖视图。6 is an explanatory cross-sectional view showing a molding member on one surface, a molding member on the other surface, and a spacer for producing the first anisotropic conductive elastomer sheet.
图7是示出在另一面侧成形部件的表面上涂敷有导电性弹性体用材料的状态的说明用剖视图。7 is an explanatory cross-sectional view showing a state where a conductive elastomer material is applied to the surface of the other-side molding member.
图8是示出在一面侧成形部件和另一面侧成形部件之间形成有导电性弹性体用材料层的状态的说明用剖视图。8 is an explanatory sectional view showing a state in which a material layer for a conductive elastomer is formed between a one-surface-side molding member and another-surface-side molding member.
图9放大示出图8所示的导电性弹性体用材料层的说明用剖视图。FIG. 9 is an enlarged explanatory cross-sectional view showing the conductive elastomer material layer shown in FIG. 8 .
图10是示出沿其厚度方向对图8所示的导电性弹性体用材料层作用了磁场的状态的说明用剖视图。10 is an explanatory cross-sectional view showing a state where a magnetic field acts on the conductive elastomer material layer shown in FIG. 8 in its thickness direction.
图11是将复合导电性片的主要部分放大后示出的俯视图。Fig. 11 is an enlarged plan view showing a main part of the composite conductive sheet.
图12是示出用于制造复合导电性片的层叠材料结构的说明用剖视图。Fig. 12 is an explanatory cross-sectional view showing the structure of a laminated material used to manufacture a composite conductive sheet.
图13是示出在层叠材料中的金属层上形成了开口的状态的说明用剖视图。13 is an explanatory cross-sectional view showing a state in which openings are formed in the metal layer in the laminated material.
图14是示出在层叠材料中的绝缘性片上形成了贯通孔的状态的说明用剖视图。14 is an explanatory cross-sectional view showing a state in which a through-hole is formed in an insulating sheet in a laminated material.
图15是示出复合层叠材料的结构的说明用剖视图。Fig. 15 is an explanatory sectional view showing the structure of the composite laminate.
图16是示出在复合层叠材料中形成了光刻胶膜的状态的说明用剖视图。16 is an explanatory cross-sectional view showing a state where a photoresist film is formed in a composite laminated material.
图17是示出在复合层叠材料中的绝缘性片的贯通孔中形成了刚性导体的状态的说明用剖视图。17 is an explanatory cross-sectional view showing a state in which a rigid conductor is formed in a through-hole of an insulating sheet in a composite laminated material.
图18是示出从复合层叠材料中去除了光刻胶膜后的状态的说明用剖视图。18 is an explanatory cross-sectional view showing a state where a photoresist film has been removed from the composite laminated material.
图19是示出根据第1发明的晶片检查用电路基板装置的另一例的俯视图。19 is a plan view showing another example of the circuit board device for wafer inspection according to the first invention.
图20是示出根据第2发明的晶片检查用电路基板装置的一例的主要部分的结构的说明用剖视图。20 is an explanatory cross-sectional view showing the configuration of a main part of an example of the circuit board device for wafer inspection according to the second invention.
图21是示出根据第3发明的晶片检查用电路基板装置的一例的主要部分的结构的说明用剖视图。21 is an explanatory cross-sectional view showing the configuration of a main part of an example of the circuit board device for wafer inspection according to the third invention.
图22是示出根据本发明的探针卡的第1例的结构的说明用剖视图。22 is an explanatory cross-sectional view showing the structure of a first example of the probe card according to the present invention.
图23是第1例的探针卡中的各向异性导电性连接器的俯视图。Fig. 23 is a plan view of an anisotropic conductive connector in the probe card of the first example.
图24是把第1例的探针卡中的各向异性导电性连接器的主要部分放大后示出的说明用剖视图。Fig. 24 is an explanatory sectional view showing an enlarged main part of the anisotropic conductive connector in the probe card of the first example.
图25是第1例的探针卡中的片状探针的俯视图。Fig. 25 is a plan view of a chip probe in the probe card of the first example.
图26是把第1例的探针卡中的片状探针的接点膜放大后示出的俯视图。Fig. 26 is an enlarged plan view of the contact film of the chip probe in the probe card of the first example.
图27是把第1例的探针卡中的片状探针的接点膜的结构放大后示出的说明用剖视图。27 is an explanatory sectional view showing an enlarged structure of a contact film of a chip probe in the probe card of the first example.
图28是示出第1例的探针卡中的片状探针的框架板的俯视图。28 is a plan view showing a frame plate of a chip probe in the probe card of the first example.
图29是示出用于制造片状探针的层叠体的结构的说明用剖视图。FIG. 29 is an explanatory cross-sectional view showing the structure of a laminate for manufacturing a sheet-like probe.
图30是示出在框架板的周缘部上配置了保护胶带的状态的说明用剖视图;FIG. 30 is an explanatory cross-sectional view showing a state in which a protective tape is disposed on a peripheral portion of a frame plate;
图31是示出在图29中示出的层叠体中的背面电极部用金属箔上形成了接合层的状态的说明用剖视图。31 is an explanatory cross-sectional view showing a state in which a bonding layer is formed on the metal foil for a back electrode portion in the laminate shown in FIG. 29 .
图32是示出在层叠体中的背面电极部用金属箔上接合了框架板的状态的说明用剖视图。32 is an explanatory cross-sectional view showing a state in which a frame plate is joined to the metal foil for the back electrode portion in the laminate.
图33是示出在层叠体中的绝缘膜用树脂片中形成了贯通孔的状态的说明用剖视图。33 is an explanatory cross-sectional view showing a state in which a through-hole is formed in a resin sheet for an insulating film in a laminate.
图34是示出在层叠体中的绝缘膜用树脂片中形成了短路部和表面电极部的状态的说明用剖视图。34 is an explanatory cross-sectional view showing a state in which a short-circuit portion and a surface electrode portion are formed in a resin sheet for an insulating film in a laminate.
图35是示出去除接合层的一部分而露出背面电极部用金属箔的状态的说明用剖视图。35 is an explanatory cross-sectional view showing a state in which the metal foil for the back electrode portion is exposed by removing a part of the bonding layer.
图36是示出形成了背面电极部的状态的说明用剖视图。FIG. 36 is an explanatory cross-sectional view showing a state in which a rear surface electrode portion is formed.
图37是示出形成了绝缘膜的状态的说明用剖视图。37 is an explanatory cross-sectional view showing a state where an insulating film is formed.
图38是示出根据本发明的探针卡的第2例的结构的说明用剖视图。Fig. 38 is an explanatory sectional view showing the structure of a second example of the probe card according to the present invention.
图39是第2例的探针卡中的各向异性导电性连接器的俯视图。Fig. 39 is a plan view of an anisotropic conductive connector in the probe card of the second example.
图40是第2例的探针卡中的片状探针的框架板的俯视图。Fig. 40 is a plan view of the frame plate of the chip probe in the probe card of the second example.
图41是示出根据本发明的晶片检查装置的第1例的结构的说明用剖视图。Fig. 41 is an explanatory sectional view showing the structure of the first example of the wafer inspection apparatus according to the present invention.
图42是将第1例的晶片检查装置的主要部分的结构放大后示出的说明用剖视图。42 is an explanatory cross-sectional view showing an enlarged configuration of a main part of the wafer inspection apparatus of the first example.
图43是将第1例的晶片检查装置中的连接器放大后示出的说明用剖视图。43 is an explanatory cross-sectional view showing enlarged connectors in the wafer inspection apparatus of the first example.
图44是示出根据本发明的晶片检查装置的第2例的结构的说明用剖视图。44 is an explanatory cross-sectional view showing the structure of a second example of the wafer inspection apparatus according to the present invention.
(符号说明)(Symbol Description)
2控制器2 controllers
3输入输出端子3 input and output terminals
3R输入输出端子部3R input and output terminal section
4连接器4 connectors
4A导电针4A conductive needle
4B支持部件4B support components
5晶片载台5 wafer stage
6晶片6 chips
7被检查电极7 electrodes to be inspected
10探针卡10 probe cards
11晶片检查用电路基板装置11 Circuit board device for wafer inspection
12基板本体12 substrate body
13引线电极13 lead electrodes
13R引线电极部13R Lead electrode part
14支架14 brackets
14K开口14K opening
14S台阶部14S steps
15连接用电极15 Electrodes for connection
17加强材料17 reinforcement material
20连接器装置20 connector set
21连接器单元21 connector unit
22第1各向异性导电性弹性体片22 The first anisotropic conductive elastomer sheet
22A导电性弹性体用材料层Material layer for 22A conductive elastomer
22B导电性弹性体用材料22B Materials for Conductive Elastomers
23第2各向异性导电性弹性体片23 The second anisotropic conductive elastomer sheet
23a各向异性导电性弹性体片23a Anisotropic conductive elastomer sheet
24间隔物部件24 spacer parts
24H开口24H opening
25复合导电性片25 composite conductive sheet
25A复合叠层材料25A composite laminated material
25B叠层材料25B laminate material
26绝缘性片26 insulating sheets
26H贯通孔26H through hole
27刚性导体27 rigid conductor
27a主干部27a trunk
27b端子部27b terminal part
28A金属层28A metal layer
28B金属薄层28B thin metal layer
28K开口28K opening
29光刻胶膜29 photoresist film
29H图案孔29H pattern hole
30间距变换板30 pitch conversion board
31连接用电极31 Electrodes for connection
32端子电极32-terminal electrode
35一面侧成形部件35 side forming parts
36另一面侧成形部件36 other side forming parts
37间隔物37 spacers
37K开口37K opening
38加压辊装置38 pressure roller device
38a加压辊38a pressure roller
38b支撑辊38b support roller
39接触部件39 contact parts
40各向异性导电性连接器40 Anisotropic Conductive Connectors
41框架板41 frame board
42开口42 openings
43弹性各向异性导电膜43 elastic anisotropic conductive film
44连接用导电部44 Conductive part for connection
45绝缘部45 insulation part
46功能部46 functional department
47突出部47 protrusion
48被支持部48 Supported Ministry
50片状探针50 sheet probes
51框架板51 frame board
52开口52 openings
54保持部件54 holding parts
55接点膜55 contact film
55A层叠体55A laminate
56绝缘膜56 insulation film
56A绝缘膜用树脂片56A resin sheet for insulating film
57电极结构体57 electrode structures
57H贯通孔57H through hole
57a表面电极部57a surface electrode part
57b背面电极部57b rear electrode part
57c短路部57c short circuit part
57d保持部57d Keeping Department
58金属膜58 metal film
58A背面电极部用金属箔58A metal foil for back electrode
59接合层59 bonding layer
60保护胶带60 protective tape
具体实施方式 Detailed ways
下面,详细说明本发明的实施方式。Embodiments of the present invention will be described in detail below.
<晶片检查用电路基板装置><Circuit board device for wafer inspection>
图1是示出根据第1发明的晶片检查用电路基板装置的一例的结构的说明用剖视图,图2是示出图1所示的晶片检查用电路基板装置的主要部分的结构的说明用剖视图。1 is an explanatory cross-sectional view showing the structure of an example of the circuit board device for wafer inspection according to the first invention, and FIG. 2 is an explanatory cross-sectional view showing the structure of a main part of the circuit board device for wafer inspection shown in FIG. 1 . .
该晶片检查用电路基板装置11用来在晶片状态下对在例如晶片上形成的所有集成电路一并进行对各个该集成电路的电气检查,如图3所示,具有由圆片状的布线板构成的基板本体12,该基板本体12的表面(图1及图2的上表面)的中央部分,设置了平面形状为正八角形的连接器装置20,该连接器装置20由固定在基板本体12表面上的支架14保持。另外,基板本体12背面的中央部分上设置了加强部件17。This wafer inspection
支架14具有适合连接器装置20的外形的形状(在图示的例子中为正八角形)的开口14K,此开口14K内容纳了连接器装置20。另外,支架14的外缘为圆形,在该支架14的外缘上,沿着圆周方向形成有台阶部14S。The
在基板本体12的表面的中央部分上,与在作为检查对象的晶片上形成的所有集成电路的被检查电极对应的多个连接用电极15按照适宜的图案形成。另外,在基板本体12背面的周边部上,如图4所示,形成引线电极部13R,在该引线电极部13R中,沿着该基板本体12的圆周方向排列地配置有多个引线电极13。引线电极13的图案是与后述的晶片检查装置中的控制器的输入输出端子的图案对应的图案。而且,各引线电极13通过内部布线(省略图示)与连接用电极电连接。On the central portion of the surface of the substrate
作为构成基板本体12的基板材料,可以使用以往众所周知的各种材料,具体例子可以举出玻璃纤维增强型环氧树脂、玻璃纤维增强型酚醛树脂、玻璃纤维增强型聚酰亚胺树脂、玻璃纤维增强型双马来酰亚胺三嗪树脂等复合树脂基板材料等。As the substrate material constituting the
连接器装置20由多个连接器单元21重叠而构成。各个连接器单元21由第1各向异性导电性弹性体片22、在该第1各向异性导电性弹性体片22上配置的复合导电性片25、在该复合导电性片25上配置的第2各向异性导电性弹性体片23、以及在该第2各向异性导电性弹性体片23上配置的由例如印刷布线板构成的间距变换板30构成。The
在这样的连接器装置20中,优选地,层叠3个以上的连接器单元21,更优选地,为5个以上。连接器单元21的个数过少时,间距变换板30必须由层数多的多层布线板构成,所以该间距变换板30的成品率低,结果晶片检查用电路基板装置11整体的制造成本增大,所以不优选。In such a
连接器单元21中的第1各向异性导电性弹性体片22以及第2各向异性导电性弹性体片23中的每一个都是如图5所示地以在厚度方向上并排取向而形成链的状态且以由该导电性粒子P形成的链在面方向上分散的状态在绝缘性的弹性高分子物质中含有表现出磁性的导电性粒子P。Each of the first anisotropic
作为形成第1各向异性导电性弹性体片22以及第2各向异性导电性弹性体片23中的每一个的弹性高分子物质,优选是具有交联结构的高分子物质。作为为了能够用于得到这种弹性高分子物质的具有硬化性的高分子物质形成材料,能够使用各种材料,作为其具体例子,可以列举聚丁二烯橡胶、天然橡胶、聚异戊二烯橡胶、苯乙烯-丁二烯共聚物橡胶、丙烯腈-丁二烯共聚物橡胶等的共轭双烯类橡胶以及它们的加氢物;苯乙烯-丁二烯-双烯嵌段共聚物橡胶、苯乙烯-异戊二烯嵌段共聚物等的嵌段共聚物橡胶以及它们的加氢物;氯丁二烯、聚氨酯橡胶、聚酯类橡胶、表氯醇橡胶、硅橡胶、乙烯-丙烯共聚物橡胶、乙烯-丙烯-双烯烃共聚物橡胶等。在这些橡胶中,从耐久性、成形加工性以及电气特性的观点出发,优选使用硅橡胶。As the elastic polymer substance forming each of the first anisotropic
作为硅橡胶,优选对液态硅橡胶进行交联或者缩合得到的硅橡胶。液态硅橡胶优选粘度是在剪切速度为10-1sec的情况下为小于等于105泊的,可以是缩合型橡胶、附加型橡胶、含有乙烯基和羟基的橡胶等中的任何一种。具体地说,可以列举二甲基硅生橡胶、甲基乙烯硅生橡胶、甲基苯乙烯基硅生橡胶等。As the silicone rubber, silicone rubber obtained by crosslinking or condensing liquid silicone rubber is preferable. Liquid silicone rubber preferably has a viscosity of 10 5 poise or less at a shear rate of 10 -1 sec, and can be any of condensation type rubber, additive type rubber, rubber containing vinyl and hydroxyl groups, and the like. Specifically, dimethyl silicone raw rubber, methylvinyl silicone raw rubber, methyl styrene-based silicone raw rubber, etc. are mentioned.
此外,优选地,硅橡胶的分子量Mw(即,标准聚苯乙烯换算重量平均分子量,以下同样)是10000~40000。此外,因为在得到的各向异性导电性弹性体片中可得到良好的耐热性,所以优选地,分子量分布指数(即,标准聚苯乙烯换算重量平均分子量Mw和标准聚苯乙烯换算数平均分子量Mn的比值Mw/Mn,以下同样)小于等于2。In addition, it is preferable that the molecular weight Mw (that is, standard polystyrene conversion weight average molecular weight, the same applies hereinafter) of the silicone rubber is 10,000 to 40,000. Furthermore, since good heat resistance can be obtained in the obtained anisotropic conductive elastomer sheet, it is preferable that the molecular weight distribution index (ie, standard polystyrene-equivalent weight average molecular weight Mw and standard polystyrene-equivalent number average The ratio Mw/Mn of the molecular weight Mn, hereinafter the same) is 2 or less.
作为在第1各向异性导电性弹性体片22以及第2各向异性导电性弹性体片23中的每一个中所含有的导电性粒子P,因为能够用后面说明的方法容易地使该粒子在厚度方向上排列取向,所以可使用表现出磁性的导电性粒子。作为这种导电性粒子的具体例子,可以列举铁、钴、镍等的具有磁性的金属粒子或者它们的合金的粒子或者含有这些金属的粒子;或者把这些粒子作为芯粒子,在该芯粒子的表面上实施金、银、钯、铑等的导电性良好的金属的镀覆的粒子;或者把非磁性金属粒子或者玻璃珠等的无机物质粒子或者聚合物粒子作为芯粒子,在该芯粒子的表面上实施镍、钴等的导电性磁性金属的镀覆的粒子等。As the conductive particles P contained in each of the first anisotropic
在这些之中,优选使用把镍粒子作为芯粒子,在其表面上实施导电性良好的镀金得到的粒子。Among these, it is preferable to use nickel particles as core particles, and the surfaces thereof are plated with gold having good conductivity.
作为在芯粒子的表面上覆盖导电性金属的方法,并没有特别限定,可以使用例如化学镀或者电解镀法、溅射法、蒸镀法等。The method of coating the surface of the core particle with the conductive metal is not particularly limited, and for example, electroless plating or electrolytic plating, sputtering, vapor deposition, and the like can be used.
作为导电性粒子P,当使用在芯粒子表面上覆盖导性金属而成的粒子的情况下,为了得到良好的导电性,在粒子表面上的导电性金属的覆盖率(导电性金属的覆盖面积相对芯粒子的表面积的比例),优选大于等于40%,更优选大于等于45%,特别优选为47~95%。As the electroconductive particle P, when using the particle that covers conductive metal on the surface of the core particle, in order to obtain good conductivity, the coverage of the electroconductive metal on the particle surface (covered area of the electroconductive metal The ratio to the surface area of the core particle) is preferably 40% or more, more preferably 45% or more, particularly preferably 47 to 95%.
此外,导电性金属的覆盖量优选为芯粒子的0.5~50质量%,更优选为2~30质量%,更优选为3~25质量%,特别优选为4~20质量%。当覆盖的导电性金属是金的情况下,该覆盖量优选为芯粒子的0.5~30质量%,更优选为2~20质量%,更优选为3~15质量%。In addition, the coating amount of the conductive metal is preferably 0.5 to 50% by mass of the core particle, more preferably 2 to 30% by mass, still more preferably 3 to 25% by mass, particularly preferably 4 to 20% by mass. When the coated conductive metal is gold, the coating amount is preferably 0.5 to 30% by mass of the core particle, more preferably 2 to 20% by mass, and still more preferably 3 to 15% by mass.
此外,导电性粒子P的数平均粒子直径优选为3~20μm,更优选为5~15μm。在该数平均粒子直径过小的情况下,在以后说明的制造方法中,使导电性粒子P在厚度方向上取向变得困难。另一方面,在该数平均粒子直径过大的情况下,难以得到分解能高的各向异性导电性弹性体片。Moreover, it is preferable that the number average particle diameter of electroconductive particle P is 3-20 micrometers, and it is more preferable that it is 5-15 micrometers. When the number average particle diameter is too small, it becomes difficult to orient electroconductive particle P in the thickness direction in the manufacturing method demonstrated later. On the other hand, when the number average particle diameter is too large, it becomes difficult to obtain an anisotropic conductive elastomer sheet having high decomposability.
此外,导电性粒子P的粒子直径分布(Dw/Dn)优选为1~10,更优选为1.01~7,更优选为1.05~5,特别优选为1.1~4。Moreover, the particle diameter distribution (Dw/Dn) of electroconductive particle P becomes like this. Preferably it is 1-10, More preferably, it is 1.01-7, More preferably, it is 1.05-5, Especially preferably, it is 1.1-4.
此外,导电性粒子P的形状并没有特别限定,但在能够在高分子物质形成材料中容易地分散这一点上,优选为球形、星形的粒子或者它们凝聚成的二次粒子。In addition, the shape of the conductive particles P is not particularly limited, but spherical, star-shaped particles, or secondary particles of these aggregates are preferable because they can be easily dispersed in the polymer substance forming material.
此外,作为导电性粒子P,能够恰当地使用其表面用硅烷偶合剂等的偶合剂和润滑剂处理过的粒子。通过用耦合剂和润滑剂处理粒子表面,得到的各向异性导电性弹性体片的耐久性提高。Moreover, as electroconductive particle P, the particle|grain whose surface was treated with the coupling agent, such as a silane coupling agent, and a lubricant can be used suitably. By treating the surface of the particles with a coupling agent and a lubricant, the durability of the obtained anisotropic conductive elastomer sheet is improved.
优选地,这种导电性粒子P在各向异性导电性弹性体片中以体积分数10~40%,特别是15~35%的比例含有。在该比例过小的情况下,有时不能得到在厚度方向上具有充分高的导电性的各向异性导电性弹性体片。另一方面,在该比例过大的情况下,存在得到的各向异性导电性弹性体片容易变成脆弱的片,有时不能得到作为各向异性导电性弹性体片的必要的弹性。Preferably, such conductive particles P are contained in the anisotropic conductive elastomer sheet at a volume fraction of 10-40%, particularly 15-35%. When the ratio is too small, an anisotropic conductive elastomer sheet having sufficiently high conductivity in the thickness direction may not be obtained. On the other hand, when the ratio is too large, the obtained anisotropic conductive elastomer sheet tends to become fragile, and the necessary elasticity as the anisotropic conductive elastomer sheet may not be obtained.
此外,第1各向异性导电性弹性体片22以及第2各向异性导电性弹性体片23各自的厚度优选为20~100μm,更优选为25~70μm。在该厚度过小的情况下,有时该各向异性导电性弹性体片不能得到充分的凹凸吸收能力。另一方面,在该厚度过大的情况下,有时该各向异性导电性弹性体片不能得到高的分解能。In addition, the respective thicknesses of the first anisotropic
第1各向异性导电性弹性体片22能够如以下那样制造。The first anisotropic
首先,如图6所示,在分别准备片状的一面侧成形部件35以及另一面侧成形部件36、在具有与作为目的的第1各向异性导电性弹性体片22的平面形状适合的形状的开口37K并具有与该第1各向异性导电性弹性体片22的厚度对应的厚度的框形的间隔物37的同时,调制在经过硬化变成弹性高分子物质的液态的高分子物质形成材料中含有导电性粒子而成的导电性弹性体用材料。First, as shown in FIG. 6 , the sheet-shaped one-
而后,如图7所示,在另一面侧成形部件36的成形面(图7中上的表面)上配置间隔物37,在另一面侧成形部件36的成形面上的间隔物37的开口37K内,涂敷经过调制的导电性弹性体用材料22B,然后,在该导电性弹性体用材料22B上把一面侧成形部件35配置成其成形面(图7中的下表面)与导电性弹性体用材料22B相接的状态。Then, as shown in FIG. 7,
以上,作为一面侧成形部件35以及另一面侧成形部件36,能够使用由聚酰亚胺树脂、聚酯树脂、丙烯酸类树脂等形成的树脂片。As described above, resin sheets made of polyimide resin, polyester resin, acrylic resin, or the like can be used as the one-surface
此外,构成一面侧成形部件35以及另一面侧成形部件36的树脂片的厚度优选为50~500μm,更优选为75~300μm。在该厚度不足50μm的情况下,有时作为成形部件不能得到必要的强度。另一方面,在该厚度超过了500μm的情况下,难以在以后说明的导电性弹性体用材料层中作用所要求的强度的磁场。In addition, the thickness of the resin sheet constituting the one-surface-
接着,如图8所示,使用由加压辊38a以及支撑辊38b组成的加压辊装置38,通过用一面侧成形部件35以及另一面侧成形部件36夹压导电性弹性体用材料22B,在该一面侧成形部件35和该另一面侧成形部件36之间形成所要求的厚度的导电性弹性体用材料层22A。在该导电性弹性体用材料层22A中,如在图9中放大示出的那样,以均匀分散的状态含有导电性粒子P。Next, as shown in FIG. 8 , the conductive elastic body material 22B is pressed by the forming
然后,在一面侧成形部件35的背面以及另一面侧成形部件36的背面上,例如配置一对电磁铁,通过使该电磁铁动作,使平行磁场在导电性弹性体用材料层22A的厚度方向上作用。其结果,在导电性弹性体用材料层22A中,分散在该导电性弹性体用材料层22A中的导电性粒子P如图10所示,一边维持在面方向上分散的状态一边在厚度方向上排列取向,由此,以在面方向上分散的状态形成分别在厚度方向上延伸的由多个导电性粒子P形成的链。Then, a pair of electromagnets are arranged, for example, on the back surface of the one-
而后,在该状态下,通过对导电性弹性体用材料层22A进行硬化处理,制造成使导电性粒子P以在厚度方向上排列地取向的状态并且以由该导电性粒子P构成的链在面方向上分散的状态下含有在弹性高分子物质中而成的第1各向异性导电性弹性体片22。Then, in this state, by hardening the conductive elastomer material layer 22A, the conductive particles P are oriented in the thickness direction and the conductive particles P are formed in a chain. The first anisotropic
以上,导电性弹性体用材料层22A的硬化处理还能够在保持作用平行磁场的状态下进行,但也可以在停止平行磁场的作用后进行。As described above, the curing treatment of the conductive elastomer material layer 22A can also be performed while maintaining the application of the parallel magnetic field, but it can also be performed after the application of the parallel magnetic field is stopped.
在导电性弹性体用材料层22A上作用的平行磁场的强度优选平均为0.02~2.5特斯拉。The strength of the parallel magnetic field acting on the conductive elastomer material layer 22A is preferably 0.02 to 2.5 Tesla on average.
导电性弹性体用材料层22A的硬化处理根据所使用的材料恰当地来选择,但是通常用加热处理进行。具体的加热温度以及加热时间考虑构成导电性弹性体用材料层22A的高分子物质用材料等的种类、导电性粒子P的移动所需要的时间等而恰当地选定。The curing treatment of the conductive elastomer material layer 22A is appropriately selected depending on the material used, but is usually performed by heat treatment. The specific heating temperature and heating time are appropriately selected in consideration of the type of polymer material constituting the conductive elastomer material layer 22A, the time required for the movement of the conductive particles P, and the like.
此外,第2各向异性导电性弹性体片23能够使用与第1各向异性导电性弹性体片22相同的方法来制造。In addition, the 2nd anisotropic
连接器单元21中的复合导电性片25,如图11所示,由按照与后述的间距变换板30的端子电极32的图案对应的图案形成有分别在厚度方向上延伸的多个贯通孔26H的绝缘性片26、以及在该绝缘性片26的各贯通孔26H中从该绝缘性片26的两个表面突出地配置的多个刚性导体27构成。The composite
各个刚性导体27由贯通插入在绝缘性片26的贯通孔26H中的圆柱形的主干部27a、和与该主干部27a的两端都一体地连结形成的在绝缘性片26的表面上露出的端子部27b构成。设置成在刚性导体27中的主干部27a的长度L比绝缘性片26的厚度d大,此外该主干部27a的直径r2比绝缘性片26的贯通孔26H的直径r1小,由此,该刚性导体27可以在绝缘性片26的厚度方向上移动。此外,在刚性导体27中的端子部27b的直径r3被设置成比绝缘性片26的贯通孔26H的直径r1大。Each
作为构成绝缘性片26的材料,能够使用液晶聚合物、聚酰亚胺树脂、聚酯树脂、聚芳酰胺树脂、聚酰胺树脂等的树脂材料;玻璃纤维增强型环氧树脂、玻璃纤维增强型聚酯树脂、玻璃纤维增强型聚酰亚胺树脂等的纤维增强型树脂材料;在环氧树脂等中含有氧化铝、氮化硼等无机材料作为填充剂的复合树脂材料等。As the material constituting the insulating
此外,在高温环境下使用晶片检查用电路基板装置11的情况下,作为绝缘性片26,优选使用线性热膨胀系数在3×10-5/K以下的,更优选是1×10-6~2×10-5/K的,特别优选是1×10-6~6×10-6/K的材料。通过使用这样的绝缘性片26,能够抑制由该绝缘性片26的热膨胀引起的刚性导体27的位置偏移。In addition, when the
此外,绝缘性片26的厚度d优选是10~200μm,更优选是15~100μm。In addition, the thickness d of the insulating
此外,绝缘性片26的贯通孔26H的直径r1优选是20~250μm,更优选是30~150μm。In addition, the diameter r1 of the through
作为构成刚性导体27的材料,能够恰当地使用具有刚性的金属材料,特别是在以后说明的制造方法中优选使用比形成在绝缘性片26上的金属薄层更难以蚀刻的材料。作为这种金属材料的具体例子,能够列举镍、钴、金、铝等单质金属或者它们的合金等。As the material constituting the
在刚性导体27中的主干部27a的直径r2优选大于等于18μm,更优选大于等于25μm。在该直径r2过小的情况下,有时不能得到该刚性导体27所需要的强度。此外,优选绝缘性片26的贯通孔26H的直径r1与在刚性导体27中的主干部27a的直径r2的差(r1-r2)大于等于1μm,更优选大于等于2μm。在该差过小的情况下,难以使刚性导体27相对绝缘性片26的厚度方向移动。The diameter r2 of the trunk portion 27a in the
在刚性导体27中的端子部27b的直径r3优选是应该连接的电极(即,间距变换板30中的端子电极32)的直径的70~150%。此外,在刚性导体27中的端子部27b的直径r3与绝缘性片26的贯通孔26H的直径r1的差(r3-r1)优选大于等于5μm,更优选大于等于10μm。在该差过小的情况下,刚性导体27有可能从绝缘性片26脱落。The diameter r3 of the
在绝缘性片26的厚度方向上的刚性导体27的可以移动距离、即在刚性导体27中的主干部27a的长度L与绝缘性片26的厚度d的差(L-d)优选是5~50μm,更优选是10~40μm。在刚性导体27的可以移动距离过小的情况下,难以在整个连接器单元中得到充分的凹凸吸收能。另一方面,在刚性导体27的可以移动距离过大的情况下,从绝缘性片26的贯通孔26H露出的刚性导体27的主干部27a的长度增大,在检查中使用时,刚性导体27的主干部27a有可能压弯或者损伤。The movable distance of the
上述的复合导电性片25例如能够如以下那样制造。The above-mentioned composite
首先,如图12所示,准备在绝缘性片26的一面上一体地层叠具有易蚀刻性的金属层28A而形成的叠层材料25B,通过对在该叠层材料25B中的金属层28A实施蚀刻处理而去除其一部分,如图13所示,按照与应该连接在金属层28A上的电极图案对应的图案形成多个开口28K。接着,如图14所示,在叠层材料25B中的绝缘性片26上,形成分别连通金属层28A的开口28K且在厚度方向上延伸的贯通孔26H。而后,如图15所示,以覆盖绝缘性片26的贯通孔26H的内壁面以及金属层28A的开口边缘的方式形成具有易蚀刻性的筒形的金属薄层28B。这样,制造具有以下部分的复合叠层材料25A:形成了分别在厚度方向上延伸的多个贯通孔26H的绝缘性片26、层叠在该绝缘性片26的一面上的具有分别连通到绝缘性片26的贯通孔26H的多个开口28K的易蚀刻性的金属层28A、以及以覆盖绝缘性片26的贯通孔26H的内壁面以及金属层28A的开口边缘的方式形成的易蚀刻性的金属薄层28B。First, as shown in FIG. 12 , a laminated material 25B formed by integrally laminating an easily-etched metal layer 28A on one side of an insulating
在以上的情况中,作为形成绝缘性片26的贯通孔26H的方法,能够利用激光加工法、钻孔加工法、蚀刻加工法等。In the above case, as a method of forming the through
作为构成金属层28A以及金属薄层28B的易蚀刻性的金属材料,能够使用铜等。Copper or the like can be used as an easily etchable metal material constituting the metal layer 28A and the thin metal layer 28B.
此外,金属层28A的厚度考虑所需要的刚性导体27的可移动距离等而设定,具体地说,优选是5~25μm,更优选是8~20μm。In addition, the thickness of the metal layer 28A is set in consideration of the required movable distance of the
此外,金属薄层28B的厚度考虑绝缘性片26的贯通孔26H的直径和需要形成的刚性导体27中的主干部27a的直径而进行设定。In addition, the thickness of the thin metal layer 28B is set in consideration of the diameter of the through-
此外,作为形成金属薄层28B的方法,能够使用化学镀法等。In addition, as a method of forming the thin metal layer 28B, an electroless plating method or the like can be used.
而后,通过对该复合叠层材料25A实施光镀处理,在绝缘性片26的贯通孔26H中的每一个上都形成刚性导体27。如果具体地说,则如图16所示,在形成于绝缘性片26的一面上的金属层28A的表面以及绝缘性片26的另一面上,都分别形成按照与在需要形成的刚性导体27中的端子部27b的图案对应的图案形成有分别与绝缘性片26的贯通孔26H连通的多个图案孔29H的光刻胶膜29。接着,把金属层28A作为共用电极实施电镀处理,从而在该金属层28A上的露出部分上淀积金属,并且在金属薄层28B的表面上淀积金属,以在绝缘性片26的贯通孔26H内以及光刻胶膜29的图案孔29H内填充金属,从而,如图17所示,形成在绝缘性片26的厚度方向上延伸的刚性导体27。Then, the
在这样地形成了刚性导体27后,通过从金属层28A的表面去除光刻胶膜29,如图18所示,金属层28A露出。而后,通过实施蚀刻处理并去除金属层28A以及金属薄层28B,可以得到图1所示的复合导电性片25。After
在连接器单元21中的间距变换板30的表面上,与作为检查对象的晶片上形成的所有的集成电路的被检查电极对应的多个连接用电极31按照适宜的图案形成。在图示的例子中,在最上面的连接器单元21的间距变换板30中,按照与作为检查对象的晶片的被检查电极的图案对应的图案进行配置。On the surface of the
在间距变换板30的背面上形成多个端子电极32。各个端子电极32基本上是按照在与该间距变换板30所属的连接器单元21的正下方配置的连接器单元21中的间距变换板30的连接用电极31的图案对应的图案配置,在最下面的连接器单元21(在基板本体12上配置的连接器单元21)的间距变换板30上是按照与基板本体12的连接用电极的图案对应的图案配置。A plurality of
然后,各连接用电极31通过内部布线(省略图示)与端子电极32电连接。Then, each
作为构成间距变换板30的布线板的材料,可以使用现有公知的各种材料,作为其具体例,可以举出:玻璃纤维增强型环氧树脂、玻璃纤维增强型酚醛树脂、玻璃纤维增强型聚酰亚胺树脂、玻璃纤维增强型双马来酰亚胺三嗪树脂等的复合树脂基板材料等。As the material of the wiring board constituting the
另外,可以利用过去公知的印刷布线板的制造方法制造间距变换板30。In addition, the
于是,在连接器装置20中,把多个连接器单元21重叠并在在厚度方向上加压的状态下用适当的固定装置(图中省略)固定。由此,连接器单元21中的间距变换板30的端子电极31通过第2各向异性导电性弹性体片23、复合导电性片25的刚性导体27和第1各向异性导电性弹性体片22,与在连接器单元21的正下方配置的连接器单元21中的间距变换板30的连接用电极31或基板本体12的连接用电极15电连接。Then, in the
根据这样的晶片检查用电路基板装置11,由于具有由具有间距变换板30的多个连接器单元21重叠而构成的连接器装置20,各个连接器单元21中的间距变换板30可以由单层布线板或层数少的多层布线板构成,可以以高的成品率比较容易地制造这样的布线板,所以能实现整个晶片检查用电路基板装置11的制造成本的降低。According to such a
另外,在邻接的间距变换板30之间以及在基板本体12与间距变换板30之间,第1各向异性导电性弹性体片22、具有刚性导体27的复合导电性片25以及第2各向异性导电性弹性体片23被层叠起来,因为复合导电性片25中的刚性导体27能够相对于绝缘性片26在其厚度方向上移动,所以第1各向异性导电性弹性体片22以及第2各向异性导电性弹性体片23通过刚性导体27移动而相互联动而压缩变形,结果能够确实地发现两者具有的凹凸吸收能,所以可以在邻接的间距变换板30之间以及在基板本体12与间距变换板30之间获得高的连接可靠性。In addition, between the adjacent
因此,可以以小的成本制造,而且,可以获得连接可靠性高的晶片检查用电路基板装置11。Therefore, it is possible to manufacture at low cost and obtain a
图19是示出根据第1发明的晶片检查用电路基板装置的另一例的俯视图。19 is a plan view showing another example of the circuit board device for wafer inspection according to the first invention.
该晶片检查用电路基板装置11可以用来在晶片状态下对在例如晶片上形成的集成电路中的部分集成电路一并进行各该集成电路的电气检查。该晶片检查用电路基板装置11中,基板本体12的连接用电极15(参照图2)、复合导电性片25中的刚性导体27(参照图2)、间距变换板30的连接用电极31和端子电极32(参照图2)都与作为检查对象的晶片上形成的集成电路中的例如纵横排列的32个(8个×4个)集成电路中的被检查电极对应地设置,除此以外,基本上是与图1所示的晶片检查用电路基板装置11相同的结构。The
根据这种晶片检查用电路基板装置11,可以获得与图1中示出的晶片检查用电路基板装置11同样的效果。According to such a
图20是示出根据第2发明的晶片检查用电路基板装置的一例的主要部分的结构的说明用剖视图。该晶片检查用电路基板装置,除了连接器装置20以外,基本上是与图1所示的晶片检查用电路基板装置相同的结构。20 is an explanatory cross-sectional view showing the configuration of a main part of an example of the circuit board device for wafer inspection according to the second invention. This circuit board device for wafer inspection basically has the same configuration as the circuit board device for wafer inspection shown in FIG. 1 except for the
在该晶片检查用电路基板装置中,构成连接器装置20的各个连接器单元21由第1各向异性导电性弹性体片22、在该第1各向异性导电性弹性体片22上配置的复合导电性片25、在该复合导电性片25上一体地设置的板状的间隔物部件24、在该间隔物部件24上配置的第2各向异性导电性弹性体片23、以及在该第2各向异性导电性弹性体片23上配置的由例如印刷布线板构成的间距变换板30构成。在此,第1各向异性导电性弹性体片22、复合导电性片25、第2各向异性导电性弹性体片23、以及间距变换板30是与图1所示的晶片检查用电路基板装置相同的结构。In this circuit board device for wafer inspection, each
间隔物部件24在与复合导电性片25中的各刚性导体27对应的位置上形成有直径比该刚性导体27的端子部27b的直径大的多个开口24H,刚性导体27的端子部刚性导体27b位于该开口24H内。The
间隔物部件24的厚度是考虑刚性导体27的可移动距离和端子部27b的厚度等而适当设定的,但优选为例如15~100μm,更优选地为25~75μm。The thickness of the
间隔物部件24的开口24H的直径,优选为刚性导体27的端子部27b的直径的1.1~8倍,更优选为其1.5~3倍。The diameter of the
作为构成间隔物部件24的材料,从能容易地形成该间隔物部件24的角度来看,可以适当地使用光刻胶材料或合适的树脂材料。As a material constituting the
使用光刻胶材料作为构成间隔物部件24的材料时,可以利用光刻法获得在绝缘性片26上一体地形成的间隔物部件24。When a photoresist material is used as the material constituting the
使用合适的树脂材料作为构成间隔物部件24的材料时,可以通过在由该树脂材料构成的膜上形成开口,通过将其接合到绝缘性片26上,获得在绝缘性片26上一体地形成的间隔物部件24。When an appropriate resin material is used as the material constituting the
根据这样的晶片检查用电路基板装置,能够得到与图1所示的晶片检查用电路基板装置11同样的效果,同时,由于在连接器单元21中的复合导电性片25和第2各向异性导电性弹性体片23之间设置有间隔物部件24,可以缓和由刚性导体27施加在第1各向异性导电性弹性体片22和第2各向异性导电性弹性体片23上的压力,结果可以防止或抑制第1各向异性导电性弹性体片22和第2各向异性导电性弹性体片23在早期发生故障。According to such a circuit board device for wafer inspection, the same effect as that of the
图21是示出根据第3发明的晶片检查用电路基板装置的一例的主要部分的结构的说明用剖视图。该晶片检查用电路基板装置,除了连接器装置20以外,其余是与图1所示的晶片检查用电路基板装置相同的结构。21 is an explanatory cross-sectional view showing the configuration of a main part of an example of the circuit board device for wafer inspection according to the third invention. This circuit board device for wafer inspection has the same structure as the circuit board device for wafer inspection shown in FIG. 1 except for the
在该晶片检查用电路基板装置中,构成连接器装置20的各个连接器单元21由各向异性导电性弹性体片23a、以及在该各向异性导电性弹性体片23a上配置的由例如印刷布线板构成的间距变换板30构成。在此,各向异性导电性弹性体片23a是与图1所示的晶片检查用电路基板装置中的第1各向异性导电性弹性体片22相同的结构。间距变换板30也是与图1所示的晶片检查用电路基板装置中的间距变换板相同的结构。In this circuit board device for wafer inspection, each
根据这样的晶片检查用电路基板装置11,由于具有由具有间距变换板30的多个连接器单元21重叠而构成的连接器装置20,各个连接器单元21中的间距变换板30可以由单层布线板和层数少的多层布线板构成,可以以高的成品率比较容易地制造这样的布线板,所以能实现整个晶片检查用电路基板装置11的制造成本的降低。According to such a
[探针卡][Probe card]
图22示出根据本发明的探针卡的第1例的结构的说明用剖视图,该第1例的探针卡10被用来在晶片状态下对在例如晶片上形成的所有集成电路一并进行各个该集成电路的电气检查,由图1所示的晶片检查用电路基板装置11和在该晶片检查用电路基板11的一面(图22中的上表面)上配置的接触部件39构成。接触部件39由各向异性导电性连接器40、和在各向异性导电性连接器40上配置的片状探针50构成。22 is a cross-sectional view illustrating the structure of the first example of the probe card according to the present invention. The
图23是第1例的探针卡10中的各向异性导电性连接器40的俯视图,图24是把图23所示的各向异性导电性连接器40的主要部分放大后示出的说明用剖视图。FIG. 23 is a plan view of the anisotropic
各向异性导电性连接器40具有形成有分别在厚度方向上贯穿的多个开口42的圆片状框架板41。该框架板41的开口42与作为检查对象的晶片上形成的所有集成电路中的形成了被检查电极的电极区域的图案对应地形成。在框架板41中,在厚度方向上具有导电性的多个弹性各向异性导电膜43被设置为以分别堵住一个开口42的方式被该框架板41的开口边缘部支持的状态。The anisotropic
各弹性各向异性导电膜43的基底材料由弹性高分子物质构成,具有:在厚度方向上延伸的多个连接用导电部44、和由形成在该连接用导电部44的每一个的周围且使该连接用导电部44的每一个都互相绝缘的绝缘部45构成的功能部46;该功能部46被配置成位于框架板41的开口42内。该功能部46中的连接用导电部44按照与作为检查对象的晶片上形成的集成电路中的电极区域的被检查电极的图案对应的图案进行设置。The base material of each elastic anisotropic
在功能部46周围形成由框架板41的开口边缘部固定支持的被支持部48,与该功能部46连续形成为一体。具体来说,此例中的被支持部48形成为两股,以将框架板41的开口边缘部夹住的方式、以紧贴的状态进行固定支持。A supported
在弹性各向异性导电膜43的功能部46中的连接用导电部44中,以在厚度方向上排列的方式进行取向的状态紧密地包含了具有磁性的导电性粒子P。与之相对,绝缘部45完全不含有或者几乎不含有导电性粒子P。In the
另外,图示的例子中,在弹性各向异性导电膜43中的功能部46的两面上,形成从连接用导电部44及其周边部分所在的地方之外的表面突出的突出部47。In addition, in the illustrated example,
框架板41的厚度根据其材质而不同,优选为20~600μm,更优选为40~400μm。The thickness of the
此厚度不足20μm时,使用各向异性导电性连接器40时得不到必要的强度,容易使耐久性变低,而且得不到可维持该框架板41的形状的程度的刚性,各向异性导电性连接器40的操作性变低。另外,当厚度超过600μm时,开口42上形成的弹性各向异性导电膜43的厚度过大,难以得到在连接用导电部44上的良好导电性以及在相邻的连接用导电部44之间的绝缘性。When the thickness is less than 20 μm, the required strength cannot be obtained when the anisotropic
框架板41的开口42的面方向的形状和尺寸根据作为检查对象的晶片的被检查电极的尺寸、间距以及图案而设计。The shape and size of the
构成框架板41的材料并没有特别限定,只要是该框架板41不易变形、具有可稳定维持其形状的程度的刚性的材料即可,例如可以使用金属材料、陶瓷材料、树脂材料等各种材料,框架板41由例如金属材料构成时,在该框架板41的表面上也可以形成绝缘性覆盖膜。The material constituting the
构成框架板41的金属材料的具体例子,可以列举例如铁、铜、镍、钛、铝等金属或者组合这些金属中的两种以上而形成的合金或合金钢等。Specific examples of metal materials constituting the
另外,构成框架板41的材料优选使用线热膨胀系数为3×10-5/K以下的材料,更优选-1×10-7~1×10-5/K的,特别优选1×10-6~8×10-6/K。In addition, the material constituting the
作为这样的材料的具体例子,可以举出因瓦合金(invar)等的因瓦型合金、埃林瓦合金(elinvar)等埃林瓦型合金、超因瓦合金(super invar)、科伐合金(covar)、42合金等合金或者合金钢等。Specific examples of such materials include invar-type alloys such as invar, elinvar-type alloys such as elinvar, super invar, and kovar alloys. (covar), 42 alloy and other alloys or alloy steel, etc.
弹性各向异性导电膜43的总厚度(图示的例中为连接用导电部44的厚度)优选为50~3000μm,更优选为70~2500μm,特别优选为100~2000μm。当该厚度在50μm以上时,能够可靠地得到具有足够强度的弹性的各向异性导电膜43。另外,当该厚度在3000μm以下时,能够可靠地得到具有所需导电特性的连接用导电部43。The total thickness of the elastic anisotropic conductive film 43 (thickness of the connecting
突出部47的突出高度的总和优选为该突出部47的厚度的10%以上,更优选为20%以上。通过形成具有上述突出高度的突出部47,能够以小的加压力充分压缩连接用导电部44,所以能够可靠地得到良好的导电性。The sum of the protrusion heights of the
另外,突出部47的突出高度优选为该突出部47的最短宽度或者直径的100%以下,更优选为70%以下。通过形成具有上述突出高度的突出部47,由于该突出部47在被加压时不会压弯,所以能够可靠地得到期望的导电性。In addition, the protruding height of the protruding
另外,被支持部48的厚度(图示的例中为两股部分中的其中一股的厚度)优选为5~600μm,更优选为10~500μm,特别优选为20~400μm。In addition, the thickness of the supported portion 48 (thickness of one of the two parts in the illustrated example) is preferably 5 to 600 μm, more preferably 10 to 500 μm, particularly preferably 20 to 400 μm.
另外,被支持部48并不是必须形成为两股状,也可以只固定在框架板41的一面上。In addition, the supported
构成弹性各向异性导电膜43的弹性高分子物质和构成连接用导电部44的导电性粒子P可以采用作为构成上述第1各向异性导电性弹性体片22和第2各向异性导电性弹性体片23的弹性高分子物质和导电性粒子P所例示的物质。The elastic polymer material constituting the elastic anisotropic
优选地,在功能部46的连接用导电部44中的导电性粒子P的含有比例以体积分率为10~60%、更好的是15~50%的比例。此比例不足10%时,有时会得不到电阻值足够小的连接用导电部44。另外,此比例超过60%时,得到的连接用导电部44容易变得脆弱,有时得不到作为连接用导电部44所必需的弹性。Preferably, the content ratio of the electroconductive particle P in the
这样的各向异性导电性连接器40可以由例如日本特开2002-334732号公报中记载的方法来制造。Such an anisotropic
图25是示出第1例的探针卡10中的片状探针50的俯视图,图26和图27是把片状探针50的接点膜放大后示出的俯视图和说明用剖视图。25 is a plan view showing the
如图28所示,片状探针50具有由形成了多个开口52的金属构成的圆形框架板51。该框架板51的开口52与作为检查对象的晶片上形成的所有集成电路中的形成了被检查电极的电极区域的图案对应地形成。As shown in FIG. 28 , the
作为构成框架板51的金属,可以使用铁、铜、镍、钛或它们的合金或合金钢等,但在后面的制造方法中,从容易通过蚀刻处理形成开口52的角度出发,优选为42合金、因瓦合金、科伐合金等的铁镍合金钢。As the metal constituting the
另外,框架板51的线热膨胀系数优选为3×10-5/K以下、更优选为-1×10-7~1×10-5/K,特别优选为1×10-6~8×10-6/K。In addition, the linear thermal expansion coefficient of the
作为构成这样的框架板51的材料的具体例子,可以举出因瓦合金等的因瓦型合金、埃林瓦合金等埃林瓦型合金、超因瓦合金、科伐合金、42合金等合金或者合金钢等。Specific examples of the material constituting such a
框架板51的厚度优选为10~200μm,更优选为10~150μm。The thickness of the
当其厚度过小时,有时得不到作为支持接点膜的框架板所必要的强度。另外,其厚度过大时,难以在后面的制造方法中通过蚀刻处理以高的尺寸精度形成开口52。When the thickness is too small, the strength required as a frame plate supporting the contact film may not be obtained. In addition, when the thickness is too large, it is difficult to form the
金属膜58隔着接合层59一体地形成在框架板51的一面上,在该金属膜58上以堵塞该框架板51的一个开口52的方式配置并固定多个接点膜55,由此各个接点膜55隔着接合层59和金属膜58地被支撑在框架板51上。另外,在框架板51的另一面上,圆形的柱状保持部件54沿该框架板51的周缘部配置在框架板51的另一面上,且利用该保持部件54保持框架板51。A
金属膜58用与后述的电极结构体57中的背面电极部57b相同的材料构成。The
另外,作为构成接合层59的材料,可以使用硅酮橡胶类粘接剂、环氧类粘接剂、聚酰亚胺类粘接剂、氰基丙烯酸酯类粘接剂、聚氨酯类粘接剂等。In addition, as a material constituting the
构成保持部件54的材料,可以使用因瓦合金、超因瓦合金等因瓦型合金、埃林瓦合金等埃林瓦型合金、科伐合金、42合金等低热膨胀金属材料或者氧化铝、碳化硅、氮化硅等陶瓷材料等。As the material constituting the holding
各个接点膜55具有柔软的绝缘膜56,在该绝缘膜56中,由沿该绝缘膜56的厚度方向上延伸的金属构成的多个电极结构体57按照与在作为检查对象的晶片上形成的集成电路的电极区域中的被检查电极的图案对应的图案,在该绝缘膜56的面方向上相互分离地配置,该接点膜55被配置成各个电极结构体57位于框架板51的开口52内。Each
各电极结构体57的结构为:从绝缘膜56的表面露出的突起状的表面电极部57a与从绝缘膜56的背面露出的板状的背面电极部57b通过在绝缘膜56的厚度方向上贯通地伸出的短路部57c被连接为一体。Each
作为构成绝缘膜56的材料,只要是具有绝缘性的柔软的材料即可,没有特别限定,可以使用聚酰亚胺、液晶聚合物等的树脂材料或它们的复合材料,但在后述的制造方法中,从可以通过蚀刻法容易地形成电极结构体用的贯通孔的角度来看,优选地,使用聚酰亚胺。The material constituting the insulating
作为构成绝缘膜56的其它材料,可以使用网(mesh)或无纺布,或者在它们中含浸了树脂或弹性高分子物质而得到的材料。作为形成这样的网或无纺布的纤维,可以使用芳纶纤维、聚乙烯纤维、聚丙烯酸酯纤维、尼龙纤维、特富龙(注册商标)纤维等的氟树脂纤维、聚酯纤维等的有机纤维。通过使用这样的材料作为构成绝缘膜56的材料,由于即使以小的间距配置电极结构体57,接点膜55整体的柔软性也不会大幅度降低,所以即使电极结构体57的突出高度和被检查电极的突出高度有起伏,由于接点膜55具有柔软性也能充分地吸收该起伏,所以可以可靠地实现对各被检查电极的稳定的电连接。As another material constituting the insulating
另外,绝缘膜56的厚度只要不损害该绝缘膜56的柔软性即可,没有特别限制,但优选为5~150μm,更优选为7~100μm,更优选为10~50μm。The thickness of the insulating
作为构成电极结构体57的材料,可以使用镍、铁、铜、金、银、钯、钴、钨、铑或者它们的合金或合金钢等。作为电极结构体57,可以是整体由单一的金属构成的,也可以是由两种以上的金属的合金或合金类构成的,或由两种以上的金属层叠而构成的。As a material constituting the
另外,在对表面上形成了氧化膜的被检查电极进行电气检查时,使被检查电极与片状探针50的电极结构体57接触,需要由电极结构体57的表面电极部57a来破坏被检查电极表面的氧化膜,以实现该电极结构体57与被检查电极的电连接。因此,优选地,电极结构体57的表面电极部57a具有可以容易地破坏氧化膜的程度的硬度。为了得到这样的表面电极部57a,可以将硬度高的粉末物质含在构成表面电极部57a的金属中。In addition, when the electrode to be inspected with an oxide film formed on its surface is electrically inspected, the electrode to be inspected is brought into contact with the
作为这样的粉末物质,可以使用金刚石粉末、氮化硅、碳化硅、陶瓷、玻璃等,由于含有适量的这些非导电性粉末物质,可以不损坏电极结构体57的导电性,而利用电极结构体57的表面电极部57a破坏形成在被检查电极表面上的氧化膜。As such powdery substances, diamond powder, silicon nitride, silicon carbide, ceramics, glass, etc. can be used. Since an appropriate amount of these non-conductive powdery substances is contained, the conductivity of the
另外,为了容易地破坏被检查电极表面的氧化膜,电极结构体57中的表面电极部57a的形状可以做成锐利的突起状,也可以在表面电极部57a的表面上形成微细的凹凸。In addition, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 57a in the
在接点膜55上的电极结构体57的间距p根据作为检查对象的晶片的被检查电极的间距来设定,例如优选为40~250μm,更优选为40~150μm。The pitch p of the
这里,“电极结构体的间距”是指邻接的电极结构体间的中心间距,且是指最短的距离。Here, the "pitch between electrode structures" refers to the center-to-center distance between adjacent electrode structures, and refers to the shortest distance.
在电极结构体57中,表面电极部57a中的突出高度相对直径R的比优选为0.2~3,更优选为0.25~2.5。通过满足这样的条件,即使是被检查电极由于间距小而变得微小,也可以容易地形成与该被检查电极的图案对应的图案的电极结构体57,可以可靠地获得对该晶片的稳定的电连接状态。In the
另外,表面电极部57a的直径R优选为短路部57c的直径r的1~3倍,更优选为1~2倍。In addition, the diameter R of the surface electrode portion 57a is preferably 1 to 3 times, more preferably 1 to 2 times, the diameter r of the
另外,表面电极部57a的直径R优选为该电极结构体57的间距p的30~75%,更优选为40~60%。In addition, the diameter R of the surface electrode portion 57a is preferably 30 to 75% of the pitch p of the
另外,背面电极部57b的外径D只要比短路部57c的直径r大且比电极结构体57的间距p小即可,但优选尽可能地大的,由此,可以可靠地实现对于各向异性导电性连接器40的稳定的电连接。In addition, the outer diameter D of the
另外,短路部57c的直径r优选为该电极结构体57的间距p的15~75%,更优选为20~65%。In addition, the diameter r of the short-
如果说明电极结构体57的具体尺寸,则表面电极部57a的突出高度从能够实现对被检查电极的稳定的电连接的角度来看,优选为15~50μm,更优选为15~30μm。Regarding the specific dimensions of the
表面电极部57a的直径R是考虑了上述的条件和被检查电极的直径等而设定的,例如为30~200μm,优选为35~150μm。The diameter R of the surface electrode portion 57a is set in consideration of the above-mentioned conditions and the diameter of the electrode to be inspected, and is, for example, 30 to 200 μm, preferably 35 to 150 μm.
短路部57c的直径r从可以获得足够高的强度的角度来看,优选为10~120μm,更优选为15~100μm。The diameter r of the short-
背面电极部57b的厚度从可以获得足够高的强度且优异的重复耐久性的角度来看,优选为15~150μm,更优选为20~100μm。The thickness of the
在电极结构体57中的表面电极部57a及背面电极部57b上,根据需要,也可以形成覆盖膜。例如被检查电极由焊锡材料构成时,从防止该锡焊材料扩散的观点来看,在表面电极部57a上形成由银、钯、铑等耐扩散性金属构成的覆盖膜是优选的。On the front electrode portion 57 a and the
并且,片状探针50以使各电极结构体57中的背面电极部57b与各向异性导电性连接器40的连接用导电部44对接进行配置,使保持部件54与晶片检查用电路基板11上的支架14的台阶部14S相卡合而进行固定。In addition, the
这样的片状探针50可以由下述方法制造。Such a
首先,如图29所示,准备在由与需要形成的电极结构体57中的背面电极部57b相同的材料构成的背面电极部用金属箔58A的一面上一体地层叠绝缘膜用树脂片56A而形成的圆形的层叠体55A。First, as shown in FIG. 29, a resin sheet 56A for an insulating film is prepared by integrally laminating a resin sheet 56A for an insulating film on one side of a metal foil 58A for a back electrode part made of the same material as the
另一方面,如图30所示,制作按照在作为检查对象的晶片上的集成电路的形成有被检查电极的电极区域的图案形成有多个开口52的圆形的框架板51,在该框架板51的一面上沿其周缘部配置保护胶带60。在此,作为形成框架板51的开口52的方法,可以利用蚀刻法等。On the other hand, as shown in FIG. 30, a
然后,如图31所示,在层叠体55A中的背面电极部用金属箔58A的另一面上形成由例如粘接性树脂构成的接合层59,如图32所示,粘接设置了保护胶带60的框架板51。然后,如图33所示,在层叠体55A中的绝缘膜用树脂片56A上按照与需要形成的电极结构体57的图案对应的图案形成分别在厚度方向上贯通的多个贯通孔57H。在此,作为在绝缘膜用树脂片56A中形成贯通孔57H的方法,可以利用激光加工、蚀刻加工等。Then, as shown in FIG. 31 , a
然后,用保护胶带(图中省略)覆盖层叠体55A中的框架板51的背面和开口52,通过对层叠体55A中的背面电极部用金属箔58A实施镀覆处理,如图34所示,在绝缘膜用树脂片56A中形成的各贯通孔57H内形成与该背面电极部用金属箔58A一体地连接的短路部57c,且形成与该短路部57c一体地连接的、从绝缘膜用树脂片56A的表面突出的表面电极部57a。然后,从框架板51的背面去除保护胶带,如图35所示,通过从接合层59中的框架板51的开口52去除露出的部分,露出背面电极部用金属箔58A的一部分,通过对该背面电极部用金属箔58A中的露出部分进行蚀刻处理,如图36所示,形成分别与短路部57c一体地连接的多个背面电极部57b,由此形成电极结构体57。然后,通过对绝缘膜用树脂片56A实施蚀刻处理以去除其一部分,如图37所示,形成相互独立的多个绝缘膜56。由此,在绝缘膜56上形成配置有在其厚度方向上贯通并伸出的多个电极结构体57的多个接点膜55。Then, the back surface of the
接着,从框架板51的周缘部去除保护胶带60(参照图30),然后通过在框架板51的背面上的周缘部上配置并固定保护部件,获得图25~27所示的片状探针50。Next, the protective tape 60 (refer to FIG. 30 ) is removed from the peripheral portion of the
根据上述第1例的探针卡10,由于具有图1所示的晶片检查用电路基板装置11,所以能以小的成本制造该探针卡10,且获得高的连接可靠性。According to the
图38是示出根据本发明的探针卡的第2例的结构的说明用剖视图。Fig. 38 is an explanatory sectional view showing the structure of a second example of the probe card according to the present invention.
该第2例的探针卡10,用于在晶片状态下对在例如晶片上形成的集成电路中的一部分集成电路一并进行各个该集成电路的电气检查,由图19所示的晶片检查用电路基板装置11和在该晶片检查用电路基板11的一面(图38中的上表面)上配置的接触部件39构成。接触部件39由各向异性导电性连接器40和在各向异性导电性连接器40上配置的片状探针50构成。The
各向异性导电性连接器40,如图39所示,具有形成有分别在厚度方向上贯穿的多个开口42的矩形的板状框架板41。该框架板41的开口42与作为检查对象的晶片上形成的集成电路中的例如32个(8个×4个)集成电路中的形成有被检查电极的电极区域图案对应地形成。在框架板41中,在厚度方向上具有导电性的多个弹性各向异性导电膜43被设置为以分别堵住一个开口42的方式被该框架板41的开口边缘部支持的状态。各向异性导电性连接器40中的其它结构与第1例的探针卡10中的各向异性导电性连接器40相同(参照图24)。The anisotropic
片状探针50具有如图40所示的形成有多个开口52的由金属构成的框架板51。该框架板51的开口52与作为检查对象的晶片上形成的集成电路中的例如32个(8个×4个)集成电路中的形成有被检查电极的电极区域图案对应地形成。该片状探针50中的其它结构与第1例的探针卡10中的片状探针50相同(参照图26和27)。The
另外,片状探针50可以与第1例的探针卡10中的片状探针50一样地制造。In addition, the
并且,片状探针50使各电极结构体57中的背面电极部57b以与各向异性导电性连接器40的连接用导电部44对接的方式进行配置,使保持部件54与晶片检查用电路基板11中的支架14的台阶部14S卡合而固定。In addition, the
根据上述第2例的探针卡10,由于具有图19所示的晶片检查用电路基板装置11,所以能以小的成本制造该探针卡10,且可以获得高的连接可靠性。According to the
[晶片检查装置][Wafer inspection device]
图41是示出根据本发明的晶片检查装置的第1例结构的概况的说明用剖视图,图42是将第1例的晶片检查装置的主要部分结构放大后示出的说明用剖视图。该第1例的晶片检查装置用于在晶片状态下对于晶片上形成的所有集成电路中的每一个一并进行该集成电路的电气检查例如预烧试验。41 is an explanatory cross-sectional view showing an outline of the structure of a first example of a wafer inspection apparatus according to the present invention, and FIG. 42 is an explanatory cross-sectional view showing an enlarged configuration of a main part of the wafer inspection apparatus of the first example. The wafer inspection apparatus of the first example is used to collectively perform an electrical inspection of the integrated circuits, such as a burn-in test, for each of all the integrated circuits formed on the wafer in the state of the wafer.
第1例的晶片检查装置具有控制器2,用于进行作为检查对象的晶片6的温度控制、进行晶片6的检查的电源供给、信号的输入输出控制、检测来自晶片6的输出信号后判断该晶片6中的集成电路是否良好。如图43所示,控制器2在其下面具有多个输入输出端子3沿着圆周方向设置的输入输出端子部3R。The wafer inspection apparatus of the first example has a
在控制器2的下方设置了第1例的探针卡10,晶片检查用电路基板装置11中的第1基板本体12上形成的各引线电极13被配置成以与该控制器2的输入输出端子3相对的方式由适当的保持手段保持的状态。The
控制器2的输入输出端子部3R与探针卡10中的晶片检查用电路基板11的引线电极部13R之间设置了连接器4,通过该连接器4将晶片检查用电路基板装置11的各引线电极13与控制器2的各输入输出端子3电连接。图示的例子的连接器4由能够在长度方向上弹性压缩的多个导电针4A和支持这些导电针4A的支持部件4B构成,导电针4A被设置成位于控制器2的输入输出端子3与在第1基板元件12上形成的引线电极13之间。A
在探针卡10的下方设置有承载作为检查对象的晶片6的晶片载台5。A
在上述晶片检查装置中,晶片载台5上放置了作为检查对象的晶片6,接着从下方对探针卡10进行加压,其片状探针50的电极结构体57中的各表面电极部57a与晶片6的各被检查电极7接触,并且,通过该表面电极部57a的每一个对晶片6的各被检查电极7加压。在此状态下,各向异性导电性连接器40的弹性各向异性导电膜43中的各连接用导电部44被晶片检查用电路基板装置11的连接用电极31和片状探针50的电极结构体57的背面电极部57b夹着,并在厚度方向上被压缩,由此,该连接用导电部44在其厚度方向上形成导电通路,其结果,晶片6的被检查电极7与晶片检查用电路基板11的连接用电极31之间实现电连接。然后,通过晶片载台5将晶片6加热到规定温度,在此状态下,对该晶片6中的多个集成电路中的每一个进行所需的电气检查。In the wafer inspection apparatus described above, the
根据上述第1例的晶片检查装置,由于具有上述第1例的探针卡10,可以实现检查成本的降低,能够对该晶片6进行可靠性高的检查。According to the wafer inspection apparatus of the above-mentioned first example, since the
图44是示出根据本发明的晶片检查装置的第2例的结构的概况的说明用剖视图,该第1晶片检查装置用于在晶片状态下对晶片上形成的多个集成电路中的每一个一并进行该集成电路的电气检查例如探测试验。44 is an explanatory cross-sectional view showing an outline of the structure of a second example of a wafer inspection apparatus according to the present invention, the first wafer inspection apparatus for inspecting each of a plurality of integrated circuits formed on a wafer in a wafer state. An electrical inspection such as a probe test of the integrated circuit is also performed.
该第2例的晶片检查装置,除了用第2例的探针卡10代替第1例的探针卡10以外,结构与第1例的晶片检查装置基本相同。The wafer inspection apparatus of the second example has basically the same structure as the wafer inspection apparatus of the first example, except that the
在该第2例的晶片检查装置中,将探针卡10电连接到从晶片6上形成的所有集成电路中选择出的例如32个集成电路的被检查电极7,以进行检查,然后,将探针卡10电连接到从其他集成电路中选择出的多个集成电路的被检查电极7,以进行检查,通过重复这个工序,对晶片6上形成的所有集成电路进行探测试验。In the wafer inspection apparatus of the second example, the
根据上述第2例的晶片检查装置,通过第2例的探针卡10,实现对作为检查对象的晶片6的被检查电极7的电连接,所以能够可靠地实现对晶片6的良好电连接状态,而且能够稳定维持对晶片6的良好的电连接状态,因此,在晶片6的探测试验中,能够可靠地进行对该晶片6的所需的电气检查。According to the wafer inspection apparatus of the above-mentioned second example, the electrical connection to the electrode 7 to be inspected of the
根据上述第1例的晶片检查装置,由于具有上述第1例的探针卡10,可以实现检查成本的降低,而且能够对该晶片6进行可靠性高的检查。According to the wafer inspection apparatus of the above-mentioned first example, since the
本发明并不限定于上述实施方式,如下述,可以有各种变更。The present invention is not limited to the above-described embodiments, and various modifications are possible as described below.
(1)在图19所示的晶片检查用电路基板装置中,连接器装置20中的各个连接器单元也可以由第1各向异性导电性弹性体片、在该第1各向异性导电性弹性体片上配置的复合导电性片、在该复合导电性片上设置的板状的间隔物部件、在该间隔物部件上配置的第2各向异性导电性弹性体片、以及在该第2各向异性导电性弹性体片上配置的由在表面具有连接用电极且在背面具有端子电极的布线板构成的间距变换板构成(参照图20);也可以由各向异性导电性弹性体片、和在该各向异性导电性弹性体片上配置的由在表面具有连接用电极且在背面具有端子电极的布线板构成的间距变换板构成(参照图21)。(1) In the circuit board device for wafer inspection shown in FIG. 19 , each connector unit in the
(2)在图22中所示的探针卡10中,晶片检查用电路基板装置11也可以是图20所示的结构,也可以是图21所示的结构。另外,在图37所示的探针卡10中,晶片检查用电路基板装置11也可以具有上述(1)记载的连接器装置20。(2) In the
(3)在探针卡10的各向异性导电性连接器40中,不是必须要在弹性各向异性导电膜43上形成突出部,弹性各向异性导电膜43的整个表面也可以是平坦的。(3) In the anisotropic
(4)在各向异性导电性连接器40中的弹性各向异性导电膜43上,除了按照与被检查电极的图案对应的图案形成的连接用导电部44之外,还可以形成不与被检查电极电连接的非连接用导电部。(4) On the elastic anisotropic
(5)片状探针50可以是具有形成了单一开口的绝缘性片和以堵住该绝缘性片的开口的方式设置的绝缘膜的结构;也可以是具有形成了多个开口的绝缘性片和以分别堵住每个开口的方式设置的多个绝缘膜的结构;或者是具有形成了多个开口的绝缘性片、以堵住该绝缘性片的一个开口的方式设置的1个或2个以上的绝缘膜、以及以堵住绝缘性片的2个以上开口的方式设置的1个或2个以上的绝缘膜的结构。(5) The
(6)作为接触部件,不限于由各向异性导电性连接器和片状探针构成的平面型接触部件,可以使用悬臂型的接触部件、垂直针型的接触部件等。(6) The contact member is not limited to a planar contact member composed of an anisotropic conductive connector and a chip probe, and a cantilever-type contact member, a vertical pin-type contact member, and the like can be used.
(7)在图41所示的晶片检查装置或图44所示的晶片检查装置中,探针卡10也可以具有上述(2)记载的晶片检查用电路基板装置。(7) In the wafer inspection device shown in FIG. 41 or the wafer inspection device shown in FIG. 44 , the
(8)使晶片检查装置中的控制器2与晶片检查用电路基板装置11电连接的连接器4,并不限定于图43所示的连接器,可以使用各种结构。(8) The
Claims (13)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005369683 | 2005-12-22 | ||
| JP369683/2005 | 2005-12-22 | ||
| JP025698/2006 | 2006-02-02 | ||
| JP262824/2006 | 2006-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101346813A true CN101346813A (en) | 2009-01-14 |
Family
ID=40248013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800485504A Pending CN101346813A (en) | 2005-12-22 | 2006-12-20 | Circuit board device for wafer inspection, probe card, and wafer inspection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101346813A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680747A (en) * | 2011-03-07 | 2012-09-19 | 日本特殊陶业株式会社 | Wiring board for electronic part inspecting device and its manufacturing method |
| CN104350588A (en) * | 2012-04-09 | 2015-02-11 | 高级查询系统公司 | Translators coupleable to opposing surfaces of microelectronic substrates for testing, and associated systems and methods |
| US8981237B2 (en) | 2011-03-07 | 2015-03-17 | Ngk Spark Plug Co., Ltd. | Wiring board for electronic parts inspecting device and its manufacturing method |
| CN105008940A (en) * | 2013-02-19 | 2015-10-28 | 株式会社Isc | Test socket with high-density conductive part |
| CN110940907A (en) * | 2018-09-24 | 2020-03-31 | 台湾积体电路制造股份有限公司 | Semiconductor wafer test system |
| CN111366839A (en) * | 2020-03-28 | 2020-07-03 | 深圳中科系统集成技术有限公司 | Probe adapter plate for wafer test and manufacturing method thereof |
| CN115176388A (en) * | 2020-02-26 | 2022-10-11 | 株式会社Isc | Connector for electrical connection |
| CN115349166A (en) * | 2020-03-19 | 2022-11-15 | 日本电产理德股份有限公司 | Contact terminal, inspection jig, and inspection device |
-
2006
- 2006-12-20 CN CNA2006800485504A patent/CN101346813A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8981237B2 (en) | 2011-03-07 | 2015-03-17 | Ngk Spark Plug Co., Ltd. | Wiring board for electronic parts inspecting device and its manufacturing method |
| US9170274B2 (en) | 2011-03-07 | 2015-10-27 | Ngk Spark Plug Co., Ltd. | Wiring board for electronic parts inspecting device and its manufacturing method |
| CN102680747A (en) * | 2011-03-07 | 2012-09-19 | 日本特殊陶业株式会社 | Wiring board for electronic part inspecting device and its manufacturing method |
| CN104350588B (en) * | 2012-04-09 | 2017-04-05 | 全斯莱瑞公司 | The system and method that may be connected to the transducer and correlation for test of the opposed surface of microelectronic substrate |
| CN104350588A (en) * | 2012-04-09 | 2015-02-11 | 高级查询系统公司 | Translators coupleable to opposing surfaces of microelectronic substrates for testing, and associated systems and methods |
| CN105008940B (en) * | 2013-02-19 | 2018-01-09 | 株式会社Isc | Test socket with high-density conductive part |
| CN105008940A (en) * | 2013-02-19 | 2015-10-28 | 株式会社Isc | Test socket with high-density conductive part |
| CN110940907A (en) * | 2018-09-24 | 2020-03-31 | 台湾积体电路制造股份有限公司 | Semiconductor wafer test system |
| CN110940907B (en) * | 2018-09-24 | 2024-11-08 | 台湾积体电路制造股份有限公司 | Semiconductor wafer testing system and testing method for integrated chip |
| CN115176388A (en) * | 2020-02-26 | 2022-10-11 | 株式会社Isc | Connector for electrical connection |
| CN115349166A (en) * | 2020-03-19 | 2022-11-15 | 日本电产理德股份有限公司 | Contact terminal, inspection jig, and inspection device |
| CN115349166B (en) * | 2020-03-19 | 2025-09-26 | 日本电产理德股份有限公司 | Contact terminals, inspection jigs, and inspection devices |
| CN111366839A (en) * | 2020-03-28 | 2020-07-03 | 深圳中科系统集成技术有限公司 | Probe adapter plate for wafer test and manufacturing method thereof |
| CN111366839B (en) * | 2020-03-28 | 2022-04-12 | 深圳中科系统集成技术有限公司 | Probe adapter plate for wafer test and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI416111B (en) | To the electrically conductive connector and to the different conductive connector device | |
| JP4930574B2 (en) | Anisotropic conductive connector device, manufacturing method thereof, and circuit device inspection device | |
| US7821283B2 (en) | Circuit board apparatus for wafer inspection, probe card, and wafer inspection apparatus | |
| CN100539304C (en) | Inspection equipment for anisotropic conductive connectors and production processes and circuit devices | |
| KR101030360B1 (en) | Inspection device for anisotropic conductive connector device and circuit device | |
| US20070205783A1 (en) | Sheet-Like Probe, Method Of Producing The Probe, And Application Of The Probe | |
| WO2004021516A1 (en) | Anisotropic conductive sheet, its manufacturing method, and its application | |
| JP3573120B2 (en) | Anisotropic conductive connector, method of manufacturing the same, and application product thereof | |
| JP2002289277A (en) | Anisotropic conductive connector and its applied products | |
| CN100539305C (en) | Composite conductive thin plate and manufacturing method thereof | |
| CN101218514B (en) | Connector for measuring resistance and resistance measuring device and measuring method of circuit board | |
| CN101346813A (en) | Circuit board device for wafer inspection, probe card, and wafer inspection device | |
| JP4507644B2 (en) | Anisotropic conductive connector device, manufacturing method thereof, and circuit device inspection device | |
| JP2006040632A (en) | Anisotropic conductive connector and manufacturing method thereof, adapter device and circuit device electrical inspection device | |
| JP4725318B2 (en) | COMPOSITE CONDUCTIVE SHEET AND METHOD FOR MANUFACTURING THE SAME, ANISOTROPIC CONDUCTIVE CONNECTOR, ADAPTER DEVICE, AND ELECTRIC INSPECTION DEVICE FOR CIRCUIT DEVICE | |
| JP3928607B2 (en) | Anisotropic conductive sheet, its production method and its application | |
| CN101180545A (en) | Chip detector for wafer inspection and its application | |
| JP2005300279A (en) | Anisotropic conductive connector device, manufacturing method thereof, and circuit device inspection device | |
| KR20070072572A (en) | Probe elements for wafer inspection, probe cards and wafer inspection devices for wafer inspection | |
| WO2008015967A1 (en) | Composite conductive sheet, method for manufacturing the same and application of the same | |
| WO2008041511A1 (en) | Anisotropic conductive connector, adapter device, and device for electrically inspecting circuit device | |
| JP2007192799A (en) | Circuit board device for wafer inspection, probe card, and wafer inspection device | |
| WO2007026663A1 (en) | Circuit board inspection instrument, circuit board inspection method, and anisotropic conductivity connector | |
| JP2007265705A (en) | Anisotropic conductive connector and its application | |
| JPWO2007029766A1 (en) | Wafer inspection probe card, wafer inspection apparatus and wafer inspection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090114 |