CN101186818A - Phosphor excited by blue-violet light or blue light, manufacturing method and packaged white light diode - Google Patents
Phosphor excited by blue-violet light or blue light, manufacturing method and packaged white light diode Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 235000005811 Viola adunca Nutrition 0.000 title abstract description 14
- 240000009038 Viola odorata Species 0.000 title abstract description 14
- 235000013487 Viola odorata Nutrition 0.000 title abstract description 14
- 235000002254 Viola papilionacea Nutrition 0.000 title abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 239000007863 gel particle Substances 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000009877 rendering Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- GAGGCOKRLXYWIV-UHFFFAOYSA-N europium(3+);trinitrate Chemical group [Eu+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GAGGCOKRLXYWIV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 238000010907 mechanical stirring Methods 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate group Chemical group [N+](=O)([O-])[O-] NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910013553 LiNO Inorganic materials 0.000 claims 1
- 239000003595 mist Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 17
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 16
- 238000001228 spectrum Methods 0.000 abstract description 3
- 239000012769 display material Substances 0.000 abstract description 2
- 238000003756 stirring Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 6
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000000695 excitation spectrum Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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Abstract
本发明属于光电显示材料和器件技术领域,涉及一种用蓝紫光或蓝光激发的荧光体制造法及用这种荧光体和芯片封装的白光二极管。荧光体的成分为Sr3-a-bBaaSi1-cO5∶bD,cE,dF,eG式中D是二价Eu,E是三价Ce,F是元素B,G是一价Li,a、b、c、d和e为原子摩尔数,数值范围为0.0≤a≤0.2,0.0≤b≤0.2,0.0≤c≤0.2,0.0≤d≤0.2,0.0≤e≤0.2,原子比c∶e=1∶0.01-0.1。按照荧光体的成分配制一种复合硅溶胶,复合硅溶胶进行喷雾造粒,得到干凝胶颗粒,进行微波高温烧成,得到荧光体颗粒。采用上述荧光体的成分和制造方法,容易调整荧光体颗粒的大小、形貌和光谱以及亮度和发光效率,实现量产化生产。用这种荧光体颗粒与蓝紫光或蓝光GaN基芯片一起封装,得到白光二极管。The invention belongs to the technical field of photoelectric display materials and devices, and relates to a method for manufacturing phosphors excited by blue-violet light or blue light and white light diodes packaged with the phosphors and chips. The composition of the phosphor is Sr 3-a-b Ba a Si 1-c O 5 : bD, cE, dF, eG where D is divalent Eu, E is trivalent Ce, F is element B, and G is monovalent Li, a, b, c, d and e are atomic moles, and the value range is 0.0≤a≤0.2, 0.0≤b≤0.2, 0.0≤c≤0.2, 0.0≤d≤0.2, 0.0≤e≤0.2, atom The ratio c:e=1:0.01-0.1. A composite silica sol is prepared according to the composition of the phosphor, and the composite silica sol is sprayed and granulated to obtain dry gel particles, which are fired at high temperature by microwave to obtain the phosphor particles. By adopting the composition and manufacturing method of the above-mentioned phosphor, it is easy to adjust the size, shape, spectrum, brightness and luminous efficiency of the phosphor particles, and realize mass production. The phosphor particles are packaged together with blue-violet light or blue-light GaN-based chips to obtain white light diodes.
Description
【技术领域】【Technical field】
本发明属于光电显示材料和器件技术领域,涉及一种用蓝紫光或蓝光激发的荧光体及制造方法及应用这种荧光体与蓝紫光或蓝光GaN基芯片封装的白光二极管。The invention belongs to the technical field of photoelectric display materials and devices, and relates to a fluorescent body excited by blue-violet light or blue light, a manufacturing method and a white light diode packaged with the fluorescent body and blue-violet light or blue light GaN-based chip.
【背景技术】【Background technique】
目前的白光二极管的发光模式是,在注入电流后,GaN半导体作为芯片发出波长为460纳米的蓝光,蓝光激发以YAG:Ce3+为主要成分的荧光粉层产生波长为560纳米的黄光,蓝光与黄光组合,形成白光。能够发射波长为400-460纳米蓝紫光或蓝光GaN基芯片已经得到商业使用。为了用于固态照明,需要大功率、高亮度和高显色指数的白光二极管。特别地,白光二极管可以用于电视、电脑、显示装置的背光源。对荧光粉而言,现有的如YAG:Ce3+铝酸盐类的荧光粉,在热稳定性、显色指数、激发和发射光谱技术参数方面,不能满足要求。掺稀土的硅酸盐类荧光体,具有稳定性好、成本低、激发和发射光谱宽、显色性高的优点,成为YAG:Ce3+的重要候选替代品。然而,这些荧光体,例如,Sr3-xSiO5:Eu2+ x,0<x≤1(CN1745159A),还存在不足:1)成分单一,激发光谱、发射光谱、亮度和发光效率不容易调整,2)采用高温固相法合成,荧光体的成分不均匀,大小、形貌和结晶度也不容易控制。此外,用液相法制备掺稀土的硅酸盐类荧光体时,硅源通常采用正硅酸乙脂,有毒并且水解条件不稳定。因此,需要采用新的硅酸盐类荧光体成分,并且采用新的制备方法,用来制备这种荧光体,并封装成具有优越性能的白光二极管。The current light-emitting mode of white light diodes is that after the current is injected, the GaN semiconductor as a chip emits blue light with a wavelength of 460 nanometers, and the blue light excites the phosphor layer with YAG:Ce 3+ as the main component to produce yellow light with a wavelength of 560 nanometers. Blue light combines with yellow light to form white light. GaN-based chips capable of emitting blue-violet or blue light at a wavelength of 400-460 nm have been commercially used. For solid state lighting, white light diodes with high power, high brightness and high color rendering index are required. In particular, white light diodes can be used as backlight sources for televisions, computers, and display devices. As far as phosphors are concerned, existing phosphors such as YAG:Ce 3+ aluminates cannot meet the requirements in terms of thermal stability, color rendering index, excitation and emission spectrum technical parameters. Rare earth-doped silicate phosphors have the advantages of good stability, low cost, wide excitation and emission spectra, and high color rendering, and have become important candidate substitutes for YAG:Ce 3+ . However, these phosphors, for example, Sr 3-x SiO 5 :Eu 2+ x , 0<x≤1 (CN1745159A), still have disadvantages: 1) The composition is single, and the excitation spectrum, emission spectrum, brightness and luminous efficiency are not easy Adjustment, 2) Synthesis by high-temperature solid-phase method, the composition of the phosphor is not uniform, and the size, shape and crystallinity are not easy to control. In addition, when the rare earth-doped silicate phosphor is prepared by the liquid phase method, the silicon source is usually tetraethyl orthosilicate, which is toxic and the hydrolysis conditions are unstable. Therefore, it is necessary to use a new silicate phosphor composition and a new preparation method to prepare the phosphor and package it into a white light diode with superior performance.
【发明内容】【Content of invention】
本发明的目的是为了解决现有技术的问题,而提供一种蓝紫光或蓝光激发的荧光体成分及制造方法与白光二极管,该荧光体节能、环保,色坐标稳定,用以制造的白光二极管特性优越。The purpose of the present invention is to solve the problems of the prior art, and to provide a phosphor composition excited by blue-violet light or blue light, a manufacturing method and a white light diode. Features are superior.
为实现上述目的,本发明公开了一种蓝紫光或蓝光激发的荧光体,荧光体的成分为Sr3-a-bBaaSi1-cO5:bD,cE,dF,eG式中D是二价Eu,E是三价Ce,F是元素B,G是一价Li,a、b、c、d和e为原子摩尔数,数值范围为0.0≤a≤0.2,0.0≤b≤0.2,0.0≤c≤0.2,0.0≤d≤0.2,0.0≤e≤0.2,原子比c∶e=1∶0.01-0.1。In order to achieve the above object, the present invention discloses a phosphor excited by blue-violet light or blue light. The composition of the phosphor is Sr 3-ab Ba a Si 1-c O 5 : bD, cE, dF, eG where D is di Valence Eu, E is trivalent Ce, F is element B, G is monovalent Li, a, b, c, d and e are atomic moles, and the value range is 0.0≤a≤0.2, 0.0≤b≤0.2, 0.0 ≤c≤0.2, 0.0≤d≤0.2, 0.0≤e≤0.2, atomic ratio c:e=1:0.01-0.1.
本发明还提供了一种蓝紫光或蓝光激发的荧光体的制造方法,其特征在于所述方法包括以下步骤:The present invention also provides a method for manufacturing a phosphor excited by blue-violet light or blue light, characterized in that the method comprises the following steps:
(1)配制复合硅溶胶:采用纳米二氧化硅,纯度按百分重量为99.9-99.99%,粒度为5-10纳米,按照荧光体的化学计量比成分,称量加入其它成分;按固∶液体积比=1∶10-20加入去离子水,在机械搅拌下,用浓度为30%的硝酸水溶液滴定到pH=1-3,搅拌时间3-6小时,得到复合硅溶胶;(1) Preparation of composite silica sol: adopt nano silicon dioxide, the purity is 99.9-99.99% by weight percentage, and the particle size is 5-10 nanometers, according to the stoichiometric composition of phosphor, adding other components by weighing; by solid: Liquid volume ratio = 1: 10-20 Add deionized water, under mechanical stirring, titrate with 30% nitric acid aqueous solution to pH = 1-3, stir for 3-6 hours to obtain composite silica sol;
(2)喷雾造粒:上述复合硅溶胶在压缩空气温度110℃~200℃,干燥空气量100~200m3/h,物料流1~2L/h下进行喷雾,得到干凝胶颗粒;(2) Spray granulation: the above composite silica sol is sprayed at a compressed air temperature of 110°C-200°C, a dry air volume of 100-200m 3 /h, and a material flow of 1-2L/h to obtain xerogel particles;
(3)微波高温烧成:将上述干凝胶颗粒在箱式电阻炉内预烧,温度600-800℃,时间3-6小时,自然冷却后得到预烧粉;该预烧粉再放入工业微波炉在N2+5%H2混合气体中,在温度1200-1600℃下,烧成3-12小时,得到荧光体。(3) Microwave high-temperature firing: pre-fire the above-mentioned dry gel particles in a box-type resistance furnace at a temperature of 600-800°C for 3-6 hours, and obtain pre-fired powder after natural cooling; The phosphor is obtained by firing in an industrial microwave oven at a temperature of 1200-1600° C. for 3-12 hours in a mixed gas of N 2 +5% H 2 .
应用本发明的蓝紫光或蓝光激发的荧光体可以制备白光二极管,其特征在于用所述荧光体颗粒与蓝紫光或蓝光GaN基芯片一起封装,得到显色指数在60-80,色温在2000-5000K范围的白光二极管。White light diodes can be prepared by using the phosphors excited by blue-violet light or blue light of the present invention, which is characterized in that the phosphor particles are packaged together with blue-violet light or blue-light GaN-based chips to obtain a color rendering index of 60-80 and a color temperature of 2000- White LEDs in the 5000K range.
本发明的优点是,在Sr3SiO5:Eu2+成分中,引入Ba、Ce、B和Li多种元素,实现对荧光体的组分、结构及其光谱的调整作用;用纳米二氧化硅作为硅源调制复合硅溶胶,替代正硅酸乙脂的乙醇水解法,过程环保,容易控制;采用微波工艺快速烧成荧光体,节能,环保,制造效率高;用复合溶胶喷雾法可保证各组分混合均匀;容易得到球形荧光体,可以取消荧光体的球磨后处理;采用的复合溶胶喷雾-微波高温烧成方法,通过组分及其光谱性能的调控,得到的荧光体与芯片封装,可以被宽的蓝光光谱范围内被激发,色坐标稳定,制造出热稳定性、显色指数、激发和发射光谱等特性优越的白光二极管。The advantage of the present invention is that, in the Sr 3 SiO 5 :Eu 2+ composition, various elements such as Ba, Ce, B and Li are introduced to realize the adjustment of the composition, structure and spectrum of the phosphor; Silicon is used as a silicon source to modulate composite silica sol, which replaces the ethanol hydrolysis method of tetraethyl orthosilicate, and the process is environmentally friendly and easy to control; microwave technology is used to quickly burn phosphors, which is energy-saving, environmentally friendly, and has high manufacturing efficiency; the composite sol spray method can ensure The components are mixed evenly; it is easy to obtain spherical phosphors, and the post-milling treatment of the phosphors can be eliminated; the composite sol spray-microwave high-temperature firing method is adopted, and the obtained phosphors are packaged with chips through the regulation of components and their spectral properties. , can be excited in a wide range of blue light spectrum, the color coordinates are stable, and a white light diode with excellent characteristics such as thermal stability, color rendering index, excitation and emission spectrum can be manufactured.
【附图说明】【Description of drawings】
图1为蓝紫光或蓝光激发的荧光体制造方法工艺流程示意图;1 is a schematic diagram of a process flow of a phosphor manufacturing method excited by blue-violet light or blue light;
图2为荧光体的激发光谱和发射光谱图;Fig. 2 is the excitation spectrum and the emission spectrum diagram of phosphor;
图3为用制备的荧光体封装的白光二极管结构示意图。Fig. 3 is a schematic diagram of the structure of a white light diode encapsulated with the prepared phosphor.
【具体实施方式】【Detailed ways】
以下结合本发明的实施例参照附图进行详细叙述。The following will be described in detail in conjunction with the embodiments of the present invention with reference to the accompanying drawings.
本发明按照提供的荧光体成分,主要包括复合硅溶胶配制,喷雾造粒、微波高温烧成几个步骤。其中:According to the phosphor components provided, the present invention mainly includes several steps of compound silica sol preparation, spray granulation, and microwave high-temperature firing. in:
1)复合硅溶胶的配制1) Preparation of composite silica sol
采用纳米二氧化硅,纯度按百分重量为99.9-99.99%,粒度为5-10纳米,按照荧光体的化学计量比成分,称量加入其它成分,其中:Sr和Ba以分析纯的硝酸盐形式,Eu以光谱纯的硝酸铕形式,Ce以平均大小为50纳米的光谱纯Ce2O3形式,B以HBO3形式,Li以LiNO3形式加入。然后按固∶液体积比=1∶10加入去离子水,在机械搅拌情况下,用浓度为30%的硝酸水溶液滴定到pH=1-3,搅拌时间3-6小时,得到复合硅溶胶。Nano-silica is used, the purity is 99.9-99.99% by weight, and the particle size is 5-10 nanometers. According to the stoichiometric ratio of the phosphor, other components are added by weighing, of which: Sr and Ba are used to analyze pure nitrate form, Eu in the form of spectroscopically pure europium nitrate, Ce in the form of spectroscopically pure Ce2O3 with an average size of 50 nm, B in the form of HBO3 , and Li in the form of LiNO3 . Then add deionized water according to solid: liquid volume ratio = 1: 10, under the condition of mechanical stirring, titrate with 30% nitric acid aqueous solution to pH = 1-3, and stir for 3-6 hours to obtain composite silica sol.
2)喷雾造粒2) Spray granulation
上述复合硅溶胶在压缩空气温度110℃~200℃,干燥空气量100~200m3/h,物料流1~2L/h下进行喷雾,得到干凝胶颗粒。The above composite silica sol is sprayed at a compressed air temperature of 110°C-200°C, a dry air volume of 100-200m 3 /h, and a material flow of 1-2L/h to obtain xerogel particles.
3)微波高温烧成3) microwave high temperature firing
干凝胶颗粒在箱式电阻炉内预烧,温度600-800℃,时间3-6小时,自然冷却后得到预烧粉。该预烧粉再放入工业微波炉,烧成温度为1200-1600℃,在N2+5%H2混合气体中烧成3-12小时,得到荧光体。Dry gel particles are pre-fired in a box-type resistance furnace at a temperature of 600-800°C for 3-6 hours, and then naturally cooled to obtain a pre-fired powder. The calcined powder is then put into an industrial microwave oven at a firing temperature of 1200-1600° C. and fired in a mixed gas of N 2 +5% H 2 for 3-12 hours to obtain a phosphor.
应用上述荧光体制备白光二极管的方法是:The method for preparing a white light diode by applying the above-mentioned phosphor is:
用制备的荧光体和GaN基半导体芯片进行白光二极管封装。芯片发射蓝紫或蓝光,波长在400-480纳米范围。荧光体在400-480纳米光激发下,产生黄绿色光,波长范围为560-580纳米。二极管采用公知的工艺封装,芯片放在反射杯上,芯片和该荧光体由透明环氧树脂成型。该二极管发出白光,显色指数在80以上,色温在2000-5000K范围。The prepared phosphor and GaN-based semiconductor chips are used to package white light diodes. The chip emits blue-violet or blue light with a wavelength in the range of 400-480 nanometers. Under the excitation of 400-480 nm light, the phosphor produces yellow-green light with a wavelength range of 560-580 nm. The diode is packaged by a known process, the chip is placed on the reflective cup, and the chip and the phosphor are molded by transparent epoxy resin. The diode emits white light, the color rendering index is above 80, and the color temperature is in the range of 2000-5000K.
下面的实施例是为了进一步阐明本发明的工艺过程特征而非限制本发明。The following examples are intended to further illustrate the process characteristics of the present invention without limiting the present invention.
实施例1Example 1
按照荧光体的成分和附图1的工艺流程,取a=0.0,b=0.05,c=0.0,d=0.0,e=0.0,称取分析纯的硝酸锶、纯度为99.9%平均大小为10纳米的SiO2和光谱纯的硝酸铕,一起放入一个烧杯。按固∶液体积比=1∶10,加入去离子水,机械搅拌,用浓度为30%的硝酸水溶液滴定到pH=1,搅拌时间3小时,得到复合硅溶胶。该复合硅溶胶进行喷雾造粒,设置设置压缩空气温度为入口温度110℃,干燥空气量100m3/h,物料流1L/h,得到干凝胶颗粒;该干凝胶颗粒装入刚玉坩埚,在普通马弗炉内预烧,温度600℃,时间3小时,自然冷却后得到预烧粉。把装有预烧粉的坩埚放置于工业微波炉内,先通入流量为2L/h的N2+5%H2(体积比)混合气体,控制温度在1200℃下烧成3小时后,关掉电源,冷却得到荧光体颗粒。According to the composition of the phosphor and the process flow of accompanying drawing 1, take a=0.0, b=0.05, c=0.0, d=0.0, e=0.0, take by weighing analytically pure strontium nitrate, the purity is 99.9%, and the average size is 10 Nano SiO 2 and spectroscopically pure europium nitrate were placed together in a beaker. According to solid: liquid volume ratio = 1: 10, add deionized water, mechanically stir, titrate to pH = 1 with 30% nitric acid aqueous solution, and stir for 3 hours to obtain a composite silica sol. The composite silica sol is sprayed and granulated, and the compressed air temperature is set at an inlet temperature of 110°C, the dry air volume is 100m 3 /h, and the material flow is 1L/h to obtain xerogel particles; the xerogel particles are put into a corundum crucible, Pre-fire in an ordinary muffle furnace at a temperature of 600°C for 3 hours, and then naturally cool to obtain a pre-fired powder. Place the crucible with the pre-burned powder in an industrial microwave oven, first pass in a mixed gas of N 2 +5% H 2 (volume ratio) with a flow rate of 2L/h, control the temperature at 1200°C for 3 hours, and then close the Turn off the power, and cool down to obtain phosphor particles.
把该荧光颗粒与带支架的发射波长为400纳米的商业蓝紫光芯片,用环氧树脂进行封装,得到白光二极管。图2是成分为Sr3-a-bBaaSi1-cO5:bEu2+,cE,dF,eG(a=0.0,b=0.05,c=0.0,d=0.0,e=0.0)的荧光体的激发光谱和发射光谱图,图3是封装的白光二极管结构示意图,图中:GaN基半导体芯片1放在反射杯2上,芯片和该磷光体3由透明环氧树脂4成型。E:LED芯片发射蓝色光,F:磷光体发射黄绿色光。The fluorescent particles and a commercial blue-violet light chip with an emission wavelength of 400 nanometers with a bracket are encapsulated with epoxy resin to obtain a white light diode. Figure 2 is the fluorescence of the composition Sr 3-ab Ba a Si 1-c O 5 :bEu 2+ , cE, dF, eG (a=0.0, b=0.05, c=0.0, d=0.0, e=0.0) Figure 3 is a schematic diagram of the structure of a packaged white light diode. In the figure: a GaN-based semiconductor chip 1 is placed on a reflective cup 2, and the chip and the phosphor 3 are formed by transparent epoxy resin 4. E: LED chip emits blue light, F: phosphor emits yellow-green light.
实施例2Example 2
按照荧光体的成分和附图1的工艺流程,取a=0.1,b=0.1,c=0.05,d=0.0,c∶e=10∶1,称取分析纯的硝酸锶和硝酸钡、纯度为99.9%平均大小为10纳米的SiO2和平均大小为50纳米的光谱纯Ce2O3、分析纯的硝酸锂和光谱纯的硝酸铕,一起放入一个烧杯。按固∶液体积比=1∶15,加入去离子水,机械搅拌,用浓度为30%的硝酸水溶液滴定到pH=2,搅拌时间5小时,得到复合硅溶胶。该复合硅溶胶进行喷雾造粒,设置压缩空气温度为入口温度150℃,干燥空气量150m3/h,物料流2L/h,得到干凝胶颗粒;该干凝胶颗粒装入刚玉坩埚,在普通马弗炉内预烧,温度700℃,时间4小时,自然冷却后得到预烧粉。把装有预烧粉的坩埚放置于工业微波炉内,先通入流量为2L/h的N2+5%H2(体积比)混合气体,控制温度在1300℃下烧成6小时后,关掉电源,冷却得到球形的荧光体颗粒。把该荧光颗粒与带支架的发射波长为460纳米的商业蓝光芯片,用环氧树脂进行封装,得到白光二极管。According to the composition of phosphor and the technological process of accompanying drawing 1, get a=0.1, b=0.1, c=0.05, d=0.0, c: e=10: 1, take by weighing analytically pure strontium nitrate and barium nitrate, purity 99.9% SiO 2 with an average size of 10 nm and spectrally pure Ce 2 O 3 with an average size of 50 nm, analytically pure lithium nitrate and spectroscopically pure europium nitrate were put together in a beaker. According to solid: liquid volume ratio = 1: 15, add deionized water, mechanically stir, titrate to pH = 2 with 30% nitric acid aqueous solution, and stir for 5 hours to obtain a composite silica sol. The composite silica sol is sprayed and granulated, and the compressed air temperature is set as the inlet temperature of 150°C, the dry air volume is 150m 3 /h, and the material flow is 2L/h to obtain xerogel particles; the xerogel particles are put into a corundum crucible, and Pre-fired in a common muffle furnace at a temperature of 700°C for 4 hours, and obtained the pre-fired powder after natural cooling. Place the crucible with the pre-burned powder in an industrial microwave oven, first pass in a mixed gas of N 2 +5% H 2 (volume ratio) with a flow rate of 2L/h, control the temperature at 1300°C for 6 hours, and then close the Turn off the power, cool to obtain spherical phosphor particles. The fluorescent particles and the commercial blue light chip with the emission wavelength of 460 nanometers and the support are packaged with epoxy resin to obtain a white light diode.
实施例3Example 3
按照荧光体的成分和附图1的工艺流程,取a=0.0,b=0.0,c=0.1,d=0.0,c∶e=1∶0.05,称取分析纯的硝酸锶、纯度为99.9%平均大小为10纳米的SiO2和平均大小为50纳米的光谱纯Ce2O3、分析纯的硝酸锂,一起放入一个烧杯。按固∶液体积比=1∶20,加入去离子水,机械搅拌,用浓度为30%的硝酸水溶液滴定到pH=3,搅拌时间6小时,得到复合硅溶胶。该复合硅溶胶进行喷雾造粒,设置设置压缩空气温度为入口温度200℃,干燥空气量200m3/h,物料流1.5L/h,得到干凝胶颗粒;该干凝胶颗粒装入刚玉坩埚,在普通马弗炉内预烧,温度800℃,时间6小时,自然冷却后得到预烧粉。把装有预烧粉的坩埚放置于工业微波炉内,先通入流量为3L/h的N2+5%H2(体积比)混合气体,控制温度在1400℃下烧成12小时后,关掉电源,冷却得到球形的荧光体颗粒。把该荧光颗粒与带支架的发射波长为460纳米的商业蓝光芯片,用环氧树脂进行封装,得到白光二极管。According to the composition of phosphor and the technological process of accompanying drawing 1, get a=0.0, b=0.0, c=0.1, d=0.0, c: e=1: 0.05, take by weighing analytically pure strontium nitrate, purity is 99.9% SiO 2 with an average size of 10 nm, spectroscopically pure Ce 2 O 3 with an average size of 50 nm, and analytically pure lithium nitrate were put together in a beaker. According to solid: liquid volume ratio = 1: 20, add deionized water, mechanically stir, titrate to pH = 3 with 30% nitric acid aqueous solution, and stir for 6 hours to obtain a composite silica sol. The composite silica sol is sprayed and granulated, and the compressed air temperature is set at an inlet temperature of 200°C, the dry air volume is 200m 3 /h, and the material flow is 1.5L/h to obtain xerogel particles; the xerogel particles are put into a corundum crucible , pre-fired in an ordinary muffle furnace at a temperature of 800 ° C for 6 hours, and obtained pre-fired powder after natural cooling. Place the crucible with the pre-burned powder in an industrial microwave oven, first feed the mixed gas of N 2 +5% H 2 (volume ratio) with a flow rate of 3L/h, control the temperature at 1400°C for 12 hours, and then close the Turn off the power, cool to obtain spherical phosphor particles. The fluorescent particles and the commercial blue light chip with the emission wavelength of 460 nanometers and the support are packaged with epoxy resin to obtain a white light diode.
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| CN101867007A (en) * | 2010-05-11 | 2010-10-20 | 电子科技大学 | Preparation method of LED lamp phosphor layer |
| CN102063002A (en) * | 2010-11-26 | 2011-05-18 | 杭州科汀光学技术有限公司 | Color regulating plate for solid light source projector |
| WO2011143792A1 (en) | 2010-05-20 | 2011-11-24 | 大连路明发光科技股份有限公司 | Releasable light-converting luminescent film |
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| CN102002269B (en) * | 2009-09-03 | 2013-11-20 | 佛山市国星光电股份有限公司 | Fluorescent powder coating liquid of white light emitting diode as well as preparation method and coating method thereof |
| US9068077B2 (en) | 2009-09-16 | 2015-06-30 | Dalian Luminglight Co., Ltd. | Light-conversion flexible polymer material and use thereof |
| CN101867007A (en) * | 2010-05-11 | 2010-10-20 | 电子科技大学 | Preparation method of LED lamp phosphor layer |
| WO2011143792A1 (en) | 2010-05-20 | 2011-11-24 | 大连路明发光科技股份有限公司 | Releasable light-converting luminescent film |
| CN102063002A (en) * | 2010-11-26 | 2011-05-18 | 杭州科汀光学技术有限公司 | Color regulating plate for solid light source projector |
| CN102063002B (en) * | 2010-11-26 | 2012-07-25 | 杭州科汀光学技术有限公司 | Color regulating plate for solid light source projector |
| CN104673283A (en) * | 2014-12-11 | 2015-06-03 | 上海师范大学 | A silicate strong near-infrared fluorescent emission material induced by Al3+ induced by ultraviolet-visible light broadband excitation and its preparation method and application |
| CN109810710A (en) * | 2019-03-01 | 2019-05-28 | 中国科学院长春应用化学研究所 | A kind of two-color self-reference temperature measurement luminescent material and preparation method thereof |
| CN109810710B (en) * | 2019-03-01 | 2021-09-21 | 中国科学院长春应用化学研究所 | Double-color self-reference temperature measurement luminescent material and preparation method thereof |
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