CN101179000A - Plasma source and uses thereof - Google Patents
Plasma source and uses thereof Download PDFInfo
- Publication number
- CN101179000A CN101179000A CNA2006101382348A CN200610138234A CN101179000A CN 101179000 A CN101179000 A CN 101179000A CN A2006101382348 A CNA2006101382348 A CN A2006101382348A CN 200610138234 A CN200610138234 A CN 200610138234A CN 101179000 A CN101179000 A CN 101179000A
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- helix tube
- anode
- plasma source
- power supply
- source
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- 238000001704 evaporation Methods 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 230000005672 electromagnetic field Effects 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000005240 physical vapour deposition Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- 230000002708 enhancing effect Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 25
- 238000000034 method Methods 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000009395 breeding Methods 0.000 description 2
- 230000001488 breeding effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005757 colony formation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
The invention discloses a plasma source, which consists of a helix tube, a cathode and an anode, wherein, both ends of the helix tube are communicated with the cathode and the anode respectively; the helix tube is made of a hollow conductor tube, the interior of which is cooled by water flow, and the outside surface of which is insulated; a DC power supply is arranged among the anode, the helix tube and the cathode; an anode of the DC power supply is communicated with the anode, and a cathode of the DC power supply is communicated with the cathode. The plasma source of the invention is characterized by connection between a single end with the power supply, large self-strengthening plasma, plasma purity, hollow and light electrode, shift between a straight state and a bent state for the spiral tube, large ranges for the adjustment of diameter and length, flexible layout, etc. The plasma source of the invention can be applied in an evaporation method and a low-pressure vapor deposition.
Description
Technical field
The present invention relates to a kind of plasma enhanced techniques and equipment thereof and application thereof, especially for the plasma source technology and equipment and the application thereof of low pressure gas phase deposition.
Background technology
(comprise in the process of physical vapour deposition (PVD)-PVD and chemical vapour deposition (CVD)-CVD) in vapour deposition, particularly low-pressure vapor phase is reacted the synthetic compound thin-film process, especially in sputter of simple substance material and the evaporation synthetic compound thin-film process, often be subjected to the restriction of ionization level deficiency, cause the low and weak deficiency that waits of membranous layer binding force of deposition rate.
In order to address the above problem, developed different kinds of ions source technology and equipment, wherein most of equipment exist more complicated and heavy, cost than problems such as height.For example, the hot arc ion source of the high-power industry of famous Balzers (US6,740,393 B1) is being obtained successful application aspect the cutter plated film; Yet the complex structure heaviness of its helmholtz coil produces electromagnetic interference in the nonclient area of the strong magnetic field that is produced inside and outside coating chamber, brings a series of thoroughly serious problems of solution that are difficult to; Huge and the equipment cost height of MEVVA source device has limited its application in industrial plated film.
Summary of the invention
At the deficiencies in the prior art, the invention provides a kind of simple in structure, light plasma source.
Plasma source of the present invention comprises helix tube, negative electrode, anode and power supply, in the power path of negative electrode and anode helix tube is set, and helix tube is made for the hollow conductor pipe, the inside water flowing cooling of this hollow conductor helix tube, and its outer surface is insulated.Between anode, helix tube and cathode, DC power supply is set.Utilize the discharging current between negative electrode and the anode to produce external electromagnetic field when being centered around helix tube around its discharge channel flowing through, constraint charged particle and strengthen the ionization of particle constitutes a kind of novel plasma source.
The DC power supply that is provided with between described anode, helix tube and the negative electrode can be taked following connected mode: (1) dc power anode is connected with an end of helix tube, and the other end of helix tube is communicated with anode, and dc power cathode is connected with negative electrode; (2) between helix tube and the anode DC power supply is set, dc power anode is connected with anode, and dc power cathode is connected with helix tube, and the other end of helix tube is communicated with negative electrode; (3) be communicated with the positive pole and the negative pole of DC power supply on arbitrary section the two ends of helix tube respectively, dc power anode is near anode, and dc power cathode is near negative electrode.In above-mentioned three kinds of patterns, except driving the helix tube in the main discharge current between negative electrode and the anode with DC power supply, can also add an auxiliary adjustment DC power supply at the two ends of helix tube again, helix tube is communicated with the auxiliary adjustment dc power anode near anode one end, the helix tube other end is communicated with the negative pole of auxiliary adjustment DC power supply, and the electromagnetic field that helix tube produced is further regulated and control.
Helix tube hollow is light and can be flexible and changeable as required: helix tube can be straight tube, also can crooked (axis that is helix tube can or be curve for straight line); The pitch of helix tube can evenly distribute, as required the density flexible distributed; Can make the helix tube of uniform cross-section or variable cross-section (change diameter) etc. as required.
The electromagnetic field that helix tube self is produced in helix tube inside and the near region have higher-strength, electronics and/or ion are quickened, fast breeding is to very high plasma density, satisfy multiple needs by adding the ion that electromagnetic field control helix tube plasma source produced and/or the spatial and temporal distributions of electronics, be used in particular for low pressure gas phase deposition.
Plasma source of the present invention specifically can be used in following detailed process: use in evaporation mode (1); (2) in cleaning, uses in ion; (3) in physical vapour deposition (PVD), assist the enhancing deposition applications as ionization source; (4) in chemical vapour deposition (CVD) as the enhancing deposition applications of ionization source; (5) Application of composite that is: in low pressure gas phase deposition, works alone in advance and carries out the ion cleaning, and as evaporation source and/or the auxiliary deposition that strengthens, enhancing deposits as ionization source in chemical vapour deposition (CVD) in physical vapour deposition (PVD).
When the ionogenic anode of arbitrary helix tube connects a conductor crucible, can work in evaporation mode.Can work alone in advance and carry out the ion cleaning, also can make up as arc evaporation source with crucible, the enhancing as ionization source in chemical vapour deposition (CVD) deposits (PECVD) application etc., is being kept high ionization level by the needed space of film-coating workpiece.
Plasma source of the present invention can Application of composite, that is: in low pressure gas phase deposition, work alone in advance and carry out ion and clean, and as evaporation source and/or the auxiliary deposition that strengthens, strengthens deposition as ionization source in chemical vapour deposition (CVD) in physical vapour deposition (PVD); Can also satisfy multiple industrial plated film needs as required flexible and changeablely.
Arbitrary or many double helix pipe ion source are introduced the coating chamber of low pressure gas phase deposition, can be used as ionization source, also can be combined into arc evaporation source with crucible; The helix tube ion source also can work alone in advance and carry out the ion cleaning, with work simultaneously as the ionization source of PEPVD or PECVD with magnetic controlled sputtering target and/or evaporation source, thereby improve ionization level significantly: by the electromagnetic field and/or the applying bias electric field of magnetic controlled sputtering target colony formation, constraint and acceleration charged particle, improve their energy and constantly breed new charged particle, thereby kept high ionization level by the needed space of film-coating workpiece.
Plasma source of the present invention is in when work, and discharging current generates an electromagnetic field when being centered around helix tube around its discharge channel flowing through, thereby the motion of each charged particle in the discharge process is retrained, and strengthens ionization significantly.Helix tube ion source of the present invention can be made high-power industrial arc plasma source, also can be made into the small-scale test arc plasma source, also can realize miniature arc plasma source.
Effect of the present invention is very obvious, prove by experiment, according to helix tube plasma source of the present invention, have single-ended connection power supply, significantly from strengthen plasma, plasma is pure, electrode hollow is light, the helix tube big and layout of the adjustable range of bendable, diameter and length characteristics of giving prominence to such as flexible directly, obviously surmounts traditional ion source; Helix tube plasma source of the present invention is used for PEPVD and PECVD etc., improved ionization level significantly, synthesize for a long time because the restriction of ionization level is difficult to synthetic isozygoty gold and pure compound rete, this is that conventional ion source and reactive deposition technology are inaccessible.
Description of drawings
Fig. 1 helix tube ion source agent structure schematic diagram;
4 kinds of concrete connection modes of helix tube and power supply in Fig. 2 to 5 helix tube ion source.
Among the figure: 1-low pressure vessel (plated film storehouse); The 2-helix tube; The 3-DC power supply; The anode electrode of 4-plasma source; The cathode electrode of 5-plasma source; The 6-auxiliary control source; The 7-filament supply.
Embodiment
Now the embodiment shown in the 1-5 further specifies the present invention in conjunction with the accompanying drawings.
The present invention proposes a kind of new Technique of Plasma Sources technology and equipment thereof of electromagnetic field confined discharge.As shown in Figure 1, in a low pressure vessel (plated film storehouse) 1, a kind of helix tube 2 usefulness hollow conductor pipes are made, and fine and close insulating barrier is made in the inside water flowing cooling of this hollow conductor helix tube on its surface; Positive pole with the perfectly straight stream power supply 3 of a termination of helix tube 2, helix tube 2 other ends are connected anode electrode 4, utilize the anode 4 of plasma source and the discharging current between the negative electrode 5 to generate an electromagnetic field when being centered around helix tube 2 around its discharge channel flowing through, thereby the motion to each charged particle in the discharge process retrains, strengthen ionization significantly, even the electric arc of formation confinement, become a kind of new plasma source/ion source.
The connection mode of helix tube 2 and power supply 3 in the ion source: this helix tube 2 can be communicated between the positive pole of anode 4 and DC power supply 3 (as Fig. 2), also can be communicated between the negative pole of negative electrode 5 and DC power supply 3 (as Fig. 3), can also on the two ends of one section helix tube, be communicated with the positive pole and the negative pole (as Fig. 4) of DC power supply 3 respectively; In above-mentioned three kinds of patterns, except negative electrode 5 and the main discharge current between the anode 4 with DC power supply drive the helix tube, can also add an auxiliary adjustment power supply 6 (as Fig. 5) at the two ends of helix tube 2, the electromagnetic field that helix tube 2 is produced is further regulated, to satisfy different demands.
Helix tube hollow is light, and flexible and changeable: helix tube is bendable directly, and the pitch density flexible distributed as required that can evenly distribute also can be made the helix tube of variable cross-section (change diameter) as required.
The electromagnetic field that self produced of energising helix tube in helix tube inside and the near region have higher-strength, electronics and/or ion are quickened, even the starting arc discharge, fast breeding is to higher plasma density.Satisfy multiple needs by adding the ion that electromagnetic field control helix tube plasma source produced and/or the spatial and temporal distributions of electronics, be used in particular for low pressure gas phase deposition.As shown in Figure 5,, can be used as the ionization source of PECVD, also can constitute arc evaporation source with crucible with one or many this helix tube ion sources introducing low pressure gas phase deposition chambers 12; The helix tube ion source also can work alone in advance and carry out the ion cleaning, with work simultaneously as the ionization source of PEPVD with magnetic controlled sputtering target and/or evaporation source, thereby improve ionization level significantly: the electromagnetic field that forms by magnetic controlled sputtering target colony and or the applying bias electric field, constraint and acceleration charged particle, improve their energy and constantly breed new charged particle, thereby kept high ionization level by the needed space of film-coating workpiece.When the ionogenic anode of helix tube connects a conductor crucible, can work in evaporation mode.
Effect of the present invention is very obvious, prove by experiment, according to helix tube plasma source of the present invention, have single-ended connection power supply, significantly from strengthen plasma, plasma is pure, electrode hollow is light, the helix tube big and layout of the adjustable range of bendable, diameter and length characteristics of giving prominence to such as flexible directly; This helix tube ion source can be made high-power industrial arc plasma source, also can be made into the small-scale test arc plasma source, also can realize miniature arc plasma source; Helix tube plasma source of the present invention is used for PEPVD and PECVD etc., improved ionization level significantly, synthesize for a long time because the restriction of ionization level is difficult to synthetic isozygoty gold and pure compound rete, this is that conventional ion source and reactive deposition technology are inaccessible.
Claims (13)
1. a plasma source comprises helix tube, negative electrode and anode, it is characterized in that: in the power path of negative electrode and anode helix tube is set, helix tube is made for the hollow conductor pipe, the inside water flowing cooling of this hollow conductor helix tube, and its outer surface is insulated; Between anode, helix tube and cathode, DC power supply is set, utilize the discharging current between negative electrode and the anode to produce external electromagnetic field when being centered around helix tube around its discharge channel flowing through, the ionization of constraint charged particle and enhancing particle constitutes a kind of novel plasma source.
2. according to the described plasma source of claim 1, it is characterized in that: the connected mode of the DC power supply that is provided with between described anode, helix tube and the negative electrode is: dc power anode is connected with an end of helix tube, the other end of helix tube is communicated with anode, and dc power cathode is connected with negative electrode.
3. according to the described plasma source of claim 1, it is characterized in that: the connected mode of described helix tube and DC power supply is: between helix tube and the anode DC power supply is set, dc power anode is connected with anode, dc power cathode is connected with helix tube, and the other end of helix tube is communicated with negative electrode.
4. according to the described plasma source of claim 1, it is characterized in that: the connected mode of the DC power supply that is provided with between described anode, helix tube and the negative electrode is: the positive pole and the negative pole that are communicated with DC power supply on arbitrary section the two ends of helix tube respectively, dc power anode is near anode, and dc power cathode is near negative electrode.
5. according to claim 2,3 or 4 described plasma sources, it is characterized in that: the two ends at helix tube are communicated with an auxiliary adjustment DC power supply, helix tube is communicated with the auxiliary adjustment dc power anode near anode one end, the helix tube other end is communicated with the negative pole of auxiliary adjustment DC power supply, and the electromagnetic field that helix tube produced is further regulated and control.
6. according to the described plasma source of claim 1, it is characterized in that: described helix tube axis is straight line or is curve.
7. according to the described plasma source of claim 1, it is characterized in that: described helix tube pitch is evenly distribution or density flexible distributed as required.
8. according to the described plasma source of claim 1, it is characterized in that: described helix tube cross section is uniform cross-section or variable cross-section.
9. the application of the arbitrary plasma source of claim 1 to 8 in evaporation mode.
10. the application of the arbitrary plasma source of claim 1 to 8 in ion cleans.
11. the arbitrary plasma source of claim 1 to 8 in physical vapour deposition (PVD) as the application of the auxiliary enhancing deposition of ionization source.
12. the arbitrary plasma source of claim 1 to 8 in chemical vapour deposition (CVD) as the application of the enhancing of ionization source deposition.
13. the Application of composite of the arbitrary plasma source of claim 1 to 8, in low pressure gas phase deposition, work alone in advance and carry out the ion cleaning, as evaporation source and/or the auxiliary deposition that strengthens, enhancing deposits as ionization source in chemical vapour deposition (CVD) in physical vapour deposition (PVD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101382348A CN101179000B (en) | 2006-11-08 | 2006-11-08 | Plasma source and uses thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101382348A CN101179000B (en) | 2006-11-08 | 2006-11-08 | Plasma source and uses thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101179000A true CN101179000A (en) | 2008-05-14 |
| CN101179000B CN101179000B (en) | 2010-04-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101382348A Expired - Fee Related CN101179000B (en) | 2006-11-08 | 2006-11-08 | Plasma source and uses thereof |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102781155A (en) * | 2012-07-23 | 2012-11-14 | 西安电子科技大学 | Large-area uniform high-density plasma generation system with cooled electrode |
| WO2013046120A1 (en) * | 2011-09-26 | 2013-04-04 | Krupakar Murali Subramanian | Systems and methods for electromagnetic acceleration or compression of particles |
| CN104091751A (en) * | 2014-07-05 | 2014-10-08 | 宁波大学 | Under-atmosphere ion source device and working method thereof |
| CN111455336A (en) * | 2020-04-30 | 2020-07-28 | 苏州艾钛科纳米科技有限公司 | Electromagnetic field enhanced magnetron sputtering device and method for preparing diamond-like carbon coating |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200969335Y (en) * | 2006-11-08 | 2007-10-31 | 北京实力源科技开发有限责任公司 | Plasma source |
-
2006
- 2006-11-08 CN CN2006101382348A patent/CN101179000B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013046120A1 (en) * | 2011-09-26 | 2013-04-04 | Krupakar Murali Subramanian | Systems and methods for electromagnetic acceleration or compression of particles |
| CN102781155A (en) * | 2012-07-23 | 2012-11-14 | 西安电子科技大学 | Large-area uniform high-density plasma generation system with cooled electrode |
| CN102781155B (en) * | 2012-07-23 | 2015-06-24 | 西安电子科技大学 | Large-area uniform high-density plasma generation system with cooled electrode |
| CN104091751A (en) * | 2014-07-05 | 2014-10-08 | 宁波大学 | Under-atmosphere ion source device and working method thereof |
| CN111455336A (en) * | 2020-04-30 | 2020-07-28 | 苏州艾钛科纳米科技有限公司 | Electromagnetic field enhanced magnetron sputtering device and method for preparing diamond-like carbon coating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101179000B (en) | 2010-04-21 |
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Granted publication date: 20100421 Termination date: 20191108 |
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