CN100573816C - Reaction chamber liner and comprise the reaction chamber of this liner - Google Patents

Abstract

The invention discloses a kind of reaction chamber liner and comprise the reaction chamber of this liner, comprise side liner, bottom surface liner, the bottom surface liner is higher than the lower edge of side liner, and has one deck bottom surface liner at least, has a plurality of liners hole on the liner of bottom surface.The reaction chamber that comprises this liner is split into superjacent air space and following side space, and by the liner hole space of top is communicated with the space of below.The process gas that enters reaction chamber from air inlet must could be drawn out of from exhaust outlet by the liner hole on the liner of bottom surface.Make the gas flow rate in the reaction chamber be tending towards homogenizing, can make chamber wall be protected, can make again the distribution of gas in the chamber even.When wafer carries out etching technics in chamber, can obtain uniform etch rate on the entire wafer surface.The present invention mainly is applicable to the reaction chamber of semiconductor processing equipment, also is applicable to other similar chamber.

Description

Reaction chamber lining and reaction chamber comprising the same

technical field

The invention relates to a semiconductor processing equipment component, in particular to a reaction chamber and its lining.

Background technique

Semiconductor wafer processing includes chemical vapor deposition (CVD) of layers of metal, dielectric, and semiconductor materials, such deposition processes including etching of these layers, polishing of photoresist mask layers, and the like. In the case of etching, plasma etching is commonly used to etch metal layers, dielectric layers and semiconductor materials. A parallel-plate plasma reactor generally includes a reaction chamber in which the silicon wafer is etched. After entering the reaction chamber, the etching gas is ionized by electrodes into plasma, and the plasma etches the wafer in the reaction chamber.

During the plasma etch process, the gas is ionized to form a plasma by adding a large amount of energy to the gas at a lower pressure. By adjusting the potential of the wafer, the plasma is directed to impinge on the wafer perpendicularly, causing material to be removed from the unmasked areas of the wafer.

In order to obtain a uniform etch rate over the entire wafer surface, it is desirable to have a uniform distribution of the plasma over the wafer surface. At present, the uniformity of the plasma in the chamber is generally improved by improving the air intake method of the reaction chamber, such as applying various shapes of gas distribution plates, nozzles, and the like. The uneven distribution of etching gas in the reaction chamber can adversely affect the uniform distribution of the plasma. The exhaust port of the reaction chamber is connected to the vacuum pump, and its position, aperture, axial direction, etc. will also affect the uniformity of the plasma in the chamber.

The common reaction chamber structure is shown in Figure 1, by insulating window 2, chamber side wall 3, chamber bottom wall 16 etc. to form reaction chamber 11, is provided with electrostatic chuck 7 (or mechanical chuck), electrostatic A wafer can be placed on the chuck 7 . The exhaust port 6 is connected with a vacuum device (dry pump, etc., not shown in the figure), and the reaction chamber 11 is made into a vacuum environment, and the process gas is supplied by the central air inlet 4 (or the peripheral air inlet 5, or a combination of both) ) enters the reaction chamber 11, the coil 1 above the insulating window 2 is fed with radio frequency energy, coupled through the insulating window 2, plasma is formed in the reaction chamber 11, and the wafer 8 on the electrostatic chuck 7 is etched. When the plasma etches the wafer 8, it also etches the side wall 3 and the bottom wall 16 of the chamber, which will adversely affect the life of the etching machine and the quality of wafer etching.

Generally, a lining is placed in the reaction chamber 11 to protect the chamber side wall 3 and the chamber bottom wall 16. As shown in FIG. 1 , the lining in the reaction chamber 11 includes a side lining 9 and a bottom wall lining 10. The chamber side wall 3 and the chamber bottom wall 16 are no longer in direct contact with the plasma, are protected from plasma bombardment, and make cleaning and replacement more convenient.

The exhaust port 6 may be provided directly below or below the side of the reaction chamber 11 . During processing (etching, etc.), the chamber inlet provides process gas, and at the same time starts the vacuum pump (not shown) at the end of the exhaust port 6 to keep the pressure in the reaction chamber 11 constant and remove etching particles.

In order not to affect the process, the cross-sectional area of the exhaust port 6 is generally relatively large. The distance between the reaction chamber and the exhaust port is different, and the gas flow is inconsistent, resulting in uneven internal pressure and uneven plasma distribution, which affects the etching process results.

Contents of the invention

The object of the present invention is to provide a reaction chamber liner which can not only protect the chamber wall, but also make the gas distribution in the chamber uniform, and the reaction chamber comprising the liner.

The purpose of the present invention is achieved through the following technical solutions:

The reaction chamber lining of the present invention comprises a side lining and a bottom lining connected to each other, the bottom lining is higher than the lower edge of the side lining, and there is at least one layer of bottom lining; the bottom lining is A plurality of inner lining holes are arranged, so that the space above the inner lining on the bottom surface communicates with the space below.

The bottom surface is lined with multiple layers.

The bottom lining has two layers, including an upper lining and a lower lining,

The upper lining has a plurality of upper lining holes;

The lower lining has a plurality of lower lining holes;

The lining holes of the upper layer and the lining holes of the lower layer are alternately arranged.

The side lining includes multiple parts, and the multiple parts of the side lining are superimposed on each other to form the whole side lining; each layer of the bottom lining is respectively connected with a part of the side lining.

The reaction chamber is provided with the above-mentioned reaction chamber lining,

The air inlet communicates with the upper space of the bottom lining;

The air outlet communicates with the space below the bottom lining.

The air outlet is provided on the chamber side wall of the reaction chamber.

The air outlet is provided on the bottom wall of the reaction chamber.

An electrostatic chuck is provided in the reaction chamber, and a wafer can be placed on the electrostatic chuck, and the position of the electrostatic chuck for placing the wafer is located in the upper space of the bottom lining.

It can be seen from the above-mentioned technical solutions provided by the present invention that the reaction chamber lining and the reaction chamber containing the lining described in the present invention include a multi-layer bottom lining, and the bottom lining is higher than the side lining. A plurality of lining holes are opened on the lining of the lower edge and the bottom surface; the reaction chamber containing the lining is divided into an upper space and a lower space, and the upper space communicates with the lower space through the inner lining holes. The process gas entering the reaction chamber from the air inlet must pass through the lining hole on the bottom surface to be drawn out from the exhaust port, so that the gas flow rate in the reaction chamber tends to be uniform, which can not only protect the chamber wall, It can also make the gas distribution in the chamber even. When the wafer undergoes the etch process in the chamber, a uniform etch rate can be obtained across the entire wafer surface.

The present invention is mainly applicable to reaction chambers of semiconductor processing equipment, and is also applicable to other similar chambers.

Description of drawings

Fig. 1 is the structural representation of reaction chamber and lining thereof in the prior art;

Fig. 2 is a structural schematic diagram of the reaction chamber and its lining of the present invention.

Detailed ways

The reaction chamber lining of the present invention is mainly used to protect the wall of the reaction chamber. The reaction chamber mentioned here mainly refers to the reaction chamber of the semiconductor wafer processing equipment, and may also be other chambers.

Its preferred specific implementation is shown in Figure 2, including a side lining 9 and a bottom surface lining, the bottom surface lining is higher than the lower edge of the side lining 9, and the bottom surface lining has two layers, including the upper layer lining 12 and the lower lining 13, and the upper lining 12 has a plurality of upper lining holes 14; the lower lining 13 has a plurality of lower lining holes 15. The upper layer lining holes 14 and the lower layer lining holes 15 are preferably arranged alternately.

The bottom lining can also have multiple layers, but there is at least one layer. There are multiple lining holes on the bottom lining, so that the space above the bottom lining communicates with the space below. The lining holes on the multi-layer lining are the best. Interlaced with each other.

The side lining 9 preferably includes multiple parts, and the multi-part side linings are superimposed to form a whole side lining; each layer of the bottom lining is respectively connected with a part of the side lining. This facilitates the processing, installation and replacement of the entire lining.

The side liner 9 in FIG. 2 includes upper and lower parts, wherein the upper part is connected with the upper layer inner liner 12 ; the lower part is connected with the lower layer inner liner 13 .

In the reaction chamber of the present invention, the reaction chamber 11 is provided with the above-mentioned reaction chamber lining. Wherein, the side lining 9 is closely attached to the side wall 3 of the chamber to protect the side wall 3 of the chamber.

The lower edge of the side liner 9 abuts against the bottom wall 16 of the chamber, while the bottom liner is higher than the bottom wall 16 of the chamber, dividing the reaction chamber 11 into a space above and a space below the bottom liner.

The walls of the reaction chamber 11 are provided with gas inlets 4 , 5 and gas outlets 6 . Wherein, the air inlets 4 and 5 communicate with the upper space of the bottom lining; the air outlet 6 communicates with the lower space of the bottom lining.

The air outlet can be arranged on the chamber side wall 3 of the reaction chamber, generally at the lower part; it can also be arranged on the chamber bottom wall 16 of the reaction chamber. In this way, the process gas entering the reaction chamber from the gas inlets 4 and 5 must pass through the lining holes on the bottom lining to be drawn out from the gas outlet. In this way, the flow rate of the gas drawn away tends to be uniform, so as to achieve the purpose of improving the uniformity of the gas flow inside the reaction chamber 11, so that the gas distribution in the reaction chamber 11, especially the space above the bottom lining, is uniform. In addition, the size of each bottom lining in the vertical direction can be designed to be smaller, and the number of bottom linings can be increased to achieve a better effect.

The reaction chamber 11 is provided with an electrostatic chuck 7, on which a wafer 8 can be arranged, and the position of the electrostatic chuck 7 for placing the wafer 8 is preferably located in the upper space of the bottom lining, so that the process gas above the wafer The distribution is more uniform, resulting in a uniform etch rate over the entire wafer surface. When the reaction chamber 11 is used for an etching process, the diameter of the lining holes 14, 15 should be small and able to shield plasma.

The present invention is mainly applicable to reaction chambers of semiconductor processing equipment, and is also applicable to other similar chambers.

The above is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed in the present invention can easily think of changes or Replacement should be covered within the protection scope of the present invention.

Claims (6)

1. A reaction chamber lining, comprising interconnected side linings and bottom linings, characterized in that the bottom lining is higher than the lower edge of the side linings, and there are at least two layers of bottom linings; A plurality of lining holes are opened on the bottom lining, so that the space above the bottom lining communicates with the space below; The two-layer lining includes an upper lining and a lower lining; The upper lining has a plurality of upper lining holes; The lower lining has a plurality of lower lining holes; The lining holes of the upper layer and the lining holes of the lower layer are alternately arranged. 2. The reaction chamber lining according to claim 1, wherein the side lining comprises multiple parts, and the side linings of multiple parts are superimposed on each other to form a whole side lining; the bottom lining of each layer Connect with a part of the side lining respectively. 3. A reaction chamber, the wall of the reaction chamber is provided with an air inlet and an air outlet, it is characterized in that the reaction chamber lining according to claim 1 or 2 is arranged in the reaction chamber; The air inlet communicates with the upper space of the bottom lining; The air outlet communicates with the space below the bottom lining. 4. The reaction chamber according to claim 3, wherein the gas outlet is provided on the side wall of the reaction chamber. 5. The reaction chamber according to claim 3, wherein the gas outlet is provided on the bottom wall of the reaction chamber. 6. The reaction chamber according to claim 3, wherein an electrostatic chuck is provided in the reaction chamber, and the electrostatic chuck is used for placing a wafer, and the electrostatic chuck is used for placing the wafer The position is located in the upper space of the bottom lining.

Images