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CN100561813C - Suppression method of hot-swapping inrush current in post-stage circuit and its buffered asynchronous start-up circuit - Google Patents

Suppression method of hot-swapping inrush current in post-stage circuit and its buffered asynchronous start-up circuit Download PDF

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CN100561813C
CN100561813C CNB2006100626862A CN200610062686A CN100561813C CN 100561813 C CN100561813 C CN 100561813C CN B2006100626862 A CNB2006100626862 A CN B2006100626862A CN 200610062686 A CN200610062686 A CN 200610062686A CN 100561813 C CN100561813 C CN 100561813C
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inrush current
current suppression
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CN101150249A (en
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唐志杰
骆春敏
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Shenzhen Mindray Bio Medical Electronics Co Ltd
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Abstract

本发明公开了一种后级电路热插拔冲击电流抑制方法及其缓冲异步启动电路,缓冲异步启动电路在冲击电流抑制电路的基础上,增设饱和导通触发电路检测冲击电流抑制电路的输出电压,判断出其工作状态,只有检测到冲击电流抑制电路饱和导通后,才给出启动信号,让后级电路开始工作,因此可有效地防止后级电路在冲击电流抑制电路工作于线性区时启动,避免造成隔离输出电压的上升沿出现严重的振荡,有效保护整个系统。本发明可广泛应用于直流输入的热插拔的后级电路中,以缓冲后级电路在热插拔时的冲击电流。

Figure 200610062686

The invention discloses a post-circuit hot-swapping surge current suppression method and its buffer asynchronous start-up circuit. The buffer asynchronous start-up circuit is based on the surge current suppression circuit, and a saturated conduction trigger circuit is added to detect the output voltage of the surge current suppression circuit. , to determine its working state, only after detecting that the inrush current suppression circuit is saturated and conducting, will it give a start signal to let the subsequent circuit start to work, so it can effectively prevent the subsequent stage circuit when the inrush current suppression circuit works in the linear region Start up, to avoid severe oscillation on the rising edge of the isolated output voltage, and effectively protect the entire system. The invention can be widely used in the hot-plug post-circuit of DC input to buffer the impact current of the post-circuit during hot-plug.

Figure 200610062686

Description

后级电路热插拔冲击电流抑制方法及其缓冲异步启动电路 Suppression method of hot-swapping inrush current in post-stage circuit and its buffered asynchronous start-up circuit

【技术领域】 【Technical field】

本发明涉及一种启动电路,特别涉及一种防止电流冲击的启动电路。The invention relates to a starting circuit, in particular to a starting circuit for preventing current impact.

【背景技术】 【Background technique】

带有大的输入电容的电路模块,因为输入级有很大的容性负载,会使得模块在热插拔时,冲击电流非常大,容易使插针打火,降低插针的性能与使用寿命;同时,过大的冲击电流有可能引起系统的关机、系统供电不稳或对系统或模块内部元件造成损伤,因此常常引入缓冲启动电路来限制输入电容对系统的电流冲击。现有技术中,抑制热插拔时冲击电流的缓冲启动电路采用如下限流方法:For circuit modules with large input capacitors, because the input stage has a large capacitive load, the impact current will be very large when the module is hot-swapped, which will easily cause the pins to ignite and reduce the performance and service life of the pins. ; At the same time, excessive inrush current may cause system shutdown, system power supply instability, or damage to system or internal components of the module. Therefore, a buffer startup circuit is often introduced to limit the current impact of the input capacitor on the system. In the prior art, the buffer startup circuit that suppresses the inrush current during hot swap adopts the following current limiting method:

串联电阻法:即在输入端串联大电阻(一般为绕线电阻),但是此时电阻上的功耗也就变大,因此要选择折衷的电阻值,使冲击电流和电阻上的功耗都在允许的范围之内。Series resistance method: that is, a large resistance (usually a wire-wound resistance) is connected in series at the input end, but at this time, the power consumption on the resistance becomes larger, so a compromise resistance value should be selected so that the impact current and the power consumption on the resistance are equal. within the allowed range.

热敏电阻法:原理同串联电阻法,但因为热敏电阻的负温度系数的特性,随着其自身的发热阻值变小,功耗也就减小;由于热敏电阻在电源第一次启动后要过一段时间才达到其工作态电阻值,那么低输入时可能导致电源工作在打嗝状态。Thermistor method: The principle is the same as the series resistance method, but because of the negative temperature coefficient of the thermistor, as its own heating resistance becomes smaller, the power consumption is also reduced; It takes a while to reach its working state resistance value after startup, so low input may cause the power supply to work in a hiccup state.

有源冲击电流限制法:利用MOS场效应管导通阻抗低和驱动简单的特点,在周围加上少量元器件就可以做成冲击电流抑制电路。基本思想是在MOS场效应管的栅极与漏极之间并入电容,就是让MOSET的栅极与源极的电压缓慢上升,从而让MOS场效应管逐渐开通,实现模块的热插拔时的缓冲。Active inrush current limiting method: Utilizing the characteristics of low on-resistance and simple driving of MOS field effect transistors, an inrush current suppression circuit can be made by adding a small number of components around it. The basic idea is to incorporate a capacitor between the gate and drain of the MOS field effect transistor, which is to let the voltage of the gate and source of the MOSET rise slowly, so that the MOS field effect transistor is gradually turned on, and the hot swap of the module is realized. buffer.

利用专用集成电路控制冲击电流和实现热插拔功能:现有的如LinearTechnology公司的LT1640芯片就提供简单而有效的冲击电流控制方法,这种基于MOS场效应管的缓冲启动电路,对输入的电流进行检测,利用取样电阻所检测到的电流来控制MOS场效应管的开通程度。如图1所示:在上电瞬间,MOS场效应管Q1保持在关断状态,将未充电电容C3、DC/DC电源滤波器电容和输入电源隔离,随着Q1的慢慢导通,电容在控制状态下慢慢充电,只有在电容充满电后,芯片才给出开关信号,让DC/DC电源开始工作。Use ASIC to control the inrush current and realize the hot swap function: the existing LT1640 chip of Linear Technology Company provides a simple and effective inrush current control method. For detection, the current detected by the sampling resistor is used to control the turn-on degree of the MOS field effect transistor. As shown in Figure 1: at the moment of power-on, the MOS field effect transistor Q1 remains in the off state, which isolates the uncharged capacitor C3, the DC/DC power filter capacitor and the input power supply. As Q1 is turned on slowly, the capacitor Charge slowly under control, and only after the capacitor is fully charged, the chip gives a switch signal to make the DC/DC power supply start to work.

以上现有技术中的串联电阻法、热敏电阻法的电路实现大大降低了模块的效率,并且电阻的串入使得模块在正常工作时输入阻抗加大,不利于模块的动态性能。而利用专用集成电路的缓冲电路,基于对输入电流的控制与输出电压的检测,性能虽好,但电路复杂,成本高;并且由于电流检测的原因,使得本缓冲启动电路在工作时由于检测电阻消耗功率的原因,降低了系统的供电效率。The circuit implementation of the series resistance method and the thermistor method in the above prior art greatly reduces the efficiency of the module, and the series connection of the resistance increases the input impedance of the module during normal operation, which is not conducive to the dynamic performance of the module. However, the buffer circuit using an ASIC, based on the control of the input current and the detection of the output voltage, has good performance, but the circuit is complicated and the cost is high; The reason for power consumption reduces the power supply efficiency of the system.

在采用MOS场效应管限制冲击电流的有源冲击电流限制法中,利用的是MOS场效应管线性放大区对冲击电流进行限制,而输入电容电压的上升到系统开始启动工作时,MOS场效应管不一定过渡完线性放大区,在MOS场效应管未过渡完线性放大区时,系统的启动会导致输入电容上的电压出现凹陷,造成隔离输出电压的上升沿出现严重的振荡。In the active inrush current limiting method that uses MOS field effect tubes to limit the inrush current, the MOS field effect tube linear amplification area is used to limit the inrush current, and when the input capacitor voltage rises to the start of the system, the MOS field effect The tube does not necessarily complete the transition to the linear amplification area. When the MOS field effect tube does not complete the transition to the linear amplification area, the startup of the system will cause the voltage on the input capacitor to sag, causing serious oscillations on the rising edge of the isolated output voltage.

【发明内容】 【Content of invention】

本发明的目的就是为了克服以上现有技术中的不足,提供一种后级电路热插拔冲击电流抑制方法及其缓冲异步启动电路,可有效抑制热插拔时的冲击电流,而且满足后级电路内部正常启动的要求,工作效率高。The purpose of the present invention is to overcome the deficiencies in the prior art above, and provide a method for suppressing the surge current of hot-swapping in the subsequent stage circuit and its buffer asynchronous start-up circuit, which can effectively suppress the surge current during hot-swapping, and meet the requirements of the downstream circuit. The requirements for normal start-up inside the circuit and high working efficiency.

为实现上述目的,本发明提出一种后级电路热插拔冲击电流抑制方法,包括如下步骤:1)利用冲击电流抑制电路,实现输出电流的缓慢上升,并限制输出电流的最大输出值;2)利用饱和导通触发电路实时监测所述冲击电流抑制电路的导通状态,当所述冲击电流抑制电路饱和导通时,所述饱和导通触发电路发出开机信号,启动后级电路。In order to achieve the above object, the present invention proposes a method for suppressing the inrush current of the post circuit hot swap, comprising the following steps: 1) using the inrush current suppression circuit to realize the slow rise of the output current and limit the maximum output value of the output current; 2 ) using a saturated conduction trigger circuit to monitor the conduction state of the inrush current suppression circuit in real time, and when the inrush current suppression circuit is saturated and conducted, the saturated conduction trigger circuit sends a power-on signal to start the subsequent circuit.

上述的方法,所述冲击电流抑制电路包括MOS场效应管和并联于其栅极与源极之间的电阻和电容,可以根据后级电路输入电容的大小,选择MOS场效应管工作于线性放大区的时间。所述饱和导通触发电路根据对MOS场效应管的栅极源极之间电压的监测,判断MOS场效应管工作状态,给出后级电路启动信号,防止后级电路在MOS场效应管工作于线性区时启动。所述冲击电流抑制电路的最大电流限制值、电流上升速率可通过对所述冲击电流抑制电路选择不同的并联于其栅极与源极之间的电容来实现。所述饱和导通触发电路通过电压取样电路实时监测栅极源极之间电压,当取样电压达到预定值时,启动开关电路,所述开关电路输出启动信号给后级电路。In the above method, the inrush current suppression circuit includes a MOS field effect transistor and a resistor and a capacitor connected in parallel between its gate and source, and the MOS field effect transistor can be selected to work in linear amplification according to the size of the input capacitance of the subsequent stage circuit. zone time. The saturated conduction trigger circuit judges the working state of the MOS field effect tube according to the monitoring of the voltage between the gate and the source of the MOS field effect tube, and provides a starting signal for the subsequent stage circuit to prevent the subsequent stage circuit from working in the MOS field effect tube. Start in the linear region. The maximum current limit value and current rising rate of the inrush current suppression circuit can be realized by selecting different capacitances connected in parallel between the gate and the source of the inrush current suppression circuit. The saturated conduction trigger circuit monitors the voltage between the gate and the source in real time through the voltage sampling circuit, and when the sampling voltage reaches a predetermined value, the switch circuit is started, and the switch circuit outputs a start signal to the subsequent circuit.

一种热插拔冲击电流抑制的缓冲异步启动电路,包括冲击电流抑制电路,实现输出电流缓慢上升;还包括饱和导通触发电路,实时监测所述冲击电流抑制电路的导通状态,当所述冲击电流抑制电路饱和导通时,所述饱和导通触发电路发出开机信号,启动后级电路。A buffered asynchronous startup circuit for hot-swap inrush current suppression, including an inrush current suppression circuit to realize a slow rise in output current; a saturated conduction trigger circuit that monitors the conduction state of the inrush current suppression circuit in real time, and when the When the inrush current suppression circuit is saturated and turned on, the saturated conduction trigger circuit sends a power-on signal to start the subsequent circuit.

上述的缓冲异步启动电路,所述饱和导通触发电路包括电压取样电路和开关电路;所述电压取样电路一端与所述冲击电流抑制电路连接,取样端与所述开关电路控制端连接;所述冲击电流抑制电路饱和导通时,所述电压取样电路取样端电压触发所述开关电路导通,发出开机信号,启动后级电路。In the buffered asynchronous starting circuit described above, the saturated conduction trigger circuit includes a voltage sampling circuit and a switch circuit; one end of the voltage sampling circuit is connected to the inrush current suppression circuit, and the sampling end is connected to the control end of the switch circuit; When the inrush current suppression circuit is saturated and turned on, the voltage at the sampling terminal of the voltage sampling circuit triggers the conduction of the switch circuit, sends a power-on signal, and starts the subsequent circuit.

上述的缓冲异步启动电路,所述冲击电流抑制电路包括MOS场效应管、充放电容和充放电阻,所述充放电容和充放电阻并联于所述MOS场效应管的栅极与源极之间,所述MOS场效应管的栅极与源极分别与输入电压高低电位端耦合;所述饱和导通触发电路具有二输入端并联于所述MOS场效应管的栅极与源极之间。In the buffered asynchronous starting circuit described above, the inrush current suppression circuit includes a MOS field effect transistor, a charging and discharging capacitor and a charging and discharging resistor, and the charging and discharging capacitor and the charging and discharging resistor are connected in parallel to the gate and source of the MOS field effect transistor Between, the gate and the source of the MOS field effect transistor are respectively coupled with the high and low potential terminals of the input voltage; the saturated conduction trigger circuit has two input terminals connected in parallel between the gate and the source of the MOS field effect transistor between.

上述的缓冲异步启动电路,所述电压取样电路包括第一分压电阻、稳压管和取样电阻,三者依次串联后连接于所述MOS场效应管栅极与源极之间;所述稳压管、取样电阻的共接点为所述取样端,与所述开关电路的控制端连接。所述开关电路包括第一开关管、第二分压电阻和第二开关管;所述第一开关管基极与所述电压取样电路取样端连接,射极接低电位端;所述第二分压电阻连接于所述第一开关管集电极与第二开关管基极之间;所述第二开关管发射极接高电位端,其集电极用于连接后级电路。In the buffered asynchronous startup circuit described above, the voltage sampling circuit includes a first voltage dividing resistor, a voltage stabilizing tube and a sampling resistor, and the three are connected in series successively between the grid and the source of the MOS field effect transistor; the stabilizing The common point of the pressure tube and the sampling resistor is the sampling terminal, which is connected to the control terminal of the switching circuit. The switch circuit includes a first switch tube, a second voltage dividing resistor and a second switch tube; the base of the first switch tube is connected to the sampling end of the voltage sampling circuit, and the emitter is connected to the low potential end; the second The voltage dividing resistor is connected between the collector of the first switch tube and the base of the second switch tube; the emitter of the second switch tube is connected to the high potential end, and its collector is used to connect to the subsequent circuit.

本发明增设饱和导通触发电路检测冲击电流抑制电路的输出电压,判断出其工作状态,只有检测到冲击电流抑制电路饱和导通后,才给出启动信号,让后级电路开始工作,因此可有效地防止后级电路在冲击电流抑制电路工作于线性区时启动,避免造成隔离输出电压的上升沿出现严重的振荡,有效保护整个系统。本发明可广泛应用于直流输入的热插拔的后级电路中,以缓冲后级电路在热拔插时的冲击电流。In the present invention, a saturated conduction trigger circuit is added to detect the output voltage of the inrush current suppression circuit, and its working state is judged. Only after the inrush current suppression circuit is detected to be saturated and conducted, a start signal is given to allow the subsequent stage circuit to start working, so it can be Effectively prevent the subsequent circuit from starting when the inrush current suppression circuit works in the linear region, avoid severe oscillation on the rising edge of the isolated output voltage, and effectively protect the entire system. The invention can be widely used in the hot-plug post-circuit of DC input to buffer the impact current of the post-stage circuit during hot plug-in.

与采用专用集成芯片实现对冲击电流的抑制不同,本发明并非基于冲击电流的检测方法来进行缓冲控制,而是通过检测MOS场效应管的栅源极电压来实现缓冲启动,即采用电压检测方式,只用普通的三极管和MOS场效应管以及稳压管,加上电阻电容就能实现,所用的元器件较少,电路也较简单,成本显著降低。Different from using a dedicated integrated chip to suppress the inrush current, the present invention does not perform buffer control based on the detection method of the inrush current, but realizes buffer startup by detecting the gate-source voltage of the MOS field effect transistor, that is, adopts the voltage detection method , It can be realized only by using ordinary transistors, MOS field effect transistors and voltage regulator tubes, plus resistors and capacitors. The components used are less, the circuit is simpler, and the cost is significantly reduced.

【附图说明】 【Description of drawings】

图1基于控制芯片的冲击电流控制电路实例。Figure 1 is an example of an inrush current control circuit based on a control chip.

图2利用N-MOS场效应管的缓冲异步启动电路原理框图。Figure 2 uses the block diagram of the buffer asynchronous start circuit of N-MOS field effect transistor.

图3利用P-MOS场效应管的缓冲异步启动电路原理框图。Figure 3 uses the block diagram of the buffer asynchronous start circuit of the P-MOS field effect transistor.

图4N-MOS场效应管的缓冲异步启动原理电路。Figure 4 N-MOS FET buffer asynchronous startup principle circuit.

【具体实施方式】 【Detailed ways】

下面通过具体的实施例并结合附图对本发明作进一步详细的描述。The present invention will be described in further detail below through specific embodiments and in conjunction with the accompanying drawings.

本发明原理框图分别如图2与图3所示,在由MOS场效应管、充放电容、充放电阻组成的冲击电流抑制电路输出端,增设一饱和导通触发电路,实时监测冲击电流抑制电路的导通状态,当冲击电流抑制电路饱和导通时,所述饱和导通触发电路发出开机信号,启动后级电路。The principle block diagram of the present invention is shown in Figure 2 and Figure 3 respectively, at the output end of the surge current suppression circuit composed of MOS field effect transistor, charging and discharging capacitor, and charging and discharging resistor, a saturation conduction trigger circuit is added to monitor the surge current suppression in real time In the conduction state of the circuit, when the inrush current suppression circuit is saturated and conducted, the saturated conduction trigger circuit sends a power-on signal to start the subsequent circuit.

如图4所示为一种具体的实施方式。饱和导通触发电路包括电压取样电路、开关电路;电压取样电路一端与冲击电流抑制电路连接,取样端与开关电路控制端连接;所述冲击电流抑制电路饱和导通时,电压取样电路取样端电压触发开关电路导通,发出开机信号,启动后级电路。电压取样电路包括第一分压电阻R3、稳压管ZD1、取样电阻R4,三者依次串联后连接于MOS场效应管栅极与源极之间;稳压管ZD1、取样电阻R4的共接点为电压取样端,与开关电路的控制端连接。开关电路包括第一开关管Q2、第二分压电阻R5、第二开关管Q3;第一开关管Q2基极与电压取样电路电压取样端连接,射极接低电位端;第二分压电阻R5连接于第一开关管Q2集电极与第二开关管Q3基极之间;第二开关管Q3发射极接高电位端,其集电极用于连接后级电路。As shown in Fig. 4, it is a specific implementation manner. The saturation conduction trigger circuit includes a voltage sampling circuit and a switch circuit; one end of the voltage sampling circuit is connected to the surge current suppression circuit, and the sampling end is connected to the control end of the switch circuit; The trigger switch circuit is turned on, and a power-on signal is sent to start the subsequent stage circuit. The voltage sampling circuit includes the first voltage dividing resistor R3, the voltage regulator tube ZD1, and the sampling resistor R4, and the three are connected in series in sequence between the gate and the source of the MOS field effect transistor; the common contact point of the voltage regulator tube ZD1 and the sampling resistor R4 It is the voltage sampling terminal, which is connected with the control terminal of the switch circuit. The switching circuit includes a first switching tube Q2, a second voltage dividing resistor R5, and a second switching tube Q3; the base of the first switching tube Q2 is connected to the voltage sampling end of the voltage sampling circuit, and the emitter is connected to the low potential end; the second voltage dividing resistor R5 is connected between the collector of the first switching tube Q2 and the base of the second switching tube Q3; the emitter of the second switching tube Q3 is connected to the high potential end, and its collector is used to connect to the subsequent circuit.

本方案的工作原理如下:The scheme works as follows:

如图4所示,MOS场效应管Q1的源极S接到输入的低电位端,漏极D与输入电容的低电位脚相连,即通过该MOS场效应管Q1把输入电容、电源模块整体与输入电源部分隔离开来,MOS场效应管的栅极G与源极S之间引入充放电容C1和充放电阻R2的并联网络,MOS场效应管的驱动由输入串接电阻R1到栅极G;这种功能的电路已经可以实现热插拔冲击电流的抑制。As shown in Figure 4, the source S of the MOS field effect transistor Q1 is connected to the low potential end of the input, and the drain D is connected to the low potential pin of the input capacitor. Separated from the input power supply, a parallel network of charge and discharge capacitor C1 and charge and discharge resistor R2 is introduced between the gate G and source S of the MOS field effect transistor, and the drive of the MOS field effect transistor is connected by the input series resistor R1 to the gate Pole G; the circuit with this function can already realize the suppression of hot-swapping surge current.

上电瞬间,由于输入电容C2两端的电压不能突变,此时输入电压加在MOS场效应管Q1的两端,MOS场效应管Q1的漏极D电压与输入电压相等;同时,输入电源通过MOS场效应管栅极控制电路上的电阻R1向栅极G与源极S间并联的充放电容C1充电,使得MOS场效应管Q1栅极与源极间的电压以设定的速率缓慢上升,使得MOS场效应管由截止向线性导通过渡;在线性工作区时,MOS场效应管将根据自身的放大特性限制漏极D与源极S之间导通的最大电流,从而防止了热插拔时的冲击电流,选择不同的缓上电的电容C1,可以获得栅-源极电压的上升速率,从而获得不同的电流限制值。当MOS场效应管Q1栅极与源极电压足够高时,MOS场效应管Q1才进入饱和导通。但电容C1的选择也必须参考输入电容的大小,以使得电容C1上的电压使MOS场效应管在饱和导通前,输入电容的电压已经达到输入电压的90%以上。At the moment of power-on, since the voltage across the input capacitor C2 cannot change abruptly, the input voltage is applied to both ends of the MOS field effect transistor Q1 at this time, and the drain D voltage of the MOS field effect transistor Q1 is equal to the input voltage; at the same time, the input power passes through the MOS The resistor R1 on the field effect transistor gate control circuit charges the charging and discharging capacitor C1 connected in parallel between the gate G and the source S, so that the voltage between the gate and the source of the MOS field effect transistor Q1 rises slowly at a set rate, Make the MOS field effect transistor transition from cut-off to linear conduction; in the linear working area, the MOS field effect transistor will limit the maximum current conducted between the drain D and the source S according to its own amplification characteristics, thus preventing hot plugging The inrush current when unplugging, choose different capacitors C1 for slow power-on, can obtain the rising rate of the gate-source voltage, and thus obtain different current limit values. When the gate and source voltages of the MOS field effect transistor Q1 are sufficiently high, the MOS field effect transistor Q1 enters saturation conduction. However, the selection of the capacitor C1 must also refer to the size of the input capacitor, so that the voltage on the capacitor C1 makes the MOS field effect transistor saturated and turned on, and the voltage of the input capacitor has reached more than 90% of the input voltage.

本设计可在原理不变的情况下,更改饱和导通触发方法实现本缓冲启动的功能。This design can change the saturated conduction trigger method to realize the function of buffer startup without changing the principle.

Claims (10)

1、一种后级电路热插拔冲击电流抑制方法,包括如下步骤:1)利用冲击电流抑制电路,实现输出电流的缓慢上升,并限制输出电流的最大输出值;2)利用饱和导通触发电路实时监测所述冲击电流抑制电路的导通状态,当所述冲击电流抑制电路饱和导通时,所述饱和导通触发电路发出开机信号,启动后级电路。1. A post-stage circuit hot-swapping inrush current suppression method, comprising the steps of: 1) using an inrush current suppression circuit to realize a slow rise in output current and limiting the maximum output value of the output current; 2) using a saturated conduction trigger The circuit monitors the conduction state of the inrush current suppression circuit in real time, and when the inrush current suppression circuit is saturated and turned on, the saturated conduction trigger circuit sends a power-on signal to start the subsequent circuit. 2、如权利要求1所述的方法,其特征是:所述冲击电流抑制电路包括MOS场效应管和并联于其栅极与源极之间的电阻和电容,可以根据后级电路输入电容的大小,选择MOS场效应管工作于线性放大区的时间。2. The method according to claim 1, characterized in that: the inrush current suppression circuit includes a MOS field effect transistor and a resistor and a capacitor connected in parallel between its gate and source, which can be input according to the capacitance of the subsequent circuit Size, select the time when the MOS field effect tube works in the linear amplification area. 3、如权利要求2所述的方法,其特征是:所述饱和导通触发电路根据对MOS场效应管的栅极源极之间电压的监测,判断MOS场效应管工作状态,给出后级电路启动信号,防止后级电路在MOS场效应管工作于线性区时启动。3. The method according to claim 2, characterized in that: the saturated conduction trigger circuit judges the working state of the MOS field effect transistor according to the monitoring of the voltage between the gate and the source of the MOS field effect transistor, and gives the following The stage circuit start signal prevents the subsequent stage circuit from starting when the MOS field effect tube works in the linear region. 4、如权利要求2所述的方法,其特征是:所述冲击电流抑制电路的最大电流限制值、电流上升速率可通过对所述冲击电流抑制电路选择不同的并联于其栅极与源极之间的电容来实现。4. The method according to claim 2, characterized in that: the maximum current limit value and the current rising rate of the inrush current suppression circuit can be connected in parallel with the gate and source of the inrush current suppression circuit by selecting different Capacitance between to achieve. 5、如权利要求3所述的方法,其特征是:所述饱和导通触发电路通过电压取样电路实时监测栅极源极之间电压,当取样电压达到预定值时,启动开关电路,所述开关电路输出启动信号给后级电路。5. The method according to claim 3, characterized in that: the saturated conduction trigger circuit monitors the voltage between the gate and the source in real time through the voltage sampling circuit, and when the sampling voltage reaches a predetermined value, the switch circuit is activated, and the The switching circuit outputs a starting signal to a subsequent stage circuit. 6、一种热插拔冲击电流抑制的缓冲异步启动电路,包括冲击电流抑制电路,实现输出电流缓慢上升;其特征是:还包括饱和导通触发电路,实时监测所述冲击电流抑制电路的导通状态,当所述冲击电流抑制电路饱和导通时,所述饱和导通触发电路发出开机信号,启动后级电路。6. A buffered asynchronous startup circuit for hot-swapping inrush current suppression, including an inrush current suppression circuit to realize a slow rise in output current; it is characterized in that it also includes a saturated conduction trigger circuit to monitor the conduction of the inrush current suppression circuit in real time. In the on state, when the inrush current suppression circuit is saturated and turned on, the saturated conduction trigger circuit sends a power-on signal to start the subsequent circuit. 7、如权利要求6所述的缓冲异步启动电路,其特征是:所述饱和导通触发电路包括电压取样电路和开关电路;所述电压取样电路一端与所述冲击电流抑制电路连接,取样端与所述开关电路控制端连接;所述冲击电流抑制电路饱和导通时,所述电压取样电路取样端电压触发所述开关电路导通,发出开机信号,启动后级电路。7. The buffered asynchronous starting circuit according to claim 6, characterized in that: the saturated conduction trigger circuit includes a voltage sampling circuit and a switch circuit; one end of the voltage sampling circuit is connected to the inrush current suppression circuit, and the sampling end Connected to the control terminal of the switch circuit; when the inrush current suppression circuit is saturated and turned on, the voltage at the sampling terminal of the voltage sampling circuit triggers the switch circuit to be turned on, and sends a power-on signal to start the subsequent circuit. 8、如权利要求7所述的缓冲异步启动电路,其特征是:所述冲击电流抑制电路包括MOS场效应管、充放电容和充放电阻,所述充放电容和充放电阻并联于所述MOS场效应管的栅极与源极之间,所述MOS场效应管的栅极与源极分别与输入电压高低电位端耦合;所述饱和导通触发电路具有二输入端并联于所述MOS场效应管的栅极与源极之间。8. The buffer asynchronous starting circuit according to claim 7, characterized in that: the inrush current suppression circuit includes a MOS field effect transistor, a charging and discharging capacitor and a charging and discharging resistor, and the charging and discharging capacitor and the charging and discharging resistor are connected in parallel to the Between the gate and the source of the MOS field effect transistor, the gate and the source of the MOS field effect transistor are respectively coupled to the high and low potential ends of the input voltage; the saturated conduction trigger circuit has two input terminals connected in parallel to the Between the gate and source of the MOS field effect transistor. 9、如权利要求8所述的缓冲异步启动电路,其特征是:所述电压取样电路包括第一分压电阻(R3)、稳压管(ZD1)和取样电阻(R4),三者依次串联后连接于所述MOS场效应管栅极与源极之间;所述稳压管(ZD1)、取样电阻(R4)的共接点为所述取样端,与所述开关电路的控制端连接。9. The buffered asynchronous starting circuit according to claim 8, characterized in that: the voltage sampling circuit includes a first voltage dividing resistor (R3), a voltage regulator tube (ZD1) and a sampling resistor (R4), which are connected in series in sequence Afterwards, it is connected between the gate and the source of the MOS field effect transistor; the common contact point of the voltage regulator tube (ZD1) and the sampling resistor (R4) is the sampling terminal, which is connected to the control terminal of the switching circuit. 10、如权利要求9所述的缓冲异步启动电路,其特征是:所述开关电路包括第一开关管(Q2)、第二分压电阻(R5)和第二开关管(Q3);所述第一开关管(Q2)基极与所述电压取样电路取样端连接,射极接低电位端;所述第二分压电阻(R5)连接于所述第一开关管(Q2)集电极与第二开关管(Q3)基极之间;所述第二开关管(Q3)发射极接高电位端,其集电极用于连接后级电路。10. The buffered asynchronous starting circuit according to claim 9, characterized in that: the switch circuit includes a first switch tube (Q2), a second voltage dividing resistor (R5) and a second switch tube (Q3); The base of the first switching tube (Q2) is connected to the sampling end of the voltage sampling circuit, and the emitter is connected to the low potential end; the second voltage dividing resistor (R5) is connected to the collector of the first switching tube (Q2) and between the bases of the second switching tube (Q3); the emitter of the second switching tube (Q3) is connected to the high potential end, and its collector is used to connect to the subsequent stage circuit.
CNB2006100626862A 2006-09-18 2006-09-18 Suppression method of hot-swapping inrush current in post-stage circuit and its buffered asynchronous start-up circuit Expired - Fee Related CN100561813C (en)

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