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CN100501494C - MEMS device fabricated on pre-patterned substrate - Google Patents

MEMS device fabricated on pre-patterned substrate Download PDF

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CN100501494C
CN100501494C CNB2005800312341A CN200580031234A CN100501494C CN 100501494 C CN100501494 C CN 100501494C CN B2005800312341 A CNB2005800312341 A CN B2005800312341A CN 200580031234 A CN200580031234 A CN 200580031234A CN 100501494 C CN100501494 C CN 100501494C
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electrode
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substrate
display device
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CN101023385A (en
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克拉伦斯·徐
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Qualcomm MEMS Technologies Inc
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IDC LLC
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Abstract

A MEMS device is fabricated on a pre-patterned substrate having a recess formed therein. A lower electrode is deposited on the substrate and separated from the orthogonal upper electrode by a cavity. The upper electrode is configured to be movable to modulate reflected light. A semi-reflective layer and a transparent material are formed over the movable upper electrode.

Description

制作于经预先图案化的衬底上的MEMS装置 MEMS devices fabricated on pre-patterned substrates

技术领域 technical field

本发明的技术领域涉及微机电系统(MEMS)及对此种系统的封装。更具体而言,本发明的技术领域涉及干涉式调制器及在一预先图案化衬底上制作此种干涉式调制器的方法。The technical field of the invention relates to microelectromechanical systems (MEMS) and the packaging of such systems. More specifically, the technical field of the invention relates to interferometric modulators and methods of fabricating such interferometric modulators on a pre-patterned substrate.

背景技术 Background technique

微机电系统(MEMS)包括微机械元件、激活器及电子元件。微机械元件可采用沉积、蚀刻或其他可蚀刻掉衬底及/或所沉积材料层的若干部分或可添加若干层以形成电和机电装置的微机械加工工艺制成。一种类型的MEMS装置被称为干涉式调制器。如本文中所使用,术语“干涉式调制器”或“干涉式光调制器”是指一种利用光学干涉原理有选择地吸收及/或反射光的装置。在某些实施例中,干涉式调制器可包含一对导电板,该对导电板中的一或二者可全部或部分地透明及/或为反射性,且在施加一个适当电信号时能够相对移动。在一特定的实施例中,一个板可包含一沉积在一衬底上的静止层,而另一个板可包含一通过一气隙或空腔与该静止层隔开的金属薄膜。如同本文中所更详细说明,一个板相对于另一个板的位置可改变该干涉式调制器上入射光的光学干涉。这些装置具有广泛的应用范围,且在所属领域中,利用及/或修改这些类型装置的特性、以使其性能可用于改善现有产品及制造目前尚未开发的新产品将颇为有益。Microelectromechanical systems (MEMS) include micromechanical components, actuators, and electronics. Micromechanical elements may be fabricated using deposition, etching, or other micromachining processes that etch away portions of substrates and/or deposited material layers, or that add layers to form electrical and electromechanical devices. One type of MEMS device is known as an interferometric modulator. As used herein, the term "interferometric modulator" or "interferometric light modulator" refers to a device that selectively absorbs and/or reflects light using the principles of optical interference. In some embodiments, an interferometric modulator may comprise a pair of conductive plates, one or both of which may be fully or partially transparent and/or reflective and capable of relatively mobile. In a particular embodiment, one plate may comprise a stationary layer deposited on a substrate, while the other plate may comprise a thin metal film separated from the stationary layer by an air gap or cavity. As explained in more detail herein, the position of one plate relative to another can change the optical interference of light incident on the interferometric modulator. These devices have a wide range of applications, and it would be beneficial in the art to exploit and/or modify the properties of these types of devices so that their properties can be used to improve existing products and create new ones not currently developed.

发明内容 Contents of the invention

本发明的系统、方法及装置均具有多个方面,任一单个方面均不能单独决定其所期望特性。现在,将简要说明其较主要的特性,但此并不限定本发明的范围。在考虑此讨论内容后,尤其是在阅读标题为“具体实施方式”的部分后,人们即可理解本发明的特性如何提供优于其他显示装置的优点。本文所述实施例提供一种封装结构及一种在环境条件下制造一封装结构的方法。The systems, methods, and devices of the invention each have several aspects, no single one of which is solely responsible for its desirable characteristics. Now, its more main characteristics will be briefly described, but this does not limit the scope of the invention. After considering this discussion, and particularly after reading the section entitled "Detailed Description of Preferred Embodiments," one can understand how the features of this invention provide advantages over other display devices. Embodiments described herein provide a package structure and a method of fabricating a package structure under ambient conditions.

一实施例提供一种制作一微机电系统装置的方法。提供一具有多个沟槽的衬底。在所述衬底上沉积至少一个层,其中所述层在所述沟槽处不连续。在一形成于所述衬底上的第一电极与一第二电极之间形成一第一空腔,其中所述至少一个层包含所述第一电极。One embodiment provides a method of fabricating a MEMS device. A substrate having a plurality of trenches is provided. At least one layer is deposited on the substrate, wherein the layer is discontinuous at the trench. A first cavity is formed between a first electrode formed on the substrate and a second electrode, wherein the at least one layer includes the first electrode.

根据另一实施例,提供一种显示装置,其包括:一其中具有多个凹槽的衬底,一形成于所述衬底的一顶面上的第一电极及一第二电极,一半反射性层;及一形成于铬层上的透明材料。所述第一电极与所述第二电极相互绝缘并通过一第一空腔隔开。所述半反射性层与所述第二电极通过一第二空腔隔开。According to another embodiment, a display device is provided, which includes: a substrate having a plurality of grooves therein, a first electrode and a second electrode formed on a top surface of the substrate, a semi-reflective and a transparent material formed on the chromium layer. The first electrode and the second electrode are insulated from each other and separated by a first cavity. The semi-reflective layer is separated from the second electrode by a second cavity.

根据又一实施例,提供一种形成一微机电系统装置的方法。提供一具有一顶面的衬底,其中在所述顶面中形成多个凹槽。在所述衬底上面沉积至少一个层,其中所述至少一个层包含一第一导电材料且在所述凹槽处不连续,从而在所述顶面上形成所述层的各个行。沉积一第二导电材料,其中所述第二导电材料与所述顶面上的所述第一导电材料正交地定向。According to yet another embodiment, a method of forming a MEMS device is provided. A substrate is provided having a top surface, wherein a plurality of grooves are formed in the top surface. At least one layer is deposited over the substrate, wherein the at least one layer comprises a first conductive material and is discontinuous at the grooves, forming individual rows of the layer on the top surface. A second conductive material is deposited, wherein the second conductive material is oriented orthogonally to the first conductive material on the top surface.

根据另一实施例,提供一种显示装置。所述显示装置包括:一其中形成有多个凹槽的衬底,一形成于所述衬底一顶面上以用于反射光的第一反射构件及一用于反射光的第二反射构件,一与所述第二反射构件相隔一第二空腔的半反射性层,及一用于透射光的观看构件。所述第一反射构件与所述第二反射构件相互绝缘并相隔一第一空腔,且所述观看构件形成于所述半反射性层上面。According to another embodiment, a display device is provided. The display device includes: a substrate having a plurality of grooves formed therein, a first reflection member formed on a top surface of the substrate for reflecting light, and a second reflection member for reflecting light , a semi-reflective layer separated from the second reflective member by a second cavity, and a viewing member for transmitting light. The first reflective member and the second reflective member are insulated from each other and separated by a first cavity, and the viewing member is formed on the semi-reflective layer.

附图说明 Description of drawings

根据下文说明及附图(未按比例绘制)将易知本发明的这些及其他方面,这些附图旨在例示而非限定本发明,附图中:These and other aspects of the invention will become apparent from the following description and accompanying drawings (not drawn to scale), which are intended to illustrate rather than limit the invention, in which:

图1为一等轴图,其显示一干涉式调制器显示器的一实施例的一部分,其中一第一干涉式调制器的一可移动反射层处于一松弛位置,且一第二干涉式调制器的一可移动反射层处于一受激活位置。Figure 1 is an isometric view showing a portion of an embodiment of an interferometric modulator display with a movable reflective layer of a first interferometric modulator in a relaxed position and a second interferometric modulator A movable reflective layer is in an activated position.

图2为一系统方块图,其图解说明一包含一3×3干涉式调制器显示器的电子装置的一实施例。2 is a system block diagram illustrating an embodiment of an electronic device including a 3x3 interferometric modulator display.

图3为图1所示干涉式调制器的一实例性实施例的可移动镜面位置与所施加电压的关系图。3 is a graph of movable mirror position versus applied voltage for an example embodiment of the interferometric modulator shown in FIG. 1 .

图4为一组可用于驱动干涉式调制器显示器的行和列电压的示意图。Figure 4 is a schematic diagram of a set of row and column voltages that may be used to drive an interferometric modulator display.

图5A图解说明图2所示3 x 3干涉式调制器显示器中的一个实例性显示数据帧。FIG. 5A illustrates an example display data frame in the 3×3 interferometric modulator display shown in FIG. 2 .

图5B图解说明可用于写入图5A所示帧的行信号及列信号的一个实例性时序图。Figure 5B illustrates one example timing diagram of the row and column signals that may be used to write the frame shown in Figure 5A.

图6A及6B为系统方块图,其图解说明一包含多个干涉式调制器的视觉显示装置的一实施例。6A and 6B are system block diagrams illustrating an embodiment of a visual display device including multiple interferometric modulators.

图7A为一图1所示装置的剖面图。FIG. 7A is a cross-sectional view of the device shown in FIG. 1 .

图7B为一干涉式调制器的一替代实施例的剖面图。Figure 7B is a cross-sectional view of an alternate embodiment of an interferometric modulator.

图7C为一干涉式调制器的另一替代实施例的剖面图。Figure 7C is a cross-sectional view of another alternative embodiment of an interferometric modulator.

图7D为一干涉式调制器的再一替代实施例的剖面图。Figure 7D is a cross-sectional view of yet another alternative embodiment of an interferometric modulator.

图7E为一干涉式调制器的又一替代实施例的剖面图。Figure 7E is a cross-sectional view of yet another alternative embodiment of an interferometric modulator.

图8A-8C为根据一实施例,形成于一经预先图案化的衬底上的干涉式调制器的剖面图。8A-8C are cross-sectional views of interferometric modulators formed on a pre-patterned substrate according to one embodiment.

图8D为根据另一实施例,形成于一经预先图案化的衬底上的干涉式调制器的剖面图。8D is a cross-sectional view of an interferometric modulator formed on a pre-patterned substrate according to another embodiment.

图8E为根据再一实施例,形成于一经预先图案化的衬底上的干涉式调制器的剖面图。8E is a cross-sectional view of an interferometric modulator formed on a pre-patterned substrate according to yet another embodiment.

具体实施方式 Detailed ways

下文详细说明涉及本发明的某些具体实施例。然而,本发明可通过多种不同方式实施。在本说明中,会参照附图,在所有附图中,使用相同的编号来标识相同的部件。根据以下说明容易看出,这些实施例可实施于任一经配置以显示图像(无论是动态图像(例如视频)还是静态图像(例如静止图像),无论是文字图像还是图片图像)的装置中。更具体而言,本发明涵盖:本发明可在例如(但不限于)以下等众多电子装置中实施或与该些电子装置相关联:移动电话、无线装置、个人数据助理(PDA)、手持式计算机或便携式计算机、GPS接收器/导航器、照相机、MP3播放器、摄录机、游戏控制台、手表、钟表、计算器、电视监视器、平板显示器、计算机监视器、汽车显示器(例如里程表显示器等)、驾驶舱控制装置及/或显示器、照相机景物显示器(例如车辆的后视照相机显示器)、电子照片、电子告示牌或标牌、投影仪、建筑结构、包装及美学结构(例如一件珠宝上的图像显示器)。与本文所述MESE装置具有类似结构的MEMS装置也可用于非显示应用,例如用于电子切换装置。The following detailed description refers to certain specific embodiments of the invention. However, the invention can be implemented in many different ways. In this description, reference is made to the accompanying drawings, wherein like numerals are used to identify like parts throughout. As will be readily apparent from the following description, the embodiments may be implemented in any device configured to display images, whether in motion (eg, video) or static images (eg, still images), whether textual or pictorial. More specifically, the present invention contemplates that the present invention may be implemented in or associated with numerous electronic devices such as, but not limited to, the following: mobile phones, wireless devices, personal data assistants (PDAs), handheld Computers or laptops, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, watches, clocks, calculators, TV monitors, flat panel displays, computer monitors, automotive displays (such as odometers displays, etc.), cockpit controls and/or displays, camera scene displays (such as a vehicle’s rear-view camera display), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (such as a piece of jewelry on the image display). MEMS devices of similar structure to the MESE devices described herein may also be used in non-display applications, such as in electronic switching devices.

在图1中图解说明一种包含一干涉式MEMS显示元件的干涉式调制器显示器实施例。在这些装置中,像素处于亮或暗状态。在亮(“on(开)”或“Open(打开)”)状态下,显示元件将入射可见光的一大部分反射至用户。在处于暗(“off(关)”或“Closed(关闭)”)状态下时,显示元件几乎不向用户反射入射可见光。视不同的实施例而定,可颠倒“on(开)”及“off(关)”状态的光反射性质。MEMS像素可经配置以主要在所选色彩下反射,以除黑色和白色之外还可实现彩色显示。An embodiment of an interferometric modulator display including an interferometric MEMS display element is illustrated in FIG. 1 . In these devices, pixels are in either a light or a dark state. In the bright ("on" or "Open") state, the display element reflects a substantial portion of incident visible light to the user. When in the dark ("off" or "Closed") state, the display element reflects little incident visible light to the user. Depending on the different embodiments, the light reflective properties of the "on" and "off" states may be reversed. MEMS pixels can be configured to reflect primarily at selected colors to enable color displays in addition to black and white.

图1为一等轴图,其绘示一视觉显示器中一系列像素中的两个相邻像素,其中每一像素包含一MEMS干涉式调制器。在某些实施例中,一干涉式调制器显示器包含一由这些干涉式调制器构成的行/列阵列。每一干涉式调制器包括一对反射层,该对反射层定位成彼此相距一可变且可控的距离,以形成一至少具有一个可变尺寸的光学谐振腔。在一实施例中,其中一个反射层可在两个位置之间移动。在本文中称为松弛位置的第一位置上,该可移动层定位于距一固定的局部反射层相对远的距离处。在本文中称作受激活位置的第二位置上,可移动反射层定位成更紧密地邻近局部反射层。根据可移动反射层的位置而定,从这两个层反射的入射光会以相长或相消方式干涉,从而形成各像素的总体反射或非反射状态。1 is an isometric view of two adjacent pixels in a series of pixels in a visual display, where each pixel includes a MEMS interferometric modulator. In some embodiments, an interferometric modulator display includes a row/column array of interferometric modulators. Each interferometric modulator includes a pair of reflective layers positioned a variable and controllable distance from each other to form an optical resonant cavity having at least one variable dimension. In one embodiment, one of the reflective layers is movable between two positions. In a first position, referred to herein as the relaxed position, the movable layer is positioned at a relatively large distance from a fixed partially reflective layer. In a second position, referred to herein as the activated position, the movable reflective layer is positioned more closely adjacent the partially reflective layer. Depending on the position of the movable reflective layer, incident light reflected from the two layers interferes constructively or destructively, resulting in an overall reflective or non-reflective state for each pixel.

在图1中所绘示的像素阵列部分包括两个相邻的干涉式调制器12a和12b。在左侧的干涉式调制器12a中,显示一可移动反射层14a处于一松弛位置,该松弛位置距一包含一局部反射层的光学堆叠16a一预定距离。在右侧的干涉式调制器12b中,显示一可移动反射层14b处于一靠近光学堆叠16b的受激活位置处。The pixel array portion depicted in FIG. 1 includes two adjacent interferometric modulators 12a and 12b. In the interferometric modulator 12a on the left, a movable reflective layer 14a is shown in a relaxed position a predetermined distance from an optical stack 16a including a partially reflective layer. In the interferometric modulator 12b on the right, a movable reflective layer 14b is shown at an activated position near the optical stack 16b.

本文中所提及的光学堆叠16a及16b(统称为光学堆叠16)通常由数个熔合的层构成,此可包括电极层(例如氧化铟锡(ITO))、局部反射层(例如铬)、及透明电介质。光学堆叠16因此为导电性、局部透明及局部反射性,并可例如通过将上述各层中的一个或多个层沉积至透明衬底20上来制成。在某些实施例中,所述层被图案化成平行条带,且可形成显示装置中的行电极,如将在下文中所进一步说明。可移动反射层14a、14b可形成为由沉积在支柱18顶部的一个或多个沉积金属层(与行电极16a、16b正交)及沉积在支柱18之间的中间牺牲材料构成的一系列平行条带。在牺牲材料被蚀刻掉后,可移动反射层14a、14b与光学堆叠16a、16b相隔一规定气隙19。反射层14可使用具有高度导电性及反射性的材料(例如铝),且这些条带可形成显示装置中的列电极。The optical stacks 16a and 16b referred to herein (collectively referred to as the optical stack 16) are generally composed of several fused layers, which may include electrode layers such as indium tin oxide (ITO), partially reflective layers such as chrome, and transparent dielectrics. Optical stack 16 is thus conductive, partially transparent, and partially reflective, and may be made, for example, by depositing one or more of the above-described layers onto transparent substrate 20 . In certain embodiments, the layers are patterned into parallel strips, and may form row electrodes in a display device, as will be described further below. The movable reflective layers 14a, 14b may be formed as a series of parallel layers consisting of one or more deposited metal layers deposited on top of the pillars 18 (orthogonal to the row electrodes 16a, 16b) and an intermediate sacrificial material deposited between the pillars 18. Bands. After the sacrificial material is etched away, the movable reflective layer 14a, 14b is separated from the optical stack 16a, 16b by a defined air gap 19 . A highly conductive and reflective material such as aluminum can be used for the reflective layer 14, and these strips can form column electrodes in a display device.

在不施加电压时,空腔19保持处于可移动反射层14a与光学堆叠16a之间,其中可移动反射层14a处于机械松弛状态,如图1中的像素12a所示。然而,在向一所选行和列施加电位差之后,在对应像素处的所述行和列电极相交处形成的电容器变成充电状态,且静电力将这些电极拉向一起。如果所述电压足够高,则可移动反射层14会变形并受迫压抵光学堆叠16。光学堆叠16内的介电层(在该图中未显示)可防止短路并控制层14与16之间的间隔距离,如图1中右边的像素12b所示。无论所施加的电位差极性如何,其行为均相同。由此可见,可控制反射与非反射像素状态的行/列激活与在传统的LCD及其他显示技术中所用的行/列激活在许多方面相似。When no voltage is applied, the cavity 19 remains between the movable reflective layer 14a and the optical stack 16a, wherein the movable reflective layer 14a is in a mechanically relaxed state, as shown by the pixel 12a in FIG. 1 . However, after a potential difference is applied to a selected row and column, the capacitor formed at the intersection of the row and column electrodes at the corresponding pixel becomes charged, and electrostatic forces pull these electrodes together. If the voltage is high enough, the movable reflective layer 14 is deformed and forced against the optical stack 16 . A dielectric layer (not shown in this figure) within optical stack 16 prevents shorting and controls the separation distance between layers 14 and 16, as shown in pixel 12b on the right in FIG. The behavior is the same regardless of the polarity of the applied potential difference. It can be seen that the row/column activation that controls the state of reflective and non-reflective pixels is similar in many respects to the row/column activation used in conventional LCD and other display technologies.

图2至图5B图解说明一个在显示应用中使用干涉调制器阵列的实例性过程及系统。2-5B illustrate one example process and system for using an array of interferometric modulators in a display application.

图2为一系统方块图,其图解说明一可体现本发明各方面的电子装置的一个实施例。在该实例性实施例中,该电子装置包括一处理器21,该处理器21可为任何通用单芯片或多芯片微处理器,例如ARM、

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或任何专用微处理器,例如数字信号处理器、微控制器或可编程门阵列。按照业内惯例,可将处理器21配置成执行一个或多个软件模块。除执行一操作系统外,还可将该处理器配置成执行一个或多个软件应用程序,包括网页浏览器、电话应用程序、电子邮件程序或任何其他软件应用程序。FIG. 2 is a system block diagram illustrating one embodiment of an electronic device that may embody aspects of the invention. In this exemplary embodiment, the electronic device includes a processor 21, which may be any general-purpose single-chip or multi-chip microprocessor, such as ARM,
Figure C200580031234D00101
Pentium
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Pentium
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Pentium
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Pro, 8051,
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power
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Or any special purpose microprocessor such as a digital signal processor, microcontroller or programmable gate array. Processor 21 may be configured to execute one or more software modules, as is customary in the industry. In addition to executing an operating system, the processor may also be configured to execute one or more software applications, including web browsers, telephony applications, email programs, or any other software application.

在一实施例中,处理器21还被配置成与一阵列驱动器22进行通信。在一实施例中,阵列驱动器22包括向一显示阵列或面板30提供信号的一行驱动电路24及一列驱动电路26。图1中所示的阵列剖面图在图2中以线1-1示出。对于MEMS干涉式调制器,所述行/列激活协议可利用图3所示的这些装置的滞后性质。其可能需要例如一10伏的电位差来使一可移动层自松弛状态变形至受激活状态。然而,当该电压自该值降低时,在该电压降低回至10伏以下时,该可移动层将保持其状态。在图3所示的实例性实施例中,在电压降低至2伏以下之前,可移动层不完全松弛。因此,在图3所示实例中,存在一大约为3至7伏的电压范围,在该电压范围内存在一所施加电压窗口,在该窗口内,该装置稳定在松弛或受激活状态。在本文中将其称为“滞后窗口”或“稳定窗口”。对于一具有图3所示滞后特性的显示阵列而言,行/列激活协定可设计成在行选通期间向所选通行中要被激活的像素施加一约10伏的电压差,并向要松弛的像素施加一接近0伏的电压差。在选通之后,向像素施加一约5伏的稳态电压差,以使其保持在行选通使其所处的任何状态。在此实例中,在被写入之后,每一像素均承受一处于3-7伏“稳定窗口”内的电位差。该特性使图1所示的像素设计在相同的所施加电压条件下稳定在一先前存在的受激活状态或松弛状态。由于干涉调制器的每一像素无论是处于受激活状态还是松弛状态,实质上均是一由该固定反射层及移动反射层所构成的电容器,因此,该稳定状态可被保持在该滞后窗口内的一电压下而几乎不消耗功率。如果所施加的电位固定,则实质上没有电流流入像素。In one embodiment, the processor 21 is also configured to communicate with an array driver 22 . In one embodiment, the array driver 22 includes a row driver circuit 24 and a column driver circuit 26 that provide signals to a display array or panel 30 . The cross-sectional view of the array shown in FIG. 1 is shown at line 1-1 in FIG. 2 . For MEMS interferometric modulators, the row/column activation protocol can take advantage of the hysteresis properties of these devices shown in FIG. 3 . It may require, for example, a 10 volt potential difference to deform a movable layer from a relaxed state to an activated state. However, when the voltage is lowered from this value, the movable layer will maintain its state when the voltage drops back below 10 volts. In the exemplary embodiment shown in Figure 3, the movable layer does not fully relax until the voltage drops below 2 volts. Thus, in the example shown in Figure 3, there is a voltage range of approximately 3 to 7 volts within which there is a window of applied voltage within which the device is stable in the relaxed or actuated state. This is referred to herein as the "hysteresis window" or "stability window". For a display array with the hysteresis characteristic shown in Figure 3, the row/column activation protocol can be designed to apply a voltage difference of about 10 volts to the pixels in the selected row to be activated during row gating, and Relaxed pixels have a voltage difference close to 0 volts applied. After gating, a steady state voltage difference of about 5 volts is applied to the pixel to keep it in whatever state the row was gated to be in. In this example, after being written to, each pixel sees a potential difference within a "stability window" of 3-7 volts. This characteristic makes the pixel design shown in FIG. 1 stable in a pre-existing actuated or relaxed state under the same applied voltage conditions. Since each pixel of the interferometric modulator, whether in the actuated or relaxed state, is essentially a capacitor formed by the fixed reflective layer and the moving reflective layer, the stable state can be maintained within the hysteresis window Under a certain voltage, it consumes almost no power. If the applied potential is fixed, substantially no current flows into the pixel.

在典型应用中,可通过根据第一行中所期望的一组受激活像素确定一组列电极而形成一显示帧。此后,将一行脉冲施加至第1行的电极,从而激活与所确定的列线对应的像素。此后,将所确定的一组列电极变成与第二行中所期望的一组受激活像素对应。此后,将一脉冲施加至第2行的电极,从而根据所确定的列电极来激活第2行中的相应像素。第1行的像素不受第2行的脉冲的影响,因而保持其在第1行的脉冲期间所设定到的状态。可按一循序方式对整个系列的行重复上述步骤,以形成该帧。通常,通过以某一所期望帧数/秒的速度连续重复该过程来用新显示数据刷新及/或更新这些帧。还有很多种用于驱动像素阵列的行及列电极以形成显示帧的协定为人们所熟知,且可与本发明一起使用。In a typical application, a display frame may be formed by defining a set of column electrodes according to the desired set of actuated pixels in the first row. Thereafter, a row pulse is applied to the electrodes of row 1, thereby activating the pixels corresponding to the determined column lines. Thereafter, the determined set of column electrodes is changed to correspond to the desired set of actuated pixels in the second row. Thereafter, a pulse is applied to the electrode of row 2, thereby activating the corresponding pixel in row 2 according to the determined column electrode. The pixels of row 1 are not affected by the pulse of row 2 and thus maintain the state they were set to during the pulse of row 1. The above steps can be repeated in a sequential fashion for the entire series of rows to form the frame. Typically, the frames are refreshed and/or updated with new display data by continuously repeating the process at some desired number of frames per second. There are also a wide variety of protocols for driving the row and column electrodes of an array of pixels to form a display frame that are well known and can be used with the present invention.

图4、5A及5B图解说明一种用于在图2所示的3x3阵列上形成一显示帧的可能的激活协议。图4显示一组可用于具有图3所示滞后曲线的像素的可能的行及列电压电平。在图4的实施例中,激活一像素包括将相应的列设定至-V偏压,并将相应的行设定至+ΔV,其可分别对应于-5伏及+5伏。使像素松弛则是通过将相应的列设定至+V 并将相应的行设定至相同的+ΔV以在该像素两端形成一0伏的电位差来实现。在那些行电压保持为0伏的行中,无论列是处于+V偏压还是-V偏压,像素均稳定于其最初所处的任何状态。如也在图4中所显示,应了解,也可使用与上面所述电压具有相反极性的电压,例如,激活一像素可涉及到将相应的列设定至+V偏压并将相应的行设定至-ΔV。在该实施例中,释放像素是通过将相应的列设定至-V偏压并将相应的行设定至相同的-ΔV、从而在像素两端形成一0伏的电位差来实现。如也在图4中所显示,应了解,也可使用与上面所述电压具有相反极性的电压,例如,激活一像素可涉及到将相应的列设定至+V偏压并将相应的行设定至-ΔV。在该实施例中,释放像素是通过将相应的列设定至-V偏压并将相应的行设定至相同的-ΔV、从而在像素两端形成一0伏的电位差来实现。4, 5A and 5B illustrate one possible activation protocol for forming a display frame on the 3x3 array shown in FIG. FIG. 4 shows a set of possible row and column voltage levels that may be used for a pixel having the hysteresis curve shown in FIG. 3 . In the embodiment of FIG. 4, activating a pixel includes setting the corresponding column to -V bias and setting the corresponding row to +ΔV, which may correspond to -5 volts and +5 volts, respectively. Relaxing the pixel is accomplished by setting the corresponding column to +V bias and the corresponding row to the same +ΔV to create a 0 volt potential difference across the pixel. In those rows where the row voltage remains at 0 volts, the pixel is stable in whatever state it was originally in, regardless of whether the column is biased at +V or -V . As also shown in FIG. 4, it should be appreciated that voltages of opposite polarity to those described above may also be used, for example, activating a pixel may involve setting the corresponding column to +V bias and setting the corresponding set to -ΔV. In this embodiment, releasing the pixel is accomplished by setting the corresponding column to a -V bias and the corresponding row to the same -ΔV, creating a potential difference of 0 volts across the pixel. As also shown in FIG. 4, it should be appreciated that voltages of opposite polarity to those described above may also be used, for example, activating a pixel may involve setting the corresponding column to +V bias and setting the corresponding set to -ΔV. In this embodiment, releasing the pixel is accomplished by setting the corresponding column to a -V bias and the corresponding row to the same -ΔV, creating a potential difference of 0 volts across the pixel.

图5B为一显示一系列行及列信号的时序图,这些信号施加至图2所示的3x3阵列,其将形成图5A所示的显示布置,其中受激活像素为非反射性的。在写入图5A所示的帧之前,像素可处于任何状态,且在该实例中,所有行均处于0伏,且所有列均处于+5伏。在这些所施加的电压下,所有像素均稳定于其现有的受激活状态或松弛状态。Fig. 5B is a timing diagram showing a series of row and column signals applied to the 3x3 array shown in Fig. 2, which will result in the display arrangement shown in Fig. 5A, wherein the actuated pixels are non-reflective. Prior to writing the frame shown in Figure 5A, the pixels can be in any state, and in this example, all rows are at 0 volts and all columns are at +5 volts. At these applied voltages, all pixels are stable in their existing actuated or relaxed states.

在图5A所示的帧中,像素(1,1)、(1,2)、(2,2)、(3,2)及(3,3)受到激活。为实现这一效果,在第1行的一“线时间”期间,将第1列及第2列设定为-5伏,并将第3列设定为+5伏。此不会改变任何像素的状态,因为所有像素均保持处于3-7伏的稳定窗口内。此后,通过一自0伏上升至5伏然后又下降回到0伏的脉冲来选通第1行。由此激活像素(1,1)和(1,2)并使像素(1,3)松弛。阵列中的其他像素均不受影响。为将第2行设定为所期望状态,将第2列设定为-5伏,并将第1列及第3列设定为+5伏。此后,施加至第2行的相同的选通脉冲将激活像素(2,2)并使像素(2,1)和(2,3)松弛。同样,阵列中的其他像素均不受影响。类似地,通过将第2列和第3列设定为-5伏、并将第1列设定为+5伏来设定第3行。第3行选通脉冲将第3行像素设定为图5A所示的状态。在写入帧之后,行电位为0,而列电位可保持在+5或-5伏,且此后显示将稳定于图5A所示的布置。应了解,可对由数十或数百个行和列构成的阵列使用相同的程序。还应了解,用于执行行及列激活的电压的定时、顺序、及电平可在上面所概述的大体原理内变化很大,且上述实例只是实例性的,并可将任一种激活电压方法与本文所述的系统及方法一起使用。In the frame shown in FIG. 5A, pixels (1,1), (1,2), (2,2), (3,2) and (3,3) are activated. To achieve this, set columns 1 and 2 to -5 volts and column 3 to +5 volts during a "line time" in row 1. This does not change the state of any pixels, as all pixels remain within the 3-7 volt stability window. Thereafter, row 1 is strobed with a pulse that rises from 0 volts to 5 volts and then falls back to 0 volts. Pixels (1,1) and (1,2) are thereby activated and pixel (1,3) is relaxed. No other pixels in the array are affected. To set row 2 to the desired state, set column 2 to -5 volts, and set columns 1 and 3 to +5 volts. Thereafter, the same strobe applied to row 2 will activate pixel (2,2) and relax pixels (2,1) and (2,3). Likewise, no other pixels in the array are affected. Similarly, set row 3 by setting columns 2 and 3 to -5 volts, and setting column 1 to +5 volts. The row 3 strobe pulse sets the row 3 pixels to the state shown in Figure 5A. After writing a frame, the row potentials are 0, while the column potentials can remain at +5 or -5 volts, and thereafter the display will stabilize in the arrangement shown in Figure 5A. It should be appreciated that the same procedure can be used with arrays of tens or hundreds of rows and columns. It should also be understood that the timing, sequence, and levels of voltages used to perform row and column activation can vary widely within the general principles outlined above, and that the above examples are exemplary only, and that either activation voltage Methods are used with the systems and methods described herein.

图6A及6B为图解说明一显示装置40的一实施例的系统方块图。显示装置40例如可为蜂窝式电话或移动电话。然而,显示装置40的相同组件及其稍作变化的形式也可作为例如电视及便携式媒体播放器等各种类型显示装置的例证。6A and 6B are system block diagrams illustrating one embodiment of a display device 40 . Display device 40 may be, for example, a cellular or mobile telephone. However, the same components of display device 40 and slight variations thereof are also illustrative of various types of display devices, such as televisions and portable media players.

显示装置40包括一外壳41、一显示器30、一天线43、一扬声器44、一输入装置48、及一麦克风46。外壳41通常由所属领域的技术人员所熟知的许多种制造工艺中的任何一种制成,包括注射成型及真空成形。另外,外壳41可由许多种材料中的任何一种制成,包括但不限于塑料、金属、玻璃、橡胶及陶瓷,或其一组合。在一实施例中,外壳41包括可拆卸部分(未示出),其可与其他具有不同颜色或包含不同标志、图片或符号的可拆卸部分互换。The display device 40 includes a housing 41 , a display 30 , an antenna 43 , a speaker 44 , an input device 48 , and a microphone 46 . Housing 41 is typically made by any of a number of manufacturing processes well known to those skilled in the art, including injection molding and vacuum forming. Additionally, housing 41 may be made from any of a number of materials including, but not limited to, plastic, metal, glass, rubber, and ceramic, or a combination thereof. In one embodiment, the housing 41 includes a detachable portion (not shown) that is interchangeable with other detachable portions of a different color or containing different logos, pictures or symbols.

实例性显示装置40的显示器30可为众多种显示器中的任一种,包括本文所述的双稳显示器。在其他实施例中,如所属领域的技术人员众所周知,显示器30包括一平板显示器,例如上文所述的等离子体显示器、EL、OLED、STN LCD或TFT LCD,或一非平板显示器,例如CRT或其他显像管装置。然而,为便于说明本实施例,如本文中所述,显示器30包括一干涉式调制器显示器。Display 30 of example display device 40 may be any of a wide variety of displays, including the bi-stable displays described herein. In other embodiments, display 30 comprises a flat panel display, such as the plasma display, EL, OLED, STN LCD or TFT LCD described above, or a non-flat panel display, such as a CRT or TFT LCD, as is well known to those skilled in the art. Other picture tube devices. However, for ease of illustration of the present embodiment, display 30 comprises an interferometric modulator display as described herein.

在图6B中示意性地图解说明实例性显示装置40的一实施例的组件。所示实例性显示装置40包括一外壳41,并可包括其他至少部分地封闭于其中的组件。例如,在一实施例中,实例性显示装置40包括一网络接口27,网络接口27包括一耦接至一收发器47的天线43。收发器47连接至处理器21,处理器21又连接至调节硬件52。调节硬件52可经配置以对一信号进行调节(例如对一信号进行滤波)。调节软件52连接至一扬声器45及一麦克风46。处理器21还连接至一输入装置48及一驱动控制器29。驱动控制器29耦接至一帧缓冲器28并耦接至阵列驱动器22,阵列驱动器22又耦接至一显示阵列30。一电源50根据具体实例性显示装置40的设计所要求为所有组件供电。Components of an embodiment of an example display device 40 are schematically illustrated in FIG. 6B. The illustrated example display device 40 includes a housing 41 and may include other components at least partially enclosed therein. For example, in one embodiment, the exemplary display device 40 includes a network interface 27 including an antenna 43 coupled to a transceiver 47 . Transceiver 47 is connected to processor 21 , which in turn is connected to conditioning hardware 52 . Conditioning hardware 52 may be configured to condition a signal (eg, filter a signal). The adjustment software 52 is connected to a speaker 45 and a microphone 46 . The processor 21 is also connected to an input device 48 and a drive controller 29 . The driver controller 29 is coupled to a frame buffer 28 and to the array driver 22 , and the array driver 22 is further coupled to a display array 30 . A power supply 50 provides power to all components as required by the design of the particular exemplary display device 40 .

网络接口27包括天线43及收发器47,以使实例性显示装置40可通过网络与一个或多个装置进行通信。在一实施例中,网络接口27还可具有某些处理功能,以降低对处理器21的要求。天线43是为所属领域的技术人员所知的任一种用于发射和接收信号的天线。在一实施例中,该天线根据IEEE 802.11标准(包括IEEE 802.11(a),(b),或(g))来发射及接收RF信号。在另一实施例中,该天线根据蓝牙(BLUETOOTH)标准来发射及接收RF信号。倘若为蜂窝式电话,则该天线被设计成接收CDMA、GSM、AMPS或其他用于在无线移动电话网络中进行通信的习知信号。收发器47对自天线43接收的信号进行预处理,以使其可由处理器21接收及进一步处理。收发器47还处理自处理器21接收到的信号,以使其可通过天线43自实例性显示装置40发射。The network interface 27 includes an antenna 43 and a transceiver 47 to enable the example display device 40 to communicate with one or more devices over a network. In an embodiment, the network interface 27 may also have some processing functions to reduce the requirements on the processor 21 . The antenna 43 is any antenna known to those skilled in the art for transmitting and receiving signals. In one embodiment, the antenna transmits and receives RF signals according to IEEE 802.11 standards, including IEEE 802.11(a), (b), or (g). In another embodiment, the antenna transmits and receives RF signals according to the BLUETOOTH standard. In the case of a cellular telephone, the antenna is designed to receive CDMA, GSM, AMPS or other known signals for communicating in wireless mobile telephone networks. The transceiver 47 pre-processes the signal received from the antenna 43 so that it can be received and further processed by the processor 21 . Transceiver 47 also processes signals received from processor 21 so that they may be transmitted from exemplary display device 40 via antenna 43 .

在一替代实施例中,可使用一接收器取代收发器47。在再一替代实施例中,网络接口27可由一可存储或产生要发送至处理器21的图像数据的图像源替代。例如,该图像源可为数字视盘(DVD)或一含有图像数据的硬盘驱动器、或一产生图像数据的软件模块。In an alternative embodiment, a receiver may be used instead of transceiver 47 . In yet another alternative embodiment, network interface 27 may be replaced by an image source that may store or generate image data to be sent to processor 21 . For example, the image source may be a digital video disc (DVD) or a hard drive containing image data, or a software module that generates image data.

处理器21通常控制实例性显示装置40的整体运行。处理器21自网络接口27或一图像源接收数据,例如经压缩的图像数据,并将该数据处理成原始图像数据或一种易于处理成原始图像数据的格式。然后,处理器21将处理后的数据发送至驱动控制器29或发送至帧缓冲器28进行存储。原始数据通常是指标识一图像内每一位置处的图像特征的信息。例如,这些图像特征可包括颜色、饱和度及灰度级。Processor 21 generally controls the overall operation of exemplary display device 40 . Processor 21 receives data, such as compressed image data, from network interface 27 or an image source, and processes the data into raw image data or a format that is easily processed into raw image data. Then, the processor 21 sends the processed data to the drive controller 29 or to the frame buffer 28 for storage. Raw data generally refers to information that identifies image features at each location within an image. For example, these image characteristics may include color, saturation, and grayscale.

在一实施例中,处理器21包括一微控制器、CPU、或用于控制实例性显示装置40的运行的逻辑单元。调节硬件52通常包括用于向扬声器45发射信号及从麦克风46接收信号的放大器及滤波器。调节硬件52可为实例性显示装置40内的离散组件,或者可并入处理器21或其他组件内。In one embodiment, the processor 21 includes a microcontroller, CPU, or logic unit for controlling the operation of the exemplary display device 40 . Conditioning hardware 52 typically includes amplifiers and filters for transmitting signals to speaker 45 and receiving signals from microphone 46 . Conditioning hardware 52 may be a discrete component within example display device 40, or may be incorporated within processor 21 or other components.

驱动控制器29直接自处理器21或自帧缓冲器28获取由处理器21产生的原始图像数据,并适当地将原始图像数据重新格式化以便高速传输至阵列驱动器22。具体而言,驱动控制器29将原始图像数据重新格式化成一具有光栅状格式的数据流,以使其具有一适合于扫描显示阵列30的时间次序。然后,驱动控制器29将格式化后的信息发送至阵列驱动器22。尽管一驱动控制器29(例如一LCD控制器)常常作为一独立的集成电路(IC)与系统处理器21相关联,但这些控制器可按许多种方式进行构建。其可作为硬件嵌入于处理器21中、作为软件嵌入于处理器21中、或以硬件形式与阵列驱动器22完全集成。The drive controller 29 obtains the raw image data generated by the processor 21 directly from the processor 21 or from the frame buffer 28 and properly reformats the raw image data for high-speed transmission to the array driver 22 . Specifically, drive controller 29 reformats the raw image data into a data stream having a raster-like format such that it has a temporal order suitable for scanning display array 30 . Then, the drive controller 29 sends the formatted information to the array driver 22 . Although a driver controller 29 (such as an LCD controller) is often associated with the system processor 21 as a separate integrated circuit (IC), these controllers can be implemented in many ways. It may be embedded in the processor 21 as hardware, embedded in the processor 21 as software, or fully integrated with the array driver 22 in hardware.

通常,阵列驱动器22自驱动控制器29接收格式化后的信息并将视频数据重新格式化成一组平行的波形,该组平行的波形每秒许多次地施加至来自显示器的x-y像素矩阵的数百条且有时数千条引线。Typically, array driver 22 receives formatted information from driver controller 29 and reformats the video data into a set of parallel waveforms that are applied to hundreds of pixels from the x-y pixel matrix of the display many times per second. and sometimes thousands of leads.

在一实施例中,驱动控制器29、阵列驱动器22、及显示阵列30适用于本文所述任一类型的显示器。例如,在一实施例中,驱动控制器29是一传统的显示控制器或一双稳显示控制器(例如一干涉式调制器控制器)。在另一实施例中,阵列驱动器22为一传统驱动器或一双稳显示驱动器(例如一干涉式调制器显示器)。在一实施例中,一驱动控制器29与阵列驱动器22集成在一起。这种实施例在例如蜂窝式电话、手表及其它小面积显示器等高度集成的系统中很常见。在又一实施例中,显示阵列30是一典型的显示阵列或一双稳显示阵列(例如一包含一干涉式调制器阵列的显示器)。In one embodiment, driver controller 29, array driver 22, and display array 30 are suitable for any type of display described herein. For example, in one embodiment, drive controller 29 is a conventional display controller or a bi-stable display controller (eg, an interferometric modulator controller). In another embodiment, the array driver 22 is a conventional driver or a bi-stable display driver (eg, an interferometric modulator display). In one embodiment, a driver controller 29 is integrated with the array driver 22 . Such embodiments are common in highly integrated systems such as cellular phones, watches, and other small area displays. In yet another embodiment, the display array 30 is a typical display array or a bi-stable display array (eg, a display including an array of interferometric modulators).

输入装置48使用户能够控制实例性显示装置40的运行。在一实施例中,输入装置48包括一小键盘(例如一QWERTY键盘或一电话小键盘)、一按钮、一开关、一触敏屏幕、一压敏或热敏薄膜。在一实施例中,麦克风46是实例性显示装置40的输入装置。当使用麦克风46向该装置输入数据时,可由用户提供语音命令来控制实例性显示装置40的运行。Input device 48 enables a user to control the operation of example display device 40 . In one embodiment, the input device 48 includes a keypad (such as a QWERTY keyboard or a telephone keypad), a button, a switch, a touch sensitive screen, a pressure sensitive or heat sensitive film. In one embodiment, the microphone 46 is an input device for the exemplary display device 40 . Voice commands may be provided by the user to control the operation of the exemplary display device 40 when data is entered into the device using the microphone 46 .

电源50可包括众多种能量存储装置,此在所属领域中众所周知。例如,在一实施例中,电源50为一可再充电式电池,例如一镍-镉电池或锂离子电池。在另一实施例中,电源50为一可再生能源、电容器或太阳能电池,包括一塑料太阳能电池及太阳能电池涂料。在另一实施例中,电源50经配置以从墙上的插座接收电力。Power supply 50 may include a wide variety of energy storage devices, as are well known in the art. For example, in one embodiment, the power source 50 is a rechargeable battery, such as a nickel-cadmium battery or a lithium-ion battery. In another embodiment, the power source 50 is a renewable energy source, capacitor or solar cell, including a plastic solar cell and solar cell paint. In another embodiment, the power supply 50 is configured to receive power from a wall outlet.

在某些实施方案中,如上所述,控制可编程性驻存于一可位于电子显示系统中数个位置内的驱动控制器中。在某些情形中,控制可编程性驻存于阵列驱动器22中。所属领域的技术人员将知,可在任意数量的硬件及/或软件组件中及在不同的配置中实施上述优化。In certain implementations, as described above, control programmability resides in a drive controller that may be located in several places in the electronic display system. In some cases, control programmability resides in array driver 22 . Those skilled in the art will appreciate that the above-described optimizations may be implemented in any number of hardware and/or software components and in different configurations.

按照上述原理运行的干涉式调制器的详细结构可千变万化。例如,图7A-7E图解说明可移动反射层14及其支撑结构的五个不同的实施例。图7A为图1所示实施例的剖面图,其中在正交延伸的支撑件18上沉积一金属材料条带14。在图7B中,可移动反射层14仅在隅角处在系链32上附接至支撑件。在图7C中,可移动反射层14悬挂于一可变形层34上,可变形层34可包含一种柔性金属。可变形层34直接或间接地在可变形层34的周边周围连接至衬底20上。这些连接在本文中称作支撑柱。图7D中所示的实施例具有支撑柱栓塞42,可变形层34即位于支撑柱栓塞42上。如在图7A-7C中所示,可移动反射层14保持悬置于空腔上面,但可变形层34并未通过填充可变形层34与光学堆叠16之间的孔来形成支撑柱。而是,由用于形成支撑柱栓塞42的平坦化材料形成所述支撑柱。图7E中所示的实施例是基于图7D中所示的实施例,但也可经修改以与图7A-7C中所示的任一实施例以及未显示的其他实施例一起使用。在图7E中所示的实施例中,已使用额外的一层金属或其他导电材料来形成一总线结构44。此使信号能够沿干涉式调制器的背面路由,从而消除了原本可能须形成于衬底20上的若干电极。The detailed structure of an interferometric modulator operating according to the principles described above can vary widely. For example, Figures 7A-7E illustrate five different embodiments of the movable reflective layer 14 and its supporting structures. FIG. 7A is a cross-sectional view of the embodiment shown in FIG. 1 , wherein a strip 14 of metallic material is deposited on orthogonally extending supports 18 . In FIG. 7B the movable reflective layer 14 is attached to the support on tethers 32 only at the corners. In FIG. 7C, the movable reflective layer 14 is suspended from a deformable layer 34, which may comprise a flexible metal. The deformable layer 34 is directly or indirectly attached to the substrate 20 around the perimeter of the deformable layer 34 . These connections are referred to herein as support columns. The embodiment shown in FIG. 7D has a support post plug 42 on which the deformable layer 34 is located. As shown in FIGS. 7A-7C , the movable reflective layer 14 remains suspended above the cavity, but the deformable layer 34 does not form support posts by filling the holes between the deformable layer 34 and the optical stack 16 . Instead, the support posts are formed from the planarized material used to form the support post plugs 42 . The embodiment shown in Figure 7E is based on the embodiment shown in Figure 7D, but may also be modified for use with any of the embodiments shown in Figures 7A-7C, as well as other embodiments not shown. In the embodiment shown in FIG. 7E , an additional layer of metal or other conductive material has been used to form a bus structure 44 . This enables signals to be routed along the backside of the interferometric modulator, eliminating several electrodes that would otherwise have to be formed on the substrate 20 .

在例如在图7所示的那些实施例中,干涉式调制器用作直视式装置,其中自透明衬底20的前侧(与上面布置有调制器的侧相对的侧)观看图像。在这些实施例中,反射层14在光学上屏蔽干涉式调制器的位于与衬底20相对的反射层侧上的部分,包括可变形层34。这使得能够配置及操作被屏蔽区域,而不会不利地影响图像品质。此种屏蔽允许存在图7E中的总线结构44,此会提供使调制器的光学特性与调制器的机电特性分离的能力,例如寻址及因寻址而引起的移动。此种可分离的调制器架构使对调制器的机电方面所用的与对调制器的光学方面所用的结构设计及材料能够相互独立地加以选择及发挥作用。而且,图7C-7E中所示的实施例具有因将反射层14的光学特性自其机械特性解耦合(此由可变形层34来实施)而得到的额外优点。此使反射层14的结构设计及所用材料可在光学特性方面得到优化,且可变形层34的结构设计和所用材料可在所期望机械特性方面得到优化。In embodiments such as those shown in Figure 7, the interferometric modulators are used as a direct-view device, where the image is viewed from the front side of the transparent substrate 20 (the side opposite the side on which the modulators are disposed). In these embodiments, reflective layer 14 optically shields portions of the interferometric modulator on the reflective layer side opposite substrate 20 , including deformable layer 34 . This enables configuration and manipulation of masked areas without adversely affecting image quality. Such shielding allows for the bus structure 44 in Figure 7E, which would provide the ability to separate the optical properties of the modulator from the electromechanical properties of the modulator, such as addressing and the movement caused by addressing. Such a separable modulator architecture enables the structural design and materials used for the electromechanical aspects of the modulator and for the optical aspects of the modulator to be selected and function independently of each other. Moreover, the embodiment shown in FIGS. 7C-7E has the additional advantage of decoupling the optical properties of the reflective layer 14 from its mechanical properties, which is implemented by the deformable layer 34 . This allows the structural design and used materials of the reflective layer 14 to be optimized in terms of optical properties, and the structural design and used materials of the deformable layer 34 to be optimized in terms of desired mechanical properties.

如上文所讨论,干涉式调制器经配置以反射穿过透明衬底的光,并包含移动部件,例如可移动镜面14a、14b。因此,为使这些移动部件能够移动,较佳形成一气隙或空腔,以使干涉式调制器的机械部件(例如可移动镜面14a,14b)能够移动。As discussed above, the interferometric modulator is configured to reflect light passing through the transparent substrate and includes moving parts such as movable mirrors 14a, 14b. Therefore, to enable movement of these moving parts, an air gap or cavity is preferably formed to allow movement of the mechanical parts of the interferometric modulator, such as the movable mirrors 14a, 14b.

图8A-8C是根据一实施例形成于一经预先图案化的衬底上的干涉式调制器的剖面图。已发现,当使用一经预先图案化的衬底时,在制造具有上文所述功能的干涉式调制器中所涉及的步骤可适应于非常成本有效的制造技术。图8A-8C图解说明此种方法的一实施例,其会形成一种从与上文参照图1-7E所述干涉式调制器相对的侧上观看的干涉式调制器。视所述装置的最终应用而定,有时制成一透过衬底观看的显示器将较佳,且有时制成一透过干涉式调制器的沉积层观看的显示器将较佳。因此,对于此种设计而言,不需要使用一要在上面形成所述干涉式调制器的透明衬底(例如在图7A-7E中所示的透明衬底20)。所述经预先图案化的衬底因此既可不透明也可透明。在图8A-8C中所示的所例示实施例中,经预先图案化的衬底较佳不透明,此使得能够选择有助于压花的材料。8A-8C are cross-sectional views of interferometric modulators formed on a pre-patterned substrate according to one embodiment. It has been found that when using a pre-patterned substrate, the steps involved in fabricating an interferometric modulator with the functions described above can be adapted to a very cost-effective fabrication technique. Figures 8A-8C illustrate one embodiment of such a method, which would result in an interferometric modulator viewed from the side opposite to the interferometric modulator described above with reference to Figures 1-7E. Depending on the end application of the device, it may sometimes be advantageous to make a display viewed through the substrate, and sometimes it may be preferable to make a display viewed through the deposited layers of the interferometric modulator. Thus, for this design, there is no need to use a transparent substrate (such as transparent substrate 20 shown in FIGS. 7A-7E ) on which the interferometric modulators are formed. The pre-patterned substrate can thus be both opaque and transparent. In the illustrated embodiment shown in Figures 8A-8C, the pre-patterned substrate is preferably opaque, which enables selection of materials that facilitate embossing.

根据在图8A-8C中所示的实施例,将一干涉式调制器形成于一经预先图案化的衬底505上。较佳将一其中形成有沟槽507的衬底505覆盖以一镜层,以形成一下部电极(一半反射性或反射性构件)502,其将用作上文所述的固定层。According to the embodiment shown in FIGS. 8A-8C , an interferometric modulator is formed on a pre-patterned substrate 505 . A substrate 505 in which trenches 507 are formed is preferably covered with a mirror layer to form a lower electrode (semi-reflective or reflective member) 502, which will serve as the pinned layer as described above.

衬底505可自一较佳不透明的聚合物材料形成,该较佳不透明的聚合物材料具有一系列沿衬底表面在一个方向上伸展的压印、且适当相间的凹槽或沟槽507。这些凹槽507可采用各种各样的传统材料、使用已知技术压印成较佳具有一带锥形侧面的凹角轮廓,如在图8A-8C中所示。在一较佳实施例中,一由复合材料形成的衬底505压印、冲压、烧蚀、模制、或以机械方式印有沟槽或凹槽,并随后经过烘焙而获得所述凹角轮廓。所属领域的技术人员将了解,此种复合材料较佳由位于不同层中的不同材料形成且在冲压或压印所述衬底之后,烘焙会在这些不同的层中造成不同的热膨胀。在所示实施例中,顶层具有一较高的热膨胀系数,从而导致膨胀至凹槽507内。尽管较佳为凹角轮廓,然而所属领域的技术人员将了解,凹槽507也可具有其他形状(例如垂直的壁),只要如在下文中所更详细说明这些凹槽在沉积于衬底505顶面上的材料中形成一断点即可。应了解,也可通过不同于压印的技术(例如,举例而言,蚀刻)来形成于衬底505中。然而,较佳使用压印或冲压,因为其为一种廉价的工艺。Substrate 505 may be formed from a preferably opaque polymeric material having a series of embossed, suitably spaced grooves or grooves 507 extending in one direction along the surface of the substrate. These grooves 507 can be embossed using known techniques using a variety of conventional materials, preferably having a reentrant profile with tapered sides, as shown in Figures 8A-8C. In a preferred embodiment, a substrate 505 formed of composite material is embossed, stamped, ablated, molded, or mechanically imprinted with grooves or grooves, and then baked to obtain the reentrant profile . Those skilled in the art will appreciate that such a composite material is preferably formed from different materials in different layers and that after stamping or embossing the substrate, baking will cause different thermal expansions in these different layers. In the illustrated embodiment, the top layer has a higher coefficient of thermal expansion, causing expansion into the groove 507 . Although a reentrant profile is preferred, those skilled in the art will appreciate that the grooves 507 may have other shapes (e.g., vertical walls) as long as these grooves are deposited on the top surface of the substrate 505 as described in more detail below. It is sufficient to form a breakpoint in the above material. It should be appreciated that formation in the substrate 505 may also be by techniques other than imprinting, such as etching, for example. However, embossing or stamping is preferred as it is an inexpensive process.

当在此种表面结构上沉积材料时,某些材料将沉积并沉淀至凹槽507内,而某些材料将沉积并沉淀至衬底505顶面上、各凹槽507之间。所述材料较佳通过传统沉积技术来沉积,例如通过某种形式的溅镀、物理气体沉积及化学气体沉积(CVD)。如在图8A-8C中所示,凹槽507的存在会在衬底505顶面上的沉积层中形成断点或间断点。通过此种方式,在不使用传统光刻法及蚀刻步骤的情况下沉积干涉式调制器的下部层502、508、510。在该实施例中,实际上,将形成图7A-7E所示结构的第一组掩模并入衬底505自身中,且事实上可由用于初始电极图案的经济的压印工艺来取代传统的遮掩。据该实施例,干涉式调制器结构制作的前几个步骤因此为沉积下部电极501、一介电材料508、及一层牺牲材料510。所沉积下部电极502、介电材料508及牺牲材料510的层因此以成行或条带的形式形成于衬底505的顶面上。所述条带结构是因所压印凹槽507的存在而自然地制成。When depositing material on such a surface structure, some material will deposit and precipitate into the grooves 507 and some material will deposit and precipitate on the top surface of the substrate 505 between the grooves 507 . The material is preferably deposited by conventional deposition techniques, such as by some form of sputtering, physical vapor deposition and chemical vapor deposition (CVD). As shown in FIGS. 8A-8C , the presence of grooves 507 creates discontinuities or discontinuities in the deposited layer on the top surface of substrate 505 . In this way, the lower layers 502, 508, 510 of the interferometric modulators are deposited without using conventional photolithography and etching steps. In this embodiment, in effect, the first set of masks forming the structures shown in FIGS. 7A-7E are incorporated into the substrate 505 itself, and in fact can be replaced by an economical imprint process for the initial electrode pattern. cover up. According to this embodiment, the first steps in the fabrication of the interferometric modulator structure are thus the deposition of the lower electrode 501 , a dielectric material 508 , and a layer of sacrificial material 510 . The deposited layers of lower electrode 502 , dielectric material 508 and sacrificial material 510 are thus formed in rows or strips on the top surface of substrate 505 . The stripe structure is naturally produced due to the presence of the embossed grooves 507 .

下部电极502较佳由铝形成。在其他实施例中,下部电极502可包含其他高度反射性金属,例如(举例而言)银(Ag)或金(Au)。或者,下部电极502可为一经配置以配置提供恰当光学性质及机械性质的金属堆叠。The lower electrode 502 is preferably formed of aluminum. In other embodiments, the lower electrode 502 may comprise other highly reflective metals such as, for example, silver (Ag) or gold (Au). Alternatively, the lower electrode 502 may be a metal stack configured to provide appropriate optical and mechanical properties.

较佳在下部电极502上沉积一介电层508。在一较佳实施例中,所述介电材料为二氧化硅(SiO2)。较佳在所述结构上面沉积(并在此后移除)一牺牲层510,以在下部电极502与一上部电极或反射构件506之间形成一光学谐振腔,所述上部电极或反射构件506将沉积于牺牲层510上面以形成可移动层,如在图8B中所示。在所示实施例中,牺牲层510包含硅(Si)。在其他实施例中,该牺牲层510可由钼(Mo)、钨(W)或钛(Ti)形成。可相对于外露的介电材料及电极材料来选择性地蚀刻所有这些牺牲材料,但所属领域的技术人员将易知,也可将其他牺牲材料(例如光阻剂)与其他选择性蚀刻化学品一起使用。A dielectric layer 508 is preferably deposited on the lower electrode 502 . In a preferred embodiment, the dielectric material is silicon dioxide (SiO 2 ). A sacrificial layer 510 is preferably deposited (and thereafter removed) over the structure to form an optical resonant cavity between the lower electrode 502 and an upper electrode or reflective member 506 that will Deposited over sacrificial layer 510 to form a movable layer, as shown in FIG. 8B. In the illustrated embodiment, the sacrificial layer 510 includes silicon (Si). In other embodiments, the sacrificial layer 510 may be formed of molybdenum (Mo), tungsten (W) or titanium (Ti). All of these sacrificial materials can be etched selectively with respect to exposed dielectric and electrode materials, but those skilled in the art will readily appreciate that other sacrificial materials (such as photoresist) can also be combined with other selective etch chemistries. use together.

如在图8B中所示,在该实施例中,通过填充沟槽507及先前所沉积结构之间的区域来继续进行干涉式调制器结构的制造。此种填充可通过许多传统的沉积/图案化/蚀刻步骤或通过一回蚀工艺来实施,例如(举例而言),通过化学机械抛光(CMP)平坦化步骤来实施。As shown in FIG. 8B, in this embodiment, fabrication of the interferometric modulator structure continues by filling the area between the trench 507 and the previously deposited structure. Such filling can be performed by a number of conventional deposition/patterning/etch steps or by an etch-back process such as, for example, a chemical mechanical polishing (CMP) planarization step.

较佳在牺牲层510上面沉积正交的上部电极条带506,随后沉积通过支柱522隔开的由一第二或上部牺牲材料520形成的条带。该上部电极506沉积成与下部电极502正交的成行的条带,以形成上文所述的行/列阵列。上部电极506及牺牲材料520可较佳使用一种荫罩沉积技术以其所需图案形式沉积成条带。支柱522由绝缘材料(较佳为聚合物或介电材料)形成。Orthogonal upper electrode strips 506 are preferably deposited over the sacrificial layer 510, followed by deposition of strips of a second or upper sacrificial material 520 separated by pillars 522. The upper electrodes 506 are deposited as strips in rows orthogonal to the lower electrodes 502 to form the row/column array described above. The upper electrode 506 and the sacrificial material 520 may preferably be deposited in strips in their desired pattern using a shadow mask deposition technique. The post 522 is formed of an insulating material, preferably a polymer or a dielectric material.

然后,较佳在上部牺牲层520上面沉积薄(较佳为50-100埃)的半反射性层530。在较佳实施例中,半反射性层530为铬。如在图8B中所示,在半反射性层530上沉积透明材料或观看构件535,以为半反射性层530提供额外的机械及结构整体性—在移除牺牲层510、520之后,半反射性层530通常太薄而无法支撑其自身。所属领域的技术人员将了解,透明衬底535承担机械功能且充当通过其进行显示及通过其透射光的构件。透明衬底535可由例如氧化物等固体无机材料形成。在另一实施例中,透明衬底535可由透明聚合物形成。半反射性层530及透明衬底较佳通过例如溅镀、PVD及CVD等传统沉积技术沉积而成。A thin (preferably 50-100 Angstroms) semi-reflective layer 530 is then deposited on top of the upper sacrificial layer 520, preferably. In a preferred embodiment, the semi-reflective layer 530 is chromium. As shown in FIG. 8B, a transparent material or viewing feature 535 is deposited over the semi-reflective layer 530 to provide additional mechanical and structural integrity to the semi-reflective layer 530—after removal of the sacrificial layers 510, 520, the semi-reflective Reactive layer 530 is typically too thin to support itself. Those skilled in the art will appreciate that the transparent substrate 535 assumes mechanical functions and acts as a means through which a display is made and light is transmitted through. The transparent substrate 535 may be formed of a solid inorganic material such as oxide. In another embodiment, the transparent substrate 535 may be formed of a transparent polymer. The semi-reflective layer 530 and transparent substrate are preferably deposited by conventional deposition techniques such as sputtering, PVD, and CVD.

透明材料535及半反射性层530较佳蚀刻有开孔或孔(未显示),以使用于移除牺牲层的蚀刻气体可到达层510及520的牺牲材料。另一选择为,透明材料535可预先图案化有预先蚀刻或压印的开孔或孔。应了解,作为总体封装工艺的一部分,对干涉式调制器加以密封并保护其免受容纳干涉式调制器的封装周围环境的影响。较佳地,这些孔或开孔具有小至光刻系统将允许的直径,且更佳约为2.4微米。所属领域的技术人员将了解,开孔的大小、间距及数量将影响牺牲层510、520的移除速率。Transparent material 535 and semi-reflective layer 530 are preferably etched with openings or holes (not shown) so that the sacrificial material of layers 510 and 520 can be reached by etching gases used to remove the sacrificial layer. Alternatively, the transparent material 535 may be pre-patterned with pre-etched or embossed openings or holes. It will be appreciated that the interferometric modulators are sealed and protected from the environment surrounding the package housing the interferometric modulators as part of the overall packaging process. Preferably, these holes or openings have a diameter as small as a photolithographic system will allow, and more preferably about 2.4 microns. Those skilled in the art will appreciate that the size, spacing and number of openings will affect the removal rate of the sacrificial layers 510, 520.

较佳使用选择性气体蚀刻工艺来移除牺牲层510、520,以围绕可移动电极506形成光学空腔。可使用标准蚀刻技术来移除牺牲层510、520。具体的气体蚀刻工艺将取决于所要移除的材料。例如,可使用二氟化氙(XeF2)作为释脱气体来移除硅牺牲层。应了解,所述蚀刻工艺是一种选择性蚀刻工艺,其不会蚀刻任何介电材料、半反射性材料、或电极材料。The sacrificial layers 510 , 520 are preferably removed using a selective gas etch process to form an optical cavity around the movable electrode 506 . The sacrificial layers 510, 520 may be removed using standard etching techniques. The specific gas etch process will depend on the material to be removed. For example, xenon difluoride (XeF 2 ) can be used as the release gas to remove the silicon sacrificial layer. It should be appreciated that the etch process is a selective etch process that does not etch any dielectric material, semi-reflective material, or electrode material.

干涉式调制器的最终结构显示于图8C中,其中存在环绕移动电极506的光学空腔。由于半反射性层530位于顶部,因而沿箭头540的方向自各沉积层侧上透过透明衬底535观看干涉式调制器,如在图8C中所示。The final structure of the interferometric modulator is shown in FIG. 8C , where there is an optical cavity surrounding the moving electrode 506 . With the semi-reflective layer 530 on top, the interferometric modulator is viewed through the transparent substrate 535 from the side of the respective deposited layer in the direction of arrow 540, as shown in Figure 8C.

在图8A-8C所示实施例中,应了解,干涉式调制器的可移动层506邻近透明衬底535且固定层502形成于可移动层506下面,以使可移动层506可在所述结构的光学空腔内移动,如在图8C中所示。In the embodiment shown in FIGS. 8A-8C , it will be appreciated that the movable layer 506 of the interferometric modulator is adjacent to the transparent substrate 535 and the fixed layer 502 is formed below the movable layer 506 so that the movable layer 506 can move in the The structure moves within the optical cavity, as shown in Figure 8C.

所属领域的技术人员将了解,在图8D所示实施例中,半反射性层530较佳为铬并可使用一透明电极(较佳为一ITO层并用作一电极)加以补充。如在图8D中所示,ITO层532介于透明衬底535与铬层530之间。该ITO-铬双层结构消除了使用图8A-8C所示实施例中的下部电极502与电介质508这一需要。在该实施例中,一介电层508介于铬530与上部空腔之间。所属领域的技术人员将了解,将一第一牺牲层(未显示)沉积于经预先图案化的透明衬底505上并随后加以移除而形成一下部空腔560,并将一第二牺牲层(未显示)沉积于电极506上面而形成上部空腔565。如在图8D中所示,电极506沉积于经预先图案化的衬底505上,从而在衬底505顶面上形成电极条带,其中通过沉积于沟槽507上方而形成电极506中的间断点。Those skilled in the art will appreciate that in the embodiment shown in Figure 8D, the semi-reflective layer 530 is preferably chrome and can be supplemented with a transparent electrode, preferably an ITO layer and used as an electrode. As shown in FIG. 8D , ITO layer 532 is interposed between transparent substrate 535 and chrome layer 530 . The ITO-Chromium bilayer structure eliminates the need to use the lower electrode 502 and dielectric 508 in the embodiment shown in Figures 8A-8C. In this embodiment, a dielectric layer 508 is interposed between the chrome 530 and the upper cavity. Those skilled in the art will understand that a first sacrificial layer (not shown) is deposited on the pre-patterned transparent substrate 505 and then removed to form a lower cavity 560, and a second sacrificial layer (not shown) is deposited over electrode 506 to form upper cavity 565 . As shown in FIG. 8D , electrode 506 is deposited on pre-patterned substrate 505 to form electrode stripes on the top surface of substrate 505 with discontinuities in electrode 506 formed by deposition over trenches 507 point.

如上面所述,自例如聚合物等透明材料制成的透明的经预先图案化的衬底可用于形成类似于图7A-7E所示的干涉式调制器。在此种干涉式调制器中,如在图8E中所示,不同于在图8A-8C中所示的实施例,透明的经预先图案化的衬底580透射光,并透过透明的经预先图案化的衬底580进行观看。所属领域的技术人员将了解,用于制作此种干涉式调制器的工艺类似于上文参照图8A-8C所述的方法,但电极结构将倒转。所述结构将类似于图7A-7E所示,但通过在沟槽507上面沉积成行的前几个层而消除了用于形成所述行的前几个图案化及蚀刻步骤。As described above, transparent pre-patterned substrates made from transparent materials such as polymers can be used to form interferometric modulators similar to those shown in Figures 7A-7E. In such an interferometric modulator, as shown in FIG. 8E , unlike the embodiment shown in FIGS. 8A-8C , a transparent pre-patterned substrate 580 transmits light and passes A pre-patterned substrate 580 is viewed. Those skilled in the art will appreciate that the process for making such an interferometric modulator is similar to the method described above with reference to Figures 8A-8C, but the electrode structure would be reversed. The structure would be similar to that shown in FIGS. 7A-7E , but the first few patterning and etching steps used to form the rows are eliminated by depositing the first few layers of the rows above the trenches 507 .

如在图8E中所示,在衬底580上面沉积半反射性-ITO双层530、532,以形成电极条带。在半反射性-ITO双层530、532上面沉积一介电层508。然后,沉积一第一牺牲层(未显示)并随后将其移除,以形成一下部空腔560。在第一牺牲层上面以正交条带形式沉积可移动电极506。在可移动电极506上面沉积一第二牺牲层(未显示)并随后将其移除,以形成上部空腔565。如在图8E中所示,可移动电极506处于塌缩状态。为制作完成该结构,在上部空腔565上面形成一可变形层570。As shown in Figure 8E, a semireflective-ITO bilayer 530, 532 is deposited over a substrate 580 to form electrode stripes. A dielectric layer 508 is deposited over the semireflective-ITO bilayers 530,532. Then, a first sacrificial layer (not shown) is deposited and then removed to form a lower cavity 560 . Movable electrodes 506 are deposited in orthogonal stripes on top of the first sacrificial layer. A second sacrificial layer (not shown) is deposited over the movable electrode 506 and then removed to form the upper cavity 565 . As shown in Figure 8E, the movable electrode 506 is in a collapsed state. To complete the structure, a deformable layer 570 is formed over the upper cavity 565 .

尽管上文详细说明已显示、说明及指出本发明的适用于各种实施例的新颖特征,然而应了解,所属领域的技术人员可在形式及细节上对所示装置或工艺作出各种省略、替代及改变,此并不背离本发明的精神。应知道,由于可独立于其他特征来使用或实践某些特征,因而可按一种并不提供所有本文所述特征及优点的形式实施本发明。While the foregoing detailed description has shown, described, and pointed out novel features of the present invention that are applicable to various embodiments, it should be understood that various omissions in form and detail of the devices or processes shown, Substitutions and changes are made without departing from the spirit of the invention. It is to be understood that the invention may be implemented in a form that does not provide all of the features and advantages described herein, because some features may be used or practiced independently of other features.

Claims (48)

1, a kind of method of making MEMS devices, it comprises:
Substrate is provided, and it has a plurality of grooves in the end face of described substrate;
Deposition first electrode layer enters in the described groove on the described end face of described substrate, and wherein said first electrode layer that deposits is discontinuous between described groove and described end face;
On described first electrode layer, form second electrode; And
Form first cavity between first electrode layer on the described substrate and described second electrode described being formed at.
2, the method for claim 1, it further comprises makes described first electrode layer and described second electrode insulation.
3, method as claimed in claim 2, wherein isolation step is included in deposition of dielectric materials on described first electrode layer.
4, method as claimed in claim 3, wherein by before forming described second electrode in sacrificial material on the described dielectric material and remove described expendable material after forming described second electrode and form described first cavity.
5, the method for claim 1, it further is included in and forms second cavity between described second electrode and the semi-reflective layer.
6, method as claimed in claim 5 wherein forms described second cavity and comprises: removed described expendable material in sacrificial material on described second electrode and after forming described semi-reflective layer before forming described semi-reflective layer.
7, method as claimed in claim 5, wherein said semi-reflective layer comprises chromium.
8, method as claimed in claim 5, it further is included in deposit transparent material on the described semi-reflective layer.
9, method as claimed in claim 8 wherein forms described first cavity and comprises: removed described expendable material in sacrificial material on the described dielectric material and after forming described second electrode before forming described second electrode.
10, method as claimed in claim 9, wherein before removing described first sacrifice layer, described transparent material and semi-reflective layer etching have perforate.
11, the method for claim 1 wherein provides step to be included in the described groove of impression in the described substrate.
12, the method for claim 1 wherein provides step to be included in the described groove of ablating in the described substrate.
13, the method for claim 1 wherein provides step to comprise by molding process and form described groove in described substrate.
14, the method for claim 1, the uncontinuity of wherein said first electrode layer at described groove place makes the described first electrode layer patterning.
15, the method for claim 1, wherein said MEMS devices are interferometric modulator.
16, a kind of MEMS devices that forms by the method for claim 1.
17, a kind of display device, it comprises:
Through the substrate of impression, it has a plurality of grooves in the end face that is formed at described substrate;
First electrode layer, it is formed on the described end face of described substrate and enters in described a plurality of groove, and described first electrode layer is discontinuous between described a plurality of grooves and described end face; And
Second electrode, wherein said second electrode is formed on described first electrode layer, and wherein said first electrode layer and described second electrode separate by first cavity.
18, display device as claimed in claim 17, wherein said first electrode layer and described second electrode are by being deposited on dielectric material on described first electrode layer and mutually insulated.
19, display device as claimed in claim 17, each in wherein said a plurality of grooves all has reentrant profile.
20, display device as claimed in claim 17, wherein said substrate is opaque.
21, display device as claimed in claim 17, wherein said first electrode layer forms first electrode with the described second electrode quadrature.
22, display device as claimed in claim 17, it is movably that wherein said second electrode is configured to.
23, display device as claimed in claim 17, it further comprises: semi-reflective layer, it separates by second cavity and described second electrode; And be formed at transparent material on the described semi-reflective layer.
24, display device as claimed in claim 23 is formed with a plurality of holes in the wherein said transparent material.
25, display device as claimed in claim 17, it further comprises:
At least one electric connection in the processor, itself and described first electrode layer and described second electrode, described processor is configured to image data processing; And
Memory storage, itself and described processor electric connection.
26, display device as claimed in claim 25, it further comprises driving circuit, described driving circuit is configured in described first electrode layer and described second electrode at least one and sends at least one signal.
27, display device as claimed in claim 26, it further comprises controller, described controller is configured at least a portion of described view data is sent to described driving circuit.
28, display device as claimed in claim 25, it further comprises image source module, described image source module is configured to described image data transmission to described processor.
29, display device as claimed in claim 28, wherein said image source module comprise receiver, transceiver, and transmitter at least one.
30, display device as claimed in claim 25, it further comprises input media, described input media is configured to receive the input data and described input data is sent to described processor.
31, a kind of method that forms MEMS devices, it comprises:
Substrate with end face is provided, wherein in described end face, forms a plurality of grooves;
At least one layer of deposition on described substrate, wherein said at least one layer comprises first conductive material and discontinuous at described groove and described end face place, thereby forms each row of described layer between the described groove on the described end face; And
Deposit second conductive material, described first conductive material on wherein said second conductive material and the described end face is oriented orthogonally to.
32, method as claimed in claim 31, wherein said at least one layer further comprises dielectric layer and expendable material.
33, method as claimed in claim 31, it further is included in and forms first cavity between described first conductive material and described second conductive material.
34, method as claimed in claim 32, it further is included on described second conductive material and deposits semi-reflective layer, and wherein said semi-reflective layer and described second conductive material separate by cavity.
35, method as claimed in claim 34 wherein forms described cavity between described chromium layer and described second conductive material by removing expendable material between described semi-reflective layer and described second conductive material.
36, method as claimed in claim 31 wherein provides described a plurality of groove to comprise in described end face and impresses.
37, method as claimed in claim 36, it cures described substrate after further being included in impression, provides reentrant profile to give in the described groove each, and wherein said substrate is formed by compound substance.
38, method as claimed in claim 37, the top layer of wherein said compound substance have the thermal expansivity than the bottom floor height of described compound substance.
39, a kind of display device, it comprises:
Substrate, it has a plurality of grooves in the end face of described substrate;
Be used for catoptrical first reflecting member, described first reflecting member is formed on the described end face of described substrate and enters in the described groove, and described first reflecting member is discontinuous between described groove and described end face place; And
Be used for catoptrical second reflecting member, wherein said second reflecting member is formed on described first reflecting member, and wherein said first reflecting member and described second reflecting member separate by first partition member.
40, display device as claimed in claim 39, it further comprises:
The half reflection member, it separates by second partition member and described second reflecting member; And
The member of watching that is used for transmitted light, the described member of watching is formed on the described half reflection member.
41, display device as claimed in claim 39, the shape of wherein said groove make that described first reflecting member is discontinuous on the sidewall of described groove.
42, display device as claimed in claim 39, described first reflecting member on the described end face of wherein said substrate member form each row of described first reflecting member on described end face.
43, display device as claimed in claim 39, wherein said second reflecting member is second reflection horizon, it hangs on the connector that is attached to mechanical layer.
44, display device as claimed in claim 39, it further comprises the insulating component between described first reflecting member and described second reflecting member, wherein said insulating component is the dielectric layer that is positioned on described first reflecting member.
46, a kind of method of operation display device, it comprises:
Be provided at the substrate that has a plurality of grooves in its end face, wherein at least one first electrode layer is formed on the described end face of described substrate and enters in the described groove, and wherein said first electrode layer is discontinuous between described groove and described end face, and wherein said first electrode layer separates by the cavity and second electrode, and described second electrode is formed on the described cavity; And
In described cavity, move described second electrode.
47, method as claimed in claim 46 wherein moves described second electrode and is included in slack position and is subjected to move between the active position described second electrode.
48, method as claimed in claim 46 wherein moves described second electrode and can change described first electrode layer and described second distance between electrodes.
49, method as claimed in claim 46, wherein mobile described second electrode is included between described first electrode layer and described second electrode and applies electrostatic attraction.
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