CN100406979C - Electro-optical device, manufacturing method thereof, and electronic device - Google Patents

Abstract

In an electro-optical device such as a liquid crystal device, the present invention can extremely effectively prevent the charge from remaining on the image signal line and the counter electrode potential line. The peripheral area located in the periphery of the pixel area is used to control the peripheral circuit of the plurality of pixel parts, and the image signal line for supplying the image signal to the peripheral circuit and the ground potential line for supplying the ground potential. The video signal line is electrically connected to the ground potential line via a discharge resistor made of a film having a higher resistance than the conductive film constituting the video signal line and the ground potential line.

Description

Electro-optical device, manufacturing method thereof, and electronic device

technical field

The present invention relates to the technical fields of electro-optical devices such as liquid crystal devices, methods of manufacturing the same, and electronic equipment such as liquid crystal projectors equipped with the electro-optical devices.

Background technique

In such an electro-optical device, an electro-optic substance such as liquid crystal is sandwiched between a pair of substrates. On the element substrate which is one of these substrates, a plurality of pixel electrodes are provided. In addition, a counter electrode facing the plurality of pixel electrodes is provided on a counter substrate that is the other of these substrates. Furthermore, peripheral circuits such as a data line driver circuit and a scan line driver circuit for driving pixel electrodes are provided on the element substrate, and a plurality of routing wirings are routed from a plurality of external circuit connection terminals to the peripheral circuits. Then, the electro-optical device configured in this way is installed in an inspection device capable of supplying a power source, an image signal for testing, etc. when it is completed or delivered, and its operation inspection and operation adjustment are performed.

When the inspection and adjustment are completed and the electro-optical device is removed from the inspection device, charges based on various signals remain on peripheral circuits and wiring of the electro-optical device. In particular, if charges caused by the image signal and the potential of the counter electrode remain on the image signal line and the potential line of the counter electrode, a direct current voltage may be applied between the pixel electrode and the counter electrode, which may cause a voltage difference between the pixel electrode and the counter electrode. The liquid crystal between the two electrodes is burnt. Alternatively, if such charges remain, it becomes difficult to carry out further inspection and adjustment with high precision thereafter.

Therefore, Patent Document 1 proposes a technique in which an external circuit connection terminal connected to an image signal line and an external circuit connection terminal connected to a counter electrode potential line are connected to each other via a resistor or a short-circuit switch outside the electro-optical device. . In addition, in Patent Document 2, it is proposed to connect all routing lines inside the electro-optic device to the ground via an internal resistance line composed of a semiconductor layer constituting a thin-film transistor (hereinafter appropriately referred to as "TFT") for pixel switching. Potential lines, etc. technology. By either technique, residual charges in the electro-optic device as described above can be removed.

[Patent Document 1] Patent No. 3173200

[Patent Document 2] Patent No. 3240829

However, according to the technique disclosed in Patent Document 1, the terminal connected to the video signal line and the terminal connected to the ground potential line are connected between the terminals. Therefore, it is necessary to provide such connection resistors or short-circuit switches outside the electro-optical device. Furthermore, if this technique is applied to form connection resistors and short-circuit switches on the substrate, it will be difficult to secure an area for forming these in a limited area on the substrate. Especially in the case of a small electro-optical device or an electro-optical device in which the image display area is large relative to the substrate, it is very difficult to secure such an area. Furthermore, if the discharge resistor is formed on a small area in the region on the substrate, that is, if the discharge resistor is formed in a minute size, the possibility that the discharge resistor of the minute size is destroyed by static electricity becomes high due to the presence of static electricity. . In particular, when other wires are wired on the upper or lower side of the discharge resistor with a small size through the interlayer insulating film, a capacitor structure is formed through the interlayer insulating layer, and the possibility of a part of the discharge resistor being destroyed by static electricity becomes smaller. extremely high. As a result, forming a resistor or a short-circuit switch in an electro-optic device as disclosed in Patent Document 1 leads to an increase in the size of the substrate and the device as a whole, or leads to deterioration of the device due to electrostatic breakdown, which is extremely disadvantageous in practice.

On the other hand, if the technique disclosed in Patent Document 2 is used, since the discharge resistance is formed at the film for the thin film transistor, the degree of freedom in design is extremely reduced. Therefore, it is difficult or practically impossible to form an appropriately high-resistance discharge resistor in a limited area on the substrate, or to form an appropriately high-resistance discharge resistor in a small area. That is, since the same film is used, there are very large restrictions on the resistance value, area, and position that can be formed in relation to the performance and the like required for the thin film transistor for pixel switching. Also, with this technique, as in the case of Patent Document 1, if a discharge resistor with a minute size is formed, the possibility of being destroyed by static electricity increases.

Contents of the invention

The present invention has been made in view of the above problems, and an object of the present invention is to provide an electro-optical device capable of extremely effectively preventing charge remaining on image signal lines and counter electrode potential lines, a manufacturing method thereof, and an electronic device equipped with such an electro-optic device.

In order to solve the above-mentioned problems, the electro-optical device of the present invention includes, on a substrate, a plurality of pixel units arranged in a pixel region, a peripheral circuit disposed in a peripheral region located around the pixel region for controlling the plurality of pixel units, and An image signal line for supplying an image signal to the peripheral circuit and a ground potential line for supplying a ground potential, the image signal line passing through a film having a higher resistance than the conductive film constituting the image signal line and the ground potential line The discharge resistor is electrically connected to the aforementioned ground potential line.

According to the electro-optical device of the present invention, when it is in operation, clock signals, power signals, control signals, image signals, etc., are used to operate, for example, a data line drive circuit as a part of the peripheral circuit, from the external circuit via the external circuit connection terminal. and other signals are supplied to the data line drive circuit. In parallel with this, various signals such as a clock signal, a power signal, and a control signal are supplied to the scanning line driving circuit from the external circuit via the external circuit connection terminal for operating the scanning line driving circuit as a part of the peripheral circuit. At this time, the ground potential is supplied to the peripheral circuit via the ground potential line, and the image signal is supplied to the peripheral circuit via the image signal line. On the other hand, the counter electrode potential is supplied to the counter electrode via the counter electrode potential line, and further via the vertical conduction terminal and the vertical conduction member. In this way, for example, an image signal is supplied to each pixel portion arranged in a pixel area or a pixel array area from a data line driving circuit via a data line, and a scanning signal is supplied to each pixel portion via a scanning line from a scanning line driving circuit. The electro-optic material such as liquid crystal sandwiched between the pixel electrode and the counter electrode is driven, thereby performing active matrix driving. The so-called "pixel area" here refers to an area on a substrate in which a plurality of pixel units are arranged in plan view, that is, an area for displaying an image by driving a plurality of pixel units. "image display area" is an example or a typical example thereof. Furthermore, such scanning lines and data lines, for example, cross each other on the substrate and are respectively wired in multiples. In addition, such a pixel unit has, for example: a pixel electrode; TFT.

In particular, in the present invention, the image signal line is electrically connected to the ground potential line via a high-resistance discharge resistor. Therefore, even when the electro-optical device is completed or delivered, it is installed in the inspection device, its operation is inspected, its operation is adjusted, and then removed therefrom, the charge remaining in the image signal line in the electro-optic device, or remaining in the image signal line connected to the image The charge of various electronic components in the peripheral circuit of the signal line is also discharged to the ground potential line through the discharge resistor within a short period of time from inspection or adjustment to disassembly. Here, how long the discharge can be performed largely depends on the resistance value of the discharge resistor. Accordingly, the discharge resistor is formed to have a resistance value of 0.1 MΩ to 5 MΩ so that discharge can be performed within a practically optimum time.

Therefore, it is possible to effectively avoid a situation in which electro-optical substances such as liquid crystal sandwiched between the two electrodes are burned by applying a DC voltage between the pixel electrode and the counter electrode due to residual charges when detaching from the inspection device. Furthermore, since there is no residual electric charge, subsequent inspection and adjustment can be performed with high precision. In this case, it is not necessary to provide connection resistors or short-circuit switches outside the electro-optical device as in Patent Document 1 described above. Furthermore, since it is not sufficient to form the discharge resistor with the film of the TFT used in the pixel portion as in the aforementioned Patent Document 2, the degree of freedom in design can also be improved. Accordingly, it is also possible to form an appropriate high-resistance discharge resistor in a limited area on the substrate, or form an appropriate high-resistance discharge resistor in a small area. That is, as long as the same film is not used, such as for pixel switching, etc., in relation to the performance required for the TFT of the pixel portion, the restrictions on the resistance value, area, or position that can be formed can be eliminated.

According to the present invention as described above, it is possible to prevent charge residue in the image signal lines extremely effectively.

In one aspect of the electro-optical device according to the present invention, the pixel portion has a pixel electrode, a counter electrode facing the pixel electrode, and a counter electrode potential for supplying the counter electrode potential to the counter electrode. Wire.

According to this aspect, the pixel portion has a pixel electrode. The counter electrode potential is supplied to the counter electrode facing the pixel electrode via the counter electrode potential line. By electrically connecting the counter electrode potential line to the ground potential via the discharge resistor according to the present invention, it is extremely effective to prevent charge remaining in the counter electrode potential line.

In another aspect of the electro-optic device according to the present invention, the counter electrode potential line is electrically connected to the aforementioned counter electrode potential line via a discharge resistor made of a film having a higher resistance than the conductive film constituting the counter electrode potential line and the ground potential line. Ground potential wire.

According to this aspect, since the counter electrode potential line is electrically connected to the ground potential line through the discharge resistor composed of a film having a higher resistance than the conductive film constituting the counter electrode potential line and the ground potential line, it is connected to the external circuit. When the connection terminal or the leading end of the wiring connected thereto is connected to the ground potential line, the degree of freedom regarding the area and position where the discharge resistor can be formed is increased, thereby increasing the degree of freedom regarding the realizable resistance value. Furthermore, various circuits such as an electrostatic protection circuit and an input protection circuit may be formed between the portion of the counter electrode potential line connected to the discharge resistor and the external circuit connection terminal.

In another aspect of the electro-optic device of the present invention, in at least one wiring of the image signal line and the counter electrode potential line, one end of the wiring is electrically connected to an external circuit connection terminal arranged in the peripheral region. The other end of the wiring is electrically connected to the ground potential line via the discharge resistor.

According to this aspect, at least one of the image signal line and the counter electrode potential line is electrically connected to the ground potential line through the discharge resistor at the other end opposite to the end electrically connected to the external circuit connection terminal. Therefore, since there is no discharge resistor in the middle of the wiring of the image signal line and the counter electrode potential line, it is possible to ensure freedom in the design of other wiring and circuits, and it is possible to effectively prevent the potential of the image signal line and the counter electrode from being damaged. Residue of charge on at least one of the lines.

In another aspect of the electro-optical device according to the present invention, among at least one wiring of the image signal line and the counter electrode potential line, one end of the at least one wiring is electrically connected to a wire arranged outside the peripheral region. The circuit connection terminal is provided with at least one protection circuit among the electrostatic protection circuit and the input protection circuit in the middle of the at least one wiring, and the at least one wiring is in the at least one protection circuit and is electrically connected to the aforementioned discharge resistor. Ground potential wire.

According to this aspect, there is a protection circuit such as an electrostatic protection circuit or an input protection circuit between at least one of the image signal line and the counter electrode potential line connected to the discharge resistor and the external circuit connection terminal. Forming a discharge resistor with a small size also makes the possibility of the discharge resistor with a small size being destroyed by static electricity very low due to the existence of static electricity. As long as the discharge resistor is formed in this way, it does not increase the size of the substrate or the device as a whole, and since it does not cause deterioration of the device due to electrostatic breakdown, it is practically very advantageous.

In another aspect of the electro-optical device according to the present invention, among at least one wiring of the image signal line and the counter electrode potential line, one end of the at least one wiring is electrically connected to a wire arranged outside the peripheral region. In the circuit connection terminal, at least one of the electrostatic protection circuit and the input protection circuit is provided in the middle of the at least one wiring, and the at least one wiring is farther than the at least one protection circuit when viewed from the external circuit connection terminal. One side is electrically connected to the ground potential line via the discharge resistor.

According to this aspect, there is a protection circuit such as an electrostatic protection circuit or an input protection circuit between at least one of the image signal line and the counter electrode potential line connected to the discharge resistor and the external circuit connection terminal. Forming a discharge resistor with a small size also makes the possibility of the discharge resistor with a small size being destroyed by static electricity very low due to the existence of static electricity. As long as the discharge resistor is formed in this way, it does not increase the size of the substrate or the device as a whole, and since it does not cause deterioration of the device due to electrostatic breakdown, it is practically very advantageous.

In another aspect of the electro-optical device of the present invention, the counter electrode potential line and the image signal line are electrically connected to the same ground potential line via the discharge resistor.

According to this aspect, since the counter electrode potential line and the image signal line are connected to the same ground potential line, the potential difference between the two wirings via the discharge resistor can easily become almost non-existent. In other words, it is possible to shorten the time until the potential difference between the two wirings becomes almost non-existent via the discharge resistor.

In another aspect of the electro-optical device according to the present invention, the discharge resistor is formed of a semiconductor film, and an impurity different from the impurity doped with the semiconductor film constituting at least a part of the semiconductor element constituting the pixel portion or the peripheral circuit is added. , doping the semiconductor film constituting the aforementioned discharge resistor.

According to this aspect, instead of forming the discharge resistor from the film used in the TFT of the pixel portion as in the aforementioned Patent Document 2, the discharge resistor is composed of a semiconductor film, and by doping the semiconductor film with the pixel portion or the peripheral circuit The semiconductor film constituting the discharge resistor is doped with impurities different from the impurities. In other words, the semiconductor film constituting the semiconductor element has a resistance value different from that of the semiconductor film constituting the semiconductor element by performing dedicated doping with impurities. For example, the discharge resistor has a resistance value of 0.1 MΩ to 5 MΩ so that the discharge can be performed within a practically optimum time. In particular, since the semiconductor film is doped with dedicated impurities to form the discharge resistor, the impurity concentration or impurity type, or the area or arrangement of the discharge resistor can be set regardless of the semiconductor elements constituting the pixel portion or peripheral circuits. This makes it very easy to secure an area for forming the discharge resistor in a limited area on the substrate. In particular, even in the case of a small electro-optical device or an electro-optical device in which the image display area on the substrate is large, it becomes easy to secure such an area. As a result of these, a discharge resistor having a desired resistance value can be formed in a desired area and at a desired position.

Furthermore, after forming and patterning the semiconductor film constituting the semiconductor element and the semiconductor film constituting the discharge resistor in the same process, impurity doping may be performed in another process. Alternatively, after these semiconductor films are formed and patterned in different steps, impurity doping may be performed in another step.

In another aspect of the electro-optical device of the present invention, the wiring routed on the substrate includes a wiring portion passing through an upper layer side or a lower layer side of the discharge resistor via an interlayer insulating film.

According to this aspect, since the wiring routed on the substrate includes the wiring portion on the upper layer side or the lower layer side passing through the discharge resistor, it is not necessary to allocate a plane area on the substrate on which the discharge resistor is formed for exclusive use of the discharge resistor. On the upper or lower layer side, a routing wiring different from the discharge resistor or a peripheral circuit part is arranged. In particular, if a static electricity protection circuit or an input protection circuit is provided in advance at a predetermined position like the second electro-optic device, regardless of whether the capacitor structure is formed via an interlayer insulating film like this, it is possible to reduce the discharge resistance from being destroyed by static electricity through this part. possibility.

In another aspect of the electro-optical device of the present invention, the image signal line is composed of a plurality of image signal lines supplying a plurality of image signals developed in series and in parallel, and the plurality of image signal lines pass through each of the plurality of discharge resistors. Electrically connected to the ground potential line, the plurality of discharge resistors have the same length and width within a predetermined range, and the wiring portion overlaps all of the plurality of discharge resistors.

According to this form, the length and width of the plurality of discharge resistors (that is, the length of the resistor and the width of the resistor) are consistent within a predetermined range. Preferably, the length and width of the resistors are consistent with the same design value. Furthermore, the wiring portion overlaps all of the plurality of discharge resistors, preferably equally overlaps all of the plurality of discharge resistors. Therefore, depending on how much the lengths and widths of the resistances coincide, or how much they overlap equally, the amounts of charges discharged from a plurality of image signal lines are close to each other, or preferably equal. In other words, the potentials of the image signal lines after discharge are close to each other, or preferably equal to each other, so that the unevenness of each series of image signals of residual charges can be reduced. Thereby, it is possible to effectively avoid unevenness of residual charge generated when detaching from the inspection device, etc., and uneven DC voltage is applied between the pixel electrode and the counter electrode, causing electro-optic substances such as liquid crystals sandwiched between the two electrodes to be damaged. The situation of burning due to unevenness. Therefore, it is possible to effectively prevent display unevenness for each series of image signals.

Furthermore, since there is no unevenness in residual charge, inspection or adjustment to be performed again later can be performed with high precision. More specifically, this aspect can effectively avoid the practical big problem that it becomes impossible to accurately determine the normality or abnormality of the peripheral circuit or the pixel part due to the variation of the residual charge during the inspection. .

In another aspect of the first electro-optic device of the present invention, the discharge resistor is formed of a semiconductor film doped with impurities, and the discharge resistor is connected to at least one of the image signal line and the counter electrode potential line. On the upper portion, there is locally a portion composed of the semiconductor film doped with impurities at a concentration higher than that of the discharge resistor.

According to this aspect, the discharge resistor is formed of a semiconductor film doped with impurities. In particular, since there is locally a portion made of a semiconductor film doped with impurities at a concentration higher than that of the discharge resistor at the connection portion of the discharge resistor, it is possible to effectively prevent the presence of an impurity-undoped portion at the connection portion. The semiconductor film part with extremely high resistance cannot obtain the conductivity between the image signal line or the counter electrode potential line and the discharge resistor. In fact, when impurity doping is performed, such an extremely high-resistance semiconductor film portion may occur due to a dimensional error or pattern error of the mask. It is practically advantageous to construct a low-resistance portion on the connection portion.

In order to solve the above problems, the method for manufacturing an electro-optical device of the present invention is a method for manufacturing an electro-optical device (including various forms thereof) of the present invention described above, which includes: forming the aforementioned pixel portion on the aforementioned substrate, the aforementioned The first forming step of the peripheral circuit, the aforementioned external circuit connection terminal, the aforementioned routing wiring, and the aforementioned discharge resistor, the second forming step of forming the aforementioned counter electrode on the counter substrate, and the interconnection of the aforementioned substrate and the aforementioned counter substrate In the pasting step of pasting, the first forming step includes: a first doping step of doping the first semiconductor film constituting at least a part of the semiconductor element constituting the pixel portion or the peripheral circuit with an impurity at a first concentration; and The first doping step is different from the second doping step of doping the second semiconductor film constituting the discharge resistor with an impurity at a second concentration.

According to the manufacturing method of the electro-optic device of the present invention, the substrate can be formed by the first forming step including various treatments such as film formation treatment, patterning treatment, impurity doping treatment, high temperature treatment, etc., to form the pixel portion, peripheral circuit, External circuit connection terminals, routing wiring, discharge resistors, etc. On the other hand, for the counter substrate, the counter electrode and the like can be formed through a second formation process including, for example, film formation treatment, patterning treatment, impurity doping treatment, high-temperature treatment, and other various treatments. Then, through the bonding process, the substrate and the counter substrate can be bonded so as to finally have a form in which, for example, an electro-optic material such as liquid crystal is sandwiched. In particular, in the first forming step of forming the substrate, the first semiconductor film constituting the semiconductor element constituting at least a part of the pixel portion or the aforementioned peripheral circuit can be doped with an impurity at a first concentration by the first doping step. . In contrast to this, the second semiconductor film constituting the discharge resistor can be doped with impurities at the second concentration by the second doping step dedicated to forming the discharge resistor, which is different from the first doping step. Therefore, since the discharge resistor is not formed from the film used in the TFT of the pixel portion as in the aforementioned Patent Document 2, the discharge resistor is formed by performing dedicated impurity doping on the semiconductor film, so the impurity concentration or impurity type, or the discharge resistor The area, arrangement, and the like can be set regardless of semiconductor elements constituting the pixel portion and peripheral circuits. This makes it easy to form a discharge resistor having a different resistance value from that of the semiconductor film constituting the semiconductor element, for example, as in the case of the above-mentioned electro-optical device according to the present invention.

According to the present invention as described above, it is possible to relatively easily manufacture an electro-optical device capable of effectively preventing charge remaining in the image signal line and the counter electrode potential line.

In one aspect of the method for manufacturing an electro-optical device according to the present invention, in the first forming step, the first and second semiconductor films are formed and formed in the same step before the first and second doping steps. composition.

According to this aspect, since the first and second semiconductor films are formed and patterned in the same step, the manufacturing process can be simplified. However, after forming and patterning these semiconductor films in separate steps, it is also possible to perform dedicated impurity doping on the semiconductor film constituting the discharge resistor.

In another aspect of the method for manufacturing an electro-optic device according to the present invention, in the first forming step, when the first doping step is performed, the second semiconductor film is used to prevent doping at the first concentration. The impurity-doped first resist is covered.

According to this aspect, since the second semiconductor film is covered with the first resist when the first doping step is performed, the impurity concentration or impurity type of the first semiconductor film constituting the semiconductor element can be The second semiconductor film constituting the discharge resistor is formed irrespective of the area or arrangement of the discharge resistor.

In this aspect, in the first forming step, the second doping step may be such that, at the connection portion between the discharge resistor and at least one of the image signal line and the counter electrode potential line, via The second resist exposed to a region wider than the region covered by the first resist is doped with an impurity at the second concentration so that there is locally a region doped with an impurity higher than the concentration of the discharge resistor. part of the aforementioned semiconductor layer.

By manufacturing in this way, a portion made of a semiconductor layer doped with impurities at a concentration higher than that of the discharge resistor can be locally formed on the connection portion of the discharge resistor. Thereby, it is possible to effectively prevent an extremely high-resistance semiconductor film portion not doped with impurities from existing on the connecting portion, and prevent the conductivity between the image signal line or the counter electrode potential line and the discharge resistor from being impossible to obtain. In the case of impurity doping, such an extremely high-resistance semiconductor film portion may occur due to dimensional errors or pattern errors of the mask. It is practically advantageous to construct a lower resistance portion on the connection portion using a resist.

In another aspect of the manufacturing method of the electro-optic device of the present invention, the wiring to be routed includes, on the substrate, a wiring portion on the upper layer side or the lower layer side of the discharge resistor via an interlayer insulating film, and the image signal The line is composed of a plurality of image signal lines for supplying a plurality of image signals developed in series and in parallel, and the plurality of image signal lines are respectively electrically connected to the ground potential line through a corresponding one of the plurality of discharge resistors as the discharge resistors. , the plurality of discharge resistors, the length and width of the resistors are consistent within a predetermined range, the wiring portion overlaps all of the plurality of discharge resistors, and the second doping step is to dope the plurality of discharge resistors in the same process.

According to this form, since a plurality of discharge resistors are doped in the same process through the second doping step, the resistance length and resistance width can be consistent with the same design value for a plurality of discharge resistors, so that all It is easy for a plurality of discharge resistors to overlap equally the wiring portions on the upper layer side or the lower layer side of the discharge resistors through the interlayer insulating film. The unevenness per series of image signals of residual charges can be reduced. Thereby, it is possible to effectively avoid unevenness of residual charge generated when detaching from the inspection device, etc., and uneven DC voltage is applied between the pixel electrode and the counter electrode, causing electro-optic substances such as liquid crystals sandwiched between the two electrodes to be damaged. The situation of burning due to unevenness. Therefore, it is possible to effectively prevent display unevenness for each series of image signals.

The electronic equipment of the present invention is equipped with the electro-optical device of the present invention, so it can realize a magnetic tape of a television, a mobile phone, an electronic manual, a word processor, a viewfinder type, or a monitor intuitive type capable of displaying high-quality images. VCRs, workstations, videophones, POS terminals, touch panels, etc., and various electronic equipment such as image forming devices such as printers, copiers, and facsimiles that use electro-optical devices as exposure heads. In addition, as the electronic device of the present invention, for example, an electrophoretic device of electronic paper, an electron emission device (field emission display and conduction electron emission display), etc. can also be realized.

These functions and other advantages of the present invention will be apparent from the embodiments described below.

Description of drawings

FIG. 1 is a plan view showing the overall configuration of a liquid crystal device according to a first embodiment of the present invention.

Fig. 2 is a sectional view taken along line H-H' of Fig. 1 .

Fig. 3 is a plan view showing the configuration of main parts of the liquid crystal device according to the first embodiment of the present invention.

Fig. 4 is a cross-sectional view of a TFT for arbitrary pixel switching.

FIG. 5 is a partially enlarged plan view of C1 in FIG. 3 .

Fig. 6 is a sectional view taken along line A-A' in Fig. 5 .

7 is a manufacturing process diagram (part 1) of a TFT for a discharge resistor and a pixel switch.

Fig. 8 is a manufacturing process diagram (part 2) of a TFT for a discharge resistor and a pixel switch.

Fig. 9 is a diagram similar to Fig. 5 in a modified example according to the first embodiment.

Fig. 10 is a cross-sectional view similar to Fig. 6 in the first modified example.

Fig. 11 is a cross-sectional view similar to Fig. 6 in a second modified example.

Fig. 12 is a flowchart showing a method of manufacturing a liquid crystal device in the first embodiment.

13 is a plan view showing the configuration of a projector as an example of electronic equipment using an electro-optical device.

14 is a perspective view showing the configuration of a personal computer as an example of electronic equipment using an electro-optic device.

Fig. 15 is a perspective view showing the structure of a cellular phone as an example of electronic equipment using an electro-optical device.

16 is a circuit diagram showing the electrical configuration of an electrostatic protection circuit and a discharge resistor of an electro-optical device according to a second embodiment.

17 is a plan view showing a specific configuration of an electrostatic protection circuit and a discharge resistor of an electro-optical device according to a second embodiment.

Explanation of labels

1a...first semiconductor film, 4a...second semiconductor film, 4d, 4e...high-concentration impurity doped part, 10...TFT array substrate, 11a...lower side light-shielding film, 20. ..counter substrate, 23...shading film, 30...TFT for pixel switching, 50...liquid crystal layer, 61...first resist, 62...second resist, 90...leading and winding wiring, 91, 91a-91f...image signal line, 93...ground potential line, 99...opposite electrode potential line, 101...data line drive circuit, 102.. .External circuit connection terminal, 104...scanning line drive circuit, 106...upper and lower conduction terminal, 107...upper and lower conduction member, 400, 400a～400f, 400L...discharge resistor, 410, 410S. ..Electrostatic protection circuit

Detailed ways

Next, a first embodiment of the present invention will be described with reference to FIGS. 1 to 11 . In the following embodiments, the electro-optical device of the present invention is applied to a TFT active matrix drive type liquid crystal device with a built-in drive circuit.

First, the overall configuration of the electro-optical device according to this embodiment will be described with reference to FIGS. 1 and 2 . Here, FIG. 1 is a plan view showing the configuration of an electro-optical device according to this embodiment, and FIG. 2 is a cross-sectional view taken along line H-H' in FIG. 1 .

In FIGS. 1 and 2 , in the electro-optical device according to the present embodiment, the FFT array substrate 10 and the counter substrate 20 are disposed opposite to each other. The liquid crystal layer 50 is sealed between the TFT array substrate 10 and the opposite substrate 20, and the TFT array substrate 10 and the opposite substrate 20 are formed by a sealing region located around the image display region 10a as an example of the "pixel region" according to the present invention. The seals 52 provided in are bonded to each other.

In FIG. 1 , a light-shielding frame light-shielding film 53 defining a frame region of the image display region 10 a is provided on the counter substrate 20 side in parallel with the inner side of the sealing region where the seal member 52 is arranged. In the peripheral area, the data line driving circuit 101 and the external circuit connection terminal 102 are arranged along one side of the TFT array substrate 10 in an area outside the sealing area where the sealing member 52 is arranged. The sampling circuit 301 is provided so that the sampling circuit 301 is covered with the frame light-shielding film 53 at the inner side than the sealing area along this side. In addition, the scanning line driving circuit 104 is provided outside the sealing area along the two sides adjacent to this one side. Furthermore, a plurality of wirings 105 are provided along the remaining side of the TFT array substrate 10 in order to connect between the two scanning line driving circuits 104 provided on both sides of the image display area 10 a. In addition, on the TFT array substrate 10 , in a region facing the four corners of the counter substrate 20 , vertical conduction terminals 106 for connecting the two substrates by vertical conduction members 107 are arranged. Thereby, electrical conduction can be achieved between the TFT array substrate 10 and the counter substrate 20 .

In FIG. 2 , on the TFT array substrate 10 , a stacked structure of pixel switching TFTs (Thin Film Transistors) serving as pixel switching elements and wirings such as scanning lines and data lines are formed. In the image display region 10a, a pixel electrode 9a is provided on an upper layer of the TFT for pixel switching and wirings such as scanning lines and data lines. On the other hand, a light shielding film 23 is formed on a surface of the counter substrate 20 that faces the TFT array substrate 10 . Further, on the light-shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed to face the plurality of pixel electrodes 9a.

Furthermore, although not shown here, on the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, a discharge resistor and an electrostatic protection circuit described later are formed. In addition, inspection circuits, inspection patterns, and the like for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment can also be formed.

In addition, in devices in which elements are formed on a silicon substrate, such as LCOS and DMD, transistors may be formed as pixel switching elements instead of TFTs.

In addition, when the liquid crystal is in the IPS mode, the counter electrode 21 is provided on the TFT array substrate 10 .

Next, the main configuration of this liquid crystal device will be described with reference to FIG. 3 . Here, FIG. 3 shows the configuration of main parts of the liquid crystal device according to this embodiment.

In FIG. 3, the liquid crystal device becomes a TFT array substrate 10 made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and an opposing substrate 20 (refer to FIG. 2 ) is disposed opposite to each other via a liquid crystal layer, and the control is applied to the image display area 10a. The voltage of the pixel electrodes 9a arranged in a divided manner modulates the configuration of the electric field applied to the liquid crystal layer 50 (see FIG. 2 ) for each pixel. In this way, the amount of transmitted light between the two substrates can be controlled, and the image can be displayed in grayscale. This liquid crystal device adopts the TFT active matrix driving method, and forms a plurality of pixel electrodes 9a arranged in a matrix on the image display area 10a in the TFT array substrate 10, and a plurality of scanning lines 2 and data lines 3 arranged crosswise, A pixel portion corresponding to a pixel is constructed. Furthermore, although not shown here, TFTs that control conduction and non-conduction according to the scanning signals supplied through the scanning lines 2 are formed between each pixel electrode 9a and the data line 3, and are used to maintain the voltage applied to the pixel. Storage capacitor for the voltage of electrode 9a. Further, drive circuits such as the data line drive circuit 101 , the external circuit connection terminal 102 and the static electricity protection circuit 410 are formed in the peripheral area of the image display area 10 a. Furthermore, a plurality of lead wires 90 including an image signal line 91 for supplying the image signals VID1 to VID6 and a ground potential line 93 for supplying the second power sources VSSX, VSSY as a power source of the ground potential are connected to terminals from an external circuit. 102 is routed to drive circuits such as the data line drive circuit 101 . Here, the routing wiring 90 is an example of the "routing wiring" according to the present invention.

On the counter substrate 20 (see FIG. 2 ), a counter electrode 21 is formed to face the pixel electrode 9a. The routing wiring 90 further includes a counter electrode potential line 99 for supplying the counter electrode potential LCCOM to the counter electrode 21 . On the TFT array substrate 10, the upper and lower conduction terminals 106 for electrically connecting the opposite electrode potential line 99 and the opposite electrode 21 are also formed, between the TFT array substrate 10 and the opposite substrate 20 (refer to FIG. 2 ). Vertical conductors 107 are provided to electrically connect the vertical conductor terminals 106 and the counter electrode 21 (see FIG. 2 ) to each other.

The image signal line 91 and the counter electrode potential line 99 are electrically connected to the ground potential line 93a via a discharge resistor 400 having a higher resistance than the conductive film constituting the image signal line 91, the counter electrode potential line 99, and the ground potential line 93, respectively.

Next, the operation of the liquid crystal device of the present embodiment configured in this way will be described with reference to FIG. 3 .

In the operation of the liquid crystal device of this embodiment, the data line driving circuit 101 is operated from an external circuit connected to the external circuit connection terminal 102 via an FPC (flexible printed circuit) or the like via the external circuit connection terminal 102 and the lead wiring 90. Various signals such as a clock signal, a first power supply signal VDDX, a second power supply signal VSSX, control signals, and image signals VID1 to VID6 are supplied to the data line driving circuit 101 . In parallel with this, various signals such as a clock signal, a first power supply signal VDDY, a second power supply signal VSSY, and a control signal are used to operate the scanning line drive circuit 104 from the external circuit via the external circuit connection terminal 102 and the routing wiring 90 . , is supplied to the scanning line driving circuit 104 . At this time, the second power supply signal VSSX at the ground potential is supplied to the data line driving circuit 101 via the ground potential line 93a of the routing wiring 90, and the second power supply signal VSSY at the ground potential is supplied to the scanning circuit through the ground potential line 93b. Line driver circuit 104. Further, the image signals VID1 to VID6 are supplied to the sampling circuit 301 via the image signal line 91 among the routing wirings 90 . On the other hand, the counter electrode potential LCCOM is supplied to the counter electrode 21 (see FIG. 2 ) via the counter electrode potential line 99 in the routing wiring 90 and further via the vertical conducting terminal 106 and the vertical conducting member 107 . Thereby, the data line driving circuit 101 supplies the image signals VID1 to VID6 to the pixel parts via the data lines 3, and the scanning line driving circuit 104 supplies the scanning signals to the pixel parts via the scanning lines 2, and the pixel parts are driven close to each other. The liquid crystal layer 50 sandwiched between the pixel electrode 9a and the counter electrode 21 performs active matrix driving. Furthermore, a plurality of scan lines 2 and data lines 3 are interconnected on the TFT array substrate 10 , respectively. In addition, although illustration is omitted here, in the pixel portion, a pixel electrode 9 a is formed, which is connected to the scanning line 2 with a gate, and transmits the image signals VID1 to VID6 supplied from the data line 3 according to the signal supplied from the scanning line 2 . The scanning signal is selectively supplied to the TFT for pixel switching of the pixel electrode 9a.

In particular, in this embodiment, the image signal line 91 and the counter electrode potential line 99 are electrically connected to the ground potential line 93 a via the high-resistance discharge resistor 400 . Therefore, even if the liquid crystal device is installed in the inspection device at the time of completion or delivery, and then removed from it after its operation inspection and operation adjustment, the image signal line 91 and the counter electrode potential line 99 remaining in the liquid crystal device Charges, or charges remaining in various electronic components in the peripheral circuits such as the data line drive circuit 101 and the scan line drive circuit 104 connected to the image signal line 91 or the counter electrode potential line 99, can also be used for inspection or adjustment. Afterwards, within a short time after disassembly, discharge is conducted to the ground potential line 93a via the discharge resistor 400 . Here, in this embodiment, by forming the discharge resistor to have a resistance value of 0.1 MΩ to 5 MΩ, it is possible to discharge within a practically optimum time.

Therefore, when detaching from the inspection device, etc., it is possible to effectively avoid applying a DC voltage between the pixel electrode 9a and the counter electrode 21 due to residual charges, causing the liquid crystal layer 50 sandwiched between the two electrodes (refer to FIG. 2 ). The situation of being burned. Furthermore, since there is no residual electric charge, inspection or adjustment to be performed again later can be performed with high precision. In this case, there is no need to provide a resistor or a short-circuit switch for connecting to the ground potential line outside the liquid crystal device. Furthermore, since the discharge resistor is not formed by the TFT film used in the pixel portion, the degree of freedom in design is high. As a result, an appropriate high-resistance discharge resistor can be formed in a limited area on the TFT array substrate 10 .

According to the present embodiment as described above, it is possible to extremely effectively prevent charge remaining in the image signal line 91 and the counter electrode potential line 99 .

In FIG. 3 , in this embodiment, in particular, the image signal line 91 and the counter electrode potential line 99 are electrically connected via a discharge resistor 400 at the wiring terminals on the opposite side of the front end connected to the external circuit connection terminal 102, respectively. It is connected to the ground potential line 93a.

Therefore, compared with connecting the external circuit connection terminal 102 or the wiring tip connected thereto to the ground potential line, the degree of freedom regarding the area or position where the discharge resistor can be formed is increased, whereby the degree of freedom regarding the achievable resistance value is also increased. widen. Furthermore, various circuits such as an electrostatic protection circuit 410 or an input protection circuit may be formed between the portion where the image signal line 91 and the counter electrode potential line 99 are connected to the discharge resistor 400 and the external circuit connection terminal 102 .

Furthermore, the image signal line 91 and the counter electrode potential line 99 may be electrically connected to the ground potential line 93 a via the discharge resistor 400 in the middle of the wiring. Also in the case of such a configuration, the same effect as above can be obtained.

In addition, in the present embodiment, an electrostatic protection circuit 410 disposed in the middle of the routing wiring 90 is also formed on the TFT array substrate 10 . Here, as a specific configuration of the static electricity protection circuit 410 , various conventional static electricity protection circuits can be adopted, such as connecting the routing wiring 90 to the power supply wiring via a diode-connected TFT, or via a diode. The image signal line 91 and the counter electrode potential line 99 are electrically connected to the ground potential line via the discharge resistor 400 on the side farther from the electrostatic protection circuit 410 as viewed from the external circuit connection terminal 102 . Furthermore, it may be electrically connected to the ground potential line via the discharge resistor 400 in the electrostatic protection circuit 410 .

According to this embodiment, since the electrostatic protection circuit 410 exists between the portion where the image signal line 91 and the counter electrode potential line 99 are connected to the discharge resistor 400 and the external circuit connection terminal 102, even if a discharge resistor with a small size is formed, 400, it is also possible to make the tiny-sized discharge resistor 400 less likely to be damaged by static electricity due to the existence of static electricity. As long as the discharge resistor 400 is formed in this way, it does not increase the size of the substrate or the device as a whole, and since it does not cause deterioration of the device due to electrostatic damage, it is practically extremely advantageous.

Furthermore, in the present embodiment, the counter electrode potential line 99 and the image signal line 91 are electrically connected to the same ground potential line 93 a via the discharge resistor 400 . Accordingly, the potential difference between the two wirings can be easily brought to a state where there is almost no potential difference via the discharge resistor 400 . In other words, it is possible to shorten the time until the potential difference between the two wirings becomes almost non-existent via the discharge resistor 400 .

Next, the configurations of the pixel switch TFT and the discharge resistor in this embodiment will be described with reference to FIGS. 4 to 6 . Here, FIG. 4 is a cross-sectional view showing a cross-section along a channel region of an arbitrary pixel switching TFT. FIG. 5 is a partially enlarged plan view of C1 in FIG. 3 . Fig. 6 is a sectional view taken along line A-A' in Fig. 5 .

In FIG. 4 , the pixel switch TFT 30 has an LDD (Lightly Doped Drain) structure, has a scanning line 2, and the channel region 1a' of the semiconductor layer 1a that forms a channel by the electric field from the scanning line 2 includes The scanning line 2 is an insulating film 2a of a gate insulating film insulated from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, and a high-concentration source region 1d and a high-concentration drain region 1e of the semiconductor layer 1a.

A first interlayer insulating film 41 is formed on the scanning line 2 to open a contact hole 81 leading to the high-concentration source region 1d and a contact hole 83 leading to the high-concentration drain region 1e.

The lower capacitor electrode 71 of the storage capacitor is formed on the first interlayer insulating film 41 , and is electrically connected to the high-concentration drain region 1 e through the contact hole 83 . On top of these, the second interlayer insulating film 42 opening the contact hole 81 is formed.

The data line 3 is formed on the second interlayer insulating film 42 and is electrically connected to the high-concentration source region 1d through the contact hole 81 . On these, the third interlayer insulating film 43 and the pixel electrode 9a are sequentially formed.

On the other hand, on the lower side of the TFT 30, a lower light-shielding film 11a is provided via the base insulating film 12. The lower side light-shielding film 11 a is provided to shield the channel region 1 a ′ of the TFT 30 and its surroundings from the return light incident into the device from the TFT array substrate 10 side so as not to irradiate it.

In FIG. 5 , the image signal line 91 is composed of a plurality of image signal lines 91 a to 91 f for supplying a plurality of image signals VID1 to VID6 developed in series and parallel, and the plurality of image signal lines 91 a to 91 f pass through a plurality of discharge resistors 400 respectively. A corresponding one of the discharge resistors 400a to 400f is electrically connected to the ground potential line 93a.

In FIG. 6 , the discharge resistor 400 is formed of the impurity-doped semiconductor layer 4 a via the base insulating film 12 on the TFT array substrate 10 . Furthermore, on the connection portion between the discharge resistor 400 and the image signal line 91 and the counter electrode potential line 99, there is locally a high-concentration impurity-doped portion composed of the semiconductor layer 4a doped with impurities at a concentration higher than that of the discharge resistor 400. 4d and 4e. On the discharge resistor 400, the first interlayer insulating film 41 having contact holes 85 and 87 leading to the high-concentration impurity-doped portions 4d and 4e, respectively, is formed.

On the first interlayer insulating film 41, an image signal line 91d and a ground potential line 93a are formed. The image signal line 91d is electrically connected to the high-concentration impurity doped portion 4d via the contact hole 85 , and the ground potential line 93a is electrically connected to the high-concentration impurity doped portion 4e via the contact hole 87 . On top of these, a second interlayer insulating film 42 and a third interlayer insulating film 43 are sequentially formed.

Due to this configuration, it is possible to effectively prevent the presence of an extremely high-resistance semiconductor film portion not doped with impurities on the connection portion, and prevent the image signal line 91 or the counter electrode potential line 99 from becoming inaccessible to the discharge resistor 400. The conductivity between the situation. In fact, when impurity doping is performed, such an extremely high-resistance semiconductor film portion may occur due to a dimensional error or pattern error of the mask. It is practically advantageous to construct a low-resistance portion on the connection portion.

In addition, in this embodiment, the discharge resistor 400 is connected to the ground potential line 93a for the data line driving circuit, but may be connected to the ground potential line 93b for the scanning line driving circuit.

The semiconductor film 4a constituting the discharge resistor 400 is doped with a dedicated impurity different from the impurity doping performed on the semiconductor film constituting the TFT for pixel switching, so that it has a resistance value different from that of the semiconductor film constituting the semiconductor element. .

Next, the manufacturing process of the discharge resistor in this embodiment will be described with reference to FIGS. 7 and 8 . Here, FIG. 7 and FIG. 8 are manufacturing process diagrams of discharge resistors and TFTs for pixel switches.

First, in the step of FIG. 7( a ), a TFT array substrate 10 such as a silicon substrate, a quartz substrate, or a glass substrate is prepared. Here, it is preferable to perform heat treatment at a high temperature of about 850-1300° C., more preferably 1000° C., under an atmosphere of an inert gas such as N ₂ (nitrogen), and perform pretreatment in advance so that the substrate 10 will be processed at a high temperature later. deformation reduction.

Next, on the entire surface of the TFT array substrate 10 processed in this way, by sputtering or the like, a film thickness of about 100 to 500 nm, preferably about 200 nm, such as Ti, Cr, W, Ta, After a light-shielding layer of metal such as Mo and Pb or a metal alloy film such as metal silicide, the lower side light-shielding film 11a of a predetermined pattern formed on the lower side of the TFT for pixel switching is formed by, for example, photolithography and etching.

Next, on the lower side light-shielding film 11a, TEOS (tetraethyl orthosilicate) gas, TEB (tetraethyl borate) gas, TMOP ( tetra methyl oxy phosrate) gas, etc., to form silicate glass films such as PSG, BSG, BPSG, etc., which are doped with NSG (non-doped silicate glass), phosphorus (P) or boron (B), nitrogen The insulating base layer 12 is formed of a silicon oxide film, a silicon oxide film, or the like.

Next, an amorphous silicon film is formed on the insulating base layer 12 by a reduced-pressure CVD method or the like, and a polysilicon film is solid-phase grown by heat treatment. Alternatively, the polysilicon film is directly formed by a reduced-pressure CVD method or the like without passing through the amorphous silicon film. Next, on this polysilicon film, a first semiconductor film 1a and a second semiconductor film 4a having a predetermined pattern are formed by performing photolithography and etching. Furthermore, by performing thermal oxidation or the like, an insulating film 2a serving as a gate insulating film is formed. As a result, the thickness of the first semiconductor film 1a and the second semiconductor film 4a is about 30 to 150 nm, preferably about 35 to 50 nm, and the thickness of the insulating film 2a is about 20 to 150 nm, preferably about 20 to 150 nm. It is thickness of about 30-100nm.

Next, in the process of FIG. 7(b), next, at the TFT portion for pixel switching, a polysilicon film is deposited to a thickness of about 100 to 500 nm by, for example, a reduced-pressure CVD method, and then thermally diffuses phosphorus (P), After this polysilicon film is made conductive, scanning lines 2 having a predetermined pattern are formed by photolithography and etching.

Next, in the process of FIG. 7( c ), the semiconductor layer 1a of low-concentration source region 1b and low-concentration drain region 1c is formed by doping impurity ions at a low concentration in the TFT portion for pixel switching. On the other hand, the discharge resistor portion is previously covered with a resist 60 for preventing impurity doping.

Next, in the process of FIG. 8(a), next, at the TFT portion for pixel switching, by doping impurity ions at a high concentration, a low-concentration source region 1b and a low-concentration drain region 1c are formed, and a high-concentration source region 1b is formed. 1d and the high-concentration drain region 1e, the semiconductor film 1a of the pixel switching TFT 30 having an LDD structure. On the other hand, the discharge resistor portion is previously covered with a resist 61 of a predetermined pattern, whereby the semiconductor film 4a including the high-concentration doped regions 4d and 4e is formed.

Next, in the step of FIG. 8( b ), next, the entire TFT portion for pixel switching is covered with a resist 62 in advance. The discharge resistor portion is previously covered with a resist 62 over the high-concentration doped regions 4d and 4e, and the discharge resistor 400 is formed by doping impurity ions at a predetermined concentration.

Next, in the process of FIG. 8( c ), the lower capacitive electrode 71 and the data line 3 are formed in the TFT portion for pixel switching. On the other hand, at the discharge resistance portion, an image signal line 91 and a ground potential line 93a are formed. First, contact holes 83, 85, and 87 are formed in first interlayer insulating film 41 by, for example, dry etching or wet etching or a combination thereof. Next, a polysilicon film is deposited by, for example, the reduced-pressure CVD method, and phosphorus (P) is thermally diffused to conduct the polysilicon film to form the lower capacitance electrode 71, the image signal line 91, and the ground potential line 93a. On the lower capacitive electrode 71, a dielectric film made of a high temperature silicon oxide film (HTO film) or a silicon nitride film is deposited to a relatively thin film thickness of about 50 nm by, for example, a reduced pressure CVD method, a plasma CVD method, or the like. After a certain thickness, Ti, Cr, W, Ta, Mo, Pb and other metals or metal alloy films such as metal silicides are formed by sputtering to form the upper capacitor electrode. In this way, a storage capacitor is formed. Next, a contact hole 81 is opened in the second interlayer insulating layer 42 . Next, a conductive film 3 a is deposited to form a data line 3 . Thereon, a third interlayer insulating film 43 and a pixel electrode 9a are formed.

According to this embodiment, instead of forming the discharge resistor 400 with a film used in the TFT of the pixel portion as in the aforementioned Patent Document 2, the discharge resistor 400 is formed by connecting the pixel portion with the TFT 30 for switching the pixel, and the semiconductor of the peripheral circuit. Exclusive impurity doping (refer to FIG. 8( b )) in which the impurity doping of the film is different is performed on the semiconductor film constituting the discharge resistor 400 so that it has a resistance value different from that of the semiconductor film constituting the TFT for pixel switching. . In this embodiment, the discharge resistor has a resistance value of 0.1 MΩ to 5 MΩ so that the discharge can be performed within a practically optimum time. In particular, since the discharge resistor 400 is formed by performing dedicated impurity doping (refer to FIG. 8(b)) to the semiconductor film, the impurity concentration or impurity type, or the area or arrangement of the discharge resistor 400, etc., can be compared with those used for pixel switching. The TFT 30 and other semiconductor elements constituting the pixel portion and peripheral circuits are set independently. Therefore, it becomes very easy to ensure an area for forming the discharge resistor 400 on the limited area above the TFT array substrate 10 . Especially in the case of a small liquid crystal device or a liquid crystal device in which the image display region 10a is large in terms of a TFT array substrate, it is easy to secure such an area. As a result of these, the discharge resistor 400 having a desired resistance value can be formed in a desired area and at a desired position.

According to the present embodiment as described above, it is possible to extremely effectively prevent charge remaining in the image signal line 91 and the counter electrode potential line 99 .

Furthermore, after the semiconductor film constituting the semiconductor element and the semiconductor film constituting the discharge resistor are formed and patterned in the same process, impurity doping may be performed in a different process. Alternatively, after these semiconductor films are formed and patterned in different steps, impurity doping may be performed in a different step.

(Modification)

Next, a modified example according to this embodiment will be described with reference to FIGS. 9 to 11 . Here, FIG. 9 is a diagram similar to FIG. 5 in the first modification example according to the present embodiment. Fig. 10 is a cross-sectional view similar to Fig. 6 in the first modified example. Fig. 11 is a cross-sectional view similar to Fig. 6 in a second modified example.

As shown in FIGS. 9 and 10 as a first modification example, the routing wiring 90 may include a wiring portion on the upper layer side of the discharge resistor 400 on the TFT array substrate 10 via an interlayer insulating film. In this configuration, the routing wiring 90 is formed in the same layer as the image signal line 91 at least in a region overlapping the discharge resistor 400 .

In addition, as shown in FIG. 11 as a second modified example, the routing wiring 90 may include a wiring portion on the TFT array substrate 10 that passes through the lower layer side of the discharge resistor 400 via an interlayer insulating film. In this configuration, the routing wiring 90 is formed in the same layer as the lower light-shielding film 11a of the pixel switching TFT at least in the area overlapping the discharge resistor 400 (a layer between the TFT array substrate 10 and the base insulating film 12). middle) is formed.

In this way, since the routing wiring 90 includes the wiring portion passing through the upper layer side or the lower layer side of the discharge resistor 400, it is not necessary to allocate a planar area on the TFT array substrate 10 forming the discharge resistor 400 exclusively for the discharge resistor 400. The routing wiring 90 different from the discharge resistor 400 and peripheral circuit parts may be arranged on the upper layer side or the lower layer side. In particular, as long as the static electricity protection circuit 410 (refer to FIG. 3 ) is provided in advance at a predetermined position as in this embodiment, the discharge resistance 400 can be lowered by this part regardless of whether the structure of the capacitor is formed through the interlayer insulating film like this. Possibility of electrostatic damage.

Furthermore, the image signal line 91 is composed of a plurality of image signal lines 91a to 91f for supplying a plurality of image signals VID1 to VID6 developed in series and parallel, and the plurality of image signal lines 91a to 91f pass through a plurality of discharge resistors 400a as discharge resistors 400, respectively. A corresponding one of the discharge resistors among ~400f is electrically connected to the ground potential line 93a. In the plurality of discharge resistors 400a to 400f, the resistor length L and the resistor width W match within a predetermined range, and this wiring portion of the routing wiring 90 overlaps all of the plurality of discharge resistors 400a to 400f.

With this configuration, the plurality of discharge resistors 400a to 400f have the same resistance length L and resistance width W within a predetermined range, and preferably, the resistance length L and resistance width W are equal to the same design value. Accordingly, the resistance values of the discharge resistors 400a-400f can be consistent (preferably the same) within a predetermined range. Furthermore, the wiring portion of the routing wiring 90 overlaps all of the plurality of discharge resistors 400a to 400f, and preferably overlaps equally to all of the plurality of discharge resistors 400a to 400f. Therefore, depending on how much the resistance length L and the resistance width W match or overlap equally, the amounts of charges discharged from the plurality of image signal lines 91a to 91f are close to each other, or preferably equal. In other words, the potentials of the image signal lines 91a to 91f after discharge are close to each other, or preferably equal to each other, so that the unevenness of each series of image signals VID1 to VID6 of residual charges can be reduced. Thereby, it can be effectively avoided that uneven residual charge occurs when detaching from the inspection device, etc., and uneven DC voltage is applied between the pixel electrode 9a and the counter electrode 21, causing the liquid crystal layer sandwiched between the two electrodes to 50 (refer to FIG. 2 ) is a state of burning due to unevenness. Therefore, it is possible to effectively prevent the occurrence of display unevenness for each series of image signals VID1 to VID6.

Furthermore, since there is no unevenness in residual charge, inspection or adjustment to be performed again later can be performed with high precision. More specifically, it is possible to effectively avoid the practically serious problem of being unable to accurately determine whether the peripheral circuit or the pixel portion is normal or abnormal due to variation in residual charge during inspection.

In this residual charge, it is only necessary to set the above-mentioned predetermined range to such an extent that there is no unevenness for each series of the image signals VID1 to VID6 that is actually damaged. More specifically, as long as the manufacturing error is taken into consideration, the resistance length L and the resistance width related to the plurality of discharge resistances 400a to 400f that do not cause unevenness in the residual charge can be determined by experiments, experiences, simulations, etc. The range of W may be set as the predetermined range described above. In addition, it is sufficient simply to make the resistance length L and the resistance width W of the plurality of discharge resistors 400a to 400f the same, and to design the wiring portions to overlap equally for all of the plurality of discharge resistors 400a to 400f. Furthermore, it is preferable to form the plurality of discharge resistors 400a to 400f in the same process, in addition to the ease of the manufacturing process, it is also easy to make the resistance values uniform.

<Second Embodiment>

Next, a method of manufacturing a liquid crystal device according to the second embodiment will be described with reference to FIGS. 3 , 7 , 8 and 12 . FIG. 12 is a flowchart showing a method of manufacturing a liquid crystal device in this embodiment.

In FIG. 12, the method of manufacturing a liquid crystal device according to this embodiment includes forming a pixel portion 9a on a TFT array substrate 10, peripheral circuits including a data line driving circuit 101, a scanning line driving circuit 104, and external circuit connection terminals. 102, the first forming process (S10) of the routing wiring 90 and the discharge resistor 400, the second forming process (S20) of forming the opposing electrode 21 on the opposing substrate 20, and connecting the TFT array substrate 10 and the opposing substrate 20. Pasting process (S30) of pasting each other.

The first forming step (S10) includes forming a first semiconductor film on a semiconductor element constituting at least a part of the pixel portion 9a shown in FIG. 1a (see FIG. 7( c )) a first doping step ( S11 ) of doping impurities with a first concentration. Furthermore, a second doping step ( S12 ) of doping the second semiconductor film 4 a (see FIG. 8( b )) constituting the discharge resistor 400 with an impurity at a second concentration differently from the first doping step is included.

According to the manufacturing method of the liquid crystal device of the present embodiment, for the TFT array substrate 10, the pixel portion 9a can be formed through the first forming process including film forming treatment, patterning treatment, impurity doping treatment, high temperature treatment and other treatments. , including peripheral circuits such as the data line driving circuit 101, the scanning line driving circuit 104, the external circuit connection terminal 102, the routing wiring 90, the discharge resistor 400, and the like.

On the other hand, the counter electrode 21 and the like can be formed on the counter substrate 20 through a second forming step ( S20 ) including various treatments such as film formation treatment, patterning treatment, impurity doping treatment, and high temperature treatment. Then, the TFT array substrate 10 and the counter substrate 20 can be pasted together through the pasting step so that the liquid crystal layer 50 (see FIG. 2 ) is finally sandwiched.

In particular, in the first forming step (S10) of forming the TFT array substrate 10, the first doping step (S11) can be used to form the pixel portion 9a or include the data line driving circuit 101 and the scanning line driving circuit 104. The first semiconductor film 1 a of a part of the semiconductor element of peripheral circuits such as the like is doped with impurities at a first concentration (see FIG. 7( c )).

Before and after this phase, the second semiconductor film 4a constituting the discharge resistor 400 can be treated by the second doping step (S20) which is different from the first doping step (S10), that is, a dedicated second doping step (S20) for forming the discharge resistor 400. Impurity doping is performed at a second concentration (see FIG. 8( b )).

Therefore, according to the second embodiment, the discharge resistor 400 is formed by performing dedicated impurity doping on the semiconductor film instead of forming the discharge resistor 400 from the film used in the TFT of the pixel portion as in the aforementioned Patent Document 2. Therefore, the impurity concentration Or the type of impurity, or the area or arrangement of the discharge resistor 400 , etc., can be set regardless of semiconductor elements constituting the pixel portion and peripheral circuits including the data line driver circuit 101 and the scan line driver circuit 104 . Accordingly, as in the case of the liquid crystal device according to the first embodiment, it becomes easy to form the discharge resistor 400 having a resistance value different from that of the semiconductor film constituting the TFT 30 for switching pixels.

According to the present embodiment as described above, it is possible to relatively easily manufacture a liquid crystal device capable of preventing charge remaining in the image signal line 91 and the counter electrode potential line 99 very effectively.

In the manufacturing method of the liquid crystal of the present embodiment, in the first forming step (S10), the first semiconductor film 1a and the second semiconductor film 4a are formed in the first doping step (S11) and the second doping step (S12). Previously, film formation and patterning were performed in the same process as each other.

Thus, since the first semiconductor film 1a and the second semiconductor film 4a are formed and patterned in the same step, the manufacturing process can be simplified. However, after forming and patterning these semiconductor films in different steps, it is also possible to perform dedicated impurity doping on the semiconductor films constituting the discharge resistor.

In the method of manufacturing a liquid crystal device according to this embodiment, in particular, in the first forming step (S10), when the first doping step (S11) is performed, the second semiconductor film 4a is used to prevent It is covered with the first resist 61 (FIG. 8(a)) doped with impurities at the first concentration. In addition, the first resist 61 is a resist covering, for example, a rectangular area indicated by a dashed line 61' in FIGS. 5 and 9 .

Therefore, since the second semiconductor film 4a is covered with the first resist 61 (see FIG. 8(a)) when the first doping step (S11) is performed, it can In the semiconductor film 1a, the second semiconductor film 4a constituting the discharge resistor 400 is formed irrespective of its impurity concentration or impurity type, or the area or arrangement of the discharge resistor.

Furthermore, in the first forming step (S10), the second doping step (S12) may be performed via the second resist 62 that exposes a region wider than the region covered by the first resist 61. Impurity doping with the second concentration is performed (refer to FIG. 8( b )), so that at least one connection portion between the discharge resistor 400 and the image signal line 91 and the above-mentioned counter electrode potential line 99 locally exists due to the ratio The discharge resistor 400 is a portion formed of a semiconductor layer doped with impurities at a high concentration. In addition, the second resist 62 has, for example, a rectangular opening as indicated by a dotted line 62' in FIGS. 5 and 9 .

By manufacturing in this way, high-concentration impurity-doped portions 4d and 4e made of a semiconductor layer doped with impurities at a concentration higher than that of the discharge resistor 400 can be locally formed on the connection portion of the discharge resistor 400 . Thereby, it is possible to effectively prevent the presence of an extremely high-resistance semiconductor film portion that is not doped with impurities on the connection portion, and prevent that the conductivity between the image signal line 91 or the counter electrode potential line 99 and the discharge resistor 400 cannot be obtained. Case. In the case of impurity doping, such an extremely high-resistance semiconductor film portion may occur due to a dimensional error or a pattern error of the mask, so by using the first resist whose patterns are slightly shifted from each other like this, 61 and the second resist 62 to build a low-resistance portion on the connecting portion, which is practically advantageous.

In the method of manufacturing a liquid crystal device according to this embodiment, the routing wiring 90 includes a wiring portion passing through the upper layer side or the lower layer side of the discharge resistor 400 on the TFT array substrate 10 via an interlayer insulating film. The image signal line 91 is composed of a plurality of image signal lines 91a to 91f for supplying a plurality of image signals VID1 to VID6 developed in series and parallel, and the plurality of image signal lines 91a to 91f are respectively passed through a plurality of discharge resistors 400a to 91f as the discharge resistor 400 . A corresponding discharge resistor among 400f is electrically connected to the ground potential line. Furthermore, the plurality of discharge resistors 400a-400f, the resistance length L and the resistance width W are consistent within a predetermined range, and the wiring portion overlaps all of the plurality of discharge resistors 400a-400f, and the second doping step (S12) is performed in the same step. The plurality of discharge resistors 400a to 400f are doped.

According to the method of manufacturing a liquid crystal device of this embodiment, since the second doping step (S12) is used to dope the plurality of discharge resistors 400a to 400f in the same step, the plurality of discharge resistors 400a to 400f can be The resistance length L and the resistance width W are the same design value. Therefore, it is possible to make it easier to equally overlap the wiring portions on the upper layer side or the lower layer side of the discharge resistor 400 through the interlayer insulating film for all the plurality of discharge resistors 400a to 400f. It is possible to reduce the unevenness for each series of the image signals VID1 to VID6 of residual charges. Thereby, it can be effectively avoided that uneven residual charge occurs when detaching from the inspection device, etc., and uneven DC voltage is applied between the pixel electrode 9a and the counter electrode 21, causing the liquid crystal 50 sandwiched between the two electrodes to The situation of burning due to unevenness. Therefore, it is possible to effectively prevent the occurrence of display unevenness for each series of image signals VID1 to VID6.

<electronic device>

Next, the case where the above-mentioned liquid crystal device as an electro-optical device is applied to various electronic devices will be described.

First, a projector in which this liquid crystal device is used as a light valve will be described. FIG. 13 is a plan view showing a configuration example of a projector. As shown in FIG. 13, inside the projector 1100, a lamp unit 1102 composed of a white light source such as a halogen lamp is provided. Projection light emitted from one lamp unit 1102 is separated into three primary colors of RGB by four reflecting mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and enters the liquid crystal panel 1110R, which is a light valve corresponding to each primary color. 1110B and 1110G.

The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are respectively driven by primary color signals of R, G, and B supplied from the image signal processing circuit. And, the light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, the R and B lights are bent by 90°, while the G light goes straight. Therefore, as a result of synthesizing the images of the respective colors, a color image is projected on a screen or the like via the projection lens 1114 .

Here, focusing on the display images of the liquid crystal panels 1110R, 1110B, and 1110G, the display images of the liquid crystal panel 1110G must be reversed with respect to the display images of the liquid crystal panels 1110R and 1110B.

Furthermore, since the light corresponding to the primary colors of R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide color filters.

Next, an example in which the liquid crystal device is applied to a mobile personal computer will be described. Fig. 14 is a perspective view showing the configuration of this personal computer. In FIG. 14 , a computer 1200 includes a main body 1204 including a keyboard 1202 and a liquid crystal display unit 1206 . This liquid crystal display unit 1206 is constituted by adding a backlight to the back of the above-mentioned liquid crystal device 1005 .

Furthermore, an example in which the liquid crystal device is applied to a cellular phone will be described. Fig. 15 is a perspective view showing the structure of this portable telephone. In FIG. 15 , a mobile phone 1300 has a plurality of operation buttons 1302 and a reflective liquid crystal device 1005 . In this reflective liquid crystal device 1005, a front light source is provided in front of it as needed.

Furthermore, in addition to the electronic equipment described with reference to FIGS. devices, word processors, workstations, videophones, POS terminals, devices with touch panels, etc. Furthermore, it goes without saying that it can be applied to these various electronic devices.

<Second Embodiment>

A second embodiment of the present invention will be described with reference to Fig. 16 and Fig. 17 .

First, the electrical configuration of the electrostatic protection circuit and the discharge resistor of the electro-optical device according to the second embodiment will be described with reference to FIG. 16 . Here, FIG. 16 is a circuit diagram showing the electrical configuration of the electrostatic protection circuit and the discharge resistor of the electro-optical device according to the second embodiment. In addition, in FIG. 16, the same reference numerals are assigned to the same components as those according to the first embodiment shown in FIGS. 1 to 12, and their descriptions are appropriately omitted.

In the electro-optical device according to the second embodiment, as in the electro-optical device according to the first embodiment shown in FIG. An electrostatic protection circuit 410S is provided in the middle of the signal line 91 .

As shown in FIG. 16, the electrostatic protection circuit 410S has a P-channel TFT 410a and an N-channel TFT 410b. The gate of the P-channel TFT 410a is electrically connected to the power signal source 94 that supplies the first power signal VDDX. On the other hand, the gate of the N-channel TFT 410b is electrically connected to the ground potential line 93a to which the second power supply signal VSSX is supplied. Since the diode connection is performed in this way, the P-channel TFT 410a and the N-channel TFT 410b each function as a diode. Thus, when static electricity, for example, is applied to the image signal line 91 via the external circuit connection terminal 102, the static electricity can be quickly passed through the P-channel TFT 410a at a position on the TFT array substrate 10 that is relatively close to the external circuit connection terminal 102. freed. Therefore, the static electricity protection circuit 410S can prevent the TFT 30 for pixel switching from being destroyed by static electricity by applying static electricity to the image signal line 91 via the external circuit connection terminal 102, for example. In addition, in FIG. 16 , only the static electricity protection circuit 410S provided in the middle of the image signal line 91 for supplying the image signal VID1 is shown, but also in the middle of each of the image signal lines for supplying the image signals VID2 to VID6. An electrostatic protection circuit 410S having the same configuration is provided.

Furthermore, as shown in FIG. 16, in the electro-optical device according to the second embodiment, the image signal line 91 is inside the electrostatic protection circuit 410S, that is, at a position relatively close to the external circuit connection terminal 102 on the TFT array substrate 10, It is electrically connected to the ground potential line 93 a via the discharge resistor 400 . Thereby, similarly to the electro-optical device according to the first embodiment, it is possible to prevent charge from remaining in the image signal line 91 . Furthermore, in the electro-optical device according to the second embodiment, unlike the electro-optical device according to the first embodiment, at the wiring end of the image signal line 91 opposite to the front end connected to the external circuit connection terminal 102, a It is not electrically connected to the ground potential line 93 a via the discharge resistor 400 (see FIG. 3 ). However, the discharge resistor 400 (see FIG. 3 ) may be redundantly provided on the wiring terminal on the opposite side as described above.

Especially in the second embodiment, since the discharge resistor 400 is provided in the static electricity protection circuit 410S (more specifically, when viewed from the external circuit connection terminal 102, the image signal line 91 and the The discharge resistor 400 is electrically connected), so the possibility of the discharge resistor 400 being damaged by static electricity due to the presence of static electricity applied to the image signal line 91 can be very low.

Next, specific configurations of the electrostatic protection circuit and the discharge resistor described above will be described with reference to FIG. 17 . Here, FIG. 17 is a plan view showing a specific configuration of an electrostatic protection circuit and a discharge resistor of an electro-optical device according to a second embodiment.

As shown in FIG. 17, the electrostatic protection circuit 410S has a P-channel TFT 410a and an N-channel TFT 410b.

The P-channel TFT 410a is composed of a semiconductor layer 411a and a gate electrode 412a.

Gate electrode 412a is formed of the same film as scanning line 2 (see FIG. 4 ), and is electrically connected to power signal line 94 formed of the same film as lower capacitive electrode 71 (see FIG. 4 ) through contact hole 812 . Furthermore, the so-called "same film" refers to the film formed in the same process in the manufacturing process, which is the same type of film. The so-called "same film" does not mean that it must be connected into one film. Yes, it is sufficient as long as it is the part of the film that is separated from each other in the same film.

The semiconductor layer 411a is formed of the same film as that of the semiconductor layer 1a (see FIG. 4 ). The source region of the semiconductor layer 411a is electrically connected to the power signal line 94 via the contact hole 811a. On the other hand, the drain region of the semiconductor layer 411a is electrically connected to the video signal line 91 through the contact hole 813a.

The N-channel TFT 410b is composed of a semiconductor layer 411b and a gate electrode 412b.

The gate electrode 412b is formed of the same film as the scanning line 2, and is electrically connected to the power signal line 94 through the contact hole 812b.

The semiconductor layer 411b is formed of the same film as that of the semiconductor layer 1a. The source region of the semiconductor layer 411b is electrically connected to the ground potential line 93a through the contact hole 811b. On the other hand, the drain region of the semiconductor layer 411b is electrically connected to the image signal line 91 through the contact hole 813b.

In FIG. 17 , a discharge resistor 400 is provided in an electrostatic protection circuit 410S. The discharge resistor 400 has substantially the same configuration as the discharge resistor in the first embodiment described with reference to FIG. 6 . The discharge resistor 400 is electrically connected to the ground potential line 93 a through the contact hole 841 , and is electrically connected to the image signal line 91 through the contact hole 842 . Since the discharge resistor 400 is formed in the static electricity protection circuit 410S in this way, the overall size of the TFT array substrate 10 and the electro-optical device will not be increased.

Furthermore, in the present embodiment, the discharge resistor 400 is configured to have a first portion 401 along the ground potential line 93 a and a second portion 402 along the image signal line 91 . Thus, compared to the case where the discharge resistor 400 is composed of only a portion linearly connected between the ground potential line 93a and the image signal line 91 without the first portion 401 and the second portion 402, the discharge resistor 400 can be formed with high resistance. . That is, by lengthening the first portion 401 along the ground potential line 93a, or in addition to or instead of lengthening the second portion 402 along the image signal line 91, the mutual distance between the contact holes 841 and 842 can be lengthened. The resistance value of the discharge resistor 400 is increased in proportion to this length. In this case, in order to increase the resistance of the discharge resistor 400, it is not necessary to widen the wiring pitch among the plurality of wirings including the ground potential line 93a and the video signal line 91 arranged in strips. This feature is practically very advantageous in achieving miniaturization of the wiring and increasing the resistance of the discharge resistor 400 in the limited wiring area on the TFT array substrate 10 .

As described above, according to the electro-optic device of the second embodiment, since the electrostatic protection circuit 410S is provided between the portion of the image signal line 91 connected to the discharge resistor 400 and the external circuit connection terminal 102, even if a minute-sized discharge is formed, The resistor 400 can also reduce the possibility of the discharge resistor 400 being damaged by static electricity due to the presence of static electricity. Forming the discharge resistor 400 in the static electricity protection circuit 410S in this way does not increase the overall size of the TFT array substrate 10 and the electro-optical device, and also does not cause device failure due to electrostatic breakdown.

The present invention is not limited to the above-mentioned embodiments, and can be appropriately changed within the scope of not departing from the spirit or idea of the invention expressed by the technical solution and the description as a whole, and the electro-optical device accompanied by such a change and the electronic equipment equipped with the electro-optical device also belong to this invention. The technical scope of the invention.

Claims (17)

1. an electro-optical device is characterized in that,

On substrate, possess:

Be arranged in a plurality of pixel portions of pixel region,

Be disposed at the periphery that is positioned at aforementioned pixel region the neighboring area, be used for controlling the peripheral circuit of aforementioned a plurality of pixel portions, and

Be used for supplying with the image signal line of picture signal and the earthing potential line of supply earthing potential to aforementioned peripheral circuit,

Aforementioned image signal line is electrically connected on aforementioned earthing potential line via by than the high discharge resistance that film constituted of conducting film resistance that constitutes aforementioned image signal line and aforementioned earthing potential line.

2. the electro-optical device described in claim 1 is characterized in that, wherein,

Aforementioned pixel portions has pixel electrode,

Possess: with aforementioned pixel electrode pair to counter electrode, and

Be used for the counter electrode current potential is supplied to the counter electrode equipotential line of aforementioned counter electrode.

3. the electro-optical device described in claim 2 is characterized in that, wherein,

Aforementioned counter electrode equipotential line is electrically connected on aforementioned earthing potential line via by than the high discharge resistance that film constituted of conducting film resistance that constitutes aforementioned counter electrode equipotential line and aforementioned earthing potential line.

4. the electro-optical device described in claim 3 is characterized in that, wherein,

In the wiring of at least one side in aforementioned image signal line and aforementioned counter electrode equipotential line,

One end of this wiring is electrically connected on the external circuit-connecting terminal that is disposed at aforementioned neighboring area,

The other end of this wiring is electrically connected on aforementioned earthing potential line via aforementioned discharge resistance.

5. the electro-optical device described in claim 2 is characterized in that, wherein,

In the wiring of at least one side in aforementioned image signal line and the aforementioned counter electrode equipotential line,

One end of aforementioned at least one side's wiring is electrically connected on the external circuit-connecting terminal that is disposed at aforementioned neighboring area,

In the holding circuit that is provided with at least one side in electrostatic discharge protective circuit and the input protection circuit midway of aforementioned at least one side's wiring,

In aforementioned at least one side's the holding circuit that is routed in aforementioned at least one side, be electrically connected on aforementioned earthing potential line via aforementioned discharge resistance.

6. the electro-optical device described in claim 2 is characterized in that, wherein,

In the wiring of at least one side in aforementioned image signal line and aforementioned counter electrode equipotential line,

One end of aforementioned at least one side's wiring is electrically connected on the external circuit-connecting terminal that is disposed at aforementioned neighboring area,

In the holding circuit that is provided with at least one side in electrostatic discharge protective circuit and the input protection circuit midway of aforementioned at least one side's wiring,

Aforementioned at least one side's wiring see a side far away than aforementioned at least one side's holding circuit from aforementioned external circuit-connecting terminal, is electrically connected on aforementioned earthing potential line via aforementioned discharge resistance.

7. the electro-optical device described in the claim 2 to 6 any one is characterized in that, wherein,

Aforementioned counter electrode equipotential line is electrically connected on identical aforementioned earthing potential line mutually with aforementioned image signal line via aforementioned discharge resistance.

8. the electro-optical device described in the claim 1 to 6 any one is characterized in that, wherein,

Aforementioned discharge resistance is made of semiconductor film, will with the different impurity of the impurity that semiconductor film mixed of the semiconductor element of at least a portion that formation is become aforementioned pixel portions or aforementioned peripheral circuit, the semiconductor film that constitutes aforementioned discharge resistance is mixed.

9. the electro-optical device described in the claim 1 to 6 any one is characterized in that, wherein, on aforesaid base plate, draw around wiring comprise, via interlayer dielectric by the upper layer side of aforementioned discharge resistance or the wiring portion of lower layer side.

10. the electro-optical device described in claim 9 is characterized in that, wherein,

Aforementioned image signal line is made of the multiple bar chart image signal line of a plurality of picture signals of supplying with the serial parallel expansion,

This multiple bar chart image signal line is electrically connected on aforementioned earthing potential line via each of a plurality of aforementioned discharge resistances respectively,

Aforementioned a plurality of discharge resistance, the length of its resistance is consistent in preset range with width,

Aforementioned wiring portion and all aforementioned a plurality of discharge resistances are overlapping.

11. the electro-optical device described in the claim 2 to 6 any one is characterized in that, wherein,

Aforementioned discharge resistance is made of the semiconductor film that is doped with impurity,

Connecting portion place at least one side of aforementioned discharge resistance and aforementioned image signal line and aforementioned counter electrode equipotential line exists the part that is made of the aforesaid semiconductor film that is doped with impurity than aforementioned discharge resistance concentration highland partly.

12. the manufacture method of an electro-optical device, this electro-optical device, on substrate, possess: a plurality of pixel portions that are arranged in pixel array region, be disposed at the neighboring area of the periphery that is positioned at aforementioned pixel array region, be used for driving the peripheral circuit of aforementioned a plurality of pixel portions, be used for supplying with the image signal line of picture signal and the earthing potential line of supply earthing potential to aforementioned peripheral circuit, be arranged at the pixel electrode of aforementioned pixel portions, with aforementioned pixel electrode pair to counter electrode, and the counter electrode equipotential line that is used for supplying with the counter electrode current potential to aforementioned counter electrode, aforementioned image signal line is via by than the high discharge resistance that film constituted of conducting film resistance that constitutes aforementioned image signal line and aforementioned earthing potential line, be electrically connected on aforementioned earthing potential line, this manufacture method is characterised in that, comprising:

On aforesaid base plate, form the 1st of aforementioned pixel portions, aforementioned peripheral circuit and aforementioned discharge resistance and form operation,

On the subtend substrate, form the 2nd of aforementioned counter electrode and form operation, and

The stickup operation that aforesaid base plate and aforementioned subtend substrate are pasted mutually,

The aforementioned the 1st forms operation comprises: the 1st semiconductor film of semiconductor element that formation is become at least a portion of aforementioned pixel portions or aforementioned peripheral circuit carries out the 1st doping operation of doping impurity and differently the 2nd semiconductor film that constitutes aforementioned discharge resistance is carried out the 2nd doping operation of doping impurity with the 2nd concentration with the 1st doping operation with the 1st concentration.

13. the manufacture method of the electro-optical device described in claim 12 is characterized in that, wherein, form in the operation the aforementioned the 1st, the aforementioned the 1st with the 2nd semiconductor film the aforementioned the 1st with the 2nd doping operation before in identical mutually operation film forming and composition.

14. the manufacture method of the electro-optical device described in claim 12 or 13, it is characterized in that, wherein, form in the operation the aforementioned the 1st, when implementing aforementioned the 1st doping operation, aforementioned the 2nd semiconductor film is by being used for stoping the 1st resist of the doping impurity of carrying out with aforementioned the 1st concentration to cover.

15. the manufacture method of the electro-optical device described in claim 14, it is characterized in that, wherein, form in the operation the aforementioned the 1st, aforementioned the 2nd doping operation is via making the 2nd resist that exposes than the regional wide zone that is covered by aforementioned the 1st resist, carry out doping impurity with aforementioned the 2nd concentration, so that the connecting portion place at least one side of aforementioned discharge resistance and aforementioned image signal line and aforementioned counter electrode equipotential line exists the part that is made of the aforesaid semiconductor film that is doped with impurity than aforementioned discharge resistance concentration highland partly.

16. manufacture method as claim 12 or 13 described electro-optical devices, it is characterized in that, wherein, on aforesaid base plate, have and draw around wiring, aforementioned drawing around wiring comprises, on aforesaid base plate, via interlayer dielectric by the upper layer side of aforementioned discharge resistance or the wiring portion of lower layer side, aforementioned image signal line is made of the multiple bar chart image signal line of a plurality of picture signals of supplying with the serial parallel expansion, this multiple bar chart image signal line is electrically connected on aforementioned earthing potential line via a discharge resistance as the correspondence in a plurality of discharge resistances of aforementioned discharge resistance respectively, aforementioned a plurality of discharge resistance, its resistance length is consistent in preset range with the resistance width, aforementioned wiring portion and all aforementioned a plurality of discharge resistances are overlapping

Aforementioned the 2nd doping operation is mixed to aforementioned a plurality of discharge resistances in same operation.

17. an electronic equipment is characterized in that, wherein possesses the electro-optical device described in any one in the claim 1 to 11.

Images