CN109935555B - Packaging structure of photoelectron chip - Google Patents
Packaging structure of photoelectron chip Download PDFInfo
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- CN109935555B CN109935555B CN201910179161.4A CN201910179161A CN109935555B CN 109935555 B CN109935555 B CN 109935555B CN 201910179161 A CN201910179161 A CN 201910179161A CN 109935555 B CN109935555 B CN 109935555B
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Abstract
一种光电子芯片的封装结构，包括：载板(1)，包括基板平面(11)以及凹槽(12)，基板平面(11)高于凹槽(12)并与凹槽(12)平行；高频电路(2)，固定于基板平面(11)上，高频电路(2)包括电路载体(21)和薄膜电路(22)，其中，薄膜电路(22)设于电路载体(21)上，薄膜电路(22)上设有多个通道，多个通道的一端用于与光电子芯片(5)通道一一对应连接；接头(3)，固定于载板(1)的基板平面(11)侧，接头(3)包括多个绝缘子(31)，多个绝缘子(31)与薄膜电路(22)的多个通道的另一端对应连接；垫片(4)，其设于凹槽(12)内，用于承载光电子芯片(5)。该封装结构简单，有效降低了封装成本和封装时间。
An optoelectronic chip packaging structure, comprising: a carrier board (1), comprising a substrate plane (11) and a groove (12), the substrate plane (11) being higher than the groove (12) and parallel to the groove (12); The high-frequency circuit (2) is fixed on the substrate plane (11), and the high-frequency circuit (2) includes a circuit carrier (21) and a thin-film circuit (22), wherein the thin-film circuit (22) is provided on the circuit carrier (21) , the thin film circuit (22) is provided with a plurality of channels, and one end of the plurality of channels is used for one-to-one connection with the channels of the optoelectronic chip (5); the joint (3) is fixed on the substrate plane (11) of the carrier board (1) On the side, the joint (3) includes a plurality of insulators (31), and the plurality of insulators (31) are correspondingly connected to the other ends of the plurality of channels of the thin film circuit (22); the gasket (4) is arranged in the groove (12) inside, for carrying optoelectronic chips (5). The packaging structure is simple, and the packaging cost and packaging time are effectively reduced.
Description
Technical Field
The invention relates to the technical field of photoelectronic or microelectronic devices, in particular to a packaging structure of a photoelectronic chip.
Background
For a multi-channel array integrated optoelectronic chip, high-frequency packaging is quite complex, technologies such as mechanical protection, thermal isolation, electric connection, optical coupling, electromagnetic shielding and the like are involved, if a traditional tube shell is adopted for packaging, however, the design and processing period of the tube shell is long, often more than three months or half a year, and the cost is high, once the design and processing are finished, the multi-channel array integrated optoelectronic chip can only be applied to a specific integrated chip, and is strong in pertinence and single in task, in addition, the tube shell generally adopts a high-frequency ceramic tube, is high in price, only can be applied to a scene with strict reliability requirements, and is not high in reliability requirements and short in task period, and the traditional tube shell is obviously not the best.
Disclosure of Invention
Technical problem to be solved
In view of the above problems, the present invention provides a package structure of an optoelectronic chip, which effectively reduces the package cost and the package time.
(II) technical scheme
The invention provides a packaging structure of an optoelectronic chip, which comprises: the carrier plate 1 comprises a substrate plane 11 and a groove 12, wherein the substrate plane 11 is higher than the groove 11 and is parallel to the groove 12; the high-frequency circuit 2 is fixed on the substrate plane 11, the high-frequency circuit 2 comprises a circuit carrier 21 and a thin film circuit 22, the thin film circuit 22 is arranged on the circuit carrier 21, a plurality of channels are arranged on the thin film circuit 22, and one ends of the channels are used for being in one-to-one correspondence connection with the channels of the optoelectronic chip 5; the connector 3 is fixed on the substrate plane 11 side of the carrier plate 1, the connector 3 comprises a plurality of insulators 31, and the insulators 31 are correspondingly connected with the other ends of the channels of the thin film circuit 22; and a pad 4 arranged in the groove 12 and used for bearing the optoelectronic chip 5.
Optionally, the connector 3 further includes a fixing structure 32, the fixing structure 32 is provided with a plurality of coaxial connectors 33, the coaxial connectors 33 are connected with the insulators 31 in a one-to-one correspondence manner, and the concentricity deviation is less than or equal to 0.05 mm.
Optionally, the coaxial connector 33 is of one or more of GPPO, SMA and K type.
Alternatively, the width of the spacer 4 is the same as the width of the groove 12, equal to the width of the optoelectronic chip 5.
Optionally, the sum of the thicknesses of the spacer 4 and the optoelectronic chip 5 is equal to the sum of the depth of the recess 12 and the thickness of the high-frequency circuit 2.
Alternatively, the channels of thin-film circuit 22 are microstrip line structures or coplanar waveguide structures.
Alternatively, the material of the thin film circuit 22 is gold, and the material of the circuit carrier 21 is one of aluminum nitride, aluminum oxide, and silicon carbide.
Optionally, the substrate plane 11 and the surface of the groove 12 are both gold plated and have a roughness of less than 1.6.
Optionally, the number of insulators 31 is greater than or equal to the number of channels of the optoelectronic chip 5.
Optionally, the material of the carrier plate 1 is one of tungsten copper, copper or kovar alloy, and the material of the gasket 4 is one of tungsten copper, copper or kovar alloy.
(III) advantageous effects
The invention provides a packaging structure of an optoelectronic chip, which can realize the packaging of the optoelectronic chip (5) by designing simple structures such as a joint (3), a carrier plate (1), a high-frequency circuit (2) and the like, thereby effectively reducing the packaging cost and the packaging time.
Drawings
FIG. 1 schematically illustrates a schematic diagram of a packaging structure of an optoelectronic chip in an embodiment of the present disclosure;
fig. 2 schematically illustrates a structural diagram of a carrier board 1 in a package structure of an optoelectronic chip in an embodiment of the present disclosure;
fig. 3 schematically shows a structural schematic diagram of the high-frequency circuit 2 in the package structure of the optoelectronic chip in the embodiment of the present disclosure;
fig. 4a schematically illustrates a right side oblique view of the structure of the joint 3 in the packaging structure of the optoelectronic chip in the embodiment of the present disclosure;
FIG. 4b schematically illustrates a left side oblique view of the structure of the joint 3 in the packaging structure of the optoelectronic chip in the embodiment of the present disclosure;
FIG. 5 schematically illustrates a packaging structure of a 2-joint optoelectronic chip in an embodiment of the disclosure;
FIG. 6 schematically illustrates a package structure of a 4-tap optoelectronic chip in an embodiment of the disclosure;
fig. 7 schematically illustrates a packaged finished optoelectronic chip 5 in an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
The invention provides a packaging structure of an optoelectronic chip, which is shown in figure 1 and comprises the following components: the carrier plate 1 comprises a substrate plane 11 and a groove 12, wherein the substrate plane 11 is higher than the groove 12 and is parallel to the groove 12; the high-frequency circuit 2 is fixed on the substrate plane (11), the high-frequency circuit 2 comprises a circuit carrier 21 and a thin film circuit 22, the thin film circuit 22 is arranged on the circuit carrier 21, a plurality of channels are arranged on the thin film circuit 22, and one ends of the channels are used for being in one-to-one correspondence connection with the channels of the optoelectronic chip 5; the connector 3 is fixed on the substrate plane 11 side of the carrier plate 1, the connector 3 comprises a plurality of insulators 31, and the insulators 31 are correspondingly connected with the other ends of the channels of the thin film circuit 22; and a pad 4 arranged in the groove 12 and used for bearing the optoelectronic chip 5.
Specifically, referring to fig. 2, the carrier 1 includes a substrate plane 11 and a groove 12, where the substrate plane 11 is higher than the groove 12 and is parallel to the groove 12;
the shape of the substrate plane 11 and the groove 12 are preferably rectangular, and they are arranged closely, so that one side of the substrate plane 11 is connected with one side of the groove 12, wherein, the substrate plane 11 is used for placing the high frequency circuit 2, the surface of the substrate plane 11 is plated with gold, and the surface roughness is less than 1.6, so as to ensure good grounding conductivity, and the width of the substrate plane 11 is preferably equal to the width of the high frequency circuit 2; the groove 12 is used for placing the gasket 4, the surface of the groove is plated with gold, the surface roughness of the groove is less than 1.6, good grounding conductivity is guaranteed, the width of the groove is the same as that of the gasket, the width of the gasket is the same as that of the optoelectronic chip 5, therefore, the width of the groove 12 is the same as that of the optoelectronic chip 5, the side wall and the bottom surface of the groove 12 are perpendicular to each other by 90 degrees, and the error is less than 0.1 degree.
In addition, the carrier plate 1 further comprises a limiting wall 13 and a carrier plate positioning hole 14, wherein the limiting wall 13 is located on the other side of the groove 12, which is not adjacent to the substrate plane 11, and is used for limiting the space position of the gasket; the carrier positioning holes 14 are used for connecting with external parts, and in the embodiment of the present invention, the carrier positioning holes 14 are used for mechanically connecting with the connectors 3. The carrier plate 1 should have good thermal and electrical conductivity, so the material can be tungsten copper, kovar alloy, etc.
Referring to fig. 3, the high-frequency circuit 2 is fixed on the substrate plane (11), the high-frequency circuit 2 includes a circuit carrier 21 and a thin film circuit 22, wherein the thin film circuit 22 is disposed on the circuit carrier 21, the thin film circuit 22 is provided with a plurality of channels, and one ends of the plurality of channels are used for being connected with the channels of the optoelectronic chip 5 in a one-to-one correspondence manner;
specifically, the high-frequency circuit 2 includes a circuit carrier 21 and a thin-film circuit 22, wherein the circuit carrier 21 is used for supporting the thin-film circuit 22, and therefore should have a certain mechanical strength, and the material thereof may be aluminum nitride, aluminum oxide, silicon carbide, or the like; the thin film circuit 22 is used for transmitting microwave signals of the optoelectronic chip 5, the material of the thin film circuit is preferably gold, the structure of the thin film circuit can be a microstrip line structure or a coplanar waveguide structure, the number of channels on the thin film circuit 22 is the same as that of the channels on the optoelectronic chip 5, one end of the thin film circuit 22 is connected with the optoelectronic chip 5, the distance between the channels at the end connected with the optoelectronic chip 5 is the same as that of the channels of the optoelectronic chip 5, the channels are in one-to-one correspondence, and the thin film circuit 22 and the optoelectronic chip 5 are connected through processes such as gold wire bonding, so that good electric connection between the. The high-frequency circuit 2 is fixed to the substrate plane 11 by a circuit carrier 21. The high-frequency circuit 2 mainly functions to transmit a microwave signal, and should have good high-frequency characteristics, thermal conductivity, and electrical conductivity.
The connector 3, see fig. 4a and 4b, the connector 3 is fixed on the substrate plane 11 side of the carrier plate 1, the connector 3 comprises a plurality of insulators 31, and the plurality of insulators 31 are correspondingly connected with the other ends of the plurality of channels of the thin film circuit 22;
the number of the insulators 31 is larger than or equal to the number of the channels of the high-frequency circuit, the connectors 3 are fixed on the substrate plane 11 side of the carrier plate 1, and the distance between the insulators 31 is the same as the distance between the channels at the other end of the thin film circuit 22, so that the channels of the high-frequency circuit 2 and the insulators 31 are correspondingly connected through a welding process, good electric connection is ensured, and signals are transmitted;
the connector 3 further comprises a fixing structure 32 and a connector positioning hole 34, wherein the fixing structure 32 is provided with a plurality of coaxial connectors 33, the coaxial connectors 33 are used for inputting and outputting signals, the types of the coaxial connectors 33 can be GPPO, SMA, K type and the like, the number of the coaxial connectors 33 is the same as that of the insulators 31, each coaxial connector 33 is correspondingly connected with one insulator 31, and the concentricity deviation of each coaxial connector 33 is less than or equal to 0.05 mm; the joint positioning holes 34 are used for performing precise mechanical connection with the carrier positioning holes 14 of the carrier 1, and the deviation between the center line of the joint positioning holes and the center line of the carrier positioning holes 14 is not more than 0.05mm, so as to achieve good positioning effect. The joint 3 has the functions of mechanical fixation and high-frequency signal transmission, and the material of the joint can be tungsten copper, kovar alloy and the like.
And the gasket 4 is arranged in the groove 12 and used for bearing the optoelectronic chip 5, so that the channels of the optoelectronic chip 5 are connected with the channels at one end of the high-frequency circuit one by one.
Specifically, the width of the pad 4 is the same as that of the optoelectronic chip 5, the surface of the pad is plated with gold, and the surface roughness of the pad is less than 1.6, so as to ensure good grounding conductivity, meanwhile, the side wall of the pad is perpendicular to the ground by 90 degrees, and the error is less than 0.1, so as to realize close contact with the groove. The sum of the thicknesses of the spacer 4 and the optoelectronic chip 5 is equal to the sum of the depth of the groove 12 and the thickness of the high-frequency circuit 2, so that the channels of the optoelectronic chip 5 are connected with the channels at one end of the high-frequency circuit 2 one by one. The gasket 4 should have good electrical and thermal conductivity and may be made of tungsten copper, kovar, etc.
As shown in fig. 5 and 6, which are schematic diagrams of two-joint and four-joint assembly, the structure can be used for joints with various numbers, and in addition, a plurality of joints can be arranged, only part of the joints are used, and the scheme that the number of the insulators 31 of the joints 3 is larger than the number of the channels of the optoelectronic chip 5 is within the protection scope of the invention.
Referring to fig. 7, the specific application method of the structure is as follows:
(1) firstly, determining a high-frequency circuit 2 and a connector 3 according to the number of channels and the channel spacing of the optoelectronic chip 5 to be packaged, and determining the thickness of a required gasket 4 according to the thickness of the optoelectronic chip 5 to be packaged;
(2) mechanically connecting and fixing the joint positioning holes 34 of the joints 3 and the carrier plate positioning holes 14 of the carrier plate 1;
(3) the high-frequency circuit 2 is correspondingly welded with the insulator 31 on the substrate plane 11 of the carrier plate 1 and the thin-film circuit 22 close to the joint 3 by gold-tin solder or the like;
(4) fixing the gasket 4 on the groove 12 of the carrier plate 1 through gold-tin solder or conductive adhesive and the like;
(5) the optoelectronic chip 5 is fixed on the pad 4 by gold-tin solder or conductive paste, and the channels of the optoelectronic chip are aligned with the channels of the thin film circuit 22 one by one and electrically connected by gold wire bonding or other processes, so as to generate the packaged optoelectronic chip 5 shown in fig. 7.
It should be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present invention. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present invention. And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate contents of the embodiments of the present invention. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" or "comprises" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. An optoelectronic chip package, comprising:
the carrier plate (1) comprises a substrate plane (11) and a groove (12), wherein the substrate plane (11) is higher than the groove (12) and is parallel to the groove (12);
the high-frequency circuit (2) is fixed on the substrate plane (11), the high-frequency circuit (2) comprises a circuit carrier (21) and a thin film circuit (22), the thin film circuit (22) is arranged on the circuit carrier (21), a plurality of channels are arranged on the thin film circuit (22), and one ends of the channels are used for being in one-to-one correspondence connection with the channels of the optoelectronic chip (5); the thin film circuit (22) is used for transmitting microwave signals of the optoelectronic chip (5); the channel of the thin film circuit (22) is of a microstrip line structure or a coplanar waveguide structure;
the connector (3) is fixed on the substrate plane (11) side of the carrier plate (1), the connector (3) comprises a plurality of insulators (31), and the insulators (31) are correspondingly connected with the other ends of the channels of the thin film circuit (22);
a spacer (4) arranged in the recess (12) for carrying the optoelectronic chip (5).
2. The packaging structure of the optoelectronic chip according to claim 1, wherein the connector (3) further comprises a fixing structure (32), a plurality of coaxial connectors (33) are disposed on the fixing structure (32), the coaxial connectors (33) are connected to the insulators (31) in a one-to-one correspondence, and the concentricity deviation is less than or equal to 0.05 mm.
3. The encapsulation structure of an optoelectronic chip according to claim 2, wherein the type of the coaxial connector (33) is one or more of GPPO, SMA and K.
4. The optoelectronic chip package structure according to claim 1, wherein the width of the pad (4) is the same as the width of the groove (12), and is equal to the width of the optoelectronic chip (5).
5. The optoelectronic chip package structure according to claim 1, wherein the sum of the thicknesses of the pad (4) and the optoelectronic chip (5) is equal to the sum of the depth of the recess (12) and the thickness of the high-frequency circuit (2).
6. The packaging structure of an optoelectronic chip according to claim 1, wherein the material of the thin film circuit (22) is gold, and the material of the circuit carrier (21) is one of aluminum nitride, aluminum oxide and silicon carbide.
7. The packaging structure of an optoelectronic chip according to claim 1, wherein the substrate plane (11) and the surface of the groove (12) are both gold-plated and have a roughness of less than 1.6.
8. The optoelectronic chip packaging structure according to claim 1, wherein the number of the insulators (31) is greater than or equal to the number of the optoelectronic chip (5) channels.
9. The packaging structure of an optoelectronic chip according to claim 1, wherein the material of the carrier (1) is one of a tungsten copper alloy, a kovar alloy or pure copper, and the material of the pad (4) is one of a tungsten copper alloy, a kovar alloy or pure copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910179161.4A CN109935555B (en) | 2019-03-08 | 2019-03-08 | Packaging structure of photoelectron chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910179161.4A CN109935555B (en) | 2019-03-08 | 2019-03-08 | Packaging structure of photoelectron chip |
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| Publication Number | Publication Date |
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| CN109935555A CN109935555A (en) | 2019-06-25 |
| CN109935555B true CN109935555B (en) | 2021-05-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| SE519529C2 (en) * | 2001-06-14 | 2003-03-11 | Ericsson Telefon Ab L M | Opto capsule for an opto hybrid, lower housing part of such an opto capsule and an optoelectronic module |
| KR100575969B1 (en) * | 2003-11-14 | 2006-05-02 | 삼성전자주식회사 | Thio-can structured optical module |
| CN204119175U (en) * | 2014-09-23 | 2015-01-21 | 成都玖信科技有限公司 | A kind of ultra-wideband microwave power amplifier module based on PCB technology |
| CN108919439A (en) * | 2018-09-20 | 2018-11-30 | 深圳市埃尔法光电科技有限公司 | A kind of novel photoelectric converter and photoelectric connecting device |
| CN109324213A (en) * | 2018-11-02 | 2019-02-12 | 武汉电信器件有限公司 | A kind of aging equipment and aging method of chip of laser |
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