CN109920810B - Image sensor and forming method thereof - Google Patents
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Abstract
An image sensor and a method of forming the same, the image sensor comprising: the substrate comprises a plurality of first areas and second areas positioned between the adjacent first areas; the sensor layer is positioned on the surface of the substrate, and a photodiode is arranged in the sensor layer in the first area; the metal grid is positioned on the surface of the sensor layer in the second area; the color filter layer is positioned on the surface of the sensor layer in the first area; a recess in the color filter layer; and the refraction layer is filled in the groove, and the refraction layer is made of a material with a refractive index smaller than that of the color filter layer. The invention helps to reduce optical crosstalk.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof.
Background
An image sensor is a device that converts an optical image into an electronic signal, and is widely used in electronic optical devices such as digital cameras. Image sensors can be classified into two types, i.e., Charge Coupled Devices (CCDs) and Metal-Oxide Semiconductor (CMOS) devices, according to the digital data transmission method. Among them, the CMOS sensor has been developed rapidly in recent years due to its high integration level, low power consumption, fast speed, low cost, and the like.
The fill factor is an important parameter for measuring the pixel sensitivity of the image sensor, and particularly, the fill factor refers to the proportion of the photosensitive area to the whole pixel area. An important development goal of today's CMOS sensors is to increase the fill factor size. Increasing the fill factor becomes more difficult as current pixel sizes are scaled down. The currently popular technology is to change the conventional Front Side Illumination (FSI) into Back Side Illumination (BSI), in which transistors such as an amplifier and interconnection circuits are disposed on the Back of the CMOS sensor, and the Front of the CMOS sensor is left entirely for the photodiode, so that a 100% fill factor can be realized.
However, the existing backside illuminated CMOS image sensor has optical crosstalk, which affects the imaging quality.
Disclosure of Invention
The invention solves the problem of providing an image sensor and a forming method thereof, which are beneficial to reducing optical crosstalk.
To solve the above problems, the present invention provides an image sensor comprising: the substrate comprises a plurality of first areas and second areas positioned between the adjacent first areas; the sensor layer is positioned on the surface of the substrate, and a photodiode is arranged in the sensor layer in the first area; the metal grid is positioned on the surface of the sensor layer in the second area; the color filter layer is positioned on the surface of the sensor layer in the first area; a recess in the color filter layer; and the refraction layer is filled in the groove, and the refraction layer is made of a material with a refractive index smaller than that of the color filter layer.
Optionally, the difference between the refractive indexes of the color filter layer material and the refractive layer material is 0.3-0.5.
Optionally, the refractive index of the refraction layer is 1-1.5.
Optionally, the material of the refraction layer is an organic polymer material.
Optionally, the material of the refraction layer is polytetrafluoroethylene or polymethyl methacrylate.
Optionally, the shape of the groove is rectangular or inverted isosceles trapezoid.
Optionally, the depth of the groove is 1/3-2/3 of the thickness of the color filter layer.
The present invention also provides an image sensor forming method, including: providing a substrate, wherein the substrate comprises a plurality of first areas and second areas positioned between the adjacent first areas; forming a sensor layer on the surface of the substrate, wherein a photodiode is arranged in the sensor layer in a first area; forming a metal grid on the surface of the sensor layer in the second area; forming a color filter layer on the surface of the sensor layer in the first area; forming a groove in the color filter layer; and forming a refraction layer filling the grooves, wherein the refraction layer is made of a material with a refractive index smaller than that of the color filter layer.
Optionally, a dry etching process is used to form the groove.
Optionally, the process parameters of the dry etching process include: the etching gas includes oxygen or chlorine.
Compared with the prior art, the technical scheme of the invention has the following advantages:
light rays of different angles enter the color filter layer within a single pixel region. Because the grooves in the color filter layers are filled with the refraction layer, and the refraction index of the refraction layer material is smaller than that of the color filter layer material, the incident light entering a single color filter layer can be completely irradiated on the sensor layer corresponding to the color filter layer through the two-time refraction of the side wall and the bottom surface of the refraction layer, so that the optical crosstalk effect is avoided, and the imaging quality of the image sensor is improved.
Drawings
FIG. 1 is a schematic diagram of an image sensor;
FIGS. 2 to 6 are schematic structural views of steps of a first embodiment of a method for forming an image sensor according to the present invention;
fig. 7 to 10 are schematic structural views of steps of a second embodiment of a method for forming an image sensor according to the present invention.
Detailed Description
As is known in the art, the imaging quality of the conventional semiconductor structure still needs to be improved.
Fig. 1 is a schematic structural diagram of an image sensor.
Now, with reference to fig. 1, the analysis is performed in connection with an image sensor comprising: a substrate 10, the substrate 10 comprising a number of first zones i and second zones ii located between adjacent first zones i; a sensor layer 12 located on the surface of the substrate 10, wherein a first region i has a photodiode 20 in the sensor layer 12; a metal grid 40 located on the surface of the sensor layer 12 in the second region ii; a color filter layer 51 positioned on the surface of the sensor layer 12 in the first region i; and a lens 62 positioned on the surface of the color filter layer 51.
In the above-mentioned image sensor structure, light rays with different angles are focused by the lens 62 and enter the color filter layers 51, respectively, and irrelevant photons are filtered and removed to form monochromatic light corresponding to the color filter layers 51. The monochromatic light enters the photodiodes 20 corresponding to the color filter layer 51, respectively, is absorbed by the corresponding photodiodes 20 and excites electron-hole pairs, thereby realizing photoelectric conversion.
The image sensor formed by the method has certain optical crosstalk, and the reason for analyzing the optical crosstalk is as follows:
specifically, taking the color filter layer 51 as an example, light rays with different angles enter the color filter layer 51, and the light rays with different angles include: incident light a and incident light B irradiated into the color filter layer 51. Wherein the incident angle of the incident light a on top of the color filter layer 51 is smaller than the incident angle of the incident light B on top of the color filter layer 51. The incident light a can enter the range of the corresponding photodiode 20 after passing through the color filter layer 51, and photoelectric conversion is achieved in the corresponding photodiode 20.
However, since the incident angle of the incident light B on the top of the color filter layer 51 is large, that is, the path length of the incident light B obliquely incident is deeper, the incident light B is filtered by the color filter layer 51 and finally irradiates the photodiode 20 corresponding to the adjacent color filter layer 51, thereby causing the crosstalk effect of the image sensor.
In order to solve the above problems, the present invention provides an image sensor and a method for forming the same, wherein a color filter layer has a groove filled with a refraction layer. The refractive index of the refraction layer material is smaller than that of the color filter layer material, so that the direction of light rays can be adjusted, and the crosstalk effect can be prevented.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
First embodiment
Fig. 2 to 6 are schematic structural diagrams of steps of a first embodiment of a method for forming an image sensor according to the present invention.
Referring to fig. 2, a substrate 100 is provided, the substrate 100 including a plurality of first regions i and second regions ii located between adjacent first regions i; forming a sensor layer 120 on the surface of the substrate 100, wherein a photodiode 200 is arranged in the sensor layer 120 in a first region I; forming a metal grid 400 on the surface of the sensor layer 120 in the second area II; a color filter layer 510 is formed on the surface of the sensor layer 120 in the first region i.
The substrate 100 includes: a support substrate 100 (not shown), a dielectric layer (not shown) located on a surface of the support substrate 100, and an electrical interconnect structure (not shown) located within the dielectric layer.
The method for forming the substrate 100 and the sensor layer 120 includes: providing a semiconductor substrate (not shown), wherein the semiconductor substrate comprises a plurality of first regions I and second regions II located between adjacent first regions I; forming a sensor layer 120 in the semiconductor substrate, wherein the photodiode 200 is arranged in the sensor layer 120 in a first region I; after forming the sensor layer 120, forming a dielectric layer (not shown) on the first surface of the semiconductor substrate, the dielectric layer having an electrical interconnect structure (not shown) therein; forming a supporting substrate on the surface of the dielectric layer; after the support base is formed, the semiconductor substrate is thinned from a second surface of the semiconductor substrate, which is opposite to the first surface, until the sensor layer 120 is exposed.
In this embodiment, the semiconductor substrate is a silicon substrate. In other embodiments, the semiconductor substrate material may also be germanium, silicon carbide, silicon germanium, silicon on insulator, or germanium on insulator.
In this embodiment, after forming the sensor layer 120 and before forming the metal grid 400, the method further includes: forming a groove in the II sensor layer 120 in the second area; forming an insulating layer 130 filling the trench; an isolation layer 300 is formed on the surface of the sensor layer 120 and the surface of the insulating layer.
In this embodiment, the insulating layer 130 is made of silicon nitride. In other embodiments, the material of the insulating layer 130 may also be silicon oxide or silicon oxynitride.
The isolation layer 300 is made of silicon oxide, silicon nitride or silicon oxynitride. In this embodiment, the material of the isolation layer 300 is silicon oxide.
In this embodiment, the forming step of the metal grid 400 includes: forming a metal grid film (not shown) on the surface of the isolation layer 300, the metal grid film having a pattern layer thereon, the pattern layer exposing a top surface of the first region i metal grid film; and etching the metal grid film by taking the pattern layer as a mask until the surface of the isolation layer 300 is exposed to form the metal grid 400.
In this embodiment, the metal grid 400 is made of aluminum. In other embodiments, the material of the metal grid 400 may also be copper or copper aluminum alloy.
The color filter layer 510 is located in the first region i, and the color filter layer 510 corresponds to the photodiodes 200 one to one.
The number of the color filter layers 510 is several, one color filter layer 510 is disposed on the top of the sensor layer 120 on one photodiode 200, and the color filter layer 510 on the top of the sensor layer 120 on one photodiode 200 is a red color filter layer 510, a green color filter layer 510, or a blue color filter layer 510. In a direction parallel to the substrate surface, a red color filter layer 510, a green color filter layer 510, and a blue color filter layer 510 are in this order. Light entering the color filter layer 510 can be filtered by the color filter layer 510 such that light irradiated onto the corresponding photodiode 200 is monochromatic light.
In this embodiment, the color filter layer 510 is formed by a spin-on process.
In this embodiment, the color filter layer 510 is made of photoresist, pigment, organic solvent or additive, and has a refractive index of 1.6-2.0.
Referring to fig. 3, a groove 501 is formed in the color filter layer 510.
In this embodiment, a dry etching process is used to form the groove 501.
The technological parameters of the dry etching process comprise: the etching gas includes oxygen or chlorine.
In this embodiment, the shape of the groove 501 is rectangular.
In this embodiment, the depth of the groove 501 is 1/3-2/3 of the thickness of the color filter layer 510. If the depth of the groove 501 is smaller than 1/3 of the thickness of the color filter layer 510, the light entering the color filter layer 510 obliquely is difficult to irradiate the side wall of the groove 501, and then a refraction layer 520 is formed in the groove 501, and the refraction layer 520 is difficult to adjust the direction of part of the light. If the depth of the recess 501 is greater than 2/3, which is the thickness of the color filter layer 510, the color filter layer 510 has poor color filtering effect on light, which results in non-monochromatic light emitted from the color filter layer 510, and thus the image quality of the image sensor is affected.
Referring to fig. 4, a refractive layer 520 filling the grooves 501 is formed, and the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510.
The refraction layer 520 is used for adjusting the direction of light entering the color filter layer 510 in an oblique incidence manner, so that the included angle between the light and the vertical direction is reduced, and the light can be favorably and completely irradiated onto the sensor layer 120 corresponding to the color filter layer 510, thereby reducing optical crosstalk and improving the imaging quality of the image sensor.
In this embodiment, the refraction layer 520 is formed by a spin coating process.
The difference value of the refractive indexes of the material of the color filter layer 510 and the material of the refraction layer 520 is 0.3-0.5. The difference ratio is about 20-30%.
In this embodiment, the refractive index of the refractive layer 520 is 1 to 1.5.
The material of the refraction layer 520 is an organic polymer material. In this embodiment, the material of the refraction layer 520 is teflon. In other embodiments, the material of the refractive layer 520 may also be polymethyl methacrylate.
Referring to fig. 5, an interface layer 610 is formed on the surface of the color filter layer 510, the surface of the metal grid 400, and the surface of the refractive layer 520, and a lens 620 is formed on the surface of the interface layer 610 in the first region i.
In this embodiment, the interface layer 610 is formed by a spin coating process.
The interface layer 610 serves to planarize the surface of the color filter layer 510 and the surface of the metal grid 400, which helps to improve the compactness of the lens 620 and the color filter layer 510.
The lenses 620 correspond to the color filter layers 510 one to one.
The lenses 620 can function to focus light such that light incident on the lenses 620 can enter the corresponding color filter layer 510 to be received by the corresponding photodiode 200.
Fig. 6 is an enlarged view of a region C of the image sensor shown in fig. 5.
The adjustment of the light direction by the refraction layer 520 is described in detail below with reference to fig. 5 and 6.
Referring to fig. 5 and 6, incident light 710 is obliquely incident light entering the color filter layer 510 (refer to fig. 5), and the incident light 710 is irradiated onto the sidewall of the refractive layer 520.
Since the refractive layers 520 and the color filter layers 510 have different refractive indexes, the incident light 710 is refracted on the sidewalls of the refractive layers 520.
The first incident angle of the incident light 710 on the sidewall of the refractive layer 520 is θ 1, the first refractive angle is θ 2, and the first normal 701 is perpendicular to the sidewall surface of the refractive layer 520.
Since the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510, θ 2 > θ 1 according to the law of refraction.
By refraction of the sidewall of the refraction layer 520, the light direction of the first refraction light 720 is different from the light direction of the incident light 710.
The first refracted light 720 continues to travel within the refractive layer 520 and impinges on the bottom surface of the refractive layer 520. Also, the first refracted light 720 is refracted at the bottom surface of the refractive layer 520. The second incident angle is α 1, the second refractive angle is α 2, and the second normal 702 is perpendicular to the bottom surface of the refractive layer 520.
Since the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510, α 1 > α 2 according to the law of refraction.
By refraction at the bottom of the refraction layer 520, the light direction of the second refraction light 730 is different from the light direction of the first refraction light 720.
Compared to the incident light 710, the angle between the second refracted light 730 and the vertical direction is reduced by the refraction of the side wall and the bottom of the refraction layer 520. Wherein the vertical direction is parallel to the second normal 702. Therefore, the second refracted light 730 is more easily irradiated onto the photodiode 200 (refer to fig. 5) corresponding to the color filter layer 510, so that optical crosstalk can be reduced.
Second embodiment
Fig. 7 to 10 are schematic structural views of steps of a second embodiment of a method for forming an image sensor according to the present invention.
Referring to fig. 7, unlike the previous embodiment, in the process of forming the groove 501, the shape of the groove 501 is an inverted isosceles trapezoid.
In this embodiment, a dry etching process is used to form the groove 501.
The technological parameters of the dry etching process comprise: the etching gas includes oxygen or chlorine.
In this embodiment, the depth of the groove 501 is 1/3-2/3 of the thickness of the color filter layer 510.
Referring to fig. 8, a refractive layer 520 filling the grooves 501 is formed, and the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510.
In this embodiment, since the shape of the groove 501 is an inverted isosceles trapezoid, the shape of the refraction layer 520 is an inverted isosceles trapezoid.
Referring to fig. 9, an interface layer 610 is formed on the surface of the color filter layer 510, the surface of the metal grid 400, and the surface of the refractive layer 520, and a lens 620 is formed on the surface of the interface layer 610 in the first region i.
The lenses 620 correspond to the color filter layers 510 one to one.
Fig. 10 is an enlarged view of a region D of the image sensor shown in fig. 9.
Referring to fig. 9 and 10, incident light 710 is refracted for the first time on the sidewall surface of the refractive layer 520, the first incident angle is θ 1, the first refraction angle is θ 2, and the first normal 701 is perpendicular to the sidewall surface of the refractive layer 520.
Since the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510, θ 2 > θ 1 according to the law of refraction.
After the first refraction, the light direction of the first refracted light 720 is different from the light direction of the incident light 710.
On the bottom surface of the refraction layer 520, the first refracted light 720 undergoes a second refraction, the second incident angle is α 1, the second refraction angle is α 2, and the second normal 702 is perpendicular to the bottom surface of the refraction layer 520.
Since the refractive index of the material of the refractive layer 520 is smaller than that of the material of the color filter layer 510, α 1 > α 2 according to the law of refraction.
After the second refraction, the light direction of the second refracted light 730 emitted from the bottom of the refraction layer 520 is different from the light direction of the first refracted light 720.
Compared to the incident light 710, the angle between the second refracted light 730 and the vertical direction is reduced by the refraction of the side wall and the bottom of the refraction layer 520, which is helpful for the sensor layer 120 corresponding to the color filter layer 510 to avoid optical crosstalk.
Accordingly, the present invention also provides an image sensor formed by the above method, and referring to fig. 5, the image sensor includes: the substrate 100 comprises a plurality of first areas I and second areas II located between the adjacent first areas I; a sensor layer 120 located on the surface of the substrate 100, wherein a photodiode 200 is located in the sensor layer 120 in a first region I; a metal grid 400 positioned on the surface of the sensor layer 120 in the second region II; a color filter layer 510 located on the surface of the sensor layer 120 in the first region i; a groove in the color filter layer 510; and a refractive layer 520 filling the grooves, wherein the refractive index of the material of the refractive layer 520 is less than that of the material of the color filter layer 510.
The depth of the groove is 1/3-2/3 of the thickness of the color filter layer 510.
In this embodiment, the groove is rectangular, and correspondingly, the refraction layer 520 is rectangular.
In this embodiment, the refractive index of the refractive layer 520 is 1 to 1.5.
The material of the refraction layer 520 is an organic polymer material. In this embodiment, the material of the refraction layer 520 is teflon. In other embodiments, the material of the refractive layer 520 may also be polymethyl methacrylate.
In other embodiments, as shown in fig. 9, the shape of the groove may also be an inverted isosceles trapezoid, and accordingly, the shape of the refraction layer 520 is an inverted isosceles trapezoid.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. An image sensor, comprising:
the substrate comprises a plurality of first areas and second areas positioned between the adjacent first areas;
the sensor layer is positioned on the surface of the substrate, and a photodiode is arranged in the sensor layer in the first area;
the metal grid is positioned on the surface of the sensor layer in the second area;
the color filter layer is positioned on the surface of the sensor layer in the first area;
a recess in the color filter layer;
the refraction layer is filled in the groove, and the refraction layer is made of a material with a refractive index smaller than that of the color filter layer;
wherein, the shape of recess is rectangle or inverted isosceles trapezoid.
2. The image sensor of claim 1, wherein a difference in refractive index between the color filter layer material and the refractive layer material is 0.3 to 0.5.
3. The image sensor as in claim 2, wherein the refractive layer has a refractive index of 1 to 1.5.
4. The image sensor as claimed in claim 1, wherein the material of the refraction layer is an organic polymer material.
5. The image sensor of claim 4, wherein the material of the refractive layer is polytetrafluoroethylene or polymethylmethacrylate.
6. The image sensor of claim 1, wherein the depth of the recess is 1/3-2/3 of the thickness of the color filter layer.
7. An image sensor forming method, comprising:
providing a substrate, wherein the substrate comprises a plurality of first areas and second areas positioned between the adjacent first areas;
forming a sensor layer on the surface of the substrate, wherein a photodiode is arranged in the sensor layer in a first area;
forming a metal grid on the surface of the sensor layer in the second area;
forming a color filter layer on the surface of the sensor layer in the first area;
forming a groove in the color filter layer;
forming a refraction layer filling the groove, wherein the refraction layer is made of a material with a refractive index smaller than that of the color filter layer;
wherein, the shape of recess is rectangle or inverted isosceles trapezoid.
8. The image sensor forming method of claim 7, wherein the recess is formed using a dry etching process.
9. The method of claim 8, wherein the process parameters of the dry etching process comprise: the etching gas includes oxygen or chlorine.
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| US6737719B1 (en) * | 2002-10-25 | 2004-05-18 | Omnivision International Holding Ltd | Image sensor having combination color filter and concave-shaped micro-lenses |
| US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
| US8319301B2 (en) * | 2008-02-11 | 2012-11-27 | Omnivision Technologies, Inc. | Self-aligned filter for an image sensor |
| US20140339615A1 (en) * | 2013-05-16 | 2014-11-20 | ViaEra Technologies Company Limited | Bsi cmos image sensor |
| US9513411B2 (en) * | 2014-07-31 | 2016-12-06 | Visera Technologies Company Limited | Double-lens structures and fabrication methods thereof |
| US9570493B2 (en) * | 2015-04-16 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric grid bottom profile for light focusing |
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Effective date of registration: 20230712 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: No. 599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |