CN109849201A - A kind of wafer splitting device and its method - Google Patents
A kind of wafer splitting device and its method Download PDFInfo
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- CN109849201A CN109849201A CN201711221347.9A CN201711221347A CN109849201A CN 109849201 A CN109849201 A CN 109849201A CN 201711221347 A CN201711221347 A CN 201711221347A CN 109849201 A CN109849201 A CN 109849201A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000001179 sorption measurement Methods 0.000 claims abstract description 4
- 239000003463 adsorbent Substances 0.000 claims description 18
- 230000000740 bleeding effect Effects 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 121
- 238000005516 engineering process Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
A kind of wafer splitting device of the invention and its method, the device include a main body, have clamping device in the main body, for wafer is fixed on the body；Negative pressure system is used for the wafer adsorption in main body, and forms confined space；Positive pressure system, the confined space for being formed to the wafer and the main body apply gas, disconnect the wafer according to preformed Cutting Road, and the wafer is carried out splitting and forms crystal grain.The present invention uses gas moment pressure by wafer splitting for crystal grain, and high yield rate reduces chipping phenomenon.
Description
Technical field
The invention belongs to semiconductor material or high hard high crisp field of material technology, are related to a kind of semiconductor crystal wafer processing unit (plant)
And its method, it is particularly suitable for a kind of wafer splitting device and its method.
Background technique
With the progress and development of science and technology, the cutting technique of semiconductor or high hard high crisp material is also being constantly brought forth new ideas.
Existing wafer splitting technique is that the overlay film wafer of preparatory well cutting is placed on machining position, and cutting can be cut by laser in advance
Or cutter cutting method.Wafer itself is placed on dedicated film, this is realized by wafer laminating machine.Overlay film wafer
It is placed on chopping block, external force is applied to cut wafer road by chopper, wafer is made to split along Cutting Road.
Although existing wafer splitting technique can cooperate ccd image positioning system, alignment Cutting Road carries out splitting for wafer
It splits and obtains multiple crystal grain, but still have the disadvantages that in contraposition cleaving step, the straightness of broadsword v.broadsword, chopper and cutting
The depth of parallelism in road, the index requests such as flatness of chopping block are very high, will make the chopper that can not be directed at Cutting Road completely if any deviation, and
Directly contribute wafer damage；A Cutting Road can only be cleaved every time, and cannot cleave more scale chips wafers (can only cleave and run through
Road, non-through road need pour mask), production efficiency is very low, and technique requires excessively high.
In view of defect existing for above-mentioned existing wafer splitting technique, the present invention is based on the particularity of existing product wafer,
Such as the Microstructure Sensor wafer of MEMS, there are the wafers such as high crisp coating on surface, based on new laser cutting parameter, as laser is hidden
Shape cutting etc. invents a kind of new crystal grain cleaving process, can improve existing wafer in conjunction with experience abundant and professional knowledge
Cleaving process makes it with more practicability.
Laser has been used as a kind of tool application in all trades and professions.Due to the characteristic of the high brightness high intensity of laser, and swash
The size of light hot spot can focus on micron dimension by focus lamp, therefore laser processing technology is having high-precision processing request
Industry in by favor, especially in ceramics, monocrystalline silicon and contour, hard, the crisp unmanageable cutting technique of sapphire,
Laser processing technology is especially welcome.
By taking semicon industry as an example, the slice process of wafer is the first step in rear road assembly technology.The technique is by wafer
It is divided into single chip, for subsequent chip bonding, wire bonding and test technology.When chip size is smaller and smaller, integrate
Higher and higher, traditional mechanical microtomy production capacity decline is spent, fragment rate rises, and the rejection rate of generation increases.In such case
Under, laser cutting technique is able to show advantage.Since laser belongs to non-contact type processing, the work of mechanical stress is not generated to wafer
With, to wafer damage it is smaller.Therefore laser wafer microtomy obtains development energetically.
Although laser technology application largely alleviate drawbacks described above, however in laser technology in use, its
The problem of heat affected area is excessive and slag splash is polluted is not properly settled yet, these disadvantages are enough to influence or destroy the property of chip
Energy, especially transparent material, it is particularly evident to slag pollution problem.Conventional laser processing especially is carried out to high hard high crisp material
Afterwards, sliver chipping problem is particularly evident.The line light spot laser inscribe either used on the market is still put hot spot multilayer and is cut
It cuts, during sliver, if ablation energy is excessive, cutting straight line degree and surface chipping numerical value can be very big, directly affect chip
Quality；If ablation energy is too small, sliver technique can become complicated, will use dedicated equipment, even if in this way can not
Guarantee higher straightness and chipping index, in particular for the chip on a wafer there are many size, traditional handicraft will lead to
It crosses multiple pour mask sliver and is just able to achieve wafer spread sheet, not only guaranteed cut quality required precision using the method, but also can be convenient fast
Prompt spread sheet.
Summary of the invention
It is an object of the invention to provide a kind of new wafer splitting techniques, especially swashing in face of new semiconductor material and newly
The wafer (such as stealthy cutting) of light cutting method, improves wafer splitting yield, technic index is improved, such as the straight line after sliver
, the indexs such as chipping.
Wafer splitting device of the invention includes a main body, has clamping device in the main body, for fixing wafer
On the body；Negative pressure system is used for the wafer adsorption in main body, and forms confined space；Positive pressure system is used for
The confined space formed to the wafer and the main body applies gas, keeps the wafer disconnected according to preformed Cutting Road
It opens, the wafer is subjected to splitting and forms crystal grain.
As one embodiment of the present invention, the wafer bottom surface has film, and the film is connected with the framework of fixed wafer
It connects, framework described in the gripping means grips, so that the wafer is fixed on the body.
As one embodiment of the present invention, the negative pressure system includes adsorbent equipment and bleeding point, the adsorbent equipment
For the slot for being formed in the body upper surface, the slot is communicated with the bleeding point.
As one embodiment of the present invention, the slot along the body surfaces annular spread, so as in the wafer and
Confined space is formed between the body surfaces.
As one embodiment of the present invention, the positive pressure system includes pressure chamber and inflating port, the pressure chamber
It is formed in the inside of the adsorbent equipment, to form positive pressure space in the pressure chamber.
As one embodiment of the present invention, the diameter of the pressure chamber is greater than the brilliant diameter of a circle.
As one embodiment of the present invention, there is the wafer table to cut Cutting Road or internal Cutting Road.
The present invention also provides a kind of wafer splitting methods, have follow steps: a, the wafer bottom surface pad pasting by well cutting, even
In framework；B, the wafer with film is placed in the main body of wafer splitting device, it, will by framework described in gripping means grips
The wafer is fixed on the body；C, negative pressure system is opened, adsorbent equipment is evacuated, the film of wafer bottom surface is close to
On the body, vacuum suction is realized；D, positive pressure system is opened, pours setting pressure from inflating port to pressure chamber moment
Gas, the gas pressure of generation with the back side that is distributed in the wafer；E, it reduces negative pressure system and closes positive pressure system, make institute
It states in pressure chamber when reaching normal pressure, closes negative pressure system, unclamp clamping device, wafer splitting is completed.
It is dedicated that the present invention adsorbs the wafer that wafer bottom surface is sticked simultaneously during wafer splitting, using vacuum suction
Film, the wafer film used in the techniques such as sliver spread sheet, it has certain tension.Air pressure will not touch wafer during applying
Front has the MEMS such as micro-structure or surface to have structures, the gas pressures such as more crisp coating circuit to be applied to particularly with surface
The film layer of backside of wafer.The pressure that gas applies is uniform, and applying area is whole wafer, can disposably make wafer Yan Geqie
Multiple crystal grain are cut while being cleaved into, technique beat is fast.Gas application is will not to generate the soft contact of wafer because of chopper to wafer
The problems such as chipping that pressurization generates.
Detailed description of the invention
Fig. 1 is wafer splitting device global sections figure of the invention；
Fig. 2 is wafer splitting device top view of the invention；
Fig. 3 is that wafer splitting device wafer of the invention compresses figure；
Fig. 4 is wafer splitting device wafer punching press cracking pattern of the invention；
Fig. 5 is to cleave schematic diagram after wafer of the invention is cut；
Fig. 6 is schematic diagram after wafer splitting spread sheet of the invention；
The meaning respectively marked in figure is as follows:
1: framework；
2: film；
3: wafer；
4: main body；
5: adsorbent equipment；
6: pressure chamber；
7: clamping device；
8: bleeding point；
9: inflating port；
10: table cuts Cutting Road
11 inside Cutting Roads
Specific embodiment
Wafer splitting device of the invention is described in detail with reference to the accompanying drawing:
As shown in Figure 1, 2, 3, wafer splitting device of the invention has main body 4, and clamping device 7, wafer is arranged in main body 4
Pad pasting 2 is posted in 3 bottom surface, and pad pasting 2 is connected with the framework FRAME1 of fixed wafer 3, and clamping device 7 is for the wafer that is fixedly clamped
3 framework FRAME1, so that wafer 3 is fixed in main body 4, wafer splitting device also has with negative pressure system and positive pressure system
System, negative pressure system includes adsorbent equipment 5 and the bleeding point communicated with adsorbent equipment 58, for wafer 3 to be adsorbed on main body 4,
Positive pressure system include press chamber 6 and with the inflating port 9 that communicates of pressure chamber, form crystal grain for cleaving wafer.
In a preferred embodiment of the invention, the main body 4 of wafer splitting device is truncated cone-shaped, and clamping device 7 is arranged
In the upper surface of main body 4, circumferentially it is evenly arranged.The adsorbent equipment 5 of negative pressure system of the invention, which specifically can be, to be arranged in master
The annular groove 5 of 4 upper surface of body, annular groove 5 are connected by bleeding point 8 with air extractor (not shown).The annular groove of adsorbent equipment 5
It is set to the inside of clamping device 7.For adsorbing the wafer 3 after clamping device 7 clamps so as between wafer 3 and main body 4
Enclosure space is constituted, specifically, the film 2 of 3 bottom surface of wafer can be adsorbed, FRAME1 can also be adsorbed, or directly adsorb wafer 3.
Which kind of mode no matter is selected, forms confined space between wafer 3 and main body 4 as long as realizing to facilitate subsequent positive pressure system sliver
?.
In a preferred embodiment of the invention, the pressure chamber 6 of positive pressure system is set in the upper surface of main body 4
Centre, on the inside of the annular groove of adsorbent equipment 5.Pressure chamber 6 forms positive pressure by the inflation of inflating port 9, so as in suction above-mentioned
The annular groove of adsorption device 5, which is formed by enclosure space, forms positive pressure space, moment inflation, the gas pressure that pressure chamber generates
It is evenly distributed on the back side of wafer 3, so that formation table be made to cut the wafer 3 of Cutting Road 10 or internal Cutting Road 11 in bottom surface
Under the action of pad pasting 2, drum surface deformation occurs, expands wafer film protrusion, while wafer can be disconnected according to Cutting Road before, from
And cleave whole wafer successfully as multiple crystal grain, as shown in Figure 3,4.
It is the cutting being respectively formed on wafer 3 that documented table, which cuts Cutting Road 10 or internal Cutting Road 11, in the present invention
Road, table, which is cut Cutting Road 10 and be can be, cuts Cutting Road 10, inside cutting in the surface table that 3 surface of wafer is formed with laser or cutter
Road is then the inside Cutting Road that laser internal cutting is formed in the inside of wafer 3, as shown in Figure 5.
Above embodiment of the present invention merely to illustrate the specific implementation principle of wafer splitting device of the invention compared with
For preferred embodiment, not to the limitation of structure of the invention, the main body 4 of experience splitting device of the invention can be circle
Platform shape, be also possible to rectangular or other skilled in the art it is conceivable that shape, the annular groove of adsorbent equipment 5 can make
Circular ring shape is also possible to other annulars, and such as square, polygon or other shapes are also possible to ring seal or do not seal
The structure closed, the confined space being formed by between 3 main body 4 of wafer can be the structure of the sealing in above embodiment,
It can be the structure of opposing seal to be formed when the annular groove of i.e. adsorbent equipment is that annular is not closed or is annular space distribution
Opposing seal structure.Positive pressure system of the invention is also possible to realize using negative pressure system, i.e., in pressure chamber 6
Negative pressure is formed, makes wafer when gas forms negative pressure in the chamber 6 that presses, the cydariform deformation to concave is generated, to realize crystalline substance
Circle splitting is crystal grain.
Wafer splitting method specific operation process of the invention is as follows:
A is the wafer for preparing well cutting first, this wafer 3 can be knife saw cutting or laser table is cut, and is cut
Groove depth 1/3 or so of whole wafer thickness, such as Fig. 6, be also possible to the wafer crossed by laser stealth cutting processing, cut
Upward, wafer bottom surface pad pasting 2 is connected in the framework (FRAME) 1 of dedicated fixed wafer mouth.
B is put the wafer 3 with film on the table, FRAME1 is compressed by clamping device 7, such as figure four.
C opens bleeding point 8, is evacuated to adsorbent equipment 5, is tightly attached to the film 2 of wafer bottom surface on station, realizes that vacuum is inhaled
It is attached.
After the film absorption of d wafer bottom surface reaches setting negative pressure, the gas of setting pressure, gas are poured by 9 moment of inflating port
Moment, the gas pressure that pressure chamber 6 generates was evenly distributed in the whole wafer back side full of pressure chamber 6.
E can uniformly be such that whole wafer is cleaved into multiple when the Cutting Road of wafer is after the stress generated by gas differential pressure
Crystal grain.
F reduces the flow velocity of bleeding point 8, makes vacuum suction pressure reduction, and close inflating port 9, when pressure 6 pressure of chamber reaches
When to indoor normal pressure, bleeding point 8 is closed, pressure clamping device 7 is opened, takes wafer away, splitting terminates.
It should be noted that the diameter of the pressure chamber 6 of the positive pressure designed here is greater than 3 diameter of wafer, as a result, wafer 3
Bottom surface pad pasting 2 is connected on FRAME1, when gripping means grips FRAME1 is adjacent to the upper surface of main body 4, the just position of wafer 3
In in the opening of pressure chamber 6,3 bottom surface pad pasting 2 of wafer covers the annular groove of adsorbent equipment 5, wafer splitting dress mentioned herein
It sets and is suitable for 2 cun to 12 cun various sizes of wafers.
Of the invention presses on pressure chamber using gas, and air pressure will not touch wafer frontside during applying, especially
There are the MEMS such as micro-structure or surface to there is structures, the gas pressures such as more crisp coating circuit to be applied to backside of wafer on surface
Film layer.Also, pressure is uniform when gas presses, and pressure area is entire pressure chamber, and brilliant diameter of a circle is less than pressure chamber
Diameter, so whole wafer pressure area in, so that wafer is prolonged each Cutting Road while be cleaved into multiple crystalline substances
Grain, technique beat are fast.When pressure, gas is the soft chipping that contacts, will not generate to wafer generation because of chopper pressurization with wafer
The problems such as.The yield of wafer splitting is improved, technic index is improved, reduces chipping index.
It is emphasized that this wafer splitting device and method do not do limitation in any form, it is all according to this
The simple modification that the technical spirit of invention carries out, equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (9)
1. a kind of wafer splitting device, comprising:
One main body has clamping device in the main body, for wafer is fixed on the body；
Negative pressure system is used for the wafer adsorption in main body, and forms confined space；
Positive pressure system, the confined space for being formed to the wafer and the main body apply gas, make the wafer according to pre-
The Cutting Road being initially formed disconnects, and the wafer is carried out splitting and forms crystal grain.
2. wafer splitting device as described in claim 1, it is characterised in that: the wafer bottom surface has a film, the film and solid
The framework for determining wafer is connected, framework described in the gripping means grips, so that the wafer is fixed on the body.
3. wafer splitting device as described in claim 1, it is characterised in that: the negative pressure system includes adsorbent equipment and pumping
Mouthful, the adsorbent equipment is the slot for being formed in the body upper surface, and the slot is communicated with the bleeding point.
4. wafer splitting device as claimed in claim 3, it is characterised in that: the slot along the body surfaces annular spread,
To form confined space between the wafer and the body surfaces.
5. wafer splitting device as described in claim 1, it is characterised in that: the positive pressure system includes pressure chamber and inflation
Mouthful, the pressure chamber is formed in the inside of the adsorbent equipment, to form positive pressure space in the pressure chamber.
6. wafer splitting device as claimed in claim 5, it is characterised in that: the diameter of the pressure chamber is greater than the wafer
Diameter.
7. wafer splitting device as described in claim 1, it is characterised in that: the wafer cuts Cutting Road with table or inside is cut
It cuts.
8. a kind of wafer splitting method, specific steps include:
A, it by the wafer bottom surface pad pasting of well cutting, is connected in framework；
B, the wafer with film is placed in the main body of wafer splitting device, it, will be described by framework described in gripping means grips
Wafer is fixed on the body；
C, negative pressure system is opened, adsorbent equipment is evacuated, the film of wafer bottom surface is made to be close on the body, realize vacuum
Absorption；
D, positive pressure system is opened, the gas of setting pressure is poured from inflating port to pressure chamber moment, the gas pressure of generation is equal
With the back side for being distributed in the wafer；
E, it reduces negative pressure system and closes positive pressure system, when making to reach normal pressure in the pressure chamber, close negative pressure system, unclamp
Clamping device, wafer splitting are completed.
9. wafer splitting method as claimed in claim 8, it is characterised in that: the diameter of the pressure chamber is greater than the straight of wafer
Diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711221347.9A CN109849201A (en) | 2017-11-30 | 2017-11-30 | A kind of wafer splitting device and its method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711221347.9A CN109849201A (en) | 2017-11-30 | 2017-11-30 | A kind of wafer splitting device and its method |
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| CN109849201A true CN109849201A (en) | 2019-06-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020258865A1 (en) * | 2019-06-28 | 2020-12-30 | 长鑫存储技术有限公司 | Wafer and method for manufacturing same, and semiconductor device |
| CN112285514A (en) * | 2019-07-09 | 2021-01-29 | 致茂电子(苏州)有限公司 | Wafer testing device |
| CN114695258A (en) * | 2022-04-02 | 2022-07-01 | 北京北方华创微电子装备有限公司 | Wafer dividing method |
| CN117621279A (en) * | 2023-12-05 | 2024-03-01 | 江苏协鑫特种材料科技有限公司 | A slitting machine for semiconductor wafer processing |
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| CN101728296A (en) * | 2008-10-29 | 2010-06-09 | 沈阳芯源微电子设备有限公司 | Wafer-supporting platform |
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|---|---|---|---|---|
| US3809050A (en) * | 1971-01-13 | 1974-05-07 | Cogar Corp | Mounting block for semiconductor wafers |
| JPS54134564A (en) * | 1978-04-12 | 1979-10-19 | Hitachi Ltd | Wafer dividing unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020258865A1 (en) * | 2019-06-28 | 2020-12-30 | 长鑫存储技术有限公司 | Wafer and method for manufacturing same, and semiconductor device |
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| CN114695258A (en) * | 2022-04-02 | 2022-07-01 | 北京北方华创微电子装备有限公司 | Wafer dividing method |
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