CN109811403A - A kind of crystal pulling system and crystal pulling method - Google Patents
A kind of crystal pulling system and crystal pulling method Download PDFInfo
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- CN109811403A CN109811403A CN201711176669.6A CN201711176669A CN109811403A CN 109811403 A CN109811403 A CN 109811403A CN 201711176669 A CN201711176669 A CN 201711176669A CN 109811403 A CN109811403 A CN 109811403A
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- 235000012431 wafers Nutrition 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
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- 239000001301 oxygen Substances 0.000 description 7
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- 238000012806 monitoring device Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013501 data transformation Methods 0.000 description 1
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Abstract
The present invention provides a kind of crystal pulling system and crystal pulling methods.The system comprises: crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With horizontal magnetic field bringing device, the horizontal magnetic field bringing device includes the multiple loop coils being arranged on the outside of the crystal pulling chamber, the power of the multiple loop coil independently controls, so as to be applied to the distribution of horizontal magnetic intensity in vertical direction on the silicon melt adjustable for the horizontal magnetic field bringing device.Crystal pulling system and crystal pulling method according to the present invention, the distribution of the horizontal magnetic intensity being applied in crucible on silicon melt in vertical direction is adjusted during crystal pulling, rather than bushing position is adjusted, the horizontal magnetic intensity of silicon melt level remains constant in crucible during realization crystal pulling, it avoids and crucible is driven upside down, so as to avoid the crucible drive system when carrying out the crystal pulling of large scale crystal column using larger volume or power.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a crystal pulling system and a crystal pulling method.
Background
The czochralski method (hereinafter referred to as "CZ method") is the most widely used single crystal production method in the production of silicon wafers. The CZ method is a method in which a seed crystal is immersed in molten silicon in a quartz crucible and a single crystal is grown while pulling the seed crystal. The silicon wafer is formed by further slicing a column formed by the CZ method.
In order to improve the yield of semiconductor devices and to reduce the manufacturing cost of integrated circuit chips, the diameter of single crystal silicon wafers has been larger, which causes problems such as an increase in the concentration of single crystal oxygen, low stability of crystal growth, and low yield in the growth of single crystal silicon. A CZ method applying a horizontal magnetic field is adopted, specifically, a horizontal magnetic field with certain intensity is applied outside a crucible containing a molten monocrystalline silicon body, and the crucible is rotated and moves up and down in the direction of crystal growth simultaneously, so that the liquid level of the silicon melt in the crucible is kept at a constant magnetic field intensity for crystal pulling. However, in the case of larger crystal growth processes, such as 450mm single crystal silicon growth processes, larger crucible drive devices are required to move the crucible, which is difficult to overcome in the prior art.
Accordingly, there is a need for improvements in current crystal pulling systems and methods to eliminate the problems that exist today.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In response to the deficiencies of the prior art, the present invention provides a crystal pulling system comprising:
a crystal pulling chamber comprising a crucible storing a silicon melt; and
the power of the plurality of annular coils is independently controlled respectively, so that the distribution of the horizontal magnetic field intensity applied to the silicon melt by the horizontal magnetic field applying device in the vertical direction is adjustable.
Illustratively, the horizontal magnetic field applying device includes a top magnetic field coil, a middle magnetic field coil, and a bottom magnetic field coil; wherein,
the top magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region above the liquid level of the silicon melt;
the central magnetic field coil comprises the ring coil with an applied horizontal magnetic field distributed in a region from the liquid level of the silicon melt to the bottom of the crucible;
the bottom magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region below the bottom of the crucible.
Illustratively, the horizontal magnetic field applying means includes at least 10 of the loop coils.
Illustratively, the central magnetic field coil includes at least 6 of the toroidal coils.
Illustratively, the system further comprises a silicon melt level monitoring system disposed at the top of the crystal pulling chamber.
Illustratively, the silicon melt level monitoring system includes an optical sensor.
Illustratively, the system further comprises a horizontal magnetic field automatic control system for automatically controlling the horizontal magnetic field applying device.
Illustratively, the horizontal magnetic field automatic control system comprises:
the data acquisition module is used for acquiring process data in the crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data;
a data conversion module for converting the process data into computable standardized data;
and the machine learning control module is used for calculating according to the process data to obtain a control prediction result of the horizontal magnetic field applying device and automatically controlling the horizontal magnetic field applying device according to the control prediction result of the horizontal magnetic field applying device.
Illustratively, the horizontal magnetic field automatic control system controls the magnitude and/or sequence of the loading power of the loop coil.
The invention also provides a crystal pulling method, which is characterized in that the distribution of the horizontal magnetic field intensity applied to the silicon melt in the vertical direction is adjusted during the crystal pulling process so as to maintain the horizontal magnetic field intensity of the liquid level of the silicon melt constant.
Illustratively, the horizontal position of a crucible storing the silicon melt is maintained constant during crystal pulling.
Illustratively, the method of adjusting the distribution of the horizontal magnetic field strength exerted on the silicon melt in the vertical direction is implemented by controlling a horizontal magnetic field applying device that applies the horizontal magnetic field by a machine learning control model.
Illustratively, the process implemented by the machine learning control model comprises:
acquiring process data in a crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data;
converting the process data into computable standardised data;
calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model;
and controlling the horizontal magnetic field applying device according to the control prediction result of the horizontal magnetic field applying device.
According to the crystal pulling system and the crystal pulling method, the distribution of the horizontal magnetic field intensity applied to the silicon melt in the crucible in the vertical direction can be adjusted in the crystal pulling process, the position of the crucible is not adjusted, the horizontal magnetic field intensity of the liquid level of the silicon melt in the crucible is kept constant in the crystal pulling process, the crucible is prevented from being driven up and down, a crucible driving system with larger volume or power is prevented from being used in the crystal pulling of a large-size crystal column, and the volume of the crystal pulling system is reduced.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1 shows a schematic structural view of a crystal pulling system;
FIG. 2 shows a schematic of a crystal pulling system in accordance with one embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present invention, detailed steps will be set forth in the following description in order to explain the technical solutions proposed by the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
In order to increase the yield of semiconductor devices and to reduce the manufacturing cost of integrated circuit chips, the diameter of single crystal silicon wafers has been larger, which causes problems in growing single crystal silicon, such as an increase in the concentration of single crystal silicon oxygen, low stability of crystal growth, and low yield. One solution is to apply a horizontal magnetic field to the CZ method, specifically, to apply a horizontal magnetic field of a certain intensity to the outside of a crucible containing a molten monocrystalline silicon body, and simultaneously to rotate the crucible and move the crucible up and down in the direction of crystal growth, so as to ensure that the liquid level of the silicon melt in the crucible maintains a predetermined magnetic field intensity. Fig. 1 shows a schematic configuration of a crystal pulling system, wherein the crystal pulling system comprises a crystal pulling chamber 1, a crucible 2 and a heater 3 for heating the crucible 2 are arranged in the crystal pulling chamber 1, a crucible driving device 4 is arranged below the crucible 2 for driving the crucible 2 to rotate and move up and down in a vertical direction, and the crystal pulling system further comprises a horizontal magnetic field applying device 5 arranged outside the crystal pulling chamber for applying a horizontal magnetic field to a silicon melt located in the crucible 2. However, the intensity distribution in the vertical direction of the conventional magnetic field applying apparatus during pulling is kept constant, for example, the intensity gradually increases or decreases from the liquid level of the silicon melt to the bottom in the vertical direction but the intensity at the same level is kept constant, and at the same time, the rotation and up-and-down movement of the crucible 2 are controlled by the crucible driving apparatus 4 to ensure that the position of the liquid level of the silicon melt in the vertical direction is constant, thereby having a constant preset magnetic field intensity at the position of the liquid level of the silicon melt. In the process of growing crystals with larger sizes, such as 450mm monocrystalline silicon, a crucible driving device with larger size or power is needed to drive the crucible to move up and down, so that the problems of increase in the size of the crystal pulling equipment, increase in load and the like are caused.
To solve the problems in the prior art, the present invention provides a crystal pulling system comprising:
a crystal pulling chamber comprising a crucible storing a silicon melt; and
the horizontal magnetic field applying device comprises a plurality of annular coils arranged around the outer side of the crystal pulling chamber, and the power of the plurality of annular coils is independently controlled respectively, so that the distribution of the horizontal magnetic field intensity applied to the silicon melt by the horizontal magnetic field applying device in the vertical direction is adjustable.
According to the crystal pulling system and the crystal pulling method, the distribution of the horizontal magnetic field intensity applied to the silicon melt in the crucible in the vertical direction is adjusted in the crystal pulling process instead of adjusting the position of the crucible, so that the horizontal magnetic field intensity of the liquid level of the silicon melt in the crucible is kept constant in the crystal pulling process, the crucible is prevented from being driven up and down, a crucible driving system with larger volume or power is prevented from being used in the crystal pulling of a large-size crystal column, and the volume of the crystal pulling system is reduced.
Example one
To solve the problems in the prior art, the present embodiment provides a crystal pulling system suitable for use in larger diameter silicon wafer pulling processes, and particularly suitable for use in 450mm diameter silicon wafer pulling processes. Referring to FIG. 2, a schematic diagram of a crystal pulling system in accordance with one embodiment of the present invention is shown. The crystal pulling system comprises a crystal pulling chamber 21, a crucible 22 for storing silicon melt and a heater 23 for heating the crucible 22 are arranged in the crystal pulling chamber, a horizontal magnetic field applying device 25 is arranged outside the crystal pulling chamber 21 and used for applying a horizontal magnetic field to the silicon melt positioned in the crucible 22, and the silicon melt 26 is stored in the crucible 22. The horizontal magnetic field applying device comprises a plurality of annular coils arranged around the outer side of the crystal pulling chamber, and the power of the plurality of annular coils is independently controlled respectively, so that the distribution of the horizontal magnetic field intensity applied to the silicon melt by the horizontal magnetic field applying device in the vertical direction is adjustable. The plurality of annular coils are arranged, and each annular coil is controlled by the independent power supply to generate the horizontal magnetic field, so that the magnetic field intensity of the horizontal magnetic field applied to the silicon melt in the crystal pulling process is adjustable in the vertical direction, namely the magnetic field intensity of the silicon melt liquid level in the crucible is kept constant under the condition that the crucible position is not required to be adjusted to maintain the silicon melt liquid level constant in the crystal pulling process, the crucible is prevented from being driven up and down, and when large-size crystal column crystal pulling is carried out, a crucible driving system using larger volume or power is reduced, so that the volume of a crystal pulling system is reduced.
With continued reference to FIG. 2, a crucible drive 24 is provided below the crucible 22 for driving the crucible 22 in rotation. The crucible is kept rotating during the crystal pulling process in order to reduce the thermal asymmetry of the silicon melt and to grow the silicon crystal pillars with equal diameters. The crystal pulling system further comprises seed crystals, pulling wires, a pulling wire motor 28, an argon gas plate, an insulating material layer arranged outside the heater and other configurations in the prior art, which are not all shown in fig. 2, and can be selected by a person skilled in the art as required, and the details are not repeated herein.
Illustratively, the horizontal magnetic field applying device includes a top magnetic field coil, a middle magnetic field coil, and a bottom magnetic field coil; wherein the top magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region above the liquid level of the silicon melt; the central magnetic field coil comprises the ring coil with an applied horizontal magnetic field distributed in a region from the liquid level of the silicon melt to the bottom of the crucible; the bottom magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region below the bottom of the crucible. Thereby forming a horizontal magnetic field comprising the whole silicon melt, and forming a wide adjustable range of the magnetic field during the crystal pulling process, wherein the formed adjustable region of the magnetic field center is positioned between the liquid level of the silicon melt and the bottom of the crucible. As shown in fig. 2, horizontal magnetic field applying device 25 includes top magnetic field coil 251, middle magnetic field coil 252, and bottom magnetic field coil 253, wherein the magnetic field applied by top magnetic field coil 251 is located in a region above liquid level 26a of silicon melt 26, the magnetic field applied by middle magnetic field coil 252 is located in a region below liquid level 26a of silicon melt 26 to above bottom 22b of crucible 22, and the magnetic field applied by bottom magnetic field coil 253 is located in a region below bottom 22b of crucible 22.
Illustratively, the horizontal magnetic field applying means includes at least 10 of the loop coils. In an exemplary embodiment, the middle magnetic field coil at least comprises 6 toroidal coils, the arrangement at least comprises 6 magnetic field toroidal coils, in the crystal pulling process, along with the proceeding of the crystal pulling process, under the condition that the position of the crucible is kept unchanged in the vertical direction, the liquid level of the silicon melt in the crucible is gradually lowered, the arrangement of at least 6 magnetic field toroidal coils can control the intensity of a magnetic field distributed from the liquid level of the silicon melt to the bottom of the crucible in the vertical direction through at least 6 magnetic field toroidal coils, and further accurately control the magnetic field intensity of the liquid level of the silicon melt in the crystal pulling process. As shown in fig. 2, the top magnetic field coil 251 includes 2 toroidal coils, the middle magnetic field coil 252 includes 6 toroidal coils, and the bottom magnetic field coil 253 includes 2 toroidal coils.
Illustratively, the top magnetic field coil comprises at least 2 toroidal coils, i.e. the distribution of the horizontal magnetic field strength in the vertical direction above the liquid level of the silicon melt is further precisely controlled by at least 2 toroidal coils. Illustratively, the bottom magnetic field coil comprises at least 2 toroidal coils, i.e. the distribution of the horizontal magnetic field strength below the bottom of the crucible in the vertical direction is further precisely controlled by at least 2 toroidal coils.
It is to be understood that the arrangement of the top, middle and bottom magnetic field coils is merely exemplary and that any number of toroidal coils that achieve a horizontal magnetic field applied to the silicon melt with a vertically adjustable distribution of magnetic field strength may be suitable for use in the present invention. It should also be understood that the plurality of toroidal coils may have the same coil parameters such as coil density and diameter, or may have different coil parameters, and those skilled in the art may set the coil parameters as needed.
Illustratively, the system further comprises a silicon melt surface monitoring device located at the top of the crystal pulling chamber. The monitoring device is used for monitoring the liquid level state of the silicon melt. Illustratively, the monitoring device is provided as an optical sensor for monitoring the liquid level position of the silicon melt, and the magnetic field applying device is adjusted according to the liquid level position of the silicon melt. As shown in fig. 2, an optical sensor 27 is disposed at the top of the crystal pulling chamber 21.
Illustratively, the system further comprises a horizontal magnetic field automatic control system for automatically controlling the horizontal magnetic field applying device. The automatic control system for the horizontal magnetic field comprises: the data acquisition module is used for acquiring process data in the crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data; a data conversion module for converting the process data into computable standardized data; and the machine learning control module is used for calculating according to the process data to obtain a control prediction result of the horizontal magnetic field applying device and automatically controlling the horizontal magnetic field applying device according to the control prediction result of the horizontal magnetic field applying device. The horizontal magnetic field automatic control system adopts process data obtained in a crystal pulling process, generates prediction data through a machine learning control model, and controls the coil loading quantity, the loading power and the like of the horizontal magnetic field applying device through the prediction data.
In an exemplary embodiment, the process of controlling the horizontal magnetic field applying device by the learning control model includes: acquiring process data in a crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data; converting the process data into computable standardised data; calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model; the horizontal magnetic field applying device is controlled according to the prediction result of the horizontal magnetic field applying device.
Illustratively, the equipment parameter data includes the number of individual coils in the horizontal magnetic field applying device during the crystal pulling process, power data and time data in each individual coil, and pulling time control data, etc. Illustratively, the product performance data includes silicon wafer size, oxygen concentration profile in the wafer (including oxygen concentration profile in the vertical and radial directions in the silicon column), grown-in defect profile, resistivity profile, and the like. And performing data conversion on the obtained process data to obtain computable standardized data, and calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model. The data conversion and the method for calculating the control prediction result of the horizontal magnetic field applying device by using the neural network may adopt methods commonly used by those skilled in the art, and will not be described herein. And finally, automatically controlling the horizontal magnetic field applying device according to the calculated control prediction result of the horizontal magnetic field applying device. Illustratively, the horizontal magnetic field applying device control prediction result includes a prediction result of an apparatus parameter of the horizontal magnetic field applying device. Controlling the horizontal magnetic field applying means by controlling the prediction result by the horizontal magnetic field applying means includes controlling the magnitude and/or the order of the loading power of the loop coil.
It should be understood that the description of the control manner of the horizontal magnetic field automatic control system by taking the neural network method as an example of the machine learning model in the present embodiment is only exemplary, and other machine learning models, such as statistical learning based on a vector machine, deep learning, and the like, are all applicable to the present invention.
Example two
The invention also provides a crystal pulling method using the crystal pulling system of embodiment one, wherein the distribution of the horizontal magnetic field strength applied to the silicon melt in the vertical direction is adjusted during the crystal pulling process. The distribution of the horizontal magnetic field intensity applied to the silicon melt in the crucible in the vertical direction is adjusted in the crystal pulling process instead of adjusting the position of the crucible, so that the horizontal magnetic field intensity of the liquid level of the silicon melt in the crucible is kept constant in the crystal pulling process, the crucible is prevented from being driven up and down, and when a large-size crystal column is pulled, a crucible driving system with larger volume or power is reduced, so that the volume of a crystal pulling system is reduced.
Illustratively, the pulling process comprises: doping and melting a polycrystalline silicon raw material, and loading a horizontal magnetic field; heating and stabilizing the silicon melt; a seed crystal and melt contact process; room, pulling, isometric control, and ending processes, which may be the same process as, or a similar variation of, the prior art crystal pulling process, are not described in detail herein. The following is merely an exemplary description of the pulling process.
Illustratively, maintaining a constant horizontal position of a crucible storing the silicon melt during the crystal pulling process maintains the stability of the silicon melt during the crystal pulling process. Referring to fig. 2, in a crystal pulling chamber 21, a polycrystalline silicon ingot as a raw material is placed in a crucible 22, and the crucible is heated by a heater 23 set at a predetermined temperature to melt the polycrystalline silicon ingot to form a silicon melt 26 as shown in fig. 2. The seed crystal is driven to be immersed in silicon melt 26 and the pulling wire motor 28 is driven to pull the seed crystal at a speed, the seed crystal is pulled up out of the single crystal column 20 under the pulling of the pulling wire, during which the liquid level of the silicon melt 26 is lowered as the liquid level height proceeds during the pulling, while the horizontal magnetic field applying means 25 is adjusted so that the magnetic field strength at the liquid level position is kept constant during the lowering of the liquid level, and during which the crucible position is kept constant. Through this pulling process, a single crystal silicon ingot is formed.
Illustratively, the distribution of the horizontal magnetic field strength exerted on the silicon melt in the vertical direction during the crystal pulling process is automatically controlled. Illustratively, the distribution of the horizontal magnetic field strength in the vertical direction applied to the silicon melt is automatically controlled by a machine learning control model. In an exemplary embodiment, the process of controlling the horizontal magnetic field applying device by the learning control model includes: acquiring process data in a crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data; converting the process data into computable standardised data; calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model; the horizontal magnetic field applying device is controlled according to the prediction result of the horizontal magnetic field applying device.
Illustratively, the equipment parameter data includes the number of individual coils in the horizontal magnetic field applying device during the crystal pulling process, power data and time data in each individual coil, and pulling time control data, etc. Illustratively, the product performance data includes silicon wafer size, oxygen concentration profile in the wafer (including oxygen concentration profile in the vertical and radial directions in the silicon column), grown-in defect profile, resistivity profile, and the like. And performing data conversion on the obtained process data to obtain computable standardized data, and calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model. The data conversion and the method for calculating the control prediction result of the horizontal magnetic field applying device by using the neural network may adopt methods commonly used by those skilled in the art, and will not be described herein. And finally, automatically controlling the horizontal magnetic field applying device according to the calculated control prediction result of the horizontal magnetic field applying device. Illustratively, the horizontal magnetic field applying device control prediction result includes a prediction result of an apparatus parameter of the horizontal magnetic field applying device. Controlling the horizontal magnetic field applying means by controlling the prediction result by the horizontal magnetic field applying means includes controlling the magnitude and/or the order of the loading power of the loop coil. The horizontal magnetic field automatic control system adopts process data obtained in a crystal pulling process, generates prediction data through a learning control model, and controls the coil loading quantity, the loading current and the like of the horizontal magnetic field applying device through the prediction data.
Illustratively, the equipment parameter data includes the number of individual coils in the horizontal magnetic field applying device during the crystal pulling process, power data and time data in each individual coil, and pulling time control data, etc. Illustratively, the product performance data includes silicon wafer size, oxygen concentration profile in the wafer (including oxygen concentration profile in the vertical and radial directions in the silicon column), grown-in defect profile, resistivity profile, and the like. And performing data conversion on the obtained process data to obtain computable standardized data, and calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model. The data transformation and the method for calculating the control prediction result of the horizontal magnetic field applying device by using the neural network are well known to those skilled in the art and will not be described herein.
In summary, according to the crystal pulling system and the crystal pulling method provided by the invention, the distribution of the horizontal magnetic field intensity applied to the silicon melt in the crucible in the vertical direction is adjusted in the crystal pulling process, rather than the position of the crucible is adjusted, so that the horizontal magnetic field intensity of the liquid level of the silicon melt in the crucible is kept constant in the crystal pulling process, the crucible is prevented from being driven up and down, and a crucible driving system with larger volume or power is prevented from being used in the crystal pulling process of a large-size crystal column, and the volume of the crystal pulling system is reduced.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (13)
1. A crystal pulling system, comprising:
a crystal pulling chamber comprising a crucible storing a silicon melt; and
the power of the plurality of annular coils is independently controlled respectively, so that the distribution of the horizontal magnetic field intensity applied to the silicon melt by the horizontal magnetic field applying device in the vertical direction is adjustable.
2. The system of claim 1, wherein the horizontal magnetic field applying means comprises a top magnetic field coil, a middle magnetic field coil, and a bottom magnetic field coil; wherein,
the top magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region above the liquid level of the silicon melt;
the central magnetic field coil comprises the ring coil with an applied horizontal magnetic field distributed in a region from the liquid level of the silicon melt to the bottom of the crucible;
the bottom magnetic field coil comprises the toroidal coil with an applied horizontal magnetic field distributed in a region below the bottom of the crucible.
3. The system according to claim 2, wherein the horizontal magnetic field applying means includes at least 10 of the loop coils.
4. The system of claim 2, wherein the central magnetic field coil comprises at least 6 of the toroidal coils.
5. The system of claim 1 further comprising a silicon melt level monitoring system disposed at a top of the crystal pulling chamber.
6. The system of claim 5, wherein the silicon melt level monitoring system comprises an optical sensor.
7. The system of claim 1, further comprising a horizontal magnetic field automatic control system for automatically controlling the horizontal magnetic field applying device.
8. The system of claim 7, wherein the horizontal magnetic field automatic control system comprises:
the data acquisition module is used for acquiring process data in the crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data;
a data conversion module for converting the process data into computable standardized data;
and the machine learning control module is used for calculating according to the process data to obtain a control prediction result of the horizontal magnetic field applying device and automatically controlling the horizontal magnetic field applying device according to the control prediction result of the horizontal magnetic field applying device.
9. The system of claim 8, wherein the horizontal magnetic field automatic control system controls the magnitude and/or sequence of the loading power of the toroidal coil.
10. A crystal pulling method is characterized in that the distribution of the horizontal magnetic field strength exerted on a silicon melt in the vertical direction is adjusted during the crystal pulling process to maintain the horizontal magnetic field strength of the liquid level of the silicon melt constant.
11. The method of claim 10, wherein a horizontal position of a crucible storing the silicon melt is maintained constant during crystal pulling.
12. A method as set forth in claim 10 wherein the method of adjusting the distribution in the vertical direction of the horizontal magnetic field strength imparted to the silicon melt is carried out by a machine learning control model controlling a horizontal magnetic field applying device that applies the horizontal magnetic field.
13. The method of claim 12, wherein the process implemented by the machine learning control model comprises:
acquiring process data in a crystal pulling process, wherein the process data comprises equipment parameter data and product performance data corresponding to the equipment parameter data;
converting the process data into computable standardised data;
calculating a control prediction result of the horizontal magnetic field applying device according to the standardized data by adopting a neural network prediction model;
and controlling the horizontal magnetic field applying device according to the control prediction result of the horizontal magnetic field applying device.
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