CN109818601A - A kind of negative level selection circuit suitable for depletion type switch - Google Patents
A kind of negative level selection circuit suitable for depletion type switch Download PDFInfo
- Publication number
- CN109818601A CN109818601A CN201910020526.9A CN201910020526A CN109818601A CN 109818601 A CN109818601 A CN 109818601A CN 201910020526 A CN201910020526 A CN 201910020526A CN 109818601 A CN109818601 A CN 109818601A
- Authority
- CN
- China
- Prior art keywords
- switch
- nmos switch
- charge pump
- negative pressure
- pressure charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Abstract
The present invention discloses a kind of negative level selection circuit suitable for depletion type switch, including the first NMOS switch, second NMOS switch, first negative pressure charge pump and the second negative pressure charge pump, first negative pressure charge pump is connected to the drain electrode of the first NMOS switch, second negative pressure charge pump is connected to the grid of the second NMOS switch, and the grid of the first NMOS switch is connected to the drain electrode of the second NMOS switch, and the source electrode of the first NMOS switch and the second NMOS switch is exported to OUT.The present invention solves negative voltage transmission problem, hence it is evident that improves the isolation of depletion type (depletion) switch in a turn-off case.
Description
Technical field
The present invention relates to depletion type (depletion) ON-OFF control circuits, are a kind of suitable for depletion type more specifically
(depletion) the negative level selection circuit switched, is mainly used for negative level selection circuit, is negative in a level and presses charge pump
Negative voltage is chosen in the case where output, can be used for depletion type (depletion) switch control.
Background technique
Depletion type (Depletion) switch can be used for transmitting signal in the case where power remove, exhaust in the case of this
Grid grade, source level, the drain of type (Depletion) switch are identical voltage, can transmit signal with high-quality.It is normally supplied in power supply
When electric, then it can be the grid grade for the negative level control switch that negative pressure charge pump generates by switch OFF, employing mode, make grid
Step voltage is lower than applied signal voltage (source of depletion type switch or leakage), so that the cut-off of depletion type switch channel is opened to shutdown
It closes.In practical control circuit, need the selection one from the negative voltage that the input signal of switch is generated with charge pump lower
Level is used for circuit control.
The cross-coupling type mode that existing negative voltage selection circuit uses, as shown in Figure 1, being opened by a charge pump and NMOS
1 and the composition of NMOS switch 2 are closed, V2 voltage is higher than negative pressure charge pump voltage V1, and the grid grade Gate2 of NMOS switch 2 is negative voltage,
NMOS switch 2 will be off, and the grid grade Gate1 voltage of NMOS switch 1 is V2, and voltage is high, and NMOS switch 1 will be connected, thus
Make negative voltage V1 that can export OUT for delivery to the source source of NMOS1 and NMOS2.
But the method, the disadvantage is that the fluctuation of negative pressure charge pump causes NMOS switch 2 to be not completely off, high voltage V2 is passed to
The end source of NMOS switch 2, then V1 is lived by the channel of NMOS switch 1 or parasitic PN junction clamper, lead to negative pressure charge pump
Output voltage cannot drop to target value, but be in a high level being clamped, and can not close NMOS switch 2, this shape
State will be sustained, so that negative voltage can not choose, the gate voltage of final depletion type switch is not low enough, can not be thorough
Shutdown switch, so that the isolation of depletion type switch is poor when signal amplitude is bigger.
Summary of the invention
In view of this, the present invention proposes a kind of negative level selection circuit for being suitable for depletion type (depletion) switch, use
In solving negative voltage transmission problem, the isolation of depletion type (depletion) switch in a turn-off case is improved.
The present invention can be achieved by the following technical programs:
A kind of negative level selection circuit suitable for depletion type switch, including the first NMOS switch, the second NMOS switch, the
One negative pressure charge pump and the second negative pressure charge pump, the first negative pressure charge pump are connected to the drain electrode of first NMOS switch,
The second negative pressure charge pump is connected to the grid of second NMOS switch, and the grid of first NMOS switch is connected to
The source electrode of the drain electrode of second NMOS switch, first NMOS switch and the second NMOS switch is exported to OUT.
Beneficial effect
Compared with prior art, a negative pressure charge pump is newly added in the present invention, by the grid grade of the second NMOS switch and the
The drain electrode of one NMOS switch separates.The advantage is that: since the drain electrode of the grid grade and the first NMOS switch of the second NMOS switch is
Independent two signals, the output voltage of the second negative pressure charge pump i.e. grid grade of the second NMOS switch will not be clamped by high level signal
Position is lived, and the second NMOS switch can be completely turned off, prevent high level signal is from being transmitted to the first NMOS switch and the 2nd NMOS
The source of switch, thus can not clamper live the drain terminal i.e. output of the first negative pressure charge pump of the first NMOS switch.By above-mentioned
Mode can fully achieve negative level signal behavior.
Detailed description of the invention
Fig. 1 is prior art circuits figure
Fig. 2 is circuit diagram of the present invention
Fig. 3 is existing scheme simulation result diagram
Fig. 4 is the present invention program simulation result diagram
Specific embodiment
Illustrate embodiments of the present invention below by way of particular specific embodiment, those skilled in the art can be by this theory
The bright revealed content of book is understood other advantages and efficacy of the present invention easily.
As shown in Fig. 2, a kind of negative level selection circuit suitable for depletion type switch of the invention, including the first NMOS are opened
It closes (NMOS1), the second NMOS switch (NMOS2), the first negative pressure charge pump 1 and the second negative pressure charge pump 2, the first negative pressure charge pump
1 is connected to the drain electrode (Drain1) of the first NMOS switch (NMOS1), and the second negative pressure charge pump 2 is connected to the second NMOS switch
(NMOS2) grid (Gate2), and the grid (Gate1) of the first NMOS switch (NMOS1) is connected to the second NMOS switch
(NMOS2) source electrode (Souce1) of drain electrode (Drain2), the first NMOS switch (NMOS1) and the second NMOS switch (NMOS2)
(Souce2) it exports to OUT.
The invention is realized in this way by generating two negative pressure charge pumps, it will be in cross-coupling type negative pressure selection circuit
High voltage eliminates the clamping action of negative voltage, to realize good negative pressure selection.Negative pressure charge pump 2 is connected to second
The grid grade of NMOS switch, negative pressure charge pump 1 are connected to the drain electrode of the first NMOS switch, even if the wave of 2 voltage V3 of negative pressure charge pump
It is dynamic that the second NMOS switch is caused to be connected, and then clamper lives the output (V1) of negative pressure charge pump 1, but lives negative pressure charge pump without clamper
2 output (V3) still can close the 2nd NMOS and open once the output of negative pressure charge pump 2 is normal (normal negative value)
It closes, the clamper that cutting high level signal V2 exports negative pressure charge pump 1, so that the output of negative pressure charge pump 1 also returns to normally
Negative value is finally exported the normal negative pressure value of negative pressure charge pump 1 to OUT by the first NMOS switch 1.
Existing scheme and the present invention program simulation result are shown in Fig. 3 and Fig. 4, target output -2.5V, and existing scheme output is clamped
Position improves obvious in -1.6V, the present invention program output -2.4V.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (1)
1. a kind of negative level selection circuit suitable for depletion type switch, it is characterised in that: including the first NMOS switch, second
NMOS switch, the first negative pressure charge pump and the second negative pressure charge pump, the first negative pressure charge pump are connected to the first NMOS
The drain electrode of switch, the second negative pressure charge pump are connected to the grid of second NMOS switch, and first NMOS switch
Grid be connected to the drain electrode of second NMOS switch, the source electrode of first NMOS switch and the second NMOS switch export to
OUT。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910020526.9A CN109818601B (en) | 2019-01-09 | 2019-01-09 | Negative level selection circuit suitable for depletion type switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910020526.9A CN109818601B (en) | 2019-01-09 | 2019-01-09 | Negative level selection circuit suitable for depletion type switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109818601A true CN109818601A (en) | 2019-05-28 |
| CN109818601B CN109818601B (en) | 2024-07-09 |
Family
ID=66604090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910020526.9A Active CN109818601B (en) | 2019-01-09 | 2019-01-09 | Negative level selection circuit suitable for depletion type switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109818601B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110043140A1 (en) * | 2009-08-24 | 2011-02-24 | Green Solution Technology Co., Ltd. | Charge pump circuit with current detecting and method thereof |
| US8456225B1 (en) * | 2011-12-27 | 2013-06-04 | Fairchild Semiconductor Corporation | Negative charge pump |
| CN105929885A (en) * | 2016-06-15 | 2016-09-07 | 深圳市飞仙智能科技有限公司 | Negative pressure generating circuit and integrated chip |
-
2019
- 2019-01-09 CN CN201910020526.9A patent/CN109818601B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110043140A1 (en) * | 2009-08-24 | 2011-02-24 | Green Solution Technology Co., Ltd. | Charge pump circuit with current detecting and method thereof |
| US8456225B1 (en) * | 2011-12-27 | 2013-06-04 | Fairchild Semiconductor Corporation | Negative charge pump |
| CN203151371U (en) * | 2011-12-27 | 2013-08-21 | 快捷半导体(苏州)有限公司 | Negative charge pump circuit |
| CN105929885A (en) * | 2016-06-15 | 2016-09-07 | 深圳市飞仙智能科技有限公司 | Negative pressure generating circuit and integrated chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109818601B (en) | 2024-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103312309B (en) | Analog switch control circuit structure | |
| CN101882860B (en) | Insulated gate bipolar translator (IGBT) drive and protection circuit | |
| US10340906B2 (en) | Integrated bootstrap high-voltage driver chip and technological structure thereof | |
| CN203278779U (en) | Drive circuit of switching element | |
| CN101795132B (en) | Potential pull-up circuit and pull-down circuit of I/O port of integrated circuit | |
| CN107846138A (en) | A kind of advanced active clamp circuit of insulated gate bipolar transistor | |
| CN205725694U (en) | Negative pressure power tube bias sequence switch control circuit | |
| CN103166616A (en) | Simulative switch circuit structure | |
| CN109714020A (en) | For controlling the circuit of numerical-control attenuator overshoot | |
| CN108964425B (en) | GaN chip negative pressure control circuit and equipment | |
| CN101272138B (en) | Analog switch chip design method and chip device | |
| CN104883172A (en) | Analog switch circuit structure | |
| CN106330172B (en) | The transmission gate of high voltage threshold device and its subsequent pull-down circuit structure | |
| CN202652172U (en) | Analog switch circuit structure | |
| CN110232040A (en) | Analog switch and electronic equipment | |
| CN103326315A (en) | Under-voltage protection circuit and high-voltage integrated circuit | |
| CN203193589U (en) | Power source control circuit and electronic product with slow-start control | |
| CN109818601A (en) | A kind of negative level selection circuit suitable for depletion type switch | |
| CN103023470B (en) | Three electrode one-way conduction field effect transistor | |
| CN101494450B (en) | Level transfer circuit | |
| CN101594136A (en) | Current-mode level transforming circuit in the N channel power MOS pipe driving chip | |
| CN102332900A (en) | a solid state relay | |
| CN207070035U (en) | The drain modulation circuit of GaN high electron mobility transistor | |
| CN109921615A (en) | Instantaneous negative pressure switch-off power metal-oxide-semiconductor driving circuit and driving method | |
| CN210111842U (en) | Switch control circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| CB02 | Change of applicant information |
Address after: 6 / F, building 8, Zilang science and Technology City, Nantong innovation District, 60 Chongzhou Avenue, Nantong City, Jiangsu Province, 226017 Applicant after: Jiangsu Dior Microelectronics Co.,Ltd. Address before: 226017 No. 16 Wei14 Road, Sutong Science and Technology Industrial Park, Nantong City, Jiangsu Province Applicant before: DIOO MICROCIRCUITS Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |