CN109814648A - A kind of linear voltage regulator and linear voltage stabilization method suitable for hyperbaric environment - Google Patents
A kind of linear voltage regulator and linear voltage stabilization method suitable for hyperbaric environment Download PDFInfo
- Publication number
- CN109814648A CN109814648A CN201811614877.4A CN201811614877A CN109814648A CN 109814648 A CN109814648 A CN 109814648A CN 201811614877 A CN201811614877 A CN 201811614877A CN 109814648 A CN109814648 A CN 109814648A
- Authority
- CN
- China
- Prior art keywords
- high pressure
- amplifier
- low
- output voltage
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000006641 stabilisation Effects 0.000 title claims abstract description 7
- 238000011105 stabilization Methods 0.000 title claims abstract description 7
- 238000005070 sampling Methods 0.000 claims abstract description 3
- 230000005611 electricity Effects 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 description 4
- VNFVKWMKVDOSKT-LREBCSMRSA-N (2r,3r)-2,3-dihydroxybutanedioic acid;piperazine Chemical compound C1CNCCN1.OC(=O)[C@H](O)[C@@H](O)C(O)=O VNFVKWMKVDOSKT-LREBCSMRSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
In order to solve the technical issues of traditional low pressure difference linear voltage regulator is not suitable for hyperbaric environment, the present invention provides a kind of linear voltage regulators suitable for hyperbaric environment and linear voltage stabilization method.Linear voltage regulator includes low-pressure region amplifier, high pressure domain common-source amplifier and power stage;Power stage includes power tube and the first load;Power tube uses high pressure NMOS pipe MN4;First load uses feedback resistance;Obtained feedback voltage Vfb is sent into the positive input terminal of low-pressure region amplifier for sampling to the output voltage Vout of high pressure MN4 by feedback resistance;Low-pressure region amplifier generates output voltage vout1, and be sent into high pressure domain common-source amplifier for Vfb to be compared with reference voltage Vref;High pressure domain common-source amplifier generates output voltage vout2 according to vout1;Output voltage vout2 is used to control the grid of high pressure NMOS pipe MN4, generates output voltage Vout.First order low-pressure region amplifier and second level high pressure domain common-source amplifier, can substitute the high pressure domain amplifier in traditional structure completely in the present invention, and implement and be easy very much.
Description
Technical field
The present invention relates to a kind of linear voltage regulators suitable for hyperbaric environment and linear voltage stabilization method.
Background technique
In FLASH, the high pressure for needing to be exported using linear voltage regulator from charge pump is generated one and is higher than external power supply electricity
The medium voltage of pressure, for example 4V is generated from 16V.Traditional low pressure difference linear voltage regulator is by amplifier, PMOS power tube and feedback electricity
Resistance is constituted, as shown in Figure 1.But in FLASH technique, the reliability of high voltage PMOS pipe is poor, and drain-source breakdown voltage is less than
8V (BVDS < 8V), and the amplifier of high-voltage electricity source domain is difficult to realize.Therefore, traditional low pressure difference linear voltage regulator is not appropriate for height
Application under pressure ring border.
Summary of the invention
In order to solve the technical issues of traditional low pressure difference linear voltage regulator is not suitable for hyperbaric environment, the present invention provides
A kind of linear voltage regulator and linear voltage stabilization method suitable for hyperbaric environment.
The technical solution of the invention is as follows:
A kind of linear voltage regulator suitable for hyperbaric environment is characterized in that total including low-pressure region amplifier, high pressure domain
Source amplifier and power stage;
Power stage includes power tube and the first load;The power tube uses high pressure NMOS pipe MN4;First load is adopted
Use feedback resistance;The feedback resistance is for sampling the output voltage Vout of the high pressure NMOS pipe MN4, by what is obtained
Feedback voltage Vfb is sent into the positive input terminal of the low-pressure region amplifier;
The low-pressure region amplifier generates output electricity for the feedback voltage Vfb to be compared with reference voltage Vref
Vout1 is pressed, and is sent into high pressure domain common-source amplifier;
High pressure domain common-source amplifier generates output voltage vout2 according to the vout1;The output voltage vout2
For controlling the grid of the high pressure NMOS pipe MN4, the output voltage Vout is generated.
Further, high pressure domain common-source amplifier includes amplifier tube and the second load;The amplifier tube uses high pressure
NMOS tube;Second load is using the multistage high voltage PMOS current mirror stacked.
Further, high pressure domain common-source amplifier includes amplifier tube, third load and high pressure negative threshold value NMOS tube
MN6;The amplifier tube MN3 uses low pressure NMOS tube;Third load is using the multistage high voltage PMOS current mirror stacked;The negative threshold of high pressure
It is worth pipe MN6 to be arranged between low pressure NMOS tube MN3 and high voltage PMOS current mirror.
It further, further include low pressure biasing circuit, low pressure biasing circuit is used to provide bias current for linear voltage regulator.
Further, the high voltage PMOS current mirror includes first order current mirror, second level current mirror and third level electric current
Mirror;First order current mirror is made of PMOS tube MP1, MP2, and second level current mirror is made of PMOS tube MP3, MP4, third level electric current
Mirror is made of PMOS tube MP7, MP8;The grid end of MP1 connects the drain terminal of its own and connects with the source of the grid end of MP2 and MP3,
The source of MP1 and MP2 meets high voltage power supply Vh, and the drain terminal of MP2 connects the source of MP4, the grid end of MP3 connect the drain terminal of its own and and
The grid end of MP4 and the source of MP7 connect, and the drain terminal of MP4 connects the source of MP8, the grid end of MP7 connect the drain terminal of its own and and
The drain terminal of the 104 mesohigh negative threshold value pipe MN5 of grid end and low pressure biasing circuit of MP8 connects, the drain terminal of MP8 and the drain terminal of MN6
Connect with the grid end of MN4.
The present invention also provides a kind of linear voltage stabilization method based on the above-mentioned linear voltage regulator suitable for hyperbaric environment,
It is characterized in that, comprising steps of
1) it is sampled using output voltage Vout of the feedback resistance to high pressure NMOS pipe MN4, obtains feedback voltage Vfb;
2) feedback voltage Vfb is compared with reference voltage Vref using low-pressure region amplifier, if feedback voltage Vfb is greater than
Reference voltage Vref, then the output voltage vout1 of low-pressure region amplifier is increased, thus the output voltage of high pressure domain common-source amplifier
Vout2 is reduced;If feedback voltage Vfb is less than reference voltage Vref, the output voltage vout1 of low-pressure region amplifier is reduced, thus
The output voltage vout2 of high pressure domain common-source amplifier is increased;
3) using the grid end of output voltage vout2 control high pressure NMOS pipe MN4, the output voltage Vout is adjusted.
Beneficial effects of the present invention:
1, realize that difficult problem, the present invention use tertiary structure for high pressure domain amplifier, wherein first and second grade, i.e., the
Level-one low-pressure region amplifier, second level high pressure domain common-source amplifier, so that it may the high pressure domain amplifier in traditional structure is substituted completely, and
And it implements and is easy very much.
2, high voltage PMOS pipe drain-source breakdown voltage it is low without being suitable for power tube aiming at the problem that, the present invention use high pressure
NMOS is as power tube, to improve the high-voltage applications range of the linear voltage regulator.The conventionally employed high voltage PMOS pipe rate of doing work
The application range of the linear voltage regulator of pipe is up to 10V or so, and the application range of linear voltage regulator of the invention can be extended to
30V。
Detailed description of the invention
Fig. 1 is traditional low pressure difference linear voltage regulator schematic illustration.
Fig. 2 is the functional block diagram of linear voltage regulator of the present invention.
Fig. 3 is the structural schematic diagram of linear voltage regulator embodiment of the present invention, in figure, 101- low-pressure region amplifier, and 102- high pressure
Domain common-source amplifier, 103- power stage, 104- low pressure biasing circuit.
Specific embodiment
Below in conjunction with attached drawing, the invention will be further described.
As shown in Fig. 2, linear voltage regulator provided by the present invention, using tertiary structure:
The first order uses low-pressure region amplifier.
The second level uses high pressure domain common-source amplifier:
The amplifier tube of common-source amplifier can be high pressure NMOS pipe, be also possible to low pressure NMOS tube, load is high pressure
PMOS current mirror.Amplifier tube is that circuit is simple using the benefit of high pressure NMOS pipe, the disadvantage is that its mutual conductance is smaller, gain is small;Using
The benefit of low pressure NMOS tube is that its mutual conductance is larger, and gain is big, but the disadvantage is that needs high_voltage isolation.High voltage PMOS current mirror uses heap
To solve the problems, such as that high voltage PMOS drain-source may be breakdown, the number of plies stacked can change mode repeatedly according to the difference of high voltage power supply
Become.
The third level is power stage, and using high pressure NMOS pipe rate of doing work pipe, feedback resistance is loaded.The drain-source electricity of high pressure NMOS
The problem of pressing up to 30V or more, reliability be not present.
Embodiment:
As shown in figure 3, the linear voltage regulator of the present embodiment include low-pressure region amplifier 101, high pressure domain common-source amplifier 102,
Power stage 103 and for providing the low pressure biasing circuit 104 of bias current for linear voltage regulator.
High pressure domain common-source amplifier 102 includes amplifier tube, high pressure negative threshold value NMOS tube MN6 and high voltage PMOS current mirror;It puts
Big pipe MN3 uses low pressure NMOS tube;The grid end of MN3 connects the output end of low-pressure region amplifier 101, the leakage terminated high voltage negative threshold value of MN3
The source of NMOS tube MN6, the source ground connection of MN3;The drain terminal of high pressure negative threshold value NMOS tube MN6 connects the output of high voltage PMOS current mirror
End, the grid end of high pressure negative threshold value NMOS tube MN6 meet vext;The effect of high pressure negative threshold value NMOS tube MN6 is isolation high pressure, so as not to it is low
NMOS tube MN3 is pressed to generate integrity problem;High voltage power supply is 16V, and high voltage PMOS current mirror is stacked using three-level, to solve high pressure
The possible breakdown problem of PMOS drain-source;The high voltage PMOS current mirror that three-level stacks includes first order current mirror, second level electric current
Mirror and third level current mirror;First order current mirror is made of PMOS tube MP1, MP2, and second level current mirror is by PMOS tube MP3, MP4
It constitutes, third level current mirror is made of PMOS tube MP7, MP8;The grid end of MP1 connect its own drain terminal and and MP2 grid end and
The source of MP3 connects, and the source of MP1 and MP2 meet high voltage power supply Vh, and the drain terminal of MP2 connects the source of MP4, and the grid end of MP3 connects it
Itself drain terminal simultaneously connects with the grid end of MP4 and the source of MP7, and the drain terminal of MP4 connects the source of MP8, and the grid end of MP7 connects its oneself
The drain terminal of body simultaneously connects with the drain terminal of the 104 mesohigh negative threshold value pipe MN5 of grid end and low pressure biasing circuit of MP8, the drain terminal of MP8
Connect with the grid end of the drain terminal of MN6 and MN4.
High pressure domain common-source amplifier 102 further includes compensation resistance Rc and compensating electric capacity Cc;A termination MN6 of compensating electric capacity Cc
Drain terminal, compensating electric capacity Cc another termination compensation resistance Rc one end, compensate resistance Rc another termination MN3 grid end.It mends
Resistance Rc and compensating electric capacity Cc is repaid for compensating AC characteristic so that phase margin is enough, to stablize when making transient working, no
Ringing occurs.
Low pressure biasing circuit 104 includes low pressure NMOS current mirror and high pressure negative threshold value pipe MN5, and such reference current Iref can
Directly to obtain from low voltage reference circuit, while using high pressure negative threshold value pipe MN5 high pressure is isolated, in case low pressure biasing circuit produces
Raw integrity problem.Low pressure NMOS current mirror is made of NMOS tube MN1, MN2, the grid end of MN1 and the drain terminal of its own and MN2
Grid end and reference current Iref are connected, and the source of MN1 and MN2 are grounded, the drain terminal of MN2 and the source of high pressure negative threshold value pipe MN5
End connects, and the grid end of MN5 meets vext.
Power stage 103 includes feedback resistance R1, R2 and high pressure NMOS power tube MN4;One end of feedback resistance R2 is grounded, instead
The other end of feed resistance R2 connects one end of feedback resistance R1 and the positive input terminal of low-pressure region amplifier 101, and feedback resistance R1's is another
The source of one termination MN4, MN4 drain terminal are connected with high voltage power supply Vh, and the source of MN4 is the output end of linear voltage regulator.
The course of work of the present embodiment:
1, feedback resistance R1 and R2 samples output voltage Vout, and feedback voltage Vfb is sent to low-pressure region amplifier 101
Positive input terminal, be compared with reference voltage Vref, generate output voltage vout1;
2, the output voltage vout1 of low-pressure region amplifier 101 is sent to the input terminal of high pressure domain common-source amplifier 102, i.e. MN3's
Grid end, high pressure domain common-source amplifier 102 generate output voltage vout2;
3, the output voltage vout2 of high pressure domain common-source amplifier 102 directly controls the grid of high pressure NMOS power tube MN4,
Generate output voltage Vout.
4, when output voltage Vout increase when, feedback voltage Vfb be greater than reference voltage Vref, low-pressure region amplifier 101 it is defeated
Voltage vout1 is increased out, and MN6 is normal open when due to working normally, the grid and drain electrode opposite in phase of common source amplifier tube MN3,
Thus when the output voltage vout1 of low-pressure region amplifier 101 is increased, the output voltage vout2 meeting of high pressure domain common-source amplifier 102
It reduces, so that the output Vout of power stage 103 is and then reduced;Vice versa, to realize the steady of output voltage Vout
It is fixed.
Claims (6)
1. a kind of linear voltage regulator suitable for hyperbaric environment, it is characterised in that: amplify including low-pressure region amplifier, high pressure domain common source
Device and power stage;
Power stage includes power tube and the first load;The power tube uses high pressure NMOS pipe MN4;First load is using anti-
Feed resistance;The feedback resistance is for sampling the output voltage Vout of the high pressure NMOS pipe MN4, the feedback that will be obtained
Voltage Vfb is sent into the positive input terminal of the low-pressure region amplifier;
The low-pressure region amplifier generates output voltage for the feedback voltage Vfb to be compared with reference voltage Vref
Vout1, and it is sent into high pressure domain common-source amplifier;
High pressure domain common-source amplifier generates output voltage vout2 according to the vout1;The output voltage vout2 is used for
The grid for controlling the high pressure NMOS pipe MN4, generates the output voltage Vout.
2. the linear voltage regulator according to claim 1 suitable for hyperbaric environment, it is characterised in that: high pressure domain common source
Amplifier includes amplifier tube and the second load;The amplifier tube uses high pressure NMOS pipe;Second load is using the multistage height stacked
Press PMOS current mirror.
3. the linear voltage regulator according to claim 1 suitable for hyperbaric environment, it is characterised in that: high pressure domain common source
Amplifier includes amplifier tube, third load and high pressure negative threshold value NMOS tube MN6;The amplifier tube MN3 uses low pressure NMOS tube;The
Three loads are using the multistage high voltage PMOS current mirror stacked;High pressure negative threshold value pipe MN6 is arranged in low pressure NMOS tube MN3 and high pressure
Between PMOS current mirror.
4. the linear voltage regulator according to claim 1 or 2 or 3 suitable for hyperbaric environment, it is characterised in that: further include low
Biasing circuit is pressed, low pressure biasing circuit is used to provide bias current for linear voltage regulator.
5. the linear voltage regulator according to claim 3 suitable for hyperbaric environment, it is characterised in that: the high voltage PMOS electricity
Flowing mirror includes first order current mirror, second level current mirror and third level current mirror;First order current mirror is by PMOS tube MP1, MP2 structure
At second level current mirror is made of PMOS tube MP3, MP4, and third level current mirror is made of PMOS tube MP7, MP8;The grid end of MP1
It connects the drain terminal of its own and connects with the source of the grid end of MP2 and MP3, the source of MP1 and MP2 meet high voltage power supply Vh, MP2
Drain terminal connect the source of MP4, the grid end of MP3 connects the drain terminal of its own and connects with the source of the grid end of MP4 and MP7, MP4's
Drain terminal connects the source of MP8, the grid end of MP7 connect the drain terminal of its own and and MP8 104 mesohigh of grid end and low pressure biasing circuit
The drain terminal of negative threshold value pipe MN5 connects, and the drain terminal of MP8 connects with the grid end of the drain terminal of MN6 and MN4.
6. the linear voltage stabilization method based on the linear voltage regulator described in claim 1 suitable for hyperbaric environment, which is characterized in that
Comprising steps of
1) it is sampled using output voltage Vout of the feedback resistance to high pressure NMOS pipe MN4, obtains feedback voltage Vfb;
2) feedback voltage Vfb is compared with reference voltage Vref using low-pressure region amplifier, if feedback voltage Vfb is greater than reference
Voltage Vref, then the output voltage vout1 of low-pressure region amplifier is increased, thus the output voltage vout2 of high pressure domain common-source amplifier
It reduces;If feedback voltage Vfb is less than reference voltage Vref, the output voltage vout1 of low-pressure region amplifier is reduced, thus high pressure domain
The output voltage vout2 of common-source amplifier is increased;
3) using the grid end of output voltage vout2 control high pressure NMOS pipe MN4, the output voltage Vout is adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614877.4A CN109814648B (en) | 2018-12-27 | 2018-12-27 | Linear voltage stabilizer suitable for high-voltage environment and linear voltage stabilizing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614877.4A CN109814648B (en) | 2018-12-27 | 2018-12-27 | Linear voltage stabilizer suitable for high-voltage environment and linear voltage stabilizing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109814648A true CN109814648A (en) | 2019-05-28 |
| CN109814648B CN109814648B (en) | 2020-12-04 |
Family
ID=66602591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811614877.4A Active CN109814648B (en) | 2018-12-27 | 2018-12-27 | Linear voltage stabilizer suitable for high-voltage environment and linear voltage stabilizing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109814648B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113568466A (en) * | 2021-09-26 | 2021-10-29 | 芯灵通(天津)科技有限公司 | A high-voltage low-dropout linear regulator LDO and its power-on circuit |
| CN114265460A (en) * | 2021-08-30 | 2022-04-01 | 中国兵器工业集团第二一四研究所苏州研发中心 | In-chip integrated low dropout regulator with adjustable frequency compensation |
| CN116126075A (en) * | 2023-03-03 | 2023-05-16 | 重庆大学 | On-chip high-voltage linear voltage stabilizer circuit and voltage stabilizing method thereof |
| CN116400769A (en) * | 2023-04-04 | 2023-07-07 | 深圳市创芯微微电子股份有限公司 | Power consumption control circuit, low dropout linear regulator chip and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110003074A (en) * | 2009-07-03 | 2011-01-11 | 주식회사 하이닉스반도체 | Internal voltage generation circuit of semiconductor device |
| CN103955251A (en) * | 2014-05-06 | 2014-07-30 | 电子科技大学 | High-voltage linear voltage regulator |
| CN105955385A (en) * | 2016-05-05 | 2016-09-21 | 上海铄梵电子科技有限公司 | High pressure resistant linear voltage regulator based on standard CMOS technology |
| US9933801B1 (en) * | 2016-11-22 | 2018-04-03 | Qualcomm Incorporated | Power device area saving by pairing different voltage rated power devices |
| CN108427463A (en) * | 2018-05-30 | 2018-08-21 | 电子科技大学 | A kind of LDO of wide input voltage range high PSRR |
-
2018
- 2018-12-27 CN CN201811614877.4A patent/CN109814648B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110003074A (en) * | 2009-07-03 | 2011-01-11 | 주식회사 하이닉스반도체 | Internal voltage generation circuit of semiconductor device |
| CN103955251A (en) * | 2014-05-06 | 2014-07-30 | 电子科技大学 | High-voltage linear voltage regulator |
| CN105955385A (en) * | 2016-05-05 | 2016-09-21 | 上海铄梵电子科技有限公司 | High pressure resistant linear voltage regulator based on standard CMOS technology |
| US9933801B1 (en) * | 2016-11-22 | 2018-04-03 | Qualcomm Incorporated | Power device area saving by pairing different voltage rated power devices |
| CN108427463A (en) * | 2018-05-30 | 2018-08-21 | 电子科技大学 | A kind of LDO of wide input voltage range high PSRR |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114265460A (en) * | 2021-08-30 | 2022-04-01 | 中国兵器工业集团第二一四研究所苏州研发中心 | In-chip integrated low dropout regulator with adjustable frequency compensation |
| CN114265460B (en) * | 2021-08-30 | 2023-03-10 | 中国兵器工业集团第二一四研究所苏州研发中心 | In-chip integrated frequency compensation adjustable low dropout regulator |
| CN113568466A (en) * | 2021-09-26 | 2021-10-29 | 芯灵通(天津)科技有限公司 | A high-voltage low-dropout linear regulator LDO and its power-on circuit |
| CN116126075A (en) * | 2023-03-03 | 2023-05-16 | 重庆大学 | On-chip high-voltage linear voltage stabilizer circuit and voltage stabilizing method thereof |
| CN116400769A (en) * | 2023-04-04 | 2023-07-07 | 深圳市创芯微微电子股份有限公司 | Power consumption control circuit, low dropout linear regulator chip and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109814648B (en) | 2020-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105005351B (en) | Cascode fully integrated low-dropout linear voltage regulator circuit | |
| CN106774614B (en) | A Low Dropout Linear Regulator Using Super Transconductance Structure | |
| CN108646841B (en) | Linear voltage stabilizing circuit | |
| US7893670B2 (en) | Frequency compensation scheme for stabilizing the LDO using external NPN in HV domain | |
| CN109814648A (en) | A kind of linear voltage regulator and linear voltage stabilization method suitable for hyperbaric environment | |
| CN113359931B (en) | Linear voltage regulator and soft start method | |
| CN109164861A (en) | A kind of low pressure difference linear voltage regulator of fast transient response | |
| CN103838290B (en) | Ldo circuit | |
| CN109782838A (en) | A kind of fast transient response LDO regulator circuit based on phase inverter | |
| CN109116906A (en) | A kind of low pressure difference linear voltage regulator based on adaptive antenna zero compensation | |
| CN106094966B (en) | A kind of linear voltage regulator of wideband high PSRR | |
| US10571942B2 (en) | Overcurrent limiting circuit, overcurrent limiting method, and power supply circuit | |
| CN107797599A (en) | LDO circuit with dynamic compensation and fast transient response | |
| CN102681582A (en) | Linear voltage stabilizing circuit with low voltage difference | |
| CN107024958B (en) | A kind of linear voltage-stabilizing circuit with fast load transient response | |
| CN108427463B (en) | A kind of LDO of wide input voltage range high PSRR | |
| CN113359930B (en) | Linear regulator, soft start method, and electronic device | |
| US20150263618A1 (en) | Voltage supply unit and method for operating the same | |
| CN102411394A (en) | Linear voltage stabilizer with low pressure differential and Sink and Source current capabilities | |
| CN107402594B (en) | Realize the low-power consumption low pressure difference linear voltage regulator of high power supply voltage transformation | |
| CN104950976B (en) | Voltage stabilizing circuit based on slew rate increasing | |
| CN104571249B (en) | A kind of power consumption adaptive line manostat | |
| CN112860002A (en) | Instantaneous response linear voltage regulator | |
| CN208351364U (en) | A kind of linear voltage-stabilizing circuit | |
| US9436196B2 (en) | Voltage regulator and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |