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CN109803950A - 化合物、树脂和组合物、以及抗蚀图案形成方法和电路图案形成方法 - Google Patents

化合物、树脂和组合物、以及抗蚀图案形成方法和电路图案形成方法 Download PDF

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Publication number
CN109803950A
CN109803950A CN201780045311.1A CN201780045311A CN109803950A CN 109803950 A CN109803950 A CN 109803950A CN 201780045311 A CN201780045311 A CN 201780045311A CN 109803950 A CN109803950 A CN 109803950A
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group
formula
compound
acid
integer
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Chinese (zh)
Inventor
越后雅敏
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Mitsubishi Gas Chemical Co Inc
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Mitsubishi Gas Chemical Co Inc
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/08—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/10—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C271/16—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by singly-bound oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/40—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings
    • C07C271/42—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C271/48—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by singly-bound oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/40—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings
    • C07C271/42—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C271/54—Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by carboxyl groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F120/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F120/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F120/10—Esters
    • C08F120/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F120/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F20/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H10P76/204—

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
CN201780045311.1A 2016-07-21 2017-07-21 化合物、树脂和组合物、以及抗蚀图案形成方法和电路图案形成方法 Withdrawn CN109803950A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-143661 2016-07-21
JP2016143661 2016-07-21
PCT/JP2017/026512 WO2018016634A1 (ja) 2016-07-21 2017-07-21 化合物、樹脂及び組成物、並びにレジストパターン形成方法及び回路パターン形成方法

Publications (1)

Publication Number Publication Date
CN109803950A true CN109803950A (zh) 2019-05-24

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Country Status (5)

Country Link
JP (1) JP7194356B2 (ja)
KR (1) KR20190034149A (ja)
CN (1) CN109803950A (ja)
TW (1) TW201817721A (ja)
WO (1) WO2018016634A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112079862A (zh) * 2020-10-29 2020-12-15 江苏创拓新材料有限公司 一种碳酸脂类液晶中间体及其制备方法和应用
CN116640291A (zh) * 2023-05-18 2023-08-25 中国科学院兰州化学物理研究所 一种交联型液晶聚（氨基-脲）酯弹性体材料及其制备方法和应用

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3747857A4 (en) 2018-01-31 2021-03-17 Mitsubishi Gas Chemical Company, Inc. COMPOUND, RESIN, COMPOSITION, METHOD FOR MANUFACTURING RESIST PATTERN, METHOD FOR MANUFACTURING CIRCUIT PATTERN, AND METHOD FOR PURIFYING RESIN
KR20200128008A (ko) * 2018-02-28 2020-11-11 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 조성물 및 그것을 이용한 리소그래피용 막형성재료
JPWO2020027206A1 (ja) * 2018-07-31 2021-08-12 三菱瓦斯化学株式会社 光学部品形成用組成物及び光学部品、並びに、化合物及び樹脂
US11971659B2 (en) * 2018-10-08 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of forming photoresist pattern
KR102734835B1 (ko) 2018-11-06 2024-11-29 삼성디스플레이 주식회사 유기 전계 발광 소자 및 유기 전계 발광 소자용 다환 화합물
US20220144738A1 (en) * 2019-01-31 2022-05-12 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, resist pattern formation method, circuit pattern formation method, and method for purifying resin
KR102776117B1 (ko) * 2019-04-25 2025-03-07 제이에스알 가부시키가이샤 감광성 수지 조성물
KR102374293B1 (ko) * 2021-08-23 2022-03-17 영창케미칼 주식회사 패턴 프로파일 및 해상도 개선용 화학증폭형 포지티브 포토레지스트 조성물

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101088046A (zh) * 2004-12-24 2007-12-12 三菱瓦斯化学株式会社 抗蚀剂用化合物及放射线敏感性组合物
JP2008285648A (ja) * 2006-12-25 2008-11-27 Osaka Gas Co Ltd フルオレン骨格を有するウレタン（メタ）アクリレート
KR20090090866A (ko) * 2008-02-22 2009-08-26 윤중호 고굴절, 고탄성의 프리즘 시트와 이를 위한 조성물 및 그제조 방법
JP2009229720A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp 感光性樹脂組成物、フォトスペーサー及びその形成方法、保護膜、着色パターン、表示装置用基板、並びに表示装置
US20100197876A1 (en) * 2009-02-03 2010-08-05 Samsung Electronics Co., Ltd. Photocurable compound
JP2012047832A (ja) * 2010-08-24 2012-03-08 Hitachi Chem Co Ltd 感光性樹脂組成物、感光性フィルム、リブパターンの形成方法、中空構造の形成方法及び電子部品
CN103733136A (zh) * 2011-08-12 2014-04-16 三菱瓦斯化学株式会社 光刻用下层膜形成材料、光刻用下层膜及图案形成方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223104A1 (de) * 1982-06-21 1983-12-22 Hoechst Ag, 6230 Frankfurt Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial
JP3774668B2 (ja) 2001-02-07 2006-05-17 東京エレクトロン株式会社 シリコン窒化膜形成装置の洗浄前処理方法
JP3914493B2 (ja) 2002-11-27 2007-05-16 東京応化工業株式会社 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法
CN100350574C (zh) 2003-01-24 2007-11-21 东京毅力科创株式会社 在被处理基板上形成硅氮化膜的cvd方法
JP3981030B2 (ja) 2003-03-07 2007-09-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4388429B2 (ja) 2004-02-04 2009-12-24 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
EP1739485B1 (en) 2004-04-15 2016-08-31 Mitsubishi Gas Chemical Company, Inc. Resist composition
JP4781280B2 (ja) 2006-01-25 2011-09-28 信越化学工業株式会社 反射防止膜材料、基板、及びパターン形成方法
JP4638380B2 (ja) 2006-01-27 2011-02-23 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP4858136B2 (ja) 2006-12-06 2012-01-18 三菱瓦斯化学株式会社 感放射線性レジスト組成物
JP5446118B2 (ja) 2007-04-23 2014-03-19 三菱瓦斯化学株式会社 感放射線性組成物
TW200906873A (en) * 2007-05-30 2009-02-16 Toagosei Co Ltd Active energy ray curable composition, coating composition, coating member, and optical material
JP5251523B2 (ja) * 2008-07-08 2013-07-31 日立化成株式会社 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2010138393A (ja) 2008-11-13 2010-06-24 Nippon Kayaku Co Ltd 光学レンズシート用エネルギー線硬化型樹脂組成物及びその硬化物
EP2743769B1 (en) 2011-08-12 2017-03-22 Mitsubishi Gas Chemical Company, Inc. Resist composition, resist pattern formation method, polyphenol compound used therein, and alcohol compound capable of being derived therefrom
WO2013047523A1 (ja) * 2011-09-26 2013-04-04 富士フイルム株式会社 バリア性積層体および新規な重合性化合物
JP2015174877A (ja) 2014-03-13 2015-10-05 日産化学工業株式会社 特定の硬化促進触媒を含む樹脂組成物
US10745372B2 (en) * 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
KR20180034427A (ko) * 2015-07-23 2018-04-04 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 신규 (메트)아크릴로일 화합물 및 그 제조방법
KR20180030847A (ko) * 2015-07-23 2018-03-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 신규 화합물 및 그 제조방법
KR20180048733A (ko) * 2015-08-31 2018-05-10 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 그 제조방법, 패턴형성방법, 수지, 그리고 정제방법
US11137686B2 (en) * 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
WO2017038979A1 (ja) * 2015-09-03 2017-03-09 三菱瓦斯化学株式会社 化合物及びその製造方法、並びに、組成物、光学部品形成用組成物、リソグラフィー用膜形成組成物、レジスト組成物、レジストパターンの形成方法、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法、レジストパターン形成方法、回路パターン形成方法、及び、精製方法
EP3348542A4 (en) * 2015-09-10 2019-04-03 Mitsubishi Gas Chemical Company, Inc. COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS
US11130724B2 (en) * 2015-12-25 2021-09-28 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, resist pattern formation method, and circuit pattern formation method
TW201817699A (zh) * 2016-07-21 2018-05-16 日商三菱瓦斯化學股份有限公司 化合物、樹脂、組成物與阻劑圖型形成方法及電路圖型形成方法
CN109476580A (zh) * 2016-07-21 2019-03-15 三菱瓦斯化学株式会社 化合物、树脂、组合物和图案形成方法
TW201817722A (zh) * 2016-07-21 2018-05-16 日商三菱瓦斯化學股份有限公司 化合物、樹脂、組成物及圖型形成方法
WO2018016640A1 (ja) * 2016-07-21 2018-01-25 三菱瓦斯化学株式会社 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101088046A (zh) * 2004-12-24 2007-12-12 三菱瓦斯化学株式会社 抗蚀剂用化合物及放射线敏感性组合物
JP2008285648A (ja) * 2006-12-25 2008-11-27 Osaka Gas Co Ltd フルオレン骨格を有するウレタン（メタ）アクリレート
KR20090090866A (ko) * 2008-02-22 2009-08-26 윤중호 고굴절, 고탄성의 프리즘 시트와 이를 위한 조성물 및 그제조 방법
JP2009229720A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp 感光性樹脂組成物、フォトスペーサー及びその形成方法、保護膜、着色パターン、表示装置用基板、並びに表示装置
US20100197876A1 (en) * 2009-02-03 2010-08-05 Samsung Electronics Co., Ltd. Photocurable compound
JP2012047832A (ja) * 2010-08-24 2012-03-08 Hitachi Chem Co Ltd 感光性樹脂組成物、感光性フィルム、リブパターンの形成方法、中空構造の形成方法及び電子部品
CN103733136A (zh) * 2011-08-12 2014-04-16 三菱瓦斯化学株式会社 光刻用下层膜形成材料、光刻用下层膜及图案形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112079862A (zh) * 2020-10-29 2020-12-15 江苏创拓新材料有限公司 一种碳酸脂类液晶中间体及其制备方法和应用
CN116640291A (zh) * 2023-05-18 2023-08-25 中国科学院兰州化学物理研究所 一种交联型液晶聚（氨基-脲）酯弹性体材料及其制备方法和应用

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