CN109802015B - Semiconductor device and packaging method thereof - Google Patents
Semiconductor device and packaging method thereof Download PDFInfo
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- CN109802015B CN109802015B CN201811591008.4A CN201811591008A CN109802015B CN 109802015 B CN109802015 B CN 109802015B CN 201811591008 A CN201811591008 A CN 201811591008A CN 109802015 B CN109802015 B CN 109802015B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 9
- 230000032683 aging Effects 0.000 abstract description 6
- 239000000084 colloidal system Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 230000002035 prolonged effect Effects 0.000 description 12
- 230000006872 improvement Effects 0.000 description 9
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The invention discloses a semiconductor device and a packaging method thereof, wherein the semiconductor device comprises: the LED display comprises a substrate, an LED chip, a convex fluorescent piece and a white glue layer; the LED chip is fixed on the substrate and is electrically connected with the substrate; the convex fluorescent sheet is arranged on the LED chip; the white glue layer is provided with a concave part which is matched with the end part of the convex fluorescent sheet in shape, and the white glue layer is arranged on the substrate and is tightly connected with the side wall of the LED chip and the end part of the convex fluorescent sheet. The semiconductor device and the packaging method thereof can effectively increase the bonding area between the fluorescent sheet and the white glue layer, improve the bonding force between the fluorescent sheet and the white glue layer and relieve the white glue cracking phenomenon in the aging process of the semiconductor device.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a semiconductor device and a packaging method thereof.
Background
At present, a semiconductor device for a vehicle is generally packaged by combining a fluorescent sheet and a white glue process, as shown in fig. 1, in the conventional semiconductor device for a vehicle, an LED chip 200 is fixed on a substrate 100, a fluorescent sheet 300 is disposed on the LED chip 200, and a white glue 400 is coated around the LED chip 200 and the fluorescent sheet 300. However, since the power of the LED chip in the semiconductor device for a vehicle is high, the heat emitted by the LED chip is concentrated, so that the existing semiconductor device is prone to the phenomenon of cracking of white glue at the position where the fluorescent sheet is combined with the white glue, and the cracking phenomenon is gradually aggravated along with the increase of the service time of the semiconductor device, so that oxygen and moisture infiltrate into the semiconductor device from the cracking position, the LED chip is promoted to oxidize and blacken, and the service life of the semiconductor device is rapidly shortened.
Disclosure of Invention
In order to solve the problems, the semiconductor device and the packaging method thereof can effectively increase the bonding area between the fluorescent sheet and the white glue layer, improve the bonding force between the fluorescent sheet and the white glue layer and relieve the white glue cracking phenomenon in the aging process of the semiconductor device.
In order to solve the above technical problems, a semiconductor device of the present invention includes: the LED display comprises a substrate, an LED chip, a convex fluorescent piece and a white glue layer; wherein,
the LED chip is fixed on the substrate and is electrically connected with the substrate;
the convex fluorescent sheet is arranged on the LED chip;
the white glue layer is provided with a concave part which is matched with the end part of the convex fluorescent sheet in shape, and the white glue layer is arranged on the substrate and is tightly connected with the side wall of the LED chip and the end part of the convex fluorescent sheet.
Compared with the prior art, the semiconductor device has the advantages that the fluorescent sheet is arranged in the convex shape, and the concave part which is matched with the end part shape of the convex fluorescent sheet is arranged on the inner wall of the white glue layer, so that on one hand, the bonding area between the convex fluorescent sheet and the white glue layer can be effectively increased, the bonding force between the convex fluorescent sheet and the white glue layer is improved, and the phenomenon of white glue cracking in the aging process of the semiconductor device is relieved; on the other hand, the bonding path between the convex fluorescent piece and the white glue layer can be prolonged, so that the path of oxygen and moisture penetrating into the LED chip and the substrate along the side wall of the convex fluorescent piece is prolonged, the penetration of oxygen and moisture is blocked, and the service life of the semiconductor device is prolonged.
As an improvement of the scheme, the end part of the convex fluorescent sheet is provided with at least one groove.
As an improvement of the above-mentioned scheme, a first groove of the at least one groove is provided at a junction of the convex portion and the end portion of the convex fluorescent sheet.
As a modification of the above, a second groove of the at least one groove is provided on the bottom surface of the end portion.
As an improvement of the above, the shape of the at least one groove includes rectangle, semi-arc and cone.
As an improvement of the scheme, the area of the convex part of the convex fluorescent sheet is larger than or equal to the area of the light emitting surface of the LED chip.
As an improvement of the scheme, the top of the white glue layer is flush with the upper surface of the convex fluorescent sheet.
As an improvement of the scheme, the side wall of the convex fluorescent sheet is provided with a microprotrusion structure, and the concave surface of the white glue layer concave part is adapted to the microprotrusion structure.
The invention also provides a packaging method of the semiconductor device, which comprises the following steps:
cutting the fluorescent sheet into convex shapes to form a convex fluorescent sheet;
fixing the LED chip on the substrate by adopting soldering flux or solder paste;
fixing the convex fluorescent sheet on the LED chip;
filling white glue around the LED chip and the convex fluorescent sheet by using a glue dispensing process;
curing to form the semiconductor device.
Compared with the prior art, the packaging method of the semiconductor device has the advantages that the fluorescent sheet is cut into the convex shape to form the convex fluorescent sheet, so that when the white colloid is filled around the LED chip and the convex fluorescent sheet by adopting a dispensing process, on one hand, the bonding area between the convex fluorescent sheet and the white colloid can be effectively increased, the bonding force between the convex fluorescent sheet and the white colloid is improved, and the phenomenon of white colloid cracking in the aging process of the semiconductor device is relieved; on the other hand, the bonding path between the convex fluorescent piece and the white colloid can be prolonged, so that the path of oxygen and moisture penetrating into the LED chip and the substrate along the side wall of the convex fluorescent piece is prolonged, the penetration of oxygen and moisture is blocked, and the service life of the semiconductor device is prolonged.
As an improvement of the above-mentioned scheme, in cutting the fluorescent sheet into a convex shape to constitute a convex fluorescent sheet, further comprising the steps of:
at least one groove is cut in the end of the convex fluorescence sheet.
As an improvement of the above-mentioned scheme, the groove is cut on the junction of the convex portion of the convex fluorescent sheet and the end portion and on the bottom surface of the end portion.
As an improvement of the above-mentioned scheme, after cutting the fluorescent sheet into convex shapes to form convex fluorescent sheets, the method further comprises the following steps: and a microprotrusion structure is arranged on the side wall of the convex fluorescent sheet.
Drawings
Fig. 1 is a schematic structural view of a conventional semiconductor device.
Fig. 2 is a schematic structural view of a semiconductor device of embodiment 1 of the present invention.
Fig. 3 is a schematic structural view of a semiconductor device of embodiment 2 of the present invention.
Fig. 4 is a schematic structural view of another semiconductor device of embodiment 2 of the present invention.
Fig. 5 is a schematic structural view of a semiconductor device of embodiment 3 of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be embodied in many other forms than described herein and similarly practiced by those skilled in the art without departing from the spirit or scope of the invention, which is therefore not limited to the specific embodiments disclosed below.
The technical scheme of the present invention is clearly and completely described below with reference to specific embodiments and drawings.
Example 1
Fig. 2 is a schematic structural diagram of a semiconductor device according to embodiment 1 of the present invention.
The semiconductor device includes: a substrate 1, an LED chip 2, a convex fluorescent sheet 3 and a white glue layer 4; the LED chip 2 is fixed on the substrate 1 and is electrically connected with the substrate 1; the convex fluorescent piece 3 is arranged on the LED chip 2; the white glue layer 4 is provided with a concave part which is matched with the end part shape of the convex fluorescent piece 3, and the white glue layer 4 is arranged on the substrate 1 and is tightly connected with the side wall of the LED chip 2 and the end part of the convex fluorescent piece 3.
Compared with the prior art, the semiconductor device has the advantages that the fluorescent sheet is arranged in the convex shape, and the concave part which is matched with the end shape of the convex fluorescent sheet 3 is arranged on the inner wall of the white glue layer 4, so that on one hand, the bonding area between the convex fluorescent sheet 3 and the white glue layer 4 can be effectively increased, the bonding force between the convex fluorescent sheet 3 and the white glue layer 4 is improved, and the white glue cracking phenomenon in the aging process of the semiconductor device is relieved; on the other hand, the bonding path between the convex fluorescent piece 3 and the white glue layer 4 can be prolonged, so that the path of oxygen and moisture penetrating into the LED chip 2 and the substrate 1 along the side wall of the convex fluorescent piece 3 is prolonged, the penetration of oxygen and moisture is blocked, and the service life of the semiconductor device is prolonged.
Further, the area of the convex portion of the convex fluorescent sheet 3 is larger than or equal to the area of the light emitting surface of the LED chip 2, so that the convex fluorescent sheet 3 can effectively convert the light emitted from the LED chip 2.
Further, the top of the white glue layer 4 is flush with the upper surface of the convex fluorescent sheet 3.
Example 2
Fig. 3 is a schematic structural diagram of a semiconductor device according to embodiment 2 of the present invention.
The semiconductor device was provided with at least one groove at the end 31 of the convex fluorescent sheet 3, which was capable of further increasing the bonding area between the convex fluorescent sheet 3 and the white glue layer 4, and further extending the bonding path between the convex fluorescent sheet 3 and the white glue layer 4, in addition to the entire constituent parts in example 1.
Specifically, as shown in fig. 3 and 4, the shape of the at least one groove includes a rectangle, a semi-arc, and a cone.
Preferably, as shown in fig. 3 and 4, a first groove 311 of the at least one groove is disposed at the connection between the convex portion 32 of the convex fluorescent sheet 3 and the end portion 31, and a second groove 312 of the at least one groove is disposed on the bottom surface of the end portion 31, so as to increase the bonding area and the bonding path between the convex fluorescent sheet 3 and the white glue layer 4 from both sides of the end portion 31 of the convex fluorescent sheet 3 as much as possible.
Preferably, as shown in fig. 3 and 4, the second recess 312 is downward open and the bottom end of the first protrusion 313 is higher than the bottom end of the second protrusion 314 of the second recess 312, so that the white glue layer 4 can be more easily clamped in the second recess 312; the first protrusion 313 is a protrusion of the second groove 312 away from the LED chip 2, and the second protrusion 314 is a protrusion of the second groove 312 close to the LED chip 2.
Example 3
Fig. 5 is a schematic structural diagram of a semiconductor device according to embodiment 3 of the present invention.
Except that the semiconductor device comprises all the components in embodiment 1, the difference is that in the semiconductor device, the side wall of the convex fluorescent sheet 3 is provided with a micro-convex structure 33, the concave surface of the concave part of the white glue layer 4 is adapted to the micro-convex structure 33, so as to enhance the bonding force between the side wall of the convex fluorescent sheet 3 and the white glue layer 4, and a certain release space is formed between the convex fluorescent sheet 3 and the white glue layer 4 under the condition of cold and hot impact; meanwhile, the microprotrusion structure 33 can further prolong the path of moisture and oxygen entering the LED chip 2 and the substrate 1 from the side walls of the convex fluorescent sheet 3 and the white glue layer 4, and plays a role in moisture and oxygen resistance.
Preferably, the raised portions of the microprotrusion structure 33 include serrations, arcs or rectangles.
It can be understood that the embodiment is described in which the side wall of the convex fluorescent sheet of embodiment 1 is provided with the micro-convex structure, and the case that the convex fluorescent sheet of embodiment 2 is provided with the micro-convex structure can be deduced according to embodiment 3, so that the description thereof is omitted here.
Example 4
The invention also provides a packaging method of the semiconductor device, which comprises the following steps:
s1, cutting a fluorescent sheet into a convex shape to form a convex fluorescent sheet;
wherein, in step S1, the method further comprises the steps of:
s11, cutting at least one groove at the end part of the convex fluorescent sheet so as to further increase the bonding area and bonding path between the convex fluorescent sheet and the white glue;
s2, fixing the LED chip on the substrate by adopting soldering flux or solder paste;
s3, fixing the convex fluorescent sheet on the LED chip;
in step S3, the convex fluorescent sheet is connected with the upper surface of the LED chip through die bond glue or silica gel to achieve fixed arrangement.
S4, filling white glue around the LED chip and the convex fluorescent sheet by using a glue dispensing process;
s5, curing to form the semiconductor device.
Compared with the prior art, the packaging method of the semiconductor device has the advantages that the fluorescent sheet is cut into the convex shape to form the convex fluorescent sheet, so that when the white colloid is filled around the LED chip and the convex fluorescent sheet by adopting a dispensing process, on one hand, the bonding area between the convex fluorescent sheet and the white colloid can be effectively increased, the bonding force between the convex fluorescent sheet and the white colloid is improved, and the phenomenon of white colloid cracking in the aging process of the semiconductor device is relieved; on the other hand, the bonding path between the convex fluorescent piece and the white colloid can be prolonged, so that the path of oxygen and moisture penetrating into the LED chip and the substrate along the side wall of the convex fluorescent piece is prolonged, the penetration of oxygen and moisture is blocked, and the service life of the semiconductor device is prolonged.
Preferably, in step S11, a first groove of the at least one groove is cut at a connection position between the convex portion and the end portion of the convex fluorescent sheet, so that a space is reserved for the white colloid in advance, and uneven connection positions of the white colloid due to self surface tension in a subsequent dispensing process can be effectively avoided, so that the combination is unstable; furthermore, because space is reserved for the white colloid in advance, the white colloid can be connected with the convex fluorescent sheet more easily according to the flow performance of the white colloid, the bonding surface between the manufactured white colloid layer and the convex fluorescent sheet is smoother and stronger in bonding force, and the top of the white colloid layer is flush with the top of the convex part of the convex fluorescent sheet, so that the manufactured semiconductor device is more attractive.
Preferably, in step S11, a second groove of the at least one groove is cut on the bottom surface of the end portion of the convex fluorescent sheet, so as to further increase the bonding area and bonding path between the convex fluorescent sheet and the white glue; and the second grooves are positioned on two sides of the LED chip, so that the conversion of the convex fluorescent piece to the light emitted by the LED chip is avoided.
Preferably, the second groove is downward opened, and the bottom end of the first convex part is higher than the bottom end of the second groove, so that the white colloid is easier to fill in the second groove; the first protruding portion is a protruding portion of the second groove, which is far away from the LED chip, and the second protruding portion is a protruding portion of the second groove, which is close to the LED chip.
Preferably, after step S1, the method further comprises the steps of: the side wall of the convex fluorescent sheet is provided with a microprotrusion structure so as to enhance the bonding force between the side wall of the convex fluorescent sheet and the white glue, and a certain release space is formed between the convex fluorescent sheet and the formed white glue layer under cold and hot impact; meanwhile, the microprotrusion structure can further prolong the path of moisture and oxygen entering the LED chip and the substrate from the side walls of the convex fluorescent sheet and the white glue layer, and plays a role in moisture and oxygen resistance.
Preferably, the raised portions of the microprotrusion structure are arcuate, rectangular or triangular.
Preferably, the substrate in the above embodiment is a ceramic substrate.
The present invention is not limited to the preferred embodiments, and any simple modification, equivalent variation and modification made to the above embodiments according to the technical substance of the present invention will still fall within the scope of the technical solution of the present invention.
Claims (6)
1. A semiconductor device, comprising: the LED display comprises a substrate, an LED chip, a convex fluorescent piece and a white glue layer; wherein,
the LED chip is fixed on the substrate and is electrically connected with the substrate;
the convex fluorescent sheet is arranged on the LED chip;
the white glue layer is provided with a concave part which is matched with the end part shape of the convex fluorescent sheet, and the white glue layer is arranged on the substrate and is tightly connected with the side wall of the LED chip and the end part of the convex fluorescent sheet;
at least one groove is formed in the end portion of the convex fluorescent piece; a first groove of the at least one groove is arranged at the joint of the convex part of the convex fluorescent sheet and the end part; a second groove of the at least one groove is arranged on the bottom surface of the end part; the second groove is downward in opening, and the bottom end of the first protruding portion of the second groove is higher than the bottom end of the second protruding portion of the second groove, wherein the first protruding portion is a protruding portion of the second groove away from the LED chip, and the second protruding portion is a protruding portion of the second groove close to the LED chip.
2. The semiconductor device of claim 1, wherein the shape of the at least one recess comprises rectangular, semi-arcuate, and tapered.
3. The semiconductor device according to claim 1, wherein an area of the convex fluorescent sheet convex portion is larger than or equal to an area of a light-emitting surface of the LED chip.
4. The semiconductor device according to any one of claims 1 to 3, wherein a micro-protrusion structure is provided on a side wall of the convex fluorescent sheet, and a recessed surface of the white glue layer recessed portion is adapted to the micro-protrusion structure.
5. A packaging method of a semiconductor device, for manufacturing the semiconductor device according to any one of claims 1 to 3, comprising the steps of:
cutting the fluorescent sheet into convex shapes to form a convex fluorescent sheet;
fixing the LED chip on the substrate by adopting soldering flux or solder paste;
fixing the convex fluorescent sheet on the LED chip;
filling white glue around the LED chip and the convex fluorescent sheet by using a glue dispensing process;
curing to form the semiconductor device.
6. The packaging method of claim 5, further comprising the steps of, after cutting the fluorescent sheet into a convex shape to form a convex fluorescent sheet:
and a microprotrusion structure is arranged on the side wall of the convex fluorescent sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811591008.4A CN109802015B (en) | 2018-12-25 | 2018-12-25 | Semiconductor device and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811591008.4A CN109802015B (en) | 2018-12-25 | 2018-12-25 | Semiconductor device and packaging method thereof |
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| Publication Number | Publication Date |
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| CN109802015A CN109802015A (en) | 2019-05-24 |
| CN109802015B true CN109802015B (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811591008.4A Active CN109802015B (en) | 2018-12-25 | 2018-12-25 | Semiconductor device and packaging method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114660877A (en) * | 2022-02-28 | 2022-06-24 | 歌尔股份有限公司 | Light-emitting modules and optomechanics |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307605Y (en) * | 2008-12-05 | 2009-09-09 | 弘凯光电(深圳)有限公司 | LED packaging structure |
| CN101867003A (en) * | 2009-04-20 | 2010-10-20 | 日亚化学工业株式会社 | light emitting device |
| CN103489994A (en) * | 2013-10-15 | 2014-01-01 | 晶科电子（广州）有限公司 | High-adhesion and high-reliability white LED (light-emitting diode) chip |
| JP2015198130A (en) * | 2014-03-31 | 2015-11-09 | シチズンホールディングス株式会社 | LED light emitting device and manufacturing method thereof |
| CN209389057U (en) * | 2018-12-25 | 2019-09-13 | 广东晶科电子股份有限公司 | A kind of semiconductor devices |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR112015026316B1 (en) * | 2013-04-17 | 2022-01-11 | Koito Manufacturing Co., Ltd. | LIGHT EMITTING DEVICE |
| TWI562405B (en) * | 2013-09-23 | 2016-12-11 | Brightek Optoelectronic Shenzhen Co Ltd | Method of manufacturing led package structure for preventing lateral light leakage |
| US20160190406A1 (en) * | 2014-12-24 | 2016-06-30 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
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- 2018-12-25 CN CN201811591008.4A patent/CN109802015B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307605Y (en) * | 2008-12-05 | 2009-09-09 | 弘凯光电(深圳)有限公司 | LED packaging structure |
| CN101867003A (en) * | 2009-04-20 | 2010-10-20 | 日亚化学工业株式会社 | light emitting device |
| CN103489994A (en) * | 2013-10-15 | 2014-01-01 | 晶科电子（广州）有限公司 | High-adhesion and high-reliability white LED (light-emitting diode) chip |
| JP2015198130A (en) * | 2014-03-31 | 2015-11-09 | シチズンホールディングス株式会社 | LED light emitting device and manufacturing method thereof |
| CN209389057U (en) * | 2018-12-25 | 2019-09-13 | 广东晶科电子股份有限公司 | A kind of semiconductor devices |
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| CN109802015A (en) | 2019-05-24 |
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