CN109808086A - Active deformation for soft crisp ultrathin crystal ultra precision cutting compensates clamping device - Google Patents
Active deformation for soft crisp ultrathin crystal ultra precision cutting compensates clamping device Download PDFInfo
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- CN109808086A CN109808086A CN201910085763.3A CN201910085763A CN109808086A CN 109808086 A CN109808086 A CN 109808086A CN 201910085763 A CN201910085763 A CN 201910085763A CN 109808086 A CN109808086 A CN 109808086A
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Abstract
本发明涉及一种用于软脆超薄晶体超精密切削的主动变形补偿装夹装置，属于闪烁晶体超精密加工领域。该装置能够主动补偿传统真空吸盘吸附软脆超薄碘化铯晶体时难以避免的吸附变形，以实现吸附变形误差的确定性主动补偿，为加工中降低晶体的厚度，并保持晶体各点厚度一致性提供技术支持。本发明首先基于静态变形原理，通过分析紧支撑条件下双层矩形压电薄板影响函数的解析表达式，建立反映加载电压与变形量之间关系的影响函数，而后在干涉仪等高精度面形检测装置辅助下实现对真空吸附变形的离线检测，最后通过改变各压电陶瓷电极的激发电压主动改变玻璃薄板层的形状，对真空吸附变形进行主动变形补偿，改善超薄碘化铯晶体的超精密切削加工精度。
The invention relates to an active deformation compensation clamping device used for ultra-precision cutting of soft and brittle ultra-thin crystals, and belongs to the field of ultra-precision machining of scintillation crystals. The device can actively compensate for the unavoidable adsorption deformation when the traditional vacuum sucker adsorbs soft and brittle ultra-thin cesium iodide crystals, so as to realize the deterministic active compensation of adsorption deformation errors, reduce the thickness of the crystal during processing, and keep the thickness of each point of the crystal consistent. Provide technical support. Based on the principle of static deformation, the invention firstly establishes the influence function reflecting the relationship between the loading voltage and the deformation amount by analyzing the analytical expression of the influence function of the double-layer rectangular piezoelectric thin plate under the condition of tight support. The off-line detection of vacuum adsorption deformation is realized with the aid of the detection device. Finally, by changing the excitation voltage of each piezoelectric ceramic electrode, the shape of the glass thin plate layer is actively changed, and the vacuum adsorption deformation is actively compensated to improve the ultra-thin cesium iodide crystal. Precision cutting accuracy.
Description
Technical field
The present invention relates to a kind of active deformations for soft crisp ultrathin crystal ultra precision cutting to compensate clamping device, belongs to sudden strain of a muscle
Bright crystals for ultra-precision manufacture field.
Background technique
Cesium iodide crystal CsI belongs to the typical inorganic scintillation crystal in domain.Inorganic scintillation crystal is penetrated in absorption X-ray, γ-
Ultraviolet light or visible light can be issued after the energy of line or other high energy particles, wherein, transmitting more prominent with CsI crystal property
Spectrum can be matched with silicon photo diode, and photoyield is high, and irradiation length is short compared with NaI (Tl) crystal, good mechanical property, CsI crystal light
Yield is high, and production cost is relatively low, becomes a kind of excellent practical scintillator crystal materials, is particularly suitable for middle particles at low energies
Detection, be widely used in terms of X-ray detection.
In the Ultra-precision machining of cesium iodide crystal CsI, the mode for generalling use vacuum suction fills crystal
Folder and positioning.The cesium iodide crystal CsI as used in X-ray detection aspect is soft crisp ultra-thin sheet-type element, typical ruler
It is very little are as follows: 10mm × 10mm × 70 μm and 25.4mm × 100 μm φ, and cesium iodide crystal elasticity modulus itself is small, vacuum suction
The effect of pressure can make crystal generate significant deformation, so that it is (general to require better than 1~3 μ to influence the consistency of thickness after processing
m).Correlative study show vacuum suction deformation be cause cesium iodide crystal body process after consistency of thickness be difficult to control it is most heavy
Want one of reason.
Ultra precision cutting technique realizes the control of consistency of thickness by the iteration processing to cesium iodide crystal tow sides,
The deformation quantity that entire technical process introduces the plane precision of vacuum chuck datum level, vacuum suction requires very harsh.
Summary of the invention
The purpose of the present invention is to solve produce when the vacuum suction in cesium iodide crystal CsI Ultra-precision machining is fixed
Change shape, the problem for causing each dot thickness of the product processed inconsistent, provides a kind of close for soft crisp ultrathin crystal superfinishing
The active deformation compensation clamping device cut.The device being capable of the soft crisp ultra-thin cesium iodide crystal of Active Compensation traditional vacuum sucker suction
When be difficult to avoid that absorption deformation, with realize absorption distortion inaccuracy certainty Active Compensation, for processing in quickly reduce crystal
Consistency of thickness error provide technical support.
The purpose of the present invention is what is be achieved through the following technical solutions.
Active deformation for soft crisp ultrathin crystal ultra precision cutting compensates clamping device, which is fixedly mounted on single-point
Above vacuum chuck in diamond superfinishing lathe；
The clamping device, including sheets of glass, built-in electrode, piezoelectric ceramics, backwards electrode, flexible support column, deformation
Unit installation frame and regulating circuit；
The deformation unit installation frame be two style structure, two style structure assembling after constitute concave character type structure, i.e., in
Between with fluted；Flexible support column is separately installed on two style structure；Built-in electrode and backwards to electrode be located at piezoelectricity pottery
Then porcelain two sides are fixed on the sheets of glass bottom surface jointly, form clamped component；Clamped component passes through flexible support column
It is fixed in deformation unit installation frame；Several vacuum sucking holes are offered on the clamped component；Regulating circuit is for adjusting
Built-in electrode and backwards electrode；
The flexible support column and clamped component contact part are rubber o-ring；
The course of work: being placed on sheets of glass upper surface for uniform thickness crystal to be processed, when vacuum suction, deforms,
The deflection due to caused by vacuum suction is detected by interferometer；And by regulating circuit control built-in electrode and backwards to electrode it
Between voltage deform piezoelectric ceramics, with realize active deformation compensate.
Beneficial effect
(1) present invention is primarily based on static deformation principle, passes through the double-deck Rectangular piezoelectric thin plate shadow under the conditions of analysis compact schemes
The analytical expression of function is rung, the influence function of relationship between reflection on-load voltage and deflection is established, then in interferometer etc.
High-precision surface shape detection device auxiliary realizes the offline inspection deformed to vacuum suction down, electric finally by each piezoelectric ceramics is changed
The excitation voltage of pole actively changes the shape of sheets of glass layer, deforms to vacuum suction and carries out active deformation compensation, improves ultra-thin
The Ultra-precision machining precision of cesium iodide crystal.
(2) offline inspection deformed to vacuum suction is realized under the high-precisions surface shape detection apparatus such as interferometer auxiliary, it can
With the size and distribution of precise measurement absorption deformation, lay the foundation for quantitative compensation.
(3) shape for actively changing sheets of glass layer by changing the excitation voltage of each piezoelectric ceramics electrode, inhales vacuum
Attached deformation carries out active deformation compensation, improves the Ultra-precision machining precision of ultra-thin cesium iodide crystal.
(4) present invention could apply to the soft crisp ultra-thin scintillation crystal elements such as cesium iodide crystal, cesium iodide,crystal crystal
Ultra-precision machining.The active deformation compensation clamping device structure that the present invention is researched and developed is simple, and high reliablity, vacuum suction becomes
Shape is small, and Active Compensation process realizes automation substantially, easily controllable.
Detailed description of the invention
Fig. 1 deformation unit structure chart；
Fig. 2 back electrode distribution map；
Fig. 3 interferometer detection figure；
The active deformation compensation clamping device of Fig. 4 embodiment 1 corrects vacuum suction deformation effect figure；Wherein, a is actively to become
Shape compensates initial vacuum and adsorbs deformation effect figure；B is vacuum suction deformation effect figure after active deformation compensation；
The active deformation compensation clamping device of Fig. 5 embodiment 2 corrects vacuum suction deformation effect figure；Wherein, a is actively to become
Shape compensates initial vacuum and adsorbs deformation effect figure；B is vacuum suction deformation effect figure after active deformation compensation.
Wherein, 1-sheets of glass, 2-built-in electrodes, 3-piezoelectric ceramics, 4-backwards to electrode, 5-flexible support columns,
6-deformation unit installation frames, 7-regulating circuits.
Specific embodiment
The invention will be further described with embodiment with reference to the accompanying drawing.
Embodiment 1
Active deformation for soft crisp ultrathin crystal ultra precision cutting compensates clamping device, which is fixedly mounted on single-point
Above vacuum chuck in diamond superfinishing lathe；
The clamping device, including sheets of glass 1, built-in electrode 2, piezoelectric ceramics 3, backwards to electrode 4, flexible support column 5,
Deformation unit installation frame 6 and regulating circuit 7；
The deformation unit installation frame 6 be two style structure, two style structure assembling after constitute concave character type structure, i.e., in
Between with fluted；Flexible support column 5 is separately installed on two style structure；Built-in electrode 2 and piezoelectricity is located at backwards to electrode 4
Ceramic 3 two sides, are then fixed on 1 bottom surface of sheets of glass jointly, form clamped component；Clamped component passes through flexible branch
Dagger 5 is fixed in deformation unit installation frame 6；Several vacuum sucking holes are offered on the clamped component；Regulating circuit 7 is used
In adjusting built-in electrode 2 and backwards to electrode 4.
The flexible support column 5 is rubber o-ring with clamped component contact part.
The compensation process of described device are as follows: uniform thickness crystal to be processed is placed on 1 upper surface of sheets of glass, vacuum suction
When, it deforms, the deflection due to caused by vacuum suction is detected by interferometer；And in-built electrical is controlled by regulating circuit 7
Pole 2 and the voltage between electrode 4 deform piezoelectric ceramics 3；To realize that active deformation compensates.
Such as Fig. 1, the sheets of glass 1 is connect with built-in electrode 2 by glue-line, and the built-in electrode 2 passes through electrification
It learns sedimentation to connect with piezoelectric ceramics 3, described is connect by electrochemical deposition method with piezoelectric ceramics 3 backwards to electrode 4.Glass thin
Plate 1 to flexible support column 5 collectively forms deformation unit.Detailed back electrode distribution is as shown in Figure 2.The deformation unit peace
The frame 6 that frames up passes through with flexible support column 5 to be mechanically connected, and deformation unit installation frame 6 is mounted on vacuum chuck top by screw,
Vacuum generator is mounted on the lower part for adjusting vacuum chuck, collectively forms vacuum suction unit.And it is controlled by regulating circuit 7 built-in
Electrode 2 and the voltage between electrode 4, control piezoelectric ceramics 3 deform, and realize active deformation compensation.
Embodiment is described with reference to Fig. 4, and cesium iodide crystal is having a size of 10mm × 10mm × 70 μm, active deformation compensation dress
Clamp device includes sheets of glass 50mm diameter, 200 μm of built-in electrode chemical deposition, piezoelectric ceramics PZT-5A, backwards electrode, flexibility
Support column, deformation unit installation frame, vacuum chuck, vacuum generator.
Uniform thickness crystal to be processed is placed on 1 upper surface of sheets of glass, when vacuum suction, deforms, passes through interference
Instrument detects the deflection due to caused by vacuum suction, as shown in Figure 3；And built-in electrode 2 and backwards electricity are controlled by regulating circuit 7
Voltage between pole 4, control piezoelectric ceramics 3 deform；To realize that active deformation compensates.
Such as Fig. 4 a, vacuum suction is deformed into 2.378 wavelength of PV when non-Active Compensation, and 1 wavelength is 0.6328 μm, similarly hereinafter, such as
Fig. 4 b, the vacuum suction after Active Compensation are deformed into 0.695 wavelength of PV, meet Ultra-precision machining demand.
Embodiment 2:
Embodiment is described with reference to Fig.5, cesium iodide crystal is having a size of 25.4mm × 100 μm φ, active deformation compensation dress
Clamp device includes sheets of glass 50mm diameter, 200 μm of built-in electrode chemical deposition, piezoelectric ceramics PZT-5A, backwards electrode, flexibility
Support column, deformation unit installation frame, vacuum chuck, vacuum generator.
Such as Fig. 5 a, vacuum suction is deformed into 3.711 wavelength of PV when non-Active Compensation, the vacuum such as Fig. 5 b, after Active Compensation
Absorption is deformed into 0.931 wavelength of PV, meets Ultra-precision machining demand.
Active deformation for soft crisp ultrathin crystal ultra precision cutting of the invention compensates clamping device, is widely portable to
The Ultra-precision machining of scintillation crystal.
Above-described specific descriptions have carried out further specifically the purpose of invention, technical scheme and beneficial effects
It is bright, it should be understood that the above is only a specific embodiment of the present invention, the protection model being not intended to limit the present invention
It encloses, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention
Protection scope within.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910085763.3A CN109808086B (en) | 2019-01-29 | 2019-01-29 | Active deformation compensation clamping device for ultra-precision cutting of soft and brittle ultra-thin crystals |
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| CN201910085763.3A CN109808086B (en) | 2019-01-29 | 2019-01-29 | Active deformation compensation clamping device for ultra-precision cutting of soft and brittle ultra-thin crystals |
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| CN109808086B CN109808086B (en) | 2020-05-19 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116944928A (en) * | 2023-07-31 | 2023-10-27 | 大连理工大学 | A multi-level adaptive adjustment follow-up auxiliary clamping method |
| CN117621078A (en) * | 2023-12-19 | 2024-03-01 | 宁夏大学 | A robot control method, device, system, electronic equipment, and storage medium |
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| JPS5969926A (en) * | 1982-10-15 | 1984-04-20 | Hitachi Ltd | Exposure method and device |
| US4504045A (en) * | 1981-10-19 | 1985-03-12 | Hitachi, Ltd. | Wafer transforming device |
| US5094536A (en) * | 1990-11-05 | 1992-03-10 | Litel Instruments | Deformable wafer chuck |
| CN102390045A (en) * | 2011-07-01 | 2012-03-28 | 南京航空航天大学 | Grinding tool capable of actively compensating surface shape abrasion errors and compensating method thereof |
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2019
- 2019-01-29 CN CN201910085763.3A patent/CN109808086B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4504045A (en) * | 1981-10-19 | 1985-03-12 | Hitachi, Ltd. | Wafer transforming device |
| JPS5969926A (en) * | 1982-10-15 | 1984-04-20 | Hitachi Ltd | Exposure method and device |
| US5094536A (en) * | 1990-11-05 | 1992-03-10 | Litel Instruments | Deformable wafer chuck |
| CN102390045A (en) * | 2011-07-01 | 2012-03-28 | 南京航空航天大学 | Grinding tool capable of actively compensating surface shape abrasion errors and compensating method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116944928A (en) * | 2023-07-31 | 2023-10-27 | 大连理工大学 | A multi-level adaptive adjustment follow-up auxiliary clamping method |
| CN117621078A (en) * | 2023-12-19 | 2024-03-01 | 宁夏大学 | A robot control method, device, system, electronic equipment, and storage medium |
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| Publication number | Publication date |
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| CN109808086B (en) | 2020-05-19 |
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